P, Sb and Sn Ion Implantation with Laser Melt-LPC (Liquid ...€¦ · Rs (Ω/ ) Depth (A) Sb-RTA-melt P-RTA-melt 1E15/cm2 dose 1E16/cm2 dose. Trumble, Bell Labs, 1959 7/15/2015 18

P, Sb and Sn Ion Implantation with Laser

Melt-LPC (Liquid Phase Crystallization)

For High Activation n+ Ultra-Shallow

Junction in Ge Epilayer and Surface

Strain-Ge Formation For Mobility

EnhancementJohn Borland1, Joshua Herman2, Steve Novak2, Hiroshi Onoda3, Yoshiki

Nakashima3, Karim Huet4, Walt Johnson5 and Abhijeet Joshi6

1J.O.B. Technologies, 2CNSE/SUNY Polytechnic Institute, 3Nissin Ion

Equipment, 4LASSE/Screen, 5KLA-Tencor and 6Active Layer

Parametrics

IWJT-2015 June 11-12, 2015 Kyoto, Japan

&

Semicon/West July 16, 2015

www.job-technologies.com1

Outline• Introduction

– Device Roadmap to High Mobility Channels at 7/10nm Node

– Issues with Ge n+ USJ Formation & High Dopant Activation

– Strain-Ge High Mobility Channel Material

• Experimentation

– 70nm Ge-epi/SiGe-buffer/Si P(100) wafer

– P, Sb and Sn Implantation

– 308nm Eximer Laser Annealing

• Results

– Rs Dopant Activation

– SIMS Dopant Profiles

– XRD Strain-Ge Analysis

– Differential Hall Mobility Depth Profiles

• SummaryJ.O.B. Technologies (Strategic

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2

J.O.B. Technologies (Strategic

Marketing, Sales &

Technology)

3

2014 total smartphone sales were 1.24B units.

Q4/14=367.5B smartphones

=69% of cell phone sells!

Q1/15=71.7B PC/tablets

2014=$336B


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4

Morris Chan

chairman of TSMC

wants 1 week cell

phone battery life so

need low leakage

devices!

Motorola Droid 48 hrs

7/15/2015 Advanced Integrated Photonics, Inc. -

Proprietary5

IEDM-2013 short course

*2016: >50%SiGe100%Ge-FinFET at 10nm*2018: Nano-wire at 5nm (Si, SiGe and Ge)

100nm Ge Thermal Surface Loss at 600C

7/15/2015 6

Oh & Campbell, Univ of Texas, J. Electronic Mats., vol.33, no.4, p. 364, 2004.

B=35keV/2E15

7

Anneals appear to have caused Ge loss

Assuming repeatable anneal conditions….

Following High Temp Anneals Only:

• 700 ºC loss is 33%


Very low temperature anneal (375 ºC) prior to high temp. anneal greatly mitigates Ge loss.

Following Very Low Temp Anneals (375 ºC) + High Temp Anneal:


• 900 ºC loss is ~ 0%

Epion & J.O.B. Technologies, 2004

Random RBS channel

8

30 keV Ge (5E13 GCIB dose)

Random - Ge peak detail

0

100

200

300

400

500

600

700

800

900

1000

380 400 420 440

Channel

Co

un

ts

As-GCIB'd

VLTA+700ºC

700ºC

VLTA+900ºC

900ºC

2.99E+16

Ge/cm2

3.12E16

Ge/cm2

2.80E16

Ge/cm2

2.01E16

Ge/cm2

1.47E16

Ge/cm2

375C then 900C anneal shows no Ge loss 900C alone shows 50% Ge loss

Epion & J.O.B. Technologies, 2004


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9

Borland & Konkola, AIP, IIT-2014

10

SRP for As-implant 1um Ge-epi wafers after RTA annealing SRP for Sb-implant 1um Ge-epi wafers after RTA annealing

SRP for P-implant and co-implant in 1um Ge-epi wafers after

625oC RTA annealingSRP for P-implant and co-implant in 1um Ge-epi wafers after

900oC RTA annealing

Borland & Konkola, IIT-2014

P=2E15 (625C & 900C & 950C)

7/15/2015 11

1E-03

1E-02

1E-01

1E+00

1E+01

1E+02

1E+03

1E+15

1E+16

1E+17

1E+18

1E+19

1E+20

1E+21

0 0.2 0.4 0.6 0.8 1 1.2

Si,G

e IN

TE

NS

ITY

(ato

m%

)

O,P

CO

NC

EN

TR

AT

ION

(ato

ms/c

c)

DEPTH (µm)

APIC Corp: Sample GEPLO-2 (P,O,Ge,Si)

Si->

O

Ge->

P

Fig #06 C0ELD047_YR_111 Sample GEPLO-2 (P,O,Ge,Si)

2/5/2014

1E-03

1E-02

1E-01

1E+00

1E+01

1E+02

1E+03

1E+15

1E+16

1E+17

1E+18

1E+19

1E+20

1E+21

0 0.2 0.4 0.6 0.8 1 1.2

Si,G

e IN

TE

NS

ITY

(ato

m%

)

O,P

CO

NC

EN

TR

AT

ION

(ato

ms/c

c)

DEPTH (µm)

Si->

O

Ge->

P

Fig #09 C0ELD047_YR_112 Sample GEPLO-4 (P,O,Ge,Si)

2/5/2014

1E-03

1E-02

1E-01

1E+00

1E+01

1E+02

1E+03

1E+15

1E+16

1E+17

1E+18

1E+19

1E+20

1E+21

0 0.2 0.4 0.6 0.8 1 1.2

Si,G

e IN

TE

NS

ITY

(ato

m%

)

O,P

CO

NC

EN

TR

AT

ION

(ato

ms/c

c)

DEPTH (µm)

Si->

O

Ge->

P

Fig #12 C0ELD047_YR_122 Sample GEPL0-5 (P,O,Ge,Si) (smooth area)

2/6/2014

Kennel, Intel, ECS Oct 2012 paper 3124Borland & Konkola, IIT-2014

IEDM-2012 Paper 23.3: YJ Lee of

NDL on “Full Low Temperature

Microwave Processed Ge CMOS

Achieving Diffusion-Less Junction

and Ultrathin 7.5nm Ni Mono-

Germanide”.


Marketing, Sales &

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12

7/15/2015 13

15Ω/

Mazzocchi et al., IEEE-RTP 2009

Phos

Thareja et al., Stanford, IEDM-2010 ref 11

7/15/2015 14


Marketing, Sales &

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15


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16

Raman by WaferMasters

Raman by WaferMasters

17

1

10

100

1000

10000

100000

100 1000 10000

P-SEN-5E15 As-SEN-5E15

Sb-SEN-5E15 Sn+P-Nissin-5E15

P-1E16-LMA Sb-1E16-LMA

P-1E16-RTA As-1E16-RTA

Sb-1E16-RTA P-NDL

P-LASSE-09 P-LASSE-14

P-TSMC P-Stanford

Sb-Stanford As-Stanford

P-TSMC

Sb-Stanford

P&As-Stanford

P-LASSE

Sb-JOB-LMA

P-JOB-LMA

Sb-JOB-RTA

P-JOB-RTA

As-JOB-RTA

P-NDL

Rs (Ω/)

Depth (A)

Sb-RTA-melt

P-RTA-melt

1E15/cm2 dose

1E16/cm2 dose

Trumble, Bell Labs, 1959

7/15/2015 18

Excico P-LMAStanford Sb-LMA

IBM Sb-RTA

As-MLD

As-LSA

7/15/2015 19

IEDM-2013 short course

Borland: Localized Ge-LPE by Laser Melt Oct 2004 ECS: Ge-GCIB/Infusion (E17/cm2)June 2013 IWJT: Ge-plasma implant (1E17/cm2)Oct 2014 ECS: Ge-beamline implant (5E16/cm2)

Blanket Ge-layer first then

Ge-Fin etch Selective Ge-epi Fin


Marketing, Sales &

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HF-vs-No HF

Cleaning For Ge

Infusion


Marketing, Sales &

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21

Localized/Selective Ge & SiGe

Formation By Liquid Phase

Epitaxy (LPE) Using Ge+B

Plasma Ion Implantation And

Laser Melt Anealing

Ge 3keV (~7nm) at 1E16/cm2 & 1E17/cm2

B2H6 500V (~7nm) at 4E15/cm2 & 4E16/cm2

Ge+B Plasma Implanted Wafers Provided by Micron

Laser Melt Annealing Provided by Innovavent & Excico

IWJT June 6, 2013

JOB Technology, Micron, Innovavent, Excico, KLA-Tencor, CNSE, EAG & UCLA

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

3000

3200

3400

3600

0 0.5 1 1.5 2 2.5 3 3.5

308nm 515nm Excico InnovaventMelt Depth (A)

Laser Power Level (J/cm2)

515nm

0% Ge

515nm

55% Ge

308nm

55% Ge 308nm

0% Ge

SHI-527nm

Ge=10%

Ge=0%

Intel 308nm

Ge-PAI

10pulses

248nm

Ge-PAI

Excico-Therma-Wave (TW)


Marketing, Sales &

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23

100.00

1000.00

10000.00

100000.00

1000000.00

0.00 0.50 1.00 1.50 2.00 2.50 3.00

BH500V/4E15

GE1E16+BH4E15

GE1E17+BH4E15

BH500V/4E16

GEE17+BH4E16

Laser Power (J/cm2)

TW

Dopant Activation threshold?

Melt threshold by TRR!

a-Ge

Poly-Ge LPE-Ge


Marketing, Sales &

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24

0.0J/cm2 1.0J/cm2 2.5J/cm2

0.001

0.01

0.1

1

10

100

1.00E+17

1.00E+18

1.00E+19

1.00E+20

1.00E+21

1.00E+22

0 50 100 150 200 250

Ge

Arb

. U

nit

s

B, C

, O

Co

nc

en

tra

tio

n (

at/

cm

3)

Depth (nm)

12C

16O

11B+28Si

28Si+74Ge

0.0001

0.001

0.01

0.1

1

10

100

1.00E+17

1.00E+18

1.00E+19

1.00E+20

1.00E+21

1.00E+22

1.00E+23

0 100 200

Ge A

rb.

Un

its

B, C

, O

Co

ncen

trati

on

(at/

cm

3)

Depth (nm)

12C

16O

11B+28Si

28Si+74Ge

0.0001

0.001

0.01

0.1

1

10

100

1.00E+17

1.00E+18

1.00E+19

1.00E+20

1.00E+21

1.00E+22

1.00E+23

0 50 100 150 200 250

Ge A

rb u

nit

s

B, C

, O

Co

ncen

trati

on

(at/

cm

3)

Depth (nm)

12C

18O

11B+28Si

28Si+74Ge

0

10

20

30

40

50

60

70

80

90

100

110

120

130

140

150

160

170

0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600

Mo

bilit

y (

cm

2V

-1s

-1)

Depth (Å)

Mobility JA14ED12-1

Drift

0

10

20

30

40

50

60

70

80

90

100

110

120

130

140

150

160

170

0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600

Depth (Å)

Ge=1E17/cm2 + BH=4E16/cm2

Ge=1E16/cm2 + BH=4E15/cm2

>4x hole-mobility!

ALP Hall Analysis of 308nmSlot#14:Ge=1E16+B=4E15

Slot#18: Ge=1E17+B=4E16

Ge=0%+BH=4E16/cm2

Borland et al., IWJT-2013

Liquid Phase Epitaxy (LPE)

Formation of Localized High

Quality/Mobility Ge & SiGe by High

Dose Ge-Implantation with Laser Melt

Annealing for 10nm and 7nm Node

Oct 6, 2014 ECS Conference on SiGe & Ge TechnologyJohn Borland1,2, Michiro Sugitani3, Peter Oesterlin4, Walt Johnson5, Temel

Buyuklimanli6, Robert Hengstebeck6, Ethan Kennon7, Kevin Jones7 & Abhijeet Joshi8

1JOB Technologies, Aiea, Hawaii2AIP, Honolulu, Hawaii

3SEN, Shinagawa, Tokyo, Japan4Innovavent, Gottingen, Germany5KLA-Tencor, Milpitas, California6EAG, East Windsor, New Jersey

7University of Florida, Gainsville, FL8Active Layer Parametrics, LA, CA

0

500

1000

1500

2000

2500

3000

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

300ns Ge+Sb3E13 600ns Ge+Sb3E13

1200ns Ge+Sb3E13

300ns Ge+Sb3E15 600ns Ge+Sb3E15

1200ns Ge+Sb3E15

300ns Sb3E13 600ns Sb3E13

1200ns Sb3E13

300ns Sb3E15 600ns Sb3E15

1200ns Sb3E15

TW

Laser Power Level (J/cm2)

Sb=3keV/3E15

Ge=3keV/5E16

+Sb=3keV/3E15

Sb=3keV/3E13

Ge=3keV/5E16

+Sb=3keV/3E13

515nm laser


Marketing, Sales &

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28

1E+15

1E+16

1E+17

1E+18

1E+19

1E+20

1E+21

1E+22

1E+23

0 10 20 30 40 50 60 70 80

O,S

i,G

e,S

b C

ON

CE

NT

RA

TIO

N (

ato

ms/c

c)

DEPTH (nm)

Sb+Ge 3E15/5E16 No Anneal

O SiGe

Sb

Sb 3E15 LMA 4J 1200ms

O

Si

Ge

Sb

Sb+Ge 3E15 LMA 4J 1200ms

O

Si

GeSb

29

0

50

100

150

200

250

300

350

400

450

500

1E+12 1E+13 1E+14 1E+15 1E+16

Mo

bili

ty[c

m2

/V-s

]

Sb Concentration

Avg. Drift Mobility

Ge+Sb 3E13 4J/cm2 for 600ns


Sb 3E15 4J/cm2 for 600ns


Ge=100%

Ge=100%Si=100%

Si=100%

4% Ge

B

Ge=100%

Ge=25%

Borland et al., ECS Oct 2014

IEDM-2013 Stanford/Synopsys paper: 4%GeSn-

channel for pMOS & 100%Ge-channel nMOS

7/15/2015 30


• Experimentation


– P, Sb and Sn Implantation at 5E15/cm2

• P=4keV, Sb=11keV & Sn=10keV

• P, Sn+P, Sb and Sn+Sb

– 308nm Excimer Laser Annealing 0.6-1.6J/cm2

• Results






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31

Half-Wafer Sn-Implant 5E15/cm2

Full Wafer P or Sb 5E15/cm2 Implant


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32

1.00E+12

1.00E+13

1.00E+14

1.00E+15

1.00E+16

1.00E+17

1.00E+18

1.00E+19

1.00E+20

1.00E+21

1.00E+22

0 20 40 60 80 100

Co

nc

en

tra

tio

n (

/cm

3)

Depth (nm)

P/Sb in Ge

Sb in c-Ge 11keV 5E15

P in a-Ge 4keV 5E15

P in c-Ge 4keV 5E15

Sb in a-Ge 4keV 5E15

Sb in c-Ge 4keV 5E15

Sb in a-Ge 7.2keV 5E15

Sb in c-Ge 7.2keV 5E15

Sb in a-Ge 11keV 5E15

Sn+P-SIMS, Sn=12.5% ~4.5E15/cm2

Sn+Sb-SIMS, Sn=4.5% ~2.3E15/cm2

Maybe due to retrograde surface with

Sb co-implant!

Half-Wafer Sn-Implant 5E15/cm2


Marketing, Sales &

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Before Implant

Before Implant

After Implant

After Implant


Marketing, Sales &

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34


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IWJT-2015 Paper S5-2 by Nishimura of Univ of Tokyo on “Recent Progress of Junction Technology for

Germanium CMOS”. In Fig.4 below they used Raman analysis to quantify implant annealing damage

recovery from the P=30keV/3E15 implant in to Ge-Cz wafers. They commented that even after high

temperature annealing at 850oC the Raman Ge peak did not recover to the reference Ge-Cz wafer level

concluding there still remains some residual implant damage. Fig.5 shows the effects of P implant dose from

1E13/cm2 to 3E15/cm2 on resistivity and FWHM Raman Ge-peak with 600oC 5 min SPC (solid phase

crystallization) annealing and the critical P-implant dose is <2E14/cm2 to be defect free after annealing.


– Issues with Ge n+ USJ Formation & High Dopant Activation

– Strain-Ge High Mobility Channel Material

• Experimentation


– P, Sb and Sn Implantation

– 308nm Eximer Laser Annealing

• Results






Marketing, Sales &

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36


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37

10

100

1000

10000

100000

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

Rs (ohms/sq)

P=5E15

P+Sn=5E15

Sb=5E15

Sb+Sn=5E15

Laser Anneal Power (J/cm2)

Implant Damage Acceptor Defects?

Ge compressive strain by P+Sn?

Ge tensile strain by Sb?

Sb=260A

P=400A

P+Sn=400A

P=450A

P=450A

P=460AP+Sn=400A P+Sn=450A

P+Sn=450ASb=260A Sb=320A

Sb=380A

Zaima, Nagoya U., ECS Oct 2014,

paper P7-1772

1E+15

1E+16

1E+17

1E+18

1E+19

1E+20

1E+21

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

B C

ON

CE

NT

RA

TIO

N (

ato

ms/c

c)

DEPTH (µm)

11B

LD047_ym20 Sample GHC1 (B) all data

AIP Ge 5e15 B No Anneal

Carrier Concentration

Borland & Konkola, AIP, IIT-2014

39

1

10

100

1000

10000

1.00E+13 1.00E+14 1.00E+15 1.00E+16 1.00E+17

Microwave 5min

750C 90min

850C 60min

1050C 10min

Laser Melt=3J

Laser Melt=5J

Si-waferR

s (o

hm

s/sq

)

Phos Dose (/cm2)

Ge-Stanford Sb laser melt

Ge-Stanford P&As laserGe-Excico P laser melt

AIP Ge+oxide capP at 625CP at 900C

SbRTA 1050C

SbLaser Melt

SbRTA 1050C

SbLaser Melt

IIT-2014 MWAP+Ge, P+Ge+C

Semicon/West -2014UltratechAs-LSA

Sb-JOB/LASSE SiN capP-JOB/LASSE SiN cap

P-JOB/CNSE/LASSE no cap

Sb-JOB/CNSE/LASSE no cap

Ar/Xe+As-RTA

Hiroshima & Nagoya


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40

N+ Xj

P=398A

Sn+P=387A

Sb=256A

Sn+Sb=389A

Sb-melt solid solubility limit in Ge!

P-melt solid solubility limit in Ge!


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41

No Anneal=400A

0.6J/cm2=450A & Melt Depth=0A

1.0J/cm2=460A & Melt Depth=<100A


P-melt solid solubility

limit in Ge!


Marketing, Sales &

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42

No Anneal=387A


1.0J/cm2=450A & Melt

Depth=<100A


Depth=280A


Depth=625A

P-melt solid solubility

limit in Ge!


Marketing, Sales &

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43

No Anneal=326A



Depth=<100A


1.5J/cm2=740A & Melt depth=600A

Sn=4E14/cm2

Sn=5E15/cm2

Sn solid solubility limit

in Ge ~4-5E20/cm3


Marketing, Sales &

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44

No Anneal=260A

0.6J/cm2=270A & Melt Depth=<100A



Sb-melt solid solubility

limit in Ge!


Marketing, Sales &

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45

No Anneal=389A



Depth=280A


Depth=550A

Sb-melt solid solubility

limit in Ge!


Marketing, Sales &

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46

No Anneal=353A



Depth=280A


Depth=560A

Sn solid solubility limit

in Ge ~4-5E20/cm3

47

P Sn Sheet ResistanceP Sheet ResistanceSb Sn Sheet ResistanceSb Sheet Resistance

48

1

10

100

1000

10000

100000

100 1000 10000

P-SEN-5E15 As-SEN-5E15Sb-SEN-5E15 P-Nissin-5E15Sn+P-Nissin-5E15 Sb-Nissin-5E15Sn+Sb-Nissin-5E15 P-1E16-LMASb-1E16-LMA P-1E16-RTAAs-1E16-RTA Sb-1E16-RTAP-NDL P-LASSE-09P-LASSE-14 P-TSMCP-Stanford Sb-StanfordAs-Stanford

P-TSMC

Sb-This work Sn+Sb-This work

P-This work Sn+P-This work

Sb-Stanford

P&As-Stanford

P-LASSE

Sb-JOB-LMA

P-JOB-LMA

Sb-JOB-RTA

P-JOB-RTA

As-JOB-RTA

P-NDL

As-LSA

Rs (Ω/)

Depth (A)

Sb-RTA-melt

P-RTA-melt1E15/cm2 dose

1E16/cm2 dose

P-FLA

Trumble, Bell Labs, 1959

7/15/2015 49

Excico P-LMAStanford Sb-LMA

IBM Sb-RTA

As-MLD

As-LSAJOB Sb-LMA

P-RTA


Marketing, Sales &

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50

1

10

100

1000

10000

100000

1000000

10000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1+761

10

100

1000

10000

100000

1000000

10000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1+57

1

10

100

1000

10000

100000

1000000

10000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1+38

1

10

100

1000

10000

100000

1000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1+20

1

10

100

1000

10000

100000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1+001

10

100

1000

10000

100000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1-18

1

10

100

1000

10000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1-36

1

10

100

1000

10000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

1

10

100

1000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

1

10

100

1000

60 60.5 61 61.5 62 62.5 63 63.5

1

10

100

60 60.5 61 61.5 62 62.5 63 63.5

JB1-55

JB1-74

JB1-92

JB1-111

Increasing

Laser Power

JB1+40 (Phos implant)


Marketing, Sales &

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51

1

10

100

1000

10000

100000

1000000

10000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2+76

Increasing

Laser Power

1

10

100

1000

10000

100000

1000000

10000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2+57

1

10

100

1000

10000

100000

1000000

10000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2+38

1

10

100

1000

10000

100000

1000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2+20

1

10

100

1000

10000

100000

1000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2+00

1

10

100

1000

10000

100000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-18

1

10

100

1000

10000

100000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-36

1

10

100

1000

10000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-55

1

10

100

1000

10000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-74

1

10

100

1000

60 60.5 61 61.5 62 62.5 63 63.5

JE2-921

10

100

60 60.5 61 61.5 62 62.5 63 63.5

JE2-111

JE2+40

(Sb implant)


Marketing, Sales &

Technology)

52

1

10

100

1000

10000

100000

1000000

10000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1-40+76

JB1-40 (Phos+Sn implants)

Increasing

Laser Power

1

10

100

1000

10000

100000

1000000

10000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1-40+57

1

10

100

1000

10000

100000

1000000

10000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1-40+38

1

10

100

1000

10000

100000

1000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1-40+20

1

10

100

1000

10000

100000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1-40+00

1

10

100

1000

10000

100000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1-40-18

1

10

100

1000

10000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1-40-36

1

10

100

1000

10000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1-40-55

1

10

100

1000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JB1-40-74

1

10

100

1000

60 60.5 61 61.5 62 62.5 63 63.5

JB1-40-92

1

10

100

60 60.5 61 61.5 62 62.5 63 63.5

JB1-40-111


Marketing, Sales &

Technology)

53

1

10

100

1000

10000

100000

1000000

10000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-40+76

Increasing

Laser Power

1

10

100

1000

10000

100000

1000000

10000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-40+57

1

10

100

1000

10000

100000

1000000

10000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-40+38

1

10

100

1000

10000

100000

1000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-40+20

1

10

100

1000

10000

100000

1000000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-40+00

1

10

100

1000

10000

100000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-40-18

1

10

100

1000

10000

100000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-40-36

1

10

100

1000

10000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-40-55

1

10

100

1000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-40-74

1

10

100

1000

60 60.5 61 61.5 62 62.5 63 63.5

Series1

JE2-40-92

1

10

100

60 60.5 61 61.5 62 62.5 63 63.5

JE2-40-111

JE2-40

(Sb+Sn implants)

Bulk Trends – Mobility

54

0

20

40

60

80

100

120

140

160

180

200

0 0.5 1 1.5 2

cm

2/V

-s

J/cm2

P Sn Mobility

P Mobility

Sb Sn Mobility

Sb Mobility

Sn+P degrades electron

mobility so enhances hole

mobility?

Sn+Sb enhances electron

mobility so degrades hole

mobility?

Layer Mobility

55

1

10

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0 100 200 300 400 500

Depth (A)

Layer Mobility: Sb and Sn+SbSb 1.4, Measured

Sb 1.1, Measured

1

10

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10000

0 100 200 300 400 500

cm

2/V

-s

Sb Sn 1.6, Measured

Sb Sn 1.4, Measured

Sb Sn 1.1, Measured

7/15/2015 56

See large variation in reported Ge electron & hole mobilities reported in the literature!

Ge-Cz

U of Tokyo

Electron mobility

Hole mobility

H2 anneal

P or As

Excico

P-JOB laser

Sb-JOB laserB-JOB laser

IBM

50%

SiGe

p+Fin

Sn+Sb

Sn+P

P

Sn


• Experimentation

• Results

• Summary: – Laser-LPC (Liquid Phase Crystallization) critical to achieve controlled n+

USJ down to sub-10nm with high dopant activation without diffusion.

– Best reported Ge n+ USJ activation level of 1E21/cm3 at 10nm is for Sb

implant with laser-LPC

– Best reported Ge n+ USJ activation level of 3-5E20/cm3 at 10-40nm is

for P implant with laser-LPC.

– Sn implant can be engineered to:

• Improve Electron Mobility by 2x and uniform depth with Sb implant n+ doping

• Is neutral to degrade Electron Mobility by 3x with P implant n+ doping.

– Next try Sn implant for Ge p+ USJ Hole Mobility Enhancement (B, BF2,

B18, In, Ga)


Marketing, Sales &

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Documents

P, Sb and Sn Ion Implantation with Laser Melt-LPC (Liquid ...€¦ · Rs (Ω/ ) Depth (A) Sb-RTA-melt P-RTA-melt 1E15/cm2 dose 1E16/cm2 dose. Trumble, Bell Labs, 1959 7/15/2015 18