Embed Size (px)
Citation preview
Designed by CXRO. Manufactured by Intel.
Overview of the SEMATECH Berkeley MET reticle IMO220846 IMO228775
Available to MET users starting 2012.06.01 2012.12.04
Mask ID: IMO204990Substrate: QuartzML: 2.5-nm Ru-capped 40-pair MLAbsorber: 87-nm TaON/TaNBS film: 70-nm CrN
Mask Info
white = re!ectiveblack = absorber.
bright "eld(BF)
dark "eld(DF)
low-!are bright "eld(LFBF)
Field types
Field of view
600-um
200-um
Subfields will be indicated by this graphic
Entire fields will be indicated by this graphic
200-um x 66-um subfield
600-um x 200-um. The majority of the fields on the reticle are 3x3 arrays of a ‘sub-field’ as shown below.
500 um pad 500 um pad 500 umm pad Illum Monitor Grid 2 Illum Monitor Grid 2
SEMATECH Contact (DF) Contact Bias (DF) Line End and Jog (DF) Contact and Slot (DF) HV and Contact (DF)
SEMATECH Contact (BF) Contact Bias (BF) Line End and Jog (BF) Contact and Slot (BF) HV and Contact (BF)
HV Cleave (DF) LBNL (DF) LBNL (LFBF) Contact and Slot (LFBF) HV and Contact (LFBF)
HV Cleave (LFBF) LBNL (BF) Pseudo PSM 1D Pseudo PSM 2D Pseudo PSM Cleave
SEMATECH Contact (DF) Contact Bias (DF) Line End and Jog (DF) Contact and Slot (DF) HV and Contact (DF)
SEMATECH Contact (BF) Contact Bias (BF) Line End and Jog (BF) Contact and Slot (BF) HV and Contact (BF)
HV Cleave (DF) LBNL (DF) LBNL (LFBF) Contact and Slot (LFBF) HV and Contact (LFBF)
HV Cleave (LFBF) LBNL (BF) Pseudo PSM 1D Pseudo PSM 2D Pseudo PSM VCleave
C1 C2 C3 C4 C5R1
R2
R3
R4
R5
R6
R7
R8
R9
Reticle contents: 9-row x 5-col = 45 fields.
primary primary copy tool maintenance new
HV and Contact
Contact & Slot
Line End & Jog
Contact Bias
SEMATECH Contact
HV Cleave
LBNL Pseudo PSM
Pseudo PSM Cleave
VLM image
The following slides show a high-level summary of each field of the reticle.
NOTE: All fields print as a vertically flipped version of what you see here.
For a detailed high-resolution version of each field, use the links on the left
side of the website.
1:1 horizontal lines. 60-nm half pitch to
12-nm half pitch
1:1 vertical lines. 60-nm half pitch to
12-nm half pitch 1:1 contacts 50-nm half pitch to
16-nm half pitch
1:1 contacts 50-nm half pitch to
16-nm half pitch
HV and Contact (BF)
HV and Contact (BF)
1:1 horizontal lines. 60-nm half pitch to
12-nm half pitch
1:1 vertical lines. 60-nm half pitch to
12-nm half pitch 1:1 contacts 50-nm half pitch to
16-nm half pitch
1:1 contacts 50-nm half pitch to
16-nm half pitch
HV and Contact (LFBF)
1:1 horizontal lines. 60-nm half pitch to
12-nm half pitch
1:1 vertical lines. 60-nm half pitch to
12-nm half pitch 1:1 contacts 50-nm half pitch to
16-nm half pitch
1:1 contacts 50-nm half pitch to
16-nm half pitch
HV and Contact (DF)
Contact and Slot (BF)
Contact and Slot (LFBF)
Contact and Slot (DF)
Line End and Jog (BF)
Line End and Jog (DF)
Line End and Jog (BF) (detail)
Contact Bias (BF)The subfield contains cells for 57 nm - 10 nm nominal CD in 1 nm increments
Detail on next slide
Contact Bias (BF) (detail)
Bias from -25% to 25%. Duty cycle from 1:1 to 1:8
Contact Bias (dark)
Detail on next slide
Contact Bias (DF) (detail)
Bias from -25% to 25%. Duty cycle from 1:1 to 1:8
SEMATECH Contact (BF)
SEMATECH Contact (DF)
LBNL (BF)
LBNL (LFBF*)
*contacts are dark-"eld NOT low-!are bright-"eld
LBNL (DF)
Pseudo PSM 1D
30 nm - 10 nm HP lines
30 nm - 10 nm HP lines
Pseudo PSM 2D
30 nm - 10 nm HP contacts
30 nm - 10 nm HP lines
Pseudo PSM Cleave
30 nm - 10 nm HP lines
Horizontal block
Vert
ical
blo
ck
HV Cleave (LFBF)
1:3 lines 16 nm - 32 nm
1:1 lines 16 nm - 40 nm HP
100 nm HP dense contacts
16
3216
40
Horizontal block
Vert
ical
blo
ck
HV Cleave (DF)
100 nm HP dense contacts
Illum Monitor Grid 2
