If you can't read please download the document
Upload
hoanganh
View
235
Download
4
Embed Size (px)
Citation preview
Materials Science
Volume 6, Number 1
TM
Patterning Tomorrows Electronics
/
Methods for Nanopatterning and Lithography
SIGMA_MM6-1_JP_110525.indd a2 11.5.26 4:10:12 PM
Volume 6, Number 1
TM
2011Material Matters
IBM Almaden Research Center193 nmFraunhofer InstituteChemnitz University of TechnologyGlasgowFaiz RahmanSheffieldGraham LeggettUVUV10 nm
45 nm10 nmUV
20116Websigma-aldrich.com/japan
sigma-aldrich.com/japan
Kaushik Patel, Ph.D.Materials ScienceSigma-Aldrich Corporation
Your Materials Matter.
/
________________________ 2
____________________ 2
___________ 3
________________________ 4
_______ 14
_______ 20
___________________ 24
si
gm
a-
al
dr
ic
h.
co
m/
ja
pa
n
2
Ma
teri
als
Sci
en
ce
SIGMA_MM6-1_JP_110525.indd 2 11.5.26 4:10:14 PM
Wisconsin-MadisonPaul Nealey4-vinylbenzocyclobuteneVBCBAldrich733377 1250VBCBTg 2
Your Material Matters
Jeff Thurston, PresidentAldrich Chemical Co., Inc.
HFA-MA
193 nm 8
UV UV 8
PAG 11
12
18
ITOFTO 19
PEDOT
22
27
PMMAPDMS 29
References(1) Ryu, D. Y.; Shin, K.; Drockenmuller, E.; Hawker, C. J.; Russell, T. P. Science 2005,
308, 236-239.(2) So, Y.-H.; Hahn, S. F.; Li, Y.; Reinhard, M. T. J. Polym. Sci., Part A: Polym. Chem. 2008, 46,
2799-2806
enetub olcyc ozneb lyniV-4VBCB[99717-87-0] C10H10 FW 130.19
H2C
733377-1G 1g
Tel:03-5796-7340Fax:03-5796-7345 E-mail : [email protected]
3
Ma
teria
ls Scien
ce
SIGMA_MM6-1_JP_110525.indd 3 11.5.26 4:10:15 PM
/
Moore's Law1 1,2
solubility switch 3-5PAGphotoacid generator 3-5
1
RNAk10.50.25 1,2 1-54-PHSpolyhydroxystyrene248 nm193 nm193 nm 3-51248 nm0.26NTMAH193 nm
Daniel P. Sanders, Ratnam Sooriyakumaran, Richard A. DiPietro*
IBM Almaden Research Center, San Jose, CA
*Email: [email protected]
1 1
Positive tone
Negative tone
DevelopRelief Image
TransferPattern
StripResist Film
ExposePattern
ApplyResist Film
substrate resist
mask
R = k1NA
Tel:03-5796-7330Fax:03-5796-7335 E-mail : [email protected]
gm
a-
al
dr
ic
h.
co
m/
ja
pa
n
4
Ma
teri
als
Sci
en
ce
SIGMA_MM6-1_JP_110525.indd 4 11.5.26 4:10:16 PM
HFA 3,6HFA1,1,1,3,3,3-hexafluoro-2-propanolAldrich325244pKa11 7
HFA248 nm193 nm157 nmHFA2193 nm 3,6,8-10
3QCMquartz crystal microbalanceHFAPoly1
HFA2HFAAIBN110 kDaCTAchain transfer agent1-dodecanethiolAldrich471364CTAHFA 11,1245HFA 6,8-10 1TMAH 12-14
2 193 nmHFA
OO
F3 C CF3OH
OO
CF3
CF3OH
OO
CF3
CF3OH
OO
F3 CCF3HO
OO
CF3
CF3OH
1 2 3
4
5
R 1
OOR2
CF 3F3 C OH
Polymerizable group
Linking group
Hydrophobic, alkali soluble group
400
350
300
250
200
150
100
50
0
1000
800
600
400
200
0
Time in 0.26 N TMAH (seconds)
Calc
ulat
ed T
hick
ness
(nm
)
) (
tfihS
ecn
atsi
seR
Thickness Resistance Shift
130 nm/s
0 2 4 6 8 10
175
150
125
100
75
50
25
0
1000
800
600
400
200
0
Time in 0.26 N TMAH (seconds)
Calc
ulat
ed T
hick
ness
(nm
)
) (
tfi
hS e
cnat
sise
R
Thickness Resistance Shift
140 nm/s
0 2 4 6 8 10
3 QCMpolymethyl methacrylate-co-methacrylic acid 41Aldrich37691421HFA
PolymeraMn
[g/mol] PDI T
Dissolution Rate in TMAH Static water contact angle
Static, advancing contact angleb
Static, receding contact angleb0.26N 0.52N
Poly(1) 4220 1.56 89 C 125 nm/s 1010 nm/s 83 87 66
Poly(2) 6130 1.14 66 C 990 nm/s - 71 77 50
Poly(3) 5920 1.56 55 C 245 nm/s - 75 83 58
Poly(4) 9290 1.32 159 C ~0 nm/s 3.2 nm/s 77 81 65
Poly(5) 11000 1.26 148 C ~0 nm/s ~0 nm/s 86 86 74
aPrepared from Monomers 1-5 in Figure 2, respectively, using AIBN-initiated free radical polymerization. bMeasured using a tilting table contact angle goniometer.
1 HFAUV
Tel:03-5796-7340Fax:03-5796-7345 E-mail : [email protected]
5
Ma
teria
ls Scien
ce
SIGMA_MM6-1_JP_110525.indd 5 11.5.26 4:10:17 PM
/HFA193 nm
4248 nm193 nm254 nm Hg/Xe248 nm193 nmTMAHLERline edge roughnessLWRline width roughness 44HFA248 nm 8,9
193 nm
157 nm193 nm 151hyper-NA 15193 nm o/n o193 nm
16,175 16-18 16film pulling 19 16-17,19
HFATMAH 12-14,16,20HFA
4 248 nm193 nmpolyt-butyl methacrylate-co-4HFA193 nm
@254 nm exposure: 0 mJ/cm2
1.5 mJ/cm2
2 mJ/cm2
5 mJ/cm2
5 mJ/cm2
7 mJ/cm2
8 mJ/cm2
10 mJ/cm2
20 mJ/cm2
Time in 0.26N TMAH (seconds)
Time in 0.26N TMAH (seconds)
Time in Developer (seconds)
@254 nm exposure: 3 mJ/cm2
4 mJ/cm2
5 mJ/cm2
6 mJ/cm2
Thic
knes
s (n
m)
Thic
knes
s (n
m)
Thic
knes
s (n
m)
0 10 20 30 40 50 60 70 80 90
0 10 20 30 40 50 60 70 80 90
0 10 20 30 40 50 60 70 80 90
500
400
300
200
100
0
500
400
300
200
100
0
500
400
300
200
100
0
5
bottom element
Water
permeation
resist componentextraction
particlesbubbles
Evaporationtemp, precip
air
surface energy
amine contamination
intermixing
substrate
BARC
resist
topcoat
Tel:03-5796-7330Fax:03-5796-7335 E-mail : [email protected]
gm
a-
al
dr
ic
h.
co
m/
ja
pa
n
6
Ma
teri
als
Sci
en
ce
SIGMA_MM6-1_JP_110525.indd 6 11.5.26 4:10:18 PM
66 12,161,1,1,3,3,3-hexafluoroprop-2-yl methacrylate6 7 -6 82-acrylamido-2-methyl-1-propanesulfonic acidT-top 14
193 nm
- 16
16HFAHFApH 12,169TMAHHFA 10MAH7
HFAIBM193 nmHFA-MA
6 193 nm
OO
F3 C CF3OH
xO
O
F3 C CF3OH
xO
O
F3 C CF3
yO
O
F3 C CF3OH
xO
HN
y
SO 3H
6 7 8
7 910TMAH
0
10
20
30
40
50
60
70
80
Polymer10
Stat
ic, r
eced
ing
cont
act a
ngle Water
0.26N TMAH
Polymer9
References(1) Wallraff , G. M.; Hinsberg, W. D. Chem. Rev. 1999, 99, 1801.(2) Mack, C. Fundamental Principles of Optical Lithography: The Science of Microfabrication.
Wiley: West Sussex, England, 2008.(3) Ito, H. Adv. Polym. Sci. 2005, 172, 37.(4) MacDonald, S. A.; Willson, C. G.; Frchet, J. M. J. Acc. Chem. Res. 1994, 27, 153.(5) Reichmanis, E.; Houlihan, F. M.; Nalamasu, O.; Neenan, T. X. Chem. Mater. 1991, 3, 394.(6) Ito, H.; Truong, H. D.; Allen, R. D.; Li, W.; Varanasi, P. R.; Chen, K.-J.; Khojasteh, M.;
Huang, W.-S.; Burns, S. D.; Pfeiff er, D. Polym. Adv. Technol. 2006, 17, 104.(7) Gandler, J. R.; Jencks, W. P. J. Am. Chem. Soc. 1982, 104, 1937.(8) Varanasi, P. R.; Kwong, R. W.; Khojastech, M.; Patel, K.; Chen, K-J.; Li, W.; Lawson, M. C.;
Allen, R. D.; Sooriyakumaran, R.; Brock, P.; Sundberg, L. K.; Slezak, M.; Dabbagh, G.;Liu, Z.; Nishimura, Y.; Chiba, T.; Shimokawa, T. J. Photopolym. Sci. Technol.2005, 18, 381.
(9) Varanasi, P. R.; Kwong, R. W.; Khojastech, M.; Patel, K.; Chen, K-J.; Li, W.; Lawson, M. C.;Allen, R. D.; Sooriyakumaran, R.; Brock, P.; Sundberg, L. K.; Slezak, M.; Dabbagh, G.;Liu, Z.; Nishimura, Y.; Chiba, T.; Shimokawa, T. Proc. SPIE 2005, 5753, 131.
(10) Patel, K.; Lawson, M.; Varanasi, P.; Medeiros, D.; Wallraff , G.; Brock, P.; DiPietro, R.;Nishimura, Y.; Chiba, T.; Slezak, M. Proc. SPIE 2004, 5376, 94.
(11) Allen, R. D.; Breyta, G.; Brock, P.; DiPietro, R.; Sanders, D.; Sooriyakumaran, R.;Sundberg, L. K. J. Photopolym. Sci. Technol. 2006, 19, 569.
(12) Sanders, D. P.; Sundberg, L. K.; Sooriyakumaran, R.; Brock, P. J.; DiPietro, R. A.;Truong, H. D.; Miller, D. C.; Lawson, M. C.; Allen, R. D. Proc. SPIE 2007, 6519, 651904.
(13) Allen, R. D.; Brock, P. J.; Sundberg, L.; Larson, C. E.; Wallraff , G. M.; Hinsberg, W. D.;Meute, J.; Shimokawa, T.; Chiba, T.; Slezak, M. J. Photopolym. Sci. Technol.2005, 18, 615.
(14) Khojasteh, M.; Popova, I.; Varanasi, P. R.; Sundberg, L.; Robinson, C.; Corliss, D.;Lawson, M.; Dabbagh, G.; Slezak, M.; Colburn, M.; Petrillo, K. Proc. SPIE2007, 6519, 651907.
(15) Lin, B. J. J. Microlith., Microfab., Microsyst. 2004, 3, 377.(16) Sanders, D. P. Chem. Rev. 2010, 110, 321.(17) Wei, Y.; Brainard, R. L. Advanced Processes for 193-nm Immersion Lithography SPIE
Press, Bellingham, WA, 2009.(18) Wallraff , G. M.; Lars