PHPT60603PY - Nexperia ag1Lg5Ne ,A•A qVm:A 9ii 5NPwbK 5gKg5pgl Nexperia PHPT60603PY 60 V, 3 A PNP high power bipolar transistor All information provided in this document is subject

PHPT60603PY60 V, 3 A PNP high power bipolar transistor13 January 2014 Product data sheet

1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.

NPN complement: PHPT60603NY.

2. Features and benefits• High thermal power dissipation capability• Suitable for high temperature applications up to 175 °C• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK• High energy efficiency due to less heat generation• AEC-Q101 qualified

3. Applications• Power management• Load switch• Linear mode voltage regulator• Backlighting applications

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VCEO collector-emittervoltage

open base - - -60 V

IC collector current - - -3 A

ICM peak collector current tp ≤ 1 ms; pulsed - - -8 A

RCEsat collector-emittersaturation resistance

IC = -3 A; IB = -300 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- 80 120 mΩ

© Nexperia B.V. 2017. All rights reserved

Nexperia PHPT60603PY60 V, 3 A PNP high power bipolar transistor

PHPT60603PY All information provided in this document is subject to legal disclaimers.

Product data sheet 13 January 2014 2 / 15

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 E emitter

2 E emitter

3 E emitter

4 B base

mb C collector

mb

1 2 3 4

LFPAK56; Power-SO8 (SOT669)

sym132E

C

B

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PHPT60603PY LFPAK56;Power-SO8

Plastic single-ended surface-mounted package (LFPAK56;Power-SO8); 4 leads

SOT669

7. MarkingTable 4. Marking codesType number Marking code

PHPT60603PY 0603PAB





8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - -60 V

VCEO collector-emitter voltage open base - -60 V

VEBO emitter-base voltage open collector - -8 V

IC collector current - -3 A

ICM peak collector current tp ≤ 1 ms; pulsed - -8 A

IB base current - -0.5 A

[1] - 1.25 W

[2] - 3 W

[3] - 5 W

Ptot total power dissipation Tamb ≤ 25 °C

[4] - 25 W

Tj junction temperature - 175 °C

Tamb ambient temperature -55 175 °C

Tstg storage temperature -65 175 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2.[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.[4] Power dissipation from junction to mounting base.

aaa-010424

Tamb (°C)-75 22512525

4

2

6

8

Ptot(W)

0

(1)

(2)

(3)

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm2

(3) FR4 PCB, standard footprint

Fig. 1. Power derating curves





9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

[1] - - 115 K/W

[2] - - 50 K/W

Rth(j-a) thermal resistancefrom junction toambient

in free air

[3] - - 30 K/W

Rth(j-sp) thermal resistancefrom junction to solderpoint

- - 6 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2.[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

aaa-010427

10

1

102

103

Zth(j-a)(K/W)

10-110-5 1010-210-4 10210-1

tp (s)10-3 1031

duty cycle = 1

0.750.50.33

0.20.1

0.050.02

0.010 0.25

FR4 PCB, standard footprint

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values





aaa-010428

10-5 1010-210-4 10210-1tp (s)

10-3 1031

10

1

102

Zth(j-a)(K/W)

10-2

duty cycle = 1

0.750.5

0.33

0.25

0.20.1

0.050.02

0.01 0

FR4 PCB, mounting pad for collector 6 cm2

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values





10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

VCB = -48 V; IE = 0 A; Tamb = 25 °C - - -100 nAICBO collector-base cut-offcurrent VCB = -48 V; IE = 0 A; Tj = 150 °C - - -50 µA

ICES collector-emitter cut-offcurrent

VCE = -48 V; VBE = 0 V; Tamb = 25 °C - - -100 nA

IEBO emitter-base cut-offcurrent

VEB = -8 V; IC = 0 A; Tamb = 25 °C - - -100 nA

VCE = -2 V; IC = -500 mA; Tamb = 25 °C 150 250 -

VCE = -2 V; IC = -1 A; tp ≤ 300 µs;δ ≤ 0.02 ; Tamb = 25 °C; pulsed

150 225 -

VCE = -2 V; IC = -2 A; tp ≤ 300 µs;δ ≤ 0.02 ; Tamb = 25 °C; pulsed

80 130 -

hFE DC current gain

VCE = -2 V; IC = -3 A; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

35 75 -

IC = -1 A; IB = -50 mA; tp ≤ 300 µs;δ ≤ 0.02 ; Tamb = 25 °C

- -100 -225 mVVCEsat collector-emittersaturation voltage

IC = -3 A; IB = -300 mA; tp ≤ 300 µs;δ ≤ 0.02 ; Tamb = 25 °C; pulsed

- -240 -360 mV


- 100 225 mΩRCEsat collector-emittersaturation resistance


- 80 120 mΩ


- -0.89 -1 VVBEsat base-emitter saturationvoltage


- -1.02 -1.2 V

VBEon base-emitter turn-onvoltage

VCE = -2 V; IC = -0.1 A; Tamb = 25 °C - -0.83 -0.9 V

td delay time - 15 - ns

tr rise time - 85 - ns

ton turn-on time - 100 - ns

ts storage time - 350 - ns

tf fall time - 110 - ns

toff turn-off time

VCC = -12.5 V; IC = -1 A; IBon = -50 mA;IBoff = 50 mA; Tamb = 25 °C

- 460 - ns

fT transition frequency VCE = -10 V; IC = -100 mA;f = 100 MHz; Tamb = 25 °C

- 110 - MHz





Symbol Parameter Conditions Min Typ Max Unit

Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;f = 1 MHz; Tamb = 25 °C

- 60 - pF

aaa-010536

200

300

100

400

500hFE

0

IC (mA)-10-1 -104-103-1 -102-10

(1)

(2)

(3)

VCE = −1 V(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 4. DC current gain as a function of collectorcurrent; typical values

VCE (V)0 542 31

aaa-0105373.5IC(A)

2.5

1.5

0.5

0

1.0

2.0

3.0

IB = -50 mA

-5

-10

-15

-20

-45-40-35

-30-25

Tamb = 25 °C

Fig. 5. Collector current as a function of collector-emitter voltage; typical values

aaa-010539

0.4

0.8

1.2

VBE(V)

0

IC (mA)10-1 1041031 10210

(1)

(2)

(3)

VCE = −2 V(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

Fig. 6. Base-emitter voltage as a function of collectorcurrent; typical values

aaa-010540

-0.6

-0.8

-0.4

-1.0

-1.2VBEsat

(V)

-0.2

IC (mA)-10-1 -104-103-1 -102-10

(1)

(2)

(3)

IC/IB = 20(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

Fig. 7. Base-emitter saturation voltage as a function ofcollector current; typical values





aaa-010541

IC (mA)-10-1 -104-103-1 -102-10

-10-2

-10-1

-1

-10

VCEsat(V)

-10-3

(1)

(2)

(3)

IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 8. Collector-emitter saturation voltage as afunction of collector current; typical values

aaa-010542

IC (mA)-10-1 -104-103-1 -102-10

-10-2

-10-1

-1

-10

VCEsat(V)

-10-3

(1)

(2)

(3)

Tamb = 25 °C(1) IC/IB = 50(2) IC/IB = 20(3) IC/IB = 10

Fig. 9. Collector-emitter saturation voltage as afunction of collector current; typical values

IC (mA)-10-1 -104-103-1 -102-10

aaa-010543

1

10-1

102

10

103

RCEsat(Ω)

10-2

(1)

(2)

(3)

IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 10. Collector-emitter saturation resistance as afunction of collector current; typical values

IC (mA)-10-1 -104-103-1 -102-10

aaa-010544

1

10-1

102

10

103

RCEsat(Ω)

10-2

(1)

(2)

(3)

Tamb = 25 °C(1) IC/IB = 50(2) IC/IB = 20(3) IC/IB = 10

Fig. 11. Collector-emitter saturation resistance as afunction of collector current; typical values





11. Test information

006aaa266

- IBon (100 %)

- IB

input pulse(idealized waveform)

- IBoff

90 %

10 %

- IC (100 %)

- IC

tdton

90 %

10 %

tr

output pulse(idealized waveform)

t f

t

tstoff

Fig. 12. BISS transistor switching time definition

RC

R2

R1

DUT

mgd624

Vo

RB(probe)450 Ω

(probe)450 Ω

oscilloscope oscilloscope

VBB

VI

VCC

Fig. 13. Test circuit for switching times

11.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.





12. Package outline

ReferencesOutlineversion

Europeanprojection Issue date

IEC JEDEC JEITA

SOT669 MO-235

sot669_po

11-03-2513-02-27

Unit(1)

mmmaxnommin

1.20

1.01

0.15

0.000.25

0.50

0.35

4.41

3.62

2.2

2.0

6.2

5.8

0.85

0.40

A

Dimensions (mm are the original dimensions)

Note1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669

A1 A2

1.10

0.95

A3 b b2 b3

0.1

L2 w y

8°

0°

θ

b4 c c2 D(1) D1(1) E(1) E1(1)

3.3

3.1

e

1.27

H L

0.25

0.19

0.30

0.24

4.20 1.3

0.80.25

0.9

0.7

4.10

3.80

5.0

4.8

1.3

0.8

L1

A C

1/2 e

w A

0 5 mm

scale

e

E1

b

c2

A2

1 2 3 4

mountingbase

D1

c

E

b2

b3

b4

H D

L2

L1

C

X

y C

q

(A3)

L

A

A1

detail X

Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)





13. Soldering

0.6(3×)

0.7(4×)

0.25(2×)

0.25(2×)

0.6(4×)

4.2

4.7

0.25(2×)

1.27

1.1

2

3.81

0.9(3×)

SP opening =Cu - 0.050

SR opening =Cu + 0.075

2.15

2.55

3.45 3.5

3.3

solder lands

solder resist occupied area

solder paste125 µm stencil

Dimensions in mm

SOT669Footprint information for reflow soldering

sot669_fr

Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)





14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

PHPT60603PY v.1 20140113 Product data sheet - -





15. Legal information

15.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

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Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

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16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................410 Characteristics .......................................................611 Test information ..................................................... 911.1 Quality information ............................................... 912 Package outline ................................................... 1013 Soldering .............................................................. 1114 Revision history ...................................................1215 Legal information .................................................1315.1 Data sheet status ............................................... 1315.2 Definitions ...........................................................1315.3 Disclaimers .........................................................1315.4 Trademarks ........................................................ 14

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 13 January 2014