Quantum mechanics course Microsoft Power Point Time Dependent Perturbation Theory

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  • 8/14/2019 Quantum mechanics course Microsoft Power Point Time Dependent Perturbation Theory

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    Quantum Transition

    * Time-Dependent Perturbation Theory

    * Fermi-Golden Rule

    *Impurity Scattering

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    Time Evolution of Quantum StatesIn quantum mechanics, one in general deals with two kinds of problems. One is todetermine all possible states of a system. This is possible only if the Hamiltonian ofthe system is time independent, that is, the potentials or forces do not vary from

    time to time. The basic procedure is to solve time-independent Schrdingerequation with all kinds of approximations, as what we have already seen.When the Hamiltonian is time dependent, the state or the wavefunction

    of the system will be also time dependent. In other words, an electron will have aprobability to transfer from one state (molecular orbital) to another. Thetransition probability can be obtained from the time-dependent Schrdinger Eq.

    )()(

    tHt

    ti =

    (23.1)

    Equation 1 says once the initial wavefunction, (0), is known, the wavefunction at a

    given later time can be determined. If H is time independent, we can easily found thatn

    n

    tiE

    n

    neat = /)( (23.2)In this case, it is easy to see that 22 )0()( = t

    so the probability density does not change.

    (23.3)

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    Time-Dependent Perturbation TheoryNow we determine the transition rate according to the above definition. We assumethat the initial state of the system is

    (23.7)k= )0(

    the external perturbation, H, is switched on at t=0. The time dependent SchrdingerEq. is

    )()'()(

    0 tHHt

    ti +=

    (23.8)

    For simplicity, we can rewrite Eq. 23.5 as

    n

    tiE

    n

    nk

    netCt /

    )(')(= (23.9)

    Note that Cnk(t) in Eq. 23.9 is different from Cnk(t) that in Eq. 23.5, but|Cnk(t)|

    2=| Cnk(t)|2 and we can omit the prime in equation 10. Substituting Eq. 23.9

    into Eq. 23.8, we have (can you show it?)

    .'//n

    n

    tiE

    nkn

    n

    tiEnkHeCe

    dt

    dCi nn =

    (23.10)

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    Time-Dependent Perturbation TheoryMultiplying Eq. 23.10 by k and integrate, we obtain

    (23.10)nk

    n

    tEEikkCnHke

    dt

    dCi nk

    >

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    Time-Dependent Perturbation Theory

    >< kHk |'|'

    ,

    1 /)(

    0

    '

    ''

    ' dteHi

    CtEEi

    t

    kkkk

    kk

    =

    We replace Cnk on the right hand side of Eq. 23.10 with Cnk(0) and obtain the first

    order correction

    in the above equation is often denoted as Hkk and it measured thecoupling strength between the k and k states. Solving Eq. 23.13, we have

    (23.13)

    (23.14)

    One important case is that H is fixed once switched on. In this case, Eq. 23.14becomes

    /)(11)(

    '

    /)('

    ''

    '

    kk

    tEEi

    kkkkEEi

    eHi

    tC

    kk

    =

    (23.15)

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    Fermi-Golden Rule

    )(||2

    ]/)[(

    )/)((sin||

    1|)(| '

    2'

    '22

    '

    '

    22'

    '2

    2

    ' kkkk

    t

    kk

    kk

    kkkkEEH

    t

    EE

    tEEHtC

    =

    )(||2

    '

    2'

    '2' kkkkkkEEHw =

    From Eq. 23.15, we can obtain

    So the transition rate is

    (23.16)

    (23.17)

    We can conclude from Eq. 23.17 that (1) the transition rate is independent of time,(2) the transition can occur only if the final state has the same energy as theinitial state. The later one reflects energy conservation. In the case when theenergy levels are continuous band, the number of states near Ek for an interval ofdE

    k

    is In the case when the energy levels are continuous band, the number ofstates near Ek for an interval of dEk is (Ek)dEk , where is the density of states.The transition rate from k state to the states near Ek is then

    )(||2

    )( 2' '2''' kkkkkkk EHdEwEw

    == This is Fermi Golden rule,

    (23.18)

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    Time dependent perturbation theory - Revisited

    Assume the Hamiltonian may be decomposed as H=H0+Vs,

    where H0 is the Hamiltonian of the perfect crystal (described by

    Bloch states), Vs(r,t) is a small random potential. IfVs

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    If the initial wave packet is centered around ko, so that

    In the limit at t, the probability of finding the particle inanother state ko is

    Define the transition rate

    Solve for using the S.E. and the previous expansion

    ( ) ( ) 01 00 tctc kkk

    ( )2

    000

    tcP kt

    kk

    = lim 0k0k

    sV

    ( )t

    tck

    tkk

    2

    0

    00

    = lim

    { } ( ) ( ) ( ) ( ) = +

    k

    tiEkk

    k

    tiEkks

    kk etct

    ietcVH // rr0

    0kc

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    Assume sufficiently weak scattering that cko1, and ckko0 for

    all time. The dominant term in the sum is:

    which integrates to

    Suppose V(r,t) may be Fourier decomposed, so that

    Note that this form of V(r,t) may correspond to interaction with

    lattice vibrations or with optical excitation.

    ( )( ) ( )

    /tEEi

    sk

    k kkekVktct

    tci 00

    0

    0

    00

    =

    ( ) ( ) ( )01

    0

    00

    0

    0

    00 k

    ttEEi

    sk cekVktd

    i

    tc kk

    + =

    /

    ( ) ( )

    ti

    ss eVtV

    =

    rr,

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    Then substituting

    and integrating this last expression leads to

    Since the probability of being in k0 is given by

    ( ) ( )

    /; = =

    000

    000

    1kk

    tti

    sk EEetdkVki

    tc

    ( )

    =

    i

    eV

    itc

    ti

    skk

    k

    1100

    0

    ( ) ( ) tt

    teVi

    tc tikk

    sk

    = sin

    / 200

    0

    1

    ( )2

    000

    tcP kt

    kk

    = lim

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    Substituting forcand taking the magnitude squared gives

    where asymptotically

    This gives the famous Fermis Golden Rule (droping 0s index)

    Assumptions made:(1) Long time between scattering (no multiple scattering events)

    (2) Neglect contribution of othercs (Collision broadening ignored)

    ( ) 2222

    00

    00

    1t

    t

    tVP

    kk

    st

    kk

    =

    sinlim

    ( ) ( ) ( ) tEEtt

    tkk

    t//sinlim ==

    00

    222

    ( )

    ==

    kk

    kk

    skk

    kk EEVt

    P 22

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    A.3 Scattering Theory

    What contributes to ?kk

    Scattering Mechanisms

    Defect Scattering Carrier-Carrier Scattering Lattice Scattering

    CrystalDefects

    Impurity Alloy

    Neutral Ionized

    Intravalley Intervalley

    Acoustic OpticalAcoustic Optical

    Nonpolar Polar Deformation

    potential

    Piezo-

    electric

    Scattering Mechanisms

    Defect Scattering Carrier-Carrier Scattering Lattice Scattering

    CrystalDefects

    Impurity Alloy

    Neutral Ionized

    Intravalley Intervalley

    Acoustic OpticalAcoustic OpticalAcoustic Optical

    Nonpolar Polar Nonpolar Polar Deformation

    potential

    Piezo-

    electric

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    Ionized Impurities Scattering

    (Ionized donors/acceptors, substitutional impurities, charged

    surface states, etc.) The potential due to a single ionized impurity with net charge

    Ze is:

    In the one electron picture, the actual potential seen by

    electrons is screenedby the other electrons in the system.

    ( ) unitsmks

    r

    ZeVi

    =

    4

    r2

    0

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    What is Screening?

    +

    -

    -

    -

    -

    -

    -

    --

    -

    D - Debye screening length

    Ways of treating screening:

    Thomas-Fermi Method

    static potentials + slowly varying in space

    Mean-Field Approximation (Random Phase Approximation)

    time-dependent and not slowly varying in space

    r

    3D:1

    r

    1

    rexp

    r

    D

    screeningcloud

    Example:

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    Considering the induced charge caused by the change in the

    electron gas by the impurity, the net potential seen is

    In the above expression, q is the wavevector associated withFourier transforming the potential (and Poissons equation),

    Vi(q) is the total potential seen by an electron due to an

    impurity, and (q,) is the dielectric function characterizing thepolarization of the electron gas to the impurity potential.

    In linear response theory, this may be calculated in the random

    phase approximation (RPA) to give the Lindhard dielectric

    function

    ( )( )

    ++

    =

    +

    +

    k qk

    k0qk0

    2

    2

    1qiEE

    EfEf

    q

    e

    kscs lim,

    ( )( )

    ( )=

    ,q

    qq

    0i

    i

    VV

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    Assuming low frequencies, and assuming long wavelengths, the

    Thomas-Fermi function is obtained to be of the form:

    where the inverse screening length 2

    is given as (3D):

    In here, n is the carrier density and EF is the Fermi energy.

    Assuming the Fermi Thomas form, inverse Fourier transforming

    gives the form of the screened potential in real space as:

    KTE

    neetemperaturhigh

    Tk

    ne

    FscBsc

    02

    32

    22

    2 =

    =

    = ;;

    ( ) ri er

    ZqV

    =4

    r2

    ( )2

    2

    01q

    qq

    +

    ,lim

    ,

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    The usual argument is that since the us are normalized within a

    unit cell (i.e. equal to 1), the Bloch overlap integral I, isapproximately 1 forn=n [interband(valley)]. Therefore, for

    impurity scattering, the matrix element for scattering is

    approximately

    where the scattered wavevector is:

    This is the scattering rate for a single impurity. If we assume that

    there are Ni impurities in the whole crystal, and that scattering is

    completely uncorrelated between impurities:

    where ni is the impurity density (per unit volume).

    kkq =

    ( ) ( )( )

    volumeVqV

    eZVVsc

    ii =+= ;

    2222

    4222qkrk

    ( ) ( ) 22242

    2222

    42

    sc

    i

    sc

    ikki

    qVeZn

    qVeZNV

    +=

    +

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    The total scattering rate from k to k is given from Fermis golden

    rule as:

    If is the angle between k and k, then:

    Comments on the behavior of this scattering mechanism:

    - Increases linearly with impurity concentration

    - Decreases with increasing energy (k2), favors lowerT

    - Favors small angle scattering

    - Ionized Impurity-Dominates at low temperature, or room

    temperature in impure samples (highly doped regions)

    Integration over all k gives the total scattering rate k :

    ( )( )kk222

    422EE

    qV

    eZn

    sc

    iikk +

    =

    ( )=+== coscos 122kk 222 kkkkkq

    ( )=

    += /;

    *1

    4

    4

    8 222

    2

    332

    42

    D

    DDsc

    iik q

    qkq

    k

    k

    meZn

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    Total Electron Scattering Rate Versus Energy:

    Intrinsic Si GaAs

    In both cases the electron scattering rates were calculated

    by assuming non-parabolic energy bands.