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  • Poster Presentations

    2nd Day

    16 June 2010

    ID: B754 - F1166

    6th Nanoscience and Nanotechnology Conference, İzmir, 2010

  • Pure Carbon Plasma in TVA and DLC Thin Films USuat PatUP1P*, Sadan KorkmazP1P, Zafer BalbagP2P and Naci EkemP1



    1 PDepartment of Physics, Eskisehir Osmangazi University, Eskisehir, 26480, Turkey 2

    P Education Faculty of Eskisehir Osmangazi University, Eskisehir,26480,Turkey

    Abstract-Thermionic Vacuum Arc (TVA) is a new technology for thin film deposition. This technology has been supplied great advantages to growth thin films like compact, low roughness, nanostructures, homogeneities, adhesive, high deposition rate etc. A lot of materials were used for thin films production and characterization. TVA technology is gives ability to growth pure thin films and alloys thin films. Biggest application of TVA is thin films of high melting point materials like C, W, Mo, Nb, Ta, Re, B etc. Also, TVA cans ability to growth thin films for photovoltaic

    applications and optoelectronic materials. TVA is a new technology for pure thin film deposition. TVA has different properties of other vacuum thin films technologies. Some differences and advantages of TVA are summarized in following [1-2];

    � not need a buffer gas and gas mixing for ignition the plasma,

    � thin films produces with high energetic ions, � high refractivity for metallic thin films, � plastic and texture were coated, � low melting materials as polymers can be coated, � optical devices as mirror, lenses can be coated with

    refractory materials, � in-situ and ex-situ deposition will be realized this

    technique with any deformations, � semiconductor, insulator, refractory materials and

    dielectric thin films can be growth in amorphous and crystal structure,

    Produced thin films are in high purity, compact, homogeneous, nanostructures, high adherence, low roughness, low contamination, low stress, high deposition rate and etc [1- 2]. Experimental arrangement of TVA was shown in Figure 1.

    Figure 1. Experimental arrangement TVA has double electrodes. Cathode is a special electron gun which changeable to desire options. Anode is made from refractor materials like wolfram, Molybdenum, Tantalum and Carbon. Voltage- current graph of pure carbon plasma was shown in Figure 2. Pure carbon plasmas were generated with filament currents of 56 A and 70 A. As soon as generated a plasma in vacuum chamber, applied voltages were drop suddenly. SEM and TEM images of DLC (Diamond Like Carbon) thin films were shown in fig.3, respectively.

    Figure2. Voltage-currents graphs of pure carbon plasma

    Figure 3. (a) SEM , (b) TEM images of DLC thin films.

    Fig.4 AFM images of DLC thin film Figure 4. is AFM images of DLC thin film. This research activity has been supported by scientific research committee of Eskisehir Osmangazi University under the project number of 200819045. *Corresponding author: [email protected] [1] Musa G., Ehrich H., Schuhmann J., Pure metal vapor source with controlled energy of ions, (1997) IEEE Transactions on Plasma Science, 25 (2) pp.386-391. [2] N. Ekem, G. Musa, S.Pat, Z.Balbag, I. Cenik , R. Vladoiu, J. Opt. and Adv. Mater, Vol. 10, No. 3, March 2008, p. 672 – 674 [3] G. Musa, I. Mustata, M. Blideran, V. Ciupinaa, R. Vladoiua, G. Prodana, E. Vasilea, Journal of Optoelectronics and Advanced Materials Vol. 5, No. 3, September 2003, p. 667 - 673 [4]G.Musa, I.Mustata, V.Ciupina, R.Vladoiu, G.Prodan, E.Vasile, H.Ehrich , Diamond and Related Materials 13 (2004) 1398–1401

    (b) (a)

    Poster Session, Wednesday, June 16 Theme B754 - F683

    6th Nanoscience and Nanotechnology Conference, �zmir, 2010 417

  • Optical properties of AlN Thin Films Deposited by RF Reactive Sputtering U Suat PatUP1P*P Pand Mehmet KokkokogluP1

    1 PDepartment of Physics, Eskisehir Osmangazi University, Eskisehir, 26480, Turkey P

    Abstract-Optical properties of deposited AlN thin films were investigated by measuring the transmittance spectra. Transparencies of the deposited AlN films at x=0.4 and 0.3 shown highest transparency concentrations were exhibit approximately ~100% in weak absorption and near

    visible and near infrared regions. Additionally, XRD and AFM measurements were investigated.

    Aluminum nitride (AlN) thin films with wurzite hexagonal structure have received great interest because of its excellent physical properties like thermal conductivity (3.2W/mK), chemical stability, high hardness, high acoustic velocity, large electromechanical coupling coefficient and a wide band gap (5.8-6.2 eV). AlN thin films are promising candidate for electronic material for thermal dissipation, dielectric and passivation layers, surface acoustic wave (SAW) devices and photoelectric devices [1-14]. For these applications, AlN thin films deposition and characterization are very important. As an optical material, it is important to understand its fundamental optical properties. But, the optical constants of AlN thin film are still unclear [1, 10-13]. These methods were shown the optical parameters like transmittances, absorbance, reflection, reflection index, extinction coefficient, bang bap, reel dielectric; imaginary dielectric constants were determined by using Uv-Vis spectrophotometers (200-1100nm). Transmittance values are deposited AlN thin films at x=0.4 and 0.3 (x value corresponds the nitrogen concentrations of Ar-NR2R mixed gas plasma) were shown in fig.1 where these values were compared with transparency of reference glass slide (RGS) in fig.1.

    Figure 1. Transmittance spectra of x=0.4, 0.3 and RGS As can be seen from fig.1, transmittance spectra of deposited thin films is higher than the reference glass slides (RGS) in near infrared region. Incident lights is describing following;


    According to the relation, A+R+S is very lower. That is, any loss were not seen to our measurements in near infrared region. This properties is most important parameter of infrared telescope, thermal camera and night-vision system and detectors. Refractive index is define following equations;


    where, nRoR is a reel part of refractive index. K is the extinction coefficient of deposited thin films. According to our

    measurements, nRoR was lower from 1.40 and extinction coefficient is approximately 0.17. deposited thin films refractive index lower from the RGS, which this properties is most wanted properties of optical coatings. Additionally K value is proportional to transparency.

    AFM images of deposited AlN thin films was seen in Figure 2. Figure 2. AFM image of deposited An thin films (given in example) Rms roughness of the thin films decreased from 60.20 nm to 12.50 nm. Grain size of deposited thin films were approximately 260nm. *Corresponding author: [email protected] [1] X.D. Gao, E.Y. Jiang, H.H. Liu, G.K.Li, W.G.Mi, Z.Q.Li, P.Wu and H.L.Bai, phys. stat. sol. (a) 204, No.4, 1130-1137 (2007) [2] H.Cheng, Y.Sun, P.Hing, Surface and Coatings Technology, 166, (2003), 231-236 [3] A.Balandin, K.L.Wang, J.Appl.Phys. 84 (1998) 6149-6153 [4]A.F.Belyanin, L.L.Bouilov, V.V.Zhirnov, A.I.Kamenev, K.A.Kovalskij, B.V. Spitsyn, Diamond and Related Materials, 8(1999) 369-372 [5] N.Matsunami, S.Venkatachalam, M.Tazawa, H.Kakiuchida, M.Sataka, Nuclear Instruments and Methods in Physics Research B 206 (2008) 1522-1526 [6]M.Fujiki, M.Takahaski, S.Kikkawa, F.Kanamaru, Journal of Materials Science Letters 19, 2000, 1625-1627 [7]M.Garcia-Mendez, S.Morales-Rodriguez, R.Machorro and W.De La Cruz, Revista Mexicano De Fisica 54 (4) 271-278 (2008) [8] Y.J.Lee, Journal of Crystal Growth 266 (2004) 568-572 [9] J.F.Falth, S.K.Davidson, X.Y.Liu and T.G.Anderson, Appl. Phys. Lett.87, 161901 (2005) [10] B.Monomar, J.Cryst.Growth 1,189 (1998) [11] M.Strassburg, J.Senawiratne, N.Dietz, U.Haboeck, A.Hoffmann, V.Noveski, R.Schlesser and Z.Sitar, J.Appl. Phys 96, 5870 (2004) [12] A.Fara, F.Bermardini and V.Fiorentini, J.Appl. Phys. 85, 2001 (1999) [13] N.Nepal, K.B.Narn, M.L.Nakarmi, J.Y.Lin, H.X.Jiang, J.M.Zavada and R.G.Wilson, Appl.Phys.Lett.84, 1090 (2004)

    Poster Session, Wednesday, June 16 Theme B754 - F683

    6th Nanoscience and Nanotechnology Conference, �zmir, 2010 418

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