Photo credits and copyright inside back cover€¦ · optic communications. Similarly, the adoption of wireless communications has been driven by compound semiconductors that offer

Photo credits and copyright inside back cover

1 SET 2018 Compound SemiconductorsBirmingham | 27th November 2018

Foreword

Chris MeadowsHead of Open innovation, IQE plc, Cardiff

Despite their significant impact in bringing about major technological advances over the last three decades, compound semiconductors have been the unsung heroes, often considered a niche industry.

Throughout history, the role of material developments has marked key milestones in human evolution, from the Stone Age through to the Iron and Bronze Ages. Perhaps future historians will regard our era as the Silicon Age in recognition of the transformative impact the material has had on our world, ushering in the digital revolution through a focus on continuous miniaturisation bringing about greater functionality.

There is little doubt that, for the last half a century, semiconductor technologies have completely transformed the way we live, work and spend our leisure time and that silicon has been the dominant material system behind the technological revolution. However, rapidly growing demand for enhanced performance coupled with an increasing reliance on photonic and magnetic properties has been met by the advanced properties of compound semiconductors typically based on gallium arsenide (GaAs) and indium phosphide (InP).

Since the 1980s, compound semiconductors have defined the evolution of fiber-optic communications. Similarly, the adoption of wireless communications has been driven by compound semiconductors that offer the performance advantages needed for 3G and 4G handsets and wireless network infrastructure.

Until recently, optical and wireless communications have been the primary

Contents

2SET 2018 Compound Semiconductors Birmingham | 27th November 2018

markets for compound semiconductors, but new and emerging technologies are placing rapidly increasing demands on our industry for optical sensing, power control, millimeter wave and microwave, energy efficiency and a plethora of other advanced capabilities.

The UK’s Industrial Strategy has identified four initial grand challenges: artificial Intelligence and data; ageing society; clean growth; and future of mobility as key global trends on which to focus. Compound semiconductors provide the key enabling capabilities that will support a wide range of technological solutions to address both the current and likely future grand challenges. The UK enjoys a world leading, global position in the development and manufacture of compound semiconductor materials, with significant activities across a number of universities, institutes and businesses. As such, we have a unique opportunity to play a dominant global role not only in our innovative approach to product development but also in following through with world-class, state of the art manufacturing capabilities.

Celebrating its thirtieth anniversary in 2018, IQE was established in Cardiff in 1988 and is now regarded as the global leading producer of compound semiconductor based epitaxial wafers. The history of IQE is synonymous with the adoption of compound semiconductor technologies, initially focusing on lasers and detectors for fibre-optic communications before expanding into the growing RF market for handsets as mobile technologies transformed from basic communications devices to smartphones.

Over the last few years, the adoption of photonic capabilities for communications and sensing driven increased demand for both InP based laser technologies and vertical cavity surface emitting lasers (VCSELs) that are highly complex material structures used in applications as diverse as 3D sensing, data communications, data centres, gesture recognition, health, cosmetics, illumination and heating applications as well as LIDAR for connected, autonomous vehicles.

IQE is the market leader for outsourced VCSEL materials, which has been achieved by virtue of its technology leadership. This includes the demonstration of VCSELs with record speeds, efficiencies and temperature performance. In addition, with its 150mm (6”) wafer capability IQE has been successful at enabling its customers to reduce significantly the unit cost of sensor chips that in turn is helping to accelerating the adoption of this technology.

In addition to IQE there are a number of other anchor businesses that operate in the compound semiconductor space. In 2016, the first wave of science and innovation audits identified more than 600 companies operating within the compound semiconductor supply chains across South West England and South East Wales alone, with further related activities across the UK.

Foreword

3 SET 2018 Compound Semiconductors Birmingham | 27th November 2018

The growing compound semiconductor cluster “CSconnected” which is initially centred around South East Wales, comprises a unique eco-system of organisations that include global businesses such as IQE, Newport Wafer Fab, SPTS and Microsemi. Importantly, those businesses are supported by significant investment in research, development and innovation in the form of bodies that include Cardiff University’s Institute of Compound Semiconductors (ICS), Swansea University’s Centre for Integrative Semiconductor Materials (CISM), EPSRC’s Compound Semiconductor Manufacturing Hub which is a joint activity involving Cardiff, Manchester and Sheffield Universities, the Compound Semiconductor Centre which is a joint venture between IQE plc and Cardiff University, and the Compound Semiconductor Applications Catapult.

The CSconnected cluster is the only concentration of compound semiconductor material expertise and large scale semiconductor wafer scale volume manufacturing globally that has the scale, expertise and the IP to order to deliver a major UK supply chain advantage. In addition alignment of world-class academic research, and core supply elements such as capital equipment and device packaging will accelerate and embed our unique capabilities for enabling emerging technologies.

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Paul HuggettCoordinator of the Compound Semiconductor Special Interest Group, Knowledge Transfer Network

The Compound Semiconductors Special Interest Group

The Knowledge Transfer Network and Innovate UK initiated the Compound Semiconductor Special Interest Group (CoSSIG) to support the newly established Compound Semiconductor Applications Catapult. CoSSIG brings the wide range of actors in the compound semiconductor supply chain together to recognise the opportunities enabled by recent innovation in compound semiconductor technologies and systems. This involves engagement with all parts of the supply chain including, but not limited to, Primes / Tier 1, end user category companies with R&D absorptive capacity in Power Electronics, Photonics, RF & Microwave and Sensors. CoSSIG also provides a community resource for interventions such as Innovate UK competitions such as the Integrated Delivery Programme and the Industrial Strategy Challenge Fund.


Exhibitor Profiles

Microstructural analysis of steel and related materials, and the ability to image magnetic domain walls and grains (domain walls are released from microstructural obstacles such as dislocations, grain boundaries etc.) is of great importance in a range of industries.

Bulk classical detection techniques used for this purpose do not have the resolution (both spatial and magnetic) to extract the wealth of data available, and instead rely on expensive and time consuming and destructive techniques such as Scanning Electron Microscopy (SEM) or Transmission Electron Microscopy (TEM) of sectioned samples.

We address these issues by using advanced Quantum Well Hall Effect (QWHE) sensors as a novel solution to enable a new paradigm in high resolution microstructural analysis of materials on unprocessed samples and without the need for any surface preparation or sectioning.

Microstructural imaging and analysis are critical for the structural health integrity of safety critical metallic structures in a range of industries including aerospace, oil and gas, rail, power generation and pipe manufacturing. Non-destructive microstructural imaging for:

Aerospace •Oil and gas•Industrial•Energy•

Without the need for surface preparation.

Microstructural Analysis of Steel and Related MaterialsAdvanced Hall Sensors Ltd

Potential applications


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ICS is a technological leader in the design, simulation, manufacture and testing of advanced compound semiconductor RF and Optical devices for the 5G wireless, 10G/25G/100G Telecom and Datacom markets. Its device portfolio includes Ground Signal Ground (GSG) and Dual Pad (DP) variants developed on 4” Indium Phosphide (InP) / Gallium Arsenide (GaAs) wafer process platforms in partnership with the Compound Semiconductor Centre (CSC). The optical devices are based on high speed InGaAs-InAlAs PIN & APD detectors, which are designed for top entry illumination and are optimised for single mode communication fibre from 1260 nm to 1620 nm wavelength bands. The key characteristics of these devices include extremely low capacitance, low dark currents and large bandwidth at low reverse bias. The RF devices include Tunnel Diodes, Gunn Diodes and Varactors specifically tailored to industry and customer needs.

Telecom and Datacom•Defence•Medical•Automotive Industries•

Devices for RF and Optical Devices for the 5G Wireless, 10G/25G/100G Telecom and Datacom MarketsIntegrated Compound Semiconductors Ltd



Exhibitor Profiles

Amethyst Research Limited and Lancaster University have developed a novel infrared detector technology, which provides unprecedented high signal-to-noise ratio detection. The III-V compound semiconductor detectors are ideally suited to applications detecting wavelengths in the short-, mid- and long-wave infrared spectral range, from 2 μm to 12 μm.

This technology is reliable, tunable and compact, and can be customised for different applications, including large single element, linear arrays, 2D imaging arrays, and high bandwidth detection. The detectors can be operated uncooled or in Thermo-Electric Cooling (TEC) packages, exhibiting low leakage currents and providing very stable responsivity (signal) and leakage (noise), allowing for nW or pW optical signals to be detected.

With Amethyst Research and Lancaster University’s joint commitment to unlocking the exciting and transformative properties of quantum technologies within the UK industry, the pair have since collaborated on multiple government funded projects including programs aimed at developing Resonant Cavity devices for detecting explosive, chemical and biological hazards, an extended Short-Wave Infrared (e-SWIR) detector and III-V semiconductor Focal Plane Arrays in collaboration with Leonardo. These programs have created opportunities to work with additional industrial partners, including Gas Sensing Solutions Ltd, CST Global Ltd and Microsemi, in preparation for creating a route to market for this technology.

Chemical detection•Defence and security•Recycling•Environmental monitoring•LIDAR•Medical diagnostics•Spectroscopy•Temperature measurement•Thermal efficiency•Infrared imaging•

Novel Infrared DetectorsAmethyst Research Limited and Lancaster University



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The Photonic and Quantum Sciences group at the University of Surrey has over 30 years of experience working on the development of semiconductor-based photonic devices. Building on the pioneering work of Alf Adams, FRS in the 1980’s on the strained layer Quantum Well (QW) laser, the group has expanded to work on a number of new compound semiconductors for applications in photonic devices.

Surrey’s work on the development of new semiconductor materials is based on dilute bismide and dilute nitride alloys (US patent US 10,020,423). These provide a new platform for higher efficiency devices such as semiconductor lasers, photodetectors and solar cells. Thus far, the group has co-developed GaAs-based QW lasers with this material. A particular benefit of this new semiconductor system is to facilitate the production of sensor technologies on conventional GaAs and InP platforms and temperature stable communications lasers. The medium-term aim is to produce GaAs-based Vertical Cavity Surface Emitting Lasers (VCSELs) operating in the mid-infrared. The group is looking for partners to develop prototype materials and devices towards targeted applications.

The group has also worked on the development of optical power delivery systems based around a novel photovoltaic cell / array optimised for operation in the eye-safe region of the infrared spectrum. The system can simultaneously deliver power and data optically, either through free-space or through optical fibres. Applications include remote powering of drones, wireless charging of Electric Vehicles (EVs) and consumer electronics. The technology is at the

A range of sectors can benefit from these technologies:

T• elecoms: cooler-free lasersEnergy: high efficiency single-junction / tandem •

solar cellsManufacturing: safe power delivery in (petro) •

chemical sitesAutomotive: wireless charging of electric vehicles•Aerospace: optical fibre-based aircraft power •

systemsTransport: optical fibre-based trackside power •

systems

Photonic Semiconductor Device Technologies for Energy, Sensing and CommunicationsUniversity of Surrey


demonstrator stage and the group is now looking to develop partnerships and business relationships to focus on key applications.


Exhibitor Profiles

Silicon carbide is a wide bandgap compound semiconductor with a number of advantageous properties such as high thermal conductivity, high electric field breakdown, hardness and resistance to chemicals and radiation. Researchers at the University of Warwick developed technology enabling the epitaxial growth of cubic silicon carbide on standard silicon wafers at low temperature. Traditionally, high temperatures (~1400 °C) are needed to grow high quality silicon carbide on silicon but this leads to high growth costs, more regular maintenance and introduces thermal distortions in the wafers. The new growth technology overcomes these limitations, which have previously held silicon carbide back from high volume commercialisation.

The material grown using this technique was made commercially available through Advanced Epi, a 2-year old spin-out company that is supplying the silicon carbide wafers into various industries across the world. Not only does the technology allow Advanced Epi to supply the material at low cost, but the process can be fully integrated into current silicon production facilities and scaled to high volumes, opening up sub-contract and licencing opportunities.

Advanced Epi and the University of Warwick are also collaborating on research projects to develop the silicon carbide material for sensing applications and are currently prototyping devices which will operate reliably at high temperatures and within harsh environments, ideal for a range of application sectors.

Platforms for the growth of gallium nitride (GaN) for • RF, power and LED applications within the automotive and mobile communication sectors.

Silicon carbide power electronics for high-voltage • applications in transport sectors.

Suspended membranes for use in X-ray transmission • windows and pressure sensors.

Harsh environment sensors including temperature, • pressure, magnetic field, gas flow monitoring in demanding applications.

Biomedical applications.•Battery technology.•Thermal management for existing devices.•

Mass Scale Production of Silicon Carbide Material and SensorsAdvanced Epi Materials and Devices Ltd



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Improved interconnects in power electronics applications, including:

P• ower conditioningEnergy generation and storage•Transportation•


Electrical interconnects are a key component of any electronic device. Conventional interconnects usually consist of aluminium, copper or gold wire bonds but they have several limitations, especially when considering power electronics applications, including; poor reliability under high temperatures, high stray inductance and high thermal resistance. Many of these limitations arise at least in part due to the height of the wire bonds above the plane of the chip, and are now becoming limiting factors in the improvement of many compound semiconductor-based power devices.

Here we present a novel advanced manufacturing technique for the production of interconnects for power electronics applications based on the 3D micro-extrusion of conductive inks. Our proprietary, non-toxic conductive inks have been developed for printed electronics applications but also show excellent performance when used as interconnects.

These interconnects can be made in a flat, sheet-like geometry, eliminating many of the disadvantages associated with conventional wire bonds. This leads to an interconnect with record low inductance, which is highly stable against mechanical shock and thermal cycling, and which is able to play an active part in heat removal from power devices through the integration of a front-sided heat sink.

3D-Printable Electrical Interconnects Micro-extruded silver ink interconnects for power electronics applicationsDZP Technologies Ltd


Exhibitor Profiles

Vertical-Cavity Surface-Emitting Lasers (VCSELs) are small, high-efficiency lasers that are ubiquitous in applications such as datacoms and laser printing. However, the success of low-cost VCSELs, which rely on GaAs-based Distributed Bragg Reflector (DBR) technology, is currently limited to wavelengths in the 800 nm to 1000 nm range; missing the crucial 1265 nm to 1650 nm telecoms band. This is because the accumulated strain in entirely III-As devices (e.g. with InGaAs quantum wells in the active region) excludes telecoms wavelength emission.

Lancaster University, in collaboration with IQE plc and CST Global Ltd (Innovate UK project 103444), is producing and testing demonstrator telecoms wavelength (1300 nm) VCSELs, in which the optically active elements are self-assembled GaSb Quantum Rings (QRs) in GaAs quantum wells [patents: EP3266080 (granted); US15552746; JP2017546230; KR1020177027630]. The use of GaSb QRs readily allows telecoms emission in combination with low-cost, industry-standard GaAs-based Distributed Bragg Reflector (DBR) technology. Furthermore, due to the type-II confinement of the GaSb/GaAs system (electrons and holes are spatially separated), spontaneous emission is supressed promoting population inversion and resulting in ultra-low threshold current densities (~11 Acm-2).

Upstream lasers for Fibre to the Premises (FTTP)•Datacoms•LiDAR•Facial recognition•Optical interconnects•

Telecoms Wavelength VCSEL LasersLancaster University



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Automotive OEMs, Tier 1 and Tier 2 suppliers•Aerospace equipment manufacturers•Server farm manufacturers•Rail traction and auxiliary equipment •

manufacturersSuppliers of renewable energy systems•Suppliers of battery charging interfaces•


The Thinking Pod Innovations Ltd (TTPi) is a SME technology developer, dedicated to transforming electronics for Sustainable Transport and Energy Systems. We focus on cost-effective, highly-efficient, power-dense, lightweight and sustainable power electronic solutions for a broad range of industrial, energy and transport applications. One of our key medium-term targets is the development of scalable, low-cost manufacturing processes for a range of “Converter-in-Package” products, providing an easy-to-use, modular, building block utilising the latest Silicon Carbide and Gallium Nitride compound semiconductor technologies. Currently, this is being supported through the Innovate UK ECOMAP project and we expect to continue development, including the establishment of manufacturing facilities and a route to scale-up by 2023.

The technology targets electrical energy conversion and conditioning via power electronics, for example: DC-DC conversion for battery chargers and management and for power supplies; inverters for renewable energy technology grid interfaces; electric power trains and other traction and motion applications in the transport, energy and industrial sectors.

Three phase converter (shown in image)S• iC and GaN technologiesThree modules•Integrated input and output filters•Sinusoidal output•400 V @ 50 A rms•60 kW / litre•

Power Electronic Converter-in-PackageUniversity of Nottingham and TTPi


Exhibitor Profiles

Optical Telecoms•Industrial•Defence•Healthcare•


CST Global provides both a custom foundry service, and a range of high-volume, standard laser products for the Passive Optical Network (PON). We are an active member in over ten UK and European programmes involving over twenty unique partners. CST Global brings significant expertise in the development of devices, supporting device fabrication and improvement, and brings a wealth of experience on scaling up low Technology Readiness Level III-V technology to commercial requirements and volumes. CST Global aims to support the impact, development and commercialisation of technologies from universities and SMEs, playing a key role in the supply chain for the new devices.

Examples of current collaborative projects include:M• acV (funding: Eurostars): developing miniaturised

atomic clocks using Vertical Cavity Surface Emitting Laser (VCSEL) pump sources. CST design and fabricate the VCSEL lasers in support of the partners.

SUPER8 (funding: Innovate UK): developing •high-speed optical transceiver platforms. CST develop and fabricate high-speed light sources in conjunction with the partners.CoolBlue2 (funding: Innovate UK): aims to •manufacture low cost, short wavelength quantum light sources. CST fabricate the sources for packaging, integration and analysis by collaborators.MIRPHAB (funding: H2020): pilot line for mid-•infrared photonic components, focussing on sensing applications. CST design and fabricate for the consortium.

Custom Foundry Services and Commercialisation of Early Stage Compound Semiconductor TechnologyCST Global Ltd


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Fixed access wireless infrastructure•Small cells and phased arrays capable of beam •

steering (part of 3GPP 5G NR Standards)Autonomous vehicles•Radar for aerospace and defence•


5G is a revolution in communications, targeting an impressive combination of high data rate, reduced latency, energy saving, cost reduction and higher system capacity – all this while supporting massive device connectivity. Yet these significant benefits do not come without significant challenges. This is particularly true when we consider the move to mmWave frequencies, which is fundamental to opening the required bandwidth.

The Compound Semiconductor Applications Catapult provides world-class research facilities with access to independent, trusted expertise in RF and Microwave, Power Electronics and Photonics, with the aim of accelerating the commercialisation of compound semiconductors in key application areas such as the digital economy, healthcare, energy, transport, defence and security, and space. As part of its strategy, it is developing a range of evaluation modules (EVMs) in each technical area to allow UK companies within the supply chain to expediate their prototyping and productization of novel technologies, giving them a competitive edge in a competitive global market. Each EVM program will include a number of dedicated stages with tangible outcomes at each stage.

As part of its first evaluation module program, the Catapult has commissioned a dual channel, 26-28GHz power amplifier covering the pioneer 5G mmWave band for the UK. Each Monolithic Microwave Integrated Circuit (MMIC) has 22dB of gain with output power of 26dBm at 1dB compression. The MMICs have been mounted in a hybrid assembly within a custom laminate QFN package, which houses two GaAs dies. This hybrid

Dual Channel Amplifier for 5GCompound Semiconductor Applications Catapult

assembly approach is seen as key in delivering the high levels of integration required for antenna arrays particularly at mmWave frequencies.


Exhibitor Profiles

Aerospace•Defence•Wireless communications•


Future systems in space, defence and commercial markets will rely heavily on RF beam-steering array systems to provide high performance connectivity. Presently, designers are engaged in developing single-chip solutions for large-scale antenna systems. The optimum technical solution is a single-chip gallium nitride (GaN) front-end driven by either a gallium arsenide or silicon-germanium driver chip. UK defence subcontractors and design teams need sovereign capability as existing GaN foundries are located outside UK, suffering from IP, competition and export issues.

INEX Microtechnology Ltd (INEX) has developed a sovereign GaN technology supply chain and roadmap to mitigate many of the barriers to new markets and ensure secure UK supply. INEX has developed GaN RF power processes to address applications in the range of 2–18 GHz. The processes provide a suite of passive components for a full Monolithic Microwave Integrated Circuit (MMIC) capability including capacitors, inductors, and resistors (three varieties from 5 KΩ to 0.5 Ω). For maximum potential, the process offers low inductance through-substrate-vias and a silicon carbide (SiC) substrate thickness of 100 microns, providing excellent balance between robustness and thermal efficiency. Capacitors have been developed to provide greater than a million hours at 28 V with breakdown-voltages approaching 200 V.

Each process is supported by a Process Design Kit (PDK) that includes: schematic driven layout, design rule checking (DRC), substrate definition and derived layers for time efficient electromagnetic simulation. Each schematic element includes scalable models for RF simulation including small-signal and large-

Gallium Nitride (GaN) MMIC Foundry ProcessINEX Microtechnology Ltd

signal models for transistors. All models have a DRC valid layout. The PDK also includes transmission-line elements with associated layout and electric models.


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Nano-Photonics industry: fabrication of plasmonic • nanostructures on top of rigid and flexible substrates with accuracy and versatility.

Semiconducting industry: stoichiometry control, • defect engineering, crystallinity modification and patterning, as a single-step process, without any thermal damage to underlying materials or the substrate.

Display industry: luminescent thin films annealing, • highly local heating to ultra-high temperatures, ultra-rapid process on heat sensitive substrates, crystallinity modification, dopant activation, materials functionalisation.


Laser Annealing (LA) is based on the delivery of intense and ultra-short light pulses onto thin film materials, with accurate control of energy distribution and layout.

Nottingham Trent University (NTU) has developed a versatile laser processing system with custom built processing stations that allow for full multi-parametric investigations including fluence (mJ/cm2), number of pulses, repetition rate (1-50 Hz), environmental composition (air, Ar, N2, O2, 5% H2 in N2, NH3, Ar:H2S), polarization and wavelength (193 nm – 1064 nm). Our process allows for designing photonic processes with great flexibility and according to very specific needs and requirements. The final design is informed by depth investigation of the heating dynamics during LA, determined by optical and heat transport calculations (within the Finite Difference Time Domain (FDTD) framework).

In contrast to conventional annealing approaches, LA, developed at NTU, allows for ultra-rapid processing times, precise and selective heat generation (highly localised heating), high spatial resolution (patterning), macroscopically cold nature (low thermal budget), as well as compatibility with CMOS technology, roll-to-roll manufacturing and flexible and transparent substrates (heat sensitive).

Laser Annealing of Thin Film SemiconductorsNottingham Trent University


Exhibitor Profiles


TherMap is an optical characterisation tool developed for assessing the thermal properties of thin films and interfaces in (multi-)layer structures where the thermal performance is of importance, such as in semiconductor wafers. The technology is based on transient thermoreflectance, which utilises the reflection and absorption of laser beams to assess the thermal properties of materials. Unlike earlier characterisation techniques, TherMap is non-invasive, non-contact and does not require lengthy and costly sample preparation. It can obtain high-resolution (0.1 mm) maps of the thermal properties thus providing vital fast feedback for manufacturing optimisation, R&D, and quality control.

This technology is primarily aimed at characterising the variation of thermal resistance in gallium nitride heteroepitaxial wafers. Gallium nitride (GaN) is an emerging wide band gap semiconductor that is increasingly used in high-power electronics and optoelectronics (radio-frequency amplifiers, electric drivetrains, LEDs etc.). Since these devices handle high power densities, the characterisation of thermal properties is crucial to ensure reliability.

TherMap – Rapid, Non-Destructive Thermal CharacterisationUniversity of Bristol

Wafer foundries for GaN-based production.•Device manufacturers for inline wafer inspection •

– results can be used for modelling thermal properties prior to fabrication.

Characterisation of other semiconductors and • various multilayer structures, e.g. thermal coatings and bonding layers.

Highly useful where high heat fluxes and thermal • performance are a matter of concern, e.g. in the aerospace and nuclear industries.


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© CST Global Ltd© University of Bristol© Compound Semiconductor Applications Catapult Ltd© INEX Microtechnology Ltd© Amethyst Research Ltd© CST Global Ltd

Cover photo credits and copyright (from top left to bottom right):

Notes

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Photo credits and copyright inside back cover€¦ · optic communications. Similarly, the adoption of wireless communications has been driven by compound semiconductors that offer