© Semiconductor Components Industries, LLC, 2017

March, 2018 − Rev. 01 Publication Order Number:

NSFV4017SG4/D

NSVF4017SG4

RF Transistor for Low NoiseAmplifier

12 V, 100 mA, fT = 10 GHz typ.This RF transistor is designed for low noise amplifier applications.

MCPH package is suitable for use under high temperatureenvironment because it has superior heat radiation characteristics.This RF transistor is AEC−Q101 qualified and PPAP capable forautomotive applications.

Features• Low−noise Use: NF = 1.2 dB typ. (f = 1 GHz)

• High Cut−off Frequency: fT = 10 GHz typ. (VCE = 5 V)

• High Gain: |S21e|2 = 17 dB typ. (f = 1 GHz)

• MCPH4 Package is Pin−compatible with SC−82FL

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

Typical Applications• Low Noise Amplifier for Digital Radio

• Low Noise Amplifier for TV

• Low Noise Amplifier for FM Radio

• RF Amplifier for UHF Application

MAXIMUM RATINGS at TA = 25°C

Rating Symbol Value Unit

Collector to Base Voltage VCBO 20 V

Collector to Emitter Voltage VCEO 12 V

Emitter to Base Voltage VEBO 2 V

Collector Current IC 100 mA

Collector Dissipation PC 450 mW

Operating Junction and Storage Temper-ature

TJ, Tstg −55 to+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.

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SC−82FLMCPH4

CASE 419AR

MARKING DIAGRAM

GQ = Specific Device CodeXX = Lot Number

Device Package Shipping†

ORDERING INFORMATION

NSVF4015SG4T1G SC−82FL(Pb−Free)

3000 / Tape &Reel

†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011/D.

1

ELECTRICAL CONNECTIONNPN

4

1, 3

2

1: Emitter2: Collector3: Emitter4: Base

GQ

LOT

No.

LOT

No.

NSVF4017SG4

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Table 1. ELECTRICAL CHARACTERISTICS at TA = 25°C (Note 1)

Parameter Symbol Conditions

Value

UnitMin Typ Max

Collector Cutoff Current ICBO VCB = 5 V, IE = 0 A 1.0 �A

Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 A 1.0 �A

DC Current Gain hFE VCE = 5 V, IC = 50 mA 60 150

Gain−Bandwidth Product fT VCE = 5 V, IC = 30 mA 8 10 GHz

Forward Transfer Gain | S21e |2 VCE = 5 V, IC = 30 mA, f = 1 GHz 14 17 dB

Noise Figure NF VCE = 5 V, IC = 10 mA, f = 1 GHz 1.2 1.8 dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.1. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.

NSVF4017SG4

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TYPICAL CHARACTERISTICS

Collector−to−Base Voltage, VCB − V

Out

put C

apac

itanc

e, C

ob −

pF

Collector Current, IC − mA

DC

Cur

rent

Gai

n, h

FE

Collector−to−Emitter Voltage, VCE − V

Col

lect

or C

urre

nt, I

C −

mA

Base−to−Emitter Voltage, VBE − V

Col

lect

or C

urre

nt, I

C −

mA

Collector Current, IC − mA

Gai

n−B

andw

idth

Pro

duct

, fT

−−

GH

z

Collector−to−Base Voltage, VCB − V

Rev

erse

Tra

nsfe

r C

apac

itanc

e, C

re −

pF

0 0.2 0.4 0.6 0.8 1.00 121084 620

10

30

50

100

70

20

40

60

80

90

0

20

10

30

40

60

90

80

70

50

100

IB =0 A

100 A

2

3

5

7

2

3

5

7

100

10

1000

32 5 71.0 10 32 5 7 100

VCE=5V

VCE=5V

7

2

5

3

7

2

5

3

1.0

0.1

10

32 5 1000.1 7 32 5 71.0 32 5 7 10

f=1MHz

7

2

3

5

7

2

3

5

100

10

1.01.0 2 3 5 7 10 2 3 5 7 100

VCE=5Vf=1GHz

5

7

2

3

1.0

0.132 5 1000.1 7 32 5 71032 5 71.0

f=1MHz

200 A

300 A

400 A

500 A

600 A

700 A800 A

900 A1000 A

Figure 1. IC vs. VCE Figure 2. IC vs. VBE

Figure 3. hFE vs. IC Figure 4. Cob vs. VCB

Figure 5. Cre vs. VCB Figure 6. fT vs. IC

�

��

�

�

�

�

�

�

�

�

NSVF4017SG4

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TYPICAL CHARACTERISTICS

Figure 7. �S21e�2 vs. IC Figure 8. NF vs. IC

Figure 9. PC vs. TA

Collector Current, IC − mA

Noi

se F

igur

e, N

F−

dB

Ambient Temperature, Ta − �C

Col

lect

or D

issi

patio

n, P

C −

mW

Collector Current, IC − mA

Forw

ard

Tra

nsfe

r G

ain,

�S21

e�2 −

dB

00

20 40 60 80 100 120 140 160

450

400

500

350

250

300

150

50

200

100

25

20

15

10

5

01032 5 7 10032 5 71.0 1.0 102 73 5 2 73 5 100

0

3

1

2

6

8

4

5

7

9

10

Zs=50

VCE=5Vf=1GHz

VCE=5Vf=1GHz

Zs=Zsopt

�

NSVF4017SG4

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NSVF4017SG4

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NSVF4017SG4

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NSVF4017SG4

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NSVF4017SG4

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NSVF4017SG4

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SC−82FL / MCPH4CASE 419AR

ISSUE ODATE 30 DEC 2011

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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