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Novel EUV resist materialsNovel EUV resist materialsfor N7 and beyondfor N7 and beyond
TORU FUJIMORIHideaki Tsubaki, Hajime Furutani, Wataru Nihashi, Michihiro
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016Page Page 11
Hideaki Tsubaki, Hajime Furutani, Wataru Nihashi, Michihiro Shirakawa, Hidenori Takahashi and Fumiyuki Nishiyama
FUJIFILM Corporation
Page 2
Introduction
EUV lithography will used for HVM, soon. However, still so many issues to install the manufacturing.
For N7 ? N5 ? N4/N3 ?↑ !!
Required CD size will be more tighten.
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
Concern; The limitation of CAR’s performance !
New chemistry and new resist materials will be strongly required .
Page 3
Re
so
lutio
n
Poor
Metal resist
(Cornell univ.)
CAR NTI (Negative-tone)
Metal resist
(EIDEC)
Background
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
Sensitivity
Re
so
lutio
n
High
High Low
Target !
CAR PTD (Positive-tone)
Metal resist
(Inpria)
CAR NTI (Negative-tone)
Trade-off line
Page 4
Introduction
EUV lithography will used for HVM, soon. However, still so many issues to install the manufacturing.
For N7 ? N5 ? N4/N3 ?↑ !!
Required CD size will be more tighten.
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
Concern; The limitation of CAR’s performance !
New chemistry and new resist materials will be strongly required .
However, CAR materials still has the potential,especially, ‘Negative-tone Imaging’ .
Page 5
Agenda
• Background
• CAR extension
CAR materials for Negative-tone imaging (NTI)
Why ? What is the advantages ?
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
Why ? What is the advantages ?
• Performance progress
Page 6
40
28
Background
• Continuous shrinkage
• High throughput demanding
ITRS 2013
Logic M1, Half pitch
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
20
16
13
10
7
2013 2015 2017 2019 2021 2023 2024
Novel, but industry friendly material for “Res./throughput”
Page 7
Technology challenge: Throughput ⇔⇔⇔⇔ quality
Throughput = “High Sensitivity”F
ilm
th
ick
ne
ss
[Q] = 2 vs. PAG[Q] 1[Q] 0 [Q] 0.5
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
High throughput is easily obtainable by decreasing [Q].
Exposure dose
Fil
m t
hic
kn
ess
101
Real challenge is to maintain contrast/resolution
Page 8
Background
Process flow
Coat Bake ( Reaction ) Development Dissolving unitDissolving unit
& exp.
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
EUV Exposure
PTDTMAH aq.
NTI Organic solvent
Exposed areadeveloped
Non-exposed area developed
Page 9
Development behaviorBy using in situ High Speed-AFM
Positive-tone Negative-toneDevelopmentTime 0 sec.
Swelling
No swelling Dissolving
Development behavior PTD vs. NTI
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
Dissolving
Negative-tone: No swelling, Dissolving smoothly
T. Fujimori et.al., International Symposium on Semi conductor Manufacturing 2014
Page 10
Why NTI? -materials viewpoint
Resolution
L
14 nm • Non swelling
• Min. capillary force
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
LWR
Sensitivity
Throughput
Faster
Smooth
16nm
14nm
20mJ 35mJSensitivity
Resolution
PTI
NTI
Page 11
Typical example PTD vs. NTI
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
N1434Bf
Exposed with EUV light on SFET (NA=0.30)
T. Fujimori et.al., 2013 International symposium on Extreme Ultraviolet Lithography
Page 12
NTI Resist A1
High potential for sensitivity
NTI Resist A2
CAR Negative -tone Imaging
13 mJ 9 mJ
Potential performance of NTI
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016 • 1T. Fujimori et.al., 2014 International symposium on Extreme Ultraviolet Lithography
LWR=3.8nm
Exposed with NXE 3100 (NA=0.25)22nm hp
LWR=4.0nm 26nm hp
Page 13
Performance benefits of NTI
Resolution
LWR
14 nm
4.8nm, PTI 3.0nm, NTI ※45nm
40 nm FT @NXE:3300
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
LWR
Sensitivity
Throughput
37mJ Now, sensitizer design
Smooth
EUV
e－e－
e－
e－
e－
e－
H+
PAG
Page 14
NTI favorable approach: block mask
“Block mask” for 1D layout to print logic metal layer
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
EUV-NTI is attractive approach for “Block mask”
1D ArFi Grating Dot printing = NTI is favorable- Dark mask (mask defect/flare)
- No inversion process+ EUV Block
Page 15
55
60
65
DoseDose (mJ/cm2)
NTI Process
NXE:3300 (NA 0.33, Dedicated ill.) , PR thick. 40nm on UL,
Dose to size: 49.1 mJ/cm2DOF at 10% EL: 90 nmDOF at dose to size: 90 nmMax. EL: 19.8%
Key progress: 21 nm Block
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
40
45
50
-60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60
Focus
F 0.75E 49.14
26P44dots26P44dots_gen
21x50 nm CH (XY) printed as 21 (CD-X) nm pillar 21 nm trench (CD-X) printed as 21 (CD-X) nm line Generic window 21x50 nm CH (XY) printed as pillarGeneric window 21nm trench (CD-X) printed as line
Promising block mask printability, but dose is still high
Page 16
24
26
28
30R
eso
luti
on
(n
m)
Dot
Dot Bar
49 mJ27mJ18mJ
Sensitivity improvement
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
14
16
18
20
22
24
0 20 40 60
Sensitivity (mJ/cm2)
Re
solu
tio
n (
nm
)
Dot
Bar
Block by NTI maintain resolution on sensitivity 18mJ/cm2
Target 21 nm
Page 17
NXE:3300 @EUV-NTI process
Prototype photo-resist
14nm CD block HP 13nm L/S
Limitations
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
Major limitation is collapse and bridge
Cross section
Page 18
(b) Short acid diffusion
High contrast resistby suppressing
“acid diffusion”
(a) Long acid diffusion
Resist material design: acid diffusion
EUV-NTI Process
NXE:3300 (NA 0.33, Dedicated ill.)
PR thick. 40nm on UL
NEW resist (short diffusion)Conventional (long diffusion)
H+ H+
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
(a) Long acid diffusion
A short acid diffusion actually has a benefit on PW
Page 19
18
20
22
24
26M
inim
um
do
t C
D (
nm
) P44
P62
P182
“Acid diffusion length∝∝∝∝ Exposure latitude”
�
Correlation between acid diffusion & resolution
H+ H+
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
10
12
14
16
16 18 20 22 24 26 28 30
EL (%)
Min
imu
m d
ot
CD
(n
m)
☺
Acid diffusion is major contributor on resolution
“CAR still has a potential for EUVL”
H H
Page 20
Resist material design: organic EUV sensitizer
EUV Absorption coefficient per atom
Ab
sorp
tio
n c
oe
ffic
ien
t
(no
rma
lize
d b
y c
arb
on
)
EUV
ee
e－
e－
e－
e－
H+
PAG
Role 2)
Electron transfer to PAG
25
30
35
40
45
50
� Organic atom
Not only for Negative-tone imaging.
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
“Organic atom” still has a potential as EUV sensitizer.J.J. Yeh, et al. Atomic Data and Nuclear Data Tables, 32, 1-155 (1985)
*C：0.65 Mbarn
Atomic number
Ab
sorp
tio
n c
oe
ffic
ien
t
(no
rma
lize
d b
y c
arb
on
)
e－e－
Role 1) EUV absorption
“EUV Sensitizer”
0
5
10
15
20
25
0 20 40
Carbon
Page 21
Summary
CAR-NTI
T. Fujimori, ISSM 2014, PO-O-042 (2014)
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
Res.:
Sensitivity:
14 nm L/S
37 mJ/cm2
“NTI for EUV” beyond limitation of PTI !!
21 nm Block
18 mJ/cm2
Page 22
• We’d like to thank imec for the EUV exposure
using a NXE:3300.
Acknowledgement
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
Page 23
February 25, 20132016 International Symposium on Extreme Ultraviolet Lithography, Oct 24th- 26th , 2016
