Power Semiconductors technologies trends for E-Mobility · Power Semiconductors technologies trends for E-Mobility ... NCP = Normalized Channel Perimeter ... •Improved Rds

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Power Semiconductors technologies

trends for E-Mobility


Gianni Vitale

Power Conversion & Drives Section Manager

System Lab, STMicroelectronics

NESEM 2013, Toulouse

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Outline 2

• Semiconductor Market Outlook in Automotive

• Technology positioning for E-Vehicles applications

• Silicon Technology Evolution

• Low Voltage MOSFETs

• High Voltage MOSFETs

• IGBTS

• New WBG Materials (SiC & GaN)

• Next Steps & Challenges

2

Semiconductor Market Outlook in

Automotive

3

Pervasiveness of Semiconductors 4

Source: Strategy Analytics, IHS iSuppli, Automotive, April 2013

Key Products in E-Vehicles:

8/32 Microcontrollers, MEMS, RF ICs,

Smart Power ASICs, Gate Drivers,

Power MOSFETs, IGBTs, Rectifiers,

Power Modules

HEV/EV Power Semiconductors Demand

0

250

500

750

1000

1250

1500

2012 2013 2014 2015 2016 2017 2018 2019

$ M

illi

on

16%

CAGR

Source: Strategy Analytics, AES System & Semi Demand Market Overview Q4 2012

5

1.4B$

Million units of HEV in 2019

• Micro Hybrid: 46 M/u

• Mild Hybrid: 3.2 M/u

• Full Hybrid: 3.36 M/u

Technology positioning for E-Vehicles applications

6


Electric Vehicles main blocks 7

by degree of hybridization

M Air-con

inverter

M ICE cooling

inverter

Power

steering

inverter M

On-board

charger

Fast charging

(DC)

Home

outlet

(AC)

(Not in HEV)

HV battery pack

(200V to 450V)

Cells

balancing

Traction

inverter

El motor /

generator

ICE

(no EV)

DC/DC

converter

HEV

ECU

Hybrid drive

unit (HDU)

HV Bus

DC/DC

converter

Aux LV

battery

(12V or 24V)

Battery module

Aux. DC/DC converters

Power: 1.5kW-4kW

Main inverters

Power: 10kW-100kW

On Board Charger

Power: 1.5kW-50KW

BU

S <

60V

B

US

>60V

Micro-Hybrid

Mild-Hybrid

Full-Hybrid Can run on just ICE, just

batteries, combination of both

ICE with Start/Stop, electrical

assistance, regenerative braking

ICE with Start/Stop and

(optionally) regenerative breaking

Fast

Charger

Smart

Meter

PLM ISO15118

Fast

charging

(DC)

Three

phase

mains

(AC)

Fast Charger

Power: 50kW-100KW


Electric Vehicles Technology mapping 8

Micro-Hybrid

Mild-Hybrid







BU

S <

60V

Application

DC/DC Converter

AC/DC Converter

Inverter

Power Transistor

Voltage Class

80-150V

500-600V

40-100V

DC/DC Converter

AC/DC Converter

Inverter

600-650V

80-150V

500-600V

600/1200V

Trench

STripFET VII DeepGATE

Planar

STripFET III

Super Junction

MDmesh V

Trench


Super Junction

MDmesh V

IGBT

Trench Gate Field Stop

BU

S >

60V

Silicon Technology Evolution

9


Planar

STripFET II Planar

STripFET III

Trench

STripFET VI DeepGATE

Trench STripFET VII DeepGATE

Te

ch

no

log

y fe

atu

res

Ideal for synchronous rectification

Additional

features:

• JFET enhancement

• m-Trench

Better RDS x Silicon Area than past gen

Lowest RDS x Area

Better performance of intrinsic diode

Crss/Ciss ratio optimized for

motor control

High ruggedness in linear mode operation

LV MOSFET Technology Overview 10

STripFET III

“H3”/”F3” (Planar)

20 - 100V N-Channel

STripFET V

“F5” (planar)

40 V N-Channel


“F6”

(trench) 40 – 60 V N-Channel


“F7” (trench)

40 – 120 V

N-Channel

LV MOSFET Technology evolution 11

NCP = 1.50

NCP = 1

Pitch

NCP = 1.33

NCP = 1.80

NCP = Normalized Channel Perimeter

NCPRch

1


“F6”

(trench) 30 – 80 V P-Channel

500V

1000V

1500V

800V

600V

200V

Normalized RDS(on) x Area

1 0.8 0.7 0.5 0.30 0.15 0.25

Super-junction

Su

pe

rME

SH

“N

K s

erie

s”

Planar

Su

pe

rME

SH

3 K

3

“N

…K

3 s

erie

s”

HV Power MOSFET Technology Overview

MD

mesh

II

“N

M…

N”

MD

me

sh

II

Plu

s L

ow

Qg

“N

…M

2”

Su

pe

rME

SH

5

“N

…K

5”

MD

mesh

V

“N

…M

5”

MD

mesh

VI

N…

..M6

12

HV MOSFET Technology evolution 13

SuperMESH “NK series” (400 ÷ 1500)V

• Standard technology

• Improved Rds(on) * Area vs previous generation

MDmesh II / FDmesh II “NM..N & NM..ND” series (600 ÷ 650)V

• SuperJunction structure

• Improved Rds(on) * Area vs std junction generation

• Fast Diodes version (Fdmesh)

MDmesh V “ N..M5” series (600 ÷ 650)V

• Improved SuperJunction structure

• Improved Rds(on) * Area vs previous generation II

• Optimized RDS(on)*Qg

• Higher VDSS rating

RDS(on) /Qg State-of-the-art

Best cost/performance solution

HV Power MOSFETs product optimization

MD

me

sh

II

MD

me

sh

VI

RDS(on) /Qg Evolution

MD

me

sh

V

MD

me

sh

II

Plu

s L

ow

Qg

650V

600V 600V

Best efficiency solution

650V

Technology Evolution

650V

14


IGBTs Trench Gate Field Stop:

Technology Milestones and Features 15

Planar

410µm

collector

emitter gate

n-

n+ (field-stop)

p-

p++ n+

p+ (substrate)

Technology Milestones

Implanted Back Emitter

Implanted Field Stop

Optimized P-N-P BJT

Trench Gate

Thin wafer thickness

Benefits

Lower EOFF due to improved minority carrier recombination

High switching robusteness (Large RBSOA)

Lower VCE(sat)

Lower RTH

110 µm 1200V 70µm 600V/650V n-

n (field-stop)

p- (base)

p++ n+

collector

emitter gate

p+

Trench FS

600V Planar PT

“NC”

Electronic Irradiation

Gen II

600V Adv Planar PT

“ HF”

Electronic Irradiation

Gen III


600V - “V” “Very high

speed”

1200V- ”H” “High speed”


650V – “M” “Low Loss”

1200V- ”H”

“High speed” Gen II


1200V – “M” “Low loss”

Gen II

IGBT Technology Evolution 16

Gate

Collector

Emitter

N- Basis

N+ buffer

Collector

EmitterGate

N+ buf fer (EPI)

P+ Emitter

substrate

N- Basis

(EPI)

FS

PT

New WBG Materials (SiC & GaN)

17


IGBT “STD-series”

Punch-through PowerMESH technology

IGBT “H-series”

High Frequency

Trench Gate Field-Stop

175 °C rated

“SiC” MOSFET

Silicon Carbide MOSFET

200 °C rated

IGBT “V-series”

Trench Gate Field-Stop

Fast IGBT

Mdmesh VI MOSFETs

650 V

“GaN” HEMT

650 V, truly normally-off

18

Time Today

Breakthrough

Technology

650V

1200V

Technology breakthrough

650V 1200V

Rated Voltage 1kW

5kW

10 kW

30 kW

50 kW

100 kW

350

KW

Pw

NETCOM, SERVER, NOTEBOOK

POWER SUPPLY HOME APPLIANCE

HEV / EV

PHOTOVOLTAIC

HEV / EV

PHOTOVOLTAIC

INDUSTRIAL DRIVES

POWER Supply & UPS

RAIL TRACTION

SMART POWER GRID

WIND MILLS

GaN

SiC

LV & SJ TAM

SiC & GaN Application Map 19


1200V SiC MOSFET vs 1200V IGBT

SiC

Device Von

typ (V)(@

25°C, 20A

Von typ (V) (@

175°C, 20A

Eon (uJ)

@ 20A, 900V

25°C/175°C

Eoff(uJ)

@ 20A, 900V

25°C/175°C

Chip

size

SiC

MOSFET 2 2.4 725/ 965(*) 245/307 0.45

IGBT 1.95 2.35 2140/3100 980/1850 1

SiC MOSFET vs. Best in Class IGBT Results measured on first samples (1200V /

30A/100m)

(*) Eon measured by using the SiC intrinsic body diode

+ 30 % at 175°C

+ 90 % at 175°C

20


600 V GaN HEMT vs. SJ MOSFETs & IGBT.

Qualitative Comparison

21

Si

SJ MOSFETs

(up to 30A)

Si

IGBTs

(up to 200 A)

GaN

Normally off

Driving

Requirements Standard

Standard

Quite Complex

Conduction

Losses Low Extremely low Very Low

Operation Speed Fast Slow to Medium Very Fast

Reverse Mode

Capability

Not good Good

External freewheeling diode Very Good

Bridge Performance Poor Good Superior

Technology

Maturity 100 % 100 % 30%

COST/A

Normalized 1.5 1

3

same as Si

in the next 5 years


600V GaN HEMT vs. Silicon Technologies

• Small recovery current and low Qrr Diode:

• Ideal for Bridge topologies (Inverter)

• Save freewheeling diode smaller system

• Can replace 600V IGBT and MOSFETs

• Very High switching speed is allowed: • Save passive components lighter & smaller system

3KW Boost Converter

22


From Technology to products 23

Micro-Hybrid

Mild-Hybrid







BU

S V

OLTA

GE

<60

V

BU

S V

OLTA

GE

>60

V

Features:

• 60KW Inverter

• 1200V/300A

• SiC MOSFETs

• Size 170x100 mm

• 40% Size reduction vs IGBTs

solution

Power Module for Electric Turbine

Power Module for Electric Vehicle Features:

• 18KW Inverter

• 100V/500A

• Trench STripFET VII

DeepGATE

• Size 126x52 mm

• Leakage inductance <12nH

• Improved Thermal efficiency


Heterogeneous Integration

• Getters

• Polymers

• Shape Memory Alloy

• Piezoelectric (PZT)

• SiC & GaN

• Graphene

Next Steps & Challenges 24

• Wafer Level Packaging

(Staked Multi Dice)

• New interconnections

(Bondless. Sintering, Cu on Cu)

• Smart System In Package (SiP)

• Moore’s Law: Miniaturization

• More than Moore: Functionalities

• 3D Structure : i.e. MEMS

• Through-Silicon Vias

• Galvanic Isolation

• Orientation & Localization

Algorithms

• Embedded Predictive &

Reactive Capabilities

C

New Materials Silicon Technologies

Package IPs & Software

Thanks

25

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Power Semiconductors technologies trends for E-Mobility · Power Semiconductors technologies trends for E-Mobility ... NCP = Normalized Channel Perimeter ... •Improved Rds