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Allgemeines: • Möglichst wenige unterschiedliche
Schriftarten/Größen, hier: 88 / 48 / 28 / 24 / 20 pt
• Schriftart: Arial • Farben: aus der Auswahl in der
Formatvorlage verwenden • Leerstelle zwischen Zahl und Einheit • Variablen kursiv (Einheiten nicht!) • Alles in SI (keine sec. bar ist ok) • Achsenbeschriftung Bsp.: Zeit / s
Logos in der Formatvorlage austauschen oder ggf. entfernen Achtung: die EPS-Logos sehen am Bildschirm „komisch“ aus, führen aber zum besten Druckergebnis-
Idea
Project Proposal Results and Outlook
Dies ist ein Beispiel zum Illustrieren der Möglichkeiten der Kombination von Rahmen
N. Wöhrla, O. Ochedowskib, S. Gottliebc, K. Shibasakid, S. Schulza, V. Bucke
a Faculty of Chemistry, AK Schulz, University of Duisburg-Essen, Germany b Faculty of Physics, AG Schleberger, University of Duisburg-Essen, Germany c Master Student, Nanoengineering, University of Duisburg-Essen, Germany d Institute of Materials Science, University of Tsukuba, Japan e Faculty of Physics, AG Buck, University of Duisburg-Essen, Germany
Plasma-enhanced chemical vapor deposition of graphene on metallic substrates
Paper and Presentation
Synthesis
Characterization 3 Plasma spectroscopy
Li X. et al.; Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils. Science 2009, 324
D. Stojanović, N. Woehrl, and V. Buck, “Synthesis and characterization of graphene films by hot filament chemical vapor deposition,” Phys. Scr. T149, 014068 (2012)
How can graphene be synthesized?
L. G. Cançado et al., “Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies,” Nano Lett. 11(8), 3190–3196 (2011)
Paper: N. Woehrl, O. Ochedowski, S. Gottlieb, K. Shibasaki, S. Schulz “Plasma-enhanced chemical vapor deposition of graphene on copper substrates,” AIP Advances 4(4), 047128 (2014).
appliedGRAPHENE - Synthesis, Characterization and Implemenation of Graphene in Energy Applications
CONSORTIUM OVERVIEW:
Dr. Nicolas Wöhrl / University Duisburg-Essen
Prof. Angelika Heinzel / ZBT Duisburg
Dr. Tilo Drüsedau / PT&B Silcor GmbH
Dr. Diana Lazar / INCDTIM Cluj-Napoca, Romania
Dr. Duncan Fagg / University of Aveiro, Portugal
(submitted Sept. 16th 2014)
DPG Spring Meeting 2014: DY 45.1 „Plasma-enhanced chemical vapor deposition of graphene on copper substrates“
Starting point: Deposition of graphene on copper substrates by thermal CVD (surface catalysis)
Challenges: • slow: heating up / low pressure • scaling up: area • defects and impurities: substrate temperature near melting point of Cu (1085 °C)
Aim:
Can we measure the defect density in the graphene…?
…and correlate it with the process and plasma parameters?
Nano Summer Program June 2 - July 20, 2013
Proof of Concept:
shorter process times by
• Mono-Layer of Graphene on large area • BUT: many defects
• direct plasma heating • higher process pressure • dissociation of methane in plasma
Raman spectroscopy:
• Mean distance between defects as measured by I(D)/I(G) und FWHM(G, D) -> LD = 40 nm
• uniform over measured area
Defect density vs. process pressure:
Defect density vs. plasma properties:
• Lower defect density with higher pressure • Lower defect density with lower gas flow
• Lower defect density with higher C2/Hα ratio
Results: • Monolayer graphene on copper and nickel substrates • still defects (from plasma) • faster process: plasma heating / dissociation in plasma • control of defect density by process and plasma
properties
Outlook: • Influence of Plasma properties
on nucleation and growth of graphene
• Specific plasma properties for specific substrate materials
Can we improve the synthesis of Graphene by a MW-PECVD process?
growth control by • correlation of plasma properties
to properties of graphene
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