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New a-Si Alloy Thin Film Anode with Self Organized Micro Columnar Structure Shin Fujitani, Hiromasa Yagi, Katsunobu Sayama, Toshikazu Yoshida and Hisaki Tarui Energy R&D Center, Soft Energy Company, Sanyo Electric Co., Ltd. 7-3-2 Ibukidai-higashimachi, Nishi-ku, Kobe, Hyogo 651-2242, Japan INTRODUCTON Li alloys like Li-Sn, Li-Si and so on have gathered many attentions because of their large specific capacity for an anode of lithium secondary batteries. However, large volume expansion from discharged state to charged state so heavily pulverizes the alloy particles in electrode as to degrade electronic conductivity and cycle performance. We have shown that a amorphous Si (a-Si) anode formed on moderately roughened surface copper foil by a sputtering process can solve the above problem and achieve virtually 100% reversibility over a large capacity larger than 3000mAh/g. In this work, the a-Si thin film anodes are discussed in terms of the stress relaxation mechanism through micro columnar structure self-organized by the first charge and discharge, and its phase structural change. Also, performances of experimental Li-ion cells are described. EXPERIMENTAL a-Si thin film electrodes were prepared by depositing Si on the electro-plated Cu foil with moderate surface roughness in micrometer scale irregularities. Argon RF sputtering process was employed for the deposition. The electrochemical performance was examined by using a tri-polar test cell with 1mol/L of LiPF 6 in EC/DEC=3:7 electrolyte. Experimental cells of 300-400mAh class were fabricated for combinations of a commercially available LiCoO 2 cathode with the a-Si thin film anode and a commercially available carbon anode, where the same capacity in unit square was given to the both anode The cells were charged at a constant current (1C) up to 4.2V followed by a constant voltage at 4.2V down to 20mAh and then, were discharged to 2.75V at a constant current (1C). RESULTS AND DISCUSSION The a-Si electrode (5μm) exhibited an initial discharge capacity of 3590mAh/g in the tri-pole test cell. The initial charge-discharge efficiency was 96%. The Si films as deposited was observed to uniformly cover the surface of the cupper along with the irregularities and after first charge, grow to 17μm thickness at the fully charged state as shown in figure. 1. After the first charge and discharge, the Si thin film was divided into micro columns. However, each column remained adhering on the copper foil. This is partly because the adhesion of the Si was enhanced by enlarged contact area of the roughened copper foil surface and partly because an intermixed layer of active mass and the underlying copper was formed during the sputtering process. The self-organized micro columnar structure was formed by microscopic anisotropy of the deposited a-Si density along with the irregularities. The a-Si active mass remain substantially in amorphous state in a whole range. Thus, SiLix solid solution with an amorphous structure is considered to be the only phase in the reaction system. Figure 2 shows thickness change of the experimental cells. The total change of the cell thickness was almost the same, which indicate that volume increase of carbon and Si per unit Li occlusion be the same. The volumetric energy density of the cell using the Si anode was about 1.3 times as large as that using graphite. Cycle performance of these cells is shown in Fig. 3. After 50 cycles, the retained capacity using the Si anode was 92%. Further investigation on extended cycle performance is to be discussed. REFERENCES 1) H. Ikeda, M Fujimoto, S. Fujitani, Y. Domoto, H. Yagi, H. Tarui, N. Tamura, R. Ohshita, M. Kamino and I. Yonezu, The 42nd Battery Symposium in Japan, Yokohama Japan, 282 (2001). 2) T. Yoshida, T. Fujihara, H. Fujimoto, R. Ohshita, M. Kamino, and S. Fujitani, The 11th IMLB, Monterey, CA USA, Abstract No.48 (2002). (a)Discharged -state 10μm (b)Charged -state 10μm Fig. 1. Cross-sectional SEM images of a-Si thin film electrode for (a) discharged and (b) charged state. Fig. 2. The thickness change of batteries with the thin- film Si and conventional graphite anode. Fig. 3. Cycle characteristics of the cell using a LiCoO 2 cathode and the Si thin film anode. 0 100 200 300 400 500 0 10 20 30 40 50 Charge current: Carbon 300 mA, Silicon 400 mA Discharge current: Carbon 300 mA, Silicon 400 mA Cycle number Discharge capacity (mAh) Silicon Carbon Temperature : RT Charge current: Carbon 300 mA, Silicon 400 mA Discharge current: Carbon 300 mA, Silicon 400 mA Cycle number Discharge capacity (mAh) Silicon Carbon Temperature : RT 0 1 2 3 4 5 Before charge 1st charge 1st discharge 10th charge 10th discharge 20th charge 20th discharge 30th charge 30th discharge 50th charge 50th discharge Thickness (mm) Carbon Silicon Temperature: RT 0 1 2 3 4 5 Before charge 1st charge 1st discharge 10th charge 10th discharge 20th charge 20th discharge 30th charge 30th discharge 50th charge 50th discharge Thickness (mm) Carbon Silicon Temperature: RT

New a-Si Alloy Thin Film Anode with Self Organized Micro … · 2016-04-27 · New a-Si Alloy Thin Film Anode with Self Organized Micro Columnar Structure Shin Fujitani, Hiromasa

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Page 1: New a-Si Alloy Thin Film Anode with Self Organized Micro … · 2016-04-27 · New a-Si Alloy Thin Film Anode with Self Organized Micro Columnar Structure Shin Fujitani, Hiromasa

New a-Si Alloy Thin Film Anode with Self Organized Micro Columnar Structure

Shin Fujitani, Hiromasa Yagi, Katsunobu Sayama, Toshikazu Yoshida and Hisaki Tarui

Energy R&D Center, Soft Energy Company, Sanyo Electric Co., Ltd.

7-3-2 Ibukidai-higashimachi, Nishi-ku, Kobe, Hyogo 651-2242, Japan

INTRODUCTON

Li alloys like Li-Sn, Li-Si and so on have gathered many attentions because of their large specific capacity for an anode of lithium secondary batteries. However, large volume expansion from discharged state to charged state so heavily pulverizes the alloy particles in electrode as to degrade electronic conductivity and cycle performance.

We have shown that a amorphous Si (a-Si) anode formed on moderately roughened surface copper foil by a sputtering process can solve the above problem and achieve virtually 100% reversibility over a large capacity larger than 3000mAh/g.

In this work, the a-Si thin film anodes are discussed in terms of the stress relaxation mechanism through micro columnar structure self-organized by the first charge and discharge, and its phase structural change. Also, performances of experimental Li-ion cells are described. EXPERIMENTAL

a-Si thin film electrodes were prepared by depositing Si on the electro-plated Cu foil with moderate surface roughness in micrometer scale irregularities. Argon RF sputtering process was employed for the deposition. The electrochemical performance was examined by using a tri-polar test cell with 1mol/L of LiPF6 in EC/DEC=3:7 electrolyte. Experimental cells of 300-400mAh class were fabricated for combinations of a commercially available LiCoO2 cathode with the a-Si thin film anode and a commercially available carbon anode, where the same capacity in unit square was given to the both anode

The cells were charged at a constant current (1C) up to 4.2V followed by a constant voltage at 4.2V down to 20mAh and then, were discharged to 2.75V at a constant current (1C). RESULTS AND DISCUSSION

The a-Si electrode (5µm) exhibited an initial discharge capacity of 3590mAh/g in the tri-pole test cell. The initial charge-discharge efficiency was 96%. The Si films as deposited was observed to uniformly cover the surface of the cupper along with the irregularities and after first charge, grow to 17µm thickness at the fully charged state as shown in figure. 1. After the first charge and discharge, the Si thin film was divided into micro columns. However, each column remained adhering on the copper foil.

This is partly because the adhesion of the Si was enhanced by enlarged contact area of the roughened copper foil surface and partly because an intermixed layer of active mass and the underlying copper was formed during the sputtering process. The self-organized micro columnar structure was formed by microscopic anisotropy of the deposited a-Si density along with the irregularities.

The a-Si active mass remain substantially in amorphous state in a whole range. Thus, SiLix solid solution with an amorphous structure is considered to be the only phase in the reaction system.

Figure 2 shows thickness change of the

experimental cells. The total change of the cell thickness was almost the same, which indicate that volume increase of carbon and Si per unit Li occlusion be the same. The volumetric energy density of the cell using the Si anode was about 1.3 times as large as that using graphite. Cycle performance of these cells is shown in Fig. 3. After 50 cycles, the retained capacity using the Si anode was 92%. Further investigation on extended cycle performance is to be discussed. REFERENCES 1) H. Ikeda, M Fujimoto, S. Fujitani, Y. Domoto, H. Yagi,

H. Tarui, N. Tamura, R. Ohshita, M. Kamino and I. Yonezu, The 42nd Battery Symposium in Japan, Yokohama Japan, 282 (2001).

2) T. Yoshida, T. Fujihara, H. Fujimoto, R. Ohshita, M. Kamino, and S. Fujitani, The 11th IMLB, Monterey, CA USA, Abstract No.48 (2002).

(a)Discharged -state

10µm

(b)Charged -state

10µm

Fig. 1. Cross-sectional SEM images of a-Si thin film electrode for (a) discharged and (b) charged state.

Fig. 2. The thickness change of batteries with the thin-film Si and conventional graphite anode.

Fig. 3. Cycle characteristics of the cell using a

LiCoO2cathode and the Si thin film anode.

0

100

200

300

400

500

0 10 20 30 40 50

Charge current: Carbon 300 mA, Silicon 400 mADischarge current: Carbon 300 mA, Silicon 400 mA

Cycle number

Dis

char

ge

cap

acity

(m

Ah

)

Silicon

Carbon

Temperature : RT

Charge current: Carbon 300 mA, Silicon 400 mADischarge current: Carbon 300 mA, Silicon 400 mA

Cycle number

Dis

char

ge

cap

acity

(m

Ah

)

Silicon

Carbon

Temperature : RT

0

1

2

3

4

5

Bef

ore

char

ge1s

t cha

rge

1st d

isch

arge

10th

cha

rge

10th

dis

char

ge20

th c

harg

e20

th d

isch

arge

30th

cha

rge

30th

dis

char

ge50

th c

harg

e50

th d

isch

arge

Th

ickn

ess

(mm

)

Carbon

Silicon

Temperature: RT

0

1

2

3

4

5

Bef

ore

char

ge1s

t cha

rge

1st d

isch

arge

10th

cha

rge

10th

dis

char

ge20

th c

harg

e20

th d

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arge

30th

cha

rge

30th

dis

char

ge50

th c

harg

e50

th d

isch

arge

Th

ickn

ess

(mm

)

Carbon

Silicon

Temperature: RT