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8/6/2019 Plastic Electronics 2010 en Proceedings
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Plastic Electronics 2010, October 19-21, Dresden, Germany Kimmo Solehmainen, VTT Technical Research Centre of Finland
Printable, organic, and large-area
realisation of integrated circuits
Kimmo Solehmainen
VTT Technical Research Centre of Finland
PLASTIC ELECTRONICS CONFERENCE
September 19-21, 2010, Dresden, Germany
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Plastic Electronics 2010, October 19-21, Dresden, Germany Kimmo Solehmainen, VTT Technical Research Centre of Finland
Outline
VTT in brief
Bench marks for high-volume OFET production
VTTs focus in OFET fabrication development
EU funded approach for printed, organic, and large arearealisation of integrated circuits aims and targets
OFET fabrication by NIL
Manufacturing platform development for organic electronics
Circuit design and development
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Plastic Electronics 2010, October 19-21, Dresden, Germany Kimmo Solehmainen, VTT Technical Research Centre of Finland
VTT Technical Research Centre of Finland in brief
Personnel 2920 Turnover 276 M (budget for 2010)
VTTs operationsResearch and Development Strategic Research Business Solutions IP Business Corporate Services
VTTs companiesVTT Expert Services Ltd VTT Ventures Ltd VTT International Ltd
Focus areas of research Applied materials Bio- and chemical processes Energy Information and communication
technologies
Industrial systems management Microtechnologies and
electronics Technology in the community Business research
Customer sectors Biotechnology, pharmaceutical
and food industries
Electronics
Energy
ICT
Real estate and construction
Machines and vehicles Services and logistics
Forest industry
Process industry and
environment
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Plastic Electronics 2010, October 19-21, Dresden, Germany Kimmo Solehmainen, VTT Technical Research Centre of Finland
Benchmarks on the road towards high volumeproduction of OFETs
A.C. Huebler et al. Org. Electronics 8, pp. 480-486, 2007
Ring oscillator fabricated completely by means of mass-printingtechnologies
7-stage ring oscillator with frequency of 4 Hz
Channel length 100 m
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Plastic Electronics 2010, October 19-21, Dresden, Germany Kimmo Solehmainen, VTT Technical Research Centre of Finland
Benchmarks on the road towards high volumeproduction of OFETs
M. Voigt et al, Adv. Funct. Mat., 20 (2), 239-246, 2010
OFETs fabricated by thesequential gravure printing ofpolythiophene, two insulatorlayers, and a metal ink gate
Bottom electrodesphotolithographically patternedITO drain and source contacts
Channel length 30 50 m
Gravure
Gravure
Gravure
Gravure
Gate
Insulator 2 (XL)
Insulator 1
Semiconductor
500 m
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Plastic Electronics 2010, October 19-21, Dresden, Germany Kimmo Solehmainen, VTT Technical Research Centre of Finland
Roll-to-Roll Pilot facilities at VTT
4 replaceable printing units
- Gravure, rotary screen,
and flexography units
Corona and lamination units
Drying units (air, UV, IR)
Web width 300 mm
Max. web velocity 10 m/min
2 gravure printing units
R2R hot embossing unit
Corona and lamination
units
Drying units (air, UV, IR)
Web width 200 mm
Max. web velocity 100
m/min
Installed in clean room
(ISO7)
PICO 2003 ROKO 2007
+ 2012 Pilot hybrid production facility R2R compatible die/flip-chip bonding Injection moulding
Pilot Production Facility 2010-
Pilot production machine
- 4 replaceable printing units,
rotary cut, hot embossing,
lamination units
- Web velocity 0.130 m/min
Three unit inert gas atmosphere
printing machine- Gravure and rotary screen
units
- Oxygen level below 1000 ppm
R2R evaporation system
- 5 thermal evaporation sources
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Printing of electronics vs. traditional printing
Printing of a
semiconductor
smoothlayer is needed
Printing of colors
Pixels looksmooth to eye
(microscopically
smooth layer is notneeded)
Yellow
Green
Yellow
Grey
Smooth layersby ink and
processdevelopment
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POLARIC EU FP7Printable, organic and large-area realisation of
integrated circuits
DemonstratedOrganic complementary inverter circuitsprinted continuously and reliably
< 5 VOperation voltage for an organic IC
< 1 mTransistor channel length
< 100 nmInsulator layer thickness
POLARIC targetTarget specification
DEMONSTRATION BY LARGE-AREA PROCESSING
METHODS ON FLEXIBLE SUBSTRATE
POLARIC aims for increasing the performance of organicelectronics and take steps towards high volume fabrication.
The POLARIC target compared tothe current state-of-the-art inorganic electronics.
Demonstrators: active matrix LCD & RFID tag
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A
D
Egate structuring
hot-embossing orUV-NIL
stamp release
F metal evaporation
G lift-off
H semiconductordeposition
C
B dielectric deposition
resist deposition
OFET fabrication by NIL
C. Auner et al., Org. Electronics 11, 552 (2010), by Joanneum Research Forschungesellschaft mbh
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Goal:
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Benefits of self-aligned R2R fabrication
concepts for OFETs
OFET cut-off frequency proportional to 1/L and 1/Cp,where L is channel length and Cp parasitic capacitance
Parasitic capacitance can be decreased by minimisingthe overlap between gate and source/drain electrodes
Patterning of the gate and registration of the electrodesneeded
However, registration accuracy improvement in R2Requipments limited
Need for self-aligned R2R OFET fabrication concept
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Self-aligned OFET fabrication by NIL
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Considerations regarding self-aligned processing
Complete circuitry adds complexity (in respect to thebasic transistor fabrication)
E.g. even simplest backplane layout require many moreprocess steps and true multilayer processing
Usually every layer needs patterning and registration
limitation to the resoluton of the application
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Integration of nanoscale and millimeter scale dimensions
Development of focused ion beam techniques to realise Ni shims forlarge-area roll-to-roll based NIL processing
Transfer of laboratory scale key component processes and materialsto large scale manufacturing
Environmental evaluation and disposability
Goal:R2Rto
oling
Development of manufacturing
platforms for OFETs
G
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Complexity = time x cost
Levelofdesign
orprocess
Logic functione.g. NAND
OFETe.g. I-V characteristics
Test Circuite.g. shift register
Demonstrator
Componente.g. gate capacitance
Goal:Design
&modelling
Circuit development
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VTT Technical Research Centre of Finland (coordinator)3D-MicromacAMOBASFCSEM
Cardiff UniversityFraunhofer-Gesellschaft IZMIMECImperial College London
Joanneum Researchmicro resist technologyObducat TechnologiesAsulab, a division of The Swatch Group Research and Development Ltd.
Project partners
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Plastic Electronics 2010, October 19-21, Dresden, Germany Kimmo Solehmainen, VTT Technical Research Centre of Finland
Roles of the partners
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Plastic Electronics 2010 October 19 21 Dresden Germany Kimmo Solehmainen VTT Technical Research Centre of Finland
Acknowledgements
POLARIC EU project partners
The research leading to these results has received funding from theEuropean Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement n247978.