Upload
others
View
3
Download
0
Embed Size (px)
Citation preview
Report on the IT ASIC Front-End evaluation
Duccio Abbaneo, Jorgen Christiansen, Natale Demaria, Karl Ecklund, Natalia Emriskova, Luigi Gaioni, Dominik Koukola, Flavio Loddo, Michael McGinnis, Stefano Mersi, Ernesto Migliore, Ennio Monteil, Stella Orfanelli2019-06-05Tracker Plenary during Tracker Week
2RD53A Analog Front-end
●Single amplification stage with Krummenacher feedback for linear ToT charge encoding and detector leakage current compensation●Asynchronous current comparator●4 bit local DAC for threshold tuning
Linear FE
● Continuous reset integrator first stage with DC-coupled pre-comparator stage● Two-stage open loop, fully differential input comparator● Leakage current compensation circuit (can be enabled/disabled)● 4+1 bit local DAC for threshold tuning
Differential FE
Guidelines: https://twiki.cern.ch/twiki/pub/RD53/RD53ATesting/SYNC_FE_TESTING_SPECIFICATIONS.pdfhttps://twiki.cern.ch/twiki/pub/RD53/RD53ATesting/LIN_AFE_guidelines.pdfhttps://twiki.cern.ch/twiki/pub/RD53/RD53ATesting/Diff_userguide.pdf
●Telescopic-cascoded CSA with Krummenacher feedback for linear ToT charge encoding and detector leakage current compensation●Synchronous hit discriminator with track-and-latch comparator●Threshold trimming using the auto-zeroing technique (no local trim DAC → no SEU) , to be performed during Abort Gap (every ~ 80 us)●ToT counting using 40 MHz clock or fast counting using latch as local oscillator (30-400 MHz)
Synchronous FE
3Analog Front-End reviewDecember ‘18 – January ‘19: RD53 Review of RD53A Analog Front-ends. Committee made of ASIC design experts independent from the two experiments & detector experts from ATLAS and CMS● Assess the functionality of the designs● Identify potential issues & suggest corrective actions● Propose a list of specific tests to be carried out, test conditions and the most
suitable metrics to be used in comparing the front-ends● Compile a complete report of the findings → January 31, 2019
Each of the two experiments could use the results of this review process, together with other investigations and considerations as appropriate, to define the preferred design choice
4Result of January reviewFirst review conclusions:
● We have presented measurement results showing that the three front-ends have shown strong points but also imperfections. Unfortunately and due to [schedule constraints], the cause of some of the imperfections are to this date not understood. Based on the technical facts exposed in this document, the review committee believes that the Linear Front End is the design that presents a lower risk in its integration into a full scale chip. The reviewers recommend the designers to follow the recommendations that have been exposed in this document and to study the performance of the comparator for its optimization (with minor modifications).
● The reviewers would like to encourage the other teams to continue investigating the limitations on their front-ends– perform more measurements (and on more samples)– improve interaction between the measurement and the design teams– reproduce effects in [chip] simulation to better understand the observed effects
5Recommendations → new Task ForceATLAS: choice done at the end of February, constrained by ATLAS chip submission in September 2019: Differential FECMS: choice before July, to allow CMS prototype chip submission in April 2020. This allowed to address the Front-End selection with a structured approach: a Task Force was formed (with a mix of chip designers, DAQ and simulation experts) to collect material for a final decision within May. Following the recommendations of the review, the aim was to:
● Follow-up possible design improvements● Characterize issues (via the interactions of measurements and simulations)● Define a set of parameters impacting detector performance and evaluate the
different designs against these
Outline of the talk
● Follow-up possible design improvements● Characterize issues (via the interactions of measurements and simulations)● Define a set of parameters impacting detector performance and evaluate the
different designs against these
Outline of the talk
● Follow-up possible design improvements● Characterize issues (via the interactions of measurements and simulations)● Define a set of parameters impacting detector performance and evaluate the
different designs against these
8Design improvementsSYNCHRONOUS LINEAR DIFFERENTIAL
Advantages• No trimming needed• No overdrive
• Well understood architecture • Very low noise occupancy• Small threshold dispersion
Limitations• Large noise occupancy with
sensors• Large overdrive• TDAC saturation at cold
• Large timing dispersion• Tuning issues with leakage
current
Here some brief summary of design improvements (and standing limitations).Too much work to be reported here – more details available in yesterday’s IT ASICs session:● Synchronous:
https://indico.cern.ch/event/818375/contributions/3429701/attachments/1844782/3026266/Sync_FE_presentation_15052019.pdf● Linear:
https://indico.cern.ch/event/818375/contributions/3429702/attachments/1844810/3026316/LIN_AFE_summary.pdf● Differential:
https://indico.cern.ch/event/818375/contributions/3429700/attachments/1844754/3026224/Loddo_IT_ASIC_15May2019_V2.pdf
9Synchronous front-endMain developments after January Review:● Studies on AZ-related spikes on power rails:
fix available: new AZ distribution schemesee yesterday’s talk for details
● Fake hits measurements & threshold shift:see next slides
● Noise simulations and matching with measurements:ENC noise better reproduced now in simulation – see yesterday’s talk for details
● Improvements to the faster return to baseline (Krum. circuit)design improvement available: more phase margin – see next slides
Also the results obtained with non-uniform irradiation has been studied and understood
Power spikesFixed design
Ennio Monteil
10Sync: fake hits & threshold drift
Small threshold decrease (~20 e¯ / AZ cycle)This effect visible also in simulation But: current can be different among pixels (mismatches)
Small number of pathological pixels show a much larger drift~ 0.2% of the pixels show this behaviour
Effect is understood and a mitigation strategy is proposed(dedicated voltage line to decrease the mean shift → reduce extreme ones)
Threshold vs. time: average Threshold vs. time: noisy pixel
Ennio Monteil
11Sync: feedback improvementFront-end stability with fast return to baseline was demonstrated to be important (see later)
Design change proposed & evaluated: modification of Krummenacher W/L = 1.2÷1 → 0.3÷4
Simulation for different PA bias & feedback capacitance: noise performance improves, stability of the first stage improves – same front-end tuning
Input signal1 ke¯Speed1 TOT₈₀/2500 e¯Ileak20 nA (worst case)
0 fF
25 fF
50 fF
400 ns 400 ns
100 mV
Current Improved
Ennio Monteil
12Linear front-endThe RD53A version of the LIN front-end has been extensively tested
RD53A main issues:● Larger time-walk: improved version of the
comparator (improved time-walk)Prototype chip including new TDAC has been characterized (also after irradiation) showing good results
● Channel trimming saturation effect (TDAC): new 5-bit TDAC (saturation effect fixed)
Post-layout simulations (different corners) do not point out particular issues for the new version of the Linear FE: (noise and thr. dispersion, timewalk, ToT linearity, TDAC range, threshold tuning, voltage drop, fast return-to-baseline)
overdrive
Natalia Emriskova
13Lin: improved time-walk RD53A RD53B
Significant improvement in time-walk shown in simulation at the cost of a marginal increase in static current consumption
Luigi Gaioni
14Lin: improved threshold trimming
RD53A RD53B
Saturation effect @ cold (large ILDAC)
Trimming DAC [4b]0x0 0xF
Trim
min
g cu
rren
t [µA
]
0
0xF
0.8Room T
Cold
Room T
Cold
TDAC saturation effect fixed in RD53B
Trimming DAC [5b]0x0 0x1F Luigi Gaioni
Trim
min
g cu
rren
t [µA
]0
1.6
15Lin: improved trimming in siliconNew version of the TDAC was integrated in a small prototype chipPrototype TDAC chip irradiated: fully functional at 460Mrad (& steps @ 1, 85 Mrad)
RD53B(X-rays, 3 Mrad/h, room T)
Luigi Gaioni
16Differential front-endDIFF FE is designed by: Amanda Krieger, Dario Gnani, Abder Mekkaoui, Aikaterini Papadopoulou (LBNL)
PreAmplifierStraight regulated cascode (single bias)Gain selectionDischarge with simple MOSFET in parallel (no Krummenacher) Global bias DAC setting of discharge current (VFF → ToT)
Leakage Current Compensation Circuit (LCC)Low-pass filter with bias DAC adjustable gain/cutoff frequencyPlaced in parallel with Cfeed and discharge MOSFET to drain sensor DC leakage
PreComparatorUses the PREAMP input node as a pseudo-differential reference to generate a differential thresholding circuitAdditional gain (2×)Differential Trim DAC
ComparatorContinuous time single-to-diff OpAmpPositive feedback in OTA to enhance gain
17Diff: strong pointsVery low noise
excellent minimum threshold⇒Fast rise time
low time walk⇒
Natalia Emriskova
18Diff: limitations● Bug between comparator output and the first digital gate
Simple solution implemented in design (see yesterday’s slides)Patch applied for tests: 8×8 pixel matrix masked
● Slow comparator output stageThe output stage discharges at ≈20ns/V σ⇒ TIME = (dt/dV) σTHR = 1.8 ns (10 ns pk-pk)Solution: inverting the comp polarity (faster) ⇒ σTIME = (dt/dV) σTHR = 1.2 ns (6 ns pk-pk)
● Trimming DAC affects ToT valuesSolution: no changes – accept as deterministic
● Problematic threshold tuning after irradiation at coldMitigation found (see next slides)
● Not well understood behaviour with irradiated sensors/leakage current at coldSolution not yet found (see next slides)
● Limited return-to-baseline tuning rangePerformance at the limit of CMS requirements (see further slides)
Timing Mask
19Diff: threshold tuning irrad/coldProblematic threshold tuning after irradiation at cold: due to the combined effect of PMOS threshold increase for both cold T and irradiation, the PRECOMP doesn’t work properlyProblematic threshold tuning after irradiation at cold: due to the combined effect of PMOS threshold increase for both cold T and irradiation, the PRECOMP doesn’t work properly
Mitigation: decrease LLOAD from 4 µm to 0.6 µm → Vmargin ≥ 0 at -30 °C and 500 Mrad
Our hottest module:1250 Mrad in 3000 fb¯¹(Fluka with no addedmargin)
20Diff: irrad sensor/leakage currentNot well understood behaviour with irradiated sensors/leakage current at cold T:
● Tests with bias current from few irradiated sensor and un-irradiated modules with IR LEDs● Threshold tuning was difficult and not always successful● Proper usage and biasing of LCC was not understood before RD53A testing● For irradiated sensor, also problem with PRECOMP described before contributes to the issue
No improvement suggested(no modifications foreseen so far)
Example test withHV = 260VIleak = 0.75 mA ≈ 10nA/pixel
Outline of the talk
● Follow-up possible design improvements● Characterize issues (via the interactions of measurements and simulations)● Define a set of parameters impacting detector performance and evaluate the
different designs against these
22Detector performance estimation
Relevant detector performance-related parameters were identified and are summarised above.Corresponding measurable quantities were identified to be:
● TOT for a defined charge: Q/TOT₄₀— 3000 e¯/TOT40 correspond to ~1% inefficiency in L1● Noise — 10¯⁶ occupancy correspond to 1% of L4 hits
– occupancy (excluding pixels with >10¯⁴ rate)– fraction of noisy pixels (only pixels with >10¯⁴ rate)
● Out-of-time hit rate (with the complex method described above)● Absolute threshold● Track resolution
feature impacts on affected detector performance
fast rise time & comparator hits correct BX assignment bandwidth + fake rate + hit resolution
fast return to baseline dead time efficiency (esp L1)
slow return to baseline TOT accuracy hit resolution
low noise hit rate fake hits bandwidth + fake rate (esp L4)
low detection threshold low-charge hit detection hit resolution + efficiency
low channel noise TOT accuracy hit resolution
The relation between these parameterswas studied in detail (see next slides)
23TOT accuracy
CMSSW simulations allowed to understand the impact of charge resolution in the TOT.This is determined by TOT quantization and its calibration spread, which depend on:
● Setting of the return-to-baseline current● Spread of the TOT value for a given charge injection
(due to both channel-to-channel variation and threshold spread)● Possible use of fast-TOT counter
feature impacts on affected detector performance
fast rise time & comparator hits correct BX assignment bandwidth + fake rate + hit resolution
fast return to baseline dead time efficiency (esp L1)
slow return to baseline TOT accuracy hit resolution
low noise hit rate fake hits bandwidth + fake rate (esp L4)
low detection threshold low-charge hit detection hit resolution + efficiency
low channel noise TOT accuracy hit resolution
24Impact of Q resolution on track σOne of the relevant parameters to investigate was the impact of the resolution in the conversion between charge and TOT
A number of studies were performed using the full CMSSW simulation to extract the impact of Q/TOT on σxy and σz for– Threshold: 1200 e¯ or 2400 e¯– Q/TOT₈₀: 300 e¯, 1500 e¯, 3000 e¯– Pixel: 50×50 µm², 25×100 µm²
Other simulation parameters:Single µ, with pT=10 GeV/c
Planar 150 µm-thick sensorsNo noisy pixels
Simple in-time threshold: 1200 e¯
25
0 1500 300010
15
20
Charge resolution [e¯/TOT ]₈₀
Tra
ck x
y r
eso
lutio
n [µ
m]
₀
2400e¯
1200e¯
2400e¯1200e¯
50×50
25×100
Threshold
0 1500 30000
40
80
120
160
Charge resolution [e¯/TOT ]₈₀T
rack
z r
eso
lutio
n [µ
m]
₀
2400e¯
1200e¯
2400e¯1200e¯
Threshold
50×50
25×100
50×50
Impact of Q resolution on track σThe track resolution on xy₀ plane and on z₀ is sensitive to the pixel geometry and on the threshold. Results show that it is quite insensitive to Q/TOT₈₀ instead (x axis in the plots). This is due to the fact that the single-hit resolution rms is dominated by cluster losing hits
Very little impact of TOT accuracy Ernesto Migliore
26Noise and thresholdfeature impacts on affected detector performance
fast rise time & comparator hits correct BX assignment bandwidth + fake rate + hit resolution
fast return to baseline dead time efficiency (esp L1)
slow return to baseline TOT accuracy hit resolution
low noise hit rate fake hits bandwidth + fake rate (esp L4)
low detection threshold low-charge hit detection hit resolution + efficiency
low channel noise TOT accuracy hit resolution
27Noise comparison
● Assemblies noisier that bare chips● Noise: SYNC > LIN> DIFF
Natalia Emriskova
SYNC
SYNC
LIN
DIFF
Noise rms Noise tails
SYNC
● Occupancy from noise tails clearly depends on selected threshold
28Noise occupancy
Output: • Noise hit distribution
sort pixels by number of hits
• TOT40 distribution
check if TOT40 of noise hits is low
• Average noise occupancy
2 pixels with
8 noise hits
Noise occupancy=𝑁h𝑖𝑡𝑠
𝑁 𝑝𝑖𝑥𝑒𝑙𝑠×𝑁 𝑒𝑣𝑒𝑛𝑡𝑠
Method: • No injection, no particles• Send 106 triggers• Count hits
Natalia Emriskova
29Noise occupancy
SYNC LIN
Noise hit distribution:• SYNC slow decrease + long tail• LIN quick decrease + some outliers• DIFFvery robust to noise, not a single noise hit over 106 triggers
Natalia Emriskova
30Pixel masking (“noisy” pixels)
o Required average noise occupancy of 10-6 corresponds to 1% of noise hits in layer 4
o Pixels > 100 hits / 106 triggers, i.e. with noise occupancy > 10-4
⟶ Declared noisy and masked to lower the overall noise occupancy of the FE
Masking
Natalia Emriskova
31Noise occupancy
Natalia Emriskova
● Noise occupancy: SYNC > LIN DIFF≫● Layer 1 scenario: threshold 1000 e- & fast discharge critical for SYNC FE (RD53A)⟶
32Noise occupancy vs PreAmp current
o The noise occupancy can be lowered by increasing the PA bias current in all 3 FEs
o But in has an impact on the power consumption
Reminder: Preamplifier bias• FE parameter (current)• Influence the speed of rise of the signal• Influence on the noise• Main contribution to the power
consumption
Decreasing global threshold
PA bias
Natalia Emriskova
33Noise and threshold: resultsfeature impacts on affected detector performance
fast rise time & comparator hits correct BX assignment bandwidth + fake rate + hit resolution
fast return to baseline dead time efficiency (esp L1)
slow return to baseline TOT accuracy hit resolution
low noise hit rate fake hits bandwidth + fake rate (esp L4)
low detection threshold low-charge hit detection hit resolution + efficiency
low channel noise TOT accuracy hit resolution
● Moving the detection threshold to 1000 e¯ increases the noise occupancy in a measurable way for both the Linear and the Synchronous front-end
● Noise occupancy can be mitigated by increasing the PreAmp current● Noise occupancy:
● SYNC > LIN DIFF≫● SYNC FE has long tail in the noise distribution
34Fast return-to-baselinefeature impacts on affected detector performance
fast rise time & comparator hits correct BX assignment bandwidth + fake rate + hit resolution
fast return to baseline dead time efficiency (esp L1)
slow return to baseline TOT accuracy hit resolution
low noise hit rate fake hits bandwidth + fake rate (esp L4)
low detection threshold low-charge hit detection hit resolution + efficiency
low channel noise TOT accuracy hit resolution
A return-to-baseline giving Q/TOT40=3000 e¯ (i.e. Q/TOT80=1500 e¯) corresponds to an expected dead time of 1% in L1. This is considered the target for CMS.
35
Preamplifier feedback current
influences:
• discharge speed
⇒ return to baseline
• time over threshold
⇒ dead time
• PA speed
⇒ higher noise occupancy
Increasing feedback current
Threshold
Increasing feedback current
o Important to reduce dead time in the detector (in particular in the innermost layers)o How fast can the preamplifier be discharged conserving good detection performance?
Preamplifier return-to-baseline
Natalia Emriskova
36Return-to-baseline comparison
o Target discharge speed 3000 e¯/TOT₄₀
reached by all FEso LIN and SYNC can discharge also fastero DIFF saturates
SYNC LIN
DIFF
Natalia Emriskova
37Return-to-baseline and noise
Noise: SYNC > LIN > DIFF (consistent with previous measurements)
• DIFF very low noise even at fast discharge
• LIN below 10-6 masking about 1% of pixels
• SYNC above 10-6 masking more than 2% Natalia Emriskova
38Fast return-to-baseline: resultsfeature impacts on affected detector performance
fast rise time & comparator hits correct BX assignment bandwidth + fake rate + hit resolution
fast return to baseline dead time efficiency (esp L1)
slow return to baseline TOT accuracy hit resolution
low noise hit rate fake hits bandwidth + fake rate (esp L4)
low detection threshold low-charge hit detection hit resolution + efficiency
low channel noise TOT accuracy hit resolution
● target Q/TOT₈₀ =1500 e¯ can be reached by all FEs (but Diff is at the limit)● going to a faster return-to-baseline reduces the phase margin of the front-end amplifier and
increases the noise hit rates.● influence on the threshold dispersion is negligible (see yesterday’s slides)
A return-to-baseline giving Q/TOT₄₀=3000 e¯ (i.e. Q/TOT₈₀=1500 e¯) corresponds to an expected dead time of 1% in L1. This is considered the target for CMS.
39Late hits evaluationfeature impacts on affected detector performance
fast rise time & comparator hits correct BX assignment bandwidth + fake rate + hit resolution
fast return to baseline dead time efficiency (esp L1)
slow return to baseline TOT accuracy hit resolution
low noise hit rate fake hits bandwidth + fake rate (esp L4)
low detection threshold low-charge hit detection hit resolution + efficiency
low channel noise TOT accuracy hit resolution
A slow front-end would result in a (large?) number of pixel hits being assigned to the wrong BX. This will negatively affect both bandwidth and resolutionA dedicated analysis combining measurements and CMSSW simulations was set-up to study this effect (see next slides)
40
1. FE timing measurements 2. Hit timing/amplitude:
CMSSW simulationDepending on the location
Late hits evaluation
Ernesto Migliore
41Time/ampl. measurements: “tornado”
Analog front ends: Synchronous Linear Differential
Thresholds: 1000 e-
1200 e-
PA discharge speed: Slow (TOT = 5.3 / 6ke-) Fast (TOT = 2.0 / 6ke-)
Test conditionsChip #279 + #281
Sensor 100×25 μm2
(150μm PT)
HV - 120 V
Temp. - 10 °C
Measurement combinations
Dominik Koukola
42
42
Time/ampl. measurements: “tornado”
LinearSynchronous DifferentialDominik Koukola
43Tornado time alignment
4.6
ns
Ernesto Migliore, Dominik Koukola
44Tornado time alignment
4.6
ns
Ernesto Migliore, Dominik Koukola
4.6 ns margin(=3 plot bins)reasonable marginto include● clock jitter● clock distribution
skew in chip● pix-to-pix variations● other effects
45Tornado time alignment
4.6
ns
: fraction of hits with correct BX assignedα
Ernesto Migliore, Dominik Koukola
46Tornado time alignment : fraction of hits with wrong BXβ
Ernesto Migliore, Dominik Koukola
47Tornado time alignment=1- - : fraction of hits lostγ α β
Ernesto Migliore, Dominik Koukola
48Comparison of RD53A front-ends
● Existing Linear FE (RD53A) shows significantly more late hits than SYNC and DIFF● Improvement with new design? We need to trust chip simulations!
Dominik Koukola
49Chip simulation validated
Measurement and simulation in good agreement: we can trust simulationDominik Koukola
50Comparison of front-ends
Fraction of mis-assigned pixel hits in the same ballparkDominik Koukola
51Out-of-time hit occupancy
β×estimated hit occupancy with occupancy information from TDR
Our noiserequirement
Dominik Koukola
52Fast rise time & comparator: resultsfeature impacts on affected detector performance
fast rise time & comparator hits correct BX assignment bandwidth + fake rate + hit resolution
fast return to baseline dead time efficiency (esp L1)
slow return to baseline TOT accuracy hit resolution
low noise hit rate fake hits bandwidth + fake rate (esp L4)
low detection threshold low-charge hit detection hit resolution + efficiency
low channel noise TOT accuracy hit resolution
The PreAmp+Comparator speed determines the late hit rate, that will especially impact bandwidthThe background of late hits is almost uniform in the tracker, with a rate 10¯⁴~10¯⁵/BXThe current design of the Linear has a larger fraction of late hits, but the designed improvement shows a much reduced late hit rate (similar to the other Front-Ends)Systematic errors in this estimation were also evaluated (see yesterday’s slides by Dominik)
53ConclusionsA considerable additional effort was was put by the designers into understanding and improving the existing designs. Also a large effort was put by the whole Task Force to characterize the designs and expected detector performance. The results show that these circuits could work with the foreseen improvements for our detector upgrade. The lowest risk option was selected, by identifying each design’s limitations in view of the detector performance:
– the differential front-end showed limitations in cold operation after irradiation, for which a mitigation has been devised, and in the operation with irradiated sensors in cold; our L1 working point of Q/TOT₈₀ = 1500 e¯ is at the end of the range in which the FE can be tuned; the FE has also other issues that are well understood and fixable, together with the best noise performance (orders of magnitude below the requirements). The Task Force deemed this option to be marginal w.r.t. our requirements of radiation tolerance and hit rates, notably for L1
– the synchronous front-end showed some better understood features (drift of the threshold) and some other that were not reproduced in the simulation (noise occupancy – although still below or similar to the irreducible late hit background of 10¯⁵) together with the best timing performance
– the linear front-end was identified by the original Front-End review (of Dec18-Jan19) as the lowest-risk option. The two drawbacks were addressed: the main drawback for this option was evidenced to be the slow timing response, with its corresponding impact on out-of-time hits (which is predicted by simulations to be solved in the next design iteration)
● Since all other arguments in favour of one or another front-end are not compelling, the task force has chosen the linear front-end for the integration in the next RD53 design for CMS (C-ROC)
54CROC