NPA1008 IN Match Input RF 43 15 16 RFOUT / VD GaN Wideband ... · GaN Wideband Power Amplifier, 28 V, 5 W 20 - 2700 MHz Rev. V3 NPA1008 3 M/A-COM Technology Solutions Inc. (MACOM)

GaN on Silicon Power Amplifier 20 - 2700 MHz, 28 V, 5 W

Rev. V4

NPA1008

1 1

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.

For further information and support please visit: https://www.macom.com/support

DC-0007593

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Features

GaN on Si HEMT D-Mode Integrated Amplifier

Suitable for Linear & Saturated Applications

Broadband Operation from 20 - 2700 MHz

50 Ω Input Matched

28 V Operation

45% Drain Efficiency

100% RF Tested

Lead-Free 4 mm 24-lead PQFN Package

Halogen-Free “Green” Mold Compound

RoHS* Compliant

Description

The NPA1008 is an integrated GaN on silicon power amplifier optimized for 20 - 2700 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 x 4 mm 24-lead QFN plastic package. The NPA1008 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure.

Ordering Information

Part Number Package

NPA1008 Bulk Quantity

NPA1008-SMB Sample Board

Functional Schematic

Pin Designations

1. All no connection pins may be left floating or grounded. 2. The exposed pad centered on the package bottom must be

connected to RF and DC ground. This path must also provide a low thermal resistance heat path.

Pin # Pin Name Function

1 VG Gate - DC Bias

2 N/C1 No Connection

3,4 RFIN RF Input

5-14 N/C1 No Connection

15,16 RFOUT / VD RF Output / Drain

17-24 N/C1 No Connection

25 Paddle2 Ground / Source

VG

Input

Match

RFIN

RFIN

N/C

N/C

N/C

121110987

6

5

4

3

2

1 N/C

RFOUT / VD

RFOUT / VD

N/C

N/C

N/C

13

14

15

16

17

18

N/C N/C N/C N/C N/C N/C

192021222324

N/C N/C N/C N/C N/C N/C

25

Paddle

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

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DC Electrical Specifications: TC = 25°C

RF Electrical Specifications: TC = 25°C , VDS = 28 V, IDQ = 88 mA

Parameter Test Conditions Symbol Min. Typ. Max. Units

Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK - 4 - mA

Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - 2 - mA

Gate Threshold Voltage VDS = 28 V, ID = 4 mA VT -2.5 -1.5 -0.5 V

Gate Quiescent Voltage VDS = 28 V, ID = 88 mA VGSQ -2.1 -1.2 -0.3 V

On Resistance VDS = 2 V, ID = 45 mA RON - 1.2 - Ω

Saturated Drain Current VDS = 7 V pulsed, pulse width 300 µs ID(SAT) - 2.3 - A

Parameter Test Conditions Symbol Min. Typ. Max. Units

Small Signal Gain CW, 1900 MHz GSS - 15.6 - dB

Gain CW, POUT = 37 dBm, 1900 MHz GP 10.5 12.0 - dB

Saturated Output Power CW, 1900 MHz PSAT - 38.9 - dBm

Drain Efficiency CW, 1900 MHz ηSAT 44 47.0 - %

Power Added Efficiency CW, POUT = 37 dBm, 1900 MHz PAE - 44.7 - %

Ruggedness All phase angles VSWR = 15:1, No Device Damage




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Absolute Maximum Ratings3,4,5

3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.

Handling Procedures

Please observe the following precautions to avoid damage:

Static Sensitivity

Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1B devices.

Parameter Absolute Maximum

Drain Source Voltage, VDS 100 V

Gate Source Voltage, VGS -10 to 3 V

Gate Current, IG 12 mA

Junction Temperature, TJ +200°C

Operating Temperature -40°C to +85°C

Storage Temperature -65°C to +150°C

ESD Min. - Human Body Model (HBM) +350 V

6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink.

7. The thermal resistance of the mounting configuration must be added to the device ӨJC , for proper TJ calculation during operation. The recommended via pattern, shown on page 4, on a 20 mil thick, 1 oz plated copper, PCB adds an additional 4 °C/W to the typical value.

Parameter Test Conditions Symbol Typical Units

Thermal Resistance VDS = 28 V, TJ =200°C ӨJC 12.1 °C/W

Thermal Characteristics6,7




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Description Parts measured on evaluation board (20-mil thick RO4350). The PCB’s electrical and thermal ground is provided using a standard-plated densely packed via hole array (see recommended via pattern). Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page.

Bias Sequencing Turning the device ON

1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (28 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level.

Turning the device OFF

1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS.

Recommended Via Pattern (All dimensions shown as inches)

Evaluation Board and Recommended Tuning Solution

20 - 2700 MHz Broadband Circuit

C3

10 mF

VGS

NPA1008

C2

2400 pFRF

OutC1

2400 pF

RF

In

R1

470 W

L4

1.5 nH

L3

2.2 nH

C8

0.6 pF

VDS

C4

4.7 mF

L2

0.9 mH

C6

0.8 pF

C5

0.6 pF

C7

0.5 pF

C9

1000 pF

L1

0.9 mH




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Reference Value Tolerance Manufacturer Part Number

C1, C2 2400 pF - Dielectric Labs, Inc. C08BL242X-5UN-X0

C3 10 µF 10% TDK C2012XR1C106M085AC

C4 4.7 µF 10% TDK C5750X7R2A475K230KA

C5, C8 0.6 pF 0.1 pF ATC 800A0R6BT250X

C6 0.8 pF 0.1 pF ATC 800A0R8BT250X

C7 0.5 pF 0.1 pF ATC 800A0R5BT250X

C9 1000 pF 10% Kemet C0805C102K1RACTU

R1 470 Ω 10% Panasonic ERJ-P03F4700V

L1, L2 0.9 µH 10% Coilcraft 1008AF-901XJLC

L3 2.2 nH ±0.2 nH AVX L08052R2CEW

L4 1.5 nH ±0.2 nH AVX L06031R5CGS

PCB Rogers RO4350, r=3.5, 0.020”

Parts list

Evaluation Board and Recommended Tuning Solution

20 - 2700 MHz Broadband Circuit

RFIN RFOUT

VGS VDS




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Device s-parameters (Deembedded)

Performance vs. Input Return Loss at POUT = 37 dBm

Broadband Circuit s-Parameters

Performance vs. Frequency at POUT = 37 dBm

Typical Performance as measured in the Broadband Evaluation Board: CW, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)

0

5

10

15

20

25

-25

-20

-15

-10

-5

0

0 0.5 1 1.5 2 2.5 3

Gain

IRL

Gain

(dB

)

Input R

etu

rn L

oss (d

B)

Frequency (GHz)

10

11

12

13

14

15

20

30

40

50

60

70

0 0.5 1 1.5 2 2.5 3

Gain

PAE

Gain

(dB

)

Pow

er A

dded E

fficie

ncy (%

)

Frequency (GHz)

0

5

10

15

20

-20

-15

-10

-5

0

0 0.5 1 1.5 2 2.5 3

S21

S11

S22

s2

1 (

dB

)

s1

1 , s2

2 (dB

)

Frequency (GHz)

0

5

10

15

20

-20

-15

-10

-5

0

0 0.5 1 1.5 2 2.5 3

S21

S11

S22

s2

1 (

dB

)

s1

1 , s2

2 (dB

)

Frequency (GHz)




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Input Return Loss vs. Frequency Input Return Loss at POUT = 37 dBm vs. Frequency

Gain vs. Frequency at POUT = 37 dBm

Power Added Efficiency at POUT = 37 dBm vs. Frequency

Gain vs. Frequency

Power Added Efficiency vs. Frequency


10

11

12

13

14

15

16

17

0 0.5 1 1.5 2 2.5 3

POUT = 24dBm

POUT = 36dBm

POUT = 37dBm

Gain

(d

B)

Frequency (GHz)

-20

-18

-16

-14

-12

-10

-8

-6

0 0.5 1 1.5 2 2.5 3

POUT = 24dBm

POUT = 36dBm

POUT = 37dBm

Inpu

t R

etu

rn L

oss (

dB

)

Frequency (GHz)

0

10

20

30

40

50

60

0 0.5 1 1.5 2 2.5 3

POUT = 24dBm

POUT = 36dBm

POUT = 37dBm

Po

wer

Ad

de

d E

ffic

ien

cy (

%)

Frequency (GHz)

8

9

10

11

12

13

14

15

16

0 0.5 1 1.5 2 2.5 3

-40°C

+25°C

+85°C

Gain

(dB

)Frequency (GHz)

-16

-14

-12

-10

-8

-6

0 0.5 1 1.5 2 2.5 3

-40°C

+25°C

+85°C

Input R

etu

rn L

oss (

dB

)

Frequency (GHz)

30

35

40

45

50

55

60

0 0.5 1 1.5 2 2.5 3

-40°C

+25°C

+85°C

Po

wer

Ad

de

d E

ffic

ien

cy (

%)

Frequency (GHz)




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Gain vs. POUT

Input Return Loss vs. POUT


Power Added Efficiency vs. POUT

Gain vs. POUT

8.0

10

12

14

16

18

20 25 30 35 40

1500MHz

1900MHz

2400MHz

2700MHz

Gain

(dB

)P

OUT (dBm)

Input Return Loss vs. POUT

Power Added Efficiency vs. POUT

0

10

20

30

40

50

60

70

80

10 15 20 25 30 35 40 45

100MHz

500MHz

900MHz

Pow

er

Added

Eff

icie

ncy (

%)

POUT

(dBm)

8

10

12

14

16

18

20 25 30 35 40

100MHz

500MHz

900MHz

Gain

(dB

)

POUT

(dBm)

0

10

20

30

40

50

60

20 25 30 35 40

1500MHz

1900MHz

2400MHz

2700MHz

Pow

er

Added

Eff

icie

ncy (

%)

POUT

(dBm)

-20

-18

-16

-14

-12

-10

-8

20 25 30 35 40

100MHz

500MHz

900MHzInput

Retu

rn L

oss (

dB

)

POUT

(dBm)

-20

-18

-16

-14

-12

-10

-8

20 25 30 35 40

1500MHz

1900MHz

2400MHz

2700MHz

Input

Retu

rn L

oss (

dB

)

POUT

(dBm)




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2-Tone IMD vs. Output Power vs. IDQ

2-Tone IMD vs. Output Power

2-Tone Gain vs. Output Power vs. IDQ

2-Tone IMD vs. Tone Spacing (POUT = 37 dBm-PEP)

Typical 2-Tone Performance as measured in the Broadband Evaluation Board 1 MHz Tone Spacing, Freq = 1900 MHz, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)

-50

-45

-40

-35

-30

-25

-20

-15

-10

0.1 1 10 100

-IMD3

+IMD3

-IMD5

+IMD5

-IMD7

+IMD7

IMD

(d

Bc)

Tone Spacing (MHz)

-60

-50

-40

-30

-20

-10

0.01 0.1 1 10

-IMD3

+IMD3

-IMD5

+IMD5

-IMD7

+IMD7

IMD

(d

Bc)

POUT

(W-PEP)

10

-50

-45

-40

-35

-30

-25

-20

-15

0.01 0.1 1 10

48mA

68mA

88mA

108mA

128mA

IMD

3 (

dB

c)

POUT

(W-PEP)

10

11

12

13

14

15

16

17

0.01 0.1 1 10

48mA

68mA

88mA

108mA

128mA

Gain

(dB

)P

OUT (W-PEP)

Quiescent VGS vs. Temperature

-1.5

-1.4

-1.3

-1.2

-1.1

-1.0

-0.90

-0.80

-0.70

-50 -25 0 25 50 75 100

48mA

88mA

148mA

VG

SQ (

V)

Temperature (oC)




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Lead-Free 4 mm 24-Lead QFN Plastic Package†

† Meets JEDEC moisture sensitivity level 3 requirements. Plating is Matte Tin.

All dimensions shown as inches [millimeters]




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MACOM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with MACOM Technology Solutions Inc ("MACOM")products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale.



Documents

NPA1008 IN Match Input RF 43 15 16 RFOUT / VD GaN Wideband ... · GaN Wideband Power Amplifier, 28 V, 5 W 20 - 2700 MHz Rev. V3 NPA1008 3 M/A-COM Technology Solutions Inc. (MACOM)