NJG1133MD7 UMTS Triple Band LNA GaAs MMIC · 2019-07-31 · NJG1133MD7 Ver.2013-04-23 - 1 - UMTS Triple Band LNA GaAs MMIC GENERAL DISCRIPTION PACKAGE OUTLINE NJG1133MD7 is a triple

NJG1133MD7

- 1 -Ver.2013-04-23

UMTS Triple Band LNA GaAs MMIC

GENERAL DISCRIPTION PACKAGE OUTLINE

NJG1133MD7 is a triple band LNA IC designed for UMTS and LTE.

This IC has a LNA pass-through function to select high gain mode

or suitable low gain mode. The LNA of 1.7GHz band can be used

to 1.5GHz band by changing application circuit.

An ultra-small and ultra-thin package of EQFN14-D7 is adopted.

APPLICATIONS

2.1GHz, 1.7GHz and 800MHz triple band of standard condition application

Any dual High-band and single Low-band combination for LTE and UMTS applications,

like Band1,2 and 5,Band1,3 and 5,Band1,2 and 8

FEATURES Low operation voltage +2.8V typ. Low control voltage +1.8V typ. Low current consumption 2.3mA typ. @High Gain Mode

48µA typ. @Low Gain Mode Small and thin package EQFN14-D7 (Package size: 1.6 x 1.6 x 0.397mm typ.)

[High Gain Mode]

High gain 16.0dB typ. @fRF=2140MHz, 885MHz, 1860MHz, 1495MHz

Low noise figure 1.35dB typ. @fRF=2140MHz, 1860MHz

1.40dB typ. @fRF=885MHz 1.55dB typ. @fRF=1495MHz

High input IP3 +0.5dBm typ. @fRF=2140.0+2140.1MHz, Pin=-30dBm

-2.0dBm typ. @fRF=885.0+885.1MHz, Pin=-30dBm 0dBm typ. @fRF=1860.0+1860.1MHz, Pin=-30dBm 0dBm typ. @fRF=1495.0+1495.1MHz, Pin=-30dBm [Low Gain Mode]

Gain -3.5dB typ. @fRF=2140MHz

-3.0dB typ. @fRF=885MHz, 1495MHz -4.0dB typ. @fRF=1860MHz

High input IP3 +12dBm typ. @fRF=2140.0+2140.1MHz, Pin=-16dBm

+12dBm typ. @fRF=885.0+885.1MHz, Pin=-20dBm +15dBm typ. @fRF=1860.0+1860.1MHz, Pin=-16dBm +15dBm typ. @fRF=1495.0+1495.1MHz, Pin=-16dBm

PIN CONFIGURATION

Pin Connection 1. GND 8. GND 2. VCTL2 9. GND 3. VCTL1 10. RFIN3 (1.7G/1.5GHz) 4. GND 11. GND 5. RFOUT1 (800MHz) 12. RFIN2 (2.1GHz) 6. RFOUT2 (2.1GHz) 13. RFIN1 (800MHz) 7. RFOUT3 (1.7G/1.5GHz) 14. VCTL3

NJG1133MD7

(Top View)

13

RFIN2

RFIN1RFOUT2

GND

VCTL2

VCTL3

VCTL1

Logic

Circuit

RFOUT3

RFIN3

RFOUT1

1.7GHz Band

Bias

Circuit

Bias

Circuit

Bias

Circuit

GND

2.1GHz Band

800MHz Band

6

5

7

14

12

13

GND2 41 3

10 811 9GNDGND

1pin

1.7GHz

Band

Note: Specifications and description listed in this datasheet are subject to change without prior notice.

Note: For except of standard condition applications please refer to Application Note

NJG1133MD7

- 2 -

ABSOLUTE MAXIMUM RATINGS

Ta=+25°C, Zs=Zl=50Ω

PARAMETERS SYMBOL CONDITIONS RATINGS UNITS

Operating voltage VDD 5.0 V

Control voltage VCTL VCTL1,2,3 terminal 5.0 V

Input power Pin +15 dBm

Power dissipation PD 4-layer FR4 PCB with through-hole

(74.2x74.2mm), Tj=150°C 1300 mW

Operating temperature Topr -40~+85 °C

Storage temperature Tstg -55~+150 °C

ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS)

General conditions: VDD=2.8V, Ta=+25°C, Zs=Zl=50Ω, with application circuit

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Operating voltage VDD 2.7 2.8 3.6 V

Control voltage1 (High) VCTL1(H) 1.36 1.8 3.6 V

Control voltage1 (Low) VCTL1(L) 0 0 0.3 V

Control voltage 2 (High) VCTL2(H) 1.36 1.8 3.6 V

Control voltage 2 (Low) VCTL2(L) 0 0 0.3 V

Control voltage 3 (High) VCTL3(H) 1.36 1.8 3.6 V

Control voltage 3 (Low) VCTL3(L) 0 0 0.3 V

Operating current 1 2.1GHz Band High Gain mode

IDD1 VCTL1=0V, VCTL2=0V, VCTL3=1.8V, RF OFF

- 2.3 3.1 mA

Operating current 2 800MHz Band high Gain mode

IDD2 VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, RF OFF

- 2.3 3.1 mA


IDD3 VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, RF OFF

- 2.3 3.1 mA


IDD4 VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V, RF OFF

- 2.3 3.1 mA

Operating current 5 IDD5 VCTL3=0V, RF OFF - 48 85 µA

Control current 1 ICTL1 VCTL1=1.8V - 5.5 8.5 µA



NJG1133MD7

- 3 -

ELECTRICAL CHARACTERISTICS 2 (2.1GHz Band High Gain Mode) General conditions: VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=2140MHz, Ta=+25°C,

Zs=Zl=50Ω, with application circuit


Small signal gain 1 Gain1 Exclude PCB & connector losses (IN: 0.09dB, OUT: 0.36dB)

14.5 16.0 17.5 dB

Noise figure 1 NF1 Exclude PCB & connector losses (IN: 0.09dB)

- 1.35 1.5 dB

Input Power at 1dB gain compression point 1

P-1dB(IN)_1 -15.0 -11.5 - dBm

Input 3rd order intercept point 1

IIP3_1 f1=fRF, f2=fRF+100kHz, Pin=-30dBm

-9.0 +0.5 - dBm

RF Input VSWR 1 VSWRi1 - 1.5 2.0

RF Output VSWR 1 VSWRo1 - 2.0 2.5

ELECTRICAL CHARACTERISTICS 3 (2.1GHz Band Low Gain Mode)

General conditions: VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=2140MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit



-5.0 -3.5 -2.0 dB


- 3.5 6.0 dB


P-1dB(IN)_2 +5.0 +14.0 - dBm



0 +12.0 - dBm



NJG1133MD7

- 4 -

ELECTRICAL CHARACTERISTICS 4 (800MHz Band High Gain Mode) General conditions: VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, fRF=885MHz, Ta=+25°C,



Small signal gain 3 Gain3 Exclude PCB & connector losses (IN: 0.06dB, OUT: 0.16dB) 14.3 16.0 17.3 dB


- 1.40 1.65 dB


P-1dB(IN)_3 -16.0 -9.5 - dBm



-10.0 -2.0 - dBm



ELECTRICAL CHARACTERISTICS 5 (800MHz Band Low Gain Mode)

General conditions: VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, fRF=885MHz, Ta=+25°C,




-4.5 -3.0 -2.0 dB

Noise figure 4 NF4 Exclude PCB & connector losses (IN: 0.06dB) - 3.0 6.0 dB


P-1dB(IN)4 +4.5 +17.0 - dBm



+2.0 +12.0 - dBm



NJG1133MD7

- 5 -

ELECTRICAL CHARACTERISTICS 6 (1.7GHz Band High Gain Mode) General conditions: VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, fRF=1860MHz, Ta=+25°C,



Small signal gain 5 Gain5 Exclude PCB & connector losses (IN: 0.10dB, OUT: 0.31dB) 14.5 16.0 17.5 dB

Noise figure 5 NF5 Exclude PCB & connector losses (IN: 0.10dB) - 1.35 1.6 dB


P-1dB(IN)_5 -16.0 -8.0 - dBm



-9.0 0 - dBm




General conditions: VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V, fRF=1860MHz, Ta=+25°C,




-5.5 -4.0 -2.0 dB


- 4.0 6.5 dB


P-1dB(IN)_6 +4.0 +16.0 - dBm



0 +15.0 - dBm



NJG1133MD7

- 6 -

ELECTRICAL CHARACTERISTICS 8 (1.5GHz Band High Gain Mode) General conditions: VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V, fRF=1495MHz, Ta=+25°C,




14.5 16.0 18.0 dB


- 1.55 1.75 dB


P-1dB(IN)_7 -16.0 -9.0 - dBm



-6.0 0 - dBm




General conditions: VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V, fRF=1495MHz, Ta=+25°C,




-5.0 -3.0 -2.0 dB


- 3.0 6.0 dB


P-1dB(IN)_8 +4.0 +16.0 - dBm



0 +15.0 - dBm



ELECTRICAL CHARACTERISTICS 10

General conditions: VDD=2.7V, Ta=+25°C, Zs=Zl=50Ω, with application circuit


Gain dynamic range 1

(2.1GHz Band) GDR_1

(Gain@High Gain mode) - (Gain@Low Gain mode), f=2140MHz VCTL1=0V, VCTL2=0V, VCTL3=0 or 1.8V

17.5 19.5 21.0 dB


(800MHz Band) GDR_2

(Gain@High Gain mode) - (Gain@Low Gain mode), f=885MHz VCTL1=1.8V, VCTL2=0V, VCTL3=0 or 1.8V

17.5 19.0 20.5 dB


(1.7GHz Band) GDR_3

(Gain@High Gain mode) - (Gain@Low Gain mode), f=1860MHz VCTL1=0V, VCTL2=1.8V, VCTL3=0 or 1.8V

18.0 20.0 21.5 dB


(1.5GHz Band) GDR_4

(Gain@High Gain mode) - (Gain@Low Gain mode), f=1495MHz VCTL1=1.8V, VCTL2=1.8V, VCTL3=0 or 1.8V

17.5 19.5 21.0 dB

NJG1133MD7

- 7 -

TRUTH TABLE

“L”=0 ~ 0.30V, “H”=1.36 ~ 1.9 V

TERMINAL INFORMATION

Notes: Ground terminal (No.1, 4, 8, 9, 11) should be connected with the ground plane as short as

possible.

Control voltage Operating state

2.1GHz Band 800MHz Band 1.7GHz(or 1.5GHz)

Band VCTL1 (Band Sel1)

VCTL2 (Band Sel2)

VCTL3 (Gain Sel1)

LNA Bypass LNA Bypass LNA Bypass

L L L OFF ON OFF ON OFF ON

L L H ON OFF OFF OFF OFF OFF

H L L OFF ON OFF ON OFF ON

H L H OFF OFF ON OFF OFF OFF

L H L OFF ON OFF ON OFF ON

L H H OFF OFF OFF OFF ON OFF

H H L OFF ON OFF ON OFF ON

H H H OFF OFF OFF OFF ON OFF

No. SYMBOL DESCRIPTION

1 GND GND terminal (0V)

2 VCTL2

3 VCTL1

Control voltage supply terminal. The frequency band (2GHz / 800MHz / 1.7GHz or 1.5GHz) is selected by 2bit control signal. (Please refer to truth table.)


5 RFOUT1 Output terminal of 800MHz band. This terminal is also the power supply terminal of the LNA, please use inductor (L3) to connect power supply.

6 RFOUT2 Output terminal of 2.1GHz band. This terminal is also the power supply terminal of the LNA, please use inductor (L6) to connect power supply.

7 RFOUT3 Output terminal of 1.7GHz(or 1.5GHz) band. This terminal is also the power supply terminal of the LNA, please use inductor (L9) to connect power supply.



10 RFIN3 RF input terminal of 1.7GHz(or 1.5GHz) band. The RF signal is input through external matching circuit connected to this terminal. The DC blocking capacitor is not required.


12 RFIN2 RF input terminal of 2.1GHz band. The RF signal is input through external matching circuit connected to this terminal. The DC blocking capacitor is not required.

13 RFIN1 RF input terminal of 800MHz band. The RF signal is input through external matching circuit connected to this terminal. The DC blocking capacitor is not required.

14 VCTL3 Control voltage supply terminal. High gain mode or low gain mode is selected by applying this terminal.

NJG1133MD7

- 8 -

ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode)

-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

2.1GHz @High Gain

Pout vs. Pin(f=2140MHz)

Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=-9.3dBm

0

5

10

15

20

-40 -30 -20 -10 0 10

2.1GHz @High Gain

Gain, IDD vs. Pin(f=2140MHz)

0

2

4

6

8

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=-9.3dBm

IDD (mA)

IDD

0

0.5

1

1.5

2

2.5

3

3.5

4

2 2.05 2.1 2.15 2.2 2.25 2.3

2.1GHz @High Gain

NF, Gain vs. frequency(f=2.0~2.3GHz)

4

6

8

10

12

14

16

18

20

Gain (dB)

frequency (GHz)

Gain

NF

NF (dB)

(Exclude PCB, Connector Losses)

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

2.1GHz @High Gain

Pout, IM3 vs. Pin(f1=2140MHz, f2=f1+100kHz)

Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=-0.1dBm

IM3

Condition

Ta=+25,

VDD =2.7V,

VCTL1=0V, VCTL2=0V, VCTL3=1.8V

Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,

VCTL1=0V, VCTL2=0V, VCTL3=1.85

NJG1133MD7

- 9 -


-18

-16

-14

-12

-10

-8

-6

-4

2.1 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18

2.1GHz @High Gain

P-1dB(IN) vs. frequency(f=2.11~2.17GHz)

frequency (GHz)

P-1dB(IN)

P-1dB(IN) (dBm)

12

13

14

15

16

17

18

19

20

2.1 2.12 2.14 2.16 2.18 2.2

2.1GHz @High Gain

OIP3, IIP3 vs. frequency(f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm)

-2

-1

0

1

2

3

4

5

6

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


NJG1133MD7

- 10 -


10

11

12

13

14

15

16

17

18

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

2.1GHz @High Gain

Gain, NF vs. VDD

0

0.5

1

1.5

2

2.5

3

3.5

4

VDD (V)

Gain

Gain (dB)

NF

NF (dB)

11

12

13

14

15

16

17

18

19

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

2.1GHz @High Gain

OIP3, IIP3 vs. VDD

-3

-2

-1

0

1

2

3

4

5

VDD (V)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

Condition

Ta=+25,

f=2140MHz,


Condition

Ta=+25,

f1=2140MHz, f2=f1+100kHz,

Pin=-30dBm,


-10

-9

-8

-7

-6

-5

-4

-3

-2

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

2.1GHz @High Gain

P-1dB(IN) vs. VDD

VDD (V)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

2.1GHz @High Gain

VSWR vs. VDD

VSWRiVSWRo

VDD (V)

VSWR

Condition

Ta=+25,

f=2140MHz,


Condition

Ta=+25,

f=2140MHz,


NJG1133MD7

- 11 -


0

0.5

1

1.5

2

2.5

3

3.5

4

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

2.1GHz @High Gain

IDD vs. VDD

VDD (V)

IDD

IDD (mA)

Condition

Ta=+25,

RF=OFF,


NJG1133MD7

- 12 -


11

12

13

14

15

16

17

18

19

-60 -40 -20 0 20 40 60 80 100

2.1GHz @High Gain

Gain, NF vs. Temperature(f=2.14GHz, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V)

0

0.5

1

1.5

2

2.5

3

3.5

4

Temperature (oC)

Gain

Gain (dB)

NF

NF (dB)


7

8

9

10

11

12

13

14

15

16

17

-60 -40 -20 0 20 40 60 80 100

2.1GHz @High Gain

OIP3H1, IIP3H1 vs. Temperature(f=2.14+2.1401GHz, Pin=-30dBm, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V)

-5

-4

-3

-2

-1

0

1

2

3

4

5

Temperature (oC)

OIP3H1

OIP3H1 (dBm)

IIP3H1 (dBm)

IIP3H1

-18

-16

-14

-12

-10

-8

-6

-4

-60 -40 -20 0 20 40 60 80 100

2.1GHz @High Gain

P-1dB(IN) vs. Temperature(f=2.14GHz, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V)

Temperature (oC)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

-60 -40 -20 0 20 40 60 80 100

2.1GHz @High Gain

VSWRi, VSWRo vs. Temperature(f=2.14GHz, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V)

VSWRiVSWRo

Temperature (oC)

VSWR

NJG1133MD7

- 13 -


0

1

2

3

4

5

-60 -40 -20 0 20 40 60 80 100

2.1GHz @High Gain

IDD vs. Temperature(VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, RF=OFF)

Temperature (oC)

IDD

IDD (mA)

NJG1133MD7

- 14 -


Condition：Ta=+25, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V

NJG1133MD7

- 15 -


0

5

10

15

20

0 5 10 15 20

2.1GHz @High Gain

k factor vs. frequency(f=50MHz~20GHz)

frequency (GHz)

k factor

Condition：Ta=+25, VDD= 2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V

NJG1133MD7

- 16 -

ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode)

-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

2.1GHz @Low Gain


Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=+14.1dBm

-12

-10

-8

-6

-4

-2

0

-40 -30 -20 -10 0 10 20

2.1GHz @Low Gain


25

30

35

40

45

50

55

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=+14.1dBm

IDD (uA)

IDD

0

2

4

6

8

10

12

14

2 2.05 2.1 2.15 2.2 2.25 2.3

2.1GHz @Low Gain


-14

-12

-10

-8

-6

-4

-2

0

Gain (dB)

frequency (GHz)

Gain

NFNF (dB)


-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

2.1GHz @Low Gain


Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=+11.2dBm

IM3

Condition

Ta=+25,

VDD= 2.7V,

VCTL1=0V, VCTL2=0V, VCTL3=0V

Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD=2.7V,


Condition

Ta=+25,

VDD= 2.7V,


NJG1133MD7

- 17 -

ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode) 4

6

8

10

12

14

16

18

20

2.1 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18

2.1GHz @Low Gain


frequency (GHz)

P-1dB(IN)

P-1dB(IN) (dBm)

6

7

8

9

10

11

12

13

14

2.1 2.12 2.14 2.16 2.18 2.2

2.1GHz @Low Gain


6

7

8

9

10

11

12

13

14

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


NJG1133MD7

- 18 -


-6

-5

-4

-3

-2

-1

0

1

2

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

2.1GHz @Low Gain

Gain, NF vs. VDD

-2

-1

0

1

2

3

4

5

6

VDD (V)

Gain

Gain (dB)

NF

NF (dB)

5

6

7

8

9

10

11

12

13

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

2.1GHz @Low Gain

OIP3, IIP3 vs. VDD

5

6

7

8

9

10

11

12

13

VDD (V)

OIP3

OIP3 (dBm) IIP3

IIP3 (dBm)

12

13

14

15

16

17

18

19

20

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

2.1GHz @Low Gain

P-1dB(IN) vs. VDD

VDD (V)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

2.1GHz @Low Gain

VSWR vs. VDD

VSWRiVSWRo

VDD (V)

VSWR

Condition

Ta=+25,

f=2140MHz,


Condition

Ta=+25,

f1=2140MHz, f2=f1+100kHz,

Pin=-16dBm,


Condition

Ta=+25,

f=2140MHz,


Condition

Ta=+25,

f=2140MHz,


NJG1133MD7

- 19 -


25

30

35

40

45

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

2.1GHz @Low Gain

IDD vs. VDD

VDD (V)

IDD

IDD (uA)

Condition

Ta=+25,

RF=OFF,


NJG1133MD7

- 20 -


-9

-8

-7

-6

-5

-4

-3

-2

-1

-60 -40 -20 0 20 40 60 80 100

2.1GHz @Low Gain

Gain, NF vs. Temperature(f=2.14GHz, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V)

2

3

4

5

6

7

8

9

10

Temperature (oC)

Gain

Gain (dB)

NF

NF (dB)


4

5

6

7

8

9

10

11

12

13

-60 -40 -20 0 20 40 60 80 100

2.1GHz @Low Gain

OIP3, IIP3 vs. Temperature(f=2.14+2.1401GHz, Pin=-16dBm, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V)

7

8

9

10

11

12

13

14

15

16

Temperature (oC)

OIP3

OIP3 (dBm)

IIP3 (dBm)

IIP3

6

8

10

12

14

16

18

20

-60 -40 -20 0 20 40 60 80 100

2.1GHz @Low Gain

P-1dB(IN) vs. Temperature(f=2.14GHz, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V)

Temperature (oC)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

-60 -40 -20 0 20 40 60 80 100

2.1GHz @Low Gain

VSWRi, VSWRo vs. Temperature(f=2.14GHz, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V)

VSWRiVSWRo

Temperature (oC)

VSWR

NJG1133MD7

- 21 -


0

10

20

30

40

50

-60 -40 -20 0 20 40 60 80 100

2.1GHz @Low Gain

IDD vs. Temperature(VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, RF=OFF)

Temperature (oC)

IDD

IDD (uA)

NJG1133MD7

- 22 -


Condition：Ta=+25, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V

NJG1133MD7

- 23 -


0

5

10

15

20

0 5 10 15 20

2.1GHz @Low Gain


frequency (GHz)

k factor

Condition：Ta=+25, VDD= 2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V

NJG1133MD7

- 24 -

ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode)

-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

800MHz @High Gain


Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=-9.3dBm

0

5

10

15

20

-40 -30 -20 -10 0 10

800MHz @High Gain


0

2

4

6

8

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=-9.3dBm

IDD (mA)

IDD

0

0.5

1

1.5

2

2.5

3

3.5

4

750 800 850 900 950 1000

800MHz @High Gain

NF, Gain vs. frequency(f=750~1000MHz)

4

6

8

10

12

14

16

18

20

Gain (dB)

frequency (MHz)

Gain

NF

NF (dB)


-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

800MHz @High Gain


Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=-2.1dBm

IM3

Condition

Ta=+25,

VDD= 2.7V,

VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


NJG1133MD7

- 25 -


-18

-16

-14

-12

-10

-8

-6

-4

860 870 880 890 900 910

800MHz @High Gain

P-1dB(IN) vs. frequency(f=869~900MHz)

frequency (MHz)

P-1dB(IN)

P-1dB(IN) (dBm)

9

10

11

12

13

14

15

16

17

860 870 880 890 900 910

800MHz @High Gain

OIP3, IIP3 vs. frequency(f1=860~910MHz, f2=f1+100kHz, Pin=-30dBm)

-4

-3

-2

-1

0

1

2

3

4

frequency (MHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


NJG1133MD7

- 26 -


10

11

12

13

14

15

16

17

18

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

800MHz @High Gain

Gain, NF vs. VDD

0

0.5

1

1.5

2

2.5

3

3.5

4

VDD (V)

Gain

Gain (dB)

NF

NF (dB)

11

12

13

14

15

16

17

18

19

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

800MHz @High Gain

OIP3, IIP3 vs. VDD

-3

-2

-1

0

1

2

3

4

5

VDD (V)

OIP3OIP3 (dBm)

IIP3

IIP3 (dBm)

-10

-9

-8

-7

-6

-5

-4

-3

-2

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

800MHz @High Gain

P-1dB(IN) vs. VDD

VDD (V)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

800MHz @High Gain

VSWR vs. VDD

VSWRiVSWRo

VDD (V)

VSWR

Condition

Ta=+25,

f1=885MHz, f2=f1+100kHz,

Pin=-30dBm,


Condition

Ta=+25,

f=885MHz,


Condition

Ta=+25,

f=885MHz,


Condition

Ta=+25,

f=885MHz,


NJG1133MD7

- 27 -


0

0.5

1

1.5

2

2.5

3

3.5

4

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

800MHz @High Gain

IDD vs. VDD

VDD (V)

IDD

IDD (mA)

Condition

Ta=+25,

RF=OFF


NJG1133MD7

- 28 -


11

12

13

14

15

16

17

18

19

-60 -40 -20 0 20 40 60 80 100

800MHz @High Gain

Gain, NF vs. Temperature(f=885MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V)

0

0.5

1

1.5

2

2.5

3

3.5

4

Temperature (oC)

Gain

Gain (dB)

NF

NF (dB)


7

8

9

10

11

12

13

14

15

16

17

-60 -40 -20 0 20 40 60 80 100

800MHz @High Gain

OIP3H1, IIP3H1 vs. Temperature(f=885+885.1MHz, Pin=-30dBm, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V)

-6

-5

-4

-3

-2

-1

0

1

2

3

4

Temperature (oC)

OIP3H1

OIP3H1 (dBm)

IIP3H1 (dBm)

IIP3H1

-18

-16

-14

-12

-10

-8

-6

-4

-60 -40 -20 0 20 40 60 80 100

800MHz @High Gain

P-1dB(IN) vs. Temperature(f=885MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V)

Temperature (oC)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

-60 -40 -20 0 20 40 60 80 100

800MHz @High Gain

VSWRi, VSWRo vs. Temperature(f=885MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V)

VSWRiVSWRo

Temperature (oC)

VSWR

NJG1133MD7

- 29 -


0

10

20

30

40

50

-60 -40 -20 0 20 40 60 80 100

800MHz @Low Gain

IDD vs. Temperature(VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, RF=OFF)

Temperature (oC)

IDD

IDD (uA)

NJG1133MD7

- 30 -


Condition：Ta=+25, VDD= 2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

NJG1133MD7

- 31 -


0

5

10

15

20

0 5 10 15 20

800MHz @High Gain


frequency (GHz)

k factor

Condition：Ta=+25, VDD= 2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

NJG1133MD7

- 32 -

ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode)

-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

800MHz @Low Gain


Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=+17.7dBm

-12

-10

-8

-6

-4

-2

0

-40 -30 -20 -10 0 10 20

800MHz @Low Gain


25

30

35

40

45

50

55

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=+17.7dBm

IDD (uA)

IDD

0

2

4

6

8

10

12

14

750 800 850 900 950 1000

800MHz @Low Gain

NF, Gain vs. frequency(f=750~1000MHz)

-14

-12

-10

-8

-6

-4

-2

0

Gain (dB)

frequency (MHz)

Gain

NF

NF (dB)


-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

800MHz @Low Gain


Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=+14.5dBm

IM3

Condition

Ta=+25,

VDD= 2.7V,

VCTL1=1.8V, VCTL2=0V, VCTL3=0V

Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


NJG1133MD7

- 33 -


6

8

10

12

14

16

18

20

22

860 870 880 890 900 910

800MHz @Low Gain


frequency (MHz)

P-1dB(IN)

P-1dB(IN) (dBm)

9

10

11

12

13

14

15

16

17

860 870 880 890 900 910

800MHz @Low Gain

OIP3, IIP3 vs. frequency(f1=860~910MHz, f2=f1+100kHz, Pin=-20dBm)

9

10

11

12

13

14

15

16

17

frequency (MHz)

OIP3

OIP3 (dBm) IIP3

IIP3 (dBm)

Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


NJG1133MD7

- 34 -


-6

-5

-4

-3

-2

-1

0

1

2

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

800MHz @Low Gain

Gain, NF vs. VDD

-2

-1

0

1

2

3

4

5

6

VDD (V)

Gain

Gain (dB)

NF

NF (dB)

8

9

10

11

12

13

14

15

16

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

800MHz @Low Gain

OIP3, IIP3 vs. VDD

9

10

11

12

13

14

15

16

17

VDD (V)

OIP3

OIP3 (dBm) IIP3

IIP3 (dBm)

12

13

14

15

16

17

18

19

20

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

800MHz @Low Gain

P-1dB(IN) vs. VDD

VDD (V)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

800MHz @Low Gain

VSWR vs. VDD

VSWRiVSWRo

VDD (V)

VSWR

Condition

Ta=+25,

f1=885MHz, f2=f1+100kHz,

Pin=-20dBm,


Condition

Ta=+25,

f=885MHz,


Condition

Ta=+25,

f=885MHz,


Condition

Ta=+25,

f=885MHz,


NJG1133MD7

- 35 -


25

30

35

40

45

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

800MHz @Low Gain

IDD vs. VDD

VDD (V)

IDD

IDD (uA)

Condition

Ta=+25,

RF=OFF


NJG1133MD7

- 36 -


-9

-8

-7

-6

-5

-4

-3

-2

-1

-60 -40 -20 0 20 40 60 80 100

800MHz @Low Gain

Gain, NF vs. Temperature(f=885MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V)

2

3

4

5

6

7

8

9

10

Temperature (oC)

Gain

Gain (dB)

NF

NF (dB)


4

5

6

7

8

9

10

11

12

13

-60 -40 -20 0 20 40 60 80 100

800MHz @Low Gain

OIP3, IIP3 vs. Temperature(f=885+885.1MHz, Pin=-20dBm, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V)

7

8

9

10

11

12

13

14

15

16

Temperature (oC)

OIP3

OIP3 (dBm)

IIP3 (dBm)

IIP3

6

8

10

12

14

16

18

20

-60 -40 -20 0 20 40 60 80 100

800MHz @Low Gain

P-1dB(IN) vs. Temperature(f=885MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V)

Temperature (oC)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

-60 -40 -20 0 20 40 60 80 100

800MHz @Low Gain

VSWRi, VSWRo vs. Temperature(f=885MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V)

VSWRiVSWRo

Temperature (oC)

VSWR

NJG1133MD7

- 37 -


0

10

20

30

40

50

-60 -40 -20 0 20 40 60 80 100

800MHz @Low Gain

IDD vs. Temperature(VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, RF=OFF)

Temperature (oC)

IDD

IDD (uA)

NJG1133MD7

- 38 -


Condition：Ta=+25, VDD= 2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V

NJG1133MD7

- 39 -


0

5

10

15

20

0 5 10 15 20

800MHz @Low Gain


frequency (GHz)

k factor

Condition：Ta=+25, VDD= 2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V

NJG1133MD7

- 40 -


-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

1.7GHz @High Gain


Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=-9.0dBm

0

5

10

15

20

-40 -30 -20 -10 0 10

1.7GHz @High Gain


0

2

4

6

8

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=-9.0dBm

IDD (mA)

IDD

0

0.5

1

1.5

2

2.5

3

3.5

4

1.7 1.75 1.8 1.85 1.9 1.95 2

1.7GHz @High Gain

NF, Gain vs. frequency(f=1.7GHz~2.0GHz)

4

6

8

10

12

14

16

18

20

Gain (dB)

frequency (GHz)

Gain

NF

NF (dB)


-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

1.7GHz @High Gain


Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=-0.5dBm

IM3

Condition

Ta=+25,

VDD= 2.7V,

VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


NJG1133MD7

- 41 -

ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode) Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


-18

-16

-14

-12

-10

-8

-6

-4

1.83 1.84 1.85 1.86 1.87 1.88 1.89

1.7GHz @High Gain


frequency (GHz)

P-1dB(IN)

P-1dB(IN) (dBm)

9

10

11

12

13

14

15

16

17

1.8 1.82 1.84 1.86 1.88 1.9

1.7GHz @High Gain


-4

-3

-2

-1

0

1

2

3

4

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3 IIP3 (dBm)

NJG1133MD7

- 42 -


Condition

Ta=+25,

f=1860MHz,


Condition

Ta=+25,

f1=1860MHz, f2=f1+100kHz,

Pin=-30dBm,


Condition

Ta=+25,

f=1860MHz,


Condition

Ta=+25,

f=1860MHz,


10

11

12

13

14

15

16

17

18

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.7GHz @High Gain

Gain, NF vs. VDD

0

0.5

1

1.5

2

2.5

3

3.5

4

VDD (V)

Gain

Gain (dB)

NF

NF (dB)

11

12

13

14

15

16

17

18

19

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.7GHz @High Gain

OIP3, IIP3 vs. VDD

-3

-2

-1

0

1

2

3

4

5

VDD (V)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

-10

-9

-8

-7

-6

-5

-4

-3

-2

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.7GHz @High Gain

P-1dB(IN) vs. VDD

VDD (V)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.7GHz @High Gain

VSWR vs. VDD

VSWRiVSWRo

VDD (V)

VSWR

NJG1133MD7

- 43 -


Condition

Ta=+25,

RF=OFF


0

0.5

1

1.5

2

2.5

3

3.5

4

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.7GHz @High Gain

IDD vs. VDD

VDD (V)

IDD

IDD (mA)

NJG1133MD7

- 44 -


11

12

13

14

15

16

17

18

19

-60 -40 -20 0 20 40 60 80 100

1.7GHz @High Gain

Gain, NF vs. Temperature(f=1860MHz, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V)

0

0.5

1

1.5

2

2.5

3

3.5

4

Temperature (oC)

Gain

Gain (dB)

NF

NF (dB)


7

8

9

10

11

12

13

14

15

16

17

-60 -40 -20 0 20 40 60 80 100

1.7GHz @High Gain

OIP3H1, IIP3H1 vs. Temperature(f=1860+1860.1MHz, Pin=-30dBm, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V)

-5

-4

-3

-2

-1

0

1

2

3

4

5

Temperature (oC)

OIP3H1

OIP3H1 (dBm)

IIP3H1 (dBm)

IIP3H1

-18

-16

-14

-12

-10

-8

-6

-4

-60 -40 -20 0 20 40 60 80 100

1.7GHz @High Gain

P-1dB(IN) vs. Temperature(f=1860MHz, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V)

Temperature (oC)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

-60 -40 -20 0 20 40 60 80 100

1.7GHz @High Gain

VSWRi, VSWRo vs. Temperature(f=1860MHz, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V)

VSWRiVSWRo

Temperature (oC)

VSWR

NJG1133MD7

- 45 -


0

1

2

3

4

5

-60 -40 -20 0 20 40 60 80 100

1.7GHz @High Gain

IDD vs. Temperature(VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, RF=OFF)

Temperature (oC)

IDD

IDD (mA)

NJG1133MD7

- 46 -


Condition：Ta=+25, VDD= 2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

NJG1133MD7

- 47 -


Condition：Ta=+25, VDD= 2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

0

5

10

15

20

0 5 10 15 20

1.7GHz @High Gain


frequency (GHz)

k factor

NJG1133MD7

- 48 -


Condition

Ta=+25,

VDD= 2.7V,

VCTL1=0V, VCTL2=1.8V, VCTL3=0V

Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

1.7GHz @Low Gain


Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=+16.5dBm

-12

-10

-8

-6

-4

-2

0

-40 -30 -20 -10 0 10 20

1.7GHz @Low Gain


25

30

35

40

45

50

55

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=+16.5dBm

IDD (uA)

IDD

0

2

4

6

8

10

12

14

1.7 1.75 1.8 1.85 1.9 1.95 2

1.7GHz @Low Gain


-14

-12

-10

-8

-6

-4

-2

0

Gain (dB)

frequency (GHz)

Gain

NF

NF (dB)


-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

1.7GHz @Low Gain


Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=+15.3dBm

IM3

NJG1133MD7

- 49 -


Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


6

8

10

12

14

16

18

20

22

1.83 1.84 1.85 1.86 1.87 1.88 1.89

1.7GHz @ Low Gain


frequency (GHz)

P-1dB(IN)

P-1dB(IN) (dBm)

8

9

10

11

12

13

14

15

16

1.8 1.82 1.84 1.86 1.88 1.9

1.7GHz @Low Gain


10

11

12

13

14

15

16

17

18

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

NJG1133MD7

- 50 -


Condition

Ta=+25,

f=1860MHz,


Condition

Ta=+25,

f1=1860MHz, f2=f1+100kHz,

Pin=-16dBm,


Condition

Ta=+25,

f=1860MHz,


Condition

Ta=+25,

f=1860MHz,


-6

-5

-4

-3

-2

-1

0

1

2

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.7GHz @Low Gain

Gain, NF vs. VDD

-2

-1

0

1

2

3

4

5

6

VDD (V)

Gain

Gain (dB)

NF

NF (dB)

8

9

10

11

12

13

14

15

16

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.7GHz @Low Gain

OIP3, IIP3 vs. VDD

9

10

11

12

13

14

15

16

17

VDD (V)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

12

13

14

15

16

17

18

19

20

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.7GHz @Low Gain

P-1dB(IN) vs. VDD

VDD (V)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.7GHz @Low Gain

VSWR vs. VDD

VSWRiVSWRo

VDD (V)

VSWR

NJG1133MD7

- 51 -


Condition

Ta=+25,

RF=OFF,


25

30

35

40

45

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.7GHz @Low Gain

IDD vs. VDD

VDD (V)

IDD

IDD (uA)

NJG1133MD7

- 52 -


-9

-8

-7

-6

-5

-4

-3

-2

-1

-60 -40 -20 0 20 40 60 80 100

1.7GHz @Low Gain

Gain, NF vs. Temperature(f=1860MHz, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V)

2

3

4

5

6

7

8

9

10

Temperature (oC)

Gain

Gain (dB)

NF

NF (dB)


4

5

6

7

8

9

10

11

12

13

-60 -40 -20 0 20 40 60 80 100

1.7GHz @Low Gain

OIP3, IIP3 vs. Temperature(f=1860+1860.1MHz, Pin=-16dBm, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V)

10

11

12

13

14

15

16

17

18

19

Temperature (oC)

OIP3

OIP3 (dBm)

IIP3 (dBm)

IIP3

6

8

10

12

14

16

18

20

-60 -40 -20 0 20 40 60 80 100

1.7GHz @Low Gain

P-1dB(IN) vs. Temperature(f=1860MHz, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V)

Temperature (oC)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

-60 -40 -20 0 20 40 60 80 100

1.7GHz @Low Gain

VSWRi, VSWRo vs. Temperature(f=1860MHz, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V)

VSWRiVSWRo

Temperature (oC)

VSWR

NJG1133MD7

- 53 -


0

10

20

30

40

50

-60 -40 -20 0 20 40 60 80 100

1.7GHz @Low Gain

IDD vs. Temperature(VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V, RF=OFF)

Temperature (oC)

IDD

IDD (uA)

NJG1133MD7

- 54 -


Condition：Ta=+25, VDD= 2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V

NJG1133MD7

- 55 -


Condition：Ta=+25, VDD= VINV =2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V

0

5

10

15

20

0 5 10 15 20

1.7GHz @Low Gain


frequency (GHz)

k factor

NJG1133MD7

- 56 -


Condition

Ta=+25,

VDD= 2.7V,

VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


0

5

10

15

20

-40 -30 -20 -10 0 10

1.5GHz @High Gain


0

2

4

6

8

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=-9.8dBm

IDD (mA)

IDD

-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

1.5GHz @High Gain


Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=-9.8dBm

0

0.5

1

1.5

2

2.5

3

3.5

4

1.4 1.45 1.5 1.55 1.6 1.65 1.7

1.5GHz @High Gain


4

6

8

10

12

14

16

18

20

Gain (dB)

frequency (GHz)

Gain

NF

NF (dB)


-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

1.5GHz @High Gain


Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=-0.3dBm

IM3

NJG1133MD7

- 57 -


Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


-18

-16

-14

-12

-10

-8

-6

-4

1.46 1.47 1.48 1.49 1.5 1.51 1.52

1.5GHz @High Gain


frequency (GHz)

P-1dB(IN)

P-1dB(IN) (dBm)

6

8

10

12

14

16

18

20

22

1.45 1.475 1.5 1.525 1.55

1.5GHz @High Gain


-4

-2

0

2

4

6

8

10

12

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

NJG1133MD7

- 58 -


Condition

Ta=+25,

f=1495MHz,


Condition

Ta=+25,

f1=1495MHz, f2=f1+100kHz,

Pin=-30dBm,


Condition

Ta=+25,

f=1495MHz,


Condition

Ta=+25,

f=1495MHz,


10

11

12

13

14

15

16

17

18

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.5GHz @High Gain

Gain, NF vs. VDD

0

0.5

1

1.5

2

2.5

3

3.5

4

VDD (V)

Gain

Gain (dB)

NF

NF (dB)

11

12

13

14

15

16

17

18

19

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.5GHz @High Gain

OIP3, IIP3 vs. VDD

-3

-2

-1

0

1

2

3

4

5

VDD (V)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

-10

-9

-8

-7

-6

-5

-4

-3

-2

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.5GHz @High Gain

P-1dB(IN) vs. VDD

VDD (V)

P-1dB(IN)P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.5GHz @High Gain

VSWR vs. VDD

VSWRiVSWRo

VDD (V)

VSWR

NJG1133MD7

- 59 -


Condition

Ta=+25,

RF=OFF


0

0.5

1

1.5

2

2.5

3

3.5

4

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.5GHz @High Gain

IDD vs. VDD

VDD (V)

IDD

IDD (mA)

NJG1133MD7

- 60 -


11

12

13

14

15

16

17

18

19

-60 -40 -20 0 20 40 60 80 100

1.5GHz @High Gain

Gain, NF vs. Temperature(f=1495MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V)

0

0.5

1

1.5

2

2.5

3

3.5

4

Temperature (oC)

Gain

Gain (dB)

NF

NF (dB)


7

8

9

10

11

12

13

14

15

16

17

-60 -40 -20 0 20 40 60 80 100

1.5GHz @High Gain

OIP3H1, IIP3H1 vs. Temperature(f=1495+1495.1MHz, Pin=-30dBm, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V)

-6

-5

-4

-3

-2

-1

0

1

2

3

4

Temperature (oC)

OIP3H1

OIP3H1 (dBm)

IIP3H1 (dBm)

IIP3H1

-18

-16

-14

-12

-10

-8

-6

-4

-60 -40 -20 0 20 40 60 80 100

1.5GHz @High Gain

P-1dB(IN) vs. Temperature(f=1495MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V)

Temperature (oC)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

-60 -40 -20 0 20 40 60 80 100

1.5GHz @High Gain

VSWRi, VSWRo vs. Temperature(f=1495MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V)

VSWRiVSWRo

Temperature (oC)

VSWR

NJG1133MD7

- 61 -

ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode) 0

1

2

3

4

5

-60 -40 -20 0 20 40 60 80 100

1.5GHz @High Gain

IDD vs. Temperature(VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V, RF=OFF)

Temperature (oC)

IDD

IDD (mA)

NJG1133MD7

- 62 -


Condition：Ta=+25, VDD= 2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

NJG1133MD7

- 63 -


Condition：Ta=+25, VDD= 2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

0

5

10

15

20

0 5 10 15 20

1.5GHz @High Gain


frequency (GHz)

k factor

NJG1133MD7

- 64 -


Condition

Ta=+25,

VDD= 2.7V,

VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

1.5GHz @Low Gain


Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=+16.0dBm

-12

-10

-8

-6

-4

-2

0

-40 -30 -20 -10 0 10 20

1.5GHz @Low Gain


25

30

35

40

45

50

55

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=+16.0dBm

IDD (uA)

IDD

0

2

4

6

8

10

12

14

1.4 1.45 1.5 1.55 1.6 1.65 1.7

1.5GHz @Low Gain


-14

-12

-10

-8

-6

-4

-2

0

Gain (dB)

frequency (GHz)

Gain

NF

NF (dB)


-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

1.5GHz @Low Gain


Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=+14.4dBm

IM3

NJG1133MD7

- 65 -


Condition

Ta=+25,

VDD= 2.7V,


Condition

Ta=+25,

VDD= 2.7V,


6

8

10

12

14

16

18

20

22

1.46 1.47 1.48 1.49 1.5 1.51 1.52

1.5GHz @Low Gain


frequency (GHz)

P-1dB(IN)

P-1dB(IN) (dBm)

2

4

6

8

10

12

14

16

1.45 1.475 1.5 1.525 1.55

1.5GHz @Low Gain


12

14

16

18

20

22

24

26

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

NJG1133MD7

- 66 -


Condition

Ta=+25,

f=1495MHz,


Condition

Ta=+25,

f1=1495MHz, f2=f1+100kHz,

Pin=-16dBm,


Condition

Ta=+25,

f=1495MHz,


Condition

Ta=+25,

f=1495MHz,


-6

-5

-4

-3

-2

-1

0

1

2

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.5GHz @Low Gain

Gain, NF vs. VDD

-2

-1

0

1

2

3

4

5

6

VDD (V)

Gain

Gain (dB)

NF

NF (dB)

8

9

10

11

12

13

14

15

16

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.5GHz @Low Gain

OIP3, IIP3 vs. VDD

9

10

11

12

13

14

15

16

17

VDD (V)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

12

13

14

15

16

17

18

19

20

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.5GHz @Low Gain

P-1dB(IN) vs. VDD

VDD (V)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.5GHz @Low Gain

VSWR vs. VDD

VSWRiVSWRo

VDD (V)

VSWR

NJG1133MD7

- 67 -


Condition

Ta=+25,

RF=OFF,


25

30

35

40

45

2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

1.5GHz @Low Gain

IDD vs. VDD

VDD (V)

IDD

IDD (uA)

NJG1133MD7

- 68 -


-9

-8

-7

-6

-5

-4

-3

-2

-1

-60 -40 -20 0 20 40 60 80 100

1.5GHz @Low Gain

Gain, NF vs. Temperature(f=1495MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V)

2

3

4

5

6

7

8

9

10

Temperature (oC)

Gain

Gain (dB)

NF

NF (dB)


4

5

6

7

8

9

10

11

12

13

-60 -40 -20 0 20 40 60 80 100

1.5GHz @Low Gain

OIP3, IIP3 vs. Temperature(f=1495+1495.1MHz, Pin=-16dBm, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V)

10

11

12

13

14

15

16

17

18

19

Temperature (oC)

OIP3

OIP3 (dBm)

IIP3 (dBm)

IIP3

6

8

10

12

14

16

18

20

-60 -40 -20 0 20 40 60 80 100

1.5GHz @Low Gain

P-1dB(IN) vs. Temperature(f=1495MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V)

Temperature (oC)

P-1dB(IN)

P-1dB(IN) (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

-60 -40 -20 0 20 40 60 80 100

1.5GHz @Low Gain

VSWRi, VSWRo vs. Temperature(f=1495MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V)

VSWRiVSWRo

Temperature (oC)

VSWR

NJG1133MD7

- 69 -

ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode) 0

10

20

30

40

50

-60 -40 -20 0 20 40 60 80 100

1.5GHz @Low Gain

IDD vs. Temperature(VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V, RF=OFF)

Temperature (oC)

IDD

IDD (uA)

NJG1133MD7

- 70 -


Condition：Ta=+25, VDD= 2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

NJG1133MD7

- 71 -


Condition：Ta=+25, VDD= VINV =2.7V, VCTL1=1.8V, VCTL2=1.85V, VCTL3=0V

0

5

10

15

20

0 5 10 15 20

1.5GHz @Low Gain


frequency (GHz)

k factor

NJG1133MD7

- 72 -

APPLICATION CIRCUIT 1（2.1GHz/800MHz/1.7GHz Band）

PARTS LIST

PRECAUTIONS

1) Please locate bypass capacitor C3 proximity to inductor L3 and L6.

2) Please locate bypass capacitor C5 proximity to inductor L9.

3) Ground terminal should be connected with the ground plane as short as possible.

Parts ID Notes

L1, L2, L4 ~L9 MURATA（LQP03T）0603 Size

L3 TDK（MLK0603）0603 Size

C1~C5 MURATA（GRM03）0603 Size

13

RFIN2

RFIN1 RFOUT2

GND

VCTL2

VCTL3

VCTL1

Logic

Circuit

RFOUT3

RFIN3

RFOUT1

1.7GHz Band

(1.5GHz Band)Bias

Circuit

Bias

Circuit

Bias

Circuit

GND

2.1GHz Band

800MHz Band

6

5

7

14

12

13

GND2 41 3

10 811 9GNDGND

(Top View)

RF OUT3 (1.7GHz)

RF OUT1 (800MHz)

RF OUT2 (2.1GHz)

VDD

VCTL1 (Band Sel1)

VCTL2 (Band Sel2)

VCTL3 (RX ATT)

RF IN3 (1.7GHz)

RF IN2 (2.1GHz)

RF IN1 (800MHz)

L1

12nH

L2

8.2nH

L3

10nH

L4

2.4nH

L5

1.6nH

L6

2.4nH

L7

3.3nH

L8

1.1nH

L9

3.0nH

C1

2pF

C4

2pF

C2

2pF

C3

0.01uF

C5

0.01uF

NJG1133MD7

- 73 -

APPLICATION CIRCUIT 2（2.1GHz/800MHz/1.5GHz Band）

PARTS LIST

PRECAUTIONS

1) Please locate bypass capacitor C3 proximity to inductor L3 and L6.

2) Please locate bypass capacitor C5 proximity to inductor L9.

3) Ground terminal should be connected with the ground plane as short as possible.

Parts ID Notes

L1, L2, L4 ~L9 MURATA（LQP03T）0603 Size

L3 TDK（MLK0603）0603 Size

C1~C5 MURATA（GRM03）0603 Size

13

RFIN2

RFIN1 RFOUT2

GND

VCTL2

VCTL3

VCTL1

Logic

Circuit

RFOUT3

RFIN3

RFOUT1

1.7GHz Band

(1.5GHz Band)Bias

Circuit

Bias

Circuit

Bias

Circuit

GND

2.1GHz Band

800MHz Band

6

5

7

14

12

13

GND2 41 3

10 811 9GNDGND

(Top View)

RF OUT3 (1.5GHz)

RF OUT1 (800MHz)

RF OUT2 (2.1GHz)

VDD

VCTL1 (Band Sel1)

VCTL2 (Band Sel2)

VCTL3 (RX ATT)

RF IN3 (1.5GHz)

RF IN2 (2.1GHz)

RF IN1 (800MHz)

L1

12nH

L2

8.2nH

L3

10nH

L4

2.4nH

L5

1.6nH

L6

2.4nH

L7

3.9nH

L8

3.6nH

L9

5.1nH

C1

2pF

C4

1.5pF

C2

2pF

C3

0.01uF

C5

0.01uF

NJG1133MD7

- 74 -

TEST PCB LAYOUT

PCB (FR-4):

t=0.2mm

MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm)

PCB SIZE=35.4mm x 17.0mm

(Top View)

RF IN2 (2.1GHz)

VDD

VCTL1

RF IN1 (800MHz)

RF OUT1 (800MHz)

RF OUT3 (1.7/1.5GHz)

VCTL2

RF IN3 (1.7G/1.5GHz)

VCTL3

RF OUT2 (2.1GHz)

VDD

L1

L2

L3 L5

L4

L6 L8

L7

L9

C1

C2

C3

C5 C4

NJG1133MD7

- 75 -

PACKAGE OUTLINE (EQFN14-D7)

Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material.

• Do NOT eat or put into mouth.

• Do NOT dispose in fire or break up this product.

• Do NOT chemically make gas or powder with this product.

• To waste this product, please obey the relating law of your country.

This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages.

[CAUTION] The specifications on this databook are

only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages

Details of"A" part（×２）

B

φ0.05 SM AB

C0.1

"A"

0.05 S

3-R0.2

A

S

0.075 S

R0.06 2-R0.08

2-R0.06

C0.1

R0.03

1.6±0.051.6±

0.0

5

0.3

97±

0.0

3

0.0

10

min0

.15

0.74

＋0.07

－0.03

0.21±

0.1

0

0.21±0.1

0.18 －0.04＋0.06

0.2

0.4

0.11

0.075

0.0

5

0.176

＋0.010

－0.008

UNIT：mm

SUBSTRATE MATERIAL：Copper

TERMINAL FINISH：Sn-Bi plating

MOLD MATERIAL：Epoxy resin

MASS（TYP.）：0.0034（g）

Documents

NJG1133MD7 UMTS Triple Band LNA GaAs MMIC · 2019-07-31 · NJG1133MD7 Ver.2013-04-23 - 1 - UMTS Triple Band LNA GaAs MMIC GENERAL DISCRIPTION PACKAGE OUTLINE NJG1133MD7 is a triple