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Performance Status of EUV Resist;24nm HP CNT at MET, and 27nm HP PWA at ADT1

Chawon Koh*, Jacque Georger, Liping Ren, Frank Goodwin, Stefan Wurm, Dominic Ashworth, and Warren Montgomery (SEMATECH)Joo-on Park (Samsung Electronics),Bill Pierson (ASML), Patrick Naulleau (LBNL)

17 October 2009 2EUVL Symposium 2009

Outline

• Strategic Approach for EUV resist readiness

• Progress and current status of EUV resists

• Key technical gasps for 22nm HP patterning

• Sub 30nm HP contact hole results at MET

• Process window at 27nm HP patterning at ADT1

• LWR Improvement with underlayer and rinse material

• Summary

• Acknowledgement

17 October 2009 3EUVL Symposium 2009

Strategic Approach for EUV Resist Readiness

• Black : Moderate performanceRequired timing for EUV resist readiness in case of pilot line and HVM.

• Green : Good performance

*R L S

R L S

R L S

Resist at PPT for M1/CNT, etc

Resist at PPT for Active, etc27nm HP, 15mJ/cm2, LWR 4nm

27nm HP, 7.5mJ/cm2, LWR 5.5nm for M1, etc27nm HP, 15mJ/cm2 for contact hole

2009 2010 2011 2012 2013

Resist for HVM 22nm HP, 10.0mJ/cm2, LWR 1.4nm

• We need a strategic approach to meet resist requirements for pilot linewhen considering RLS trade-off: Develop two kinds of resists.

• LWR Improvement by rinse material, and pattern transfer

17 October 2009 4EUVL Symposium 2009

Sub 30nm Patterning Fidelity of EUV Resists22nm HP 24nm HP 26nm HP 20nm HP28nm HP

• Berkeley MET, R.Dipole• Albany MET, Quadrupole

A

B

G

E

C

D

F

17 October 2009 5EUVL Symposium 2009

Progress of Polymer bound PAG resist

30

Resolution DoseLWR

28 28 28 28 28 2826

24 2426

14 15

9.4 10.2

78.8

10.9 10.9

5.4 7.85.1

7.3 6.27.5 6.7 7.8

4.94.94 4.982.41 3.1 2.25 1.86 2.17

0.871.79

A B C D E F G H I

25

20

15

Nano Z-factor32nm HP DRAM

10

5

0

* nZ32-factor(Nano Z-factor) : Todd Younkin, et al., EUV Symposium (2008)Material Z-factor

nZ32 = 32nm HP Target Z-factor

17 October 2009 6EUVL Symposium 2009

Performance Status of EUV Resists

ITRS HVM Specs

1Resolution

[nm] HP

Image Capability

[nm]

LER / 2LWR[nm]

3Dose[mJ/cm2]

Resist Collapse [nm] (4A/R)

32nm HP 32 NA NA / 2.0 (2.56)* 10.0 2.5

22nm HP 22 NA NA / 1.4 (1.76)* 10.0 2.5

G 28 26 7.9 / 10.3 6.3 32 (1.56) 8.63E-08

Z-Factor

A 22 20 3.8 / 5.6 14.5 26 (1.92) 2.21E-08

B 24 22 3.2 / 4.6 12.0 28 (1.78) 1.70E-08

C

D 26 24 4.0 / 6.0 22.7 30 (1.67) 8.49E-08

E 28 26 4.3/ 6.6 8.9 30 (1.67) 3.61E-08

F 28 26 5.3 / 8.2 6.2 30 (1.67) 3.85E-08

1) LBNL MET, 0.3 NA, Rotated dipole, 2) Average of 1:1 30 nm, 32 nm, 34 nm, and 36 nm HP features3) LBNL / 2.0, 4) 50 nm resist thickness, A/R without resist collapse*) The number in brackets gives LWR for DRAM hp with 8% spec.

EU

V R

esis

ts

(Resolution ; nm)3 * (LER; nm)2 * (Sensitivity; mJ/cm2) ~ Constant [ Z-factor (mJ*nm3) ]* Z-factor : Thomas Wallow, et al, SPIE 69211F (2008)

24 22 3.1 / 4.5 10.9 26 (1.92) 1.45E-08

17 October 2009 7EUVL Symposium 2009

Key Technical Gaps for 22nm HP Patterning

0

5

10

15

20

25

30

Res. Sensitivity LWR A/R (Collapse)

A

B

C

D

E

F

G

22nm HP 10mJ/cm2 1.4nm 2.5

22nm HVM Spec.

Goal

0

0.5

1.0

1.5

2.0

2.5

3.0

34%

75%

30%

• LBNL MET, Rot. Dipole• 50nm Resist THK

1. Resist Collapse (30%)

5. Defect (Bridge/ Scum)

4. Pattern transfer with thin resist(35nm remained resist pattern height with 50nm coating resist thickness)

• Key Gaps for 22nm HP Patterning

2. Resolution (10%) 3. LWR (75%)

6. Sensitivity

A/R 2.27 2.27 1.95

SMT2SMT1 SMT3

50nm Tpr 50nm Tpr 40nm Tpr

Resist height ~35nm

17 October 2009 8EUVL Symposium 2009

24nm HP Contact Hole Results at MET

• SMT2 Resist, 40nm THK, Annular illumination

32nm HP 30nm HP 28nm HP 26nm HP 24nm HP

Best Focus

-50nm

-100nm

+50nm

• 24nm 1:1 dense contact hole was demonstrated at Berkeley MET.• Contact hole uniformity need to be improved for sub 30nm HP patterning.

17 October 2009 9EUVL Symposium 2009

Patterning Fidelity of 27nm HP at ADT1

30nm HP L/S Resist Esize(mJ/cm2) % EL DOF (nm)

Min. Resolution

(HP)

SMT3 25.2 5.2 13% 160 26

SMT6 14 4.8 14% 160 27

SMT7 20 4.4 12% 200 26

LWR(nm)

LWR 4.8nm LWR 5.5nm

LWR 6.4nm LWR 6.1nmLWR 6.6nm

Best Focus BF -40nmBF -80nm BF +40nm BF +80nm

SMT7

23.2mJ/cm2

18.0mJ/cm2

SMT3

27nm

HP

Patte

rnin

g

• SMT7 resist showed sensitivity improvement of 22%, and LWR improvement of 25%compared to SMT3 resist for 27nm HP patterning.

17 October 2009 10EUVL Symposium 2009

Resist Performance of SMT7 Resist at ADT1

30nm HP 29nm HP 28nm HP 27nm HP 26nm HP 25nm HP

LWR 3.9nm LWR 4.6nm LWR 4.8nm LWR 4.8nm

LWR 3.7nm LWR 4.0nm LWR 4.6nm

LWR 3.4nm LWR 4.3nm LWR 4.0nm LWR 5.5nm

• Dose ; 18.0mJ/cm2

• SMT7 60nm on SMTUL-1 underlayer

BF +120nm

BF +40nm

Best Focus

BF -40nm

BF -80nm

• SMT7 is a champion resist exposed at ADT1 in terms of Z-factor analysis. • Resist collapse need to be improved for 27nm HP patterning.

17 October 2009 11EUVL Symposium 2009

27nm HP Process Window of SMT3 Resist at ADT1

21.6mJ 22.4mJ 23.2mJ 24.0mJ 24.8mJ

•DOF : ~60nm @ Best Dose•EL : 6.8% @ Best Focus

LWR 5.9nm

LWR 7.5nm

LWR 5.9nm LWR 6.6nm

LWR 6.4nm

LWR 6.1nm

LWR 6.1nm

LWR 7.5nm

• SMT3 60nm on SMTUL-1 underlayer-80nm

27nm CD

0.02000.02200.02400.02600.02800.03000.03200.0340

-0.12 -0.08 -0.04 0 0.04 0.08 0.12

Focus(um)

Mea

sure

men

t

20 mJ

20.8 mJ

21.6 mJ

22.4 mJ

23.2 mJ

24 mJ

24.8 mJ

27nm LWR

0.00000.00200.00400.00600.00800.01000.01200.0140

-0.12 -0.08 -0.04 0 0.04 0.08 0.12Focus(um)

Mea

sure

men

t

20 mJ20.8 mJ

21.6 mJ

22.4 mJ

23.2 mJ24 mJ

24.8 mJ

-40nm

BF

+40nm

+80nm

• Resist collapse need to be improved for 27nm HP patterning.

17 October 2009 12EUVL Symposium 2009

27nm HP Process Window of SMT7 Resist at ADT1

17.4mJ 18.2mJ 19.0mJ 19.8mJ 20.6mJ

LWR 5.3nm

LWR 5.9nm

LWR 5.2nm

LWR 5.4nm LWR 5.1nm

LWR 5.8nm LWR 6.4nm LWR 5.2nm

LWR 5.4nm

+120nm •DOF : ~70nm @ Best Dose•EL : 8% @ Best Focus

• SMT7 40nm on SMTUL-1 underlayer

27nm CD

0.02000.02200.02400.02600.02800.03000.03200.0340

-0.8 µm -0.4 µm 0 µm 0.4 µm 0.8 µm 1.2 µmFocus(um)

Mea

sure

men

t 15.8 mJ16.6 mJ17.4 mJ18.2 mJ19 mJ19.8 mJ20.6 mJ

27nm LWR

0.0000

0.0020

0.0040

0.0060

0.0080

0.0100

-0.8µm

-0.4µm

0 µm 0.4 µm 0.8 µm 1.2 µm

Focus(um)M

easu

rem

ent 15.8 mJ

16.6 mJ17.4 mJ18.2 mJ19 mJ19.8 mJ20.6 mJ

-40nm

0nm

+40nm

+80nm

• Resist collapse need to be improved for 27nm HP patterning.

17 October 2009 13EUVL Symposium 2009

LWR Improvement with Rinse Material

• Albany MET, Quadrupole, 45nm Resist thickness

HMDS SMTUL1 Underlayer

SMTUL1 and SMTRinse1

LWR(nm) 8.4 6.2 5.5

LWR improvement(2.9nm, 34%) - 2.2nm(27%) 0.7nm(11%)

30nm HP

• 2.9nm LWR (34%) improvement was demonstrated with using a spin-on underlayer and rinse material.

17 October 2009 14EUVL Symposium 2009

Summary

• Resist suppliers focus on resist development for pilot line usage requiring high sensitivity, and optimization of resist performance at fullfield ADT1. - No improvement in champion resolution at MET - Little improvement in LWR - Good progress in sensitivity

• Resolution of 24nm 1:1 dense contact hole were demonstrated with PHS based CAR. Contact CD non-uniformity need to be improved for sub 30nm HP

• Resist collapse, LWR, defect, and pattern transfer with sub 40nm resist pattern height need to be improved for 22nm HP patterning.

• Demonstrated measurable process window at 27nm HP patterning. (DOF; ~70nm @ Best Dose, EL; 8% @ Best Focus)

• 2.9nm(34%) LWR Improvement was achieved using a spin-on undrlayer and rinse material.

17 October 2009 15EUVL Symposium 2009

Acknowledgement

• Dongjin ; Jung-Youl Lee, Jaehyun Kim • Dow ; Su Jin Kang, James W Thackeray• Fujifilm ; Katsuhiro Yamashita, Shinji Tarutani• JSR ; Yoshi Hishiro, Shalini Sharma• Shinetsu ; Jun Hatakeyama, Yoshio Kawai• Sumitomo ; Nobuo Ando, Yuko Yamashita• TOK ; Rick Uchida, Taku Hirayama

• AMD ; Tom Wallow, Bruno La Fontaine• ASML ; Kevin Cummings• CNSE ; Corbet Johnson, Brian N Martinick, Martin Rodgers• IBM ; Karen Petrillo• Intel ; Ernisse Steve Putna• Lawrence Berkeley National Laboratory ; Gideon Jones,

Brian Hoef, Paul Denham, Jerrin Chiu • Samsung Electronics ; Subramanya Mayya• SEMATECH ; Cecilia Montgomery, Dave Amedure, Khurshid Anwar