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Z i a i eB i o m e d i c a lM i c r o d e v i c e sL a b o r a t o r y
B i r c k N a n o t e c h n o l o g y C e n t e r1 2 0 5 W S t a t e S t
W e s t L a f a y e t t e , I N 4 7 9 0 7h t t p s : / / e n g i n e e r i n g . p u r d u e . e d u / Z B M L /
1
Phase Change Materials for Photonics
ECE 695Chang Keun Yoon
Z i a i eB i o m e d i c a lM i c r o d e v i c e sL a b o r a t o r y
B i r c k N a n o t e c h n o l o g y C e n t e r1 2 0 5 W S t a t e S t
W e s t L a f a y e t t e , I N 4 7 9 0 7h t t p s : / / e n g i n e e r i n g . p u r d u e . e d u / Z B M L /
2
Contents
Z.Yangetal.,Photonicsjournal,2015.
• WorkingprincipleofPCMinphotonics
• TwoPCMsinphotonicsystem
• TemperaturedependentopticalpropertiesinPCM
• OpticalpropertiesofPCMs
• Applications• Writingofreconfigurablephotonic
devicesinaphase-changefilm
• Ultra-thin perfect absorber
• Non-volatilememory
Z i a i eB i o m e d i c a lM i c r o d e v i c e sL a b o r a t o r y
B i r c k N a n o t e c h n o l o g y C e n t e r1 2 0 5 W S t a t e S t
W e s t L a f a y e t t e , I N 4 7 9 0 7h t t p s : / / e n g i n e e r i n g . p u r d u e . e d u / Z B M L /
3
Working principle of PCM in photonics• Atomic arrangement of different states
in PCM introduces large change in optical and electrical properties.
• Solid-state phase change systems– Vanadium dioxide (VO2)Electronic transition and structural transition– Chalcogenide (Ge2Sb2Te5)Amorphous and crystalline state transition
• Change of properties in 2 different states
– Dielectric function, 𝜀– Refractive index, n– Carrier density and electrical conductivity
CD-RW technologies, technical forum, northallegheny.org
Z. Yang et al., Photonics Journal, 2015.
𝑛 = 𝜀%& + 𝜀%̃&
� + 𝜀%2
�
𝑤ℎ𝑒𝑟𝑒𝜀%: 𝑟𝑒𝑎𝑙𝑎𝑛𝑑𝜀%̃: imaginary
T. Taubner et al., Nature photonics, 2017
rhombohedraloctahedral-like
Z i a i eB i o m e d i c a lM i c r o d e v i c e sL a b o r a t o r y
B i r c k N a n o t e c h n o l o g y C e n t e r1 2 0 5 W S t a t e S t
W e s t L a f a y e t t e , I N 4 7 9 0 7h t t p s : / / e n g i n e e r i n g . p u r d u e . e d u / Z B M L /
4
Two recent advanced PCM in Photonics
• VO2 (an oxide system)– Metal to semiconductor
(Monoclinic to tetragonal) transition, vice versa at 70ºC
– Sharp discontinuity in electrical conductivity
N. Yamada et al., Nature Materials, 2007.
• Ge3Sb2Te6 (Chalcogenide system)– Atomicarrangementinamorphousand
crystallinestates– Somebondsstillremainstrongbonds:local
arrangeofatoms– Formscrystalasbeforetransition
M. Kanehira et al., Scientific reports, 2013.
Z i a i eB i o m e d i c a lM i c r o d e v i c e sL a b o r a t o r y
B i r c k N a n o t e c h n o l o g y C e n t e r1 2 0 5 W S t a t e S t
W e s t L a f a y e t t e , I N 4 7 9 0 7h t t p s : / / e n g i n e e r i n g . p u r d u e . e d u / Z B M L /
5
Temperature dependent optical properties
Parketal.,Thinsolidfilms,2012
• Amorphous (RT) and crystalline (500 ºC) structure grown in different temperatures.
• Crystalline grown Vanadium oxide systems show higher refractive index, n.
• Transmittance in higher temperature show lower transmittance.
• Transmittance of VO2 at 100 ºC (crystalline) is 7.4% less than room temperature (amorphous).
V2O5
VO2
VO2
Amorphous
Crystalline
Crystalline
Z i a i eB i o m e d i c a lM i c r o d e v i c e sL a b o r a t o r y
B i r c k N a n o t e c h n o l o g y C e n t e r1 2 0 5 W S t a t e S t
W e s t L a f a y e t t e , I N 4 7 9 0 7h t t p s : / / e n g i n e e r i n g . p u r d u e . e d u / Z B M L /
6
OpticalpropertiesofPCMs
• Increaseinrefractiveindex(n),extinctioncoefficient(k),andreflectance(R)aftercrystallization.
• Significantchangesinbondingintroducesdifferenceinopticaldielectricconstant.
Crystallization
Amorphous
T.Taubner etal.,Naturephotonics,2017
Z i a i eB i o m e d i c a lM i c r o d e v i c e sL a b o r a t o r y
B i r c k N a n o t e c h n o l o g y C e n t e r1 2 0 5 W S t a t e S t
W e s t L a f a y e t t e , I N 4 7 9 0 7h t t p s : / / e n g i n e e r i n g . p u r d u e . e d u / Z B M L /
7
Writing of reconfigurable photonic devices in a PCM film• Fresnel zone-plates
• Structural phase changed from amorphous (n= 3.9) to crystalline (n=4.3).
• Optical pulses of different duration, typically consisting of a few tens of 85 fs pulses.N.I.Zheludev.,Naturephotonics,2015
Z i a i eB i o m e d i c a lM i c r o d e v i c e sL a b o r a t o r y
B i r c k N a n o t e c h n o l o g y C e n t e r1 2 0 5 W S t a t e S t
W e s t L a f a y e t t e , I N 4 7 9 0 7h t t p s : / / e n g i n e e r i n g . p u r d u e . e d u / Z B M L /
8
Ultra-thin perfect absorber
• Co-existence of phase transition.
• At 343K, the reflectivity drops to ~0.0025 at λ=11.6 µm.
• n >> k, Total reflection is coherence sum of
partial reflection. Phase shift = - 𝜋
• n ~ k,Absorption resonance exists with
thickness of dielectric smaller than λ.F. Capasso et al., Applied physics letter, 2012
Z i a i eB i o m e d i c a lM i c r o d e v i c e sL a b o r a t o r y
B i r c k N a n o t e c h n o l o g y C e n t e r1 2 0 5 W S t a t e S t
W e s t L a f a y e t t e , I N 4 7 9 0 7h t t p s : / / e n g i n e e r i n g . p u r d u e . e d u / Z B M L /
9
Non-volatilememoryapplications• Large refractive index (~ 2)
change.• High-speed phase transition
10 ~ 100 ns.• Long shelf-life (room temp.).• More than 100,000 cycles.
N. Yamada et al., Nature Materials, 2007.