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NSTI-Nanotech 2005, , ISBN 0-9767985-3-0 …...The ACM model is the result of a fresh look at the problem of MOSFET compact modeling. It marries a physics-based approach with former
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Book4.1.pdf1243.pdf1243.pdfTwo-/three-dimensional GICCR for
Si/SiGe bipolar transistors1 Introduction2 Investigated Device
Structure3 Master Equation4 Model Equations5 Conclusion
Book4.3.pdf1410.pdf1410.pdfModeling of charge and collector
field in Si-based bipolar transistors1 Introduction2 Investigated
technology3 Modeling the electric field4 Base-collector depletion
capacitance5 Transit time6 Modeling velocity overshoot7
Conclusion
