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Robu st Low Powe r VLSI Robust Low Power VLSI A Charge Pump Based Receiver Circuit to Reduce Interconnect Power Dissipation Aatmesh Shrivastava

Robust Low Power VLSI R obust L ow P ower VLSI A Charge Pump Based Receiver Circuit to Reduce Interconnect Power Dissipation Aatmesh Shrivastava

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Page 1: Robust Low Power VLSI R obust L ow P ower VLSI A Charge Pump Based Receiver Circuit to Reduce Interconnect Power Dissipation Aatmesh Shrivastava

Rob

ust

Low

Power

VLSI

Robust

LowPower

VLSI

A Charge Pump Based Receiver Circuit to Reduce Interconnect Power Dissipation

Aatmesh Shrivastava

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VLSI 2

Processor Power

• Power of CPU has been increasing with CMOS scaling.

• Reduced battery life and reliability issues due to heating.

• Design techniques needed to stop this trend.

Source Intel

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Power Components in a chip

• Leakage Power= VDD* IL, Dominates when idle.

• Switching Energy= C*VDD2, Dominates when active.

• In this talk we focus on reducing switching energy.

IL

C

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Interconnect Energy

• Energy= α(CT+CW)VDD2

• CT is device cap & CW is the wire cap

• Traditionally CT >> CW • With scaling device became smaller and CT~CW

• Significant energy is wasted in parasitic wires.

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Interconnect Power Magen et. al.

• Interconnect accounts for >50% of power in a modern microprocessor [2].

• In this paper we present circuit technique to reduce this power/energy.

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Outline Reducing Interconnect energy through voltage

scaling. Driver Design Receiver

Literature Review Proposed Interconnect Receiver

Charge Pump Proposed Circuit

Results Energy Savings in a Processor

6

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Voltage Scaling for interconnects

• Interconnects run at VDDI, Energy= α(CT*VDD2 +CW*VDDI

2 ) • VDDI< VDD will save energy.

• Driver converts VDD level signal to VDDI while receiver converts VDDI to VDD signal

• Logic runs at rated VDD, wires at reduced VDDI

• Key tradeoff :- Performance overhead vs Power.

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Driver

• Asymmetric source follower driver [4]

• Two NMOS transistors are used at output stage

• A signal at logic level ( 1V) is converted to a signal interconnect level (0.3V)

• We use this driver in our proposed interconnect circuit.

1

ON

OFFON

OFF

0

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Single Ended Receiver• Receiver Design plays an important role in power

performance trade-off.

• Receiver converts the signal at interconnect level back to the logic level

• Poor performance, VDDI > 2*VT.

VDDI ON

0OFF

ON

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PPA : Power Performance Prior Art

• In prior art either energy saving is less or performance is poor.

Schemes B/W (Ghz)

Swing (V)

Normalized Energy

Basic ( no scaling) >1 1 1

Single-ended [4,5,7] <0.25 0.6 0.6

Differential [8-10] >1 0.05 0.8

Capacitive [6] <0.25 0.05 0.2

Page 11: Robust Low Power VLSI R obust L ow P ower VLSI A Charge Pump Based Receiver Circuit to Reduce Interconnect Power Dissipation Aatmesh Shrivastava

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Delay vs Energy/bit : Prior Art

• Existing solutions do not address power and performance in conjunction.

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Proposed receiver ckt

• Charge-pump is used.

• It boosts the signal to three times the interconnect swing

• Good performance and much lower power

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Charge Pump : Working principle

Two buckets with water at height h.

Water level in bucket rises

Q Q

Two caps with Charge QQ=CV

If the charge of one cap is dumped on another

2Q

2Q=CV1, so V1=2Q/C=2*V

• Charge pump is a circuit that does this charge transfer.

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Charge Pump : To increase swing

• Switches φ1 and φ2 close at non-overlapping time• When φ1 closes, 1 gets charged to VDDI, When φ2 2

gets charged to VDDI and so 1 goes to VDDI

• Circuit boosts the signal 2 times here.

1

2 2

1

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Proposed receiver ckt

• Charge-pump is used.

• It boosts the signal to three times the interconnect swing

• Good performance and much lower power

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VLSI 16

Simulation results

• Reduced swing interconnect signal gets reconstructed with good performance.

IN OUT

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VLSI 17

Delay vs Energy/bit

• Proposed Solution gives very good performance and very low energy.

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Energy savings in a processor

• 4-core Alpha processor was simulated using m5 simulator

• Data bus b/w L1-L2 cache is long, power consuming interconnect.

Long Interconnect

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Energy savings in a processor

• Data-Bus of alpha was implemented using differential, basic and proposed interconnect circuit.

• Over the set of splash benchmarks, the proposed interconnect saves up to 70% of energy.

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PPA : Power Performance Area

• Novel interconnect circuit has very good PPA metric

Schemes B/W (GHz)

Swing (V)

Norm. Energy Area of 1 repeater

Basic >1 1 1 2X

Single Ended [4,5,7]

<0.25 0.6 0.6 15-24X

Differential [8-10]

>1 0.05 0.8 100-250X

Capacitive [6] <0.25 0.05 0.2 NA

This Work >1 0.3 0.3 22X

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Thank You

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References1. P. Kogge, K. Bergman, S Borka, et. al, “ExaScale Computing Study: Technology Challenges in Achieving Exascale Systems”

DARPA/IPTO, September 2008 2. D. Liu and C. Svensson, “Power Consumption Estimation in CMOS VLSI chips” IEEE Journal of Solid-State Circuits, Vol-29

No-6, June 1994. 3. E. Kusse and J.M. Rabaey, “Low-Energy Embedded FPGA Structures” IEEE International Symposium on Low Power

Electronics Design, August 1998 . 4. H. Zhang, V. George and J.M. Rabaey, “Low-Swing On-Chip Signalling Techniques: Effectiveness and Robustness” IEEE

Transactions on Very Large Scale Integration (VLSI), Vol-8 No-3, June 2000 5. J.C.G. Montesdeoca, J.A. Montiel-Nelson and S. Nooshabadi, “CMOS Driver Receiver Pair for Low Swing Signalling for Low

Energy On-chip Interconnects” IEEE Transactions on Very Large Scale Integration (VLSI), Vol-17 No-2, February 2009. 6. R. Ho, I. Ono, F. Liu, A. Chow, J. Schauar and R. Drost, “High Speed and Low Energy capacitively driven wires” IEEE

International Solid State Circuits Conference, February 2007.7. M. Ferretti and P.A. Beere “Low Swing Signaling Using a Dynamic Diode-Connected Driver” European Solid-State Circuits

Conference, September 2001. 8. A. Narshimha, M. Kasotiya and R. Sridhar “A Low-Swing Differential signaling Scheme for on-chip Global Interconnects”

International Conference on VLSI Design, January 2005.9. N. Tzartzanis, W.W. Walker “Differential Current Mode Sensing for Efficient On-Chip global Signaling” IEEE Journal of Solid

State Circuits, Vol-40 No-11, November 2005.10. H. Ito, M. Kimura, K. Miyashita, T. Ishii, K. Okada and K. Masu, “A Bidirectional and Multidrop Transmission Line

Interconnect for Multipoint to Multipoint On-Chip Communication” IEEE Journal of Solid State Circuits, Vol-43 No-4, April 2008.

11. V. Alder and E.G. Friedman, “Repeater Design to Reduce Delay and Power in Resistive Interconnects”. IEEE Transactions on Circuits and Systems-II, Vol-45 No-45, May 1998.

12. P.E. Allen and D.R. Holberg., “CMOS Analog circuit design” Oxford Press 2002.13. R.E. Kessler, E.J. McLellan and D.A. Webb, “The Alpha 21264 Microprocessor Architecture” International Conference on

Computer Design, October 1998.14. N.L. Binkert, R.G. Dreslinski, L.R. Hsu, K.T. Lim, A.G. Saidi and S.K. Reinhardt, “The M5 Simulator: Modeling Networked

Systems” IEEE Micro, July 2006.

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VLSI 23

Back Up

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VLSI 24

More Plots

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VLSI 25

Charge Pump

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VLSI 26

Pulse Generator

Page 27: Robust Low Power VLSI R obust L ow P ower VLSI A Charge Pump Based Receiver Circuit to Reduce Interconnect Power Dissipation Aatmesh Shrivastava

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VLSI 27

Proposed Circuit

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Timing diagram

φ2

φ1

CVT

1V-VT

VT

OUT0V

1V

1V

0V

B

A0.3V

0.6V

0V

-0.3V

0.3V

0V

0.3V

1V

1V

IN

TCRIT TCRIT

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Differential Receiver

• Output can swing from VDD to VDD-IR. If I/R is large signal can reach full swing.

• It also converts low swing to high swing

• Good Performance.

• Two wires/bit and static current :Power Overhead.

StrongWeak