Palaniia Cv New

7/30/2019 Palaniia Cv New

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CURRICULUM VITAE

Educations Credentials

SL.

No

Qualification Institution Year of

Passing

Marks

1. Ph.D (4th

Year)

(Laser assisted surface

engineering of a-Si for

Photovoltaics)

Precision Engineering and

Instrumentation

Laboratory,(PEIL)

Department of Mechanical

Engineering,

Indian Institute of Technology

Madras (I.I.T MADRAS)

Registered in

July :2006

(In Progress)

CGPA: 8.8

2. M.E (ManufacturingEngineering ) Anna University July 2006 79.1%(with

Distinction)

3. B.E(Production

Engineering)

University of Madras April 2004 79.5%

(with

Distinction &

University

Rank holder)

4. Higher Secondary Tamil Nadu state board March 2000 81%

5. SSLC Matriculation April 1998 77%

I.A.PALANI

Plot no: 117, New No: 2\328,

4th Cross Street,

Kandaswamy nagar

Palavakkam, Chennai

Tamilnadu, India 600041.

Phone number : +91-044-24485749(Res)

+91-044-22575712(Off)

Mobile :91-9444215452

Email- [email protected]


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CURRICULUM VITAE

Research Experience:

Position Department and

Institute

Period

Phd Research Scholar

Half Time Teachning and

Research Assistant (HTRA)

Dept of Mechanical

Engineering, IIT madras,

India

July 2006 - December 2006

National Doctoral fellow

under AICTE Delhi

Dept of Mechanical

Engineering, IIT madras,

India

December 2006 June 2008

Special Research Scholar Laser laboratory,

Graduate School of

Information Science and

Electrical Engineering,

Kyushu University,

Fukuoka, Japan

July 2008- June 2009

National Doctoral fellowunder AICTE Delhi

PEIL, Dept of MechanicalEngineering,

IIT madras, India

July 2009- till date

Ph. D research:

Laser assisted surface engineering of a-Si for Photovoltaic applications

In the recent technological advancement there is a rapid usage of semiconductors in

many areas which includes from microchips to photovoltaic application such as solar cells.

Conventionally, photovoltaic cells are made with a crystalline silicon wafers to achieve highefficiency. However the resulting cost is high and overall size is limited. An alternative cost-

effective approach may be to consider a thin-film poly-crystalline wafers combined with a

laser annealing technique. Crystallization and grain growth technique can be used to improve

the cell efficiency and lowering the cost of the solar cells and microchips. The surface

modification of silicon by using a laser beam is of great interest. Among the laser annealing

technique solid-state laser needs high attention due its advantages over excimer lasers.

The Research study focuses on influence of wavelengths and beam profiles of a pulsed

Nd3+

:YAG laser on the formation of polycrystalline silicon (poly-Si) on a-Si thin film is

investigated. Two sets of samples of amorphous-Silicon (a-Si) thin-films deposited on glass

(a-Si/glass) and crystalline Si (a-Si/c-Si) substrates were treated with different laser-fluence

values to produce a highly textured crystalline, which is suitable for photovoltaics. After the

laser treatment, the films were analyzed by a Scanning Electron Microscope (SEM), the

Raman spectroscopy technique, AFM, Photoconductivity and the resistance measurement

technique. A theoretical simulation based on thermal modeling was performed to understand

the mechanism of crystallization.


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CURRICULUM VITAE

Major key investigation of the Research work

1. Laser annealing of a-Si with three different harmonics of pulsed Nd: YAG laser

2. Flat-top beam profile annealing of amorphous silicon films with second and third

harmonics of pulsed Nd:YAG laser :3. Investigation on behavior of a-Si with Pico second laser annealing:

4. Laser annealing and subsequent laser nanotexturing of a-Si5. Solid diffused Laser doping(SDLD) of a-Si and ZnO with Sb6. Preliminary investigation on CO2 based laser annealing and LIBWE(laser induced

backside wet etching) of silicon:

Academic Projects Done:

M.E (Manufacturing Engineering): Experimental study of hot cracking in welding ofD9 alloy

Summary: The D9 (Austenitic stainless steel) is used in fuel clad and wrapper

application of fast breeder test reactor since it has high resistance to irradiation induced

swelling and can withstand a temperature above 700k. This D9 is highly susceptible to hot

cracking during welding during some variation in a solidification rate . The main aim of the

project was to check the hot cracking susceptibility of the material using varestraint and trans

varestraint test. In order to predict the effect of composition on hot cracking 7 heats of D9

were prepared by varying the composition and they were cold worked to 20%.. The different

cracking parameters, such as Total Crack length, Maximum crack length, threshold strain and

the Brittleness Temperature Range (BTR). The metallographic study were done to evaluate

the effect of composition .Finally the composition were optimized based on different crackingcriterion..

B.E (Production Engineering): Design and fabrication of industrial ball size separator

Summary: The main objective of the project is to develop a setup to inspect and separate the

ball-bearing balls (10,15,20mm) according to the size .The inspection done manually

consume high inspection time but by using this setup the inspection time was considerably

reduced and due to this the production cost will decrease. The pneumatic actuators the key

components of the setup. The fabrication was made as per the design. Around 55-60 ball were

separated per minute.


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CURRICULUM VITAE

Research Publications:

International Journal publications:

[1] I.A.Palani, N.J.Vasa, M.Singaperumal, T.Okada Influence of laser wavelength and

beam profile on Nd3+

:YAG laser assisted formation of polycrystalline Si films, Thin solid

films (Accepted 10.1016/j.tsf.2009.12.003).

[2] I.A.Palani , Nilesh.J.Vasa , M. Singaperumal Crystallization and ablation in

annealing of amorphous-Si thin-film on glass and crystalline-Si substrates irradiated by third

harmonics of Nd3+

:YAG laser:International Journal of material Science in semiconductor

processing (2008), Vol 11, pp 107-116.

[3] N.J.Vasa, I.A.Palani, M.Singaperumal, T.Okada Influence of Nd3+

:YAG Laser Beam Profiles onAnnealing and Nano-Texturing of Amorphous-Silicon Thin Films, Transactions of the Materials

Research Society of Japan (Accepted

[4] I.A.Palani , N.J.Vasa, S.Kanmanisubbu, J.Ramkumar & M.Singaperumal Laser

based surface processing of engineering materials - state of art:International Journal of

design and manufactuirng technologies ( July 2008), Vol 2, pp 1- 9

[5] I.A.Palani, N.J.Vasa, M.Singaperumal, T.Okada Investigation on laser-annealing andsubsequent laser-nanotexturing of amorphous silicon (a-Si) films for photovoltaic

application, Journal of laser micro and Nano Engineering (Revised and Submitted).

International Conference publications:

[1]. I.A.Palani, Nilesh.J.Vasa, M.Singaperumal, T.Okada Investigation on Solid Diffused

Laser Doping (SDLD) of a-Si and ZnO for functional device application The 10th

International confrence on laser ablation (COLA 09).Nov 21st

-27th

2009, Singapore.

[2]. I.A.Palani, Nilesh.J.Vasa, M.Singaperumal, T.Okada Investigation on laser-

annealing and subsequent laser Nano texturing of amorphous silicon for photovoltaic

application The 5th International congress on laser advanced material processing (LAMP09). June29

thto July 2

nd2009, Kobe, Japan.

[3] I.A.Palani, Nilesh.J.Vasa, M.Singaperumal Investigation on effect of Nano and Pico

Second laser pulse in annealing of amorphous silicon films by pulsed Nd3+

:YAG laser 2nd

International and 23rd All India Manufacturing Technology, Design and Research

Conference (AIMTDR08) ,Dec 15-17th

2008,Chennai, India.

[4]I.A.Palani , Nilesh.J.Vasa , M. Singaperumal Investigations on Laser Interaction in

Annealing of Amorphous Silicon Films by Pulsed Nd:YAG Laser, 23rd ASPE (American

Society for Precision Engineering) Meeting and 12th International Conference on Precision

Engineering, October 19-24, 2008, Portland Marriott Downtown Waterfront Hotel, Portland,

Oregon (USA)

[5] I.A.Palani, Nilesh.J.Vasa, M. Singaperumal Investigations on ablation threshold in

annealing of silicon films by pulsed Nd: YAG laser, International Conference on advances

in manufacturing technology(ICAMT07), 6-8 Feburary 08,Indian Institute of Tecnology

Madras,India.

[6] I.A.Palani , Nilesh.J.Vasa , M. Singaperumal Investigation on Annealing of Silicon

Films Using Pulsed Nd3+:

YAG Laser, International Conference on Precision,Meso, Micro

and Nano Engineering (COPEN07), 13th &14th December07,College of Engineering,

Trivandrum.


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CURRICULUM VITAE

[7] M.Singaperumal, Nilesh.J.Vasa, Palani.I.A Pulsed solid-state laser induced annealing

of amorphous-Si thin-films on different substrates SPIE, OPTIFAB (2009)11-14 May

2009,Rochester Riverside, New York, USA

[8] Nilesh.J.Vasa, Palani.I.A, Kona.R, M. Singaperumal Development of optical gas

sensor for emission monitoring , 9th

International Symposium on measurements and quality

control (9th ISMQC), 21st -24th November 2007, IIT Madras

National Conference publications:

[1] I.A.Palani, Nilesh.J.Vasa, M.Singaperumal, T.Okada Investigation on production

of textured crystalline silicon films using solid state Nd3+:YAG laser for Photovoltaic

application National conference on design and Manufacturing issues in automotive and

allied industries , July 10-11,Chennai, India.

[2]I.A.Palani, Nilesh.J.Vasa, M.Singaperumal, M.Highashihata, T.Okada Invetgstaion

on super lateral growth in pi-beam annealing of amorphous silicon films using pulsed

Nd3+;YAG laserJapanese Society of Applied Physics, Mar30th

to April 4th

2009,Tskuba

,Japan

[3] I.A.Palani, Nilesh.J.Vasa, M.Singaperumal, T.Okada Comparative investigation on

lateral crystallization in annealing of a-Si films using second (532nm), third (355nm) and

fundamental harmonics (1064nm) of pulsed Nd3+

: YAG laser Kyushu university branch

meeting of Applied Physics Society ,Nov 29-30,Miyazaki ,Japan

[4]I.A.Palani , Nilesh.J.Vasa , M. Singaperumal Study on Feasibility of Pulsed Nd:YAG

laser in Annealing Of Silicon Films , National Conference Of Research Scholars In

Mechanical Engineering (NCRSME 07), 23rd

-24th

March 2007, IIT Kanpur.

[5] Palani.I.A , V.Shankar, G.Sreenivasan, K.Subramanian ,Experimental study of Hot

cracking in Welding of D9I alloy National conference on Advances in manufacturing and

research Conference (Amara 06), 23rd March 2006, PSNA college Of Engineering

,Dindugul, Tamilnadu.[6] Palani.I.A , V.Shankar, K.S.Ramkumar , Experimental study of Hot cracking in

Welding of D9I alloy,National Conference on contemporary approaches in Design and

Manufacturing (CADAM 06),25th

April 2006, A.C.college of Engineering and technology

,Karaikudi , Tamilnadu.

AWARDS AND CREDITS :

1. Awarded Kyushu university Friendship scholarship 2008-2009 to conduct Research studyin Graduate School of Information Science and Electrical Engineering for a Period of

One year(July 2008- June 2009).

2. Awarded National Doctoral Fellowship 2006-2007(NDF 2006-07) from All India Councilfor Technical Education (AICTE)

3. Awarded Half time Teaching and Research Assistantship (HTRA) from I.I.T Madras

4. Awarded university rank from University of Madras in B.E.(Production Engineering)

5. B.E curriculum project was selected under student Project Scheme from Tamilnadu StateCouncil for Science and Technology and Rs 4000/- was awarded.


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CURRICULUM VITAE

SOFTWARE EXPOSURE:

Languages Visual basic 6.0, C

CAD tools Auto Cad 2004, Unigraphics Nx2

Packages Matlab, Femlab

PERSONAL PROFILE:

Date of Birth : 28-03-1983.

Sex : Male.

Nationality : Indian.

Fathers Name : Dr.P.Iyamperumal.

Mothers Name : Mrs.M.Santhi Perumal.

Languages known : Tamil, English.

Official addresses : Precision Engineering and

Instrumentation Laboratory

Department of Mechanical Engineering

Indian Institute of Technology Madras

Chennai, TamilnaduIndia 600036.

Phone no: +91 044 22575712/22575711

.

REFERENCES

Dr. Nilesh. J. Vasa

Associate Professor and Head

Department of Engineering Design

IIT Madras, Chennai

Tamilnadu, India 600036

Ph: (+91) 044 - 22574706/22575711

E-mail:[email protected]

Prof. M. Singaperumal

Dean (Administration), Head of the Lab

Precision Engineering & Instrumentation Lab

Department of Mechanical Engineering

IIT Madras, Chennai

Tamilnadu, India 600036

Ph: (+91) 044 - 22574678/22575711

E-mail: [email protected]

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