Qspeed High Performance Diodes Family January · PDF fileLXA03B600 600V 3A 2.50V 2.10V 23A 21nC 43nC D2Pak ... Ultrafast Qspeed X-Series Qspeed H-Series ... performance Silicon Rectifiers

Qspeed High Performance Diodes Family

January 2011

© Copyright 2010 Power Integrations 2

Qspeed is now part of Power Integrations Acquisition completed December 31, 2010 Supply chain will be maintained All manufacturing processes and manufacturing sites will be maintained

Power Integrations Fully integrated solutions Large sales and distribution network

– Local support worldwide

Update on Qspeed


PI – End to End Power Supply Solutions Qspeed diodes compliment existing PI high efficiency solutions

CAPZeroSENZeroHiperPFS

HiperTFS

Qspeed


600V X-series

Reverse RecoveryCondition: 400V, 8Amps, 200A/us, 125C

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

1

2

3

4

5

6

7

8

9

0 20 40 60 80 100 120 140 160 180 200t(ns)

ID(A

)

LXA08T600

STTH806DTI

RHRP860

• X-Series are typically lower Switching loss than ST-Tandem and Much Lower loss than Ultrafast

• At lower frequencies, conduction loss is more important than switching loss

• X-Series has a lower Vf than Q&H-Series and could be a better choice at 50-80kHz

TO-220AC94nC36nC70A2.10V2.40V10A600VLXA10T600

FullPak94nC36nC70A2.10V2.40V10A600VLXA10FP600


D2Pak82nC31nC60A2.10V2.35V8A600VLXA08B600




105A

95A

60A

50A

30A

23A

IFSM

8.3mS

TO-220AC43nC21nC2.10V2.50V3A600VLXA03T600




71nC

50nC

QRR

TJ=125ºC

30nC

21nC

QRR

TJ=25ºC

TO-220AC

TO-220AC

Package

2.00V

2.10V

VF

TJ=150ºC

2.27V6A600VLXA06T600

2.42V4A600VLXA04T600

VF

TJ=25ºCIF(AVG)

TJ=150ºCVRRM

MAX600V X-Series

TO-220AC94nC36nC70A2.10V2.40V10A600VLXA10T600







105A

95A

60A

50A

30A

23A

IFSM

8.3mS





71nC

50nC

QRR

TJ=125ºC

30nC

21nC

QRR

TJ=25ºC

TO-220AC

TO-220AC

Package

2.00V

2.10V

VF

TJ=150ºC

2.27V6A600VLXA06T600

2.42V4A600VLXA04T600

VF

TJ=25ºCIF(AVG)

TJ=150ºCVRRM

MAX600V X-Series


• Common Cathode Diodes reduce component cost – One Diode instead of Two

• Common Cathode Diodes reduce manufacturing cost –Less screws, Sil-Pad, Isolation washers, etc.

• Common Cathode diodes save space – Shorter heatsink can be used

TO-220AB71nC30nC50A2.00V2.27V6A600VLXA12T600C*

60A

30A

IFSM8.3mS

TO-220AB50nC21nC2.10V2.42V4A600VLXA08T600C*

82nC

QRRTJ=125ºC

31nC

QRRTJ=25ºC

TO-220AB

Package

2.10V

VFTJ=150ºC

2.35V8A600VLXA16T600C*

VFTJ=25ºC

IF(AVG) TJ=150ºC

VRRMMAX

600V X-Series(Dual Diode)

TO-220AB71nC30nC50A2.00V2.27V6A600VLXA12T600C*

60A

30A

IFSM8.3mS

TO-220AB50nC21nC2.10V2.42V4A600VLXA08T600C*

82nC

QRRTJ=125ºC

31nC

QRRTJ=25ºC

TO-220AB

Package

2.10V

VFTJ=150ºC

2.35V8A600VLXA16T600C*

VFTJ=25ºC

IF(AVG) TJ=150ºC

VRRMMAX

600V X-Series(Dual Diode)

Common Cathode 600V X-series


600V H-Series

Second generation high performance Diodes (optimized for switching frequencies above 80 KHz)

Lower Qrr than equivalent SiC Diodes up to around 120°C Slightly higher Vf and much lower Qrr than X-Series

TO-220AC26nC8.8nC80A2.20V2.56V8A600VQH08TZ600

80A

50A

30A

IFSM

8.3mS

TO-220AC14.9nC5.9nC2.10V2.50V3A600VQH03TZ600


19.4nC

QRR

TJ=125ºC

7.1nC

QRR

TJ=25ºC

TO-220AC

Package(Isolated)

2.15V

VF

TJ=150ºC

2.55V5A600VQH05TZ600

VF

TJ=25ºCIF(AVG)

TJ=150ºCVRRM

MAX600V H-Series

TO-220AC26nC8.8nC80A2.20V2.56V8A600VQH08TZ600

80A

50A

30A

IFSM

8.3mS



19.4nC

QRR

TJ=125ºC

7.1nC

QRR

TJ=25ºC

TO-220AC

Package(Isolated)

2.15V

VF

TJ=150ºC

2.55V5A600VQH05TZ600

VF

TJ=25ºCIF(AVG)

TJ=150ºCVRRM

MAX600V H-Series


300V Products

200A

100A

80A

37A

IFSM

8.3mS

TO-220AC27nC9nC1.34V1.60V6A300VLQA06T300


44nC

38nC

QRR

TJ=125ºC

12nC

10nC

QRR

TJ=25ºC

TO-220AC

TO-220AC

Package

1.40V

1.36V

VF

TJ=150ºC

1.60V16A300VLQA16T300

1.58V10A300VLQA10T300

VF

TJ=25ºCIF(AVG)

TJ=150ºCVRRM

MAX

300V Q-Series(single diode)

200A

100A

80A

37A

IFSM

8.3mS



44nC

38nC

QRR

TJ=125ºC

12nC

10nC

QRR

TJ=25ºC

TO-220AC

TO-220AC

Package

1.40V

1.36V

VF

TJ=150ºC

1.60V16A300VLQA16T300

1.58V10A300VLQA10T300

VF

TJ=25ºCIF(AVG)

TJ=150ºCVRRM

MAX

300V Q-Series(single diode)

Q-Series 300V diodes are the highest performance 300V diodes available. The soft switching of this diode will dramatically reduce overshoot and EMI. Most customers will be able to eliminate snubbers across these diodes when used in output rectification applications.

TO-220AB44nC12nC100A1.40V1.60V16A300VLQA32T300C*

TO-220AB27nC8.5nC37A1.34V1.60V6A300VLQA12T300C*

200A

100A

80A

80A

IFSM

8.3mS

TO-220AB38nC10nC1.36V1.58V10A300VLQA20T300C*

TO-24753nC13nC1.45V1.66V30A300VLQA60A300C*

47nC

38nC

QRR

TJ=125ºC

12nC

10nC

QRR

TJ=25ºC

TO-247

D2PAK

Package

1.40V

1.36V

VF

TJ=150ºC

1.60V15A300VLQA30A300C*

1.58V10A300VLQA20B300C*

VF

TJ=25ºCIF(AVG)

TJ=150ºCVRRM

MAX

300V Q-Series(Dual Diode)

TO-220AB44nC12nC100A1.40V1.60V16A300VLQA32T300C*

TO-220AB27nC8.5nC37A1.34V1.60V6A300VLQA12T300C*

200A

100A

80A

80A

IFSM

8.3mS

TO-220AB38nC10nC1.36V1.58V10A300VLQA20T300C*

TO-24753nC13nC1.45V1.66V30A300VLQA60A300C*

47nC

38nC

QRR

TJ=125ºC

12nC

10nC

QRR

TJ=25ºC

TO-247

D2PAK

Package

1.40V

1.36V

VF

TJ=150ºC

1.60V15A300VLQA30A300C*

1.58V10A300VLQA20B300C*

VF

TJ=25ºCIF(AVG)

TJ=150ºCVRRM

MAX

300V Q-Series(Dual Diode)


H-Series: Higher Performance/Lower Cost

• The new H-Series from Qspeed offers higher performance than our Q-Series at lower cost• Close to SiC performance with much lower cost than SiC

Value = Performance/CostQspeed products have the highest Value of ANY 600V diodes

Performance

Cos

tSiliconCarbide

Tandem

UltrafastQspeedX-Series

QspeedH-Series

Constant Value Line

Qspeed Value Line


CCM PFC Diode Selector Guide

LXA03T600100-350W

LXA04T600350-500W

LXA06T600500-700W

LXA08T600700-900W

LXA10T600900-1200W

LXA15T6001200-1600W

LXA20T6001600-2200W

LXA03T600100-450W

LXA04T600450-600W

LXA06T600600-900W

LXA08T600900-1200W

LXA10T6001200-1500W

LXA15T6001500-2000W

LXA20T6002000-2800W

85-265 VAC 180-265 VAC

QH03TZ600100-350W

QH05TZ600350-600W

QH08TZ600600-900W

QH12TZ600900-1300W

85-265 VAC 180-265 VAC

QH03TZ600100-450W

QH05TZ600450-700W

QH08TZ600700-1000W

QH12TZ6001000-1500W

80 kHz

X-Series is the highest value below 80 kHz and H-Series is the best value above 80 kHz.

This selector guide chooses the best performance based on power level.


Technology


Technology Advantages

Qspeed uses proprietary and patented device design and processes to create the highest performance Silicon Rectifiers in the world

Qspeed products are developed to give optimal performance to cost ratios 600V X-Series was developed for optimal operation at less than 80kHz 600V Q-Series was developed for operation above 80kHz 600V H-Series is the next generation to Q-Series 300V Q-Series are the highest switching performance of any diode

– Optimized for high frequency DC-DC Output rectification The basic structure of the diode is called Merged PN Schottky (MPS)

Combines both a Schottky and PN junction in the same device Qspeed devices are manufactured using a 0.35 micron technology

Small feature size enhances performance Small feature size gives very predictable results (high Yield)

Qspeed defines and controls all manufacturing processes Wafer fab Packaging


Packaging: Q-Series & X-Series 600V

Tin PlatedFrame

Diode

Cathode Anode Cathode Anode

Tin PlatedFrame

300VDiode 2

300VDiode 1

• X-Series: • Standard TO-220 package• Single diode rated for 600V

• H-Series and Q-Series: • Isolated TO-220 package• Series connected 300V Diodes

CeramicSubstrate


H & Q-Series Cross Section


Active Area (MPS) Cross Section

Anode

Cathode

Schottky Contact

P-Wells

Buffer Layer

Hybrid Schottky P-N Diode combines the best of each structure

Low Knee Voltage/High Speed Schottky Low Leakage/High Blocking P-N Deep Trench P-Wells provide conductivity

Modulation efficiently in the bulk material (less hole injection = lower recombination: Qrr)


Forward Bias

Anode

Cathode

When forward biased, the Schottky conducts initially

As forward bias continues, the P-N Junctions conduct and conductivity modulation begins

The combination provides fast early turn-on and also high current density capability


Reverse Bias

Cathode

Q-Series MPS diode with reverse bias

Schottky-only structures would have high leakage

Depletion region builds around the P+ Implants to shield the Schottky barrier and provide low leakage

Anode

VR

IR


Applications


Reverse Recovery Current

Comparison of Qrr for H-Series, Q-Series, X-Series, Tandem, and an Ultrafast diode

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-6

-4

-2

0

2

4

6

8

0 20 40 60 80 100 120 140 160 180 200Time (ns)

ID(A

)


Ultra Low Qrr

Comparison of Qrr for Tandem, SiC, Q-Series, and H-Series versus Tj.

Qrr versus Junction Temperature

0

10

20

30

40

50

60

70

25C 50C 75C 100C 125C

STTH806TTI-Qrr

C3D08060-Qrr

LQA08TC600-Qrr

QH08TZ600-Qrr


Diode RecoveryCurrent

Becomes SwitchCurrent

CCM Boost PFC


Switch CurrentAdds to Turn-On Loss

CCM Boost PFC


Switch Current is Reduced with QspeedReducing Turn-On Loss

CCM Boost PFC


Ultrafast Qspeed

• Designers choose low frequency because of ultrafast diode caused losses

• Using Qspeed allows higher frequency operation

• High Frequency operation let’s designers choose a smaller boost inductor (saves money)

• A smaller boost inductor uses less wire and will have lower losses

• Overall losses at high frequency can be lower than low frequency design

CCM Boost PFC


Comparisons of three Qspeed diodes and SiC in a 500W Server Power Supply Application104kHz Switching Frequency

78.00%

80.00%

82.00%

84.00%

86.00%

88.00%

90.00%

92.00%

10% 20% 50% 75% 100%

CSD04060A QH05TZ600 QH08TZ600 QH12TZ600

CCM Boost PFC


EFF 100V

0.0%

10.0%

20.0%

30.0%

40.0%

50.0%

60.0%

70.0%

80.0%

90.0%

100.0%

0% 5% 10%

15%

20%

25%

30%

35%

40%

45%

50%

55%

60%

65%

70%

75%

80%

85%

90%

95%

100%

LOAD

EFF

STTH806DTI

LXA08TZ600

Comparisons of Qspeed FullPak X-Series and ST Tandem at 850W, 100VAC Input

STTH806DTILXA08TZ6000% 0.0% 0.0%5% 59.5% 60.1%

10% 71.5% 72.0%15% 79.3% 79.7%20% 82.2% 82.5%25% 84.3% 84.7%30% 85.6% 85.9%35% 86.7% 87.0%40% 87.3% 87.5%45% 87.8% 88.0%50% 88.1% 88.2%55% 88.3% 88.5%60% 88.3% 88.4%65% 88.4% 88.4%70% 88.3% 88.4%75% 88.2% 88.2%80% 88.0% 88.1%85% 87.9% 87.9%90% 87.5% 87.5%95% 87.3% 87.3%

100% 87.0% 86.9%

LOAD(835W)

100V/60HzEfficiency(%)

LXA08FP600

FullPak X-Series (100V Data)


Reverse RecoveryCondition: 400V, 8Amps, 200A/us, 100C

-6

-5

-4

-3

-2

-1

0

1

2

3

4

5

6

7

8

9

0 20 40 60 80 100 120 140 160 180 200t(ns)

ID(A

)

Q-Series

Platinum Doped

Diode reverse recovery definitions

• Diode Recovery Softness = tb/ta• Softer diodes have less ringing

• Soft diodes create less EMI• Qspeed diodes have much lower junction capacitance than Silicon Carbide Schottky Diodes

• Lower Capacitance = Less ringing

EMI Performance


Conducted EMI – Ultrafast Diode

840W Power Supply Test Results

EMI Performance



Conducted EMI – Qspeed Diode

EMI Performance


U-Fast Type

Q-Series


EMI Performance

Radiated EMI – UF/Qspeed Diode

Documents

Qspeed High Performance Diodes Family January · PDF fileLXA03B600 600V 3A 2.50V 2.10V 23A 21nC 43nC D2Pak ... Ultrafast Qspeed X-Series Qspeed H-Series ... performance Silicon Rectifiers