New Product Introduction (NPI) DirectFET™ ‒ New Corner Gate StrongIRFET™

Kevin Ream, DCDC PMDJuly 2015

Copyright © Infineon Technologies AG 2014. All rights reserved.

New Corner Gate DirectFET™

Great new design for even lower Package Resistance

Unmatched device current rating >150 A in Medium Can

Significantly larger source solder area than existing Medium Can DirectFET™ footprints

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10 February 2015

MN Footprint ME Footprint

RTHJ-PCB = ~ 1.0 ⁰ C/W RTHJ-PCB = 0.75 ⁰C/W

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Copyright © Infineon Technologies AG 2014. All rights reserved.

ME-Type DirectFET ™ vs PQFN

ME-Type DirectFET™ has four times larger source contact area than a typical 5x6 PQFN package

Much higher current density and higher reliability

Ideal for high performance Power tools and RoHS 6 compliant equipment

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10 February 2015

ME DirectFET ™ :

3.7mm2 source contact area:

5x6 PQFN:

< 1mm2 source contact area

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Copyright © Infineon Technologies AG 2015. All rights reserved.

New Corner Gate Pad for Scalable Designs

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May 2015

Single pad layout accommodates multiple footprints

Optimized RDS(on) for lowest possible losses

IRF7483TRPBF~60% Die Size

Fits on same footprint

IRF7480TRPBF100% Die Size

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Copyright © Infineon Technologies AG 2014. All rights reserved.

DirectFET™ Portfolio – Medium Can, Corner Gate

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10 February 2015

ME MF

Part Number Package OutlineVDS

(V)

RDS(on) (mΩ)

Typ/Max@ 10 V

ID(A)

QG (nC)

IRF7480MTRPBF Medium Can DirectFET™ ME 40 0.9 / 1.2 217 123

IRF7483MTRPBF Medium Can DirectFET™ MF 40 1.7 / 2.3 135 81

IRF60DM206 Medium Can DirectFET™ ME 60 2.2 / 2.9 130 133

IRF7580MTRPBF Medium Can DirectFET™ ME 60 2.9 / 3.6 114 120

IRF7780MTRPBF Medium Can DirectFET™ ME 75 4.5 / 5.7 89 124

Part Numbers, Pricing and Documentation Links

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2013-09-25

Copyright © Infineon Technologi

es AG 2013. All

rights reserved.

Part Numbers Samples Available Production Package Registerable(Y/N) MOQStarting MSRP

$ per pieceRoHS (Y/N)

IRF7480MTRPBF now now DirectFET™ ME Y 4800 Y

IRF7483MTRPBF now now DirectFET™ MF Y 4800 0.45 in qty of 10K Y

IRF60DM206 now now DirectFET™ ME Y 4800 Y

IRF7580MTRPBF now now DirectFET™ ME Y 4800 Y

IRF7780MTRPBF now now DirectFET™ ME Y 4800 Y

Copyright © Infineon Technologies AG 2015. All rights reserved.

StrongIRFET™ Corner Gate DirectFET™

http://www.infineon.com/strongirfet

For more information, please visit the product pages on the Infineon website.

Support

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May 2015

Copyright © Infineon Technologies AG 2015. All rights reserved.

Summary

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May 2015

Key Features and Benefits:― Ultra-low RDS(on)

― High current rating

― Rugged silicon

― Improved gate, avalanche and dynamic dv/dt ruggedness

― Lower thermal resistance to PCB

― High current density

― Scalability of designs

― RoHS 6 compliant

Target Applications: