Optical Navigation Divisionleos.unipv.it/slides/lecture/AgrestiPDF[1].pdf · 2009-11-23 · Datacom – telecom networks Pluggable solutions 10 Gb platforms and segmentation within

Optical Navigation Division

Transceivers and semiconductor lasers for photonic networks

12/06/2007

Michele AgrestiMichele Agresti

TTCTTC-- Avago Technologies ItalyAvago Technologies Italy

Torino, ITALYTorino, ITALY

Avago Technologies ConfidentialPresentation title herePage 2

FOPD

OutlineCompany overview

Laser sources for pluggable transceiver world


FOPD

Company Overview

Field/Order FulfillmentR&D FacilitiesManufacturingR&D and Manufacturing

Leading global manufacturer of analog, mixed signal and optoelectronics components

Headquarters: San Jose, California and Singapore

6,500 employees service over 40,000 customers worldwide

Over 1,000 analog designers with 2,000 patents and patent applications

Global presence in North America, Europe and Asia


FOPD

Recent story from HP to Agilent…and Avago

March 2, 1999HP announces creation of two independent companies

July 28, 1999Agilent’s name is introduced

November 18, 1999Agilent’s IPO takes place

June 2, 2000Agilent becomes fully independent

November 1, 1999Agilent starts operating as an independent company

Agilent

April 2000

TTC acquisition

1 December 2005

DAY 1Avago Technologies


FOPD

Company’s History� Avago Technologies dates back to the earliest days of Hewlett-Packard, the

component group in HP that developed technically differentiated components needed by HP’s systems

� In 1999, the group spun off from HP as the second largest business group of Agilent Technologies – named Semiconductor Products Group (SPG)

� In 2005, was acquired by Kohlberg Kravis Roberts & Co. (KKR) and Silver Lake Partners to become the world’s largest private owned semiconductor company

� Avago Technologies has a rich heritage in RF, mixed signal and optoelectronics innovation, and is the leader in many of its serviced markets


FOPD

Storage, Computing & NetworkingData storage

Servers

Storage arrays

Switches and routers

Service provider networking

MobileWireless handsets

Wireless infrastructure

Wireless networking

DigitalConsumerPrinters and imaging

Laser and optical mice

Digital TVs:

-LCD TVs

-Plasma TV’s

AutomotiveSafety

In-car infotainment

Navigation

Lighting

IndustrialFactory automation

Motor controls

Power generation

Serviced Markets


FOPD

Solutions for Storage, Computing and Networking

Networking ASICs Fiber OpticsPrinter ASICs, SOCs, Motion Control, Infrared, Optical Navigation


FOPD

OutlineIntroduction

Datacom – telecom networks

Pluggable solutions

10 Gb platforms and segmentation within the network

10 Gb devices and technologies for pluggable transceivers

Key design elements for high performances laser sources

Direct modulation of uncooled laser sources

Advanced laser sources for pluggable transceivers


FOPD

Long Haul

Metro

Storage Enterprise

DATACOM applicationa market which outperformed (vs. Telecom Market)

T E L ECOM application, single O�or WDMa market which start recovering

Private networksPublic networks

2-20 km 20-100 km

Today’s Network


FOPD

Size of the optical component market for datacom and telecom

47%

53%

DATACOM:SAN, LAN, Enterprise

T E L ECOM:Long Haul, Metro, PON..

Mostly T ransceivers Mostly discrete lasers, modulator, PD, Filters…., few transceivers


FOPD

T raditional components Pluggable transceiver approach

•Multiple compact modules per circuit card

•Pluggability: pay as you go

•One bulky, pigtailed, module per equipment circuit card

•Hand soldered assembly

Market is driving pluggable module solution

DATACOM and TELECOM trend: from discrete components to subsystems


FOPD

Optical coupling:Lens+Optical Isolator+Lens+pigtailed fiber

Chip laser

DATACOM and TELECOM trend: from discrete components to subsystemsButterfly Laser Module

Temperature control

Back detectorElectrical / RF connections


FOPD

~250 x 250 mm

LAMBDAPACK-2.5 DWDM Pluggable Transceiver- Integrated heatsink- Up to 8 modules side by side

~103 x 51 mm

Market is driving pluggable module solutionMarket is driving pluggable module solution

DATACOM and TELECOM trend: from discrete components to subsystems


FOPD

PLUGGABILITY

LASER SOURCESworking @

HIGH OPERATING TEMPERATURELOW POWER CONSUMPTION

butNO COMPROMISES FOR PERFORMANCES

Cost reduction route for optical components

Stable and reliable technological processesHigh Yield, high repeatability run-to-run

a technology ready for high volume/low cost production


FOPD

OutlineIntroduction


Pluggable solutions







FOPD

10 Gb VCSEL @ 850nm

10 Gb FP@ 1300 nm

10 Gb DFB@ 1300 nm

EAM

DFB

separation

ED08

10 Gb EML@ 1550 nm

Tunable@ 1550 nm


FOPD

XENPAK is the first 10G Ethernet transceiver-MSA date: March 2002-dimension: 121x53 mm-DATACOM

X2 is the next evolution to a smaller XAUI-based 10G Ethernet solution- MSA date: March 2003-dimension: 68x53 mm-DATACOM

XFP is the next generation platform with a 10Gbit/s serial: data agnostic

-MSA date: April 2003

-dimension: 78x18 mm

-DATACOM/TELECOM

10Gb platformsevolution


FOPDOutlineIntroduction


Pluggable solutions







FOPD

Semiconductor Lasers

19601960 19701970 19801980 19901990 20002000

GaAs-omojunction

GaAs/GaAlAs-eterojunction

InP/InGaAsP

Short wavelength -compact disk

High performance lasers for telecom Transceiver - datacom

downturn telecom market

1962, Semiconductor lasers:GE,MIT, IBM, Un. Illinois

1969, R.T. semiconductor lasers

1972, Bell Labs,paper onDFB (Distributed Feed-Back)

1976, MIT first 1 um laser

1984 laser for compact disk10.000.000 chp/year

1990, MQW laser

2000, uncooled laser

FOPD

Material systems for semiconductor lasers

FOPD

Carrier population generation Electrical injection

Cavity Crystal Mirrors (FP)or Grating (DFB – DBR)

Active material Semiconductor layer with optical gain

electrical Heterojunction

optical Optical waveguide

Semiconductor Laser is:

Confinements:

FOPD

Eg

n

p

b) eterogiunzione in assenza di polarizzazione

d) eterogiunzione in polarizzazione diretta

pn

livelllo diFermi

p

n

livelllo di Fermi

Eg

a) omogiunzione in assenza di polarizzazione

c) omogiunzione in polarizzazione diretta

p n

elettroni elettroni

lacune lacune

omojunctionomojunction heterojunctionheterojunction

Electrical confinement

FOPD

1 1.1 1.2 1.3 1.4 1.5 1.6 1.73.15

3.2

3.25

3.3

3.35

3.4

3.45

3.5

3.55

Re

fract

ive

ind

ex

wavelength (Pm)

InP

Q(Og=1.1 Pm)

Q(Og=1.3 Pm)

Q(Og=1.55 Pm)

Material In1-xGax AsyP1-y

Optical confinement

MMstrato p

strato n

strato attivo

n1

n1

n2M1 M2

n2 > n1

FOPD

O

Cavity modesCavity modes

Fabry-Perot resonator

SE mL 2}Re{2 Resonance equation(phase

condition)


FOPD

Fabry-Perot Laser

0 20 40 60 80

corrente (mA)

0

2

4

6

8

po

ten

za(m

W)

1280 1285 1290 1295 1300 1305

-70

-60

-50

-40

-30

-20

Wavelength (nm)

Am

plit

ude

(dBm

)

Opt. Sp.: Path: LAB\osa\fa36; Device:br00T20u; I = 30.0 mA; Peak: 1291.0 nm; 23-Jan-2003

2SWLFDO�FDYLW\� �DFWLYH�PDWHULDO

Ibias

Multimodal emission

Short haul – not necessarily true…


FOPD

DFB Laser

Grating

•Phase shifted grating allows to get 100% single mode yield, for ideal AR/AR coatings on both facets

/

T 90+Tb

b+/ = m (O / n)b = / sinT

/ (1+sinT� m(O / n)

O% 2n/O% 2n/Bragg wavelength

1260 1270 1280 1290 1300 1310 1320 1330 1340 1350

-80

-70

-60

-50

-40

-30

-20

-10

Wavelength (nm)

Rel

. Am

plit

ud

e (d

B)

l Peak: 1306.7 nm; SMSR: 49 dB


FOPD

Simulation results

Threshold gain and gain margin between lasing mode and competitive mode varying grating phase

Assumption: if gain margin >0.25 Single mode

emission

Yield=100%

Phase shift value: ��

$5$5

��XP

��XP

��XP


FOPD

MULTI QUANTUM WEL L

substrate: InP:n

InP:p

MOCVD

1) Epitaxial growth

Epi growth

substrate

Epi layer

<10 nm

How we did it……(1) Epitaxial growth


FOPD

photoresist

S iN

1) photolithography1) photolithography

2) Chemical etch2) Chemical etch

luce UV

mask

How we did it……(2) Processing


FOPD

From 2”(5cm) wafer: up to 20.000 lasers

How we did it……(3) Wafer cleaved in bars


FOPD

Wafer bars Coating /cleave Chips

How we did it……(4) Scribing: from wafer to chip


FOPDOutlineIntroduction


Pluggable solutions







FOPD Key design elements: ridge structure

Ridge structure

•No lateral blocking layers

•Very simple technological process (one-step epi-growth)

•Suitable for Al-based lasers and low cost devices

T iT i --PtPt--Au metalAu metal

SiOSiO22

Optimised facet cleavage processOptimised facet cleavage process

Heat pathHeat path

Narrow reverse mesa (small cavity, fast chips)Narrow reverse mesa (small cavity, fast chips)

Au plated padAu plated pad


FOPD

Key design elements: active cavity design

w

d

L

•w/d fixed by single mode constrain

•Thickness d increases with number of wells improving dynamic performances, but…..

- non uniform injection

- bimodal cavity

….if d is too high

•Reducing L, resonance frequency increases, but….

- Series resistance increases (lower w*L area )

- Thermal dissipation worsens Bad P-I linearity at high T

Geometry


FOPD

Key design elements: active cavity designFor a DFB the lasing mode is at Bragg wavelength (about), then detuning gain peak - OB is a design parameter

'gL

'gR

material gain for different carriers density (N)

•OB on gain peak leads to minimize threshold

•If OB is blue-shifted respect to gp, differential gain is higher ('gL> 'gR) then, resonance frequency in higher (large modulation bandwidth)

Optimization is needed for uncooled operations: GOB/GT| +0.08nm/°C and Ggp/GT | +0.4 nm/°C

Detuning


FOPD

Key design element: MQW active material

Bulk laser: Lx = 0.1 -0.3 Pm

QW (Quantum Well) laser :Active layer Lx < 0.01 Pm

bandadivalenza

bandadiconduzione

active

cladding

cladding

x =growth

banda di conduzione

banda di valenza

E 1c

E2c

E3c

hQ

E 1lhE 2lh

E1hhE2hhE3hh

(Single Quantum Well)(Single Quantum Well)

'Ec/'(g=0.67'Ev/'Eg=0.33GaAs/GaAlAs

'Ec/'(g=0.67'Ev/'Eg=0.33InP/InGaAsP

'Ec/'(g=0.75'Ev/'Eg=0.25InP/InGaAlAs

ZHOO

EDUULHU MQW key features:• gaingain•• speedspeed•• temperaturetemperature

Band structure SQW

Active layer


FOPDKey design elements: MQW active materialBand-offset optimization to reduce

heterobarrier (electrons) leakage current at high T

150 100 50 0 50 100 150

0

0.1

0.2

Level positions

e

hh

'Ecbulk

'Ec

'Ev

'Ec = 0.057 eV45 %

'Ev = 0.070 eV55%

'Ec < 'Ev � Electron Leakage

Possible solutions:

• wells/barriers strain

• different materialsInGaAsP/InGaAsP

InGaAsP/InP

for unstrain MQW

('Ec:'Ev = 40:60)

for optimized strain

('Ec:'Ev = 50:50 or better)

InGaAlAs/InP

('Ec:'Ev = 70:30)

InGaAsN/GaAs

('Ec:'Ev = 80:20!)

InGaAsP/InP

for unstrain MQW

('Ec:'Ev = 40:60)

for optimized strain

('Ec:'Ev = 50:50 or better)

InGaAlAs/InP

('Ec:'Ev = 70:30)

InGaAsN/GaAs

('Ec:'Ev = 80:20!)


FOPD

0 10 20 30 40 50 60 70 80 90 1000

5

10

15

20

25

30

35

40

45

Current (mA); - 09-Aug-2002

Po

wer

(m

W) T=20-100 ºC

0 10 20 30 40 50 60 70 80 90 1000

5

10

15

20

25

30

35

40

0 10 20 30 40 50 60 70 80 90 1000

Current (mA); - 20-Aug 2004

5

10

15

20

25

30

35

40

Po

wer

(m

W)

T=20-100 ºC

InGaAsP-basedMQW

InGaAsP-basedMQW

InGaAsAl-based MQW

InGaAsAl-based MQW

MQW active material optimization

T0=95 K

T0=48 K


FOPD

Outline

Introduction

Market downturn and recovering

Pluggable solutions







FOPD

Modulation of lasers sourcesTransmit information:

� Intensity modulation of laser source --

Intensity modulation by:

External modulator: � expensive //

(long haul only)

Direct modulation: � cheap/simple --

� short haul .

(<200 km @ 2.5 Gb, 30 km @ 10Gb)

� need high frequency devices /

So we want uncooled, low cost laser … and fast!!!


FOPD

Key features for direct modulationWide bandwidth

High modulation efficiency

Low Noise (RIN)

High temperature range (uncooled)

Low back reflection sensitivity

Low chirp

Current

Op

tica

l pow

er

B ias Modulation

“0” level

“1” level

Threshold

P(0)

P(1) Eye mask

experimental

Eyeaperture

Eyeamplitude

simulated


FOPD

A bit stream like this

can be heavily distorted passing through a non ideal channel; bit shape can be broadened and spread out of its time slot, overlapping on its neighbours : this is called “InterSymbolInterference (ISI)”

Recalls of digital communications


FOPD

A picture like this gives little information on signal distortion

To better evaluate signal distortion an “Eye Diagram” is builtThe eye diagram is obtained by slicing the bit sequence in one (or more) bit time slots and overlapping them.

Bit 1&2 Bit 1&2&3 Bit 1&2&3&4 Bit 1…5 Bit 1…8

Bit 1…32 Bit 1…127

First 32 bits of a longer bit sequence

Bit 1…12 Bit 1…18 Bit 1…24

Bit 1 2 3 4 5 6 7 8 9 10

Recalls of digital communications (2)


FOPD

Jitter :

DJ deterministic or pattern dependent jitter

RJ random jitter

Eye mask

Eyeaperture

Eyeamplitude

experimental

simulated

Main parameters of eye diagram


FOPD

Outline

Introduction

Datacom and telecom networks

Pluggable solutions







FOPDUncooled InGaAlAs ridge FP laser for 10GBASE-LRM product (300 m MMF)Device design:• Active layer: Al based material

Designed to enhance T0• 9 InGaAlAs 55Å wells; strain +0.8%• 8 InGaAlAs100Å barriers; strain –0.4%• 2xSCH1: InGaAlAs 350Å• 2xSCH2: InAlAs 500Å

• Device technology:High yield/low cost/Al compatible

• Reversed mesa ridge• Auto-aligned mesa

• Optical cavity:Very fast chip at high T operation

• Narrow cavity volume • Hr coating optimised versus both

Temperature and speed

200 Pm long x 250 Pm wide device

Post Deadline Paper at OFC 2005


FOPD

Device results - static 20 °C base chip temperature:

• Threshold 7.6 mA• High power 23 mW

85 °C base chip temperature:• threshold 15.6 mA • power 16.8 mW

95 °C base chip temperature:• threshold as low as 18 mA• Still more than 15 mW

0 10 20 30 40 50 60 70 80 90 1000

5

10

15

20

25fa021ak113: Optical Power (T=20, 40, 60, 80, 85, 90, 95 °C)

Current (mA); - 23-Dec-2004

Pow

er (

mW

)

T=20ºC; Ith= 7.6mA; PIth+30

= 8.9mW; Pmax

= 23.8mW T=40ºC; Ith= 9.3mA; P

Ith+30= 8.5mW, P

ratio,Ith+30=0.95; P

max= 22.4mW

T=60ºC; Ith=11.5mA; PIth+30

= 7.8mW, Pratio,Ith+30

=0.88; Pmax

= 20.0mWT=80ºC; Ith=14.5mA; P

Ith+30= 7.1mW, P


max= 17.4mW



=0.78; Pmax

= 16.8mWT=90ºC; Ith=16.6mA; P

Ith+30= 7.0mW, P


max= 15.9mW



=0.76; Pmax

= 15.3mW

Key points:• High optical power enable high

coupling loss• Small threshold increasing up to 95 C

since high T0 • Small bias variation over T• Small efficiency degradation over T� Constant eye quality with constant

modulation current!

Centre of eye power

Bias variation (0-85 °C)

Measured on chip on carrierMeasured on chip on carrier

Slope eff. ratio= 80%


FOPD

Device results - dynamic (eye diagrams)

10 Gb eye diagrams, 35 mA modulation current swing constant over T (20-110 °C)

20 °C base chip temperature:• 5 dB e.r. @ 35 mA bias C.O.E. 9• GbE mask: 57% mask margin 9

85 °C base chip temperature:• 5 dB e.r. @ 52 mA bias C.O.E. 9• GbE mask: 31% mask margin 9

110 °C base chip temperature:• 4.5 dB e.r. @ 60 mA bias C.O.E. 9• GbE mask: 22% mask margin 9

Eyes show no degradation up to –8 dB B.R. (Fiber)

Measured probing directly the chip by 40 GHz 50 Measured probing directly the chip by 40 GHz 50 OhmOhm--series matched RF probeseries matched RF probe

��&�

��&�

��&�


FOPD

Modal dispersion in MM fibersModal dispersion in MM fibers

back


FOPD

Technologies for LRM application: EDC (Electronic Dispersion Technologies for LRM application: EDC (Electronic Dispersion CompensationCompensation))

•EDC uses adaptive electrical filtering techniques to compensate for limitations incurred during fiber propagation:

- modal dispersion- chromatic dispersion - polarization modal dispersion

•EDC can be realized in an integrated circuit.•EDC can enhance the performance of existing transceivers and enabling newapplications.

EDC technology

10 Gbps to 300m over

legacymultimode fiber

TX CDR/LD

FP

/DF

B

LinTIA

220m MMF RX CDR

Electronic Dispersion Compensation

algorithm

D

t1

D

t2

D

tn

L PF CDR

Signal

Feedback

Adaptive controller

t1 tn

EQ

Why?


FOPD

10Gb/s DFB Sonet for XFP LR

L

L/2 L/2

Phase shifted grating

Rev. mesa

Grating, O/4 phase shift centered

stop etchInP:p spacer

grating layer

InGaAlAs ridge structureInP:n

InP + InGaAscontact layer

InGaAlAs MQW


FOPD

250

um

Emitting facet

200 um

Angled section toward output facet

ARARARAR

Bar number

Main specsTarget application: 10Gb/s multi rate XFP LR

•80 ºC base chip max temperature

•Direct modulation at 10Gb/s

•>=7 dB ER @ 20-70 ºC, SONET OC192

DFB top view

1250 1260 1270 1280 1290 1300 1310 1320 1330 1340

-70

-60

-50

-40

-30

-20

-10

0

W avelength (nm)

Rel

. Am

plitu

de (d

B)

Opt. S p.: P ath: L AB \osa\da071a_y1; Device: da071a_y101T 20w; I = 50.0 mA; 21-S ep-2006

O Peak: 1294.8 nm; SMSR: 50 dB


FOPD

•Ith <30mA and Pout> 8mW @ 80°C

•7dB ER @20°C with 35mA* Iswing 18% mask margin on OC192 SONET mask

•7dB ER @80°C with 35mA* Iswing 8% mask margin on OC192 SONET mask

* XFP-module provides higher Ibias and up to 55mA Iswing

Lab results

20C

80C

-20 0 20 40 60 80 100 1200

5

10

15

20

25da071ay139: Optical P ower (T =20, 40, 60, 80, 85 °C)

Current (mA); - 21-S ep-2006

Pow

er (m

W)

T=20ºC; Ith= 9.9mA; PIth+30

= 8.0mW; Pmax

= 22.5mW



=0.89; Pmax

= 18.6mW



=0.73; Pmax

= 13.9mW



=0.54; Pmax

= 9.0mW



=0.50; Pmax

= 7.8mW


FOPD70C

40C

-5C

0.426A3.3V ICC

36.256mAI2CTXBIAS50.38dBSMSR

1297.38nmPEAKWL-3.05

dBmTXOPT

6.91dBTXEXR18%TXMM

-5C

0.445A3.3V ICC

-3.55dBmTXOPT

6.98dBTXEXR16%TXMM

40C

0.488A3.3V ICC

64.61mAI2CTXBIAS48.22dBSMSR

1304.36nmPEAKWL-3.75

dBmTXOPT

6.96dBTXEXR19%TXMM

38.6mUI

Jitter Gen Vpk-pk 4M-80M

54.9mUI

Jitter Gen Vpk-pk 50K-80M

70C

TTC-DFB, bandwidth and XFP module results

0 2 4 6 8 10 12 14 16 18 20-15

-10

-5

0

5

F requency (GHz)

Rel

. Am

plitu

de (d

B)

Device: \NET _AN\da130__y1\da130__y121T 20 : Mod. Bandwidth; 11-Jun-2007

Ith

+ 10 mA: (Ith

= 11 mA); f-3dB

= 12.90 GHz

Ith

+ 30 mA: (Ith

= 11 mA); f-3dB

= 18.96 GHz

Ith

+ 50 mA: (Ith

= 11 mA); f-3dB

= 20.00 GHz

Ith

+ 70 mA: (Ith

= 11 mA); f-3dB

= 20.00 GHz

Ith

+ 90 mA: (Ith

= 11 mA); f-3dB

= 20.00 GHz

Bw=19GHz @ Ibias=40mA T=20C

0 2 4 6 8 10 12 14 16 18 20-25

-20

-15

-10

-5

0

5

10

F requency (GHz)

Rel

. Am

plitu

de (d

B)

Device: \NET _AN\da130__y1\da130__y121T 80 : Mod. Bandwidth; 11-Jun-2007

Ith

+ 10 mA: (Ith

= 27 mA); f-3dB

= 9.12 GHz

Ith

+ 30 mA: (Ith

= 27 mA); f-3dB

= 13.69 GHz

Ith

+ 50 mA: (Ith

= 27 mA); f-3dB

= 15.28 GHz

Ith

+ 70 mA: (Ith

= 27 mA); f-3dB

= 15.73 GHz

Bw=13.7GHz @ Ibias=57mA T=20C


FOPD

Pout

Ia Ig

Pout

DBR a 2 sezioni

Sezione attiva responsabile della emissione di fotoni

Sezione di tuning sulla quale è presente un

reticolo di Bragg

Tunable devices: Distributed Bragg Reflector DBR

0 2 4 6 8 1 0 1 2 14 16 1 8 201.5

1. 502

1. 504

1. 506

1. 508

1 .51

1. 512

1. 514

1. 516

1. 518

Simulazione e misura della lunghezza d’onda diemissione in funzione della corrente nel grating

2-sections DBR


FOPDDevice results: tuning maps

-10 0 10 20 30 40 50 60 701.55

1.555

1.56

1.565

Wav

elen

gth

[um

]GRATING Current [mA]

-10 0 10 20 30 40 50 60 700

20

40

60

SM

SR

[dB

]

Emitted wavelength and SMSR versus grating current

> 10 nm tuning > 40 dB SMSR @ I active > 40 mA


FOPD

Passive and tuning waveguides

DBR and SOA active waveguide

Wide tunable laser: DBR Array

InP Monolithically integrated

DBR Array + PICBent waveguides

MMI

SOA

4 grating pitches (EBL) � 10 nm spaced

Bragg Wavelengths

Bent output

Output beam

��XP

��XP

��XP

Medium tuning DBRarray

ECOC 2003ECOC 2003


FOPD

Avago tunable laser: key featuresSmall (0.67 mm2 ,1670um x 400um) chip size

40 nm tuning range

• 4 x 10 nm tuning (each DBR)

• easy tuning control

+ 13 dBm output power ex facet

• at only 50 mA DBR active, various grating curr., 100 mA SOA

Low (<250 mW) power consumption

BlankingBlanking (>40dB) and VOAVOA (>10dB) features

Bent SOA with “relaxed specs” Anti Reflection Coating (10-3)

By a monolithic InP based chip

R. Paoletti et al, ECOC 2003R. Paoletti et al, ECOC 2003


FOPD

Device results: emitted spectrum

1.52 1.53 1.54 1.55 1.56 1.57 1.58 1.59 1.6-70

-60

-50

-40

-30

-20

-10

0

chip4-M35-2 @ 20°C: Iact=50mA

Wavelength - nm -

Rel

. Opt

ical

Pow

er -

dB -

41 nm tuning range


FOPD

FINE E…

grazie per l’attenzione!


FOPD

The end!BooksG. Guekos, Photonic Devices, Springer, 1999, ISBN 3-540-64318-4

L. A. Coldren, S. W. Corzine, “Diode lasers and photonic integrated circuits”, John Wiley and sons, inc.,

P. Vasil’ev, “Ultrafast diode laser”, Artec House Boston-London

K. Petermann, “Laser Diode Modulation” and Noise, Dordrecht, The Netherlands: Kluwer Academic Publishers

Related published paper F. Delpiano, R. Paoletti, P. Audagnotto and R. Puleo, "High Frequency Modelling and Characterisation of High Performance DFB Laser Modules", IEEE Transaction on Components, Hybrids, and Manufacturing Technology, Part B, Vol. 17, No 3, pp. 412-417, august 1994.

R. Paoletti, D. Bertone, A. Bricconi, R. Fang, L. Greborio, G. Magnetti, M. Meliga, "Comparison of Optical and Electrical Modulation Bandwidths in three different 1.55 Pm InGaAsP Buried Laser Structures", SPIE’S International Symposia - Photonics West ’96, pp. 296-305, 30 Jan. - 1 Febr. 1996, S. Josè, CA, USA.

R. Paoletti, M. Meliga, I. Montrosset, “Optical Modulation Technique for Carrier Lifetime Measurement in Semiconductor Lasers”, IEEE Photonics Technology Letters, Vol. 8, No. 11, pp. 1447-1449, November 1996.

R. Paoletti, M. Meliga, G. Oliveti, M. Puleo, G. Rossi, L. Senepa, “10 Gbit/S Ultra-Low Chirp 1.55PM Directly Modulated Hybrid Fiber Grating -Semiconductor Laser Source”, 23rd European Conference on Optical Communication ECOC ’97, Mo 3B. 22-25 September 1997, Edimburgh (UK).

R. Y. Fang, D. Bertone, M. Meliga, Montrosset*, S. Murgia, G. Morello, G. Magnetti, G. Oliveti, R. Paoletti, “A simple structure 1.55 Pm InGaAsP/InP Spot Size Converted (SSC) laser”, IEEE Photonics Technology Letters, Vol. 10, No. 6, pp. 775-777, June 1998.

G. Rossi, R. Paoletti, M. Meliga, “SPICE simulation for analysis and design of fast 1.55 Pm MQW laser diodes”, IEEE Journal of Lightwave Technology, Vol. 16, No. 7, July 1998.

R. Paoletti, M. Agresti, G. Burns, G. Berry, D. Bertone. P. Charles, P. Crump, A. Davies, R.Y. Fang, R. Ghin, P. Gotta, M. Holm, C. Kompocholis, G. Magnetti, J. Massa, G. Meneghini, G. Rossi, P. Ryder, A. Taylor, P. Valenti and M. Meliga, "100 qC, 10 Gb/s directly modulated InGaAsP DFB lasers for uncooled Ethernet applications", post-deadline at European Conference on Optical Communication ECOC ’2001, October 2001,Amstedam (NL).

R. Paoletti, M. Meliga, "Uncooled, high speed DFB lasers for Gigabit Ethernet applications", invited paper at SPIE’S International Symposia -Photonics West Optoelectronics 20021, 19 - 25 Jan. 2002, S. Josè, CA, USA.

R. Paoletti, C. Coriasso, M. Agresti, P. Gotta, G. Magnetti, A. Moro, D. Sarocchi, D. Soderstrom, C. Cacciatore, L. Fratta, M. Vallone, A. Stano, E. Liotti, P. Valenti, G. Roggero, G. Fornuto, G. Burns, R.Harrell, P. Charles, D. Clark, G. Berry and M. Meliga, "Small chip size, low power consumption, fully electronic controlled tunable laser source with 40 nm tuning range and 20 mW output power for WDM applications", ECOC 2003, 21 - 25 Sept. 2003, Rimini, Italy

R. Paoletti, M. Agresti, D. Bertone, L. Bianco, C. Bruschi, A. Buccieri, R. Campi, C.Dorigoni, P. Gotta, M. Liotti, G. Magnetti, P. Montangero, G. Morello, C. Rigo, E. Riva, D. Soderstrom, S. Stano, P. Valenti, M. Vallone, M. Meliga" Highly reliable and high yield 1300 nm InGaAlAs directly modulated ridge Fabry-Perot lasers, operating at 10 Gb/s, up to 110 ºC, with constant current swing ", Post deadline at Optical Fiber Conference OFC 2005, Anaheim (CA)

Documents

Optical Navigation Divisionleos.unipv.it/slides/lecture/AgrestiPDF[1].pdf · 2009-11-23 · Datacom – telecom networks Pluggable solutions 10 Gb platforms and segmentation within