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Dec 2015 P.Gargini RC4
Paolo Gargini
Chairman ITRS2.0
Fellow IEEE, Fellow I-JSAP Intel Fellow (1995-2012)
Roadmap Benefits Past, Present and
Future
1
Dec 2015 P.Gargini RC4
International Electron Device Meeting, December 1975
Second Update of Moore’s Law
2
4
7
9
13
1
3
5 6
8
10 11 12
14 15 16
0
19 18 17
20
1961
1959
19
60
1962
19
63
1964
19
65
1966
19
67
1968
19
69
1970
19
71
1972
19
73
1974
19
75
1976
19
77
1978
19
79
1980
1965
1975
Log 2
of t
he n
umbe
r of
com
pone
nts p
er in
tegr
ated
func
tion
Year
2X/Year
2X/2Year
2
Dec 2015 P.Gargini RC4 3
Moore’s Law and Dennard’s Scaling Laws Convergence
50% AREA READUCION GENERATION TO GENERATION
50%
=> 30% LINEAR FEATURE REDUCTION
S=0.7
Dec 2015 P.Gargini RC4
IC Industry at a Glance (1975-2003)
Driver Cost/transistor -> 50% Reduction
How 2x Density/2 years (Moore)
Method Geometrical Scaling (Dennard)
5
Dec 2015 P.Gargini RC4
Gate Dielectric Scaling
1
2
3 To
x eq
uiva
lent
(nm
)
4 8 12
Monolayers
4
0
1999
2001
2003
2005
1997 NTRS
You Are Here!
Silicon substrate
1.2nm SiO2
Gate
6
From My Files
Dec 2015 P.Gargini RC4
Tutorial for SEMI P.Gargini
1998 ITRS Update
• Participation extended to: EECA, EIAJ, KSIA, TSIA at WSC on April 23,1998
• 1st Meeting held on July 10/11,1998 in San Francisco
• 2nd meeting held on December 10/11,1998 at SFO• 50% of tables in 1997 NTRS required some changes• 1998 ITRS Update posted on web in April 1999
8
Dec 2015 P.Gargini RC4
The Ideal MOS Transistor
From My Files
Fully Surrounding Metal Electrode
High-K Gate Insulator
Fully Enclosed, Depleted Semiconductor
Low Resistance Source/Drain
Drain Source Metal Gate Insulator
Band Engineered Semiconductor
11
Dec 2015 P.Gargini RC4
IC Industry at a Glance (2003->2021)
Driver Cost/transistor-> 50% Reduction
How 2x Density/2 years (Moore)
Method Equivalent Scaling ( ITRS1.0)
12
Dec 2015 P.Gargini RC4
Incubation Time n Strained Silicon
• 1992->2003 n HKMG
• 1996->2007 n Raised S/D
• 1993->2009 n MultiGates
• 1997->2011 ~ 12-15 years
Drain Source Metal Gate Insulator
1998
15
Dec 2015 P.Gargini RC4
NRI Funded Universities Finding the Next Switch
UC Los Angeles C Berkeley UC Irvine UC Sana Barbara Stanford U Denver Portland State U Iowa
Notre Dame Purdue Illinois-UC Penn State Michigan UT-Dallas Cornell GIT
UT-Austin Rice Texas A&M UT-Dallas ASU Notre Dame U. Maryland NCSU Illinois UC
Columbia Harvard Purdue UVA Yale UC Santa Barbara Stanford Notre Dame U. Nebraska/Lincoln U. Maryland Cornell Illinois UC Caltech UC Berkeley MIT Northwestern Brown U Alabama
SUNY-Albany GIT Harvard Purdue RPI Columbia Caltech MIT NCSU Yale UVA
Over 30 Universities in 20 States
SPIN
TUNNEL FET
GRAPHENE SPIN LOGIC
GRAPHENE
16
Dec 2015 P.Gargini RC4
5
7
10 Te
chno
logy
Nod
e (n
m)
2017 2015 2013
14
2019
2013 ITRS 19
2021
3
1
Technology Node Scaling Today’s Challenge
Dec 2015 P.Gargini RC4
IC Industry at a Glance (2021->203X)
Driver Cost/transistor & power reduction
How 2x Density/2 years (Moore)
Method 3D Power Scaling (ITRS2.0)
23
Dec 2015 P.Gargini RC4
The Different Ages of Scaling (Different methods for different times)
① Geometrical Scaling (1975-2003) ① Reduction of horizontal and vertical physical dimensions in
conjunction with improved performance of planar transistors
② Equivalent Scaling (2003~2021) ① Reduction of only horizontal dimensions in conjunction with
introduction of new materials and new physical effects. New vertical structures replace the planar transistor
③ 3D Power Scaling (2021~203X) ① Transition to complete vertical device structures.
Heterogeneous integration in conjunction with reduced power consumption become the technology drivers
24
Dec 2015 P.Gargini RC4
More Moore Beyond Moore
More than Moore
Heterogeneous Integration
System Integration
Customized Functionality O P S Y S T E M
A P P L E T S
Outside System Connectivity
Beyond 2020
ITRS 2012
25
Dec 2015 P.Gargini RC4
1991 Micro Tech 2000 Workshop Report
1994NTRS 1992NTRS 1997NTRS
21th Anniversary of TRS
Japan Korea Europe Taiwan USA
http://www.itrs2.net
2001 ITRS 1999 ITRS 1998 ITRS Update
2000 ITRS Update
2002 ITRS Update
2004 ITRS Update
2006 ITRS Update 2003 ITRS 2005 ITRS 2007 ITRS
2008 ITRS Update
2010 ITRS Update 2009 ITRS 2012 ITRS
Update 2011 ITRS
2013 ITRS
26
Dec 2015 P.Gargini RC4
Q: How do we get back to exponential performance scaling?
IEEE Rebooting Computing Initiative
29
Dec 2015 P.Gargini RC4
NTRS
End of Traditional Scaling in Sight
ITRS 1.0
Equivalent Scaling Research
3D Power Scaling
NNI
International
US Initiatives
Launch of USG Nanotechnology
Launch of Eu/Japan Nanotechnology
Agreement on US research coordination
NRI
INC
Yearly Conference on Nano Eu/Japan/US
Equivalent Scaling Goes into
Production
Global Semiconductor Industry
High-k/Metal Gate. FinFET
ITRS 2.0
1997 1998 2003 2007 2011 ~2021 2000 2005 2015
Moore’s Law Continues
Continuous Scaling
International Nanotechnology Investments
FCRP
31