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New gatable MCP-PMTs and their
performances in comparison with
semiconductor type detectors for SLR
applications
2013.11.12-15
Takeshi Taguchi, Masahiro Nakamura
Hamamatsu Photonics K. K.
Abstract
MCP-PMTs(Microchannel Plate Photomultiplier Tubes) and
semiconductor detectors such as APD (Avalanche Photo
Diode) are commonly used for SLR applications.
Performance of these detectors are compared on
parameters such as sensitivity, noise, temporal response,
timing jitter and other characteristics. The MCP-PMTs we
have developed show improvements in especially sensitivity
and noise induced by gating pulse.
We also focus on signal processing technic to optimize
detector performance and introduce other
possible detector modules for future applications. Other
possible applications using MCP-PMTs are discussed as
well for general laser ranging.
Introduction
New Gated MCP-PMTs introduced herein have been
improved in their performances. In particular, sensitivity (=
detection efficiency in this case) and time jitter (resolution)
are superior to the former type, R5916U series.
In comparison with semiconductor type detector, this new
gated MCP-PMT unit shows some advantages on its
performance.
Improvements in
Sensitivity and Time Resolution
Fig. 1 shows structures and operating principles of former
type (R5916U series) and new gated MCP-PMT. R5916U
has a grid electrode between the photocathode and MCP for
gating function but new one does not. In a case of new one,
a gate pulse is directly applied to the photocathode instead
of the grid electrode.
This results in improvement of detection efficiency (30%
UP!) because the grid electrode blocks some photoelectrons
passing through and also generates some time jitter caused
by low potential due to the gate pulse (10 to 50 V but 200 V with the new type) as shown in Fig. 2.
Photons
R R R
R
R R
High Voltage Power Supply
Gate
Driver
Pulse
Generator
Pulse
Generator
R
High Voltage Power Supply
R
Former Type (R5916U Series)
In Comparison with Former Types (R5916U Series)
【Structures(Sensor Head) & Operating Principles】
New Gated MCP-PMT
Fig. 1
Photocathode MCP
Grid
Electrode
Anode
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
-1200 -1000 -800 -600 -400 -200 0 200 400 600 800 1000 1200
Co
un
ts
Time(ps)
Time Resolution of New Gated MCP-PMT Unit
in comparison with R5916U
New Gatable MCP-PMT Unit
Time Jitter@FWHM = 42.8 ps
But Real Time Jitter is 24.6 ps obtained by deconvolution
Laser Pulse Width = 35 ps @FWHM
R5916U-50
Time Jitter@FWHM =90 ps But Real Time Jitter is 82.9 ps obtained by deconvolution Laser Pulse Width = 35 ps @FWHM
Note: This data was obtained by
Multialkali photocathode types
In Comparison with Former Types (R5916U Series)
【Improved Time Resolution】 Fig. 2
Other Characteristics
【Photocathode Sensitivities】 ①Multialkali ②Ext. Multialkali ③Bialkali
④CsTe ⑤GaAs ⑥Ext. GaAsP
⑦GaAsP
Other Characteristics
【Output Waveform】
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0 100 200 300 400 500 600 700 800
Rela
tive
Ou
tpu
t
Time [ps]
Rise Time: 150 [ps]
Fall Time: 360 [ps] [Note]
Light Source : Laser Diode
Pulse Width: 35 ps @FWHM
Output Waveform of New Gatable MCP-PMT
Photocathode:
Multialkali
Ext. Multiali
Bialkali
Other Characteristics
【Switching Noise Induced by Gate Pulse】
-1
0
1
2
3
4
5
6
0 20 40 60 80 100 120 140 160 180
Puls
e H
eig
ht
[V]
Time [ns]
Gate Input TTL Pulse
Fig. 7-1
-25-20-15-10-505
10152025
0 20 40 60 80 100 120 140 160 180
Ou
tpu
t [m
V]
Time [ns]
Switching Noise on Output
Low enough to discriminate !
R5916U Series New Gated MCP-PMT Unit
HVPS(#C9727)
Option
HVPS
(#C9727)
Included
Gate Driver
Included
Sensor Head
In Comparison with Former Types (R5916U Series)
【Photographs】
Sensor Head
R5916U Series
Sensor
Head
HVPS
C9727
Pulse
Generator
New Gated MCP-PMT
Sensor Head
HVPS
C9727
Gate
Driver
Signal Processing Circuit
Included Option
In Comparison with Former Types (R5916U Series)
【Constructions & Wiring】
Not provided by HPK
AMP C5594 Series
AMP C5594 Series Signal Processing Circuit
Pulse
Generator USB
USB
R5916U-50
(Multialkali)
New Gatable
MCP-PMT
(Multialkali)
New Gatable
MCP-PMT (GaAsP)
Semiconductor
Detector
Spectral Response Range [nm] 160 - 850 160 - 850 280 - 720 350 - 1100
Quantum Efficiency(QE) [%]
@532 nm (Typ.) 8 8 40 20
Effective Area (mm in diameter) 10 10 10 0.2
Gain (Min.) 1.0x105 1.0x105 1.0x105 -
Time Response
[ns] (Typ.)
Rise Time 0.18 0.15 0.18 0.7
Fall Time 0.7 0.4 0.4 -
Time Resolution (Jitter)
@FWHM [ps] (Typ.) 90 1) ≦25 2) 50 2) < 60
Dark Count Rate [s-1] @25 ℃
(Typ.) 1000 1000 10000 9000
Average Anode Current [nA]
(Max.) 100 100 100 -
Gating Time 5 ns -10 μs 100 ns - 50 μs 100 ns - 50 μs -
1) This value includes a jitter of the electronics and the pulse width (35 ps @FWHM) of the light source.
2) These values are obtained by deconvolution for the laser pulse width.
In Comparison with Semiconductor Type Detector
【Specifications】
Signal Processing Technic To minimize a time jitter;
Use CFD (Constant Fraction Discriminator)
Set right level for low discrimination and optimize
a time-walk of CFD
Gated
MCP-PMT
AMP
CFD
Time-Walk Adjustment
Low Level Disc.
Adjustment
Output
/Logic Pulse
Conclusion
New gated MCP-PMT units are now our standard
product.
They show better performance over the former
type, R5916U series. In particular, detection
efficiency and time resolution have been improved.
In comparison with semiconductor detectors, our
new gated MCP-PMTs show some advantages
over the specifications such as sensitivity
(GaAsP), time resolution (Multialkali) and wider
photocathode effective area (0.2 mm in diameter
for semiconductor type ⇒ 10 for ours)