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Iji Ayobami B . MQ41955447. Proposed Ultra Wideband for Implant Wireless Body Area Network. Supervised by . Michael Heimlich & Tony Parker. 1. Contents. Introduction Proposed Ultra Wideband for Implantable Wireless Body Area Network UWB design focus and constraints - PowerPoint PPT Presentation
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Proposed Ultra Wideband for Implant Wireless Body Area Network
Michael Heimlich&
Tony Parker
Supervised by
Iji Ayobami B.
MQ41955447
1
Contents
Introduction Proposed Ultra Wideband for Implantable
Wireless Body Area Network UWB design focus and constraints Implantable WBAN Requirements for GHz Radio UWB Systems CMOS process Design Method Conclusion
2
Introduction The purpose of this thesis is to design Ultra Wideband
(UWB) Impulse Radio (UWB-IR) transceiver, consisting of a non-coherent receiver and a carrier less transmitter.
The major interest is to optimize and design UWB-IR transceiver with low power, low noise and adaptive circuits capable of transmitting image inside the human body.
3
Aim:• Implantable WBANs : health monitoring and
treatment
• To carry out measurements which include telemetry and video streaming
• UWB is investigated as a candidate for the Implantable WBANs
Proposed Ultra Wideband for Implant Wireless Body Area Network
4
UWB design focus and constraintsTarget:• Better Multipath • Low Power• Low cost• Radiation hard• Wireless sensor• Non coherent• Low complexity• Adaptive circuit• Very smart circuit• Very fast (Pico Second)
• UWB Technology (3.1 - 10.6) GHz
12.8mm
6mm
Transparent
Proposed UWB Radio size
5
Implantable WBAN Requirements for GHz Radio(UWB IEEE 802.15.6 Proposal PHY)
• UWB technology (3.1 - 10.6) GHz • EIRP = -41.3 dBm/MHz• Data rate = up to 10Mbps• Distance = 2cm or more• Battery life = 10 years maybe • Modulation: BPSK, QPSK• Antenna type: Magnetic e.g. loop antenna
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UWB Systems• Types of radio:
– IR – UWB (Impulse response)– MC – UWB (Multicarrier)
• IR UWB– Less complex hardware implementation– Less demanding digital processing– Greater resilience to multipath fading
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CMOS Process
• Silicon on sapphire (Al2O3) 0.25micon CMOS process (sapphicon lib.)– Insulating substrate– Better isolation between circuit elements– Less advance manufacture process (better
performance)– 0.25um SOS technology is similar to 0.13um in
bulk silicon (two generations ahead).
8
Design Method 1.
Definition of Implantable UWB system requirements Design of a Non-Coherent UWB Transceiver system Transistor modelling/Verification of Sapphicon Library
9
Modulation & Demodulation
Front end (LNA, PA,
Filters etc.)
Analogue Baseband (Pulse det. Pulse gen. AD)
Digital Baseband (encoding Decoding)
Core memory
Human interface
Power Battery
Antenna
Radio FrequencySystem & Peripherals
Analogue Baseband Digital Baseband
Design Method 2.
Fig. 1. UWB Transceiver Architecture
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Design Method 3.
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Fig. 2. Transceiver Architecture
Design of a Transceiver using CMOS transistorThis include sub-circuit design Low Noise Amplifier Buffer Amplifier Pulse Generator Pulse shaping filters Power Amplifier Mixers (Passive and Active)
Design Method 4.
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Conclusion
• We are able to establish the technology to use• System requirement has been established• System design • We have commence RF front end design
13
Questions & Answer
14
Thank you