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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015 Features Transformerless direct transducer driver Programmable to transducer frequencies between 38kHz and 72kHz Supply voltage independent performance Optimized short & long range performance by: active and passive damping mechanisms sensitivity time control Fully integrated digital signal conditioning Programmable transducer voltage & burst length Programmable receiver amplifier Bi-directional serial digital interface Supply for external controller (3.3V / max. 10mA) Transducer diagnosis information Embedded EEPROM for calibration data Chip ID for traceability Applications Ultrasonic park assist systems (USPA, PAS,...) Industrial distance measuring Robotics Ordering Information Product ID Temp. Range Interface Package E524.07 -40°C to +105°C Serial QFN20L4 General Description The device builds the core for a robust and easy-to-handle distance measurement system, while offering flexibility for customer applications. A driver unit stimulates the direct connected ultrasonic trans- ducer. Driver frequency, transducer voltage, burst length, amplifier gain and other parameters are user configurable. Active and passive damping mechanisms combined with STC (Sensitivity Time Control) optimize short and long range per- formance. The received echo signal is amplified, converted and digitally processed. After processing the signal can be read out. The E524.07 supports a bi-directional 2-pin synchronous serial digital interface to communicate with an external µC. Application relevant settings can be stored in EEPROM during an End-Of-Line calibration by the customer. Typical Application Circuit VSUP GNDP VPROG Sensor module Control unit RSUP DSUP CSUP1 CSUP2 RPROG CK TDI DT TMS E524.07 VDRV CDRV *) for improved EMC GND VSUP_LINE DATA GNDD TMEN VDDD GNDA VDDA µC VDD Interface EUSART CVDDD CVDDA DRV1 DRV2 AINS AING Ultrasonic transducer C2 C1 CAINS*) RAINS*) RAING*) GNDIN CAING*) CDRV1*) CDRV2*) RDRV2*) RDRV1*) ELMOS Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. Elmos Semiconductor AG QM-No.: 25DS0118E.02

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

Features• Transformerless direct transducer driver• Programmable to transducer frequencies between 38kHz

and 72kHz• Supply voltage independent performance• Optimized short & long range performance by:

• active and passive damping mechanisms• sensitivity time control

• Fully integrated digital signal conditioning• Programmable transducer voltage & burst length• Programmable receiver amplifier• Bi-directional serial digital interface• Supply for external controller (3.3V / max. 10mA)• Transducer diagnosis information• Embedded EEPROM for calibration data• Chip ID for traceability

Applications• Ultrasonic park assist systems (USPA, PAS,...)• Industrial distance measuring• Robotics

Ordering InformationProduct ID Temp. Range Interface Package

E524.07 -40°C to +105°C Serial QFN20L4

General DescriptionThe device builds the core for a robust and easy-to-handle distance measurement system, while offering flexibility for customer applications.

A driver unit stimulates the direct connected ultrasonic trans-ducer. Driver frequency, transducer voltage, burst length, amplifier gain and other parameters are user configurable. Active and passive damping mechanisms combined with STC (Sensitivity Time Control) optimize short and long range per-formance.

The received echo signal is amplified, converted and digitally processed. After processing the signal can be read out. The E524.07 supports a bi-directional 2-pin synchronous serial digital interface to communicate with an external µC.

Application relevant settings can be stored in EEPROM duringan End-Of-Line calibration by the customer.

Typical Application Circuit

VSUP

GNDP

VPROG

Sensor moduleControl unit

RSUP DSUP

CSUP1 CSUP2

RPROG

CK

TDI

DT

TMS

E524.07

VDRV

CDRV

*) for improved EMC

GND

VSUP_LINE

DATA

GNDD

TMEN

VDDD

GNDA

VDDA

µC

VDD

Interface

EUSART

CVDDD

CVDDA

DRV1 DRV2 AINSAING

Ultrasonictransducer

C2 C1

CAINS*)

RAINS*)RAING*)

GNDIN

CAING* )

CDRV1*)

CDRV2*)

RDRV2*)RDRV1*)

ELMOS Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.

Elmos Semiconductor AG QM-No.: 25DS0118E.02

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

Pin Configuration

CK

DT

GNDD

VDDD

VSUP

VD

RV

GN

DA

VP

RO

G

GN

DP

VD

DA

DRV1

GNDIN

AING

AINS

DRV21

2

3

4

5

15

14

13

12

11

6 7 8 9 10

20 19 18 17 16

21 EDP

QFN20L4 (top view)T

ME

N

TD

I

TM

S

nc

nc

Pin DescriptionNo Name Type Description1 DRV2 HV_A_IO Driver output 2, has to be connected to transducer-GND2 DRV1 HV_A_IO Driver output 13 GNDIN S Analog ground for optimized EMC performance4 AINS A_I Positive signal input5 AING A_I Negative signal input6 TMEN D_I Test mode enable7 TMS D_I JTAG test mode select8 nc not connected to device, should be connected to PCB-GND9 nc not connected to device, should be connected to PCB-GND

10 TDI D_I JTAG data input11 CK D_I Serial interface clock, JTAG clock12 DT D_IO Serial interface data input/output, JTAG data output13 VDDD A_O Internal digital supply voltage14 GNDD S Digital ground15 VSUP S Supply voltage16 VPROG HV_A_IO Programming voltage interface17 GNDP S Power ground18 VDRV S Transducer driver output voltage19 VDDA A_O Internal analog supply voltage20 GNDA S Analog ground21 EDP Exposed die pad, has to be connected to PCB-GND

Explanation of Types:A = Analog, D = Digital, S = Supply, I = Input, O = Output, B = Bidirectional, HV = High Voltage

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

1 Block Diagram

Supply Transducer Driver

Oscillator

EUSART / JTAG Interface

CONTROL

AMP

DRV1 DRV2

AINS

AING

VSUP

VDDA

GNDA GNDD GNDP TMEN

VDRV

VDDD

Dig

ital

Filt

er

Receiver & Signal processing

CK TDI DT TMS

EEPROM VPROG

Oscillator

AD

C

GNDIN

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

2 Absolute Maximum RatingsStresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress ratings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this document is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliab-ility. All voltages referred to GNDP. Currents flowing into terminals are positive, those drawn out of a terminal are negative.

No. Description Condition Symbol Min Max Unit1 Supply Voltage VSUP -0.3 36 V2 Supply Voltage t < 500 ms VSUP -0.3 40 V3 Voltage at pin VPROG VPROG -0.3 36 V4 Voltage at pin VPROG t < 500 ms VPROG -0.3 40 V5 Voltage at digital pins

(CK, DT, TDI, TMS, TMEN)VD -0.3 3.6 V

6 Voltage at analog pins(AINS, AING)

VA -0.8 0.8 V

7 Internal digital supply voltage VDDD -0.3 3.6 V8 Internal analog supply voltage VDDA -0.3 3.6 V9 Voltage at pins DRV1, DRV2 and VDRV VDRV1, VDRV2,

VDRV-0.3 16 V

10 Ambient temperature TAMB -40 105 °C11 Junction Temperature TJ -40 125 °C12 Storage Temperature TSTG -40 125 °C

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

3 ESD and Latchup

3.1 ESD ProtectionNo. Description Condition Symbol Min Max Unit

1 ESD HBM at pin VSUP, IO1) HBMVSUP, IO +/- 4 kV2 ESD HBM at all other pins1) HBMPINS_OTHER +/- 2 kV3 ESD CDM at pins near corners

(Pins 1,5,6,10,11,15,16,20)2)CDMPINS_EDGE +/-

0.75kV

4 ESD CDM at all other pins2) CDMPINS_OTHER +/- 0.5 kV1) According to AEC-Q100-002 (HBM) chip level test2) According to AEC-Q100-011 (CDM) chip level test

3.2 Latch-upLatch-up performance is validated according JEDEC standard JESD 78 in its valid revision.

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

4 Recommended Operating Conditions• Parameters are guaranteed within the range of recommended operating conditions unless otherwise specified.• The first electrical potential connected to the ASSP must be GND.• In the operating range from VSUPPOR ... 7V and 18V ... 36V function is guaranteed with limited parameters.

No. Description Condition Symbol Min Typ Max Unit1 Supply Voltage VSUP 7 - 18 V2 Programming voltage for EEPROM at pin

VPROGVPROG 23 25 27 V

3 DC Input Voltage AINS/AING -0.8 - 0.8 V4 Input Current AINS/AING -20 - 20 mA5 Operating Temperature Range TOPR -40 - 105 °C

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

5 Electrical Characteristics• VVSUP = +7V to +18V• TOPR=-40°C to + 105°C, unless otherwise noted.• Typical values are at VVSUP=12.0V and Tamb=+25°C.• Positive currents flow into the device pins.

5.1 Supply and Power-On-ResetNo. Description Condition Symbol Min Typ Max Unit

1 Current consumption at VSUP F_DRV_ADJ=fDRV,ADJ,VDRV_CFG='1000',t>tD_nom

IVSUP - 4 - mA

2 Worst case current consumption at VSUP F_DRV_ADJ='11111111',VDRV_CFG='1111',t>tD_nom

IVSUP_WC - - 7 mA

3 Internal generated analog supply external CVDDA con-nected

VDDA 3.0 3.3 3.6 V

4 Current out of VDDA in case of short to GND IVDDA,SHORT -30 - - mA5 Internal generated digital supply external CVDDD con-

nectedVDDD 3.0 3.3 3.6 V

6 Output current out of VDDD external CVDDD con-nected

IVDDD -10 - - mA

7 Current out of VDDD in case of short to GND IVDDD,SHORT -85 - - mA8 Level at VSUP: threshold from operation

mode to reset stateIVDDD=-10mA VSUPPOR - - 4.5 V

9 Start-up time at VDRV for typical settings1) VDRV_CFG='1000', VDRV_OK='1',CDRV=2.2μF

tD_nom 10 15 25 ms

10 Start-up time at VDRV for VSUP=7V ... 18V and VDRV_CFG=any1)

VDRV_CFG=any,VDRV_OK='1', CDRV=2.2μF

tD_7V - - 45 ms

11 Start-up time until communication via IO is possible*)

tD_IO - 60 450 μs

*) Not tested in production1) Load conditions different for production test. Doubling CDRV results in doubling the start-up time.

5.1.1 Transducer driver output voltage

No. Description Condition Symbol Min Typ Max Unit1 Driver supply voltage for typical setting VDRV_CFG='1000' VDRV 10.5 11 11.5 V2 Driver supply voltage step size VDRVSTEP 0.3 0.5 0.7 V3 Minimum driver supply voltage VDRV_CFG='0010' VDRVMIN 7.5 8 8.5 V4 Maximum driver supply voltage VDRV_CFG='1111' VDRVMAX 13.9 14.5 15.1 V5 Number of steps NVDRV - 13 -6 Driver supply voltage ok level, high VDRV_CFG='1000' VDRV_OK_H 0.85 0.9 0.96 VDRV

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

No. Description Condition Symbol Min Typ Max Unit7 Driver supply voltage ok level, low VDRV_CFG='1000' VDRV_OK_L 0.75 0.8 0.85 VDRV8 Short circuit current IVDRV_SHORT - - 12 mA

5.2 Transducer DriverNo. Description Condition Symbol Min Typ Max Unit

1 High-side driver On-Resistance at DRV1*) common functionaltest of diode and RON_HS_DRV1

RON_HS_DRV1 - 25 - Ω

2 High-side driver On-Resistance at DRV2 RON_HS_DRV2 10 25 50 Ω3 Low-side driver On-Resistance at DRV1*) common functional

test of diode and RON_LS_DRV1

RON_LS_DRV1 - 50 - Ω

4 Low-side driver On-Resistance at DRV2 RON_LS_DRV2 15 50 100 Ω5 Damping resistance RD 1.8 2.2 2.6 kΩ

*) Not tested in production

No. Description Condition Symbol Min Typ Max Unit1 Driver output frequency adjustment range to be adjusted by

F_DRV_ADJ @ 25°CfDRV 38 - 72 kHz

2 Step width of frequency adjustment Temperature=25°C LSBf_DRV 200 300 400 Hz3 Temp coefficient of driver output frequency*) TCf_DRV_L - -300 - ppm/K4 Factory adjusted driver output frequency Temperature=25°C fDRV,ADJ 57.00 58.00 59.00 kHz

*) Not tested in production

5.3 Receiving path

5.3.1 Analog Amplifier

No. Description Condition Symbol Min Typ Max Unit1 Minimum gain @ fDRV=58 kHz GMIN 56 60 64 dB2 Maximum gain @ fDRV=58 kHz GMAX 79 83 87 dB3 Step size1) @ fDRV=58 kHz, (3) ΔGC 0.25 0.742 1.25 dB4 Number of steps NG - 31 -5 Input Impedance

AINS to GNDAAING to GNDA

Temperature=25°C RIN 75 100 125 kΩ

6 Noise Level*) @ fDRV=58 kHz eN - 6.9 - nV/

*) Not tested in production1) monotony guaranteed by design

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

5.3.2 Digital Filter

No. Description Condition Symbol Min Typ Max Unit1 Center frequency fc,filt - 1 - fDRV

2 -3dB-Bandwidth N_PULSES=any BW,DFILT - 0.052 - fDRV

5.3.3 Sensitivity Time Control (STC)

No. Description Condition Symbol Min Typ Max Unit1 Sum of digital STC gain, when off STC_CFG='0' SG_STC_OFF - 0 - dB2 Sum of digital STC gain STC_CFG='1' SG_STC - 12 - dB3 Number of STC gain steps STC_CFG='1' NSTEP_STC - 16 -4 Step durations TSTEP_STC - 17 - 1/fDRV

5 Start of digital gain steps1) TSTART_STC - 120 - 1/fDRV1) Example: For fDRV=58kHz: TSTART_STC=120*1/fDRV=2.069ms

5.4 2-pin synchronous serial digital interfaceNo. Description Condition Symbol Min Typ Max Unit

1 Voltage threshold to detect high level at pins: CK, DT

VDDD = 3.3 V VIH - - 2.1 V

2 Voltage threshold to detect low level at pins: CK, DT

VDDD = 3.3 V VIL 0.7 - - V

3 Output Voltage 'high' at pin DT IOUT = 1 mAVDDD = 3.3 V

VOH 2.6 - - V

4 Output Voltage 'low' at pin DT IOUT = -1 mAVDDD = 3.3 V

VOL - - 0.4 V

5 Pull down current at CK, DT CK = VDDD;DT = VDDD, driver stage disabled

IPD 20 - 35 μA

No. Description Condition Symbol Min Typ Max Unit1 CK frequency fCK 0.1 - 1.1 MHz2 Switch off DT output driver after slave data

transmissionTCK2TRI - 2 - 1/(144

fDRV)3 Reset internal shift register after idle time on

CKTTIMEOUT - 128 - 1/(144

fDRV)4 Programming time TPROG 1000 1100 - 1/fDRV

5 'SEND'/'RECEIVE' Repetition rate TREP - 1010 - 1/fDRV

6 Pulse width low frequency calibration pulse TCAL - 288 - 1/fDRV

7 Start/stop pulse of calibration period TCALS - 6 - 1/fDRV

8 Delay time between 'CAL_PULSE' command and begin of first calibration pulse

TCALD - 12 - 1/fDRV

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

5.4.1 EEPROM commands

5.4.1.1 EEPROM configurationNo. Description Condition Symbol Min Typ Max Unit

1 Amplifier gain adjustment AMP_GAIN 16 162 Transducer driver output voltage configuration VDRV_CFG 8 83 Driver frequency calibrated to

fDRV=fDRV,ADJ

F_DRV_ADJ 0 191

4 Number of burst pulses N_PULSES 1 15 Electronic damping setting EL_DAMP 0 06 Damping resistor RD_CFG 1 17 Sensitivity time configuration STC_CFG 1 1

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

6 Typical Operating Characteristics

-50 -25 0 25 50 75 100 125 150

45

46

47

48

49

50

Driver Frequency vs. Temperature(FDRV adjusted to 48kHz @ 25°C)

Temp. / °C

Drive

r Fr

eque

ncy

/ kH

z

-50 -25 0 25 50 75 100 125 150

55

56

57

58

59

60

Driver Frequency vs. Temperature(FDRV adjusted to 58kHz @ 25°C)

Temp. / °C

Drive

r Fr

eque

ncy

/ kH

z

-50 -25 0 25 50 75 100 125 150

55

56

57

58

59

60

Driver Frequency vs. Temperature(FDRV adjusted to 58kHz @ 25°C)

Temp. / °C

Dri

ver

Freq

uenc

y /

kHz

-50 -25 0 25 50 75 100 125 150

48

49

50

51

52

53

54

Driver Frequency vs. Temperature(FDRV adjusted to 51.2kHz @ 25°C)

Temp. / °C

Dri

ver

Freq

uenc

y /

kHz

-50 -25 0 25 50 75 100 125 150

49

50

51

52

53

54

Driver Frequency vs. Temperature(FDRV adjusted to 51.7kHz @ 25°C)

Temp. / °C

Dri

ver

Freq

uenc

y /

kHz

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

6

7

8

9

10

11

12

13

14

15

16

Transducer voltage vs. VDRV_CFG

VDRV_CFG / value

Tra

nsdu

cer

volt

age

/ V

0 50 100 150 200 250

20

30

40

50

60

70

80

90

Driver Frequency vs. F_DRV_ADJ

f_DRV_ADJ

Dri

ver

Freq

uenc

y

fDRV,max

fDRV,min

191

/ LSB

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

7 Functional Description

7.1 OverviewThe principle of ultrasonic distance measuring is based on transmitting a pulse and measuring the reflection time of the received pulse as shown in Figure 7.1-1. The relationship between the distance from the transducer to the object L and the time T it takes to receive the echo is L = C * T/2, where C is the velocity of sound. The IC requires only one transducer, which acts as a transmitter and receives the reflected pulse with a time delay. The time delay is proportional to the distance to measure.

ControlCircuit

ReceivingCircuit

PulseTransmission

Circuit

UltrasonicSensor

(Transceiver)

Object

Distance L

Reflection Time T

Figure 7.1-1: Ultrasonic distance measuring

The E524.07 is connected via supply (VSUP) and ground (GND) from the ultrasonic module to the ECU. The IC supports a 2-pinsynchronous serial digital interface to communicate with an external µC. After the received echo signal is read out by the controller, the interpretation of this information is performed in the controller.

7.2 Supply and Power-On-ResetThe IC uses two internal regulators (VDDA and VDDD) as supplies for the internal circuits. An additional regulator generates a stable driver voltage (VDRV) over the complete supply voltage range (VSUP). The relationship of the power supplies is shown in Figure 7.2-1.

For recommended values of the used capacitors see chapter 8.2.

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

VDDA regulator

VDDD regulator

Supply block

CVDDA

VDDA

GNDD

GNDA

GND

VSUP

CVDDD

VDDD

VDRV regulator

CDRV

VDRV

GNDP

GND

GND

VDRV_CFG VDRV_OK

GNDIN

GND

Figure 7.2-1: Supply block

7.2.1 Analog supply

The analog supply VDDA requires an external blocking capacitor CVDDA. It is recommended to place the external capacitor as close as possible to the related pins VDDA and GNDA. VDDA is not intended to supply any external components. In case VDDA is shorted to GND, the output current will be limited to IVDDA,SHORT.

An additional analog ground GNDIN is for an improved application EMC behavior. It is internally connected to the GNDA.

7.2.2 Digital supply

The digital supply VDDD requires an external blocking capacitor CVDDD. It is recommended to place the external capacitor as close as possible to the related pins VDDD and GNDD. In case VDDD is shorted to GND, the output current will be limited to IVDDD,SHORT.

VDDD can be used to supply external components. The maximum output current is IVDDD.

7.2.3 Driver supply

The driver supply VDRV requires an external buffer capacitor CDRV. It is recommended to place the external capacitor as close as possible to the related pins VDRV and GNDP. This capacitor stores the energy needed during an ultrasonic burst. VDRV is not intended to supply any external components except the transducer.

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

7.2.4 Power up sequence

The IC begins to power up once an external voltage is supplied to the pin VSUP. A power-up diagram is shown in Figure 7.2.4-1. The sequence can be described as follows:

1. An external supply voltage is supplied to pin VSUP.2. After the Power-on-reset (POR) signal to the digital part is released, the digital part is running and communication via the

interface is possible. The receiver path is enabled to receive signals.3. READ_STATUS bit6 of the VDRV regulator goes high and the transducer driver can be switched on. The start-up time tD_nom

depends on the supply voltage VSUP, the VDRV regulator output voltage (set by VDRV_CFG) and on the external capacitorCDRV. Doubling CDRV results in doubling the start-up time.

VSUP

POR

VDRV_OK_H

1 2 3

tD_nom

tD_IO

Figure 7.2.4-1: Power up sequence

For typical and maximum CDRV (2.2μF and 4.7μF) as well as typical and worst case VVSUP (12V,18V and 7V) the following figure shows the start-up time over VDRV:

7 8 9 10 11 12 13 14 150

10

20

30

40

50

60

Typical start-up time over VDRV

t_D_nom @ VSUP=(12V,18V), CDRV=2.2μF

t_D_nom @ VSUP=(7V), CDRV=2.2μF

t_D_nom @ VSUP=(12V,18V), CDRV=4.7μF

t_D_nom @ VSUP=(7V), CDRV=4.7μF

VDRV in [V]

t_D

_nom

in [m

s]

Figure 7.2.4-2: Typical start-up time over VRDV

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

7.2.5 Limited performance between VSUPmin and VSUPPOR

The digital part is running, when the power-on-reset is high. When the power-on-reset goes from high to low state, the digital part is in reset state. This results in full functionality down to VSUPmin and a still working digital part down to VSUPPOR. Between VSUPmin and VSUPPOR the performance is limited, but communication with the control unit is still possible.

High

LowVSUP

POR

● Digital part in reset● no communication

● Digital part running

Figure 7.2.5-1: Power-on-reset functionality

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

7.3 Transducer DriverWhen the transducer driver is activated by the 'SEND', 'SEND4', 'SEND8', 'SEND12', 'SEND24' or 'SEND_WO_DAMP' command,the pins DRV1 and DRV2 are tied towards ground and VDRV respectively by internal switches alternately with the driver outputfrequency fDRV.

Transducer-GND has to be connected to DRV2.

VDRV

GND

DRV1 DRV2

VDRV

VDRV

GND

DRV1 DRV2

VDRV

State 1 State 2

Figure 7.3-1: Simplified transducer excitation

The driver can be adjusted to the transducer by performing the following steps.1. Adjust the driver frequency (F_DRV_ADJ)2. Select the number of burst pulses (N_PULSES)3. Adjust the transducer voltage (VDRV_CFG)4. Adjust the electronic damping (EL_DAMP)

For further details of EEPROM programming functions refer to Table 7.5.9-2.

During receiving DRV2 is directly tied to GND and DRV1 is tied to GND via two antiparallel diodes.

F2

F2, REC F1, REC

F1

DRV2

DRV1

F1, F2, REC, ON_RD

4

VDRV

Transducer Driver

ON_RD

Figure 7.3-2: Transducer full bridge

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Signal conditioning IC for directly driven ultrasonic sensors E524.07 PRODUCTION DATA – Jul 23, 2015

An internal damping resistor is used to decrease the ringing time, which results in an optimized short distance. The damping resistor is switched on during ringing, but switched off during sending the burst and echo detection. The value depends on the electrical parameters of the transducer and is set to a typical value.

If the damping resistor is not used at all (e.g. when using an application with an inductance) it can be switched off by RD_CFG.

7.3.1 Transducer driver frequency

The frequency fDRV can be adjusted by the EEPROM bits F_DRV_ADJ. The guaranteed adjustment range is defined by fDRV,MIN and fDRV,MAX. The typical step width is defined as LSBf_DRV,typ. The frequency is strictly monotonic increasing with increasing valueof F_DRV_ADJ. Before delivery the frequency is adjusted to fDRV,ADJ. The setting F_DRV_ADJ=0 corresponds to the minimum frequency that might be much lower than fDRV,MIN.

The frequency can be measured with the 'CAL_PULSES' command.

The procedure for adjusting the frequency at 524.07 should be as following:1. Read the actual value of F_DRV_ADJ2. Measure the actual frequency3. Calculate the difference fDIFF=target frequency-actual frequency4. Calculate the rough number n of steps corresponding to fDIFF by n=fDIFF/LSBf_DRV,typ

5. Adjust F_DRV_ADJ by n6. Repeat until the target frequency is reached7. Store the setting for F_DRV_ADJ by EE-Programming command.

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Required fDRV

> fmeasure

?

Measure Actual Frequencyfmeasure

= 288 / TCAL

Command CAL_PULSES

no yes

Required FrequencyReached?

Write to EEPROM with new Value for F_DRV_ADJ Command WRITE_EE

no

Read Existing Register Values of F_DRV_ADJ

F_DRV_ADJ = F_DRV_ADJ - 1

Program New Setting for F_DRV_ADJ Into EEPROM

Command PROG_EE

Command READ_EE

F_DRV_ADJ = F_DRV_ADJ +1

Required FrequencyReached?

yes

Finished

no

Command CAL_PULSESMeasure Actual Frequencyfmeasure

= 288 / TCAL

yes

Figure 7.3.1-1: Flow chart of frequency adjustment [524.07]

7.3.2 Number of burst pulses

The number of burst pulses is defined by the EEPROM setting N_PULSES. In general a burst with 10 pulses has a better per-formance in the short range while a burst with 16 pulses has a better performance in the long range.For most transducers with low driving frequencies (40-48kHz) it is recommended to use 10 pulses and for transducer with higher frequencies (58kHz) it is recommended to use 16 pulses.

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7.3.3 Transducer voltage

The voltage over the transducer is defined by the regulator output voltage VDRV and can be adjusted from VDRVMIN to VDRVMAX in VDRVSTEP steps by configuring VDRV_CFG. This configuration can be used to adjust the sound pressure level of the transducer.

Table 7.3.3-1: VDRV for different VDRV_CFG

VDRV_CFG Driver voltage VDRV0000, 0001, 0010 8.0V0011 8.5V0100 9.0V0101 9.5V0110 10.0V0111 10.5V1000 11.0V1001 11.5V1010 12.0V1011 12.5V1100 13.0V1101 13.5V1110 14.0V1111 14.5V

The start-up time of VDRV mainly depends on VSUP, VDRV_CFG and the external capacitor CDRV.

Figure 7.3.3-1 shows a typical start-up behavior at different VDRV_CFG settings and a discharging with 16 pulses at 30ms. TheVDRV_OK_H and VDRV_OK_L thresholds are also depicted for the three voltages.

The 'READ_STATUS' command can be used to check if the VDRV voltage is working properly.

Figure 7.3.3-1: Example of charging CDRV=2.2μF and discharging with 16 pulses @ VSUP=12V

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7.3.4 Electronic damping

An electronic damping algorithm after the burst pulses reduces the ringing time of the transducer. The optimum setting depends on the transducer characteristics and the EEPROM bits EL_DAMP.

The procedure for adjusting the electronic damping can be done as follows:1. Measure ringing time with EL_DAMP = 0 and 'SEND' command2. Increase EL_DAMP3. Measure ringing time with 'SEND' command4. Increase EL_DAMP as long as ringing time becomes lower using the 'SEND' command for measurement

If EL_DAMP=0, then no additional damping pulses are sent.

During calibration of EL_DAMP no close obstacle should be in front of the transducer.

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7.4 Receiving pathFigure 7.4-1 shows the receiver block diagram. The echo signal is picked up from the transducer at pins AINS and AING. The signal goes through a programmable gain stage first. After digitization, the signal is further processed by a digital filter. This reduces the sensitivity to unwanted signals outside the frequency band of the transducer.

The receiver starts to work after tD_IO.

Finally, the actual filter output value can be read out by 'READ_FILTER' command via 2-pin serial digital interface.

Ultrasonictransducer

AMP

AINS

AINGDig

ital

Filt

er

Receiver & Signal processing

AD

C

CONTROL

AM

P_G

AIN

ST

C_C

FGS

TC

_MA

X

Read filter value outvia serial interface

Figure 7.4-1: Block diagram of receiving path [524.07]

7.4.1 Analog Amplifier

Transducer output signal levels vary by type and application. The differential input of the amplifier minimizes pickup of unwanted signals. AINS input is typically used as signal input while AING input has to be connected to transducer GND.

The low incoming analog echo signal has to be amplified before it is converted by an ADC. The amplifier gain is program-mable with a range between GMIN and GMAX with ΔGC resolution to ensure an optimum amplifier output voltage range. Gain settings are programmed with AMP_GAIN and stored in EEPROM. The gain can be calculated using the following formula:

The amplifier output is internally connected to an ADC.

7.4.2 Analog to Digital Conversion (ADC)

The analog to digital converter (ADC) converts the analog signal into a digital signal and all further steps are processed digit-ally.

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7.4.3 Digital Filter

After an analog to digital conversion the signal is processed by a digital filter.Since the clock of the transducer driver and the ADC / filter clock are synchronized, the digital filter follows the sending fre-quency. The output of the digital matched filter (DMF) represents the envelope of the echo signal.

The driver frequency and the frequency of the digital filter together with the timing of the threshold depend on the oscillator frequency. The center frequency of the filter is shifted with the driver frequency temperature dependency. The bandwidth is scaled with frequency.

7.4.3.1 Filter characteristics

Figure 7.4.3.1-1: Filter frequency response at 48kHz Figure 7.4.3.1-2: Filter frequency response at 58kHz

7.4.4 Sensitivity Time Control (STC)

Sensitivity time control (STC) increases a digital gain over time, starting at TSTART_STC with an increment of ΔG_STC for NSTEP_STC steps every TSTEP_STC time steps. The maximum gain value is fix and results in the final sum of all steps SG_STC (see Figure 7.4.4-1).The STC can be activated by STC_CFG.

STC combined with a proper threshold setup is useful in:• Reduction of ground echoes at short range and increased amplitude at long range.• No overdrive at short range.

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[t]

Amplification [dB]

Analog gain

TSTART_STC

[t]

Amplification [dB]

TEND_MEAS

NSTEP_STC

STC_CFG = '0'

STC_CFG = '1'

Analog gain

TSTEP_STC

DG_STC

SG_STC

TSTART_STC

Figure 7.4.4-1: Sensitivity time control

After a measurement the STC is switched off (0dB).

Table 7.4.4-1: STC calculation table

stc_step 0 1 2 3 4 5 6 7 8 9factor 1,00 1,125 1,250 1,375 1,500 1,625 1,750 1,875 2,00 2,25dB 0,000 1,023 1,938 2,766 3,522 4,217 4,861 5,460 6,021 7,044dB / step 1,023 0,915 0,828 0,756 0,695 0,644 0,599 0,561 1,023

stc_step 10 11 12 13 14 15 16factor 2,500 2,750 3,000 3,250 3,500 3,750 4,000dB 7,959 8,787 9,542 10,238 10,881 11,481 12,041dB / step 0,915 0,828 0,756 0,695 0,644 0,599 0,561

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7.5 2-pin synchronous serial digital interfaceThe E524.07 supports a 2-pin synchronous serial digital interface with the following properties:

• 2-wire serial slave interface with bi-directional data line• 8 bit transfer• data is shifted in/out LSB first• data bits change on the leading clock edge for receive and transmit

0

CK

DT1 2 3 4 5 6 0 17

1 TCK2TRIf

CK

TTIMEOUT

Figure 7.5-1: 2-pin serial timing diagram

7.5.1 Command Overview

All available commands are listed in the following table. The last four bits (low nibble) describe the command itself. Some commands also provide additional specific data included in the first bits.

Table 7.5.1-1: Command Overview

Command Command description Hex value 8 bit modeSEND Send ultrasonic pulses 0x02SEND_WO_DAMP Send ultrasonic pulses without electronic damping 0x03RECEIVE Initiates a measurement sequence without preceding burst 0x04READ_FILTER Read current filter value 0x0EREAD_STATUS Read status 0x08READ_ID Read chip ID 0x@CCAL_PULSES Generate calibration pulse 0x09EE_READ Read EEPROM registers 0x@5 (*)

SET_EE_VOL Set EEPROM read voltage 0x@AEE_READ_SHADOW Read EEPROM shadow registers 0x@FEE_WRITE Write to EEPROM shadow registers 0x@6EE_PROGRAM Program EEPROM cells 0x07(*) @ indicates an address identifier, details are depicted in Table 7.5.9-1, Table 7.5.10.2-1 and Table 7.5.7-1.

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7.5.2 'SEND' Command

After receiving this command the ultrasonic transducer starts to send the burst pulses. The amount of pulses is configured with the command 'EE_WRITE'.

7.5.3 'SEND_WO_DAMP' Command

The command 'SEND_WO_DAMP' is functional identical with the 'SEND' command with one exception: after the burst pulses the electronic damping is inactive during this measurement (if enabled in EEPROM). Without damping the frequency devi-ation between the driver frequency and transducer resonance frequency can be analyzed. The result is valid after the 'SEND_WO_DAMP' command is finished and is read out with the command 'READ_STATUS'.

7.5.4 'RECEIVE' Command

The 'RECEIVE' command is functional identical with the 'SEND' command with one exception: no bursts are send out. All EEP-ROM configuration bits (compare Table 7.5.9-2) are used as after a send request.

7.5.5 'READ_FILTER' Command

The 'READ_FILTER' command loads the current filter value to the serial shift register and transmits them on the next interfaceaccess.

7.5.6 'READ_STATUS' Command

The command 'READ_STATUS' can be used for diagnosis functions. For example to get information about the transducer out-put voltage status or the result of the latest measurement without damping is transmitted. The meaning of all bits is described as follows:

Table 7.5.6-1: Read Status: Bits 4-0

Bit 4:0 Meaning01111 +11.7% frequency deviation between the transducer driver and its resonance frequency01110 +10.92% frequency deviation between the transducer driver and its resonance frequency...00001 +0.78% frequency deviation between the transducer driver and its resonance frequency00000 0.0% frequency deviation between the transducer driver and its resonance frequency11111 -0.78% frequency deviation between the transducer driver and its resonance frequency...10001 -11.7% frequency deviation between the transducer driver and its resonance frequency10000 -12.48% frequency deviation between the transducer driver and its resonance frequency

The frequency deviation between driver frequency and transducer resonance frequency is transmitted as a complement on two. Each digit equals 0.78% frequency deviation. The value is valid after the command 'SEND_WO_DAMP' has been executed.

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Table 7.5.6-2: Read Status: Bit 5

Bit 5 Meaning0 Result of frequency measurement is invalid1 Result of frequency measurement is valid

Table 7.5.6-3: Read Status: Bit 6

Bit 6 Meaning0 Transducer driver output voltage not above VDRV_OK_H

1 Transducer driver output voltage above VDRV_OK_H

Table 7.5.6-4: Read Status Bit 7

Bit 7 Meaning0 EEPROM programming voltage not for complete programming cycle within programming limits1 EEPROM programming voltage for complete programming cycle within programming limits

7.5.7 'READ_ID' Command

A 24 bit chip ID is transferred with the command 'READ_ID'. The following table shows the three ID commands:

Table 7.5.7-1: READ_ID

Command Data0x2C ID byte 20x1C ID byte 10x0C ID byte 0

7.5.8 'CAL_PULSES' Command

To calibrate the internal oscillator to the required transducer frequency a pulse with a defined width of TCAL is driven on the DT line after sending the command 'CAL_PULSES'. The following diagram shows the flow:

CK

DT

TCALS TCALS

TCALT

CALD

Figure 7.5.8-1: CAL_PULSES

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7.5.9 EEPROM organisation

For 'EE_READ', 'EE_READ_SHADOW' and 'EE_WRITE' commands the EEPROM is organized as depicted in the following table:

Table 7.5.9-1: EEPROM organisation

Block 'EE_READ' 'EE_READ_SHADOW' 'EE_WRITE2 0x25 0x2F 0x261 0x15 0x1F 0x160 0x05 0x0F 0x06

The following figure and configuration table show the contents of the 3 blocks:

Figure 7.5.9-1: EEPROM configuration

Table 7.5.9-2: EEPROM Configuration

Block Bits Function Description2 7 STC_CFG Sensitivity time control enable:

'0': off'1': on

2 6 RD_CFG Switching RD:'0': RD off'1': RD active

2 5:2 EL_DAMP Electronic damping setting (nonlinear increment)

2 1 N_PULSES Number of burst pulses:'0': 10'1': 16

2 0 F_DRV_ADJ[7] Driver frequency adjustment1 7:1 F_DRV_ADJ[6:0] Driver frequency adjustment1 0 VDRV_CFG[3] Driver supply voltage adjustment0 7:5 VDRV_CFG[2:0] Driver supply voltage adjustment0 4:0 AMP_GAIN Amplifier gain adjustment

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7.5.10 EEPROM commands

7.5.10.1 'EE_READ' CommandThe 'EE_READ' command loads the EEPROM contents into registers and transmits them on the next command. To verify a proper programming the EEPROM contents can also be loaded with a high or low read voltage. The read voltage is set with the command 'SET_EE_VOL'.Further details are depicted in Table 7.5.9-1.

7.5.10.2 'SET_EE_VOL' CommandThe read voltage for the EEPROM cells can be set to a low, high or nominal value to verify a proper programming. It should beset back to its nominal value after it was changed. The following table shows the possible settings:

Table 7.5.10.2-1: SET_EE_VOL

Command Read voltage0x0A nominal0x1A high0x2A low

7.5.10.3 'EE_READ_SHADOW' CommandThe 'EE_READ_SHADOW' command transmits the EEPROM shadow register on the next command.Further details are depicted in Table 7.5.9-1.

7.5.10.4 'EE_WRITE' CommandThe 'EE_WRITE' command is used to write new data to the internal EEPROM data latches/shadow register. The EEPROM con-sists of 3 blocks. The received data is transmitted to the shadow register after writing to block 2, this means a complete write access to the shadow register has to be a sequence of writing to block 0 followed by writing to block 1 and then block 2.

7.5.10.5 'EE_PROGRAM' CommandWhen choosing the functionality 'EE_PROGRAM', the EEPROM data bits will be programmed with the current shadow register contents. The whole procedure has to be finished by a waiting time of TPROG. During this time, the voltage of the Pin VPROG has to be set to VPROG. Otherwise, the EEPROM will not be programmed.

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8 Typical Applications

8.1 Typical Application Circuit E524.07The E524.07 supports a wide range of ultrasound transducers. Circuit diagrams may contain components not manufactured by Elmos Semiconductor AG, which are included as means of illustrating a typical application. Elmos Semiconductor does not endorse or warrant performance specifications beyond the Electrical Characteristics for the E524.07. Please contact Elmos Semiconductor for further assistance and application notes.

The typical operational circuit for the E524.07 is shown in Figure 8.1-1, Table 8.2-1 lists external components. Three wires (GND, VSUP and DATA) connect ECU and ultrasonic module.

If a programming of the EEPROM is not necessary Pin VPROG can be connected to GND.

VSUP

GNDP

VPROG

Sensor moduleControl unit

RSUP DSUP

CSUP1 CSUP2

RPROG

CK

TDI

DT

TMS

E524.07

VDRV

CDRV

*) for improved EMC

GND

VSUP_LINE

DATA

GNDD

TMEN

VDDD

GNDA

VDDA

µC

VDD

Interface

EUSART

CVDDD

CVDDA

DRV1 DRV2 AINSAING

Ultrasonictransducer

C2 C1

CAINS*)

RAINS*)RAING*)

GNDIN

CAING*)

CDRV1*)

CDRV2*)

RDRV2*)RDRV1*)

CDRV12*)

Figure 8.1-1: Application Circuit E524.07

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8.2 External Components E524.07

Table 8.2-1: Device values E524.07

No. Description Condition Symbol Min Typ Max Unit1 Serial resistor in supply line RSUP 90 100 110 Ω2 Reverse polarity protection diode BAS321 general pur-

pose diode or equival-ent

DSUP 200 VReverse

3 Blocking capacitor for supply line CSUP1 2.2 nF4 Blocking capacitor for supply line CSUP2 220 nF5 Storage capacitor for transducer

driverCDRV 2.2 4.7 µF

6 Serial resistor for VPROG line RPROG 10 kΩ7 Blocking capacitor for analog sup-

ply10%, 50V, ESR < 0.2Ω at 1MHz

CVDDA 70 100 130 nF

8 Blocking capacitor for digital supply 10%, 50V, ESR < 0.2Ω at 1MHz

CVDDD 1 µF

9 AC coupling capacitor for trans-ducer signal

C1 470 pF

10 AC coupling capacitor for trans-ducer signal

C2 470 pF

11 Filter resistor for improved EMC depends on PCB layout RAING 47 Ω12 Filter resistor for improved EMC depends on PCB layout RAINS 47 Ω13 Filter capacitor for improved EMC depends on PCB layout CAING - pF14 Filter capacitor for improved EMC depends on PCB layout CAINS - pF15 Filter capacitor for improved EMC depends on PCB layout CDRV1 - pF16 Filter capacitor for improved EMC depends on PCB layout CDRV2 220 pF17 Filter capacitor for improved EMC depends on PCB layout CDRV12 220 pF18 Filter resistor for improved EMC depends on PCB layout RDRV1 100 Ω

Filter resistor for improved EMC depends on PCB layout RDRV2 0 Ω

19 Transducer e.g. Murata Ultrasonictransducer

58 kHz

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9 Package ReferenceThe IC is available in a Pb free, RoHs compliant, QFN20L4 plastic package. Package outline and dimensions are according to JEDEC MO-220 K, variant VGGD-5.

Figure 9-1: Package Outline

Note 1: Typical thermal resistance junction to ambient Rth,ja is 45 °C/W, based on JEDEC standard JESD-51-2 (still air), JESD-51-5 (exposed pad soldered to PCB with thermal via's) and JESD-51-7 (4-layer PCB).Note 2: Contact factory for specific location and type of pin 1 identification.

Table 9-1: Package Dimensions

Description Symbol mm inchmin typ max min typ max

Package height A 0.80 0.90 1.00 0.031 0.035 0.039Stand off A1 0.00 0.02 0.05 0.000 0.00079 0.002Thickness of terminal leads, including lead finish

A3 -- 0.20 REF -- -- 0.0079 REF --

Width of terminal leads b 0.18 0.25 0.30 0.0071 0.0098 0.012Package length / width D / E -- 4.00 BSC -- -- 0.157 BSC --Length /width of exposed pad D2 / E2 2.50 2.65 2.80 0.098 0.104 0.110Lead pitch e -- 0.5 BSC -- -- 0.020 BSC --Length of terminal for soldering to sub-strate

L 0.35 0.40 0.45 0.013 0.016 0.018

Number of terminal positions N 20 20Note: The mm values are valid, the inch values contain rounding errors.

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10 Marking

10.1 Top Side

Table 10.1-1: Top Side

Elmos (optional)52407AXXXXUYWW*#

Table 10.1-2: Marking of the Devices

Signature Explanation52407 Elmos project numberA Elmos project revision numberXXXX Production lot numberU Assembler CodeYWW Year and week of assembly* Mask revision code# Elmos internal code

10.2 Bottom SideNo marking

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11 Reliability

11.1 Eeprom Data RetentionThe data retention for the Eeprom within the given profile shown in Table 11.1-1 is statistically ensured according to AEC Q-100.

Table 11.1-1: Eeprom mission profile

Junction Temperature in [°C] Operation Life Time in [h] Storage Time in [a] Comment-40 480 Operation mission profile23 160040 520080 64095 80

105 50

23 10 In production standby85 5

23 10 After market storage95 5

8000 30 Sum

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12 Storage, Handling, Packing and Shipping

12.1 StorageStorage conditions should not exceed those given in Chapter 2 Absolute Maximum Ratings.The Moisture Sensitivity Level is specified according to MSL3 (JEDEC J-STD-020X in its valid revision).

12.2 HandlingDevices are sensitive to damage by Electrostatic Discharge (ESD) and should only be handled at an ESD protected worksta-tion.

Handling conditions should not exceed those given in Chapter 2 Absolute Maximum Ratings.

12.3 PackingMaterial shall be packed for shipment as follows:

• Tape-on-Reel• Drybag for MPC samples• Every reel respectively drybag will be packed in a packing carton. Each packing carton will be marked and sealed by using

the standard label for packings.

12.4 ShippingEach delivery shall be accompanied by the following:

• Certificate of conformance to the specification• Delivery note

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13 ContentsTable of ContentFeatures...........................................................................................................................................................................................1Applications......................................................................................................................................................................................1Ordering Information.......................................................................................................................................................................1General Description.........................................................................................................................................................................1Typical Application Circuit................................................................................................................................................................1Pin Configuration.............................................................................................................................................................................2Pin Description.................................................................................................................................................................................21 Block Diagram...............................................................................................................................................................................32 Absolute Maximum Ratings..........................................................................................................................................................43 ESD and Latchup............................................................................................................................................................................5

3.1 ESD Protection......................................................................................................................................................................53.2 Latch-up................................................................................................................................................................................5

4 Recommended Operating Conditions...........................................................................................................................................65 Electrical Characteristics...............................................................................................................................................................7

5.1 Supply and Power-On-Reset.................................................................................................................................................75.1.1 Transducer driver output voltage................................................................................................................................7

5.2 Transducer Driver.................................................................................................................................................................85.3 Receiving path......................................................................................................................................................................8

5.3.1 Analog Amplifier..........................................................................................................................................................85.3.2 Digital Filter..................................................................................................................................................................95.3.3 Sensitivity Time Control (STC)......................................................................................................................................9

5.4 2-pin synchronous serial digital interface............................................................................................................................95.4.1 EEPROM commands..................................................................................................................................................10

5.4.1.1 EEPROM configuration......................................................................................................................................106 Typical Operating Characteristics...............................................................................................................................................117 Functional Description ...............................................................................................................................................................12

7.1 Overview.............................................................................................................................................................................127.2 Supply and Power-On-Reset..............................................................................................................................................12

7.2.1 Analog supply............................................................................................................................................................137.2.2 Digital supply.............................................................................................................................................................137.2.3 Driver supply..............................................................................................................................................................137.2.4 Power up sequence...................................................................................................................................................147.2.5 Limited performance between VSUPmin and VSUPPOR..........................................................................................15

7.3 Transducer Driver...............................................................................................................................................................167.3.1 Transducer driver frequency.....................................................................................................................................177.3.2 Number of burst pulses.............................................................................................................................................187.3.3 Transducer voltage....................................................................................................................................................197.3.4 Electronic damping....................................................................................................................................................20

7.4 Receiving path....................................................................................................................................................................217.4.1 Analog Amplifier........................................................................................................................................................217.4.2 Analog to Digital Conversion (ADC)...........................................................................................................................217.4.3 Digital Filter................................................................................................................................................................22

7.4.3.1 Filter characteristics..........................................................................................................................................227.4.4 Sensitivity Time Control (STC)...................................................................................................................................22

7.5 2-pin synchronous serial digital interface..........................................................................................................................247.5.1 Command Overview..................................................................................................................................................247.5.2 'SEND' Command.......................................................................................................................................................257.5.3 'SEND_WO_DAMP' Command...................................................................................................................................25

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7.5.4 'RECEIVE' Command..................................................................................................................................................257.5.5 'READ_FILTER' Command..........................................................................................................................................257.5.6 'READ_STATUS' Command........................................................................................................................................257.5.7 'READ_ID' Command.................................................................................................................................................267.5.8 'CAL_PULSES' Command............................................................................................................................................267.5.9 EEPROM organisation................................................................................................................................................277.5.10 EEPROM commands................................................................................................................................................28

7.5.10.1 'EE_READ' Command......................................................................................................................................287.5.10.2 'SET_EE_VOL' Command.................................................................................................................................287.5.10.3 'EE_READ_SHADOW' Command.....................................................................................................................287.5.10.4 'EE_WRITE' Command.....................................................................................................................................287.5.10.5 'EE_PROGRAM' Command..............................................................................................................................28

8 Typical Applications....................................................................................................................................................................298.1 Typical Application Circuit E524.07....................................................................................................................................298.2 External Components E524.07...........................................................................................................................................30

9 Package Reference......................................................................................................................................................................3110 Marking.....................................................................................................................................................................................32

10.1 Top Side............................................................................................................................................................................3210.2 Bottom Side......................................................................................................................................................................32

11 Reliability...................................................................................................................................................................................3311.1 Eeprom Data Retention....................................................................................................................................................33

12 Storage, Handling, Packing and Shipping..................................................................................................................................3412.1 Storage.............................................................................................................................................................................3412.2 Handling...........................................................................................................................................................................3412.3 Packing..............................................................................................................................................................................3412.4 Shipping............................................................................................................................................................................34

13 Contents....................................................................................................................................................................................3514 General......................................................................................................................................................................................38

14.1 WARNING - Life Support Applications Policy...................................................................................................................3814.2 General Disclaimer...........................................................................................................................................................3814.3 Application Disclaimer......................................................................................................................................................3814.4 Contact Info......................................................................................................................................................................39

ELMOS Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.

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Illustration IndexFigure 7.1-1: Ultrasonic distance measuring.................................................................................................................................12Figure 7.2-1: Supply block..............................................................................................................................................................13Figure 7.2.4-1: Power up sequence...............................................................................................................................................14Figure 7.2.4-2: Typical start-up time over VRDV...........................................................................................................................14Figure 7.2.5-1: Power-on-reset functionality................................................................................................................................15Figure 7.3-1: Simplified transducer excitation...............................................................................................................................16Figure 7.3-2: Transducer full bridge...............................................................................................................................................16Figure 7.3.1-1: Flow chart of frequency adjustment [524.07].......................................................................................................18Figure 7.3.3-1: Example of charging CDRV=2.2μF and discharging with 16 pulses @ VSUP=12V................................................19Figure 7.4-1: Block diagram of receiving path [524.07].................................................................................................................21Figure 7.4.3.1-1: Filter frequency response at 48kHz....................................................................................................................22Figure 7.4.3.1-2: Filter frequency response at 58kHz....................................................................................................................22Figure 7.4.4-1: Sensitivity time control..........................................................................................................................................23Figure 7.5-1: 2-pin serial timing diagram.......................................................................................................................................24Figure 7.5.8-1: CAL_PULSES...........................................................................................................................................................26Figure 7.5.9-1: EEPROM configuration..........................................................................................................................................27Figure 8.1-1: Application Circuit E524.07......................................................................................................................................29Figure 9-1: Package Outline...........................................................................................................................................................31

ELMOS Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.

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14 General

14.1 WARNING - Life Support Applications PolicyElmos Semiconductor AG is continually working to improve the quality and reliability of its products. Nevertheless, semicon-ductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.It is the responsibility of the buyer, when utilizing Elmos Semiconductor AG products, to observe standards of safety, and to avoid situations in which malfunction or failure of an Elmos Semiconductor AG Product could cause loss of human life, body injury or damage to property. In development your designs, please ensure that Elmos Semiconductor AG products are used within specified operating ranges as set forth in the most recent product specifications.

14.2 General DisclaimerInformation furnished by Elmos Semiconductor AG is believed to be accurate and reliable. However, no responsibility is assumed by Elmos Semiconductor AG for its use, nor for any infringements of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Elmos Semi-conductor AG. Elmos Semiconductor AG reserves the right to make changes to this document or the products contained therein without prior notice, to improve performance, reliability, or manufacturability .

14.3 Application DisclaimerCircuit diagrams may contain components not manufactured by Elmos Semiconductor AG, which are included as means of illustrating typical applications. Consequently, complete information sufficient for construction purposes is not necessarily given. The information in the application examples has been carefully checked and is believed to be entirely reliable. How-ever, no responsibility is assumed for inaccuracies. Furthermore, such information does not convey to the purchaser of the semiconductor devices described any license under the patent rights of Elmos Semiconductor AG or others.

ELMOS Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.

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14.4 Contact Info

Table 14.4-1: Contact Information

HeadquartersElmos Semiconductor AGHeinrich-Hertz-Str. 1,D-44227 Dortmund (Germany)www.elmos.com

Phone: +49 (0) 231 / 75 49-100Fax: +49 (0) 231 / 75 [email protected]

Sales and Application Support Office North AmericaElmos NA. Inc.32255 Northwestern Highway, Suite 220Farmington Hills, MI 48334 (USA)

Phone: +1 (0) 248 / 8 65 32 00Fax: +1 (0) 248 / 8 65 32 [email protected]

Sales and Application Support Office Korea Elmos KoreaB-1007, U-Space 2, #670 Daewangpangyo-ro,Sampyoung-dong, Bunddang-gu, Sungnam-siKyounggi-do 463-400 Korea

Phone: +82 (0) 31 / 7 14 11 [email protected]

Sales and Application Support Office JapanElmos Japan K.K.BR Shibaura N Bldg. 7F3-20-9 Shibaura, Minato-ku, Tokyo 108-0023 Japan

Phone: +81 3 / 3451-7101Fax: +81 3 / [email protected]

Sales and Application Support Office ChinaElmos Semiconductor Technology (Shanghai) Co., Ltd.Unit 16B, 16F Zhao Feng World Trade Building,No. 369 Jiang Su Road,Chang Ning District, Shanghai, PR China, 200050

Phone: +86 (0) 21 / 6210 0908Fax: +86 (0) 21 / 6219 [email protected]

Sales and Application Support Office SingaporeElmos Semiconductor Singapore Pte Ltd.3A International Business Park,#09-13 ICON@IBP, Singapore 609935

Phone: +65 (0) 690 / 8 12 61Fax: +65 (0) 6570 / [email protected]

© Elmos Semiconductor AG, 2015.Reproduction, in part or whole, without the prior written consent of Elmos Semiconductor AG, is prohibited.

ELMOS Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.

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