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Redefining Atomic
Layer Deposition
(ALD)
July 13, 2015
External Use
Mobility and Connectivity Drive Performance Gains
Increasing Functionality Driving the Biggest Semiconductor Inflections in Decades
Speech Recognition Gesture Sensor Mobile Payment Ultra Power
Saving Mode
Video Chat Finger Print ID Facial Recognition Wireless Charging
45nm 32 / 28nm 20nm 14nm
High-k Metal Gate n-MOS Epi FinFET
0.3 | 6 GB 0.8 | 13 GB 1.5 | 21 GB 2.2 | 23 GB *
FEATURES
AND
FUNCTIONS
INFLECTIONS
2010 – 2011 2012 – 2013 2014 2015F
Sources: Gartner * Average Mobile DRAM and NAND Content Per Unit of Premium Smartphone
External Use
External Use
Device Scaling Enabled by 3D Inflections
3D Topography Driving Increase in ALD Applications - $1B by 2016
Transistor Memory
0
10
20
30
40
50
60
0102030405060
Physic
al C
ell
Featu
re S
ize (
nm
)
Effective Cell Feature Size (nm)
2D NAND
Source: Intel, IEDM 0
0.2
0.4
0.6
0.8
1
1.2
0 0.4 0.8 1.2 1.6
Norm
aliz
ed P
ow
er
Normalized Speed
Source: TSMC, IEDM
PLANAR HIGH-K METAL GATE
e- e- e-
e- e-
e- e-
e- e-
e- e-
3D FinFET
3D NAND
3D FinFET Reduces Power Consumption 3D NAND Increases Storage Density
External Use
3D Inflections Driving ALD Market Growth
2014 2015F 2016F 2017F 2018F
ALD
Opport
unity (
$)
New 3D Devices
Planar
3D Inflections Driving new Materials
High-Performance ALD required
3D FinFET
Tighter thickness/conformality control
Decreasing thermal budgets
3D NAND
Higher aspect ratios
Vertical, electrical grade films
New 3D Devices will Dominate Market by 2016
External Use
Applied Extends Leadership in Film Deposition
>25 years of leadership
6000 systems
>20 years of leadership
5000 systems
Decade of leadership
900 systems
CVD PVD Epitaxy
NEW
High-Performance
ALD Platform
External Use
Introducing the Applied Olympia™ ALD System
for High-Performance Atomic Layer Deposition
Innovative design delivers high-quality, low-temperature films required for 10nm
Flexible process sequencing broadens spectrum of achievable ALD materials
Proprietary chemical confinement delivers superior defect management
Up to 4X higher productivity
External Use
External Use
Olympia Reconfigures ALD
A
B
Off
Off
On
On
What is ALD?
Divides CVD into two half-reactions
Is self-limiting, producing uniform, conformal deposition
Conventional ALD
Precursor
Wafer is stationary
Alternating chemistries
Purge separates chemistries
Primary technology used today
A B
Olympia ALD
Wafer travels continuously
Spatially separated chemistries
Chemistry-free zones isolate individual chemistries
Precursor
A B
A B
External Use
Modular delivery establishes chemical zones
Purge Elimination enables high productivity
Chemical Confinement delivers superior defect management
Innovative Design
External Use
Treatment X
Modular Design for Atomic-Level Engineering
Precursor Precursor Precursor
20nm
Silicon Oxide
20nm
Silicon Nitride
20nm
Titanium Oxide
100nm
Aluminum
Oxide
20nm
Titanium Nitride
Versatility Broadens Spectrum of Achievable ALD Materials
without Compromising Productivity
A B Thermal
B P
A Plasma
Enhanced
ALD Mode Process Sequence
Atomic-Layer
Treatment X B A
Conventional
ALD
Olympia ALD
Source: Applied Materials, Inc.
External Use
Olympia Solution Industry Challenge
Olympia Differentiation Enables 10nm
45 nm 28 nm 20 nm 14 nm 10 nm 7nm
Therm
al B
udget
Film
Qu
alit
y
Conventional
ALD
Olympia
ALD
B P A
X B A
Unique ALD Sequence Preserves Film Quality at Low Temperatures
Impurities Jeopardize Quality
High-Quality Film
14nm
10nm
20nm
7nm
External Use
Modular Adaptability for Next-Generation Materials
Post-Treated X B A
Pre-Treated X B A
Multi-Chemical C B A
Multi-Chemical
/Treatments C B A X
Olympia ALD Modes
Opens the Way to Widest Spectrum of
Achievable Next-Generation Films
Selective Deposition
Advanced Patterning Films
Low-Temperature Films
Lower-k Films
Nano-Laminates
Higher-k Films
Olympia ALD Precursor Precursor Precursor Treatment X
External Use
Superior Capability with Uncompromised Productivity
Olympia Improves Productivity by Up to 4X
Long process overheads – Low throughput
Exposure to both chemistries – Greater risk of defects
Conventional ALD
Precursor
A B
Olympia ALD
Removal of purge increases throughput – >50% shorter deposition time
Chemical isolation eliminates mixing of chemistries – Superior defect control
Precursor
A B
External Use
Applied Olympia™ ALD System Paradigm Shift in Atomic Layer Depostion
High-quality, low-temperature films
for ≤10nm
Modularity for materials engineering
of future ALD films
Unique chemical confinement to
minimize defects
High-productivity platform
Proven differentiation - DTOR at
multiple customer sites
External Use