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The new technology era has a huge impact on Non-Volatile Memory (NVM), demanding memories with faster speed and higher storage capacity. Manufacturers have therefore channeled investment into the development of new NVMs with more memory cells in a single chip. Samsung continues to dominate the semiconductor industry, including the memory industry, as shown by the magnificent $22 billion revenue in 2018 generated by its NAND memory business. Its manufacturing techniques change from one generation to another to produce reliable memory chips with higher capacity. This report presents a detailed technology study of the latest Samsung 3D Vertical- NAND memory made with 92-Layer word lines. Thanks to high quality optical images and high-resolution scanning electron microscope (SEM) images, the physical analysis shows details of die cross sections, including material identification. The report includes a detailed process to better understand the major fabrication steps. It also includes a cost estimation of producing Samsung’s new generation 3D NAND chips and the packaging cost. Finally, this report features a comparison of Samsung’s previous NVM generation with the latest generation. This identifies the different and similar features in the two generations, and compares the fabrication cost and the impact of the added layers. COMPLETE TEARDOWN WITH Detailed optical and SEM photos and cross-sections Precise measurements Material analysis Manufacturing process flow Supply chain evaluation Manufacturing cost analysis Comparison of 92-layer with 64-layer V-NAND Estimated sales price Fifth generation 3D NAND memory chip reveals Samsung’s latest memory technology and fabrication methods. REVERSE COSTING® – STRUCTURE, PROCESS & COST REPORT Title: Samsung 3D V-NAND 92-Layer Memory Pages: 100 Date: September 2019 Format: PDF & Excel file Price: EUR 3,990 Samsung 3D V-NAND 92-Layer Memory IC – LED – RF – MEMS – IMAGING – PACKAGING – SYSTEM – POWER - MEMORY - DISPLAY

Samsung 3D V-NAND 92-Layer Memory · 2019. 9. 17. · Samsung, SK Hynix and Intel/Micron. December 2018 - EUR 4,990* Toshiba SanDisk 64 Layers 3D NAND Memory The latest 3D NAND Flash

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Page 1: Samsung 3D V-NAND 92-Layer Memory · 2019. 9. 17. · Samsung, SK Hynix and Intel/Micron. December 2018 - EUR 4,990* Toshiba SanDisk 64 Layers 3D NAND Memory The latest 3D NAND Flash

The new technology era has a huge

impact on Non-Volatile Memory (NVM),

demanding memories with faster speed

and higher storage capacity.

Manufacturers have therefore channeled

investment into the development of new

NVMs with more memory cells in a single

chip.

Samsung continues to dominate the

semiconductor industry, including the

memory industry, as shown by the

magnificent $22 billion revenue in 2018

generated by its NAND memory business.

Its manufacturing techniques change from

one generation to another to produce

reliable memory chips with higher

capacity.

This report presents a detailed technology

study of the latest Samsung 3D Vertical-

NAND memory made with 92-Layer word

lines. Thanks to high quality optical

images and high-resolution scanning

electron microscope (SEM) images, the

physical analysis shows details of die cross

sections, including material identification.

The report includes a detailed process to

better understand the major fabrication

steps. It also includes a cost estimation of

producing Samsung’s new generation 3D

NAND chips and the packaging cost.

Finally, this report features a comparison

of Samsung’s previous NVM generation

with the latest generation. This identifies

the different and similar features in the

two generations, and compares the

fabrication cost and the impact of the

added layers.

COMPLETE TEARDOWN WITH

• Detailed optical and SEM photos and

cross-sections

• Precise measurements

• Material analysis

• Manufacturing process flow

• Supply chain evaluation

• Manufacturing cost analysis

• Comparison of 92-layer with 64-layer

V-NAND

• Estimated sales price

Fifth generation 3D NAND memory chip reveals Samsung’s latest memorytechnology and fabrication methods.

REVERSE COSTING® – STRUCTURE, PROCESS & COST REPORT

Title: Samsung 3D V-NAND 92-Layer Memory

Pages: 100

Date: September 2019

Format: PDF & Excel file

Price: EUR 3,990

Samsung 3D V-NAND 92-Layer Memory

IC – LED – RF – MEMS – IMAGING – PACKAGING – SYSTEM – POWER - MEMORY - DISPLAY

Page 2: Samsung 3D V-NAND 92-Layer Memory · 2019. 9. 17. · Samsung, SK Hynix and Intel/Micron. December 2018 - EUR 4,990* Toshiba SanDisk 64 Layers 3D NAND Memory The latest 3D NAND Flash

TABLE OF CONTENTS

Overview/Introduction

• Executive Summary

• Reverse Costing Methodology

Samsung Company Profile

Market Analysis

• NAND Flash Market Revenue

• NAND Market Shipments

• Samsung NAND Flash RoadMap

Physical Analysis

• Synthesis of the Physical Analysis

• Physical Analysis Methodology

• 970 EVO Plus SSD Teardown

• Package View and Dimensions

• Memory Die

View, dimensions & marking

Cross-section

Contacts and metallization

• 3D NAND Patents

Manufacturing Process Flow

• Overview

AUTHORS

• Fab Unit

• Process Flow

Cost Analysis

• Summary of the Cost Analysis

• Yields Explanation & Hypotheses

• Memory 3D 92-Layer

Memory front-end cost

Memory front-end cost per process steps

• Process Steps

• Component

Bonding front-end cost

Memory wafer & die cost

Back-end: Final test cost

Memory 3D 92-layer component cost

Selling Price

Comparison between Samsung 92-Layer and 64-Layer V-NAND

SAMSUNG 3D V-NAND 92-LAYER MEMORY

RELATED REPORTS

Leading-edge 3D NAND Memory Comparison 2018A deep technology analysis and cost comparison report on cutting edge 3D NAND memory chips from Toshiba/SanDisk, Samsung, SK Hynix and Intel/Micron.December 2018 - EUR 4,990*

Toshiba SanDisk 64 Layers 3D NAND MemoryThe latest 3D NAND Flash memory produced by Toshiba and SanDisk for the IPhone X.November 2018 - EUR 3,990*

NAND Service –Memory ResearchNAND market downturn continues into early 2019, with recovery expected in the second half.June 2019 - EUR 30,000*

Belinda Dube is working for SystemPlus Consulting as Analyst inSemiconductor Memories andIntegrated Circuits. She holds aMasters degree in Nano Scienceand Nanotechnologies from EcoleCentral Lyon and INSA Lyon.

Véronique Le Troadec has joinedSystem Plus Consulting as alaboratory engineer. Coming fromAtmel Nantes, she has extensiveknowledge in failure analysis ofcomponents and in deprocessing ofintegrated circuits.

Page 3: Samsung 3D V-NAND 92-Layer Memory · 2019. 9. 17. · Samsung, SK Hynix and Intel/Micron. December 2018 - EUR 4,990* Toshiba SanDisk 64 Layers 3D NAND Memory The latest 3D NAND Flash

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Page 4: Samsung 3D V-NAND 92-Layer Memory · 2019. 9. 17. · Samsung, SK Hynix and Intel/Micron. December 2018 - EUR 4,990* Toshiba SanDisk 64 Layers 3D NAND Memory The latest 3D NAND Flash

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Page 5: Samsung 3D V-NAND 92-Layer Memory · 2019. 9. 17. · Samsung, SK Hynix and Intel/Micron. December 2018 - EUR 4,990* Toshiba SanDisk 64 Layers 3D NAND Memory The latest 3D NAND Flash

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