PRELIMINARY DATASHEET · Preliminary Datasheet CGY2170YHV/C1 2 / 13 Website : OMMIC 2, Rue du Moulin – BP. 11 94 453 Limeil-Brévannes – FRANCE Email : [email protected] LIMITING

PRELIMINARY

DATASHEET

CGY2170YHV/C1

6-bit X-Band Core Chip

Website : www.ommic.com

OMMIC 2, Rue du Moulin – BP. 11

94 453 Limeil-Brévannes – FRANCE Email : [email protected]

DESCRIPTION

The CGY2170YHV/C1 is a high performance GaAs MMIC T/R 6–bit Core Chip operating in X-band. It exhibits 3 RF ports including 3 switches. It includes a 6-bit phase shifter, a 6-bit attenuator, and switches. It has a phase shifting range of 360° and a gain setting range of 31,5dB. It covers the frequency range from 8 to 12 GHz and provide 5.8dB of gain at 10GHz. It can be used in Radar, Telecommunication and Instrumentation applications. The on-chip control logic with serial input register minimizes the number of bonding pads and greatly simplifies the interfacing to this device.

This die is manufactured using OMMIC’s 0.18 µm gate length ED02AH pHemt technology. The MMIC uses gold bonding pads and backside metallization and is fully protected with silicon nitride passivation to obtain the highest level of reliability. This technology has been evaluated for space applications and is on the European preferred parts list of the European space agency.

APPLICATIONS

AESA Radar

Telecommunication

FEATURES

Operating Range : 8 GHz to 12 GHz

Gain Tx/Rx : 5.8 dB at 10 GHz

RMS Phase Error ≈ 4.0° at 9-10 GHz

RMS Amplitude Error ≈ 0.5 dB at 8-11 GHz

Output P1dB Tx ≈ +12 dBm

Output P1dB Rx ≈ +12 dBm

S11 & S22 < -12 dB @ 10 GHz (all states)

Total Power Consumption ≈ 0,36 W

QFN size: 7 x 7 x 0.9 mm

Tested, Inspected Known Good Die (KGD)

Samples Available

Block diagram of the CGY2170YHV/C1

Preliminary Datasheet

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LIMITING VALUES

Tamb = 25 °C unless otherwise noted

Symbol Parameter Conditions MIN. MAX. UNIT

VDN Positive supply voltage -1 +5 V

VSN Negative supply voltage -5 +1 V

Vss Digital negative supply voltage -6 0 V

VD1,2,3 Drain supply voltage 0 +6 V

DIN, CLK and LE Digital data input -1 +7 V

PIN Input power +25 dBm

Tj Junction temperature +150 ° C

Tstg Storage temperature -55 +150 ° C

THERMAL CHARACTERISTICS

Symbol Parameter Value UNIT

Rth(j-a) Thermal resistance from junction to ambient (Ta = 25 °C) TBD ° C/W


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CHARACTERISTICS

Tamb = 25 °C – Typical RF Performance are given at 10 GHz unless otherwise noted. Min and Max values are given for all the 8-12 GHz frequency band.

Symbol Parameter Conditions MIN. TYP. MAX. UNIT

DC Supplies

VDN Positive supply voltage 2.5 3 3.5 V

VSN Negative supply voltage -2.5 -3 -3.5 V

Vss Digital negative supply voltage -3 V

VD1,2,3 Drain supply voltage 2,5 3 3,5 V

RF Performance at 10 GHz unless otherwise specified

BW Bandwidth 8 12 GHz

G Gain Tx/ Rx 5

5.6 @ 8GHz

7,5 dB 5.8 @ 10GHz

6.3 @ 12GHz

NF Noise Figure at reference state TBD dB

S11, S22 Input reflection coefficients (all states) -12 -10 dB

ISO Switches isolation 35 dB

ATTRange Attenuation range 31.5 dB

ATTerror (RMS)

RMS Attenuation Error wrt the 64 Attenuation States & at Reference Phase State

0.5 0.7 dB

ATTvariation Attenuation variation wrt the 64 Phase States & at Reference Attenuation State

1,25 1,55 dB

PHRange Phase range -354 °

PHerror (RMS) RMS Phase Error wrt the 64 Phase States & at Reference Attenuation State

4 @(9-11GHz) 5@ 8GHz

° 4.5 @(8-12GHz)

4.8@9-11GHz

5.2@12GHz

PH variation Phase Variation wrt the 64 Attenuation States & at Reference Phase State

± 5 [0-24dB]. ±8 [24-31.5dB]

°

P1dB Output 1dB compression point 11 13 dBm

Tswitch Switching time 30 ns

Rate Serial data rate 20 > 230 Mbps

Note : The RMS value is the root mean square of the error defined as below :

_

Where xi is the difference between the measured value and the theoretical value, xi is the mean value of the N xi, and σxi is the standard deviation of xi. Caution : This device is a high performance RF component and can be damaged by inappropriate handling. Standard ESD precautions should be followed. OMMIC document “OM-CI-MV/ 001/ PG” contains more information on the precautions to take.


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ON BOARD MEASUREMENTS – S PARAMETERS

Measured on Input ports at nominal power supply voltages and at T = 25 °C.

0

1

2

3

4

5

6

7

8

9

10

8 9 10 11 12

Frequency (GHz)

S21 (dB) All Phase States - Reference Attenuation States

-150

-140

-130

-120

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

8 9 10 11 12

Frequency (GHz)

S12 (dB) All Phase States - Reference Attenuation State

-40

-35

-30

-25

-20

-15

-10

-5

0

8 9 10 11 12Frequency (GHz)

S22 (dB) All Phase States

-40

-35

-30

-25

-20

-15

-10

-5

0

8 9 10 11 12Frequency (GHz)

S11 (dB) All Phase States


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ON BOARD MEASUREMENTS – PHASE SHIFTER RESPONSE

Measured on Input ports at nominal power supply voltages and at T = 25 °C and attenuation reference state.


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ON BOARD MEASUREMENTS – ATTENUATOR RESPONSE

Measured on Input ports at nominal power supply voltages and at T = 25 °C and phase reference state


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ON BOARD MEASUREMENTS – PHASE SHIFTING ERRORS

Measured on Input ports at nominal power supply voltages and at T = 25 °C.


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ON BOARD MEASUREMENTS – ATTENUATION SHIFTING ERRORS

Measured on Input ports at nominal power supply voltages and at T = 25°C


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DATA

Bit Number Name Reference State Value Description

B0 SD0 High Standby for Rx ST_RX

B1 ST1 High 5,625°

Shifter on Tx

B2 ST2 High 11,25°

B3 ST3 High 22,5°

B4 ST4 High 45°

B5 ST5 High 90°

B6 ST6 High 180°

B7 SR1 High 5,625°

Shifter on Rx

B8 SR2 High 11,25°

B9 SR3 High 22,5°

B10 SR4 High 45°

B11 SR5 High 90°

B12 SR6 High 180°

B13 ATT1 High 0,5dB

Attenuator on Tx

B14 ATT2 High 1dB

B15 ATT3 High 2dB

B16 ATT4 High 4dB

B17 ATT5 High 8dB

B18 ATT6 High 16dB

B19 ATR1 High 0,5dB

Attenuator on Rx

B20 ATR2 High 1dB

B21 ATR3 High 2dB

B22 ATR4 High 4dB

B23 ATR5 High 8dB

B24 ATR6 High 16dB

B25 SD1 High Standby for Tx ST_TX

CONTROL VOLTAGE (CMOS STANDARD LOGIC)

State Vmin Vmax

Low 0 V 1 V

High +2.5 V VDN

EXTERNAL ADDITIONAL ATTENUATION CAPABILITY

To compensate process variation,one variable attenuator is inserted between phase-shifter and first amplifier. The 2 x 1dB gain adjustment is obtained with an analog voltage applied on 1 additionnal PAD : AT2. The core-chip gain is 5.8dB for AT2=-0.9V.


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TIMING DIAGRAM

• The serial data input is controlled by falling edge of signal CLK and will be shift registered in 26-bit shift register and will be latched on LE rising edge and complete data update. • The control data during transmission and receiving are saved in two independent latches. Under the control of the T/R switch pulse, the control data will control phase shifter and attenuator in Time division Multiplexer (TDM). new data 1: SR1~SR6 for PHS;ATR1~ATR6 for ATT( TR=”0”,in Rx mode). new data 2: ST1~ST6 for PHS;ATT1~ATT6 for ATT( TR=”1”,in Tx mode). The delay time [t1] is defined by the user. [tSD] : Tx/Rx switching time [tLD] : [tDU] data latching time

SWITCHES CONTROL

Tx Mode Rx Mode

Low (0V) T/R

High (3V) T/R


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MECHANICAL INFORMATION

Caution : This device is a high performance RF component and can be damaged by inappropriate handling. Standard ESD precautions should be followed. OMMIC document “OM-CI-MV/ 001/ PG” contains more information on the precautions to take. Note all measurements are in millimetre.

1 2


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PIN CONFIGURATION

SYMBOL PIN DESCRIPTION

GND 1, 3, 9, 34, 36 Ground

RXin 2 RXin

Com 43 Com

TXout 35 TXout

VD1 13 Drain voltage supply 1



CLK 22 Clock Input

DIN 21 Data Input

LE 20 Latch Enable Input

VSS 16 Negative supply voltage

AT2 17 Input for external control of additional attenuator

VDN 18 Positive supply voltage

CLR 19 Clear function for register

CS 23 Chip select

T/R 24 T/R switch pulse

VSN 25 Negative supply voltage

STBRX 27 RX Standby control for exterior using

STBTX 28 TX Standby control for exterior using

DOUT 26 Data Output

NC 4, 5, 6, 7, 8, 10, 11, 12, 29, 30, 31,

32, 33, 37, 38, 39, 40, 41, 45, 46, 47, 48

Not Connected

Note: The RF interfacing bond wires or ribbon should be kept as short as possible, The RF lines should be 300um wide or less to minimize discontinuities associated with the connection to the MMIC bond pads.

Caution : This device is a high performance RF component and can be damaged by inappropriate handling. Standard ESD precautions should be followed. OMMIC document “OM-CI-MV/ 001/ PG” contains more information on the precautions to take.


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DEFINITIONS Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. OMMIC makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

DISCLAIMERS Life support applications

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. OMMIC’s customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify OMMIC for any damages resulting from such application. Right to make changes OMMIC reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. OMMIC assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

ORDERING INFORMATION

Generic type Package type Version Sort Type Description

CGY2170YHV Molded QFN C1 6-bit X-band Core Chip

Document History : Version 1.1, Last Update 17/05/2016

Documents

PRELIMINARY DATASHEET · Preliminary Datasheet CGY2170YHV/C1 2 / 13 Website : OMMIC 2, Rue du Moulin – BP. 11 94 453 Limeil-Brévannes – FRANCE Email : [email protected] LIMITING