C R E E P O W E R P R O D U C T S 2 0 1 3

REVOLUTIONIZING POWER ELECTRONICS WITH SILICON CARBIDE

CENGIZ BALKAS

CREE VICE PRESIDENT AND GENERAL MANAGER,

POWER AND RF

“Our power MOSFET is the industry’s

first ‘ideal’ SiC high voltage switching device—

commercially available and ready for design-in

today. Together with our Schottky diodes, they

establish a new benchmark for SiC power

components that will replace silicon devices

in critical power electronics applications.”

DC/DC DC/AC

Cree, the silicon carbide expert, is leading the power semiconductor revolution.

Founded in 1987 and head-

quartered in Durham, NC, Cree

(Nasdaq: CREE) is one of the

fastest growing semiconductor

producers in the world.

Cree has the global reach and

distribution network to add

flexibility and support to serve

worldwide customer needs.

Cree has the manpower and

support to satisfy the market

demand for higher energy

efficiency power devices and

to develop a broad portfolio

of power electronic products.

Cree, an innovator of semiconductors for power and wireless applications,

lighting-class LEDs and LED lighting fixtures, is revolutionizing several industries

with its use of innovative silicon carbide (SiC) materials that provide high

efficiency and reliability for numerous semiconductor applications.

Using SiC as a platform material to develop new power electronics devices

that surpass the status quo, Cree is revolutionizing the industry. Cree’s product

families include power-switching devices, radio-frequency/wireless devices, blue

and green LED chips, high-brightness LEDs, lighting-class power LEDs and LED

fixtures and lamps.

With almost 25 years of SiC and GaN wide band gap material growth,

wafer processing and device experience, Cree is one of the world’s leading

manufacturers of SiC-based devices for power electronics and is the world’s

largest pure-play wide band gap device manufacturer. Leveraging the energy

efficiency of its materials technology, Cree power devices can deliver reduced

size, higher frequency operation and increased efficiency for multiple applica-

tions, including power supplies, solar inverters and industrial motor drives.

In use worldwide since 2002, Cree’s SiC power devices are a proven platform

for delivering efficiency and reliability. Cree’s pioneering power electronics

technology meets the demand for more efficient, more reliable and smaller

power supplies.

Cree has a technology roadmap for continuous improvement in SiC production

and cost reduction, as well as global reach and a strong IP portfolio to maintain

technology leadership. The time for SiC technology is now—don’t be left behind!

LIGHTING is one of many

mainstream applications that

will benefit from the adoption

of Cree SiC power devices. By

using the industry’s smallest SiC

package, lighting manufacturers

can reduce their overall system

size and cost while increasing

product performance, system

efficiency and reliability.

SERVERS, SOLAR AND TELECOM customers are currently benefitting from

Cree’s commercially available SiC power products. With energy efficiency a top priority,

these applications utilize the high frequency switching, high voltage operation and

high temperature capabilities that only SiC offers—performance that silicon can’t match.

PC POWER TRACTION

INDUSTRIAL POWER

HVAC MOTOR DRIVES

ELECTRIC VEHICLE AND CHARGING

INTRODUCTION: Providing commercially available SiC power solutions for applications where energy efficiency is a key requirement.

INNOVATION: Expanding the existing portfolio through continuous innovation, product development and streamlined manufacturing—reducing overall costs.

EXPANSION: Reducing manufacturing costs and a broader product portfolio are opening the door for mainstream adoption.

1

2

3

FROM HIGH-END

APPLICATIONS TO

MAINSTREAM ADOPTION

Driving innovation and adoption.

Industry-leading technology and service. That’s why Cree should be your power semiconductor partner.

Cree has a commitment to continued

product innovation and expansion of

infrastructure. The development of

the industry’s first 150mm SiC wafer

and investment in new fab capacity

demonstrates why Cree is a leader in

silicon carbide.

Why Cree? Because Cree has a foundation

that no one can match—the reasons

are clear.

Vertically integrated with an

unprecedented command of its

material supply, Cree is committed to

investing in and expanding its current

infrastructure and manufacturing capacity

to reduce the cost of SiC power devices.

Our goal is to provide the industry’s best

performing devices at the lowest system

cost for all applications.

Industry-leading power products and

dedicated SiC material supply are the

result of Cree’s long history, expertise and

intellectual property portfolio in the power

semiconductor world. As the SiC market

leader and the first company to produce 75mm, 100mm and now 150mm

SiC wafers, Cree has the unique position of producing more than 90% of

the world’s SiC wafers.

Well-stocked distribution channels and flexible manufacturing capabilities

allow Cree to provide the product and supply options that customers need, while

a large network of local Cree distributors as well as application and support

teams provide crucial design assistance and SiC expertise—something not many

competitors can say.

Built to outperform silicon products and competitors’ wide band gap devices,

Cree’s quality devices have established themselves in power supply and solar

inverter markets worldwide with more than 200 billion device hours in the field.

First 600V commercial SiC JBS Schottky diode

First 1200V SiC Schottky diode

Cree converts to 100mm SiC wafers— increasing yields and decreasing cost

Fraunhofer Institute demonstrates world’s best solar inverter efficiency (>98%) with Cree SiC devices

First 1700V SiC Schottky diodes

Cree demonstrates first 150mm SiC wafer

First 1200V SiC MOSFET

2002 2006 2007 2009 2010 2011

EXAMPLE:

SOLAR POWER INVERTERS

Broadest portfolio of voltages, current ratings and packages

Reduce losses— put power back on the grid

Higher power density

Proven reliability

FROM UTILITY SCALE TO MICRO-

INVERTERS, SiC INCREASES

EFFICIENCY AND RELIABILITY.

EXAMPLE:

500W POWER SUPPLY

Reduce size and weight

Reduce BOM

Increase operating frequency at equivalent efficiency

Increase reliability

Increase system airflow

SiC: When efficiency and reliability matter.

SiC-BASED 500W POWER SUPPLY

Industry’s only commercially available SiC MOSFET.

The Cree Z-FET™ 1200V SiC MOSFET is revolutionizing the power electronics industry by delivering

extremely fast switching speeds with ultra low switching losses, enabling engineers to achieve increased

levels of energy efficiency while reducing overall system size and weight. Easy to design-in and parallel

within a system, the industry’s first ideal SiC MOSFET also delivers low capacitance and reduces the size

of magnetics and filter components while significantly reducing cooling requirements.

Cu

mu

lati

ve F

ailu

re F

racti

on

Lifetime (yr) Projected to 175°C and +20V

Ramped TDDB at 175°C

0.8

0.98

0.5

0.2

0.10.05

0.02

1e+5 1e+6 1e+7 1e+8 1e+9

Lowest leakage current in the industry

Utilizing the optimal power semiconductor material, the

Cree Z-FET SiC MOSFET achieves minimal leakage current

at the rated blocking voltage over the complete operating

temperature range. The Cree SiC advantage results in

1/100th the leakage current of comparable Si IGBT and

MOSFET devices.

Comparison Conditions:

• VDS = 1200V

• TC (Case Temperature)

Range 25 – 150°C

Gate oxide reliability of 400 million years

—now that’s reliable

After extensive testing on thousands of Cree Z-FET SiC

MOSFETs, the TDDB test results (at 175°C) predict an MTTF

of approximately 400 million years at a gate voltage of

+20V. Cree’s innovation, engineering and manufacturing

expertise have overcome the issues with dielectric strength

and reliability of oxides on SiC.

Eff

icie

ncy

Peak Switch Current

99%

98%

97%

96%

95%

94%0 5

CMF20120D Si IGBTCMF10120D Si MOSFET

10 15 20 25

100%

SiC vs Si

3x the current at higher efficiency

25 50 75 100 125 1501E-9

1E-8

1E-7

1E-6

1E-5

1E-4

1E-3

1E-2

Si MOSFETCMF20120D Si IGBT

Leakag

e C

urr

en

t (A

)

TC (°C)

Industry-leading efficiency and power density

All conditions being equal, the Cree Z-FET 1200V SiC

MOSFET handles more power with higher efficiency than

competing silicon switches. High switching and conduction

losses limit comparable Si IGBT and MOSFET devices using

conventional silicon technology.

Comparison Conditions:

• Switching Frequency = 30 kHz

• Switch Voltage = 800V

• Duty Cycle = 50%

Average Current = 1/2 peak current

CMF20120D

VDS

= 1200V

RDS(ON)

= 80 mΩID(MAX)

= 42A

CMF10120D

VDS

= 1200V

RDS(ON)

= 160 mΩID(MAX)

= 24A

The Cree Z-FET™ 1200V SiC MOSFET

Visit www.cree.com/MOSFET to download the SPICE model and find out more about the industry’s first SiC MOSFET.

3 PHASE AC OUTDC IN

Increase power density up to 50% with SiC-

based inverters. Use fewer components,

reduce system size, complexity and overall

cost while delivering the industry’s highest

system efficiency and reliability.

SILICON THREE LEVEL INVERTER SILICON CARBIDE TWO LEVEL INVERTER

REVOLUTIONIZE YOUR POWER INVERTER DESIGN WITH CREE Z-FET™ SiC MOSFETs

Cree Z-Rec® Schottky diodes deliver the industry’s best silicon carbide performance, efficiency and product range.

With the industry’s largest silicon carbide product portfolio, Cree Z-Rec SiC Schottky diodes provide solutions for

many power applications in a wide range of packages, voltages and amperages that deliver the industry’s highest SiC

blocking voltage and switching frequency capability. Cree’s unique design advantages include a unipolar construction

that eliminates turn-off switching losses, a junction barrier that minimizes leakage current at high voltage and a merged

PIN design to enable extremely high surge current capability. Enhance your designs with the industry’s most innovative

power devices.

Scan this QR code to get the link to the Cree SiC Schottky

Diode QFN App Note sent straight to your inbox.

CREE SiC BARE DIE

FOR POWER MODULES

Take advantage of the ultra low

loss, high-frequency operation, zero

reverse recovery current, ultra fast

switching and positive temperature

coefficient with bare-die Cree SiC

diodes and MOSFETs.

Cree’s bare die power devices

(MOSFETs and Schottky diodes)

bring the advantages of SiC material

to power modules and microelectronic

assemblies. Motor drives, solar and

wind power inverters, switchmode

power supplies, UPS and induction

heating applications will benefit from

the performance, efficiency and

reliability of silicon carbide.

The LED lighting power solution

The Cree Z-Rec® QFN is the industry’s

smallest commercially available Schottky

diode at 3.3 x 3.3 x 1mm and is optimized

to solve thermal and EMI issues associated

with non-isolated LED lighting. By enabling

lower system temperatures with zero reverse

recovery, the QFN achieves higher system

efficiency and lower EMI in a package specifically designed for tight spaces.

The “silicon compromise” is a thing of the past.

High blocking voltages for high power applications

Achieving reverse-blocking voltages

above 1200V can require the use of

two silicon diodes, causing thermal

management, voltage isolation,

efficiency and EMI issues.

Cree Z-Rec® 1700V Schottky diodes

solve this problem by delivering the

industry’s highest blocking voltage

and zero reverse recovery in a discrete

package, enabling design engineers to

decrease component count and reduce

system size.

1700V 10A SiC Schottky vs 1700V 16A Si PIN Diode

4A for 40ns,Capacitive

Reverse Recovery Losses

T

3

20.0 A BW3 200ns 2.50GS/s10k points10.00 %T

Aux667mV

85A for 360ns,Recovery

Cree SiC Schottky diodes achieve zero reverse recovery, virtually eliminating diode switching losses and reducing overall system losses and EMI, while improving reliability.

CREE Z-REC SCHOTTKY DIODES

600V: 1,2,3,4,6,8,10,20A

650V: 4,6,8,10A

1200V: 2,5,8,10,15,20,30,40A

1700V: 10,25A

TO-263 TO-252 TO-220 TO-247

Cree Z-Rec Schottky diodes:

Improve system efficiency

Reduce system size

Increase system reliability

Simplify designs/circuitry

Shorten design cycles

Provide high frequency switching

Reduce switching losses

Improve EMI signatures

Lower system cost

CREE POWER PRODUCT SELECTOR GUIDE

C4D 05 120 E

Package Code

Voltage Rating

Amperage Rating

Three Digit Series

Cree Z-Rec SiC diodes

CPW5-1700-Z 050 BTop Metal

Amperage Rating

Aspect Ratio (Z= Square, Y=Rectangular)

Voltage Rating

Four Digit Series

Cree Z-Rec SiC diodes: Bare die

Cree Z-Rec® SiC Schottky diodes - Bare Die

Part Number Package Vrrm (V) If (A) [Max]TC = 150

If (A) [Max]TC = 100 QC (nC) Recommend for

New Designs?

CPWR-0600-S001B Bare Die 600 1 2.7 3.3 YES

CPW3-0600-S002B Bare Die 600 2 5.6 4.8 YES

CPW3-0600-S003B Bare Die 600 3 7.8 6.7 YES

CPW3-0600-S004B Bare Die 600 4 10.8 8.5 YES

CPW2-0600-S006B Bare Die 600 6 12.6 16 YES

CPW2-0600-S008B Bare Die 600 8 15.5 21 YES

CPW2-0600-S010B Bare Die 600 10 20.3 25 YES

CPW3-0650-S004B Bare Die 650 4 10.8 8.5 YES

CPW2-0650-S006B Bare Die 650 6 12.6 16 YES

CPW2-0650-S008B Bare Die 650 8 15.5 21 YES

CPW2-0650-S010B Bare Die 650 10 20.3 25 YES

CPW5-0650-Z050B Bare Die 650 50 YES NEW!

CPW4-1200-S002B Bare Die 1200 2 10 15 YES

CPW4-1200-S005B Bare Die 1200 5 13 34.5 YES

CPW4-1200-S008B Bare Die 1200 7.5 17.1 49 YES

CPW4-1200-S010B Bare Die 1200 10 22.9 66 YES

CPW4-1200-S015B Bare Die 1200 15 28.2 96 YES

CPW4-1200-S020B Bare Die 1200 20 33.8 130 YES

CPW2-1200-S050B Bare Die 1200 50 305 NO

CPW5-1200-Z050B Bare Die 1200 50 YES NEW!

CPW3-1700-S010B Bare Die 1700 10 20 70 YES

CPW3-1700-S025B Bare Die 1700 25 37 170 YES

CPW5-1700-Z050B Bare Die 1700 50 YES NEW!

Metal

RDS(ON) (mΩ)

Voltage Rating

Four Digit Series

CPM2-1700-0040 BCree Z-FET SiC MOSFETs: Bare die

C2M 0080 1200 D

Package CodeVoltage RatingRDS(ON) (mΩ)Three Digit Series

Cree Z-FET SiC MOSFETs

Cree Z-FET™ SiC MOSFETs

Part Number Package VDS (V)ID (A) [Max]TC = 25

ID (A) [Max]TC = 100

RDS(ON)

(mΩ)Qg (nC)

TJ(˚C)[Max]

Recommend for New Designs?

CMF10120D TO-247-3 1200V 24 13 160 47 135 YES

CPMF-1200-S160B Bare Die 1200V 28 18 160 47 150 YES

CMF20120D TO-247-3 1200V 42 24 80 90.8 135 YES

CPMF-1200-S080B Bare Die 1200V 50 30 80 90.8 150 YES

C2M0080120D TO-247-3 1200V 29 18 80 49 150 YES NEW!

CPM2-1200-0080B Bare Die 1200V 29 18 80 49 150 YES NEW!

CPM2-1200-0025B Bare Die 1200V 50 25 150 YES NEW!

C2M1000170D TO-247-3 1700V 2.7 4.4 1000 150 YES NEW!

CPM2-1700-0040B Bare Die 1700V 75 50 40 150 YES NEW!

Cree SiC Modules

Part Number Blocking Voltage (V) Current (A) (TC < 100) C Configuration Housing Recommend for New Designs?

CAS100H12AM1 1200V 105A Half-Bridge 50mm YES NEW!

Cree SiC Modules

CAS 100 H 12 A M 1 Switch Indicator

Switch Type

Housing

Voltage Rating Per Switch

Diode Current (H = Half, M = Marked Current)

Current Per Switch

Three Digit Series

Cree Z-Rec® SiC Schottky diodes

Part Number Package Vrrm (V)If (A) [Max]TC = 150

If (A) [Max]TC = 100

QC (nC)Recommend for New Designs?

CSD01060A TO-220 600 1 2.7 3.3 YES

CSD01060E DPAK (TO-252) 600 1 2.7 3.3 YES

C3D1P7060Q PQFN 600 1.7 3 5.6 YES

C3D02060A TO-220 600 2 5.6 4.8 YES

C3D02060E DPAK (TO-252) 600 2 5.6 4.8 YES

C3D02060F TO-220 (FPAK) 600 2 2.7 4.8 YES

C3D03060A TO-220 600 3 7.8 6.7 YES

C3D03060E DPAK (TO-252) 600 3 7.8 6.7 YES

C3D03060F TO-220 (FPAK) 600 3 3.3 6.7 YES

C3D04060A TO-220 600 4 10.8 8.5 YES

C3D04060E DPAK (TO-252) 600 4 10.8 8.5 YES

C3D04060F TO-220 (FPAK) 600 4 4 8.5 YES

C3D06060A TO-220 600 6 12.6 16 YES

C3D06060G D2PAK (TO-263) 600 6 12.6 16 YES

C3D06060F TO-220 (FPAK) 600 6 4.5 16 YES

C3D08060A TO-220 600 8 15.5 21 YES

C3D08060G D2PAK (TO-263) 600 8 15.5 21 YES

C3D10060A TO-220 600 10 20.3 25 YES

C3D10060G D2PAK (TO-263) 600 10 20.3 25 YES

C3D16060D TO-247 600 16 32 42 YES

C3D20060D TO-247 600 20 40 50 YES

C3D04065A TO-220 650 4 10.8 8.5 YES

C3D06065A TO-220 650 6 12.6 16 YES

C3D08065A TO-220 650 8 15.5 21 YES

C3D10065A TO-220 650 10 20.3 25 YES

C3D10065I Isolated TO-220-2 650 7 10 25 YES NEW!

C4D02120A TO-220 1200 2 8.6 15 YES

C4D02120E DPAK (TO-252) 1200 2 10 15 YES

C2D05120A TO-220 1200 5 11 28 NO

C4D05120A TO-220 1200 5 10.9 34.5 YES

C4D05120E DPAK (TO-252) 1200 5 13 34.5 YES

C4D08120A TO-220 1200 7.5 15.9 49 YES

C4D08120E DPAK (TO-252) 1200 7.5 17.1 49 YES

C2D10120A TO-220 1200 10 18 61 NO

C2D10120D TO-247 1200 10 23 56 NO

C4D10120A TO-220 1200 10 18.7 66 YES

C4D10120D TO-247 1200 10 23.6 69 YES

C4D10120E DPAK (TO-252) 1200 10 22.9 66 YES

C4D15120A TO-220 1200 15 28.2 96 YES

C2D20120D TO-247 1200 20 46.6 122 NO

C4D20120A TO-220 1200 20 33.8 130 YES

C4D20120D TO-247 1200 20 43 66 YES

C4D30120D TO-247 1200 30 60 192 YES

C4D40120D TO-247 1200 40 77.2 130 YES

C3D10170H TO-247-2 1700 10 20 70 YES

C3D25170H TO-247-2 1700 25 37 170 YES

4600 Silicon Drive

Durham, NC 27703

Phone: (919) 407-7888

US Toll Free: (800) 533-2583

Fax: (919) 407-5451

powersales@cree.com

www.cree.com/power

Scan this QR code to get the link to sign up for Cree’s

free “Designing with Cree’s SiC MOSFETs” webinar sent

directly to your inbox.

Copyright © 2013 Cree, Inc. All rights reserved. This document is provided for informational purposes only and is not a warranty or specification. The information in this document is subject to change without notice. Cree, the Cree logo and and Z-Rec are registered trademarks and Z-FET is a trademark of Cree, Inc.

Published February 2013

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