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Report from CNM activities. Giulio Pellegrini Centro Nacional de Microelectronica Barcelona, Spain. Mask design. spreading. Diodes 2D. 3x3 matrix. Medipix2. Test structures. Atlas pixel. 3d pads. strips. Test for SEM. Long strip. MOS. 10x10 matrix. Pilatus. Layout. - PowerPoint PPT Presentation
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Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Report from CNM activitiesReport from CNM activities
Giulio Pellegrini
Centro Nacional de Microelectronica
Barcelona, Spain
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Medipix2
Diodes 2Dspreading
Test structures
Atlas pixel
3d pads
strips
Long strip
10x10 matrixMOS
Test for SEM
3x3 matrix
Pilatus
Mask designMask design
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
LayoutLayout
Passivation
n+ doped
55um pitch
50-0um
300-250ump- type substrate
p+ doped
10um
Oxide0.4um1um
p+ doped
Metal
Poly 3um
OxideMetal
P-stop p+
50-0um TEOS 2um
5um
High resistiv itySem iconductor
Pixel readout
Electronics ch ip
Solder bum p
PN N
3 detectors have been bump bonded in VTT to a Medipix2 chip.3 will be done soon
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Fabricated detectorsFabricated detectors
3rd Workshop on Advanced Silicon Radiation Detectors
C. Fleta
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Double sided 3DDouble sided 3DFirst run is p-in-n:
• 250 μm p+ columns in 300 μm n-type substrate
Electrode fabrication:1. ICP etching of the holes: Bosch process, ALCATEL 601-E2. Holes partially filled with 3 µm LPCVD poly3. Doping with P or B4. Holes passivated with 2 µm TEOS SiO2
(all fabrication done in-house)
-Deep RIE-ICP.
- Load-lock manual one 4” wafer
- SF6 etching
- C4F8 passivation
- Cooled mechanical clamping :He-Ln2
- Possibility of Cryogenic etching.
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Bump bonding at Bump bonding at CNMCNM
• Small clean room class 100 at CNM dedicated to packaging: Flip chip, Wire bonding, CMP
• Joint project with IFAE (High Energy Physics Institute)
• Bump bonding machine Süss Microtech FC150Installation finished last week
• Bumping process ready: electrodeposited SnPb and SnAg
• CMP G&P POLI-400L (Installation pending)
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Holes etchingHoles etching
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Poly fillingPoly filling
polysilicon
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Doping of polyDoping of poly
Poly-n+
Si-n+
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Poly etchingPoly etching
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Second etchingSecond etching
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Second poly fillingSecond poly filling
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Si-n-
Si-p+
Si-n+
SiO2
Poly-p+
Poly-n+
Al/Cu
Passiv
Final sampleFinal sample
Mask Levels
• Back-window
• N-DIFF
• N-HOLES
• P-HOLES
• POLY
• WINDOW
• METAL
• PASSIV
• Bump bonding
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
3D technology3D technology
•10 m holes•55m pitch•90 minutes etching•300 m thick wafer•Aspect ratio 24:1
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
3D technology3D technology
10um
45um
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
3D technology3D technologypixels strips
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Pixel configurationPixel configuration
Polysilicon contactOpening in the passivation
P-type Hole Metal
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Medipix 2
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Atlas pixelsAtlas pixels
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Test structures
Strips (DC coupled)Pilatus
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
TestingTesting
•Irradiation with neutrons- please see Celeste´s talk
•Charge collection- please see Celeste´s talk
•Electrical characterization I-V and CV
•Imaging- waiting for bump bonding
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
New Fabrication RunNew Fabrication Run
Passivation
n+ doped
55um pitch
300um
p- type substrate
p+ doped
Oxide0.4um1um
p+ doped
Metal
Poly 3um
Oxide
Metal
P-stop p+
Oxide 2um
5um13um
8 wafers p-type8 wafers n-type
In Fabrication, due for the end of June 2008
Giulio Pellegrini 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)
Thank you