Photosensor with front-end IC - Hamamatsu

S13645-01CR

Compact 16-element APD array suitable for various light level detection (serial output)

Photosensor with front-end IC

www.hamamatsu.com 1

The S13645-01CR is a compact optical device that integrates 16-element Si APD array and preamp. It has a built-in DC feedback circuit for reducing the eff ects of background light. It also provides excellent noise and frequency characteristics.In the S13645-01CR, output can be obtained from any one channel specifi ed in the selection logic.

StructureParameter Symbol Specification Unit

Detector - Si APD array -Photosensitive area (per element) A 1.0 × 0.4 mmElement pitch - 0.5 mmNumber of elements - 16 -Package - Plastic -

Absolute maximum ratingsParameter Symbol Condition Value Unit

Supply voltage (for preamp) Vcc max 4.5 VReverse voltage (for APD) V_APD 0 to VBR VReverse current (DC) IR max 0.2 mADCFB terminal voltage - Vcc + 0.7 VGain terminal voltage - Vcc + 0.7 VChannel selection terminal voltage - Vcc + 0.7 VOperating temperature Topr No dew condensation*1 -40 to +105 °CStorage temperature Tstg No dew condensation*1 -40 to +125 °CSoldering temperature*2 Tsol 260 (twice) °C*1: When there is a temperature diff erence between a product and the surrounding area in high humidity environment, dew condensation

may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.*2: Refl ow soldering, IPC/JEDEC J-STD-020 MSL 3, see P.8Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

Features

High-speed response: 180 MHz Two-level gain switch function(low gain: single output, high gain: diff erential output) Reduced background light eff ects Small waveform distortion when excessive light is incident

Applications

Distance measurement

Photosensor with front-end IC S13645-01CR

2

Electrical and optical characteristics (Ta=25 °C)Parameter Symbol Condition Min. Typ. Max. Unit

Spectral response range λ 400 to 1150 nmPeak sensitivity wavelength λp M=100 - 840 - nm

Photosensitivity S

λ=905 nm, M=50, low gain 31.5 45 58.5

kV/Wλ=905 nm, M=50, high gain 630 900 1170

Breakdown voltage VBR ID=100 μA 120 160 200 VTemperature coefficient of breakdown voltage ΔTVBR - 1.1 - V/°C

Dark current ID M=50 - 0.4 4 nATemperature coefficient of dark current ΔTID M=50 - 1.1 - times/°CTerminal capacitance Ct M=50, f=1 MHz - 1.6 - pFExcess noise figure x M=50, λ=905 nm - 0.3 - -Gain M λ=905 nm 40 50 60 -

Current consumption Icc Low gain 45 65 85 mAHigh gain 45 65 85

Low cutoff frequency fcl Low gain - 0.01 0.1 MHzHigh gain - 0.5 5

High cutoff frequency fch Low gain 120 180 240 MHzHigh gain 100 160 220

Input conversion noise power enf=10 MHz, M=50 - 160 220 fW/Hz1/2f=100 MHz, M=50 - 240 330

Output voltage level - Low gain 0.65 1.15 1.65 VHigh gain 0.5 1 1.5Output offset voltage Voffset High gain - - ±100 mV

Maximum output voltage amplitude Vp-p max Low gain 0.3 -0.6 - VHigh gain 0.4 ±0.8 -Supply voltage Vcc1, Vcc2 3.135 3.3 3.465 VCrosstalk - - -25 -20 dB

Light source

Target object

Measurement distance

Photosensor with front-end IC

Td

Light pulse

Sensor output

KPICC0306EA

Distance measuring methodDistance L is calculated from the time difference Td between the light source's light emission timing and sensor output and the speed of light c.

L = (1/2) × c × Td


3

Spectral response

KPICB0199ED

Wavelength (nm)

Rela

tive

sens

itivi

ty (%

)

(Typ. Ta=25 °C, M=50 at 905 nm)

400 6000

100

800 12001000

20

40

60

80

Dark current vs. reverse voltage

KPICB0200EA

(Typ. Ta=25 °C)

Reverse voltage (V)

Dark

cur

rent

0 20 40 60 80 100 120 140 160 180 2001 pA

10 pA

100 pA

10 nA

1 nA

100 nA

1 μA

100 μA

10 μA

Terminal capacitance vs. reverse voltage

KPICB0201EA

(Typ. Ta=25 °C)

Reverse voltage (V)

Term

inal

cap

acita

nce

0 20 40 60 80 100 120 140 160 180 200100 fF

1 pF

10 pF

100 pF

APD gain vs. reverse voltage

KPICB0202EC

(Typ. Ta=25 °C, λ=905 nm)

Reverse voltage (V)

Gain

0 20 40 60 80 100 120 140 160 180 2000.1

1

10

1000

100


4

Gain vs. reverse voltage

KPICB0242EA

(Typ. λ=905 nm)

Reverse voltage (V)

Gain

70 80 100 120 140 160 180 200 2201

10

100

1000

-10 °C

0 °C

20 °C

40 °C60 °C

80 °C

Gain vs. temperature (typical example)

KPICB0230EB

Temperature (°C)

Gain

(rel

ativ

e va

lue)

-50 500 100

High gainLow gain

Frequency characteristics (typical example)

KPICB0203ED

Frequency (MHz)

Gain

[rel

ativ

e va

lue]

(dB)

(Ta=25 °C, λ=905 nm)

0.1 10 1001 1000-25

-15

-20

-10

-5

5

0

High

Low

Current consumption vs. temperature (typical example)

KPICB0228EB

Temperature (°C)Cu

rren

t con

sum

ptio

n (m

A)-50 500 100

High gainLow gain


5

Truth table

D3 D2 D1 D0 Output0 0 0 0 ch10 0 0 1 ch20 0 1 0 ch30 0 1 1 ch40 1 0 0 ch50 1 0 1 ch60 1 1 0 ch70 1 1 1 ch81 0 0 0 ch91 0 0 1 ch101 0 1 0 ch111 0 1 1 ch121 1 0 0 ch131 1 0 1 ch141 1 1 0 ch151 1 1 1 ch16

Channel

Setting Gain0 Low gain (× 1)1 High gain (× 20)

Gain

Setting Background light elimination function0 ON1 OFF

Note: 0=Vcc × 0.2 V or less, 1=Vcc × 0.8 V or overThe pull-down resistor of the digital input terminal is 10 kΩ.

DC feedback circuit

Block diagram

KPICC0287EF

TIA

DCFB

TIA

DCFB

GND Vcc1 GND Vcc2

VGA

D0DCFB D1 D2 D3

SW1SW2

SW3

out1

out2

Gain

Select logic

Buffer

Buffer

Dummyamp

APD: ch1

APD: ch16

Anode


6

Output waveform examples (Ta=25 °C, M=50, linear region, pulse width=5 ns)

Low gain High gain

KPICB0315EA

Time (ns)

Outp

ut (V

)

(Incident light level: 10 μW)

0 10 20 30 40 50-0.1

0.2

0.1

0

KPICB0316EA

Time (ns)

Outp

ut (V

)

(Incident light level: 70 nW)

0 10 20 30 40 50-0.1

0.1

0.05

0

-0.05

Out2

Out1


7

Tolerance unless otherwise noted: ±0.2Chip position accuracy with respect to the packagedimensions marked*: X, Y≤±0.2, �≤±2°

Photosensitive area 7.9

11.4*

8.0*

1.0

0.4

0.98

0.92.

0

10.8

10 × P0.9=9.0

7.4

0.63

52 ×

P1.27=

2.54 28 × �0.4

ch16ch1

Photosnsitive surfaceGlass

KPICA0101EF

Dimensional outline (unit: mm) Pin connectionsPin no. Function Pin no. Pin no.

1 NC 15 GND2 NC 16 DCFB_dis3 GND 17 NC4 Vcc1 18 Anode5 Vcc2 19 Anode6 out2 20 Anode7 out1 21 Anode8 GND 22 Anode9 Gain 23 Anode10 D3 24 Anode11 D2 25 Anode12 D1 26 Anode13 D0 27 Anode14 Vcc1 28 Anode

Leave terminals 1, 2, and 17 open. Do not connect them to Vcc1, Vcc2, or GND.

Enlarged view of photosensitive area (unit: mm)

KPICC0290EB

1.00

7.90

0.10

0.40

Recommended land pattern (unit: mm)

KPICC0289EB

6.90.9

8.7

9 9.3

10.2 12

0.3

0.3

0.635


8

When using the photosensor with front-end IC in a 50 Ω system, connect resistors with the same resistance (200 Ω in the above figure) to output loads Out1 and Out2. If resistors with the same resistance are not connected to the output loads, the waveform may be distorted or the output may oscillate.

Connection example (50 Ω system)

Anode(Pin No. 18 to 28)

GND(Pin No. 3, 8, 15)

Gain(Pin No. 9)

D[3:0](Pin No. 10 to 13)

DCFB_dis(Pin No. 16)

Vcc1(Pin No. 4, 14)

Vcc2(Pin No. 5)

out1(Pin No. 7)

out2(Pin No. 6)

200 Ω 50 Ω

200 Ω 50 Ω

Vcc

10 nFL

0.1 μF10 nFL

0.1 μF10 Ω

3.3 nF × 3/630 V

10 nF/630 V-HV

KPICC0291EF

The gain of the APD built into the photosensor with front-end IC varies depending on the temperature. The following two methods are available for handling this issue in using the sensor over a wide temperature range.

Temperature correction method, which controls the reverse voltage according to the temperature changeA thermistor or other temperature sensor is installed near the APD to measure the APD’s temperature. The reverse voltage after APD temperature correction is expressed by the following equation using temperature T of the APD.

VR (after temperature correction) = VR (at 25 °C) + (T - 25) × ∆TVBR

Temperature control method, which keeps the APD temperature constantA TE-cooler or an equivalent device is used to maintain a constant APD temperature.

Handling of temperature characteristics of APD gain


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∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 24 hours.∙ The eff ect that the product receives during refl ow soldering varies depending on the circuit board and refl ow oven that are used. Before actual refl ow soldering, check for any problems by testing out the refl ow soldering methods in advance.

Recommended soldering conditions

KPICC0346EA

Tem

pera

ture

(°C)

300

230

190

170

Preheat60 to 120 s

Soldering40 s max.

260 °C max.

Time

Related informationwww.hamamatsu.com/sp/ssd/doc_en.html

Precautions∙ Disclaimer∙ Metal, ceramic, plastic packages∙ Surface mount type products


10Cat. No. KPIC1097E13 Dec. 2020 DN

www.hamamatsu.comHAMAMATSU PHOTONICS K.K., Solid State Division1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81)53-434-3311, Fax: (81)53-434-5184U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218, E-mail: [email protected]: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8, E-mail: [email protected]: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10, E-mail: [email protected] Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, UK, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected] Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01, E-mail: [email protected]: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93 58 17 33, Fax: (39)02-93 58 17 41, E-mail: [email protected]: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, 27 Dongsanhuan Beilu, Chaoyang District, 100020 Beijing, P.R.China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866, E-mail: [email protected]: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886)3-659-0080, Fax: (886)3-659-0081, E-mail: [email protected]

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications.The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of December 2020.

Equivalent circuit

KPICC0310EA

CN15: V_APD

CN6: Out1

CN5: Out2

CN12: Vcc2

CN7: GainCN1,2: GNDCN13: DCFB

200 Ω200 Ω

0.047 μF/630 V

1 kΩ

0.1 μF

10 μF

L

CN4: Vcc1

L

L∙∙∙BLM18PG221SN10.1 μF

10 μF

CN8 to 11 D0 D1 D2D3

Evaluation kit for photosensor with front-end IC C13666-03

Evaluation kit [95 × 72 (H × V) mm] for photosensor with front-end IC is available (with the S13645-01CR). Contact us for detailed information.

Documents

Photosensor with front-end IC - Hamamatsu