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Supplementary Material

Reliability Improvement of a Flexible FD-SOI

MOSFET via Heat Management

Jae Hoon Bong1, Seung-Yoon Kim1, Chan Bae Jeong2, Ki Soo Chang2, Wan Sik Hwang3 and

Byung Jin Cho1,a)

1School of Electrical Engineering, Korea Advanced Institute of Science and Technology,

Daejeon, 34141, Republic of Korea 2Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 34133, Republic

of Korea 3Department of Materials Engineering, Korea Aerospace University, Goyang, 10540, Republic

of Korea

a) Corresponding author. E-mail: bjcho@kaist.edu

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FIG. S1. (a, b) Cross-sectional TEM images of the transistor channel region. The inset image in

(b) is the electron diffraction pattern of the Si channel. (c) Cross-sectional schematic image and

(d) optical microscope image of the fabricated FD-SOI MOSFET. The channel length and width

are 30 μm and 80 μm, respectively.

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FIG. S2. Drain currents of the sc-Si membrane transistor on PDMS/PI film with and without the

HSL as a function of bias stress time at VG = 3 V, VD = 8 V for 30 min.

FIG. S3. Repeated measurement results (ID-VG) of the bias-stressed sc-Si membrane transistor on

PDMS/PI film without the HSL.

0 5 10 15 20 25 300.5

1.0

1.5

2.0

2.5L/W(mm) = 30/80

w/ HSL w/o HSL

Drai

n cu

rrent

(mA)

Time (min)

VG = 3 V, VD = 8 V

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FIG. S4. Maximum device temperature of the sc-Si membrane transistor on PDMS/PI film

without the silver HSL during the device operation at VG = 3 V, VD = 8 V.

FIG. S5. Large scale temperature profile image of the transferred Si membrane device w/o HSL.

The transistor inside box #6 is biased at VG = 3 V, VD = 8 V, and the other transistors are not

biased.

0 5 10 15 20 25 3020

30

40

50

60

70

80VG= 3 V, VD= 8 V

Time (min)

Tem

pera

ture

(°C)

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FIG. S6. (a) Cross-sectional schematic image of the sc-Si membrane transistor on PDMS/PI film

without and with the silver HSL. Neutral mechanical planes are shown as a red dotted line. (b)

Young’ modulus and Poisson’s ratio values of the materials used in this work.