Proceedings of the 17th International Conference on the

Physics of Semiconductors

About the Cover

The Proceedings cover is based on the ICPS Logo. The central image of the logo is the GoldenGate bridge, which symbolizes San Francisco, where the meeting was held. To represent the semiconductor theme, an electronic charge density contour map of GaAs was used. The addition of the map gives the impression of clouds which often surround the bridge and the California coast. The atoms were positioned on the bridge so that the covale11t bonds holding the crystal together were approximately along the bridge support cables. Alternatively, the bridge support cables could also represent a quantum mechanical wave function. The conference designation was added in bra-ket notation to explicitly represent quantum mechanics and the logo was executed in Red, White and Blue to represent the host country.

The ICPS logo concept was developed by Marvin Cohen and Robert Bachrach and was executed by Margareta Berman Slutzkin and Marianne Friedman of M&M Graphics Design, Oakland, California. The logo first appeared as shown on the cover in a flyer circulated at the Montpellier meeting in 1982 and was used subsequently on various conference publications in only blue and white. The charge density plot was originally published in the Physical Review Letters and later in a Scientific American article on pseudopotentials by M.L. Cohen et al. Both GaAs and Si charge density plots were considered for the background on the logo, but the angular features of the Si charge density were not as pleasing. An additional discussion of the logo is presented in the opening address of Marvin Cohen.

Proceedings of the

17th International Conference on the

Physics of Semiconductors San Francisco, Califomia, USA

August 6-10, 1984

Edited by James D. Chadi . Walter A. Harrison

With 1153 Illustrations

Springer Science+Business Media, LLC

James D. Chadi

Xerox Palo Aho Research Center 3333 Coyote Hili Road Palo Alto. CA 94340 U.S.A.

Walter A . Harrison

Department of Applied Physics w. W. Hansen Laborato ries Stanford Univenity Stanford. CA 94305 U.S .A.

C 1985 Springer Scienee+Business Media New York Originally publishe d by Springer-Verlag New York Ine . in 1985 Softcover reprinl of the hardcover ISI edi li on 1985 All righls reserved. No part of this book may be uanstated Of reproduced in any fenn without wrinen pcrmission from Springer Seienee+Business Media. LLC . 1be use of general descrip ti ve names. trlIdc names, trademarks, ete ., in chis publication, even ifthe forme r are nOl es pecially identified. is not to be taken as a sign chal such names. as undersJood by the Tnde Marks and Merclulndise Marks Act, may acoordingly be use<! freely by anyone.

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ISBN 978-l-4615-7684-6 ISBN 978-l-4615-7682-2 (eBook)DOI 10.1007/978-l-4615-7682-2

PREFACE

The Proceedings of the 17th International Conference on the Physics of Semiconductors are

contained in this volume. A record 1050 scientists from 40 countries participated in the Conference

which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS

Committee and sponsored by the International Union of Pure and Applied Physics and other

professional, government, and industrial organizations listed on the following pages. Papers

representing progress in all aspects of semiconductor physics were presented. Far more abstracts

(765) than could be presented in a five-day meeting were considered by the International Program

Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were

presented at the Conference in either oral or poster sessions. All but a few of the papers were

submitted and have been included in these Proceedings. An interesting shift in subject matter, in

comparison with earlier Conferences, is manifested by the large number of papers on surfaces,

interfaces, and quantum wells.

To facilitate the use of the Proceedings in finding closely related papers among the sometimes

relatively large number of contributions within a main subject area, we chose not to arrange the

papers strictly according to the Conference schedule. We have organized the book, as can be seen

from the Contents, into specific subcategories and subdivisions within each major category. Plenary

and invited papers have been placed together with the appropriate contributed papers. In cases

where a paper would fit into more than one subcategory, we have have put it with other papers most

directly related to it. It is our hope that the extra subdivisions provided in the organization of the

Proceedings will make it more useful and easier to use and will present a clear picture of the field of

the Physics of Semiconductors at the time of the Conference.

The members of the Organizing, Program, and Advisory Committees are listed on the following two

pages. We are grateful to them as well as to all the authors, people, and organizations that helped

make the Conference a success.

September 1984 James D. Chadi Walter A. Harrison

ICPS SPONSORS

International Union of Pure and Applied Physics International Center for Theoretical Physics

American Institute of Physics American Physical Society American Vacuum Society Optical Society of America

ATT Bell Labs Eastman Kodak Company

Energy Conversion Devices Exxon

Ford Motor Company Fund General Electric

Gould, Inc GTE

Hewlett-Packard Co Hughes

IBM Intel Corp

ITT Motorola, Inc

Philips Laboratories RCA Labs

3M Research Varian

Xerox Corp

Army Research Office Air Force Office of Scientific Research

Defense Advanced Research Projects Agency Department of Energy

Office of Naval Research National Aeronautics and Space Administration

National Science Foundation Solar Energy Research Institute

The I CPS Committee gratefully acknowledges the sponsors who have contributed to making the conference a success

Professional

H. Koch G. Vineyard J, Arthur E. Tosatti J. Quinn

Government

G. Witt R. Griffith R. Reynolds T. Kitchen G. Wright H. Mark A. DeGraaf E. Sabisky

Industrial

K. Patel R. Van Heyningen S. Ovshinsky M. Cohen W. Compton R. Hall A. Bennett P. Rill F. Schwettmann R. Baron S. Keller R. Pashley C. Kao C. Lund R. Bhargava G. Schnable R. Smith R. Bell H. Hall

SPONSORS ADVISORY COMMITTEE

AlP APS AVS ICTP OSA

AFOSR ARO DARPA DOE ONR NASA NSF SEAl

ATT Bell Labs Eastman Kodak ECD Exxon Ford Motor Co General Electric Gould, Inc GTE Hewlett· Packard Hughes IBM Intel Corp ITT Motorola, Inc Philips Labs RCA Labs 3M Research Varian Xerox

IUPAP Commision

M. Cardona R. Enderlein A. Frova H. Grimmeiss D. Hamann C. Hilsum H. Kamimura H. Potzl J, Ripper I. Solomon R. Stradling V. Vavilov

FRG GDR Italy Sweden USA UK Japan Austria Brazil France UK USSR

ICPS COMMITTEE

Chairman Secretary Treasurer Coordinator Program Proceedings

Satellites Arrangements

Operations Publications Members

MARVIN L. COHEN, UC Berkeley ROBERT Z. BACHRACH, Xerox, Stanford U ROBERT S. BAUER, Xerox PARC SUSAN MARSH LU J. SHAM, UC San Diego JAMES D. CHAD!, Xerox, PARC WALTER A. HARRISON, Stanford U SOKRATES T. PANTELIDES, IBM Yorktown PETER Y. YU, UC Berkeley ROBERT J. NEMANICH, Xerox PARC MICHAEL H. HECHT, Jet Propulsion Lab STEVEN G. LOUIE, UC Berkeley ARTHUR I. BIENENSTOCK, StanforCI U LEO M. FALICOV, UC Berkeley THEODORE H. GEBALLE, Stanford U FRANK HERMAN, IBM San Jose VENKY NARAYANAMURTI, ATT Bell Labs WILLIAM E. SPICER, Stanford U

ICPS EXHIBIT

Manager RICHARD DALVEN, UC Berkeley

INTERNATIONAL PROGRAM COMMITTEE

Lu J. Sham,

D. Aspnes, USA A. Baldereschi, ITALY F. Bassani, ITALY

Chairman L. Keldysh, USSR M. Klein, USA

C. Benoit a Ia Guillaume, FRANCE M. Cardona, FRG

T. Masumi, JAPAN Y. Petroff, FRANCE P. Stiles, USA

J. Chelikowsky, USA P. Dean,* UK C. Goncalves da Silva, BRAZIL M. Grynberg, POLAND

T. Stradling, UK R. Street, USA Y. Toyozawa, JAPAN J. Warlock, USA

ADVISORY COMMITTEES

United States J. Bardeen IL E. Burstein PA M. Dresselhaus MA L. Esaki NY H. Fritzsche IL J. Phillips NJ F. Stern NY

• deceased

International M. Balkanski R. Barrie G. Harbeke K. Huang H. Kawamura 0. Madelung A. Many B. Pistoulet H. Queisser L. Sosnowski J. Stuke V. Tuchkevich Y. Uemura B. Velicky F. Yndurain

France Canada Switz China Japan FRG Israel France FRG Poland FRG USSR Japan Czech Spain

OPENING SESSION

Robert Z. Bachrach Xerox Palo Alto Research Center

3333 Coyote Hill Rd., Palo Alto, California 94304

Colleagues and Guests,

As secretary of the Organizing Committee, and on behalf of the Committee, I hereby declare the

opening of the 17th International Conference on the Physics of Semiconductors. I welcome you to

the conference which the committee has prepared. I am pleased and I must say relieved that you

have all come.

I want to thank all those who have contributed to preparing the conference and to acknowledge our

sponsors whose support has made our preparations possible. The sponsors have provided over half

the funds required for the preparation and execution of this conference. The other half has come

from the registration fees and from the Exhibit which opens on Tuesday morning.

Among the sponsors listed in the Program and Abstract books, the International Union of Pure and

Applied Physics has a special relationship to the conference since the IUPAP Semiconductor

Commission selects the sites for the conferences and oversees their preparation and conduct.

On behalf of the committee, I am pleased to introduce Prof. Robert Hofstadter of Stanford University

who is chairman of the IUPAP US National Committee. Prof. Hofstadter is probably best known to

you for his work on electron scattering by atomic nuclei and for his discoveries concerning the

structure of nucleons for which he received a Nobel Prize. Prof. Hofstadter will welcome you on

behalf of IUPAP. [The transcript of Prof. Hofstadter's remarks are in a following paper.]

It is my pleasure to introduce Cyril Hilsum, who is known to all of you. He is going to welcome you

on behalf of the IUPAP Semiconductor Commission, of which he has been chairman for the last six

years. [The transcript of Dr. Cyril Hilsum's remarks are in a following paper.)

Before we begin the technical work of the conference embodied in the invited and contributed

program, the committee would like to spend a few minutes reflecting upon this conference and the

field of physics it represents. We regret that Sir Nevill Mott has not been able to attend and

particpate in this reflection. This would have been particularly appropriate since his career has

spanned the modern development of the field and he has over the years actively participated in

these conferences starting with the first in Reading, England in 1950, as well as having been

Chairman for the Edinburgh Conference in 1978.

We thought it would be valuable to reflect upon the work we are about to undertake in two different

ways. I will make some general remarks relating to this conference series and Marvin Cohen, the

conference chairman, in addition to his other remarks, will specifically address aspects of

semiconductor physics. Our objective is to provide some perspective on the week's events.

The primary function of the International Conference on the Physics of Semiconductors is to provide

xii Robert Z. Bachrach

an opportunity for the disclosure of recent works in the field of semiconductor physics on a biennial

schedule. The conference includes a program spanning all the active frontiers of semiconductor

physics and therefore provides a forum where members of the field and others can in one place get

a view of what are those frontiers. Among conferences, the ICPS series, which began 34 years ago

shortly after the birth of the transistor, has achieved a special role. The International Conference on

the Physics of Semiconductors is both a benchmark for the field and the harbinger of change in the

field.

The ICPS series has chronicled through its proceedings the development of the field of

semiconductor physics and the evolution of the depth of understanding in this branch of physics.

One finds in examining the proceedings of past conferences, how rapidly the shift of focus can

occur. As new understanding is achieved, one finds a continual change in focus of the conference.

Perhaps that embodies one of the principal functions of conferences such as these by providing a

working target to the members of the field.

If one looks back to the early conferences, one gets an example, because one finds that even the

title of the conference was different in 1956, being called: "Semiconductors and Phosphors." I have

to admit that I did not attend the Garmisch meeting in 1956, although I was at the time active in the

field of ZnS phosphors and electroluminescent panels, albeit at home in my basement. What one

finds is that this conference came at the crossroads where a unified understanding was evolving that

phosphors were a special class of semiconductors with efficient recombination. This process was

not complete until the discovery and understanding of pair recombination in indirect semiconductors

and the different forms of charge injection over the ensuing 10 years. The evolution of this

understanding led to the development of the splid state laser which was the highlight of the 1964

conference in Paris. One should note, however, that it was only two months after the 1962 Exeter

Conference that three groups independently achieved the goal of a solid state laser. One of the

groups was headed by Marshall Nathan, who in 1970 became secretary of the last ICPS conference

held in the United States in Cambridge, Massachusetts. One might also note the twenty year time

span from the initial discoveries in the early sixties to the general semiconductor laser manufacturing

technology that is evolving today.

This bit of history is an example of the many facets of the scientific process by which we achieve an

understanding of the physical world. At the working level, science is both competitive and an

adversary proceeding. Conferences such as this one play the important role in the process whereby

one's individual ideas and efforts get evaluated in an open forum by one's peers. At the working

level, science is full of emotion not too different from that in sports competition, except here the

prize is new discoveries and new understanding. Thus, while the athletes compete in Los Angeles

for Olympic gold, we are completing a different form of competition. Those of you who are

presenting works here this week are only one third of those who entered the competition for invited

and contributed papers.

Now, the analogue to cheering at our event is asking questions. We have left ample time in the

schedule for discussion, and we challenge you to use the opportunity. Such free and open

discussion is an important component of the scientific process.

Science and physics are two words which are so ingrained in us that we often forget what they

Opening Session xiii

embody. One can recover from this somewhat by invoking the English equivalent of the Latin and

Greek from which they are derived. Science is knowledge gained through practice and study; while

the root physi- is synonymous with nature and physics evolved from what classically was called

natural science. Thus one could equally well call this scientific meeting the 17th International

Conference on the Nature of Semiconductors. I think some of these clarifications are useful,

because the work we pursue is a subset of man's overall quest to better understand the physical

world of which he is part and the concurrent technological application of the knowledge developed.

Semiconductors comprise an important class of materials whose technological development in the

last 40 years has had an enormous impact upon the evolution of civilization. The further

development of our understanding of semiconductors will drive this revolution even further in the

areas of controls, computers, and communications.

Although the fundamental laws of nature as emodied in our understanding of quantum mechanics

and electrodynamics are well established, how these laws can be used to describe complex systems

is still evolving. Much remains to be discovered and, as Pierre Aigrain emphasized in his opening

address at the Montpellier meeting, additional research usually leads to new and often unexpected

insights. One should note that what becomes exhausted in most fields is individual intellects, not

the field itself.

Certainly this week we will explore new areas which even ten years ago were barely represented at

the conference. At the Stuttgart meeting in 1974, for example, only one paper was presented on

supertlattices. Superlattices, quantum wells, and related phenomena have grown at this conference

into one of the dominant areas represented in the program, and certainly one of the areas from

which unexpected developments will spring in the years ahead. Certainly at the end of this meeting,

we will all conclude that the field of semiconductor physics is alive with prospects and opportunities

for exciting work.

Conferences such as the ICPS are also important in that they provide points of departure, a point in

time where individual scientists often determine new directions. Thus it is unfortunate that for many,

attendance is often tied to presenting a paper. At conferences such as the ICPS, individual

scientists often decide both to seize a perceived opportunity and to start a new line of research.

Thus if at the conclusion of this conference some of you go home with new insight into the research

you want to be pursuing and presenting at the next conference, our efforts will have been

particularly rewarded. I and the committee hope you will find the conference we have prepared

stimulating, and if as the week evolves, you in fact discover a new direction for your research from

the work presented here, then our efforts will have been successful.

I now call upon the conference chairman, Prof. Marvin Cohen. [The remarks of Prof. Marvin Cohen

are in a following paper.]

ICPS OPENING ADDRESS

Robert Hofstadter Stanford University

Stanford, California 94305

I am here as a representative of the International Union of Pure and Applied Physics, sometimes

referred to as IUPAP, and I am happy to welcome you to this International Conference on the

Physics of Semiconductors.

Let me make a personal remark here. I've been in physics a long time and after I was into the

subject for a period of 5 or 10 years, I probably knew 5 to 10% of all the physicists in the United

States. At a conference of this sort, I would know a great many people, 10% up to maybe 25%.

Times have changed, though, and the number of people at this meeting is probably half as great as

the total number of people in the American Physical Society when I started out, and please note this

is a specialized branch of physics. This meeting, as I see you all assembled here, is as big or

bigger than the meetings of elementary particle physicists, which I usually attend these days.

I am here today as the current Chairman of the United States National Committee, which is

sometimes called the Liaison Committee, for the International Union of Pure and Applied Physics.

This Union has often been referred to by its initials, IUPAP, and has been in existence since 1922.

The Union also belongs to the International Council of Scientific Unions, which is also known by its

initials, ICSU. Because these international agencies in science present a rather complicated picture

to physicists, I will take a moment to tell you a little about IUPAP, and about the Liaison Committee's

goals and functions. It is a confusing matter and I think I am still confused by all these agencies.

From the Statutes of the IUPAP Union, the aims are as follows:

"a) to stimulate and promote international cooperation in physics

b) to sponsor suitable international meetings, and to assist organizing committees

c) to foster the preparation and the publication of papers and tables of physical constants

d) to promote international agreements on the use of symbols, units, nomenclature, and

standards

e) to foster free circulation of scientists

f) to encourage research and education."

I hope that everyone here will agree that international cooperation in physics and the free circulation

of scientists, which are two of the aims I quoted, have much more than their ordinary significance

because of the dangerous time in which we live. There are few areas of greater utility in promoting

good relationships between societies foreign to each other than those sponsored by IUPAP and its

goals which I have described. Indeed this international conference supplies a good example of the

aims of worldwide peaceful cooperation.

xvi Robert Hofstadter

The special function of the Liaison Committee, of which I happen to be Chairman, is "to maintain

liaison between their respective communities and the Union. The Liaison Committees will, within

their respective communities, encourage and promote the aims of the Union. Each committee may

submit to the Union questions within the competence of the Union. The Committees designate their

delegates to the General Assemblies of the Union and a Delegation Head to vote on questions of

administration as laid down in Articles 14 and 16."

There will be a General Assembly in Trieste, Italy in early October of this year and I expect to attend

it, along with other members of the U.S. delegation. I shall be glad to consider and carry concerns

of attending physicists of this conference to the General Assembly, if you have any such concerns.

This conference is receiving support from IUPAP and I feel personally very happy about that. The

semiconductor field has contributed an enormous amount to global communications and the

transmission of vital information and education to all parts of the world. The pratical achievements

of this discipline represent the clearest path I know of to spread truth, news, information and

education to parts of the world where it is most needed and for this I commend the physicists

present for providing the basic knowledge that allows applications to be made furthering those

processes of communications.

I am also happy that I have been involved in the past in parts of physics closely related to yours,

because I have done research in the 40's and 50's in the fields of luminescence and scintillation

counting as well as in the branch of detection of elementary particles by means of crystal

conduction counters. In that work, I was lucky enough to discover the Nai(TI) scintillation counter

and its uses in X- and gamma-ray spectroscopy. At the present time, I am studying the motion of

holes and electrons in thallium halides in an effort to make a better detector of high energy particles.

I feel rather close to your own field, and for this reason as well as more obvious ones, I want to wish

you great success in your conference and in your deliberations.

I also would like to invite you to visit the campus of Stanford University, where I belong, and where

there will be a great new effort in semiconductor physics that will proceed from the recently formed

Center for Integrated Systems.

ICPS OPENING ADDRESS

Cyril Hilsum GEC Research Laboratories

East Wembley Wembley, Middlesex HA9 7PP ENGLAND

Good morning Mr. Chairman, ladies and gentlemen. Some of you may be surprised at seeing me up

here because. my name is not on the list of speakers. You're not half as surprised as I am. On

behalf of the Semiconductor Commission, I'd like to welcome you to San Francisco. I'd also like to

adopt another hat - that of the foreigner here - a stranger in the u.s.

This Conference has a considerable tradition. It moves peripatetically from country to country every

two years. t sometimes feet that its main purpose is that the older scientists among us can actually

meet and compare our appearance and notice how we seem to age white our wives get younger. At

least that is how t see it.

The last U.S. conference was in Cambridge in 1970 and that is a tong time ago. Many countries bid

for the conference and I'm sure we all feel our return has been delayed because of that. It is

obvious from the arrangements, both scientific and social, that the U.S. has been saving their

energies and they are now released in an explosive burst.

The problem we have is one of choice. There are so many goodies and already we can congratulate

our host, not just on the breadth of the program, but also on the imagination that has gone into it. t

think we can see that we are involved in an epic into which much thought has gone.

I can give you a story about the box lunch, for example, where I am told every individual member of

the committee has selected one item for the box lunch. So you can actually blame a person if you

don't like it and I'm sure that Bob Nemanich will be glad to give you the names of each person

responsible for each item.

Imagination, of course, starts with the program this morning, but also this evening. I've never been

to the Exploratorium, but I am told there is a room in which you can go where the only sense with

which you can explore is one of touch. The imagination boggles.

Attendance here is now approximately 1,1 00. Bob Bachrach was a bit worried about a month ago

when he discovered that only 500 had registered by the closing date. I pointed out to him that we

have a strange society here among the semiconductor physicists. They never do anything until after

the closing date. So, attendance now is a record. There are over 1 ,000 of you and it is obvious that

considerable planning had to go into providing a room into which you could all sit comfortably.

The attendance speaks for the vitality of the field as well as for the organization. I would like to

remind you that there were six satellite conferences which had to be organized in addition to several

others which chose to associate. I do not think anybody can go to all six and the main conference.

But, semiconductor physicists are imaginative and I'm sure that somebody will pop out at the end of

the time and say that he has actually attended all six. In fact, I think that I probably have the record

for attending the smallest fraction of any satellite conference, when I went to one paper in the VLSI

xviii Cyril Hilsum

Conference. It wasn't intentional, but its just that Bob Bachrach threw me into the hall and

registered me for the conference as soon as I arrived and then took me out again after one paper.

Well, I don't want to keep you for very long. I just want to say welcome to San Francisco. Welcome

to the International Conference on the Physics of Semiconductors. I'm sure this Conference will be

as exciting as any of those that have gone before and I'm sure you all look forward to the official

beginning.

Thank you very much.

OPENING ADDRESS

Marvin L. Cohen

Department of Physics, University of California, and

Materials and Molecular Research Division, Lawrence Berkeley Laboratory

Berkeley, California 94720

Ladies and Gentlemen:

On behalf of the Organizing Committee, I am happy to welcome you to the 17th International Conference on the Physics of Semiconductors.

Let me begin by expressing my gratitude to all of you who have contributed to this conference. The planning began four years ago when 1984 brought forth an image of Orwell and a date very far into the future. We were enthusiastic but a bit apprehensive then. Fortunately, most of Orwell's fears did not come to pass, and I hope the same will be true of ours.

The San Francisco ICPS exists because of Bob Bachrach. Obviously, he could not have done it alone, but I'm not sure. He guided every aspect. The ICPS Comittee did an enormous amount of work efficiently and effectively. Lu Sham's international program committee dealt with the difficult task of limiting the number of contributions accepted. Many of us felt that a wonderful second conference could have been conducted using just the rejected papers. The national and international advisory committee made many valuable suggestions, and the IUPAP Semiconductor Commission acted in a supportive and helpful fashion which we appreciated greatly. We were blessed with generous professional, government, and industrial sponsors who gave valuable advice and support. Most importantly, you, the participants, made this conference possible with your research contributions. Your papers report many exciting new developments, and we are all looking forward to the presentations this week.

I've been asked to give a non-technical explanation of our logo (see cover). The logo consists of the San Francisco Golden Gate Bridge superimposed on a computer drawn plot of contour lines representing the density of electrons in the semiconductor gallium arsenide. The gallium and arsenic atoms are located at the center of the bridge and on top of the towers respectively. The white lines are contour map lines similar to those used to illustrate the heights of mountains. Here they tell where electrons concentrate in the crystal. Electrons pile up between the atoms and form a chemical bond holding the crystal together. These bonds lie near the cables which hold the bridge up. Some interpret the electron lines in the logo as clouds or fog near the bridge while others have called them ocean waves. The bridge and the red, white, and blue coloring symbolize San Francisco and the United States. Gallium arsenide is the semiconductor, and the Dirac bra-ket, <17thi1CPSI1984>, notation represents quantum mechanics which is basic to the study of semiconductors and was used to compute the electron density maps.

To orient our new participants at the conference, I have listed the dates and locales of previous conferences in Table 1.

XX Marvin L. Cohen

TABLE 1

Dates and locales of the I CPS

1950 Reading IX 1968 Moscow

II 1954 Amsterdam X 1970 Cambridge

Ill 1956 Garmisch XI 1972 Warsaw

IV 1958 Rochester XII 197 4 Stuttgart

v 1960 Prague XIII 1976 Rome

VI 1962 Exeter XIV 1978 Edinburgh

VII 1964 Paris XV 1980 Kyoto

VIII 1966 Kyoto XVI 1982 Montpellier

XVII 1984 San Francisco

Many of us recall portions of this list more vividly than our own birthdays and wedding anniversaries.

This series has been important to the development of semiconductor physics, and the ICPS has

been considered one of the preeminent disciplinary conferences for over 30 years. The proceedings

of these conferences chronicle the developments during this exciting period, and they tell a

fascinating story of one of the most active fields of science. I believe that the contibutions this week

will continue in this fine tradition.

As Minke Balkanski said at our last meeting, one of the rewards of participating in the opening and

closing sessions is the obligation to read what was said in previous sessions of this kind. The

remarks range from the frivolous to the scholarly. A good example of the latter is Yasutada

Uemura's division of activity in semiconductor physics into three eras: The dawn of modern

semiconductor physics; extensions and sophistication; and then transformations. These eras are

roughly associated with the 50's, 60's, and 70's. I look forward to his remarks six years from now

about the 1980's.

By far the most popular themes in the opening and closing sessions are the health of the field, a

description of the current conference, and a synopsis of some of the work presented. The latter will

be dealt with in the closing session so I will limit my comments now to the first two.

The discussions of the state of the field give the impression that we are preoccupied with the

possible death of semiconductor physics. I'd like to take a few minutes to mention a few examples

and then give my own assessment. At Warsaw in 1972, John Hopfield seemed relieved that the

prediction of the demise of the field in 10 years which he associated with Nevill Matt's lecture in

Exeter in 1962 did not come to pass. But he was still uneasy because he considered the field to be

mature, and he cautioned that "the usual precursor of death is maturity." He continued, "There was

a time when the constructs of high energy physics could be of direct interest in translation (to

semiconductors)" and mentioned the analogy between the exciton and positronium. He added,

"This era ended perhaps fifteen years ago and to see why it has ended one needs only look at the

sophistication which semiconductor physics achieved."

Opening Address xxi

Pierre Aigrain had earlier discussed sophistication in 1964 when he related the field to Marilyn

Monroe's movies which he said at first were unsophisticated and exciting because they were

unsophisticated, and later sophisticated but not necessarily less interesting. Despite the cautious

tone of this statement, I have the feeling that Aigrain was reasonably optimistic in Paris in 1964 and

even more optimistic 18 years later in Montpellier. I'll mention one more case. In 1962, Roger Elliot

stated, "Five or ten years ago, in the 'heroic days' of our subject, the majority of advances in solid

state physics were being made in semiconductors." He went on to say that at that time the

emphasis had changed to magnetic crystals and metals.

I am probably guilty of quoting out of context and using statements, designed to describe a specific

time period, beyond their intended domain. My punishment will come later when I will be the victim

of this same crime. I also mainly quote theorists who were on the whole somewhat less optimistic

than the experimentalists, which may say something of the relative predicting power of these two

groups. With this statement serving as a caveat, let me say that in my opinion these are also "heroic

days." The field of semiconductor phyics is thriving, and at this point, the outlook for the future is

very bright. Again, semiconductors are playing a central role in a majority of the advances in solid

state physics. The intellectual challenges are attracting the best scientists doing basic and applied

research.

The ingenuity of the researchers in this area has been very impressive. For example, in 1962 Mott

boasted that "a complete band structure could be worked out on an IBM 7090 machine in 12

minutes!" How could he have guessed that in 1984 with computers that are hundreds of times faster

it would take hours.

On the theoretical side, not only are we using the constructs of high energy phyics, the reverse has

also been true. Many new techniques and concepts are common to both fields. We will hear papers

this week describing semiconductor properties using gauge theories, renormalization group

techniques, field theories, broken symmetry, scaling, fractional statistics, etc. There are now experts

in particle physics, statistical physics, field theory, and pure mathematics who are joining forces with

condensed matter theorists to explore semiconductor behavior. In addition, the connections are

much more profound that the exciton·positronium example, and the flow of new ideas goes both

ways.

Another dramatic change in theoretical research has been the development of schemes to explore

properties of real materials. Earlier work focused on simpler, idealized models. Now it is possible to

predict or explain some semiconductor properties knowing only information about the constituent

atoms. These theoretical approaches are just being explored, but they have already enhanced the

interaction between theorists and experimentalists and between solid state physics and chemistry.

The developments in experimental physics associated with semiconductors have been extraordinary.

New techniques have led to exciting discoveries. Experimentalists are using the lowest

temperatures, the largest magnetic fields, the shortest light pulses, and the highest pressures. They

have made semiconductors which are the purest solids known at normal temperatures. These

materials are surpassed in purity only by helium. They have also disordered and doped these

systems so that they are among the dirtiest known.

xxii Marvin L. Cohen

The variation in properties is a major attraction of semiconductor physics for experimentalists. The

systems can be changed by alloying, doping, temperature, pressure, and electromagnetic fields.

Semiconductors can act as metals, semimetals, and also be insulating. Gaps can be large, small,

rigorously zero, and even negative. These systems can be ideally periodic or amorphous. They can

also be one-dimensional, two- or three-dimensional, and according to some researchers here even of

higher dimension. Semiconductors can be superconducting or magnetic, and they even seem to

contain charges of one-third which may not be doomed to permanent confinement. Hence, it is no

wonder that talented experimentalists have chosen this field in which to work.

One of the most rewarding aspects of semiconductor research is the close collaboration between

theory and experiment. I doubt that this is matched in any other subfield of physics. As an example,

in the 1960's and 70's, it was a close international collaboration of a sizable number of theorists and

experimentalists who unraveled the main electronic structure of most of the semiconductors we

study now. Both subgroups were not able to solve the problems alone. This collaboration rivals any

in physics of which I am aware.

I expressed the worry at Kyoto in 1980 that the then newly developed ab initio techniques might

result in decreased interaction between theorists and experimentalists, but this did not come to pass.

As I mentioned before, the interactions are even stronger now. Our strength lies in the fact that

semiconductor theorists are usually held responsible for their predictions after a relatively short

period of time, and experimentalists are burdened with the responsibility of explaining their results in

detail alone or, as is often the case, in collaboration with a theorist who has never seen the

apparatus or a semiconductor of any kind. And, of course, most of what we do can be applied. I

therefore have no hesitation in inviting young researchers and students to join us.

I would now like to make a few remarks related to this meeting of the ICPS. We encourage you to

interact in the sessions, in the corridors, and at the social functions. I'll again quote Aigrain who

was disappointed 20 years ago because there were no fist fights at that meeting. Please discuss,

disagree, and argue. But try to do it during the time alloted. Because we have so many interesting

papers to discuss, it will be necessary to keep to a rigid time schedule. Please use your

semiconductor watches and try to keep on schedule.

Another matter of this kind which, unfortunately, appears in the closing addresses of some of the

previous conferences, was once expressed as: "How can so many bright physicists be so dumb

about the size of characters which must be on a slide in order for it to be legible at the back of the

room?" I think it may be less dumb to state this in the opening session--so I am, and those of you

who are worried, please see the appropriate people here for help.

Finally, I want to thank you for giving us the honor of hosting the ICPS. In Montpellier, I promised

you bridges of gold and valleys of silicon. In that same vein, I now wish you social events which are

memorable, a stimulating conference, and perhaps a few not-too-violent fights--for Aigrain's sake.

Preface !CPS Sponsors

Opening Session ROBERT Z. BACHRACH

ICPS Opening Addresses ROBERT HOFSTADTER CYRIL HILSUM MARVIN L. COHEN

I. SURFACES

A. Scanning Tunneling Microscopy

CONTENTS

v vii

xi

XV

xvii xix

1 Scanning Tunneling Microscopy (Plenary). G. BINNIG and H. ROHRER 3 2 Theory of Voltage-Dependent Scanning-Tunneling Microscopy of a Crystal Surface: Graphite. A. SELLON!,

P. CARNEVALI, E. TOSATTI and C.D. CHEN 11

B. Si and Ge(lll) Surfaces

1 Angle Resolved Photoemission Studies of Reconstructed Silicon Surfaces (Invited). R.I. G. UHRBERG 15 2 Polarization Dependent Ge and Si(lll) 2 X I Surface State Optical Absorption: A Test of Surface

Reconstruction Models (Invited). M.A. OLMSTEAD and N.M. AMER 21 3 High Resolution Ion Scattering Analysis of Semiconductor Surfaces and Interfaces (Invited). R.M. TROMP 27 4 Atomic Structures and Electronic Properties of Ge(lll) Cleaved Surfaces at Low Temperatures (Invited).

V.A. GRAZHULIS 33 5 Inverse Photoemission at Semiconductor Surfaces. F.J. HIMPSEL, D. STRAUB and TH. FAUSTER 39 6 Theoretical Study of Stacking Faults in Silicon. M.Y. CHOU, S.G. LoUIE and M.L. CoHEN 43 7 Electron-Phonon and Correlation Effects at Silicon Surfaces. F. FLORES, C. TEJEDOR and E. LoUis 47

C. Si and Ge (100) Surfaces

I A Total Energy-Renormalization Group Approach to the Phase Transition of Solid Surfaces. J. IHM, D.H. LEE, J.D. JOANNOPOULOS and J.J. XIONG 51

2 Reconstruction of the Si(I00)-2 x I Surface. K.C. PANDEY 55 3 The Atomic Geometry of Si(I00)-(2 x 1) Revisited. C. B. DuKE, A. PATON and B.W. HoLLAND 59 4 Electronic Excitations on Semiconductor (100) Surfaces. H.H. FARREL, J.Q. BROUGHTON, J.A. SCHAEFER

and J.C. BEAN 63

D. Ill-Y Semiconductor Surfaces

1 The Electronic Structure of Polar GaAs Surfaces (Invited). R.D. BRINGANS and R.Z. BACHRACH 67 2 Low-Energy Electron Diffraction Study of the (2 x 2) GaAs(lll) Surface. G. Xu, Y. HuANG, W.N. MEI,

B.W. LEE and S.Y. TONG 73 3 Reconstructions of the GaAs(lOO) Surface: Core-Level Photoemission Study. A.D. KATNANI, H.W. SANG, JR.

and R.S. BAUER 77 4 Atomic Geometry and Dynamics of the lnAs(llO) Surface. L. SMIT and J.F. VANDERVEEN 81 5 On the Temperature Coefficient of the Ionization Energy in Ill-Y Compound Semiconductors. W. MoNCH and

L. KOENDERS 85

E. Chemisorption at Surfaces

(i) Elemental Semiconductors

Surface Structure of Semiconductors from Extended X-Ray Absorption Fine Structure (Invited). J.E. RowE and P.H. CITRIN 89

2 Theory of the Si(lll)V3 x V3-Al Surface. J.E. NoRTHRUP 95 3 Investigation of the Si(lll) Surface in UHV: Oxidation and the Effect of Surface Phosphorus. H.W.K. ToM,

X.D. ZHU, Y.R. SHEN and G.A. SOMORJAI 99

xxiv Contents

4 Adsorption of Alkali Metals on Si(l11) Surface. R. Ave!, O.B. DABBOUSI and M.S. JAZZAR

5 Surface Vibrational Studies of Chemisorption on Silicon. M.K. KELLY, G. MARGARITONDO,

M.N. Pl:ANCASTELLI, J. ANDERSON, D.J. FRANKEL and G.J. LAPEYRE

6 Surface Electronic Structure Change by Cs Adsorption on Si(l11) 2 x I. H. TocHIHARA, M. KuBOTA,

M. MiYAO andY. MURATA

7 The Thermal Desorption Spectra Study of Hydrogen Chemisorption on Si(IOO) Clean Surface. X. JIN,

Y. FENG, C. ZHUANG and X. WANG

8 Chemisorptions of Ag, Cu and Au on Si(l11) and Ge(l11) Surfaces. J. CHE, K. ZHANG and X. XIE

(ii) Compound Semiconductors

103

109

113

117 121

I Hydrogen Adsorption on a-Sn and lnSb Studied by LEELS. I. HERNANDEZ-CALDER6N 125

2 Growth and Characterization of Sb Overlayers on lnP(IIO). K. LI, C.R. BONAPACE and A. KAHN 129

3 GaAs(l!O) + Sb-p(l xI): A Case Study of Adatom Adsorption on Compound Semiconductor Surfaces.

J.R. MYRON, J. ANDERSON and G.J. LAPEYRE 133

4 Laser-Induced Chemical Reactions at the Al-111-V Semiconductor Interface. H.W. RICHTER and

L.J. BRILLSON 137

II. INTERFACES

A. Metal Semiconductor Interfaces

(i) Interface Formation and Structure

Initial Steps of Metal-Silicon Interface Formation (Invited). C.A. SEBENNE 143

2 Progress of Synchrotron Radiation Spectroscopy for the Study of Condensed Interfaces: New Methods and

Some Results (Invited). G. Rossi 149

3 Thin Film Kinetics and Reactions at Metal-Silicon Interfaces. R.J. NEMANICH, B.L. STAFFORD, J.R. ABELSON

and T.W. SIGMON 155 4 Pb/Ge(lll): Formation of the Interface under Thermodynamic Equilibrium. G. LE LAY and Z. IMAM 159

5 Ionic Contribution to Silicon-Metal Bonding: Si(11l)-Ca Interface Reactions. A. FRANC!OSI and

J.H. WEAVER 163

6 Resonant Photoemission as a Local Probe for Interface-An Application to Al-GaAs(110). K.L.K. KOBAYASHI,

N. WATANABE, H. NAKASHIMA, M. KUBOTA, H. DAIMON andY. MURATA 167 7 Dislocation Mediated Melting of Silicon-Metal Interfaces. B.K. CHAKRAVERTY 171

(ii) Schottky Barriers

Schottky Barriers in Compound Semiconductors (Invited). R.H. WILLIAMS 175

2 Schottky Barrier Formation at Metal-Hydrogenated Amorphous Silicon Interfaces. J. KANICKI, M. OsAMA

ABOELFOTOH and W. BAUHOFER 183 3 Theory of Schottky Barriers for ill-Y and Group-IV Semiconductors. O.F. SANKEY, R.E. ALLEN and J.D.

Dow 189 4 Unified View of Schottky Barrier Formation. J. TERSOFF 193

5 Longitudinal and Transverse Electrical Transport in the Crystalline Thin Film Systems CoSi,ISi and NiSi,ISi. J.C. HENSEL, R.T. TUNG, J.M. POATE and F.C. UNTERWALD 197

6 Photoelectron Spectroscopy of the Si/Eu Interface Using Synchrotron Radiation. J. NOGAMI, C. CARBONE,

J.J. YEH, I LINDAU and S. NANNARONE 201 7 Surface Barrier Formation on (110) GaAs Studied with Raman Spectroscopy. F. ScHAFFLER, H. BRUGGER and

G. ABSTREITER 205

B. Semiconductor-Semiconductor and Insulator-Semiconductor Interface

l High Resolution Electron Energy Loss Spectra from Surfaces and Interfaces of Semiconductor Oxides. J.P. VIGNERON, A.A. LUCAS, P.A. THIRY, M. LIEHR, J.J. PiREAUX and R. CAUDANO 209

2 Electronic Structure of Interfaces between Crystalline and Amorphous Tetrahedrally-Coordinated

Semiconductors. PH. LAMBIN and F. HERMAN 213 3 New Results on the SiO,ISi Interface. M.H. HECHT, P.J. GRUNTHANER and F.J. GRUNTHANER 217

4 Observing One Interface Trap: Lattice Versus Electron Temperature. L.D. JACKEL, W.J. SKOCPOL, R.E. HOWARD, L.A. FETTER, R.W. EPWORTH and D.M. TENNANT 221

5 Novel Polyphosphide Semiconductors with Good Interfacial Properties to lnP. R. ScHACHTER, D.J. OLEGO, J.A. BAUMANN, C.G. MiCHEL, M.A. KUCK, L.G. POLGAR, P.M. RACCAH and W.E. SPICER 225

Contents xxv

6 Si-Si02 Interface Structure on (100), (110), and (ll1) Surfaces. T. HATTORI, M. MuTO and T. SUZUKI 229 7 Microscopic Study of the GaP-Si Interface. P. PERFETTI, F. SETTE, C. QUARESIMA, C. CAPASSO, A. SAVOIA,

F. PATELLA and G. MARGARITONDO 233 8 Na+ -Induced Surface States at the Si-Si02 Interface. E. ROSENCHER and R. CoPPARD 239 9 Determination of the Electronic Structure of Si Dangling Bonds at the Si!Si02 Interface. D.V. LANG and

M.C. CHEN 241

III. QUANTUM WELLS

A. Quantum Hall Effect

1 Quantum Hall Effect: Fractional Quantization (Plenary). D.C. TsUI 247 2 Quasiparticle Aggregation in the Fractional Quantum Hall Effect (Plenary). R.B. LAUGHLIN 255 3 Breakdown of the Integral Quantum Hall Effect. H.L. STt>RMER, A.M. CHANG, D.C. TsUI and

J.C.M. HWANG 267 4 Energy Dissipation Processes in the Quantum Hall Regime. K. VON KLITZING, G. EBERT, N. KLEINMICHEL,

H. 0BLOH, G. DoRDA and G. WEIMANN 271 5 Quantum Hall Effect Experiments on a Sub-microsecond Time Scale. F. KucHAR, R. MEISELS, G. WEIMANN

and H. BURKHARD 275 6 Length Scales and the Quantised Hall Effect. A.P. LoNG, H.W. MYRON and M. PEPPER 279 7 Temperature Dependence of 'hand 2/3 Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures.

J. WAKABAYASHI, S. KAWAJI, J. YOSHINO and H. SAKAKI 283 8 Fractional Quantized Hall Effect of 2D-Electron System in Si MOS-Structures. M.G. GAVRILOV, I.V.

KuKUSHKIN, Z.D. KvoN and V.B. T!MOFEEV 287 9 Cyclotron Resonance in the Fractionally Quantized 2D Electron Gas. Z. ScHLESINGER, S.J. ALLEN,

J.C.M. HWANG and H. LE 291 10 Fractional Quantum Hall Effect in MOCVD-Grown GaAs/ AlGaAs Heterostructures at Pulsed High Magnetic

Fields. R.E. HORSTMAN, E.J. VAN DEN BROEK, J. WOLTER, A.P.J. VAN DEURSEN and J.P. ANDRll 295

11 Fractional Hall Quantization of Two-Dimensional Holes in GaAs-GaAlAs Heterostructures. L.L. CHANG, E.E. MENDEZ, W.l. WANG, L. EsAKI and P.M. TEDROW 299

B. Two-Dimensional Electrons, Holes and Excitons

(i) Electrons

Specific Heat and Screening 2D-Electrons in GaAs (Invited). E. GoRNIK, R. LASSNIG, H.L. STORMER, W. SEJDENBUSCH, A.C. GosSARD, W. WIEGMANN and M.V. 0RTENBERG 303

2 High Precision de Haas-van Alphen Measurements on a Two-Dimensional Electron Gas. J.P. EISENSTEIN, H.L. STORMER, V. NARAYANAMURTI and A.C. GOSSARD 309

3 Collective Resonances in the Laterally Confined 2D Electron Gas. S.J. ALLEN, F. DERosA, G.J. DOLAN and C.W. Tu 313

4 Self-Consistent Screening in a Heterojunction in Strong Magnetic Fields. T. ANDO andY. MURAYAMA 317 5 Effect of k-Linear Terms on Electronic Properties of 2D Systems. Yu.A. BvcHKOV and E.l. RASHBA 321 6 Electron Subband Structure of a ll(z)-Doping Layer in n-GaAs. A. ZRENNER, H. REISINGER, F. KocH and

K. PLooG 325

(ii) Holes

Energy Levels of Two-Dimensional Holes in GaAs-(AlGa)As Quantum Well Heterostructures. A. PiNCZUK, H.L. STORMER, A.C. GOSSARD and W. WIEGMANN 329

2 Phonon Emission and Carrier Heating in a Two-Dimensional Hole Gas. M.A. CHIN, V. NARAYANAMURTI, H.L. STt>RMER and A.C. GossARD 333

3 Effective Masses of Holes at GaAs-AlGaAs Heterojunctions. D.A. BROIDO and L.J. SHAM 337 4 Spin-split lntersubband Resonances in 2D-Hole Subband Systems. A.D. WIECK, E. BATKE, D. HEITMANN,

J.P. KOTTHAUS and E. BANGERT 341 5 Hole Heating and Hole-Phonon Interaction in Modulation Doped 2D Hole System. J. SHAH, A. PiNCZUK,

H.L. STORMER, A.C. GoSSARD and W. WIEGMANN 345

(iii) Excitons

Slow Energy Relaxation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures (Invited). Y. MASUMOTO, S. SHIONOYA and H. OKAMOTO 349

xxvi Contents

2 Theoretical Study of Population Dynamics of Two-Dimensional Excitons in GaAs-AlAs Quantum Well Structures. T. TAKAGAHARA 355

3 Magneto-Optics of Two-Dimensional Excitons in GaAs-AlAs Heterostructures in High Magnetic Fields. N. MIURA, Y. IWASA, S. TARUCHA and H. OKAMOTO 359

4 Excitons in Semiconductor Doping Superlattices. F. CROWNE, T.L. REINECKE and B.V. SHANABROOK 363 5 Localization of Two-Dimensional Excitons in GaAs-AlGaAs Quantum-Well Layers. M.D. STURGE,

J. HEGARTY and L. GOLDNER 367 6 Change of Coulomb Interaction in Thin CdTe Films. V.S. BAGAEV, N.A. BABAEV, A.G. POIARKOV,

N.N. SALASHCHENKO, V.B. STOPACHINSKII and P.N. LEBEDEV 371

C. Transport in Two Dimensional Electron Systems*

I Superlattices: New Semiconductor Materials (Invited). T.C. McGILL 375 2 The Temperature and Electric Field Dependence of Hopping Conduction in a Two-Dimensional Impurity

Band. G. TIMP, A.B. FOWLER and A. HARTSTEIN 381 3 Tunneling Studies of Uniaxially Stressed (001) Si Inversion Layers. U. KuNZE, G. LAUTZ and E. BEHNEN 385 4 Temperature and Magnetic Field Dependent Thermoelectric Power in GalnAs-lnP Heterojunctions.

R.J. NICHOLAS, T.H.H. VUONG, M.A. BRUMMELL, J.C. PORTAL and M. RAZEGHI 389 5 Capacitively Coupled Measurements of the Magnetoconductivity Tensor in Heterostructures. T.P. SMITH,

M. HEIBLUM and P.J. STILES 393 6 Low-Temperature Magnetotransport in lnAs-GaSb Quantum Wells. E.E. MENDEZ, S. WASHBURN, L. EsAKI,

L.L. CHANG and R.A. WEBB 397 7 Quantum Hot Electron Effects in Low-Dimensional Structures. B.K. RIDLEY 401 8 Hot-Electron Injection in Double-Layered Heterostructures. A. KASTALSKY and S. LURYI 405 9 Surface-Irregularity-Enhanced Dissipation in Semiconductor Two-Dimensional Electron Gas Devices.

T.W. NEE 409 10 Inelastic Scattering and Spin-Orbit Scattering in 2D Systems of GaAs/AlGaAs Heterostructures. S. KAWAJI,

K. KuBOKI, H. SHIGENO, T. NAMBU, J. WAKABAYASHI, J. YOSHINO and H. SAKAKI 413 11 Magnetotunneling and Magnetic Freezeout in n-GaAs-Undoped Al,Ga1_,As-n'GaAs Capacitors.

T.W. HICKMOTT, P.M. SOLOMON, F.F. FANG, R. FISCHER and H. MORKO<; 417 12 Polaron Cyclotron Resonance at an Interface. D.M. LARSEN 421 13 One-Dimensional Localisation Beyond First Order in Narrow Silicon Mosfets. C.C. DEAN and M. PEPPER 425 14 Thermopower in Silicon Inversion Layers. C.J. GIBBINGS and M. PEPPER 429 15 Phonon Scattering in Heterolayer Transport. P.J. PRicE 433 16 Inelastic and Resonant Tunneling in GaAs/AlAs Heterostructures. R.T. COLLINS, A.R. BoNNEFOI,

J. LAMBE, T.C. McGILL and R.D. BURNHAM 437 17 Observation of Vertical Transport in a GaAs/GaAlAs Superlattice by Photoluminescence. A. CHOMETTE,

B. DEVEAUD, J.Y. EMERY, B. LAMBERT and A. REGRENY 441 18 New Microwave-Induced Resonances in the Conductance of a GaAs/Ga1_,Al,As Heterojunction.

E.J. PAKULIS, F.F. FANG and M. HEIBLUM 445 19 Theory of Transient Quantum Transport in Heterostructures. J.R. BARKER, S. CoLLINS, D. LowE and

S. MuRRAY 449 20 Quantum Transport in the Channel of a Field Effect Transistor. B.T. DEBNEY and A.J. HOLDEN 453 21 Resonant Magnetotransport in Short (0.25 to 9 f.Lm) n'nn'GaAs Structures. P.S.S. GUIMARAES, L. EAVES,

J.C. PoRTAL and G. HILL 459

D. Optical and Magneto-optical Properties

1 Interband Magneto-optical Studies of GaAs-Ga1_,Al,As Quantum Wells. J.C. MA.AN, A. FASOLINO, G. BELLE, M. ALTARELLI and K. PLOOG 463

2 Electronic and Optical Properties of Modulation Doped Semiconductor Quantum Wells. G.D. SANDERS and Y.C. CHANG 467

IV. MULTIPLE QUANTUM WELLS

A. Superlattices 1 Semiconductor Superlattices and Quantum Wells (Plenary). L. EsAKI 473 2 HgTe-CdTe Superlattices (Invited). M. Voos, Y. GULDNER, G. BASTARD, J.P. VIEREN, J.P. FAURIE and

A. MILLION 485

*Due to its arrival after the end of the conference, the invited paper by H. Sakaki had to be inserted just before the closing sessions; see page 1551.

Contents xxvii

B. Amorphous Superlattices

1 Amorphous Doping Superlattices. G. H. DoHLER 491 2 Carrier Recombination in Doping Superlattices of a-Si:H. H. HUNDHAUSEN, L. LEY and R. CARIUS 495 3 Hydrogenated Amorphous Germanium/Silicon Superlattices. P.D. PERSANS, B. ABELES, J. ScANLON and

H. STASIEWSKI 499 4 Optical and Electrical Properties of Amorphous Semiconductor Doping Superlattices. K. KAKALIOS and

H. FRITZSCHE 503

C. Electronic States

1 Effects of Submicron Confinement on Shallow Donors in GaAs-Ga1 _ ,Al,As Multiquantum Well Structures. N.C. JAROSIK, B.D. McCoMBE, B.V. SHANABROOK, R.J. WAGNER, J. COMAS and G. WICKS 507

2 Existence of Acoustic Surface Plasmons in Semiconducting Superlattices. G. GIULIANI, G. QIN and J.J. QUINN 511

3 A New Quantum State in Multiple Quantum Well Structures. H.Q. LE, B. LAX, B.A. VOJAK, A.R. CALAWA and W.D. GooDHUE 515

4 Fermi Surface Study of a Semiconductor Superlattice. J. YosHINO, H. SAKAKI and T. FURUTA 519 5 Band Mixing in GaAs-(AlGa)As Heterostructures. R. SooRYAKUMAR, D.S. CHEMLA, A. P!NCZUK,

A. GOSSARD, W. WIEGMANN and L.J. SHAM 523 6 The Effect of Hydrostatic Pressure on Trapping Centers in Strained-Layer Superlattice Structures.

C.E. BARNES, G.A. SAMARA, R.M. BIEFELD, G.C. OSBOURN and T.E. ZIPPERIAN 527

D. Optical and Magneto-Optical Properties

1 Electronic Excitations and Resonant Light Scattering Spectra in Doped GaAs/Al,Ga1,,As Superlattices. S. KATAYAMA and T. ANDO 531

2 Low-Power Non-Linear Optical Phenomena in Doping Superlattices. P.P. RUDEN and G.H. DoHLER 535 3 Optical Properties of ZnS-ZnSe Superlattices Prepared by a HWE. H. FUJIYASU, H. TAKAHASHI,

H. SHIMIZU, A. SASAKI and H. KUWAHARA 539 4 Intra- and Interband Magnetooptical Investigations of PbTe/Pb1_,Sn,Te Superlattices. M. KRIECHBAUM,

G. BAUER, E.J. FANTNER, P. PiCHLER, H. CLEMENS, K.E. AMBROSCH, H. PASCHER and M. VON 0RTENBERG 543

E. Photoluminescence

1 Photoluminescence Studies of Landau Transitions in GaAs/AlGaAs Multiple Quantum Wells. M.C. SMITH, A. PETROU, C.H. PERRY, J.M. WORLOCK and R.L. AGGARWAL 547

2 Photoluminescence Decay Times in Multiple Quantum Well Heterostructures Prepared by Molecular Beam Epitaxy. P. DAWSON, G. DUGGAN, H.l. RALPH and K. WOODBRIDGE 551

3 Photoluminescence and Excitation Spectra of GaAs-Ga(Al)As Strongly Coupled Double Well Superlattice. P.O. EMMEL and G.E. MARQUES 555

F. Raman Scattering

1 Resonant Raman Scattering in GaSb-AlSb Superlattices. C. TEJEDOR, J:M. CALLEJA, F. MESEGUER, E.E. MENDEZ, C.-A. CHANG and L. ESAKI

2 Novel Selection Rules in Resonant Raman Scattering from GaAs Quantum Wells. J.E. ZucKER, A. PiNCZUK, D.S. CHEMLA, A. GOSSARD and W. WIEGMANN

G. Transport

Hot Electron Relaxation and Trapping in Modulation-Doped GaAs/GaAlAs Multiple Quantum Well Heterostructures. J.F. RYAN, R.A. TAYLOR, A.J. TURBERFIELD, A. MACIEL, J.M. WORLOCK, A.C. GOSSARD

559

563

and W. WIEGMANN 567 2 Picosecond Carrier Dynamics in GaAs/Ga1_,Al,As Single and Multi Quantum Well Structures. Y. AoYAGI,

Y. SEGAWA, T. MIYOSHI and S. NAMBA 571 3 Investigation of Carrier Dynamics in GaAs/GaAlAs Quantum Well Structures by Picosecond Luminescence

Spectroscopy. R. HoGER, E.O. GOBEL, J. KUHL, K. PLOOG and G. WEIMANN 575 4 FIR-Emission from Free Carrier Plasma in GaAs/AlGaAs Heterostructures. R.A. HoPFEL, E. GORNIK and

G. WEIMANN 579 5 Recombination Times in GaAs/Al,Ga1_,As Multiple Well Structures. J.E. FoUQUET and A.E. SIEGMAN 583

xxviii Contents

V. IMPURITIES AND DEFECTS

A. Deep Levels

1 Deep Energy Levels in Semiconductors (Plenary). H.G. GRIMMEISS 589 2 Inverted Ordering of Acceptor Bound Exciton States in Semiconductors. Y.C. CHANG 601 3 Electronic Structure of the Point Defects GaP:Vp and Gap:Op. C.E.T. GoN«;ALVES DASILVA, N. MAKIUCHI

and J .R. LEITE 605 4 Many-Electron Localised States of Negative Ions in Semiconductors. M. JAROS 609 5 Electric Field Effect on Multiphonon Transitions at Deep Centres. A. ScHENK, K. IRMSCHER, D. SmsKY,

R. ENDERLEIN, F. BECHSTEDT and H. KLOSE 613 6 Deep Defect Levels in the Wurtzite Semiconductors; SiC, ZnS, ZnSe, and ZnTe. <;:. TUNCAY and

M. TOMAK 617 7 Theory of 3d-Transition-Metal Impurity Properties in Cadmium II-VI Compounds. P. VoGL and

J. BARANOWSKI 623 8 The Nitrogen Isoelectronic Trap in GaAs. D.J. WOLFORD, J.A. BRADLEY, K. FRY and J. THOMPSON 627 9 Symmetry Determination of Copper-Related Centres in GaP. M.J. KANE, P.J. DEAN, M.S. SKOLNICK and

W. HAYES 631 10 Electronic Structure and Phonon Interaction of Neutral Cu-Li Centres in GaP. H.P. GISLASON,

B. MONEMAR, M.E. PISTOL, D.C. HERBERT, A. KANA'AH and B.C. CAVENETT 635

11 Characterization and Annealing of Deep Levels in Epitaxial Silicon. A. MARSHALL and H. G. MAGUIRE 639 12 The Evidence for the Existence of the Hopping Conductivity via Deep Impurity States: InP:Mn.

V.P. KUZNETSOV, M.A. MESSERER, E.M. 0MELJANOVSKY and A.J. POLYAKOV 643

13 Direct Experimental Evaluation of the Electron Impact Excitation Cross Section of Mn2+ in ZnS. G.O. MOLLER and R. MACH 647

B. Shallow Levels

1 Optically Detected Magnetic Resonance Studies of Donor-Acceptor Exchange Interactions in II-VI Semiconductors. R.T. Cox, J.J. DAVIES and R. PICARD 651

2 Hot Exciton Kinetics in the Vicinity of the Neutral Shallow Donors in GaAs. K. AoKI and K. YAMAMOTO 655 3 Direct Optical Observation of an Ionized Acceptor State in n-HgTe. W. KNAP, I. RoscHGER,

W. SZUSZKIEWICZ, H. KRENN, A.M. WITOWSKI and M. GRYNBERG 659 4 Investigation of Roles of Amphoteric Impurity in Pb1_,Sn,Te. S. TAKAOKA, T. HAMAGUCHI, S. SHIMOMURA

and K. MURASE 663 5 Shallow Donors in High Magnetic Fields in InSb under High Hydrostatic Pressures. M. BAJ, L.C. BRUNEL,

S. HUANT, W. TRZECIAKOWSKI, A. WASILEWSKI and R.A. STRADLING 667 6 S-Like Excited States of the 78-meV Acceptor in GaAs. S.R. HETZLER, T.C. McGILL and A.T. HUNTER 671 7 Bound Exciton Recombination in Highly Cu-Doped ZnTe. B. MoNEMAR, P.O. HoLTz, H.P. GISLASON,

N. MAGNEA, CH. UIHLEIN and P.L. LIV 675 8 Positively Charged Acceptors with (ls)3 and (ls)4 Configurations. E.E. HALLER, R.E. McMURRAY, JR.,

N.M. HAEGEL and L.M. FALICOV 679 9 Bound Exciton and Bound-Double-Exciton Complex in Zinc Doped Germanium. H. NAKATA 683

C. Muonium Center

1 Muonium Impurity Centers in Semiconductors (Invited). T.L. EsTLE 687 2 Doping Dependence of the Relaxation of Muonium in Silicon. E. ALBERT, AL MosLANG, E. RECKNAGEL and

A. WEIDINGER 693

D. Impurity Conduction

Hopping Conduction in n-GaAs at High Frequencies and High Magnetic Fields. J.A. CHROBOCZEK, L. EAVES, P.S.S. GUIMARAES, P.C. MAIN, I.P. ROCHE, H. MITTER, J.C. PORTAL, P.N. BUTCHER, M. KETKAR and S. SUMMERFIELD 697

2 Conductivity Relaxations in the Electron Glass. K.L. NGAI and A.K. RAJAGOPAL 701 3 A Study of Thermally Activated Conduction, Hall Effect and Infra-Red Absorption from the Impurity Band in

n-InP. T.H.H. VUONG and R.J. NICHOLAS 705 4 Magnetoimpurity Oscillations of Photoconductivity in n-GaAs. V.N. ZVEREV and D.V. SHOVKUN 709

Contents xxix

E. Impurities and Defects in Si

1 Atomic Diffusion in Silicon (Invited). R. CAR, P.J. KELLY, S.T. PANTELIDES 713 2 Intrinsic Defects in Silicon: Formation and Migration Energies. Y. BAR-YAM and J.D. JOANNOPOULOS 721 3 Migration of Interstitial Aluminum in Silicon. G.A. BARAFF and M. ScHLUTER 725 4 Symmetric Relaxation around Interstitial 3d Impurities in Silicon. U. LINDEFELT and A. ZUNGER 729 5 Hyperfine Interaction of the Iron Impurity Nuclei at the Tetrahedral Interstitial Site in Silicon.

H. KATAYAMA-YOSHIDA and A. ZUNGER 733 6 A Novel Near-Infrared Vibronic Series in Irradiated Silicon. L.T. CANHAM, G. DAVIES and

E.C. LIGHTOWLERS 737

F. Impurities and Defects in GaAs and GaP

1 Defect Identification: EL2 in GaAs (Invited). M. KAMINSKA 741 2 Persistent Photoluminescence Quenching Effect of 0. 77eV Emission in Undoped Semi-insulating GaAs.

P.W. Yu 747 3 EL2 in GaAs-Re-evaluation of Optical Data. P. OMLING, L. SAMUELSON and H. G. GRIMMEISS 751 4 No Large Lattice Relaxations around the Arsenic Antisite Defect in GaAs. G.B. BACHELET and

M. SCHEFFLER 755 5 On the Structure of the S = 1 Antisite Defect in GaP. B.K. MEYER, TH. HANGLEITER, J.-M. SPAETH,

G. STRAUCH, TH. ZELL, A. WINNACKER and R.H. BARTRAM 761 6 Raman Study of Neutron Irradiated GaAs. R.S. BERG, P.Y. Yu and E.R. WEBER 765 7 New Type of Impurity Defects in Semi-Insulating GaAs. V.P. KALINUSHKIN, T.M. MURINA,

E.M. 0MELJANOVSKY, A.M. PROKHOROV and V.I. RAIHSTEIN 769

VI. AMORPHOUS AND NON-CRYSTALLINE SEMICONDUCTORS

A. Atomic and Electronic Structure

(i) Theory

Solids in Limbo: Structure and Properties of Non-Crystalline Semiconductors (Invited). J.C. PHILLIPS 775 2 Real Space Renormalization Formalism for a-Si:H. E.V. ANDA and S.S. MAKLER 783 3 Self-Consistent Solution for Electrons in a-Si. R.A. BARRIO, J. TAQUENA-MARTINEZ, L.E. SANSORES,

E. MARTINEZ and F. YNDURAIN 787 4 Valence-Band Density of Electronic States in Amorphous Silicon. T.M. HAYES, J.W. ALLEN, J.L. BEEBY and

S.-J. OH 791 5 Calculations of the Electronic and Transport Properties in Si-Ge-H Alloys. D.A. PAPACONSTANTOPOULOS,

E.N. ECONOMOU and A.D. ZDETSIS 795 6 Structural Model of Amorphous Silicon with Periodic Boundary Conditions. F. WooTEN, K. WINER and

D. WEAIRE 799 7 A Structural Basis for Electronic Coherence in Amorphous Si and Ge. M.H. BRODSKY, D.P. DIVINCENZO,

R. MosSER! and J.F. SADOC 803 8 The Local Structure of Random Ternary Alloys: Experiment Versus Theory. A. BALZAROTTI, M.T. CZYZYK,

A. KISIEL, N. MOTTA, M. PODGORNY and M. ZIMNAL-STARNAWSKA 807

(ii) Experiment

Investigations of Amorphous Silicon with Synchrotron Radiation (Invited). L. LEY, J. REICHARDT and R.L. JOHNSON 811

2 Measurement of GaP States in a-Si:H by Photocapacitance Spectroscopy. N.M. JOHNSON and D.K. BIEGELSEN 817

3 Structural and Chemical Disorder in Amorphous GaAs. S.G. GREENBAUM, D.J. TREACY, J. COMAS, S.G. BISHOP and B.V. SHANABROOK 821

4 Energy Dependence of the Optical Matrix Element for Hydrogenated Amorphous Silicon. W.B. JACKSON, S.-J. OH, C.C.TSAI, S.M. KELSO and J.W. ALLEN 825

5 Evidence for Existence of Two-Level Tunneling States in a-Si. H. TOKUMOTO, K. KAJIMURA, S. YAMASAKI and K. TANAKA 829

6 Molecular Structure of Melt-Quenched GeSe, and GeS, Glasses Compared. P. BooLCHAND and J. GROTHAUS 833

7 Electrical Properties of Non-Stoichiometric Amorphous CdGeAs2• P. NAGELS 837

XXX Contents

8 Structural and Microstructural Determinations of Crystalline and Amorphous Fractions of Microscrystalline Ge: A Comparison. D.E. ASPNES, C.E. BOULDIN and E.A. STERN 841

B. Doped Amorphous Si

1 Doping Effects in Amorphous Silicon (Invited). R.A. STREET 845 2 Study of Neutron Transmutation Doping in a-Si:H. H. HAMANAKA, K. KURIYAMA, M. YAHAGI, M. SATOH,

K. IWAMURA, C. KIM, Y. KIM, F. SHIRAISHI, K. Tsun and S. MINOMURA 851 3 Effect of Oxygen on the Stability of a-Si:H. Q. WANG, X. ZHANG, Y. WANG, G. BAI and M. JIANG 855 4 Some Properties of B-Doped Silicon Films. D. ZHANG, D. Lu, H. MA, G. DIA, X. ZHu and M. LEI 861

C. Carrier Dynamics

1 Study of Dispersive Relaxations in Amorphous a-Ge,Si,_,:H by Photoinduced Absorption. H.A. STODDART, M. POLLAK and J. TAUC 865

2 Carrier Loss in Dispersive Transport in Amorphous Semiconductors. J.R. EGGERT 869 3 ESR Study of Metastable Carriers in Hydrogenated Amorphous Silicon. F. BouLITROP, J. DuoN,

D.J. DUNSTAN and A. HERVE 873 4 Electron Spin Resonance of Amorphous GaAs, GaP and InP. B. HoHEISEL, J. STUKE, M. STUTZMANN and

W. BEYER 877 5 Carrier Dynamics in Microcrystalline Silicon Examined by Transient Grating Method. Y. AOYAGI,

Y. SEGAWA, S. KOMURO and S. NAMBA 881 6 EPA Analysis of Frequency Dependent Loss Data for a-Ge and a-Si. N. BALKAN, P.N. BUTCHER,

W.R. HOGG, A.R. LoNG and S. SUMMERFIELD 885

D. Absorption and Luminescence

1 Effect of Light on the Threshold Switching Voltage in Amorphous Thin Films. C. CHIANG 889 2 Infrared Spectra of B-and P-Doped a-Si:H Films. V. GRAsso, A.M. MEZZASALMA, F. NERI and

G. SAITTA 893 3 Effect of Light Illumination on the Distribution of GaP State Density in P-Doped a-Si:H. C. LEE and

W. PAUL 897 4 Photoelectronic Properties of a-Si,_,Ge,:H Films. R.A. RUDDER, f.W. CooK, JR. and G. LUCOVSKY 901 5 Anomalous Luminescence Pressure-Dependence in c-As2S3, a-As2SeS2: Native Defect Structure.

B.A. WEINSTEIN 905 6 Evidence for High Pressure Gaseous Molecular Hydrogen in a-Si:H: An Infrared Study. Y.J. CHABAL and

C.K.N. PATEL 909

E. Phonons

1 Phonon Structure of Amorphous Germanium by Inelastic Electron Tunnelling Spectroscopy. A.F.J. LEvi and M.C. PAYNE 913

2 Phonons in Fluorinated Amorphous Silicon Alloys. B.K. AGRAWAL and B.K. GHOSH 917 3 Phonon Density of States and Raman Spectra in Si-Based Amorphous Semiconductors. N. ISHII,

A. MORIMOTO, M. KUMEDA and T. SHIMIZU 921

VII. BULK PROPERTIES

A. Atomic Structure of Semiconductors

1 Theory of Structural Properties of Covalent Semiconductors (Invited). M.T. YIN 927 2 Atomic-Scale Structure of Zincblende Solid Solutions (Invited). J.C. MIKKELSEN, JR. and J.B. BOYCE 933 3 Bond Lengths and Average Lattice Constant of Ga.In,_,As: A Microscopic Model. P. BOGUSLAWSKI and

A. BALDERESCHI 939 4 Stability and Formation of the Clusters with Tetrahedral Units in Germanium-Tin-Selenium Glasses.

K. MuRASE and T. FuKUNAGA 943 5 Optical Observation of Clusters in Distribution of Cd and Hg Ions in Cation Sublattice of Cd1_,Hg,Te.

L.K. VODOPYANOV, S.P. KOZYREV, Yu.A. ALESHCHENKO, R. TRIBOULET andY. MARFAING 947 6 Semiconductor on the Basis of Active ZnO.

E.M. SPASSOVA 951

Contents xxxi

B. Phase Transitions

1 Consequences of the Zincblende-Diamond Order-Disorder Transition for (GaAs),_,Ge2, and other Alloys (Invited). K.E. NEWMAN 955

2 Raman Scattering from Metastable (GaSb)1_,Ge2, Alloys. R. BESERMAN, J.E. GREENE, M.V. KLEIN, T.N. KRABACH, T.C. McGLINN, L.T. ROMANO and S.l. SHAH 961

3 High Pressure Simple Hexagonal Phase of Silicon. R.J. NEEDS and R.M. MARTIN 965 4 2-D Magnetic Phase Transitions in Graphite Intercalation Compounds. K.Y. SZETO, S.T. CHEN,

G. DRESSELHAUS and M.S. DRESSELHAUS 969 5 Magneto-Transport and Electronic Phase Transition in Graphite in High Magnetic Fields. N. MIURA,

T. OSADA and T. GoTo 973 6 Urbach Tail and Phase Transition of Ferroelectric Semiconductor SbSBr. T. INUSHIMA, K. UCHINOKURA and

E. MATSUURA 7 The Electronic Phase Transition in Graphite Under Strong Magnetic Field. Y. lYE, L.E. McNEIL,

G. DRESSELHAUS, G.S. BOEBINGER and P.M. BERGLUND 8 Optical Investigation of Phase Transitions and "Anomalies" in Ti,_,Hf,Se2 Crystals. A. BORGHESI,

G. GUIZETTI, L. NOSENZO, E. REGUZZONI, A. STELLA and F. LEVY

C. Electronic Structure of Semiconductors

(i) Band Gap Theory

Correlation in Tight-Binding Theory. W.A. HARRISON 2 Energy Band Gap in Quasi-Particle Local Density Theory. C.S. WANG and W.E. PiCKETT 3 Band Gap Anomaly in Ternary Chalcopyrites and Optical Bowing in Binary Semiconductor Alloys.

A. ZUNGER 4 Calculation of Optical Gaps in Silicon in the Screened Exchange-Coulomb Hole Approximation.

M.S. HYBERTSEN and S.G. LOUIE 5 Dynamical Correlation Effects on the Quasi-Particle Bloch States of a Semiconductor. W. HANKE 6 Is Core Shifts and the Gap of Tetrahedral Semiconductors. N.E. CHRISTENSEN and G.B. BACHELET

(ii) Electronic States

Pseudopotential and k.p. Calculations of Overlap Integrals for Auger Processes in Direct Gap

977

981

985

989 993

997

1001 1005 1009

Semiconductors. S. BRAND, M.G. BuRT, C. SMITH and R.A. ABRAM 1013 2 Isomer Shift and the Local Chemical Bond in Semiconductors. E. ANTONCIK 1017 3 The Valence Band Parameters of Cadmium Antimonide Determined by Cyclotron Resonance

Measurements. J. LEOTIN, M. GOIRAN, S. ASKENAZY, M. VON 0RTENBERG, M. SINGH, P.R. WALLACE and E.K. ARUSHANOV 1021

4 Temperature Dependence of the Optical Constants of Ge, a-Sn, and InSb: Electronic Interband Transitions. L. VINA, S. LoGOTHETIDIS and H. HocHST 1025

5 Excitons Spectroscopy in Cd,Zn1_,Te Alloys: Homogeneous and Inhomogeneous Broadening. G. NEu, A.A. MBAYE and R. TRIBOULET 1029

6 Induced Superconducting State in Semiconductors and Semimetals. V.Z. KRESIN 1033 7 On the Fermi Surface of Pb,_,Sn,Te and SnTe in the Cubic and Rhombohedral Phase. Y. HE and

A.D.C. GRASSIE 1037 8 Interpretation of the Fermi Surface Warping in Narrow-Gap Semiconductors Using a Simple Tight-Binding

Model. F.A.P. BLOM, H. NACHTEGAELE and J.T. DEVREESE 1043 9 The Use of Hydrostatic Pressure as an Additional Variable in Infrared Magneto-Optical Studies of III-V

Compounds and Alloys. C.J. ARMISTEAD, F. KUCHAR, S.P. NAJDA, S. POROWSKI, C. SOTOMAYOR-TORRES, R.A. STRADLING and Z. WASILEWSKI 1047

10 Bandgap Widening in Heavily Sn-Doped ln20 3• K.-F. BERGGREN, B.E. SERNELIUS, L. ENGSTROM, I. HAMBERG and C.G. GRANQVIST 1051

11 Resonant Polaron Effect in Non-Polar Semiconductor Black Phosphorus. M. KOBAYASHI, T. HATTORI, Y. AKAHAMA, S. ENDO and S. NARITA 1055

(iii) Photoemission Studies

Indirect Transitions in Photoemission of Semiconductors. P. THIRY, A. BARSKI, G. JEZEQUEL, R. PiNCHAU andY. PETROFF 1059

2 Investigation of Electronic States in Germanium and Silicon by Spin Dependent Photoemission. F. MEIER, R. ALLENSPACH, G.L. BONA and D. PEsCIA 1063

xxxii Contents

3 Electronic Band Structure of Rhombohedral Arsenic Studied by Highly-Angle-Resolved Ultraviolet Photoelectron Spectroscopy. H. TOKAILIN, T. TAKAHASHI, T. SAGAWA and K. SHINDO 1067

4 Electronic Structure of Black Phosphorus Studied by Angle-Resolved Photoemission and Polarized Soft X-Ray Emission and Absorption. T. TAKAHASHI, Y. HAYASI, H. ToKAILIN, H. AsAHINA, A. MoRITA, T. SAGAWA and I. SHIROT ANI 1071

5 Photoelectron Energy Distribution and Spin Polarization Measurements from GaAs with Negative Affinity. H.-J. DROUHIN, C. HERMANN, M. EMINYAN and G. LAMPEL 1075

(iv) Metal-Insulator Transition

The Magnetic-Field Dependence of Variable Range Hopping Conduction for Barely Insulating Arsenic-Doped Silicon Samples. W. SHAFARMAN and T.G. CASTNER 1079

2 Spin Fluctuations in Disordered Metals. A.E. RUCKENSTEIN, M.A. PAALANEN and G.A. THOMAS 1083 3 Influence of Disorder on Semiconductor-Metal Transition in InSb. T. SusKI, E. LITWIN-STASZEWSKA and

w. SZYMANSKA 1087 4 Electron Correlation Energies and Metal-Insulator Transition of V02• S. SHIN, S. SuGA, M. TANIGUCHI,

M. SEKI, H. KANZAKI, Y. UEDA, K. KOSUGE and S. KACHI 1091 5 Valence-Conduction Charge Transfer in the Semiconductor-Metal Transition: Si. F. MELONI and

M. SERRA 1095 6 Magnetic Field Induced Metal-Non Metal Transition in Ga,Al3As/GaAs Heterojunctions Under Hydrostatic

Pressure. J.M. MERCY, C. BOUSQUET, A. RAYMOND, J.L. ROBERT, G. GREGORIS, J. BEERENS, J.C. PORTAL and P.M. FRIJLINK 1099

VIII. EXCITATIONS

A. Optical Properties

I Optical Bistability Due to Biexcitons in CuCI. J.B. GRUN, J.Y. BIGOT, B. HONERLAGE and R. LEVY 1105

2 Picosecond High Intensity Excitation of Silicon. H. KuRz, A.M. MALVEZZI and L.A. LoMPRE 1109 3 Light Scattering by Plasmons in Heavily Doped n-Type Ge and Si. N. MESTRES, F. CERDEIRA and

M. CARDONA 1113 4 The Effects of Pressure on the Luminescence and Raman Scattering of CdS. U. VENKATESWARAN,

M. CHANDRASEKHAR and H.R. CHANDRASEKHAR 1117 5 Photothermal Spectroscopy of Plastically Deformed GaAs and InP. F. AUZEL, A.M. JEAN-LOUIS and

D. MEICHENIN 1121 6 Excitonic Effect in the Optical Spectrum of Semiconductors. M. CASTILLO-MussoT and L.J. SHAM 1125 7 Light Scattering Due to Intervalley Electron Density Fluctuations in n-Si. G. CoNTRERAS, A.K. SooD and

M. CARDONA 1129 8 Theory of Spectral Hole-Burning in p-Type Germanium by a Frequency Domain Technique. R.B. JAMES and

D.L. SMITH 1133 9 Study of Photo-Magnetic Effect in Phosphorus-Doped Silicon with a Squid Magnetometer: The Kinetics of D-

Centers. M. KoNDO andY. NISIDA 1137 10 Quasielastic Light Scattering from Silicon and Diamond. S.M. LINDSAY, H.E. JACKSON, R.T. HARLEY and

M.W. ANDERSON 1141

B. Phonons

(i) Theory

Theory of Brillouin Scattering from Surfaces Waves in Semiconductor Supported Films and Layered Structures (Invited). F. NIZZOLI 1145

2 First Principles Study of the Lattice Dynamical Behavior of AlAs. K.J. CHANG and M.L. CoHEN 1151 3 Cations in Off-Center Sites in Cu-Halides and Agl-A Quantitative Approach. G. LivEscu and

0. BRAFMAN 1155 4 Ab-lnitio Calculations of the Elastic Properties of Si, Ge and GaAs. O.H. NIELSEN and R.M. MARTIN 1161 5 CPA Lattice Dynamics of III-V Mixed Crystals: Theory and Experiment. B. JUSSERAND, D. PAQUET and

K. KUNC 1165

(iii) Experiment

Inelastic Tunneling Characteristics in Bi-GaS(GaSe)-Bi and Pb-GaS(GaSe)-Bi Junctions. Y. YAMAGUCHI and Y. NISHINA 1169

Contents xxxiii

2 Time-Resolved Photo-Excited Phonon Transport in GaAs. U. STROM, J.C. CULBERTSON, P.B. KLEIN and

S.A. WOLF 1173

3 Transport Properties of Tera-Hertz Phonons in Gallium Arsenide. B. STOCK, M. FIESELER and

R.G. ULBRICH 1177

4 Very Strong Lattice Coupling in Diamond at Photon Energies up to 1.5 eV above the Bandgap. B.B. PATE,

!..LINDAU and W.E. SPICER 1181

5 Magnetophonon Resonance Recombination of Heated Electron and Hole Due to Two TA-Phonon Emission in

LPE-HgTe. K. TAKITA, T. IPPOSHI, H. 0rAKE and K. MAsuDA 1185

6 Phonon Spectra of Mixed Crystal Cd,Hg,_,Te and Cd,_,Mn,Te. S.C. SHEN, J.H. CHu and H.J. YE 1189

7 Light Scattering in CuCI-Intrinsic and Extrinsic Effects. J.C. MERLE, F. MESEGUER and M. CARDONA 1193

C. Raman Scattering

l Resonant Raman Scattering from Amplitude Modes in Polyacetylene. Z. V ARDENY, E. EHRENFREUND,

0. BRAFMAN and B. HOROVITZ 1197

2 Theoretical Calculation of Resonant Two-Phonon Raman Scattering in Si and Ge. P.B. ALLEN 1203

3 Time-Resolved Resonant Raman Scattering and Hot Luminescence at the IS Ortho-Exciton in Cu,O.

J.S. WEINER and P.Y. Yu 1207

4 Raman Investigation of the Growth Instability of InGaAsP. T. INOSHITA and A. Usm 1211

5 Observation of Anomalous Faust-Henry Coefficients in the Hyper-Raman Scattering from II-VI

Semiconductors. H. PRESTING and H. VoGT 1215

IX. EXCITONIC EFFECTS

A. Excitons and Polaritons

l Exciton Dynamics in Weakly Disordered Semiconductors (Invited). E. CoHEN 1221

2 Initial Process in Self-Trapping of Excitons. H. SUM! 1227

3 Core Excitons in Si,Ge~-> Alloys. B.A. BUNKER, S.L. HULBERT, J.P. STOTT and F.C. BROWN 1231

4 Evidence for Disorder-Enhanced Core Excitons in Amorphous Semiconductors. F. EvANGELIST!,

F. PATELLA, M.K. KELLY, R.A. RIEDEL, G. MARGARITONDO, P. FIORINI, P. PERFETTI and C. QUARESIMA 1235

5 AI 2p Core Exciton in A!Sb. R.L. JOHNSON, J.H. FocK, L. LEY and M. CARDONA 1239

6 High Sensitivity Study of the Green Photoluminescence in Highly Excited Silicon. M.L.W. THEWALT and

W.G. McMuLLAN 1243

7 Intrinsic Lineshape of Exciton-Polariton Photoluminescence Peak in GaAs. E.S. KoTELES, J.P. SALERNO,

W. BLOSS and E.M. BRODY 1247

8 Band Edge Spectra of Highly Excited Gallium Arsenide. G.W. FEHRENBACH, W. ScHAFER, K.H. SCHULDT,

J. TREUSCH and R.G. ULBRICH 1251

9 K-Dependent Splitting of the Upper Exciton Polariton Branch of CuCI in High Magnetic Fields.

D. FRoHLICH, H. HoLSCHER and E. MoHLER 1255

10 Nonlinear Spatial Dispersion of Excitonic Polariton in CuCI. T. ITOH and T. KiRIHARA 1259

11 K-Dependent Longitudinal-Transverse Splitting in CuCI. M.A. KANEHISA 1263

12 Transient Reflectivity and Frequency Dependence of the Amplitude and Phase of Light Reflected from a CdSe

Crystal in the Excitonic Region. C. GouRDON and P. LAVALLARD 1267

13 Time-Resolved Secondary Emission of Free Indirect Excitons in AgBr. H. STOLZ, E. ScHREIBER and

W. VON DER OSTEN 1271

B. Electron-Hole Liquids

l Dissipation Processes in Semiconductors during Irradiation with Femtosecond Pulses. D. HuLIN,

M. COMBESCOT, J. BoK, A. M!GUS, A. ANTONETTI and J.Y. VINET

2 A Study of the Dynamics of the Electron-Hole-Liquid Free-Exciton System in Ge Using No-Phonon

Luminescence. J.C. CULBERTSON, J.E. FURNEAUX and E.E. HALLER

3 High Speed Electron-Hole Plasma Transport in Silicon. A. FORCHEL, B. LAURICH, G. TRANKLE,

H.G. HiLLMER, G. MAHLER, T.X. HOAI and A. AXMANN

4 Turbulence in Electron-Hole Plasma in Ge. G.A. HELD, C.D. JEFFRIES and E.E. HALLER

5 Density-Temperature Relation of Quasi-Equilibrium e-h Plasma in GaAs. H. NATHER and L.G. QUAGLIANO

6 Coexistence of Direct and Indirect Electron-Hole Plasma Components in GaSe. J.L. STAEHLI and V. CAPOZZI

1275

1281

1285 1289

1293

1297

xxxiv Contents

X. TRANSPORT

A. Electrons and Holes

l Persistent Photoconductivity in Semiconductors (Invited). H.J. QUEISSER 1303

2 Ballistic Electron Transport Detected by Seebeck Voltage Measurements on Semiconductor Micro-

Contacts. U. GERLACH-MEYER, E. GMELIN and H.J. QuEISSER 1309

3 Microwave and Far-Infrared Laser Cyclotron Resonance Study in High-Purity ZSe. T. OHYAMA, E. OTSUKA, T. YOSHIDA, M. ISSHIKI and K. IGAKI 1313

4 Direct Evidences of Free Motion of Positive Holes and Excitons Before Self-Trapping in

AgCl,Br1_,(x>0.45). T. KUNII, M. KAWAHARA and T. MASUMI 1317

5 Anisotropic Mobility and Electron-Phonon Interaction in Black Phosphorus. A. MoRITA, H. AsAHINA,

C. KANETA and T. SASAKI 1321

6 A.C. Band Conductivity in Compensated Semiconductors Effect of Potential Fluctuations. B. P!STOULET, S. ABDALLA and F.M. ROCHE 1325

7 Quantum Hot-Carrier Transport in Inhomogeneous Systems. W. P6TZ and D.K. FERRY 1329

8 The Conditions of Radiation and Amplification by Hot Holes in p-Ge under E ...L B Fields.

Yu.K. POZHELA, E.V. STARIKOV and P.N. SHIKTOROV 1333

9 Magneto-Electric Amplification of Light in InSb. T. MORIMOTO and M. CHIBA 1337

10 Ultrafast Transient Transport in Polar Semiconductors. A.R. VASCONCELLOS and R. Luzzi 1341

II Oscillatory Behaviour of the Hall-Factor in Crossed Electric and Magnetic Fields in Polar Semiconductors.

P. WARMENBOL, F.M. PEETERS and J.T. DEVREESE 1345

12 Anomalous Electronic Transport in Boron Carbides. D. EMIN, G.A. SAMARA and C. WooD 1349

13 Surface-Recombination Controlled SNDC and Current Filamentation. E. ScH6LL 1353

14 Evidence for Microwave Photon-Assisted CDW Tunneling in Niobium Triselenide. K. SEEGER, A. PHILIPP

and W. MAYR 1357

B. Spin-Dependent and Recombination Properties

l Conduction Electron Spin Precession in the Band Bending Region of GaAs(llO) (Invited). H. RIECHERT, S.F. ALVARADO, A.N. TITKOV and V.I. SAFAROV 1361

2 Recombination Heating Induced Delayed Energy Relaxation of Nonequilibrium Charge Carriers. D. BIMBERG

and J. MYCIELSKI 1367

3 Stimulated Recombination and the Dynamic Mott Transition in GaTe. C.N. IRONSIDE, R.A. TAYLOR and J.F. RYAN 1371

4 Solution to the Problem of Recombination via Deep Impurities: The Decisive Role of Free Excitons. A. HANGLEITER and M.H. P!LKUHN 1375

XI. SPECIAL MATERIALS AND METHODS

A. Narrow Gap Semiconductors

l The First Observation of Temperature Dependence of Free-Carrier Absorption by Photon-Ionized Impurity-Plasmon Processes in Semiconductors. N. SzuszKIEWICZ and A.M. WITOWSKI 1381

2 Nonlinear Oscillations, Bifurcation and Chaos in n-InSb. D.G. SEILER, C.L. LITTLER, R.J. JUSTICE and

P.W. MILONNI 1385

3 High-Pressure Far-Infrared Spectroscopy of PbTe and In-Doped Pb,_,Sn,Te. S.W. McKNIGHT and

M.K. EL-RAYESS 1389

4 Far Infrared and Transport Studies of In-Doped Pb,_,Sn,Te. T. lcHIGUCHI and H.D. DREW 1393

5 Raman Scattering in the Narrow Gap Alloy Hg,_,Cd,Te. P.M. AMIRTHARAJ, K.K. TIONG, P. PARAYANTHAL, F.H. POLLAK and J.K. FURDYNA 1397

B. Sernimagnetic Semiconductors

1 Raman Scattering by Magnetic Excitations in Diluted Magnetic Semiconductors (Invited). D.L. PETERSON, A.K. RAMDAS and S. RODRIGUEZ. 1401

2 Optical Pumping and Polarized Photoluminescence in (Cd,Mn)Se. J. WARNOCK, D. HEIMAN, P.A. WOLFF, R. KERSHAW, D. RIDGLEY, K. DWIGHT, A. WOLD and R.R. GALAZKA 1407

3 Magnetic Polaron Effects on Bound Excitons. R. PLANEL, J. CERNOGORA, J. GAJ and C. BENOIT A. LA GUILLAUME 1411

Contents xxxv

4 Hopping Magnetoabsorption in Semimagnetic Semiconductor n-Cd,_,Mn,Se. J. MYCIELSKI, A. WITOWSKI, A. WITTLIN and M. GRYNBERG 1415

5 Determination of the Antiferromagnetic Exchange Constant between Nearest-Neighbor Mn + + Ions in Cdo.95MN0.05Se. R.L. AGGARWAL, S.N. JASPERSON, Y. SHAPIRA, S. FONER, T. SAKAKIBARA, T. GOTO, N. MIURA, K. DWIGHT and A. Wow 1419

6 Optical Pumping in Cd,_,Mn,Te. J.A. GAJ 1423 7 Impurity Band Effects in Diluted Magnetic Semiconductors. V.J. GOLDMAN and H.D. DREW 1427 8 A Statistical Mechanical Model for Acceptor Bound Magnetic Polaron in Cd,_,Mn,Te.

A.K. BHATTACHARJEE, R. PLANEL and C. BENOIT A LA GUILLAUME 1431 9 The Free Magnetic Polaron in Pb,_,Mn,S. G. KARCZEWSKI and M. VON 0RTENBERG 1435

10 Observation of Van Vleck-Type Paramagnetism in Semimagnetic Semiconductors. A. TwARDOWSKI, A.M. HENNEL, M. VON 0RTENBERG and M. DEMIANIUK 1439

II On the Question of Exciton Localization in (Cd,Mn)Te by Alloy Disorder. X.-C. ZHANG and A.V. NURMIKKO 1443

C. One-Dimensional Systems

I Excitations in Polymeric Semiconductors (Invited). J. ORENSTEIN 1447 2 Transport and Optical Properties of Fully Oriented Non-Fibrous Crystalline (CH),. H. KAHLERT, G. LEISING,

0. LEITNER, R. UITZ and F. STELZER 1453 3 Electronic Bandstructure of an Incommensurate Crystal. TH. RASING 1457 4 Size Resonance in Quantum Well Wires. V.K. ARORA 1461

D. Layered Compounds

I Electronic Structure of a Monolayer NbSe2Film Grown Heteroepitaxially on the Cleaved Face of 2H-MoS2• A. KOMA, K. SUNOUCHI and T. MIYAJIMA

2 NQR and NMR Study of 181Ta in the Commensurate CDW State of IT-TaS2 and lT-TaSe2-on the Semiconductive Nature of lT-TaS,. M. NAITO and S. TANAKA

3 Angular Resolved Photoemission and Inverse Photoemission Studies of Layered Transition Metal Dichalcogenides. 0. ANDERSON, W. DRUBE, G. KARSCHNICK, I. SCHAFER and M. SK!BOWSKI

4 Graphite Intercalated with Potassium and Ammonia-A Metal-Ammonia Solution in Two Dimensions. S.A. SOLIN and B.R. YoRK

5 Magnetic Breakdown in Graphite Intercalation Compounds. R.S. MARKIEWICZ and C. ZAHOPOULOS

E. Laser Annealing and Ion Implantation

1 Pulsewidth Dependence of the Nonlinear Absorption, Melting Threshold, and Phase Transitions of Silicon

1465

1469

1473

1477 1481

Irradiated by I Micron Picosecond Pulses. A.L. SMIRL, T.F. BoGGESS, l.W. BOYD and S.C. Moss !485 2 Instability at the Melting Threshold of Laser-Irradiated Semiconductors. M. COMBESCOT, J. BoK and

C. BENOIT A LA GUILLAUME 1489 3 Supersaturated Substitutional-Nitrogen Impurities in Nanosecond-Pulsed Laser Annealed Silicon.

K. MURAKAMI, H. ITOH, K. TAKITA, K. MASUDA and T. NISHINO 1493 4 Time-Resolved Studies of Ultrarapid Solidification of Highly Undercooled Molten Silicon Formed by Pulsed

Laser Irradiation. D.H. LOWNDES, G.E. JELLISON, JR., R.F. WOOD and R. CARPENTER 1497 5 Ultrafast Spectroscopy of Very Dense and Hot Electron-Hole Plasmas in Crystalling and Amorphized

Semiconductors. P.M. FAUCHET and A.E. SIEGMAN 1501 6 Free Carriers Density Dependence of the Melting Temperature of Amorphous Germanium. W. MARINE,

J. MARFAING, P. MATHIEZ, F. SALVAN and B. MUTAFTSCHIEV 1505 7 X-Ray Diffraction Study of Self-Implanted Silicon. L. TAPFER and H.C. ALT 1509

XII. MATERIALS, DEVICES AND CHARACTERIZATION: SYMPOSIUM ON FRONTIERS IN SEMICONDUCTORS

Recent Developments in Ill-Y Compound Semiconductor Materials and Devices (Invited). A.Y. CHO 1515 2 Recent Development of Silicon Materials and Devices-On the Behavior of Microdefects and Their Applications

(Invited). Y. MATSUSHITA 1525 3 II-VI Semiconductor Materiats and Devices-Recent Progress (Invited). R.N. BHARGAVA 1531 4 Band-Gap Engineering via Superlattice and Graded-Gap Materials: New Phenomena and Their Device

Applications (Invited). F. CAPASSO 1537

xxxvi

5 Solid State Physics on a Femtosecond Time Scale (Invited) .. C.V. SHANK 6 Transport in Two-Dimensional Electron System in the GaAs/AIGaAs Heterostructures (Invited).

H. SAKAKI

XIII. CLOSING SESSION

Closing Session. ROBERT Z. BACHRACH Program Summary. L.J. SHAM Closing Address. MARVIN L. CoHEN

INDEX

Contents

1545

1551

1559 1567 1571

1575