Modeling the time dependency of the reactive sputter process K. Strijckmans, W.P. Leroy, D. Depla Research Group DRAFT, Dept. of Solid State Sciences, Ghent University, Belgium. DRAFT Ghent University Dept. of Solid State Sciences Krijgslaan 281/S1 B-9000 Gent http://solid.UGent.be Koen Strijckmans +3292644368 [email protected] www.DRAFT.UGent.be AWESOME MEASUREMENT # 2 some stuff you didn't actually measured but want to talk about anyway! Abstract Conclusion! Capabilities of the model Simulation results of a developed non-stationary RSD (Reactive Sputter Deposition) model are presented. The basis principles of the model come from a stationary version which was already applied in earlier work [1], and which was further developed. Both models, the stationary and the non- stationary, include the following poisoning mechanisms: chemisorption, direct and knock-on reactive ion implantation. The models are reinforced with the ability of including a deposition profile on the substrate, a redeposition profile on the target, a non-uniform ion current and an analytical plasma model [2] of the DC discharge. Combined with the SIMTRA package [3] and SRIM [4], this gives us a strong tool to investigate the time evolution and the mechanisms of the target poisoning. Overview of the present options in the RSD model, with the following restrictions: (1) enabling ´´ disables ´Redeposition on target´ (2) enabling ´Plasma model´ disable (3) enforces equal sputter yields for the chemisorbed and the reacted compound When a urrent profile is enabled, the model will adapt a multi-cell description of the target, while a single-cell description for some stuff you didn't actually measured but want to talk about anyway! Current profile Current profile Plasma model Redeposition on target Current profile Uniform current

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Page 1: Print poster Modeling the time dependency v5draftugentbe.webhosting.be/File/PSE2012_Koen_REDUCED.pdf · DRAFT Ghent University Dept. of Solid State Sciences Krijgslaan 281/S1 B-9000

Modeling the time dependency of the reactive sputter process

K. Strijckmans, W.P. Leroy, D. DeplaResearch Group DRAFT, Dept. of Solid State Sciences, Ghent University, Belgium.

DRAFT

Ghent UniversityDept. of Solid State Sciences

Krijgslaan 281/S1B-9000 Gent

http://solid.UGent.be

Koen Strijckmans+3292644368koen.strijckmans@UGent.bewww.DRAFT.UGent.be

AWESOME MEASUREMENT # 2

some stuff you didn't actually measured but want to talk about anyway!

Abstract

Conclusion!

Capabilities of the model

Simulation results of a developed non-stationary RSD (Reactive Sputter Deposition) model are presented. The basis principles of the model come from a stationary version which was already applied in earlier work [1], and which was further developed. Both models, the stationary and the non-stationary, include the following poisoning mechanisms: chemisorption, direct and knock-on reactive ion implantation. The models are reinforced with the ability of including a deposition profile on the substrate, a redeposition profile on the target, a non-uniform ion current and an analytical plasma model [2] of the DC discharge. Combined with the SIMTRA package [3] and SRIM [4], this gives us a strong tool to investigate the time evolution and the mechanisms of the target poisoning.

Overview of the present options in the RSD model,with the following restrictions:(1) enabling ´Current profile´ disables ´Redeposition on target´(2) enabling ´Plasma model´ disable(3) enforces equal sputter yields for the chemisorbed and the reacted compound

When a urrent profile is enabled, the model willadapt a multi-cell description of the target, while a single-cell description for

some stuff you didn't actually measured but want to talk about anyway!

Current profile

Current profilePlasma model

Redepositionon target

Current profile

Uniform current