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Hsin-wei Tseng 233 Red Oak Dr E #F, Sunnyvale, CA 94086
[email protected], cell:+1(607)379-8566, Office:+1(408)717-6938, Google voice:+1(607)269-5018
https://www.linkedin.com/pub/hsin-wei-tseng/32/55a/b21
PROFILE
Research integration engineer for novel wafer process development for next generation
advanced magnetic sensor head for hard drive HDD and novel non-volatile memory (NVM) for
non-volatile computation.
Ph.D. in engineering physics in spin-transfer torque physics in MgO magnetic tunnel junction
material engineering (MTJ) and STT-MRAM measurement. Produce >150% MR in AJA
sputtering system.
Familiar with Matlab, JMP data analysis, Labview, MAC OS X, Linux for measurement
automation and data analysis.
Ph.D. experiment results power point: http://www.slideshare.net/hsinweitseng/hsinwei-job-talks
EDUCATION
Cornell University, Ithaca, NY 2006 – 2012
Ph.D. in Applied and Engineering Physics (experimental condensed matter physics) with Prof. Robert
A. Buhrman
University of Melbourne, Melbourne, Melbourne, Australia 2002-2003
Exchange Student
National Tsing Hua University, Hsinchu, Taiwan 2000-2004
Bachelor of Science in Physics
EXPERIENCE
HGST, inc (a Western Digital Company), San Jose, CA
10/2012-present, Research Staff Member,
Integration engineer, wafer process for novel devices for non-volatile memory (NVM). Led the
efforts for fast-track routing build for NVM project..
Ion mill engineer, develop novel reactive ion mill, and post ion mill oxidation for ultrathin
metal spacer for GMR and NVM.
Cornell Center for Materials Research (CCMR), Cornell University, Ithaca, NY
2006-2012 Graduate Research Assistant
Three Terminal Spin Hall Effect and STT-MRAM Device:
o Enable the three terminal spin hall device fabrication with lift-off PMMA/HSQ bilayer
E-beam resist for fast proto-typing nano device fabrication at Cornell MRAM device
testing for ultrafast spin-torque measurement.
Pulse-based spin-torque microwave excitation measurement,
o Establish a pulse-based microwave spectrum measurement to probe the spin-torque
excited microwave emission under high current densities.
o Observe highly asymmetric nanomagnet microwave dynamics under opposite current
polarities with pulse-based technique in CoFeB-based MgO MTJs.
o Applied to measure microwave excitation in three terminal high-impedance magnetic
switching devices based on Spin Hall effect.
Lift-off nanopillar fabrication process
o Established a HSQ/PMMA/omnicoat lift-off process to fabricate ~100nm scale
nanopillar with ~ 100% device yield.
o Simplified nanopillar fabrication and enabled the possibilities of more complicated
device structures, such as three terminal spin-torque devices and magnetic nanoparticle
tunnel junctions.
o Application of this process resulted in one publication and two presentations.
Developed low RA high TMR MgO nanopillar process
o Developed high TMR (~150%) wedged MgO MTJs process for fast-turn-around testing
for MR and RA to shorten MgO characterization time.
o Demonstrated that reliable and high quality CoFeB/MgO/CoFeB magnetic tunnel
junctions based on sputtering can be achieved with simple AJA sputtering systems.
Showed successful spin-torque switching in low RA high TMR MgO MTJs.
EXPERIMENTAL TECHNIQUES
Lithography: Electron-beam (JEOL9300, Vistec VB6), optical (projection and contact), CAD design
(LEdit) and fracturing software (Layout BEAMER).
Thin Film Deposition: DC and RF magnetron sputtering, ion beam deposition, thermal and electron
beam evaporation, chemical vapor deposition.
Thin film etching: Ion milling, reactive ion etching (plasma etching).
Nanocharacterization: AFM, SEM, XPS, STM, BEEM.
RF measurements: High frequency oscilloscope for time-domain and microwave spectrum
measurements, spin-torque based ferromagnetic resonance (ST-FMR).
Low and room temperature: Room, liquid nitrogen, and helium temperature measurement with RF
cryogenic probe station. Familiar with the use of Quantum Design PPMS system for AC, DC and
VSM measurement.
High vacuum: Maintenance of UHV system for in-situ scanning tunneling microscopy.
Computer: Matlab, SQL, QMF, JMP, Python, Linux.
PUBLICATIONS
“Spin torque switching with the giant spin Hall effect of tantalum”. Science 336 (2012) Liuqiao Liu,
Chi-feng Pai, Y. Li, H.W. Tseng, D.C. Ralph and R.A. Buhrman.
http://www.slideshare.net/hsinweitseng/liu-et-al-2012-spintorque-switching-with-the-giant-spin-hall-
effect-of-tantalum
“High voltage pulse-based spin-torque microwave excitation in MgO magnetic tunnel junction”. (in
preparation). H.W. Tseng, Yun Li, J.A. Katine, D.C. Ralph and R.A. Buhrman.
“Interface and oxide quality of CoFeB/MgO/Si tunnel junctions.” Journal of Applied Physics 111,
093908 (2012). Jonathan Shaw, H.W. Tseng, Shantanu Rajwade, Lieh-Ting Tung, R.A. Buhrman,
and Edwin C. Kan.
“Spin-torque switching in asymmetric FeCoB/MgO/FeNiB magnetic tunnel junctions.” (in
preparation) H.W. Tseng, J.C. Read, Y. Li, P.Y. Huang, J.J. Cha, D.A. Muller, D.C. Ralph and R.A.
Buhrman.
“High magnetoresistance tunnel junctions with Mg-B-O barriers and Ni-Fe-B free electrodes.”
Applied Physics Letters 94, 112504 (2009). J. C. Read, J. J. Cha, W. F. Egelhoff, H.W. Tseng, P. Y.
Huang, Y. Li, D. A. Muller & R. A. Buhrman.
“Atomic-scale spectroscopic imaging of CoFeB/Mg-B-O/CoFeB magnetic tunnel junctions” Applied
Physics Letters 95, 032506 (2009).J. J. Cha, J. C. Read, W. F. Egelhoff, Jr., P. Y. Huang, H.W.
Tseng, Y. Li, R. A. Buhrman, and D. A. Muller.
“Improvement of the low-frequency sensitivity of MgO-based magnetic tunnel junctions by
annealing.” Journal of Applied Physics 109, 113917 (2011) H. Duan, H.W. Tseng, Y. Li and R.B
van Dover.
CONFERENCE PRESENTATIONS
“Spin-Torque Switching in Asymmetric FeCoB/MgO/FeNiB Magnetic Tunnel Junction”. Presented
in IEEE International Magnetics Conference, Apr 25-29, 2011, Taipei Taiwan.
“High Voltage Pulse Measurements of Spin Torque Excited Microwave Emission and Switching in
Magnetic Tunnel Junction.” Presented in 56th MMM conference, Oct 30-Nov 3, 2011, Scottsdale,
AZ
PATENT
“Fabrication of Side-By-Side Sensors for MIMO Recording” (Filed)
“Structure and method for fabricating self-aligned leads and stabilized side shields for side by side
read sensors” (Filed)
“Method for single continuous integrated S2 and side shield deposition for 2D SEP reader process.”
(pending)
Self-recovery magnetic random access memory unit (pending).
REFERENCES
Prof. Robert A. Buhrman ([email protected])
Senior Vice Provost of Cornell University and Professor of Applied Physics at Cornell University.
Phone: (607)255-3732. Address: 222 Day Hall, Cornell University, Ithaca, NY 14853
Prof. Daniel C. Ralph ([email protected]) Horace White Professor of Physics at Cornell
University. Phone: (607)255-9644. Address: LASSP, Clark Hall, Physics Dept. Cornell University,
Ithaca NY 14853
Prof. Edwin C. Kan ([email protected]) Professor of Electrical and Computer Eng. at Cornell
University. Phone: (607)255-3998. Address: 227 Phillips Hall, Cornell University, Ithaca, NY 14853
Dr. Yang Li ([email protected]) Product manager at Supermicro. Phone (408)390-3915
