References - link.springer.com978-3-642-84778-3/1.pdf · References Chapter 2 2.1 See, for example, P.S. Peercy: Nucl. Instr. Meth. 182/183,337 (1981) and refer ences therein J.D

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Semicond. 17, 1186 (1983) 3.88 G.G. DeLeo, W.B. Fowler, G.D. Watkins: Phys. Rev. B 29,3193 (1984) 3.89 S. Kashchieva, P. Danesh, A. Dyakov: Phys. Stal. Sol. A 83, 411 (1984) 3.90 V.S. Lysenko, M.M. Loshkin, A.N. Yazarov, T.E. Rudenko: Phys. Stat. Sol. A

88, 705 (1985) 3.91 J. Lagowski, M. Kaminska, J.M. Parsey, Jr., H.C. Gatos, M. Lichtensteiger:

Appl. Phys. Lett. 41,1078 (1982) 3.92 S.J. Pearton, E.E. Haller, A.G. Elliot: Electron. Lett. 19, 1082 (1983) 3.93 S.J. Pearton: J. Appl. Phys. 53, 4509 (1982) 3.94 S.J. Pearton, A.J. Tavendale, Electron. Lett. IS, 715 (1982) 3.95 S.J. Pearton, A.J. Tavendale: J. Appl. Phys. 54, 1154 (1983)

336

3.96 M.A. Herman, H. Sitter: Molecular Beam Epitaxy, Springer Ser. Mat. Sci., Vol.7 (Springer, Berlin, Heidelberg 1989)

3.97 D.V. Lang, A.Y. Cho, A.C. Gossard, M. Illegems, W. Weigman: J. Appl. Phys. 47,2558 (1976)

3.98 W.e. Dautremont-Smith, J.e. Nabity, V. Swaminathan, M. Stavola, J. Chevallier, C. W. Tu, S.J. Pearton: Appl. Phys. Lett. 49, 1098 (1986)

3.99 J.C. Nabity, M. Stavola, J. Lopata, W.C. Dautremont-Smith, e.W. Tu, S.J. Pearton: Appl. Phys. Lett. 50, 921 (1987)

3.100 D.V. Lang, R.A. Logan, M. Jaros: Phys. Rev. B 19, 1015 (1979) 3.101 H.-J. Queisser: Proc. 17th lnt'{ Conf. Physics of Semicond., ed. by D. J. Chadi,

W. A. Harrison (Springer, New York 1988) p.1303 3.102 A.I. Evstigneev, V.F. Kuleshov, G.A. Lubochkova, M.V. Pashkovskii, E.B. Yak

imov, N.A. Yakin: Sov. Phys. Semicond. 19,562 (1988) 3.103 S.P. Komissarchuk, L.N. Limarenko, E.P. Lopatinskaya: Narrow Gap Semicon-

ductors and Semimetals (LVOV, Moscow 1983) p.126 3.104 B. Biglari, M. Samimi, M. Hage-Ali, P. Siffert: (unpublished) 3:105 T. Suda, A. Kuroyanaji: Jpn. J. Appl. Phys. 25, L993 (1986) 3.106 S.J. Pearton: Appl. Phys. Lett. 40, 253 (1982) 3.107 A.J. Tavendale, S.J. Pearton: J. Appl. Phys. 54, 1156 (1983) 3.108 S.J. Pearton, J.W. Corbett, T. S. Shi: Appl. Phys. A 43, 153 (1987) 3.109 S.J. Pearton, A.J. Tavendale: J. Appl. Phys. 54, 823 (1983) 3.110 E.E. Haller, W.L. Hansen, F.S. Goulding: Adv. Phys. 30, 93 (1981) 3.111 A.J. Tavendale, S.J. Pearton: Rad. Eff. 63, 39 (1983) 3.112 A.J. Tavendale, S.J. Pearton: J. Appl. Phys. 54, 3213 (1983) 3.113 S.J. Pearton, J.M. Kahn: Phys. Stat. Sol. A 78, K65 (1983) 3.114 A.J. Tavendale: (unpublished)

Chapter 4

4.1 S.J. Pearton, J.W. Corbett, T.S. Shi: Appl. Phys. A 43, 153 (1987) 4.2 J.W. Corbett, J.L. Lindstrom, S.J. Pearton: Mat. Res. Soc. Symp. Proc. 104, 229

(1988) 4.3 C.T. Sah, J.Y.C. Sun, J.J.T. Tzou: Appl. Phys. Lett. 43, 204 (1983) 4.4 C.T. Sah, J.Y.C. Sun, J.J.T. Tzou: J. Appl. Phys. 54, 4378 (1983) 4.5 C.T. Sah, J.Y.e. Sun, J.J.T. Tzou: Appl. Phys. Lett. 43, 962 (1983) 4.6 J.I. Pankove, D.E. Carlson, J.E. Berkeyheiser, R.O. Wance: Phys. Rev. Lett. 51,

2224 (1983) 4.7 J.I. Pankove, R.O. Wance, J.E. Berkeyheiser: Appl. Phys. Lett. 45, 1100 (9184) 4.8 W.L. Hansen, S.J. Pearton, E.E. Haller: Appl. Phys. Lett. 44, 889 (1984) 4.9 M.L. ThewaIt, E.e. Lightowlers, J.I. Pankove: Appl. Phys. Lett. 46, 689 (1985) 4.10 N.M. Johnson, C. Herring, D.J. Chadi: Phys. Rev. Lett. 56, 269 (1986) 4.11 e.T. Sah, J.Y.C. Sun, J.J.T. Tzou: J. Appl. Phys. 54,5864 (1983) 4.12 J.C. Mikkelsen, Jr.: Appl. Phys. Lett. 46, 882 (1985) 4.13 N.M. Johnson: Phys. Rev. B 31, 5525 (1985)

N.M. Johnson, M.D. Moyer: Appl. Phys. Lett. 46, 787 (1985) 4.14 J.I. Pankove, e.W. Magee, R.O. Wance: Appl. Phys. Lett. 47,748 (1985) 4.15 A.J. Tavendale, D. Alexiev, A.A. Williams: Appl. Phys. Lett. 47, 317 (1985) 4.16 T. Zundel, E. Courcelle, A. Mesli, J.C. Muller, P. Siffert: Appl. Phys. A 40, 67

(1986) T. Zundel, A. Mesli, J.e. Muller, P. Siffert: In J. Weber: molecule-like defects in crystalline semiconductors. Appl. Phys. A 49, 31 (1989)

4.17 N.M. Johnson: Appl. Phys. Lett. 47, 874 (1985) 4.18 G.G. DeLeo, W.B. Fowler: Phys. Rev. B 31, 6861 (1985)

337

4.19 J.I. Pankove, D.J. Zanzucchi, C.W. Magee, G. Lucovsky: Appl. Phys. Lett. 46, 421 (1985)

4.20 G.G. DeLeo, W.B. Fowler: In Proc. 13th In!,1 Conf. Defects in Semicond., ed. by L. C. Kimerling, J. M. Parsey, Jr. (Metalurgical Soc. AIME, Warrendale, PA 1985) Yol.l4a, p.745

4.21 M. Stavola, S.J. Pearton, J. Lopata, W.C. Dautremont-Smith: Appl. Phys. Lett. 50, 86 (1987)

4.22 M. Stavola, S.J. Pearton, J. Lopata, W.e. Dautremont-Smith: Phys. Rev. B 37, 8313 (1988)

4.23 G.G. DeLeo, W.B. Fowler: Phys. Rev. Lett. 56, 402 (1986) 4.24 K. Bergman, Michael Stavola, S.J. Pearton, T. Hayes: Phys. Rev. B 38, 9643

(1988) 4.25 C.G. Yan de Walle, Y. Bar-Yam, S.T. Pantelides: Phys. Rev. Lett. 60, 2761

(1988); also MRS Proc. 104,253 (1988) 4.26 K.J. Chang, D.J. Chadi: Phys. Rev. Lett. 60, 1422 (1988); ibid 62, 937 (1989) 4.27 A.J. Tavendale, A.A. Williams, D. Alexiev, S.J. Pearton: MRS Proc. 59, 469

(1986) 4.28 S.J. Pearton, A.J. Tavendale, A.A. Williams, D. Alexiev: In Semiconductor Sili

con, ed. by H.R. Huff (Electrochem. Soc., Pennington, NJ 1986) p.826 4.29 S.J. Pearton, A.J. Tavendale: Presented at Gordon Conf. on Point Defects, Line

Defects and Interfaces in Semiconductors, Plymouth, NH (July 1985) 4.30 C.T. Sah, S.C.S. Pan, C.C.H. Hsu: J. Appl. Phys. 57, 5148 (1985) 4.31 H. Reiss: J. Chern. Phys. 25, 681 (1956) 4.32 J. Wang, C.A. Kittel: Phys. Rev. B 7, 713 (1973) 4.33 Y.A. Singh, C. Weigel, J.W. Corbett, L.M. Roth: Phys. Stat. Sol. 81, 637 (1977) 4.34 H. Katayama-Yoshida, K. Shindo: J. Electron. Mater. 14a 773 (1985) 4.35 A. Mainwood, A.M. Stoneham: J. Phys. C 17, 2513 (1984) 4.36 P. Deak, L.C. Snyder, J.W. Corbett: Phys. Rev. B 37, 6887 (1988)

P. Deak, L.C. Snyder: Rad. Eff. & Defects in Solids III & I12, 77 (1989) 4.37 S.T. Pantelides: Appl. Phys. Lett. 50, 995 (1987) 4.38 G.G. DeLeo, W.B. Fowler: In Hydrogen ill Semiconductors, ed. by J.I. Pankove,

N.M. Johnson (Academic, San Diego 1991) 4.39 N.M. Johnson, C. Herring: Phys. Rev. B 38, 1581 (1988) 4.40 M. Capizzi, A. Mittiga: Appl. Phys. Lett. 50, 918 (1987) 4.41 S. Estreicher: Phys. Rev. B 36, 9122 (1987) 4.42 L.Y.C. Assali, J.R. Leite: Phys. Rev. Lett. 54, 980 (1985); also Phys. Rev. Lett.

55,403 (1986) 4.43 E.C.F. da Silva, L.Y.C. Assali, J.R. Leite, A. Dal Pino, Jr.: Phys. Rev. B 37,

3113 (1988) 4.44 M. Balkanski, R.J. Elliott, W. Nazarewicz, P. Pfeuty: In Lattice Defects in Semi

conductors, ed. by R.R. Hasigati (Univ. of Tokyo Press, Tokyo 1968) p.3 4.45 A.D. Marwick, G.S. Oehrlein, N.M. Johnson: Phys. Rev. B 36, 4539 (1987) 4.46 A.D. Marwick, G.S. Oehrlein, J.H. Barrett, N.M. Johnson: MRS Proc. 104,259

(1988) 4.47 B. Bech Nielsen, J.U. Andersen, S.J. Pearton: Phys. Rev. Lett. 60, 32) (1988) 4.48 Th. Wichert, H. Skudlick, M. Deicher, G. Grube), R. Keller, E. Recknagel, L.

Song: Phys. Rev. Lett. 59, 2087 (1987) 4.49 Th. Wichert, H. Skudlick, H.D. Carstangen, T. Enders, M. Deicher, G. Grubel,

R. Keller, L. Song, M. Stutzmann: MRS Proc.l04, 265 (1988) 4.50 T. Zundel, J. Weber: Phys. Rev. B 39, 13549 (1989) 4.51 K. Muro, A.J. Sievers: Phys. Rev. Lett. 57, 897 (1986) 4.52 E.E. Haller, B. Joos, L.M. Falicov: Phys. Rev. B 24, 4729 (1980) 4.53 J.M. Kahn, R.E. Murray, Jr., E.E. Haller, L.M. Falicov: Phys. Rev. B 36, 8001

(1987)

338

4.54 A.J. Tavendale, S.J. Pearton, A.A. Williams: App!. Phys. Lett. 56, 949 (1990) 4.55 J. Zhu, N.M. Johnson, C. Herring: Phys. Rev. B 41, 12354 (1990) 4.56 R. Car, P.J. Kelly, A. Oshiyama, S.T. Pantelides: Phys. Rev. Lett. 52, 1814

(1984) 4.57 A. Amore-Bonapasta, A. Lappiccirella, N. Tomassini, M. Cappizzi: Phys. Rev. B

36, 6228 (1987) 4.58 A. Amore-Bonapasta, A. Lappiccirella, N. Tomassini, M. Cappizzi: Mat. Sci.

Forum, 38-41, 1057 (1989) 4.59 K. Bergman, M. Stavola, S.J. Pearton, J. Lopata: Phys. Rev. B 37, 2770 (1988) 4.60 K. Bergman, M. Stavola, S.J. Pearton, J. Lopata: MRS Proc. 104,291 (1988) 4.61 J. Chevallier, W.C. Dautremont-Smith, C.W. Tu, S.J. Pearton: App!. Phys. Lett.

47,108 (1985) 4.62 S.J. Pearton, W.C. Dautremont-Smith, J. Chevallier, C.W. Tu, K.D. Cummings:

J. App\. Phys. 59, 2821 (1986) 4.63 J. Chevallier, W.C .. Dautremont-Smith, S.J. Pearton, C.W. Tu, A. Jalil: Proc.3rd

Int'l Symp. Dry Etching and Plasma Deposition in Microelectronics (Cathan, France) Vide 40, 121 (1985)

4.64 Y. Chung, D.W. Langer, R. Becker, D.C. Look: IEEE. Trans. ED-32, 410 (1985) 4.65 Y. Chung, C.Y. Chen, D.W. Langer, Y.S. Park: J. Vac. Sci. Technol. BI, 799

(1983) 4.66 A. Jalil, J. Chevallier, R. Azouay, A. Mircea: J. App\. Phys. 59, 3774 (1986) 4.67 J. Weber, S.J. Pearton, W.C. Dautremont-Smith: App\. Phys. Lett. 49, 1181

(1986) 4.68 J. Weber, F. Bantien, S.J. Pearton, W.C. Dautremont-Smith: In Proc. 14th Int'l

Coni. De/ects in Semicond., ed. by H.J. Von Barde1eben (Trans. Tech., Aedermannsdorf 1986) p.579

4.69 B. Pajot, R.C. Newman, R. Murray, A. Jalil, J. Chevallier, R. Azouay: Phys. Rev. B 37, 4188 (1988)

4.70 A. Jalil, J. Chevallier, J.C. Pesant, R. Mostefaoui, B. Pajot: Appl. Phys. Lett. 50, 439 (1987)

4.71 S.J. Pearton, W.C. Dautremont-Smith, J. Lopata, C.W. Tu, C.R. Abernathy: Phys. Rev. B 36, 4260 (1987)

4.72 S.J. Pearton, W.C. Dautremont-Smith, C.W. Tu, J.C. Nabity, V. Swaminathan, M. Stavola, J. Chevallier: In GaAs and Rei. Compowlds. 1986, ed. by W. T. Lindley, lost. Phys. Conf. Ser. 83,289 (Inst. Phys., Bristol, UK 1987) p.289

4.73 A.J. Tavendale, S.J. Pearton, A.A. Williams, D. Alexiev: App\. Phys. Lett. 56, 1457 (1990)

4.74 N.M. Johnson, R.D. Burnham, R.A. Street, R.C. Thornton: Phys. Rev. B 33, 1102 (1986)

4.75 N. Pan, S.S. Bose, M.H. Kein, G.E. Stillman, F. Chambers, G. Devane, C.R. Ito, M. Feng: App\. Phys. Lett. 51, 596 (1987)

4.76 J. Chevallier, B. Pajot, A. Jalil, R. Mostefaoui, R. Rahbi, M.C. Boisy: MRS Proc. 104,281 (1988)

4.77 W.C. Dautremont-Smith: MRS Proc. 104,313 (1988) 4.78 G.S. Jackson, N. Pan, M.S. Feng, G.E. Stillman, N. Holonyak, Jr., R.D. Burn

hum: App\. Phys. Lett. 51, 1629 (1987) 4.79 R. Murray, R.C. Newman, P.S. Nandhea, R.B. Beall, J.J. Harris, P.J. Wright:

MRS Proc. 104,340 (1988) 4.80 R.H. Bruce: J. App\. Phys. 52, 7064 (1981) 4.81 P. Briddon, R. Jones, G.M.S. Lister: J. Phys. C 21, Ll027 (1988) 4.82 P. Briddon, R. Jones: lost. Phys. Conf. Ser. 88, 237 (1989) 4.83 A. Boudowkha, R. Legros, L. Svob, Y. Marfaing: J. Cryst. Growth. 72, 226

(1985) 4.84 L. Svob, Y. Marfaing: Solid St. Commun. 58, 343 (1986)

339

4.85 J. Weber, M. Singh: MRS Proc. 104,325 (1988) M. Singh, J. Weber: Appl. Phys. Lett. 54, 424 (1989)

4.86 M. Jaros, S. Brand: J. Phys. C 12,525 (l979) 4.87 R.E. McMurray, Jr., N.M. Haegel, E.E. Haller, L.M. Falicov: Solid State

Commun. 61, 27 (l987) 4.88 G.R. Antell, A.T.R. Briggs, B.R. Butler, S.A. Kitching, J.P. Stagg, A. Chen,

D.E. Sykes: ApI. Phys. Lett. 53, 758 (1988) 4.89 E.M. Omeljanovsky, A.Y. Pakhomov, A.Y. Polyakov: Proc. Int'! Conf. Defects

in Semicond., ICDS-15, Budapest, 1988 (Trans Tech, Aedermannsdorf 1989) pp.1 063-1 067

4.91 e.G. Crokes, D. Lancefield, K. Waterhouse, A. Adams, D. Greene, R. Glen: Electronics Lett. 15,369 (1990)

4.91 J. Chevallier, A. Jalil, B. Theys, J.C. Pesant, M. Auconturier, B. Rose, A. Mircea: Semicond. Sci. Technol. 4, 87 (1989)

4.92 B. Pajot, T. Chevallier, A. Jalil, B. Rose: Semicond. Sci. Techn. 4, 91 (1989) 4.93 S. Estreicher: Phys.,Rev. B 41, 5447 (1990); ibid 41,9886 (1990) 4.94 S. Estreicher: Phys. Rev. B 36, 9122 (1987) 4.95 A. Bonapasta, A. Lappiccirella, N. Tomassini, M. Capizzi: Phys. Rev. B 36,

6228 (1987) 4.96 R.F. Kiefl, M. Celio, T.L. Estle, S.R. Kreitzman, G.M. Lake, T.M. Riseman,

E.J. Ansaldo: Phys. Rev. Lett. 60, 224 (1988) 4.97 R.F. Kiefl, M. Celio, T.L. Estle, G.M. Luke, S.R. Kreitzman, J.H. Brewer, D.R.

Noaks, E.J. Ensaldo, K. Nishiyama: Phys. Rev. Lett. 58, 1780 (1987) 4.98 J. Chevallier, B. Clerjaud, B. Pajot. In Hydrogen in Semiconductors, ed. by J.I.

Pankove, N.M. Johnson (Academic, New York 1990)

Chapter 5

5.1 M. Stavola, S.J. Pearton: In Hydrogen in Semiconductors, ed. by J.1. Pankove, N.M. Johnson (Academic, San Diego 1991) p.139

5.2 J. Chevallier, B. Clerjaud, B. Pajot: In Hydrogen in Semiconductors, ed. by J.I. Pankove, N.M. Johnson (Academic, San Diego 1991) p.447

5.3 G. Davies: In Defects in Electronic Materials, ed. by M. Stavola, S.J. Pearton, G. Davies (MRS, Pittsburgh 1988) p.65

5.4 G.G. De Leo, W.B. Fowler: In Hydrogen in Semiconductors, ed. by J.I. Pankove, N.M. Johnson (Academic, San Diego 1991) p.511

5.5 A.S. Barker, A.J. Sievers: Rev. Mod. Phys. 47, Suppl. No.2 (1975) 5.6 R.C. Newman: Adv. Phys. 18, 545 (1969) 5.7 R.e. Newman: In Growth and Characterization of Semiconductors, ed. by R.A.

Stradling, P.C. Klipstein (Hilger, Bristol 1990) p.I05 5.8 J.1. Pankove, P.J. Zanzucchi, C.W. Magee, G. Lucovsky: Appl. Phys. Lett. 46,

421 (1985) 5.9 N.M. Johnson: Phys. Rev. B 31, 5525 (1985) 5.10 B. Bech Nielsen, J.U. Andersen, S.J. Pearton: Phys. Rev. Lett. 60,321 (1988) 5.11 A.D. Marwick, G,S. Oehrlein, N,M. Johnson: Phys. Rev. B 36, 4539 (1987) 5.12 A.D. Marwick, G.S. Oehrlein, J. H. Barrett, N.M. Johnson: In Defects in Elec

tronic Materials, ed. by M. Stavola, S.J. Pearton, G. Davies (MRS, Pittsburgh, 1988) p.259

5.13 G.G. DeLeo, W.B. Fowler: J. Elect. Mater. 14a, 745 (1985) 5.14 G.G. DeLeo, W.B. Fowler, Phys. Rev. B 31, 6861 (1985) 5.15 L.Y.C. Assali, J.R. Leite: Phys. Rev. Lett. 55,980 (1985) 5.16 L.Y.e. Assali, J.R. Leite: Phys. Rev. Lett. 56, 403 (1986)

340

5.17 M. Stavola, S.J. Pearton, J. Lopata, W.C. Dautremont-Smith: Appl. Phys. Lett. 50, 1086 (1987)

5.18 M. Stutzman, C.P. Herrero: In De/ects in Electronic Materials, ed. by M. Stavola, S.J. Pearton, G. Davies (MRS, Pittsburgh, PA 1988) p.271

5.19 E.C.F. da Silva, L.V.c. Assali, J.R. Leite, A. Dal Pino Jr.: Phys. Rev. B 37, 3113 (1988)

5.20 A. Amore-Bonapasta, A. Lapiccirella, N. Tomassini, M. Capizzi: Phys. Rev. B 36,6228 (1987)

5.21 K.J. Chang, D.J. Chadi: Phys. Rev. Lett. 60, 1422 (1988) 5.22 P.J.H. Denteneer, C.S. Nichols, C.G. Van de Walle, S.T. Pantelides: In Proc. 19th

Inl'l Coni. on the Physics 0/ Semiconductors, ed. by W. Zawadzki (lnst. Phys. Polish Academy of Science, Warsow 1988) p.999

5.23 P.J.H. Denteneer, C.G. Van de Walle, Y. Bar-Yam, S.T. Pantelides: In De/ects in Semiconductors 15, ed. by G. Ferenczi (Trans Tech, Aedermannsdorf 1989)

5.24 P.J.H. Denteneer, C.G. Van de Walle, S.T. Pantelides: Phys. Rev. B 39, 10809 (1989)

5.25 C.G. Van de Walle, P.J.H. Denteneer, Y. Bar-Yam, S.T. Pantelides: In Shallow Impurities in Semiconductors 1988, ed. by B. Monemar (lOP, Bristol 1989) p.405

5.26 S.K. Estreicher, L. Throckmorton, D.S. Marynick: Phys. Rev. B 39, 13241, (1989)

5.27 M. Stutzman, C.P. Herrero: Appl. Phys. Lett. 51, 1413 (1987) 5.28 M. Stavola, S.J. Pearton, J. Lopata, W.C. Dautremont-Smith: Phys. Rev. B 37,

8313 (1988) 5.29 G.D. Watkins, W.B. Fowler, G.G. DeLeo, F.S. Ham: private communication 5.30 E.E. Haller, L.M. Falicov: Phys. Rev. Lett. 41, 1192 (1978) 5.31 E.E. Haller, B. Joos, L.M. Falicov: Phys. Rev. B 21, 4729 (1980) 5.32 E.E. Haller: In Shallow Impurities in Semiconductors 1988, ed. by B. Monemar

(lOP, Bristol 1989) p.425 5.33 E.E. Haller: In Hydrogen in Semiconductors, ed. by J.I. Pankove, N.M. Johnson

(Academic, San Diego 1991) p.351 5.34 K. Muro, A.J. Sievers: Phys. Rev. Lett. 57, 897 (1986) 5.35 M. Stavola, K. Bergman, S.J. Pearton, J. Lopata: Phys. Rev. Lett. 61, 2786

(1988) 5.36 C.P. Herrero, M. Stutzman: Solid State Commun. 68, 1085 (1989) 5.37 M. Cardona: Phys. Stat. Sol. (b) 118,463 (1983) 5.38 G.G. DeLeo, W.B. Fowler: Bull. Am. Phys. Soc. 34, 834 (\989) 5.39 D.R. Bosomworth, W. Hayes, A.R.L. Spray, G.D. Watkins: Proc. Roy. Soc.

London A 317, 133 (1970) 5.40 M. Stutzman: Phys. Rev. B 35, 5921 (1987) 5.41 C.P. Herrero, M. Stutzman: Phys. Rev. B 38, 12668 (1988) 5.42 M. Stutzman, C.P. Herrero: In Proc. 19th llIl'l Coni. Physics 0/ Semiconductors,

ed. by W. Zawadzki (Inst. Phys., Polish Academy of Science, Warsaw 1988) p.1147

5.43 B. Pajot, A. Chari, M. Aucouturier, M. Astier, A. Chantre: Solid State Commun. 67, 855 (1988)

5.44 G.D. Watkins, W.B. Fowler, M. Stavola, G.G. DeLeo, D. M. Kozuch, Phys. Rev. Lett. 64, 467 (1990)

5.45 G.D. Watkins, W.B. Fowler, G.G. DeLeo, M. Stavola, D.M. Kozuch, S.J. Pearton, J. Lopata: In Impurities. De/ects and Di/fusion in Semiconductors: Bulk and Layered Structures, ed. by D.J. Wolford, J. Bernhole, E.E. Haller MRS Proc. 163,367 (1990)

5.46 E. Fermi: Z. Phys. 71, 250 (1931) 5.47 See, for example, G. Herzberg, Molecular Spectra and Molecular Structure 1/.

341

In/rared and Raman Spectra 0/ Polyatomic Molecules (Van Nostrand, New York 1945) pp.215-218,266

5.48 N.M. Johnson, C. Herring, D.J. Chadi: Phys. Rev. Lett. 56, 769 (1986) 5.49 K. Bergman, M. Stavola, S.J. Pearton, J. Lopata: Phys. Rev. B 37, 2770 (1988) 5.50 K. Bergman, M. Stavola, S.J. Pearton, J. Lopata: In De/ects in Electronic Materi-

als, ed. by M. Stavola, S.J. Pearton, G. Davies (MRS, Pittsburgh, 1988) p.281 5.51 D. Tripathi, P.e. Srivastava, S. Chandra: Phys. Rev. B 39, 13420 (1989) 5.52 D.M. Kozuch: unpublished 5.53 G.G. DeLeo, W.B. Fowler, T. M. Sudol, K.J. O'Brien: Phys. Rev. B 41, 7581

(1990) 5.54 A. Amore-Bonapasta, A. Lapiccirella, N. Tomassini, M. Capizzi: In De/ects in

Semiconductors 15, ed. by G. Ferenczi (Trans Tech, Aedermannsdorf 1989) p.l051

5.55 P.J.H. Denteneer, e.G. Van de Walle, S.T. Pantelides: Phys. Rev. B 41, 3885 ( 1990)

5.56 S.B Zhang, D.J. Chadi: Phys. Rev. B 41, 3882 (1990) 5.57 S.J. Pearton, J.W. Corbett, T.S. Shi: Appl. Phys. A 43, 153 (1987) 5.58 S.J. Pearton, M. Stavola, J.W. Corbett: In De/ects ill Semiconductors 15, ed. by

G. Ferenczi (Trans Tech, Aedermannsdorf 1989) p.25 5.59 H.J. Stein: J. Elect. Mat. 4, 159 (1975) 5.60 B. Bech Nielsen, J. Olajos, H.G. Grimmeiss: In De/ects in Semiconductors 15,

ed. by G. Ferenczi (Trans Tech, Aedermannsdorf 1989) p.1003 5.61 N.N. Gerasimenko, M. Rolle, L.-J. Cheng, Y. H. Lee, J. C. Corelli, J.W. Cor-

bett: Phys. Stat. Sol. (b) 90, 689 (1978) 5.62 J. Tatarkiewicz, K. Wieteska: Phys. Stat. Solidi A 66, KIOI (1981) 5.63 J. Tatarkiewicz, A. Krol: Phys. Rev. B 32, 8401 (1985) 5.64 B.N. Mukashev, K.N. Nussupov, M.F. Tamendarov: Phys. Lett. A 72, 381

(1979) 5.65 B.N. Mukashev, K.N. Nussupov, M.F. Tamendarov, V.V. Frolov: Phys. Lett. A

87,376 (1982) 5.66 B.N. Mukashev, M.F. Tamendarov, S. Z. Tokmoldin: In De/ects in Semiconduc

tors 15, ed. by G. Ferenczi (Trans Tech, Aedermannsdorf 1989) p.1039 5.67 G.R. Bai, M.W. Qi, L.M. Xie, T.S. Shi: Solid State Commun. 56, 277 (1985) 5.68 T.S. Shi, G.R. Bai, M.W. Qi, and J.K. Zhan: In De/eels in Semiconductors 14,

ed. by H. J. von Bardeleben (Trans Tech, Aedermannsdorf 1986) p.597 5.69 B. Bech Nielsen, J. Olajos, H.G. Grimmeiss: Phys. Rev. B 39, 3330 (1989) 5.70 H.J. Stein: Phys. Rev. Lett. 43, 1030 (1979) 5.71 T.S. Shi, S.N. Sahu, G.S. Oehrlein, A. Hiraki, J.W. Corbett: Phys. Stat. Sol. (a)

74,329 (\982) 5.72 B. Bech Nielsen, H.G. Grimmeiss: Phys. Rev. B 40, 12403 (\989) 5.73 P. Deak, L.C. Snyder, M. Heinrich, J. W. Corbett: preprint 5.74 B. Bech Nielsen: Phys. Rev. B 37, 6353 (\988) 5.75 V.A. Gordeev, Y.V. Gorelkinski, R.F. Konopleva, N.N. Nevinnyi, Y.V. Obu

khov, V.G. Firsov: preprint (\987) 5.76 Y.V. Gorelkinski, N.N. Nevinnyi: Sov. Tech. Phys. Lett. 13,45 (1987) 5.77 R.F. Kiefl, J.H. Brewer, S.R. Kreitzman, G.M. Luke, T.M. Riseman, T.L. Estle,

M. Celio, E. J. Ansaldo: In De/ects in Semiconductors 15, ed. by G. Ferenczi (Trans Tech, Aedermannsdorf 1989) p.967

5.78 e.G. Van de Walle, P.J.H. Denteneer, Y. Bar-Yam, S.T. Pantelides: Phys. Rev. B 39, 10791 (\989)

5.79 G.G. DeLeo, M.J. Dorogi, W.B Fowler: Phys. Rev. B 38, 7520 (\988) 5.80 P. Deak, L.e. Snyder, J.W. Corbett: Phys. Rev. B 37, 6887 (1988) 5.81 A.A. Kaplyanskii: Opt. Spectrosc. (USSR) 16,329 (1964) 5.82 A.E. Hughes, W.A. Runciman: Proc. Phys. Soc. London 90, 827 (1967)

342

5.83 K. Bergman, M. Stavola, S.J. Pearton, T. Hayes: Phys. Rev. B 38, 9643 (1988) 5.84 M. Stavola, K. Bergman, S.J. Pearton, J. Lopata: In Shallow Impurities in Semi

conductors 1988, ed. by B. Monemar (loP, Bristol, 1989) p,447 5.85 G.D. Watkins, J.W. Corbett: Phys. Rev. 121, 1001 (1961) 5.86 J.W. Corbett, G.D. Watkins, R.M. Chrenko, R.S. McDonald: Phys. Rev. B 121,

1015 (1961) 5.87 Y. Fugai, H. Sugimoto: Adv. Phys. 34, 263 (1985) 5.88 J.M. Kahn, L.M. Falicov, E.E. Haller: Phys. Rev. Lett. 57, 2077 (1986) 5.89 G.D. Watkins: In Defects in Semiconductors 15, ed. by G. Ferenczi (Trans Tech,

Aedermannsdorf 1989) p.39 5.90 P. J. H. Denteneer, C. G. Van de Walle, and S. T. Pantel ides: Phys. Rev. Lett.

62, 1884 (1989) 5.91 G.G. DeLeo: Private communication and in [5.79] 5.92 R.E. Peale, K. Muro, A.J. Sievers: Phys. Rev. B 41,5881 (1990) 5.93 A.M. Stoneham: Phys. Rev. Lett. 63, 1027 (1989)

Chapter 6

6.1 B. Pajot: In Impurities. Defects and Diffusion in Semiconductors: Bulk and Layered Structures, ed. ·by D.F. Wolford, J. Bernhole, E.E. Haller (MRS, Pittsburgh 1990) p,465

6.2 J. Chevallier, B. Clerjaud, B. Pajot: In Hydrogen in Semiconductors, ed. by J.1. Pankove, N.M. Johnson (Academic, San Diego 1991) p.447

6.3 B. Pajot: In Shallow Impurities in Semiconductors 1988, ed. by B. Monemar (lOP, Bristol 1989) p.437

6.4 P. Briddon, R. Jones: In Shallow Impurities in Semiconductors, ed. by B. Monemar (lOP, Bristol 1989) p,459

6.5 B. Pajot, A. Jalil, J. Chevallier, R. Azoulay: Semicond. Sci. Techno!. 2, 305 (1987)

6.6 P.S. Nandhra, R.e. Newman, R. Murray, B. Pajot, J. Chevallier, R.B. Beall, J.J. Harris: Semicond. Sci. Techno!. 3, 356 (1988)

6.7 B. Pajot, J. Chevallier, A. Jalil, B. Rose: Semicond. Sci. Techno!. 4, 91 (1989) 6.8 B. Cler jaud: Physica B 170, 383 (1991) 6.9 J. Chevallier, B. Pajot, A. Jalil, R. Mostefaoui, R. Rahbi, M.C. Boissy: In

Defects in Electronic Materials, ed. by M. Stavola, S.J. Pearton, G. Davies (MRS, Pittsburgh 1988) p.337

6.10 G. Herzberg: Spectra of Diatomic Molecules, 2nd edn. (Van Nostrand, New York 1950)

6.11 S.J. Pearton, W.e. Dautremont-Smith, J. Chevallier, C.W. Tu, K.D. Cummings: J. App!. Phys. 59, 2821 (1986)

6.12 B. Pajot, R.e. Newman, R. Murray, A. Jalil, J. Chevallier, R. Azoulay: Phys. Rev. 37, 4188 (1988)

6.13 D.M. Kozuch, M. Stavola, S.J. Pearton, C.R. Abernathy, J. Lopata: In Impurities. Defects and Diffusion in Semiconductors: Bulk and Layered Structures, ed. by D.F. Wolford, J. Bernhole, E.E. Haller (MRS, Pittsburgh 1990) p,477

6.14 W.C. Dautremont-Smith, J. Lopata, S.J. Pearton, L.A. Koszi, M. Stavola, V. Swaminathan: J. App!. Phys. 66, 1993 (1989)

6.15 A. Jalil, J. Chevallier, J.C. Pesant, R. Mostefaoui, B. Pajot, P. Murawala, R. Azoulay: App!. Phys. Lett. 50, 439 (1987)

6.16 M. Stavola, S.J. Pearton: In Hydrogen in Semiconductors, ed. by J.I. Pankove, N.M. Johnson (Academic, San Diego 1991) p.139

6.17 K. Bergman, M. Stavola, S.J. Pearton, J. Lopata: Phys. Rev. B 37, 2770 (1988)

343

6.18 S.K. Estreicher, S.K. Throckmorton, D.S. Marynick: Phys. Rev. B 39, 13241 (l989)

6.19 A. Amore-Bonapasta, A. Lapiccirella, N. Tamassini, M. Capizzi: In De/ects in Semiconductors 15, ed. by G. Ferenczi (Trans Tech, Aedermannsdorf 1989) p.l051

6.20 P.l.!-!. Denteneer, e.G. Van de Walle, S.T. Pantelides: Phys. Rev. B 39, 10809 (1989)

6.21 S.B. Zhang, D.J. Chadi: Phys. Rev. B 41, 3885 (1990) 6.22 G.G. DeLeo, W.B. Fowler, T.M. Sudol, K.J. O'Brien: Phys. Rev. B 41, 7581

(l990) 6.23 B. Clerjaud, D. cate, C. Naud: Phys. Rev. Lett. 58, 1755 (l987) 6.24 B. Clerjaud, D. cate, M. Krause, C. Naud: In De/ects in Electronic Materials,

ed. by M. Stavola, S.J. Pearton, G. Davies (MRS, Pittsburgh 1988) p.341 6.25 B. Clerjaud, D. cate, C. Naud: J. Cryst. Growth 83, 190 (1987) 6.26 J. Tatarkiewicz, B. Clerjaud, D. cate, F. Gendron, A.M. Hennel: App!. Phys.

Lett. 53, 382 (1988) 6.27 B. Clerjaud, private communication 6.28 M. Stavola, S.l. Pearton, J. Lopata, C.R. Abernathy, K. Bergman: Phys. Rev. B

39,8051 (1989) 6.29 A.A. Kaplyanskii: Opt. Spectrosc. (USSR) 16,329 (1964) 6.30 K. Bergman, M. Stavola, S.J. Pearton, T. Hayes: Phys. Rev. B 38, 9643 (1988) 6.31 G.G. DeLeo: private communication 6.32 D.M. Kozuch, M. Stavola, S.J. Pearton, J. Lopata: unpublished 6.33 T. Zundel, A. Mesli, J.C. Muller, P. Siffert: App!. Phys. A 48, 31 (1989) 6.34 J. Zhu, N.M. Johnson, C. Herring: Phys. Rev. B 41, 354 (1990)

Chapter 7

7.1 F. Lu, J.W. Corbett, L.C. Snyder: Phys. Lett. A 77, 250 (1990) 7.2 S.T. Picraux, F.L. Vook: Phys. Rev. B 14, 1593 (1976) 7.3 V.A. Singh, J.W. Corbett, e. Weigel, L.M. Roth: Phys. Lett. A 65, 261 (l978) 7.4 R.C. Bingham, M.J.S. Dewar, D.C. Lo: J. Am. Chern. Soc. 97, 1285 (1975) 7.5 L.C. Snyder, Z.R. Wasserman, J.W. Moskowitz: Int. J. Quant. Chern. 21, 565

(1982) 7.6 J.W. Coburn, H.F. Winters: Ann. Rev. Mater. Sci. 12,91 (1983) 7.7 J.C. Mikkelsen Jr., L-W. Wu: App!. Phys. Lett. 49, 105 (1986) 7.8 R.G. Freiser, F.J. Thonbello, N.B. Zingerrnan, W.K. Chu, S.R. Mader: J. Elec

trochern. Soc. 130,2237 (1983) 7.9 X.C. Mu, S.J. Fonash, G.S. Oehrlein, S.N. Chakravarti, e. Parks, J. Keller: J.

App!. Phys. 59, 2598 (1986) 7.10 G.S. Oehrlein, R.M. Tromp, Y.H. Lee, E.J. Petrillo: App!. Phys. Lett. 45, 420

(1984) 7.1 I J.L. Lindstrom, G.S. Oehrlein, G.J. Scilla, A.S. Yapsir, J.W. Corbett: J. App!.

Phys. 65, 3297 (1989) 7.12 X.e. Mu, S.J. Fonash, A. Rohatgi, J. Reiger: App!. Phys. Lett. 47, 1147 (1986) 7.13 X.e. Mu, S.J. Fonash, B.Y. Yang, K. Vedum, A. Rohatgi, J. Reiger: J. App!.

Phys. 58, 4282 (1985) 7.14 J. S. Wang, S.J. Fonash, S. Ashok: IEEE Electron. Dev. Lett. EDL-4, 432 (1983) 7.15 X.C. Mu, S.J. Fonash, R. Singh: App!. Phys. Lett. 59, 67 (1986) 7.16 R.P.H. Chang, e.C. Chang, S. Durack: J. Vac. Sci. Techno!. 20, 45 (1985) 7.17 U. NiggebrUgge, M. Klug, G. Garus: GaAs. RelaLed Compounds 1985. Inst.

Phys. Conf. Ser. 79 (lOP, Bristol 1986) p.367 7.18 R. Cheung, S. Thomas, S.P. Beamont, G. Doughty, V. Law, e.D.W. Wilkinson:

Electron. Lett. 23, 857 (1987)

344

7.19 S.-M. Shin, H.-K. Chung, C.-H. Chen, K. Jan: J. App!. Phys. 62, 1729 (1987) 7.20 Y.M. Donnelly, D.L. Flamm, W.C. Dautremont-Smith, D.J. Werder: J. Appl.

Phys. 55, 242 (1984) 7.21 W.C. Dautremont-Smith: MRS Proc. 104,313 (1988) 7.22 D.M. Beyen, A.A. Lakhani: Presented at the Electrochemical Society Fall Meet-

ing, San Diego, CA (1986) 7.23 P.J. Smith, D.A. Allan: Vacuum 34, 209 (1984) 7.24 Y. Yamane, K. Yamasaki, T. Mizutani: Jpn. J. Appl. Phys. 21, L357 (1982) 7.25 P. Kwan, K.N. Bhat, J.M. Borrego, S.K. Ghandi: Solid-State Electron. 26, 125

(1983) 7.26 S.W. Pang, M.W. Geis, N.N. Efrenow, G.A. Lincoln: J. Vac. Sci. Techno!. B 3,

398 (1985) 7.27 T. Sugino, A. Boonyasirikook, J. Shirafuji, H. Hushimoto: Electr. Lett. 26, 611

(1989) 7.28 S. Martinuzzi, M.A. Sebar, J. Gervais: App!. Phys. Lett. 47, 376 (1988) 7.29 R. Singh, S.J. Fonash, A. Rohatgi, P R. Choudhury, J. Gigante: J. App!. Phys.

55, 867 (1984) 7.30 R. Singh, S. Ashok: App!. Phys. Lett. 47, 426 (1985) 7.31 J. H. Slowik, S. Ashok: App!. Phys. Lett. 49, 1784 (1986) 7.32 S. Ashok, K. Giewont: Jpn. J. App!. Phys. 24, L533 (1985) 7.33 S.J. Fonash: Solid State Techn. 28, 201 (1985) 7.34 J. Krynicki, J. C. Muller, P. Siffert, I. Brylowska, K. Paprocki: Phys. Stat. Sol.

A 100,245 (1987) 7.35 J.M. Hwang, D.K. Schroder, W.J. Biter: J. App!. Phys. 57, 5275 (1985) 7.36 J.K.G. Panitz, D.J. Sharp, C.R. Hills: J. Vac. Sci. Techn. A 23, 2716 (1985) 7.37 A. Barhdadi: Dissertation, Louis Pasteur University, Strasbourg (1985) 7.38 A.G. Foyt, W.T. Lindley, C.M. Wolfe, J.P. Donnelly: Solid State Electron. 12,

209 (1969) 7.39 H.C. Snyman, J.H. Neethling: Rad. Effect. 69, 199 (1983) 7.40 D.K. Sadana, J.M. Zavada, H.A. Jenkinson, J. Sands: App!. Phys. Lett. 47, 691

(1985) 7.41 W. Monch: Surf. Sci. 86, 672 (1979) 7.42 D.E. Eastman: J. Vac. Sci. Techn. 17,492 (1980) 7.43 D.J. Chadi: Surf. Sci. 99, 1 (1980) 7.44 D.J. Chadi: J. Phys. Soc. Jpn. Supp!. A 49, 1035 (1980) 7.45 D.J. Mi!ler, D. Haneman: Surf. Sci. 104, L237 (1980) 7.46 D. Haneman: Adv. Phys. 31, 165 (1982) 7.47 K. Fujiwara: Phys. Rev. B 24, 2240 (1981) 7.48 M.L. Kovobek, G.M. Lovriel, R.H. Stalen, C.E. Parks, B.E. Roel, Z. Hussain:

Phys. Rev. B 26, 2292 (1982) 7.49 H. Wagner, H. Ibach: Festkorperprobleme 22, 165-177 (Vieweg, Berlin 1983) 7.50 E.M. Oelig, R. Butz, H. Wagner, H. Ibach: Solid State Commun. 25, 7 (1984) 7.51 H.J. Clemens: Solid State Commun. 51, 483 (l984) 7.52 S.H. Wolff, S. Wagner, J.C. Bean, R. Hull, J. M. Gibson: App!. Phys. Lett. 55,

2017(1989) 7.53 S.N. Sahu, T-S. Shi, D.W. Ge, A. Hiraki, T. Imura, M. Tashira, V.A. Singh, J.W.

Corbett J. Chem. Phys. 21, 4330 (1982) 7.54 T.-S. Shi, S.N. Sahu, G.S. Oehrlein, A. Hiraki, J.W. Corbett: Phys. Stat. So!. A

74, 329 (1982) 7.55 T.-S. Shi, S.N. Sahu, J.W. Corbett: Surf. Sci. 130, L289 (1983) 7.56 G.S. Higashi, Y.J. Chabal, G.W. Trucks, K. Raghavchar: App!. Phys. Lett. 56,

656 (1990) 7.57 E. Yablonovitch, D.L. Allara, C.C. Chang, T. Gmitter, T.B. Bright: Phys. Rev.

Lett. 57, 249 (l986)

345

7.58 P. Freidel, S. Gourrier: App!. Phys. Lett. 42, 509 (l983) 7.59 R.P.H. Chang, S. Darak: App!. Phys. Lett. 38, 898 (1981) 7.60 R.P.H. Chang, C. C. Chang, S. Darak: J. Vac. Sci. Techn. 20, 45 (l982) 7.61 S.J. Pearton, E.E. Haller, A.G. Elliot: App!. Phys. Lett. 44, 684 (1984) 7.62 F. Capasso, G.F. Williams: J. Electrochem. Soc. 124,821 (1983) 7.63 S. Nannarone, C. Astaldi, L. Sorba, E. Colavita, C. Calandra: J. Vac. Sci. Tech-

no!. A 5, 619 (1987) 7.64 O. M'hamedi, F. Proix, C.A. Sibenne: J. Vac. Sci. Techno!. A 6, 193 (1988) 7.65 J.A. Schaefer: Surf. Sci. 178, 90 (1986) 7.66 F. Proix, O. M'hamedi, C. A. Sibenne: J. Vac. Sci. Techno!. A 6, 199 (1988) 7.67 L. Reimer: Transmission Electron Microscopy, 2nd. edn., Springer Ser. Opt. Sci.,

Vo1.36 (Springer, Berlin, Heidelberg 1989) 7.68 W.J. Kaiser, L.D. Bell, M.H. Hecht, F.J. Grunthaner: J. Vac. Sci. Techno!. A 6,

519 (1988) 7.69 J.A. Stroscio, R.M. Feenstra, A.P. Fein: Phys. Rev. Lett. 58, 1668 (l987) 7.70 A. Okubora, J. Kasahara, M. Arai, N. Watanabe: J. App!. Phys. 60, 1501 (1986) 7.71 W. Manch: In Molecular Beam Epitaxy and Heterostructures, ed. by L.L. Chang,

K. Ploog (Nijhoff, Boston 1985) p.105 7.72 C.W. Tu, R.P.H. Chang, A.R. Schlier: App!. Phys. Lett. 41,80 (1982)

Chapter 8

8.1 G.D. Watkins, J.R. Troxell, A.P. Chatterjee: In Defects alld Radiation Effects ill Semiconductors 1978 ,lnst. Phys. Conf. Ser. 46, 16 (lOP, Bristol 1979)

8.2 G.D. Watkins: In Radiation Damage in Semiconductors (Paris, Dunod 1964) p.97 8.3 G.D. Watkins: In Lattice Defects in Semiconductors 1974, Inst. Phys. Conf. Ser.

23, I (lOP, Bristol 1975) 8.4 J.C. Bourgoin, J.W.Corbett: Rad. Eff. 36, 157 (1978) 8.5 Y. Bar-Yam, J.D. Joannopoulos: In Proc. 17th Int'! Coni. Physics of Semicon

ductors 1984, ed. by D.J. Chadi, W. A. Harrison (Springer, New York 1985) p.721

8.6 R. Car, P.J. Kelly, A. Oshiyama, S.T. Pantelides: In Proc. 17th In(l Coni. Physics 01 Semiconductors 1984, ed. by D.J. Chadi, W.A. Harrison (Springer, New York 1985) p.713

8.7 G.D. Watkins, A.P. Chatterjee, R. D. Harris, J.R. Troxell: Semiconductors, Insu-lators 5, 321 (1983)

8.8 G.D. Watkins, J.R. Troxell: Phys. Rev. Lett. 44, 593 (1980) 8.9 G.A. Baraff, E.O. Kane, M. Schluter: Phys. Rev. B 21,5662 (l980) 8.10 G.D. Watkins: In Radiation Effects in Semiconductors, ed. by F.L. Vook

(Plenum, New York 1968) p.67 8.11 H. J. Stein: Rad. Eff. 9, 195 (1971) 8.12 B. Bech-Nielsen: Dissertation. University of Aarhus (1987) 8.13 G.D. Watkins: J. Phys. Soc. Jpn. 18, Supp!. II, 22 (1963) 8.14 J.W. Corbett, J.P. Karins, T.Y. Tan: Nuc!. Instr. Meth. 182/183,457 (1981) 8.15 J.W. Corbett, G.D. Watkins: Phys. Rev. Lett. 7, 314(1961) 8.16 L. C. Kimerling: In Radiation Elfects ill Semiconductors 1976, lnst. Phys. Conf.

Ser. 31,221 (lOP, Bristol 1977) 8.17 L.J. Cheng, J.C. Corelli, J.W. Corbett, G.D. Watkins: Phys. Rev. 152,761 (1966) 8.18 B.N. Mukashev, K.H. Nussupov, M.F. Tamendarov: Phys. Stat. So!. B 96, KI7

(1979) 8.19 S.l. Tan, B.S. Berry, W.F.J. Frank: In Ion Implantation in Semiconductors, Other

Materials, ed. by B.L. Crowder (Plenum, New York 1974) p.19

346

8.20 G.G. Qin, Zh.L. Hua: Solid State Commun. 53, 975(1985) 8.21 B.N. Mukashev, M.F. Tamendarov, S. Zhtakmoldin, V.V. Frolov: Phys. Stat. Sol.

A 91, 509 (1985) 8.22 L.C. Kimerling, P. Blood, W.M. Gibson: In Defects and Radiation Effects in

Semiconductors 1978, Inst. Phys. Conf. Ser. 46, 273 (lOP, Bristol 1979) 8.23 K. Irmscher, H. Klose, K. Maass: J. Phys. C 17, 6317 (1984) 8.24 J. Tatarkiewicz, A. Krol: Phys. Rev. B. 32, 8401 (1985) 8.25 B.G. Svensson, A. Hallen, B.U.R. Sundquist: Mat. Sci. Eng. B 4, 285 (1989) 8.26 J. Hartung, J. Weber: Mat. Sci. Eng. B 4, 47 (1989) 8.27 Y.H. Lee, Y.M. Kim, J.W. Corbett: Rad. Eff. 15, 77 (1972) 8.28 K.L. Brower: In Ion Implantatioll ill Semiconductors, ed. by F.Chernov, J.A.

Borders, D.K. Brice (Plenum, New York 1976) p.427 8.29 D.J. Hughes, R.B. Schwartz: Neutron Cross Sections (Ass. Universities Inc., New

York 1958) p.l21 8.30 Y.H. Lee, J.W. Corbett: Phys. Rev. B 9, 4351 (1974) 8.31 K.L. Brower: Rad. Eff. 8, 213 (1971) 8.32 Y.H. Lee, N.N. Gerasimenko, J.W. Corbett: Phys. Rev. B 14,4506 (1976) 8.33 K.L. Brower: Phys. Rev. B 4,872 (1976) 8.34 Y. Du, Y. Zhang, G. Qin, X. Meng: Chinese Phys. 5, 21 (1985) 8.35 P. Danesh, S. Kaschieva, A. Djakor: Solid State Electron. 28, 1095 (1985) 8.36 Y. Ohmura, Y. Hohta, M. KanaQana: Solid State Commun. 211, 263 (1972) 8.37 Y. Ohmura, Y. Zohta, M. Kanagawa: Phys. Stat. Sol. A 15,93 (1973) 8.38 Y.V. Gorelkinskii, V.O. Sigle, Z.S. Takivuev: Phys. Stat. Sol. A 22, K55 (1974) 8.39 V.I. Obodrikov, L.N. Safronov, L.S. Smirnov: SOY. Phys. Semicond. 10, 814

(1976) 8.40 G.H. Schwuttke: In Ion Implalltatioll, ed. by F.H. Eisen, L.T. Chadderton

(Gordon and Breach, London 1971) p.139 8.41 S.R. Wilson, W.M. Paulsen, W.F. Krokikowski, D. Fathy, J.D. Gresset, A.H.

Hamdi, F.D. McDaniel: MRS Proc. 27, 287 (1984) 8.42 Y.V. Gore1kinskii, N.N. Nevinnyi: Nucl.Instr. Meth. 209/210, 677 (1983) 8.43 L.C. Kimerling, J.M. Poate: Lattice Defects in Semiconductors 1974, Inst. Phys.

Conf. Ser. 23, 126 (lOP, Bristol 1974) 8.44 T.S. Shi, S.N. Sahu, G.S. Oehrlein, A. Hiraki, J.W. Corbett: Phys. Stat. Sol. A 74,

329 (1982) 8.45 R.J. Pflueger, J.C. Corelli, J.W. Corbett: Phys.Stat. Solidi. A 1, K49 (1985) 8.46 A.S. Oates, M.J. Binns, R.C. Newman, J.H. Tucker, J.G. Wilkes, A. Wilkinson:

J. Phys. C 17,5695 (1984) 8.47 Z.-Y. Wang, L.-Y. Lin: In Neutron Transmutation Doping of Semiconductor

Materials, ed. by R. D. Carrabee (Plenum, New York 1984) p.311 8.48 C.-G.Lu, Y.-X. Li, C.-T. Sun, T.-H. Yin: In Neutron Transmutation Doping of

Semiconductor Materials, ed. by R.D. Carrabee (Plenum, New York 1984) 8.49 B.N. Mukashev, K.H. Nussupov, M.F. Tamendarov: Fez. Tekb. Poluprov 15,

2089 (1981) 8.50 B.N. Mukashev, K.H. Nussuprov, M.F. Tamendarov, S.S. Chasnikova: Fit. Tekh.

Poluprov. 14, 1797 (1980) 8.51 Y.C. Du, Y.F. Zhang, X.T. Yeng: Semicond. Proc. ASTM, STP-850, ed. by D.C.

Gupta (ASTM, New York 1984) p.566 8.52 W.L. Hansen, E.E. Haller, P.N. Lake: IEEE Trans N-29, 738 (1982) 8.53 E.E. Haller, W.L. Hansen, F.S. Goulding: Adv. Phys. 30, 93 (1981) 8.54 E.E. Haller: MRS Proc. 46, 495 (1985); Festkorperprobleme 26, 203 (Vieweg,

Braunschweig 1986) 8.55 E.E. Haller, L.M. Falicov: In 3rd Brazilian School of Semicond Phys., ed. by

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347

8.56 J.M. Kahn, L.M. Falicov, E.E. Haller: Phys. Rev. Lett. 57, 2077 (1986)

8.57 J.M. Kahn, R.E.McMurray, Jr., E.E.Haller, L.M.Falicov: Phys. Rev. B 36, 8001 (1987)

8.58 Sh.M. Kogan: Sov. Phys. Semicon. 1,828 (1983) 8.59 R.J. Bell: Introductory Fourier Tralls/orm Spectroscopy (Academic, New York

1972) 8.60 L.M. Falicov: E.E. Haller: Solid State Commun. 53, 1121(1985) 8.61 K. Muro, A.J. Sievers: Phys. Rev. Lett. 57, 87 (1986) 8.62 K.L. Lewis, G.S. Arthur, S.A. Bangard: J. Cryst.Growth 66, 125 (1984) 8.63 M.H. Brodsky, M. Cardona, J.J. Cuomo: Phys. Rev. B 16,3556(1977) 8.64 G. Lucovsky, R.J. Nemanich, J.C. Knights: Phys. Rev. B 19,2064 (1979) 8.65 S.T. Picraux, F.L. Vook, H.J. Stein: Insl. Phys. COIl/. Ser. 46, 31 (lOP, Bristol

1979) 8.66 R.J. Stein: Phys. Rev. Lett. 43, 1030 (1979) 8.67 J.W. Corbett, J.C. Corelli, V. Desnica, L.C. Snyder: MRS Proc. 46, 243 (1985) '8.68 R. Kleinhenz, Y.-H. Lee, V.A. Singh, P.M. Mooney, A. Jaworowski, L.M. Roth,

J.C. Corelli, J.W. Corbett: Insl. Phys. Coni. Ser. 46, 200 (lOP, Bristol 1979) 8.69 G.D. Watkins, J.W. Corbett: Phys. Rev. 138,543 (1965) 8.70 Cui Shu-fan, Ge Pei-wen, Zhao Ya-gin, Wu Lan-Sheng: Acta Phys. Sinica 28,

791 (1979) (in Chinese) 8.71 Cui Shu-fan, Mai Zhen-Wong, Ge Pei-wen, ShengDe-yan: Kexue Tongbao 27,

382 (1982) 8.72 G.R. Bai, M.W. Qi, L.M. Xie, T.S. Shi: Solid State Commun. 56, 277 (1985) 8.73 T.S. Shi, L.M. Xie, G.R. Bai, M.W. Qi: Phys. Stat. Sol. B 131,511 (1985) 8.74 M.W. Qi, G.R. Bai, T.S. Shi, L.M. Xie: Mater. Lett. 3,467 (1985) 8.75 H.J. Stein: J. Electron. Mater. 4, 159 (1975) 8.76 N.N. Gerasimenko,.M. Rolle, L.-J. Cheng, Y.H. Lee, J.C. Corelli, J.W. Corbett:

Phys. Stat. Sol. B 90, 689 (1978) 8.77 B.N. Mukashev, K.N. Nussuprov, M.F. Tamendarov: Phys. Lett. A 72, 381

(1979) 8.78 B.N. Mukashev, K.N. Nussoprov, M.F. Tamendarov, V.V. Frolow: Phys. Lett. A

87,376 (1982) 8.79 J. Tatarkiewicz, K. Wieteska: Phys. Stat. Sol. A 66, KIOI(198I) 8.80 Zhang Zhen-nan, Xu Xhen-jia: Acta Physica Sinica 1, 994 (1982) (in Chinese) 8.81 Zhang Ya-feng, Du Yong-chang, Weng Shi-fu, Meng Xiang-ti, Zhang Bing-

zhong: Acta Physica Sinica 34, 849 (1985) (in Chinese) 8.82 M.W. Qi, T.S. Shi (unpublished) 8.83 T.S. Shi, G.R. Bai, M.W. Qi, J.K. Zhan: Proc. 14th Int'! Conf. Defects in Semi

condo Mat. Sci. Forum 10-12, 597 (1986) 8.84 Du Yong-chang, Zhan Yu-feng, Meng Xiang-ti, Sheng Hong: Scientica Sinica

(to be published) 8.85 V.A. Singh, C. Weigel, J.W. Corbett, L.M. Roth: Phys. Stat. Sol. B 81, 637

(1977) 8.86 G. Lucovsky: Solid State Commun. 29, 571 (1979) 8.87 H. Shanks, C.J. Fang, L. Ley, M. Cardona, F.J. Demond, S. Kalbitzer: Phys.

Stat. Sol. B 100, 43(1980) 8.88 M. Cardona: Phys. Stat. Sol. B 118,463 (1983) 8.89 H. Wagner, W. Beyer: Solid State Commun. 48, 585(1983) 8.90 Cui Shu-fan, Mai Zhen-heng, Isien Ling-chao: Scientia Sinica A 27, 213 (1984) 8.91 Ga Ben-yuan, Xu Zheng-yi, Ge Pien-wen: Scientia Sinica A 28, 740 (1985) 8.92 G.R. Bai. Unpublished 8.93 B. Bech Nielsen, J. Olajos, H.G. Grimmeiss: Phys. Rev. B 39, 3330 (1989)

348

Chapter 9

9.1 See, for example, Y. Fukai, H. Sugimoto: Adv. Phys. 34, 263 (1985) and references therein

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T. Suzuki: Bulletin Jpn. Inst. Metals 24, 365 (1985) 9.6 A.G.M. McCracken, P.E. Stott, Nuclear Fusion 19,889 (1979) 9.7 K.L. Wilson, J. Nuc!. Mater. 103/104,493 (1981) 9.8 F. Waelbroeck, I. Ali Kahn, K.J. Dietz, P. Wienhold: J. Physique C 7, 313

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Materials, ed. by M.Stavola, S.J. Pearton, G. Davies (MRS, Pittsburgh 1988) pp.229-239

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(l989) 9.43 T. Zundel, A. Mesli, J.C. Muller, P. Siffert: Appl. Phys. A 48, 31 (1989) 9.44 A.E. Jaworowski, L.S. Wielunski, G. Bambakidis: MRS Proc. 59, 501 (l986) 9.45 S.C.S. Pan, C.T. Sah: J. Appl. Phys. 60, 156 (1986) 9.46 C.T. Sah, S.C.S. Pan, C.C.H Hsu: J. Appl. Phys. 57, 5148 (1985) 9.47 T. Zundel, J. Weber, B. Benson, P.O. Hahn, A. Schnegg, H. Prigge: Appl. Phys.

Lett. 53, 1426 (1988) 9.48 S.J. Pearton, A.J. Tavendale, A.A. Williams, D. Alexiev: In Semiconductor Sili

con, ed. by H.R. Huff (Electrochem. Soc., Pennington, NJ 1986) p.826 9.49 J. Reichel, S. Sevcik: Phys. Stat. Solidi A 103,413 (1987) 9.50 Th. Wichert, M. Deicher, G. GrUbel, R. Keller, N. Schulz, H. Skudlik: Appl.

Phys. A 48, 59-85 (1989) J. Hage, H. Prigge, P. Wagner: Appl. Phys. A 50, 241 (1990) Th. Prescha, T. Zundel, J. Weber, H. Prigge, P. Gerlach: Mat. Sci. Eng. B 4, 79 (1989)

9.51 J.W. Corbett et. al. (unpublished) 9.52 A.J. Tavendale, D. Alexiev, A.A. Williams: Appl. Phys. Lett. 46, 317 (1985) 9.53 A.J. Tavendale, A.A. Williams, D. Alexiev, S.J. Pearton: MRS Proc. 59, 469

(1986) 9.54 N.M. Johnson, C. Herring: Phys. Rev. B. 38, 1581 (1988) 9.55 N.M. Johnson, C. Herring: Proc. 15th Int'l Conf. Defects in Semiconductors

(1989) p.961 9.56 N.M. Johnson, C .. Herring: Proc. 3rd Int'l Conf. Shallow Impurity Semiconduc

tors (1989) 9.57 C.H. Seager, R.A. Anderson, D.K. Brice: J. Appl. Phys. 68, 3268 (1990) 9.58 P. Deal<:, L.L. Snyder, J.L. Lindstrom, J.W. Corbett, S.J. Pearton, A. J. Taven

dale: Phys. Lett. A 126,427 (1988) 9.59 A. Amore Bonapasta, A. Lapiccirella, N. Tomassini, M. Capizzi: Europhys. Lett.

7, 145 (1988) 9.60 M. Capizzi, A. Mittiga: Physica B 146, 19 (1987) 9.61 C. Pennetta: Solid State Commun. 69, 305 (1989) 9.62 C.G. Van der Walle, P.J.H. Denteneer, Y. Bar-Yam, S.T. Pantelides: Phys. Rev.

B 39, 10791 (l989) 9.63 G.G. DeLeo, W.B. Fowler: In Hydrogen in Semiconductors, ed. by J.I. Pankove,

N.M. Johnson (Academic, New York 1990) 9.64 S. Estreicher: Phys. Rev. B 36, 9122 (1987) 9.65 S.T. Pantelides: Appl. Phys. Lett. 50, 995 (1987) 9.66 M. Capizzi, A. Mittiga: Appl. Phys. Lett. 5,918 (1987) 9.67 P. Deak, L.C. Snyder, J.W. Corbett: Phys. Rev. B 37, 6887 (1988) 9.68 G.G. DeLeo, M.J. Dorogi, W.B. Fowler: Phys. Rev. B 38,7520 (1988) 9.69 C.G. Van de Walle, Y. Ban-Yam, S.T. Pantelides: Phys. Rev. Lett. 60, 2761

(1988) 9.70 T.S. Shi, S.N. Sahu, J.W. Corbett, L.C. Snyder: Scientica Sinica 27,98 (1984) 9.71 K.J. Chang, D.J. Chadi: Phys. Rev. Lett. 60, 1422 (1988) 9.72 R.N. Hall: In 13th Tnt'l Con/. De/ects in Semicond., ed. by L.C. Kimerling, J.M.

Parsey, Jr. (Metallurgical Society, Warrendale, PA 1985) Vol.l49, p.759 9.73 A. McNabb, P.K. Foster: Trans lAME 227, 619 (1963)

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Amorphous Solids, ed. by G. Bambakidis, R.C. Bowman, Jr. (Plenum, New York 1986) p.61

9.77 A.V. Dvurechenskii, I.A. Ryantsev, L.S. Smirnov: Sov. Phys. Semicond. 16, 400 (1982)

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J.M. Parsey, Jr. (Metallurgical Soc., AIME, Warrendale, PA 1985) VoI.l4A, p.737

9.83 D. Mathiot: Phys. Rev. B 40, 5867 (1989) 9.84 F. Buda, G.L. Chiarotti, R. Car, M. Parinello: Phys.Rev. Lett. 63, 294 (1989) 9.85 L.L. Kazmerski: J. Vac. Sci. Techno\. A 23, 1287 (1985) 9.86 S.J. Pearton: MRS Proc. 59, 457 (1986) 9.87 A. Mogro-Compero, R.P. Love, R. Schubert: J. Electrochem. Soc. 132, 2006

(1985) 9.88 C.H. Seager, D.S. Ginley: App\. Phys. Lett. 34, 337 (1979) 9.89 L.L. Kazmerski: 18th IEEE Photovoltaic Specialist Conf., Las Vegas, NV (1985)

p.993 9.90 J.I. Hanoka: In Hydrogen ill Disordered and Amorphous Solids, NATO Ser. B

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App\. Phys. 59, 2821 (1985) 9.109 S.J. Pearton, W.e. Dautremont-Smith, J. Lopata, C.W. Tu, C.R. Abernathy:

Phys. Rev. B 36, 4260 (1987) 9.110 N.M. Johnnson, R.D. Burnham, R.A. Street, R.L. Thornton: Phys. Rev. B 33,

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351

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9.114 R.A. Morrow: J. App!. Phys. 66, 249 (1989) 9.115 L. Svob, G. Graffepain, Y. Marfaing: App\. Phys. A 47, 309 (1988) 9.116 L. Svob, A. Heurtel, Y. Marfaing, J. Cryst. Growth 86, 815 (1988) 9.117 J.M. Zavada, R.G. Wilson, S.W. Novak, A.R. Van Neida, S.J. Pearton: MRS

Proc. 104,331 (1988) 9.118 J.M. Zavada, R.G. Wilson, S.W. Novak, S.J. Pearton, A.R. Von Neida: MR Proc.

144, 457 (1989) 9.119 J.M. Zavada, R.G. Wilson, S.W. Novak, S.J. Pearton: Unpublished

Chapter 10

10.1 J.W. Corbett: Electron Radiation Damage in Semiconductors and Metals (Academic, New York 1966)

10.2 G.D. Watkins: In Point Defects in Solids, ed. by J.H. Crawford Jr., L.M. Sliflon (Plenum, New York 1975) Vo!.2, pp.333-392

10.3 J.W. Corbett, R.L. Kleinhenz, N.D. Wilsey: In Defects in Semiconductors, ed. by J. Narayan, T.-Y. Tan (North-HoJland, New York 1981) pp.I-20

lOA J.W. Corbett, R.L. Kleinhenz, E. Wu, Z.-P. You: In Neutron Irradiation Effects in Solids, ed. by M.A. Kirk (North-HoJland, New York 1982) pp.617-626

10.5 J.W. Corbett, R.L. Kleinhenz, Z.-P. You: In Defect Complexes in Semiconductors, ed. by J. Gliber, F. Beleznay, I. C. Sze'p, J. Laszlo (Springer, Berlin, Heidelberg 1983) pp.11-49

10.6 L.M. Roth: Unpublished 10.7 L.M. Roth: Phys. Rev. 118, 1534 (1950) 10.8 Y. Yafet: In Solid State Physics 14, 1 (Academic, New York 1963) 10.9 L. Liu: Phys. Rev. Lett. 6, 683 (1961) 10.10 L. Liu: Phys. Rev. 126, 1317 (1962) 10.11 G.D. Watkins, J.W. Corbett: Phys. Rev. 121, 1001 (1961) 10.12 G.D. Watkins, J.W. Corbett: Phys. Rev. A 134, 1359 (1964) 10.13 O.F. Schirmer, M. Scheffler: J. Phys. CIS, L645 (1982) 10.14 Yu.V. Gorelkinskii, N.N. Nevinnyi: Pis'ma Zh. Tekh. Fiz. B 13, 105 (1987) 10.15 V.A. Gordeev, Yu.V. Gorelkinskii, R.F. Konopleva, N.N. Nevinnyi, Yu.V.

Obukhov, V.G. Firsov: Preprint 1340, Institute of Nuclear Physics, Leningrad (November 1987)

10.16 Yu.V. Gorelkinskii: Private communication 10.17 A. VanWieringen, N. Warmoltz: Physica B 22, 849-865 (1956) 10.18 S.J. Cox: J. Phys. C 20,3187 (1987) 10.19 B.D. Patterson: In Relative Channeling, ed. by R.A. Carrigan Jr., J.A. Ellison

(Plenum, New York 1987) ppA59-477 10.20 B.D. Patterson: Rev. Mod. Phys. 60, 69-159 (1988) 10.21 R.F. Kieft, M. Celio, T.L. Estle, G.M. Luke, S.R. Kreitzman, J.H. Brewer, D.R.

Noakes, E.J. Ensaldo, K. Nishiyama: Phys. Rev. Lett. 58, 1780 (1987) 10.22 R.F. Kieft, M. Celio, T.L. Estle, S.R. Kreitzman, G.M. Luke, T.M. Riseman,

E.J. Ensaldo: Phys. Rev. Lett. 60, 224 (1988) 10.23 T.L. Estle, S. Estreicher, D.S. Marynick: Phys. Rev. Lett. 58, 1547 (1987) 10.24 S.J.F. Cox, M.C.R. Symons: Chern. Phys. Lett. 12,516 (1986) 10.25 T.P. Das, N. Sahoo: Private communication 10.26 Table of Isotopes, ed. by C.M. Lederer, V.S. Shirley (Wiley, New York 1978)

p.521

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10.28 C.P. Slichter: Principles of Magnetic Resonance, 3rd edn., Springer Ser. SolidState Sci., Vol.I (Springer, Berlin, Heidelberg 1990) Chap.9

10.29 Th. Wichert, M. Deicher, G. GrUbel, R. Keller, N. Schulz, H. Skudlik: Appl. Phys. A 48,59-85 (1989)

10.30 See the discussion in the paper by G.D. Watkins, J.W. Corbett: Phys. Rev. 121, 1001-1014 (1961)

10.31 E.N. Kaufmann, R. Kalish, R.A. Naumann, S. Lis: J. Appl. Phys. 48, 3332 (1977)

10.32 H.J. Leisi: Phys. Rev. A 31, 1662 (1970) 10.33 C.S. Fuller, J.A. Ditzenberg: J. Appl. Phys. 27, 544 (1956) 10.34 A. Seeger, K.P. Chik: Phys. Stat. Sol. 29, 455 (1968) 10.35 Th. Wichert, H. Skudlik, M. Deicher, G. GrUbel, R. Keller, E. Rechnagel, L.

Song: Phys. Rev. Lett. 59, 2087 (1987) 10.36 A. Baurichter, S. Deubel, D. Forkel, M. Uhrbacher, H. Wolf, W. Witthuhn: Proc.

3rd Conf. 011 Shallow Impurities ill Semiconductors, Linkoping, Sweden 1988, Inst. Phys. Conf. Ser. 95, 471 (1989)

10.37 Th. Wichert: Private communication 10.38 M. Deicher, G. GrUbel, R. Keller, E. Recknagel, N. Schulz, H. Skudlik, Th.

Wichert: Proc. ICDS-15, Budapest (1988) pp.l045-1050 10.39 M. Deicher, G. GrUbel, R. Keller, E. Recknagel, N. Schulz, H. Skudlik, Th.

Wichert, H. Prigge, A. Schnegg: In Proc. 3rd COllf. 011 Shallow Impurities in Semicollductors, Linkoping, Sweden 1988, Inst. Phys. Conf. Ser. 95, 155 (1988)

10.40 A. Schnegg, H. Prigge, M. Grunder, P. Hahn, H. Jacob: In Defects in Electronic Materials, ed. by M. Stavola, S.J. Pearton, G. Davies (Mat. Res. Soc., Pittsburgh, PA 1988) p.291

10041 J. Reichel, S. Sevick: Phys. Stat. Sol. (a) 103,413 (1987) 10042 Th. Wichert: Private communication 10043 C.E. Jones, G.E. Johnson: J. Appl. Phys. 52, 1082 (1981) 10.44 R. Baron, J.P. Backus, S.D. Allen, T.C. McGill, M.H. Young, H. Kimura, H.V.

Winston, O.J. Marsh: Appl. Phys. Lett. 34, 257 (1979) 10045 M. Cardona, S.C. Shen, S.P. Varma: Phys. Rev. B 23,5329 (1981) 10046 G.D. Watkins, F.S. Ham: Phys. Rev. B 31, 4071 (1970) 10047 R. Keller, M. Deicher, W. Pfeiffer, H. Skudik, D. Steiner, Th. Wichert: Phys.

Rev. Lett. 65, 2023 (1990) 10048 M. Gebbard, N. Achtziger, A. Baurichter, D. Forkel, B. Vogt, W. Witthuhn:

Proc. 6th Trieste Semiconductor Symp., Physica B 170,320 (1991) 10049 M.L. Swanson, Th. Wichert, A.F. Quenneville: Appl. Phys. Lett. 49, 265-267

(1986) 10.50 Th. Wichert, M.L. Swanson, A.F. Quenneville: Phys. Rev. Lett. 57, 1757-1760

(1986) 10.51 D. Forkel, H. Fottinger, M. Iwatschenko-Borho, F. Meyer, W. Witthuhn, H.

Wolf: In Microscopic Identification of Electronic Defects in Semiconductors, ed. by N.M. Johnson, S.G. Bishop, G.D. Watkins (Mat. Res. Soc., Pittsburgh, PA 1985) pA81

10.52 D. Forkel, H. Fottinger, M. Iwatschenko-Borho, S. Malzer, F. Meyer, W. Witthuhn, H. Wolf: In Defects in Semiconductors, ed. by H.J. von Bardeleben (Trans Tech., Aedermannsdorf 1986) p.557

10.53 S. Deubler, N. Achtziger, P. Dohlus, D. Forkel, H. Wolf, W. Witthuhn: In Proc. Itlt'l Conf. Shallow Impurities in Semiconductors, Linkoping 1988, Inst. Phys. Conf. Ser. 95,303 (1988)

353

10.54 D. Forkel, W. Engel, M. Iwatschenko-Borho, R. Keitel, W. Witthuhn: Hyperfine Int. 15/16,59 (1989) N. Achtziger, S. Deubler, D. Fockel, H. Wolf, W. Witthuhn: Appl. Phys. Lett. 55, 766 (1989)

10.55 M. Deicher, G. GrUbel, E. Recknagel, Th. Wichert: In Defects in Semiconductors, ed. by J.J. von Bardeleben (Trans Tech., Aedermannsdorf 1986) p.ll41

10.56 M. Deicher, G. GrUbel, E. Recknagel, H. Skudlik, Th. Wichert: Hyperfine Int. 35,719 (1987)

10.57 D. Forkel, F. Meyer, W. Witthuhn, H. Wolf. In Proc. 7th Int'l Conf. on Hyperfine Interactions, Bangalore, India (1986)

10.58 W. Witthuhn: Hyperfine Interactions 24-26,547 (1985) 10.59 H. Wolf, S. Deubler, D. Forkel, H. FOttinger, M. Iwatschenko-Borho, F. Meyer,

M. Renn, W. Witthuhn: In Defects in Semiconductors, ed. by H.J. von Bardeleben (Trans Tech, Aedermannsdorf 1986) p.363

10.60 W. Hartree, D.R. Hartree, M.F. Manning: Phys. Rev. 60, 837 (1941) 10.61 H.L. Donley: Phys. Rev. 50, 1012 (1936) 10.62 L. Biermann, K. LUbeck: Z. Astrophys. 25, 325 (1948) 10.63 R.G. Barnes, W.V. Smith: Phys. Rev. 93, 95 (1954) 10.64 G.D Watkins, J.W. Corbett: Phys. Rev. 121, 1001 (1961)

Chapter II

11.1 S.J. Pearton, A.J. Tavendale, A.A. Williams, D. Alexiev: In Semiconductor Sili-con, ed. by H.R. Huff (Electrochem. Soc., Pennington, NJ 1986) p.826.

11.2 S.J. Pearton, J.W. Corbett, T.S. Shi: Appl. Phys. A 43, 153 (1987) 11.3 C.H. Seager, R.A. Anderson, J.K.G. Panitz: J. Mater. Res. 2, 96 (1987) 11.4 M. Grunder, H. Jacob: Appl. Phys. A 39, 3206 (1986) 11.5 A. Schnegg, M. Grunder, H. Jacob: In Semiconductor Silicon 1986, ed. by H.R.

Huff (Electrochem. Soc., Pennington, NJ 1986) p.198. 11.6 A.J. Tavendale, A.A. Williams, S.J. Pearton: Appl. Phys. Lett. 48, 590 (1986) 11.7 A.J. Tavendale, A.A. Williams, D. Alexiev: Appl. Phys. Lett. 47, 317 (1985) 11.8 G.J.A. HeIlings, A. Straager, A.H.M. Kipperman: J. Appl. Phys. 45, 420 (1985) 11.9 C.T. Sah, J.Y.C. Sun, J.J.T. Tzou: Appl. Phys. Lett. 43, 204 (1983) 11.10 C.T. Sah, J.Y.C. Sun, J.J.T. Tzou: J. Appl. Phys. 54, 4378 (1983) 11.11 C.T. Sah, J.Y.C. Sun, J.J.T. Tzou, S.C.S. Pan: Appl. Phys. Lett. 43, 962 (1983) 11.12 R. Gale, F.J. Feigel, C.W. Magee, D.R. Young: J. Appl. Phys. 54, 6438 (1983) 11.13 W.G. Meyer, R.B. Fair: IEEE Trans. ED-30, 96 (1983) 11.14 G.S. Oehrlein, R.M. Tromp, Y.H. Lee, E.J. Petrillo: Appl. Phys. Lett. 45, 420

(1984) 11.15 E.H. NicoIlian, C.N. Berghend, P.F. Schmidt, J.M. Andrews: J. Appl. Phys. 45,

5654 (1971) 11.16 W.C. Dautremont-Smith: MRS Proc. 104,313 (1988) 11.17 S.S. Cohen: J. Appl. Phys. 59, 2073 (1986) 11.18 C.W. Magee, J.A. Cohen, D.E. Brice, D.K. Brice: Nuc\. Instr. Meth. 168, 383

(1980) 11.19 A.E. Jaworowski, L.S. Wielunski, T.W. Lisherman: MRS Proc. 46, 561 (1985) 11.20 A.J. Tavendale, A.A. Williams, D. Alexiev, S.J. Pearton: MRS Proc. 59, 469

(1986) 11.21 T. Zundel, E. Courcelle, A. Mesli, J.C. Muller, P. Siffert: Appl. Phys. A 40, 67

(1986) 11.22 A.J. Tavendale, A.A. Williams, S.J. Pearton: MRS Proc. 104, 285 (1988) 11.23 M.V. Smoluchowski: Phys. Z. 17,557 (916) 11.24 M. Capizzi, A. Mittiga: Appl. Phys. Lett. 50, 918 (1987)

354

11.25 A. Van Wieringen, N. Warmoltz: Physica 22,849 (1956) 11.26 X.C. Mu, S.J. Fonash, R. Singh: App\. Phys. Lett. 49, 67 (1986) 11.27 S. Ashok, K. Giewant: Jpn. J. App\. Phys. 24, C533 (1985) 11.28 R. Pinto, R.S. Baba: App!. Phys. Lett. 48, 1427 (1986) 11.29 C.H. Seager, R.A. Anderson: App!. Phys. Lett. 53,1181 (1988) 11.30 F.G. Vieweg-Gubberlet, P.F. Siegesleitner: J. Electrochem. Soc. 126, 1793

(1979) 11.31 A. Schnegg, H. Prigge, M. Grunder, P.O. Hahn, H. Jacob: MRS Proc. 104, 291

(1988) 11.32 P.O. Hahn: In Thin Solid Films - Inter/aces. Phenomena, ed. by R.J. Nemanich,

P.S. Ho: MRS Proc. 54, 645 (1986) 11.33 T. Zundel, J. Weber, B. Benson, P.O. Hahn, A. Schnegg, H. Prigge: App!. Phys.

Lett. 53, 1426 (1988) 11.34 T. Zundel, J. Weber, P.O. Hahn, A. Schnegg, H. Prigge: Proc. 15th Inti Coni.

De/ects in Semicond., Mat. Sci. Forum 38-41 (1989) 11.35 J. Reichel, S. Sevcik: Phys. Stat. So!. A 103, 413 (1987) i 1.36 M. Deicher, G. Grubel, R. Keller, E. Rechnagel, N. Schultz, H. Skudlik, Th.

Wichert, H. Prigge, A. Schegg: 3rd Int'! Coni. Shallow Imp in Semicond., loP ConI'; Ser. 95, 155 (1989)

11.37 Th. Wichert, M. Deicher, G. GrUbel, R. Keller, N. Schulz, H. Skudlik: App!. Phys. A. 48, 59 (1989)

11.38 Th. Prescha, T. Zundel, J. Weber, H. Prigge, P. Gerlach: Mat. Sci. Eng. B 4, 79 (1989)

11.39 Th. Wichert, R. Keller, M. Deicher, W. Pfeiffer, D. Steiner, H. Skudlik: App!. Phys. A 48, 59 (1989)

11.40 H. Prigge, P. Gerlach, P.O. Hahn, A. Schnegg: Proc. Electrochem. Soc. 89, 372 (1989)

ll.41 S. Estreicher: Phys. Rev. B. 41, 9886 (1990) 11.42 W. Przyborski, J. Roed, J. Lippert, L. Sarholb-Kristensen: Rad. Eff. 1, 33

(1969) 11.43 J. Chevallier, M. Aucouturier: Ann. Rev. Mater. Sci. 18,219 (1988) 11.44 A. Barhdadi: Dissertation, Louis Pasteur University, Strasbourg (1985) 11.45 K. Irmscher, H. Klose, K. Maass: J. Phys. C 17,6317 (1984) 11.46 A. Mogro-Campero, M.F. Chang, J.L. Benjamin: J. Electrochem. Soc. 135, 172

(1988) 11.47 W. Wondrak, D. Silker: Physica B 129,322 (1985) 11.48 A. Mogro-Campero, R.P. Love: J. Electrochem. Soc. 131,2679 (1984) 11.49 D.C. Sawko, J. Barbko: IEEE Trans. NS-30, 1756 (1983) 11.50 D. Silka, W.D. Nowak, W. Wondrak, B. Thomas, H. Berg: IEEE Int'I Electron

Device Meeting Tech. Dig. 162 (1985) 11.51 A. Mogro-Campero, R.P. Love, M.F. Chang, R.F. Dyer: IEEE EDL-6, 224

(1985) 11.52 A. Mogro-Campero, R.P. Love, M.P. Chang, R.P. Dyer: IEEE ED-33, 1667

(1986) 11.53 A. Mogro-Campero, R.P. Love, M.F. Chang, R.F. Dyer: Solid State Electron.

30, 185 (1987) 11.54 A. Chantre, L. Bouchet, E. Andre: J. Electrochem. Soc. 135,2867 (1988) 11.55 O. Ji, T. Shi, P. Wang: Nuc!. Instr. Meth. Phys. Res. B12, 486 (1985) 11.56 A.E. Jaworowski, L.S. Wielunski, T.W. Listerman: MRS Proc. 46, 561 (1985) 11.57 J. Lundstrom: Sensors, Actuators 1,403 (1981) 11.58 G.J. Maclay: IEEE Trans. EDL-8, 413 (1987) 11.59 B. Kermati, J. Zemel: J. App!. Phys. 53, 1091 (1982) 11.60 M.C. Petty: Solid State Electronics 29,89 (1986)

355

11.61 A. Spetz, M. Armgarth, I. Lundstrom: J. App!. Phys. 64, 274 (1988) 11.62 B. Clerjaud, D. Cote, C. Naud: Phys. Rev. Lett. 58, 1755 (1987) 11.63 J. Shinar, A. Kana-ah, B. C. Cavenett, T. A. Kennedy, N. Wilsey: Solid State

Commun. 59, 653 (1986) 11.64 B. Clerjaud, D. Cote, M. Krause, C. Naud: MRS Proc. 104,341 (1988) 11.65 G.R. Antell, A.T.R. Briggs, B.R. Butler, S.A. Kitching, J.P. Stagg, A Chen., D.

E. Sykes: App!. Phys. Lett. 53, 758 (1988) 11.66 B. Hughes: Inst. Phys. Conf. Ser. 65, 57 (1982) 11.67 F.D. Auret, A.W.R. Leitch, J.S. Yermak: J. App!. Phys. 59, 158 (1986) 11.68 J. Lagowski, M. Kaminska, J.M. Parsey, Jr., H.C. Gatos, M. Lichhengheiger:

Appl. Phys. Lett. 41, 1078 (1982) 11.69 L. Svob, G. Grattepain, Y. Marfaing: App!. Phys. A 47, 309 (1988) II. 70 M. Matsui, T. Kazuno: App!. Phys. Lett. 51, 659 (1987) 11.71 H.C. Casey Jr.: In Atomic Diffusion in Semiconductors, ed. by D. Shaw (Plenum,

London 1973) p.351. 11.72 R.A. Morrow: J. App!. Phys. 68, 2663 (1990) 1-1.73 A.G. Foyt, W.T. Lindley, C.M. Wolfe, J.P. Donnelly: Solid State Electron. 12,

209 (1969) 11.74 J.M. Zavada, H.A. Jenkinson, R.G. Sarkis, R.G. Wilson: J. App!. Phys. 58, 3731

(1985) 11.75 S.J. Pearton, J.M. Poate, F. Sette, J.M. Gibson, D.C. Jacobson, J.S. Williams:

Nucl. Instr. Meth. B 19/20,369 (1987) 11.76 J.M. Zavada, S.J. Pearton, R.G. Wilson, C.S. Wu, M. Stavola, F. Ren, J. Lopata,

W.C. Dautremont-Smith, S.W. Novak: J. Appl. Phys. 65, 347 (1989) 11.77 H.C. Synman, J.H. Neethling: Rad. Eff. 60, 147 (1982) 11.78 H.C. Snyman, J.H. Neethling: Rad. Eff. 69, 199 (1983) 11.79 R.C. Newman, J. Woodhead: Rad. Eff. 53, 41 (1980) 11.80 J. Tatarkiewicz, A. Krol, A. Breitschwerdt, M. Cardona: Phys. Stat. Sol. B 140,

369 (1987) 11.81 K. Steeples, G. Dearnaley, A.M. Stoneham: Appl. Phys. Lett. 36, 981 (1980) 11.82 Y. Riede, H. Neumann, H. Sobotta, C. Asheron, Y. Geist: Solid State Commun.

47,33 (1983) 11.83 Y. Riede, H. Neumann, H. Sobotta, C. Asheron, B.Y. Novikow: Solid State

Commun. 61, 113 (1987) 11.84 S.J. Pearton, C.S. Wu, M. Stavola, F. Ren, J. Lopata, W.e. Dautremont-Smith,

S.M. Vernon, Y.E. Haven: Appl. Phys. Lett. 51, 496 (1987) 11.85 J.M. Zavada, R.G. Wilson, S.W. Novak: Proc. 17th Europ. Solid State Device

Research Conf. (1987) 11.86 E. Constant, N. Caglio, J. Chevallier, J.C. Pesant: Electron. Lett. 23, 841 (1987) 11.87 G.S. Jackson, D.C. Hall, L.J. Guido, W.E. Plano, N. Pan, N. Holonyak Jr., G.E.

Stillman: Appl. Phys. Lett. 52, 691 (1988) 11.88 G.S. Jackson, N. Pan, S. Peng, G.E. Stillman, N. Holonyak Jr., R.D. Burnham:

Appl. Phys. Lett. 51, 1629 (1987) 11.89 W.C. Dautremont-Smith, J.C. Nabity, Y. Swaminathan, M. Stavola, J. Cheval-·

lier, C.W. Tu, S.J. Pearton: App!. Phys. Lett. 49, 1098 (1986)

Chapter 12

12.1 G. Alefeld, J. YOlkl (eds.): Hydrogen in Metals ll, Topics Appl. Phys., Yol.29 (Springer, Berlin, Heidelberg 1978)

12.2 L. Schlapbach (ed.): Hydrogen in Intermetallic Compounds I, Topics Appl. Phys., Yol.63 (Springer, Berlin. Heidelberg 1989)

12.3 C. Kisielkowski-Kemmerich: Private communication

356

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(1962) 12.13 A. Art, E. Aerts, P. Delavignette, S. Amelinckx: Appl. Phys. Lett. 2, 40 (1963) 12.14 R. Bullough, R.C. Newman: Prog. Semicond. 7, 99 (1963) 12.15 T. Figelski: Phys. Stat. Sol. 6, 529 (1964) 12.16 G.R. Booker, L. M. Brown: Phil. Mag. 11, 1315 (1965) 12.17 H. Alexander, R. Labusch, W. Sander: Solid State Commun. 3, 357 (1965) 12.18 J.P. Hirth, J. Lothe: Theory of Dislocations (McGraw-Hili, New York 1968)

p.353 12.19 R.H. Glaenzer, A.G. Jordan: Solid State Electron. 12,247 (1969) 12.20 H. Alexander, P. Haasen: Solid State Physics 22, 28 (Academic, New York

1968) 12.21 J.L.F. Ray, D.J.H. Cockayne: Phil. Mag. 22, 853 (1970)

J.L.F. Ray, D.J.H. Cockayne: Proc. Roy. Soc. A 325, 543 (1971) 12.22 U. Schmidt, E. Weber, H. Alexander, W. Sander: Solid State Commun. 14, 735

(1974) 12.23 A. Gomez, D.J.H. Cockayne, P.B. Hirsch, V. Vitek: Phil. Mag. 31, 105 (1975) 12.24 A. George, G. Champier: Phil. Mag. 31, 961 (1975) 12.25 J. Blanc: Phil. Mag. 32, 1023 (1975) 12.26 H. Alexander, M. Kenn, B. Nordhofen, E. Weber: Lattice Defects in Semicon-

ductors 1974 (Inst. Phys., Bristol 1975) p.453 12.27 V.A. Grazhulis, V.V. Kveder, Yu.A Osipyan: JETP Lett. 21, 335 (1975) 12.28 T. Wosinski, T. Figelski: Phys. Stat. Sol. B 71, 1273 (1975) 12.29 N.A. Drozdov, A.A. Patrin, V.D. Tkachev: JETP Lett. 23, 597 (1976) 12.30 K. Wessel, H. Alexander: Phil. Mag. 35V, 1523 (1977) 12.31 N.A. Drozdov, A.A. Patrin, V.D. Tkachev: Phys. Stat. Sol. (b) 83, K137 (1977) 12.32 E. Weber, H. Alexander: In Lattice Defects in Semiconductors 1976, ed. by N.B.

Urli, J.W. Corbett (loP, Bristol 1977) p.266 12.33 V.A. Grazhulis, V.V. Kveder, Yu.A. Ossipyan, Y .. Lee, R.L. Kleinhenz, H.

Van Camp, C. P. Scholes, J.W. Corbett: Phys. Lett. A 66, 398 (1978) 12.34 W. Schroter: In Defects, Radiation Effects in Semiconductors 1978, ed. by J.H.

Albany (loP, Bristol 1979) p.l14 12.35 E.R. Weber, H. Alexander: J. Physique. Colloq. 40, C6-101 (1979) 12.36 R. Erdmann, H. Alexander: Phys. Stat. Sol. A 55, 251 (1979) 12.37 S. Amelinckx: In Dislocations in Solids:Dislocations in Crystals, ed. by F.R.N.

Nabarro (North-Holland, Amsterdam 1979) Vol.2, Chap.6, pp.67-460, cf.288-300

12.38 R.H. Uebbing, P. Wagner, H. Baumgart, H. Queisser: Appl. Phys. Lett. 37, 1078 (1980)

12.39 N.A. Drozdov, A.A. Patrin, V.D. Tkachev: Phys. Stat. Sol. (a) 64, K63 (1981) 12.40 D. Gwinner, R. Labusch: Phys. Stat. Sol. (a) 65, K99 (1981) 12.41 J.R. Patel, L.C. Kimerling: Cryst. Res. Technol. 16, 187 (1981) 12.42 M.Suezawa, Y. Sasaki, Y. Nishina, K. Sumino: Jpn. J. Appl. Phys. 20, L537

(1981) 12.43 W. Szielko, O. Breitenstein, R. Pickenheim: Cryst. Res. Technol. 16, 197 (1981)

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12.45 M. Suezawa, K. Sumino, M. Iwaizumi: In Defects. Radiation Effects in Semiconductors 1980, ed. by R.R. Hasiguti (lnst. Phys., Bristol 1981) p.407

12.46 M. Suezawa, K. Sumino, Y. Nishina: Jpn. J. Appl. Phys. 21, L518 (1992) 12.47 Yu.A. Ossipyan, A.M. Rushchev, E.A. Shteinman, E.B. Yakimov, N.A. Yarykin:

Sov. Phys. JETP 55, 294 (1982) 12.48 H. Alexander, C. Kisielkowski-Kemmerich, E.R. Weber: Physica B 116, 583

(1983) 12.49 M. Suezawa, K. Sumino: Phys. Stat. Sol. (a) 78, 639 (1983) 12.50 M. Suezawa, Y. Sasaki, K. Sumino: Phys. Stat. Sol. (a) 64, 173 (1983) 12.51 M. Suezawa, K. Sumino: J. Physique, Colloq. 44, C4-133 (1983) 12.52 D. Gwinner: J. Physique, Colloq. 44, C4-141 (1983) 12.53 E.R. Weber, H. Alexander: J. Physique, Colloq. 44, C4-319 (1983) 12.54 W. Schroter, M. Seibt: J. Physique, Colloq. 44, C4-329 (1983) 12.55 A. Ourmazd: Contemp. Phys. 25, 251 (1984) 12.56 P. Omling, E.R. Weber, L. Montelius, H. Alexander, J. Michel: Phys. Rev. B 32,

6571 (1985) 12.57 H. Ono, K. Sumino: J. Appl. Phys. 57, 287 (1985) 12.58 R. Sauer, E.R Weber, J. Stoltz, E.R. Weber, K.H. Kusters, H. Alexander: Appl.

Phys. A 36, 1 (1985) 12.59 E.R. Weber, P.Omling, C. Kisielkowski, H. Alexander: Izv. Akad. Nauk 51, 644

(1987) 12.60 M. Yoshimatusu, T. Suzuki, T. Kabayashi, K. Kohra: J. Phys. Soc. Jpn. 17,583

(1962) 12.61 Y. Yukimota, A.Hirano, Y. Sugioka: Jpn. J. Appl. Phys. 6, 420 (1967) 12.62 Y. Yukimota: Jpn. J. Appl. Phys. 7, 348 (1968) 12.63 M. Yoshimatsu: J. Phys. Soc. Jpn. 18, Suppl.II, 335 (1963) 12.64 Y. Sugita: Jpn. J. Appl. Phys. 4, 962 (1965) 12.65 A.J.R. DcKock: Philips Res. Repts. Suppl. No.1, 56 (1973) 12.66 E. Ligion, A. Guivarch: Rad. Efr. 27, 129 (1976) 12.67 W.K. Chu, R.H. Kastl, R.F. Lever, S. Mader, B.J. Masters: In Ion Implantation

in Semiconductors 1976, ed. by F. Chernow, J.A. Borders, D.K. Brice (Plenum, New York 1977) p.483

12.68 E. Wolf, K. Fischer, B. Lux, H.-J. Schilling, W. SchrOder, K. StUdemann: lith Congr. Crystallography (Warsaw 1976) Top.! 1, p.6

12.69 E. Wolf: Phys. Stat. Sol. (a) 70, K59 (1982) 12.70 T.S. Plaskett: Trans. AIME 233,809 (1965) 12.71 V.V. Voronkov: Sov. Phys. Crystallogr. 19, 137 (1974) 12.72 A.G. Tweet: J. Appl. Phys. 29, 1520 (1958) 12.73 A.G. Tweet: J. Appl. Phys. 30, 2002 (1959) 12.74 J.W. Corbett, C. Ortiz-Rodriguez, P. Deak, L.C. Snyder: J. Nucl. Materials 169,

179 (1989) 12.75 See, for example, J.W. Corbett, D. Peak, S.J. Pearton, A. Sganga. In Hydrogen in

Disordered. Amorphous Solids, ed. by G. Bambakidis, R.C. Bowman, R.P. Griessen (Plenum, New York 1986) p.243

12.76 W.C. Dash: J. Appl. Phys. 27,1193 (1956) 12.77 J.A. Kohn: Am. Miner. 43, 263 (1958) 12.78 J. Hornstra: J. Phys. Chern. Solids 5,129 (1958) 12.79 J. Hornstra: Physica 25, 409 (1959) 12.80 T.-Y. Tan: Phil. Mag. 44,101 (1981) 12.81 See, for example, the review by J.W. Corbett, J.P, Karins, T.-Y. Tan.: Nucl.

Instr. & Methods 82/183, 457 (1981)

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12.83 J. W. Corbett, J.P. Karins, T.-Y. Tan: Nuc!. Instr. & Meth. 182/183,457 (1981) 12.84 G.D. Watkins, J.W. Corbett: Phys. Rev. 87, A543 (1965) 12.85 H. Riess: J. Chern. Phys. 25, 681 (1956) 12.86 J. Wang, C.A. Kittle: Phys. Rev. 87, 713 (1973) 12.87 V.A. Singh, C. Weigel, J.W. Corbett, L.M. Roth: Phys. Stat. Sol. (b) 81, 637

(1977) 12.88 V.A. Singh, J.W. Corbett, e. Weigel, L.M. Roth: Phys. Lett. A 65, 261 (1978) 12.89 C.O. Rodriguez, M. Jaros, S. Brank: Solid State Commun. 31, 43 (1979) 12.90 A. Mainwood, A.M. Stoneham: Physica B 116, 101 (1983) 12.91 J.W. Corbett, S.N. Sahu, T.S. Shi, L.e. Snyder: Phys. Lett. A 93, 303 (1983) 12.92 T.S. Shi, S.N. Sahu, J.W. Corbett, L.C. Snyder: Scientia Sinica 27,98 (1984) 12.93 A. Mainwood, A.M.Stoneham: J. Phys. C 17,2513 (1984) 12.94 G.G. De Leo, W.B. Fowler, G.D. Watkins: Phys. Rev. B 29, 1819 (1984) 12.95 J.1. Pankove, P.J. Zanzucchi, e.W. Magee, G. Lucovsky: App!. Phys. Lett. 46,

421 (1985) 12.96 S. Estreicher: Phys. Rev. B 36, 9122 (1987) 12.97 P. Deftk, L.C. Snyder, J. L. Lindstrom, J.W. Corbett, S.J. Pearton, A.J. Taven

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12.99 C.G. Van de Walle, Y. Bar-Yam, S.T. Pantelides: Phys. Rev. Lett. 60, 2761 (1988)

12.100 A.A. Bonapasta, A. Lapiccirella, N. Tomassini, M. Capizzi: Europhys. Lett. 7, 145 (1988)

12.101 M. Capizzi, C. Coluzza, A. Frova, A.A. 13onapasta, A. Lapiccirella, M. Tomassini, A. Forchal: App!. Phys. Lett. 55, 772 (1989)

12.102 P. Deak, L.C. Snyder, J.W. Corbett: Phys. Rev. B 37, 6887 (1988) 12.103 e.G. van de Walle, Y. Bar-Yam, S.T. Pantelides: Phys. Rev. B 39, 10791

(1989) 12.104 G.G. De Leo, M.J. Dorogi, W. Beall Fowler: Phys. Rev. B 38, 2520 (1988) 12.105 S.T. Picraux, F.L. Vook: Phys. Rev. B 14, 1593 (1976) 12.106 S.T. Picraux, F.L. Vook: Phys. Rev. B 18,2066 (1978) 12.107 B. Bech Nielsen: Phys. Rev. B 37, 6353 (1988) 12.108 Yu.V. Gorelkinskii, N.N. Nevinnyi: Pis'ma Zh. Tekh. Fiz. 13, 105 (1987) 12.109 V.A. Gordeev, Yu.V. Gorelkinskii, R.F. Konopleva, N.N. Nevinnyi, Yu.V.

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12.1 10 R.F. Kiefl, M. Celio, T.L. Estle, G.M. Luke, S.R. Kreitzmann, J.H. Brewer, D.R. Noakes, E.J. Ensaldo, K. Nishiyama: Phys. Rev. Lett. 58, 1780 (1987)

12.111 R.F. Kiefl, M. Celio, T.L. Estle, S.R. Kreitzman, G.M. Luke, T.M. Riseman, E.J. Ensaldo: Phys. Rev. Lett. 60, 224 (1988)

12.112 N.M. Johnson, F.A. Ponce, R.A. Street, R.J. Nemanich: Phys. Rev. B 35, 4188 (1987)

12.113 F.A. Ponce, N.M. Johnson, J.e. Tramontana, J. Walker: In Microscopy of Semiconducting Materials, ed. by A.G. Cullis (loP, Bristol 1987) p.49

12.114 H.P. Strunk, H. Cerva, E.G. Mohr: In Microscopy of Semiconducting Materi-als, ed. by A.G. Cullis (loP, Bristol 1987) p.457

12.115 H.P. Strunk, H. Cerva, E.G. Mohr: J. Electrochem. Soc. 135,2876-2880 (1989) 12.116 S.-J. Jeng, G.S. Oehrlein, G.J. Scilla: App!. Phys. Lett. 53,1755 (1988) 12.117 N.M. Johnson, C. Herring: In Proc. Int'I Conf. Physics of Semicond. (Warsaw

1988)

359

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360

Subject Index

AA925,262 AB site 235 Acceptors 63 Acceptor passivation 14,63,93,103,137 Ag 32 AIGaAs 54 Apparent diffusivity 224 Ar 42 AsH3 170,31 I Atomic hydrogen 1,4, 10 Au 29,30

BC site 235 Be-H (in GaAs) 137 Be-H (in Gc) 186 Be-H (in Si) 14 Bias drift 232 BN 100 Boiling in water 5,92,282 Boltzmann-Matano 204 Bourgoin-Corbctt mcchanism 175 BP 100

Carbon 43 CdTe 28,57,96 CdI-lgTe 57 CF4 41 Chcmisorption 170 Channelling 72 Charge states 239 Chemical etching 288 Cluster calculations 154 Co 32 Compcnsation 69 CNDO 25 Cr 34 Cu 34,300 CYD 296

Deep levels 28 Defccts 41 Defcct symmetry 83 Deutcrium 6,144,147 Dcv ice applications 316

Dichroic 130 Diffusion-hydrogen 200 Diffusion path 234 DLTS 306 Donors 14 Donor passivation 83 Drift 77 Dynamic motion 103,152 OX ccnters 54

Effective diffusivity 20 I Einstein relation 203 EL252 Electron field gradient 275 Electron-hole pairs 181 Electron irradiation 175 Electron mobility 86 Electron traps 179 Embrittlement 5,319 EPR 10,258 Ex tcnded H uckcl thcory 10

Fe 29 Fcrmi level 179 Fick's laws 203 Frenkel pairs 179 FfIR 185

GaAs4 GaAs-on-Si 4,3 I3 GaP 24,97 GaSb 255 Gauss law 203 Ge 4,98 Grain boundaries 244

Halogcn lamps 288 Hartree-Fock cakulation 83 He 8 HgCdTe 4 Hole traps 179 Hydrogen - implantation 9 - incorporation 259

361

- molecules 245 - plasmas 5,6,7,262 - related defects 182, 188 - related donors 182

Implant-induced levels 182 Infrared frequencies 196 InP 99,309 InSb 255 Interstitials 10,12 Ion beam processing 312 Ion bombardment 292 Isotope shift 140

Kinetics 129

Leakage current 28 LEC 259 LIthIUm 46 Local density function theory 18 Local modes 103,110

M13E 53 Metal deposition 296 Metallic impurities 28,32 Mg 137 Microscopic characteristics 137 MINDO 17,36,157 Minority carrier - annealing 80 - lifetime 28 MNDO 50 Mo 30 MOCVD 309 Molecular dynamics calculations 242 Molecular formation 208 MOSFETs 284,308 Multiple trapping 214 Muonium 24,101,263

Na 50 Neutron - irradiation 178 - transmutation doping 182 Neutralization 77 Ni 30

038 ODENDOR 268 Oxidation 170

PAC 271 Pairing 68,69 Passi vation 28

362

Pd 30 Permeability 222 PH3 311 Phonon interactions 200 Photoluminescence 86 Pick-off reactions 77 Plasma etching 159 Platelets 241 Point defects 232 Prehydrogenation 49 Proton implantation 164,178,305 Pt 30

Quenching 45

Radiation damage 45 Raman spectroscopy 107,328 Reactive ion etching 282 Reactivation 73,85 Reorientation 121 Resonance techniques 258 Rh 32

S 36 Schottky diodes 291 Se 36 Self-interstitials 175 SF6 293 Sidebands 105 Si 1,4,28 SiGe 46 SIMS 6,68 Si02 283 Sn-H (in GaAs) 143 Solar cells 4 Solubility 245 Sputter - etching 44 - deposition 282 STM 173 Stress 121

Td site 278 Te 36 TEM 326 Thermal stability 47,73 Ti 34 Total energy calculation 19 Trigonal symmetry 120 Tunnelling motion 132, 186

Uniaxial stress 83,126 Unintentional hydrogenation

148,282

V 34 Vacancy 175 Vacancy aggregates 177 Vacancy loops 328 Van Wieringen

and Warmoltz relation 222 Vibrations (infrared) 110, 190 Vibrational spectroscopy 110

W 296 Wafer polishing 282 Wagging mode 106

Zn 35,309 Zn-H (in Ge) 186 Zn3 P2 28

363

Documents

References - link.springer.com978-3-642-84778-3/1.pdf · References Chapter 2 2.1 See, for example, P.S. Peercy: Nucl. Instr. Meth. 182/183,337 (1981) and refer ences therein J.D