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・The uniform deposition of Graphene oxide(GO) films was performed using a distilled water by Chemical Mist Deposition (CMD).
・Incorporation of GO in PEDOT:PSS/n-Si solar cell improves device performance.
・The uniform coating of conductive PEDOT:PSS was realized on the textured c-Si<100> wafer by CMD.
The European Materials Forum- Strasbourg, France
Chemical mist deposition of graphene oxide and PEDOT:PSS films for
crystalline Si thin-film solar cells
Fil
m t
hic
kn
ess
(n
m)
Fil
m t
hic
kn
ess
(n
m)
Time (min) Vm (V)
(a) (b)
Fil
m t
hic
kn
ess
(n
m)
Fil
m t
hic
kn
ess
(n
m)
Time (min) Vm (V)
(a) (b) (c)
mist
10mm
3mm
Schematic of the CMD apparatus GO deposition by CMD
Takashi Imamura1 , Ishwor Khatri1 ,Akira Uehara2, Ryo Ishikawa1, Keiji Ueno1, and Hajime Shirai1 1The Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 858-3676, Japan 2 Challenge Co.Ltd. 3124 Kamimizo, Sagamihara, Kanagawa 252-0243, Japan
AFM images of the GO on th-SiO2 with different solvent solutions
Changes of the film thickness of GO flake coated at different (a)
deposition times ,(b) Vms, and (c) distance D.
1.2nm1.2μ m
GO:1~2 Layer
1.2nm1.2μ m
GO:1~2 Layer
Mie scattering image
of the GO (0.1 wt%)
C-Si/GO/PEDOT:PSS heterojunction
solar cells
GO and PEDOT:PSS conjugated polymer
films on textured c-Si<100> wafer by CMD
Summary The c-Si/GO/PEDOT:PSS solar cells fabricated by CMD showed η of 9.27% with Jsc of 27.99 mA/cm2, Voc of 0.52 V and FF of 0.63.
The improved performance with insertion of GO in c-Si/PEDOT:PSS solar cells demonstrate effective hole transportation.
The CMD is attractive for the uniform coating of GO and PEDOT:PSS conjugated polymer films on hydrophobic c-Si<100> wafer.
solvent εr
Acetone 20.7
MeOH 32.6
Water 78.5
Hummers method
Oxidation
Ultrasonic Peeling
Time:3 min.
Vm:5 kV
D:10 mm
Vm:0 kV
D:10 mm Time:3 min.
D:10 mm Time:3 min.
Vm:5 kV
5 min. 10 min.
Red…2.4 MHz
Blue…Normal
Ultrasonic
The mean particle
size of ZrO
D
DC power
source
2.4 MHz Ultrasonic atomization device
Ag Ag
GO
PEDOT:PSS
Al
N type C-Si<100>
Vm:5 kV
D:4 mm
Jsc (mA/cm2)
Voc (V)
F.F Eff (%)
Pristine 27.85 0.51 0.60 8.76 3min. (GO) 27.99 0.52 0.63 9.27
Summary of typical
Photovoltaic parameters
Device structure