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Scott R. Messenger, Ph.D.US Naval Research Laboratory, Washington, DC
[email protected]‐767‐7360
Space Solar Cell Radiation Damage Modelling
“Prediction is very difficult, especially if it’s about the future.”
-Niels BohrDanish physicist (1885 - 1962)
*Taken from M. Xapsos, NSREC 2008
Space Radiation and Effects
Outline1. Motivation2. The Space Radiation Environment3. Solar Cell Space Radiation
Degradation Modeling-JPL Equivalent Fluence (EQFLUX)-NRL Displacement Damage Dose (SCREAM)
4. Radiation Damage in Multijunction Solar Cells
Motivation• Provide space solar cell community an alternate
method for cell level degradation analyses• Heritage method (JPL EQFLUX) requires several
ground test energies• Electrons (0.6, 1, 12 MeV)• Protons (0.02, 0.05, 0.1, 0.3, 1, 3, 10 MeV)
• Alternate Method (NRL Displacement Damage Dose, DDD) needs significantly less ground data
• Electrons (1, >2 MeV)• Protons (>1 MeV)
• AIAA S-111-2005 Space Solar Cell Qualification (Sects. 8.1 & 8.2) have been modified to include NRL DDD model as primary which can save about $150K in future space cell qualifications
Problem• To generate ground irradiation data necessary to predict
the effect of a particle spectrum (as that found in space) on a solar cell in orbit
• This is accomplished by reducing all of the ground data to a characteristic data set
Electron and Proton Fluence Data (GaAs/Ge, 1991)
108 109 1010 1011 1012 1013 1014 1015 1016 10170.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Nor
mal
ized
Max
imum
Pow
er 1 Sun, AMOGaAs/Ge
Particle Fluence (cm-2)
Protons
Electrons0.6 MeV1 MeV2.4 MeV12 MeV
9.5 MeV3 MeV1 MeV0.5 MeV0.3 MeV0.2 MeV0.1 MeV0.05 MeV
25oC
Solution• We want all data to collapse to a common basis• The JPL method uses an equivalent 1 MeV electron fluence• The NRL Method uses the displacement damage dose
JPL Data Collapse
108 109 1010 1011 1012
Displacement Damage Dose (MeV/g)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Nor
mal
ized
Max
imum
Pow
er 1 Sun, AM0T=25oC
GaAs/Ge
0.6 MeV1 MeV2.4 MeV12 MeV
Protons Electrons9.5 MeV3 MeV1 MeV0.5 MeV0.3 MeV0.2 MeV
1 MeV equiv.Neutrons
NRL Data Collapse
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E+11 1.E+12 1.E+13 1.E+14 1.E+15 1.E+16 1.E+17
Equivalent 1 MeV Electron Fluence (cm-2)
Nor
mal
ized
Pm
ax
200keVp
300keVp
500keVp
1MeVp
3MeVp
9.5MeVp
12 MeV
2.4MeVe
1MeVe
600keVe
Proton Fit
Electron Fit
GaAs/Ge
Outline1. Motivation2. The Space Radiation Environment3. Solar Cell Space Radiation
Degradation Modeling-JPL Equivalent Fluence (EQFLUX)-NRL Displacement Damage Dose (SCREAM)
4. Radiation Damage in Multijunction Solar Cells
Space Radiation Environment
• Omnidirectional• Continuous Energy Spectrum• Multi-particle (light and heavy ions, neutrons?)
p+
COVERGLASS
SUBSTRATE
ACTIVE CELL
PANEL
p+
e-
e-
e-
e-
e-
p+
p+
p+
p+
p+
p+
COVERGLASS
SUBSTRATE
ACTIVE CELL
PANEL
p+
e-
e-
e-
e-
e-
p+
p+
p+
p+
p+
COVERGLASS
SUBSTRATE
ACTIVE CELL
PANEL
p+
e-
e-
e-
e-
e-
p+
p+
p+
p+
p+
protonselectrons
Space Radiation Environment
• Omnidirectional• Continuous Energy Spectrum• Multi-particle (light and heavy ions, neutrons?)
p+
COVERGLASS
SUBSTRATE
ACTIVE CELL
PANEL
p+
e-
e-
e-
e-
e-
p+
p+
p+
p+
p+
p+
COVERGLASS
SUBSTRATE
ACTIVE CELL
PANEL
p+
e-
e-
e-
e-
e-
p+
p+
p+
p+
p+
COVERGLASS
SUBSTRATE
ACTIVE CELL
PANEL
p+
e-
e-
e-
e-
e-
p+
p+
p+
p+
p+
protonselectrons
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
0 1 2 3 4 5 6 7
L Shell Value
AE8
MIN
Inte
gral
Flu
x >
E (e
lec/
cm2 /s
)0.040.10.20.30.40.50.60.70.811.251.51.7522.252.52.7533.253.53.7544.254.54.7555.566.57
AE8MIN Electron Spectra (Static)MeV
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
0 1 2 3 4 5 6 7
L Shell Value
AP8
MIN
Inte
gral
Flu
x >
E (p
rot/c
m2 /s
)0.10.150.20.30.40.50.60.711.52345671015203040506070100150200300400
AP8MIN Proton Spectra (Static)MeV
Space Radiation Spectra
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
0.1 1 10 100 1000Proton Energy (MeV)
Inte
gral
Flu
ence
(cm
-2)
AP8MINAP8MAXCRRESPRO QuietCRRESPRO ActivePSB97Solar Protons
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
0.1 1 10 100 1000Proton Energy (MeV)
Diff
eren
tial F
luen
ce (c
m-2
MeV
-1)
AP8MINAP8MAXCRRESPRO QuietCRRESPRO ActivePSB97Solar Protons
1100 km, circular, 63o, 1 year duration
Integral Spectra Differential Spectra
*The space radiation spectra is generally considered accurate to ~2X. This is the dominant error source for any degradation analysis leading to …… MARGIN!!!!
What is a Coronal Mass Ejection?
Space Weather - Solar Proton Event Data October 19, 1989 Event
10/1
9/19
89
10/2
1/19
89
10/2
3/19
89
10/2
5/19
89
10/2
7/19
89
10/2
9/19
89
10/3
1/19
89
11/2
/198
9
11/4
/198
9
11/6
/198
9
11/8
/198
9
11/1
0/19
89
11/1
2/19
89
Date & Time
10-6
10-5
10-4
10-3
10-2
10-1
100
101D
iffer
entia
l Flu
x (c
m-2
s-1sr
-1M
eV-1
)
GOES-7 SEMIMP-8 GME
121-154 MeV Protons
Electron and Proton Radiation Environment
*The present radiation environment models are known to have an accuracy of at least a factor of 2. AP(E)9 will greatly update the environment data. A beta version has been created in May, 2010. The NASA Radiation Belt Storm Probe (RBSP) experiment (launch in 2012) is expected to greatly enhance the understanding.
Any model is only good to the data that is given!
(CEASE data onboard TSX5, DSP21, HEO and ICO Satellites)
1.E‐06
1.E‐05
1.E‐04
1.E‐03
1.E‐02
1.E‐01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
0.01 0.1 1 10
Averaged
Integral Flue
nce by
Year
(e‐ /cm
2 /sec)
Electron Energy (MeV)
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
All data0.0
0.5
1.0
1.5
2.0
2.5
1.E‐02 1.E‐01 1.E+00 1.E+01
Electron Energy (MeV)
AE8MIN/AE8MAX
SV41/AE8MAX
GPS Environment Data (LANL)
1.0E+09
1.0E+10
1.0E+11
1.0E+12
12/10/2000
12/10/2001
12/10/2002
12/10/2003
12/10/2004
12/10/2005
12/10/2006
12/10/2007
12/10/2008
12/10/2009
Daily integrated 1 MeV electron fluence
6 mil SiO2 RDC LANL
6 mil SiO2 RDC AE8MIN
6 mil SiO2 RDC AE8MAX
GPS Environment Data (LANL)
GPS Array Data with Environment Data (LANL)
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
12/10/2000
12/10/2001
12/10/2002
12/10/2003
12/10/2004
12/10/2005
12/10/2006
12/10/2007
12/10/2008
12/10/2009
P max/P
max0
Maximum Power (Pmax) Remaining Factor
GPS Array Data with Environment Data (LANL)
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
12/10/2000
12/10/2001
12/10/2002
12/10/2003
12/10/2004
12/10/2005
12/10/2006
12/10/2007
12/10/2008
12/10/2009
P max/P
max0
Maximum Power (Pmax) Remaining Factor
GPS Array Data with Environment Data (LANL)
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
12/10/2000
12/10/2001
12/10/2002
12/10/2003
12/10/2004
12/10/2005
12/10/2006
12/10/2007
12/10/2008
12/10/2009
P max/P
max0
Maximum Power (Pmax) Remaining Factor
Bottom LineThe environment is a significant source of error, depending on the mission and lifetime.
Outline1. Motivation2. The Space Radiation Environment3. Solar Cell Space Radiation
Degradation Modeling-JPL Equivalent Fluence (EQFLUX)-NRL Displacement Damage Dose (SCREAM)
4. Radiation Damage in Multijunction Solar Cells
Displacement Damage
Incident particle
Scattered particle
Primary knock-on
atom (PKA)
RutherfordNuclear Elastic
Nuclear Inelastic
PROTONS
RutherfordELECTRONS
VacanciesInterstitials
SIMPLE DEFECTS
Vacancy/impurityMulti-vacancy/interstitial
Clusters
COMPLEXES
INTERACTIONS
DAMAGE
Effect of Particle-Induced Damage
p+
100 150 200 250 300Temperature (K)
-100
0
100
DLT
S S
igna
l (pF
)
H3 H4H5
H7
EDEAEC
n+p InP
Trap
Ene
rgy
0.00
0.67
1.34
H3H4
H5H7
ED EAEC
Recombination CentersDiffusion Length Degradation
E
E
Compensation CentersCarrier removal
JPL and NRL Methods•NASA Jet Propulsion Laboratory (Pasadena, CA)
–Calculate equivalent 1 MeV electron fluence for mission–Uses empirically determined relative damage coefficients (RDCs)
–Read EOL power from measured 1 MeV electron curve
•Naval Research Laboratory (Washington, DC)–Calculate displacement damage dose (Dd ) for mission
–Uses calculated values of nonionizing energy loss (NIEL)
–Read EOL power from measured “characteristic” curve
*Both methods have the same general approach.
Orbital Degradation Calculations
ppp
pppeee
e
eeelectron MeV 1 t)dE,(ERDC
dE)(Ed
Ct)dE,(ERDCdE
)(Ed
JPL Method
NRL Method
Cpe is determined empirically (75-90% degradation level)
e
1ne
ee
eeppp
p
pd dE
)MeV1(NIEL)E(NIEL)(ENIEL
dE)(EdR)dE(ENIEL
dE)(Ed
D
Rep is determined empirically (ratio Dxe /Dxp )
*Both methods currently rely on single-valued electron-proton degradation correlation. However, these methods can be adapted to account for degradation-dependent correlation (WCPEC 2006).
Heritage Model
• Data needed– Protons
• E = 0.02, 0.05, 0.1, 0.3, 1, 3,
10 MeV•
= 3e9 to 2e12 p+/cm2
– Electrons• E = 0.6, 1, 12 MeV•
= 2e13 to 1e16 p+/cm2
JPL Equivalent Fluence Method
Electron and ProtonFluence Data (GaAs/Ge, 1991)
108 109 1010 1011 1012 1013 1014 1015 1016 10170.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Nor
mal
ized
Max
imum
Pow
er 1 Sun, AMOGaAs/Ge
Particle Fluence (cm-2)
Protons
Electrons0.6 MeV1 MeV2.4 MeV12 MeV
9.5 MeV3 MeV1 MeV0.5 MeV0.3 MeV0.2 MeV0.1 MeV0.05 MeV
25oC
Electron Damage Coefficients
Proton Damage Coefficients
Electron and ProtonFluence Data (GaAs/Ge, 1991)
RDC Calculation
10-1 100 101 102
Electron Energy (MeV)
10-3
10-2
10-1
100
101
102
Rel
ativ
e P m
ax D
amag
e C
oeffi
cien
t
0 mil1 mil3 mil6 mil12 mil20 mil30 mil60 mil
Coverglass Thickness
*Relative to 1 MeV normalincidence data, w/o coverglass
Normal incidenceno coverglass
10-2 10-1 100 101 102
Proton Energy (MeV)
10-2
10-1
100
101
102
Rel
ativ
e P m
ax D
amag
e C
oeffi
cien
t0 mil1 mil3 mil6 mil12 mil20 mil30 mil60 mil
Coverglass Thickness
*Relative to 10 MeV proton normalincidence data, w/o coverglass
Normal incidenceno coverglass
•Data exist for Pmax, Isc, and Voc for both electrons and protons
•Solar cell technologies available include Si, GaAs/Ge, MJ (2001)
•Empirical values for Cep
(based on 75‐90% level)
•Measurement intensive ($$)
GaAs/Ge (1991)
GaAs/Ge (1991)
(10 MeV Protons & 1 MeV electrons)
108 109 1010 1011 1012 1013 1014 1015 1016 10170.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Nor
mal
ized
Max
imum
Pow
er 1 Sun, AMOGaAs/Ge
Particle Fluence (cm-2)
Protons
Electrons0.6 MeV1 MeV2.4 MeV12 MeV
9.5 MeV3 MeV1 MeV0.5 MeV0.3 MeV0.2 MeV0.1 MeV0.05 MeV
25oC80% BOL
Equivalent Fluence Analyses of GaAs/Ge Solar Cells
x01logC1
P)(P
JPL Pmax vs Phi
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E+10 1.E+11 1.E+12 1.E+13 1.E+14 1.E+15 1.E+16 1.E+17 1.E+18Phi(10 MeV p+) and Phi(1 MeV e-) (cm-2)
Nor
m P
max
Protons1 MeV electrons5th order fit10 MeV proton fluence data1 MeV electron fluence data
JPL Voc vs Phi
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.E+10 1.E+11 1.E+12 1.E+13 1.E+14 1.E+15 1.E+16 1.E+17Phi(10 MeV p+) and Phi(1 MeV e-) (cm-2)
Nor
m V
oc
Protons1 MeV electrons5th order fit10 MeV proton fluence data1 MeV electron fluence data
value error value error value errorC 0.297 0.003 0.124 0.008 0.236 0.018
Phix 1.92E+11 5.44E+09 2.04E+11 3.88E+10 5.34E+11 1.00E+11Cep
value error value error value errorC 0.351 0.025 0.061 0.003 0.361 0.0341
Phix 2.38E+14 4.85E+13 2.79E+13 6.04E+12 4.46E+14 1.07E+14
10 MeV Proton and 1 MeV electron fit results
10 MeV Protons
1 MeV Electrons
1000 1400
Pmax Voc Isc
Pmax Voc Isc
400
0 10 20 30 40 50 60 70 80SiO2 Coverglass Thickness (mil)
1014
1015
1016
1 M
eV E
lect
ron
Flue
nce
(e- /c
m2 )
GaAs
5000 km, circular, 60o orbit (1 year duration)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E+11 1.E+12 1.E+13 1.E+14 1.E+15 1.E+16 1.E+17
Equivalent 1 MeV Electron Fluence (cm-2)
Nor
mal
ized
Pm
ax
200keVp300keVp500keVp1MeVp3MeVp9.5MeVp12 MeV2.4MeVe1MeVe600keVeProton FitElectron Fit
GaAs/Ge
Initial Omnidirectional Spectrum
Equivalent 1 MeV Electron Fluence
Proton Damage Coefficients
1 MeV Electron Pmax
Degradation10-2 10-1 100 101 102
Proton Energy (MeV)
10-2
10-1
100
101
Rel
ativ
e P m
ax D
amag
e C
oeff
icie
nt
0 mil1 mil3 mil6 mil12 mil20 mil30 mil60 mil
Coverglass
*Relative to 10 MeV normalincidence data, w/o
Thickness
coverglass, based on Pmax
JPL Equivalent Fluence Method
w/Cep
GaAs/Ge (1991)
10-1 100 101 102 103
Proton Energy (MeV)
5000 km, circular, 600 orbit (1 year duration)
107
108
109
1010
1011
1012
1013
1014
Flue
nce
(cm
2 MeV
)-1
JPL Model Pros/Cons• Pros:
– Heritage (developed in the 1980s)– Widely available and already incorporated into many space
radiation suites (SPENVIS, Space RadiationTM, OMERE, etc.)• Cons:
– Much ground test data needed ($$)– Requires 1 MeV electron (to 12 MeV) AND 10 MeV proton data– Currently available for Si (1982), GaAs/Ge (1996), MJ (1999)– Program not particularly user friendly in FORTRAN version– Entire calculation is technology specific (every design change
needs requalification, $$)– Calculation of omnidirectional RDCs for covered cells not
trivial and coverglass and technology specific– Assumes that the total damage can be characterized by 1 MeV
electrons which may not be appropriate for proton-dominated orbits
Proposed Model
• Data needed– Protons
• E = 3 MeV•
= 1e10 to 1e13 p+/cm2
– Electrons• E = 1 and 5 MeV•
= 1e13 to 1e16 p+/cm2
NRL Displacement Damage Dose Method
Electron and ProtonFluence Data (GaAs/Ge, 1991)
108 109 1010 1011 1012 1013 1014 1015 1016 10170.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Nor
mal
ized
Max
imum
Pow
er 1 Sun, AMOGaAs/Ge
Particle Fluence (cm-2)
Protons
Electrons1 MeV5 MeV
3 MeV
25oC
NonIonizing Energy Loss
NIEL= Rate at which energy is lost to nonionizing events; analogous to LET or stopping power for ionizing events (UNIT=MeV/cm or MeVcm2/g)
)T( dmin
E)]d,E)L[T(,T(d
E),(dNIEL(E)
Differential scattering cross section for displacements
Recoil energy
Lindhard partition factor
NOTE: Energy dependence of NIEL similar to experimental RDCs
10-4 10-3 10-2 10-1 100 101 102 103
Particle Energy (MeV)
10-6
10-5
10-4
10-3
10-2
10-1
100
101
Si N
IEL
(MeV
cm2 /g
)
ProtonElectronNeutron
*Td = 21 eV
Si
10-4 10-3 10-2 10-1 100 101 102 103
Particle Energy (MeV)
10-6
10-5
10-4
10-3
10-2
10-1
100
101
GaA
s N
IEL
(MeV
cm2 /g
)
ProtonElectronNeutron
*Td = 10 eV, Ga & As GaAs
NIEL in Si and GaAs
*NIEL calculation available for any charged particle in any material
*Neutron NIEL determined from Displacement Kerma calculation
NIEL (MeVcm2/g) = KERMA (MeVmb) x (10-27NA /A)
•Calculated NIEL gives energy dependence of damage
coefficients (well‐matched to RDCs)
•Characteristic curves can be fit to simple expressions
(similar to JPL handbook method)
•Characteristic curve can be generated using minimal
ground test data (only 1 proton and two electron
energies)
Characteristic Curves
w/ NIEL
Measured Data
108 109 1010 1011 1012 1013 1014 1015 1016 10170.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Nor
mal
ized
Max
imum
Pow
er
1 Sun, AMOGaAs/Ge
Particle Fluence (cm-2)
Protons
Electrons0.6 MeV1 MeV2.4 MeV12 MeV
9.5 MeV3 MeV1 MeV0.5 MeV0.3 MeV0.2 MeV0.1 MeV0.05 MeV
25oC
1 MeV equiv. Neutrons
10-4 10-3 10-2 10-1 100 101 102 103
Particle Energy (MeV)
10-6
10-5
10-4
10-3
10-2
10-1
100
101
GaA
s N
IEL
(MeV
cm2 /g
)
ProtonElectronNeutron
*Td = 10 eV, Ga & As GaAs
108 109 1010 1011 1012
Displacement Damage Dose (MeV/g)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Nor
mal
ized
Max
imum
Pow
er 1 Sun, AM0T=25oC
GaAs/Ge
0.6 MeV1 MeV2.4 MeV12 MeV
Protons Electrons9.5 MeV3 MeV1 MeV0.5 MeV0.3 MeV0.2 MeV
1 MeV equiv.Neutrons
Dd(1 MeV electron)
Dd
Displacement Damage Dose Analysis of GaAs/Ge Solar Cells
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.E+07 1.E+08 1.E+09 1.E+10 1.E+11 1.E+12Dd(prot) and Dd(1 MeV elec) (MeV/g)
Nor
m V
oc
Proton Voc1 MeV Electron VocProton Voc data1 MeV Electron Voc data
GaAs/Ge
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E+07 1.E+08 1.E+09 1.E+10 1.E+11 1.E+12Dd(prot) and Dd(1 MeV elec) (MeV/g)
Norm
Pm
ax
Proton Pmax1 MeV Electron PmaxProton Pmax data1 MeV Electron Pmax data
GaAs/Ge
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E+07 1.E+08 1.E+09 1.E+10 1.E+11 1.E+12Dd(prot) and Dd(1 MeV elec) (MeV/g)
Nor
m Is
c
Proton Isc1 MeV Electron IscProton Isc data1 MeV Electron Isc data
GaAs/Ge
Dd Analyses of GaAs/Ge Solar Cells
x
ddDDlogC
P)D(P 11
0
value error value error value errorC 0.2904 0.0071 0.115 0.00317 0.229 0.0158Dx 1.10E+09 8.66E+07 1.15E+09 9.31E+07 2.52E+09 4.45E+08
value error value error value errorC 0.363 0.025 0.0745 0.0078 0.343 0.03Dx 6.90E+09 1.52E+09 1.28E+09 5.32E+08 1.10E+10 2.59E+09n 1.647 0.086 2.128 0.201 1.326 0.096
Protons
Electrons
Pmax Voc Isc
Pmax Voc Isc
1
n
refd )E(NIEL
)E(NIEL)E(NIEL)E()E(D
MJ Solar Cell Radiation Response in terms of Dd
*Experimentally determined variables (C, Dxp
, Dxe
, n)
*GaAs NIEL used in the correlation
108108 109 1010 1011
Displacement Damage Dose (MeV/g)
0.5
0.7
0.9
1.1
Nor
m P
mp
0
0.312.5101212
Emcore 3J Cells
Energy (MeV)
electron
proton C = 0.199Dx = 1.2x109 MeV/gn = 1.8Rep = 0.17
108108 109 1010 1011
Displacement Damage Dose (MeV/g)
0.5
0.7
0.9
1.1
Nor
m P
mp
0
0.312.5100.6112
Spectrolab EOL 3J Cells n/p cells
Energy (MeV)
electron
Data from Marvin 2000
protonC = 0.3Dx = 3x109 MeV/gn = 1.6Rep = 0.3
1
n
refd )E(NIEL
)E(NIEL)E(NIEL)E()E(D
x
ddDDlogC
P)D(P 11
0 xp
xeep D
DR
12 MeV2 MeV1 MeV0.6 MeVEffFitElec0.05 MeV0.1 MeV0.3 MeV1 MeV2.5 MeV10 MeVEffFitProt
Emcore ATJ Solar Cell Radiation Response
*This shows that the Emcore ATJ multijunction (3J) solar cell is
well‐
behaved in that indeed a single characteristic curve is generated from the
ground data. This data set is included in SCREAM development.
108 109 1010 1011 1012
Displacement Damage Dose (MeV/g)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Nor
mal
ized
Max
imum
Pow
er 1 Sun, AM0T=25oC
GaAs/GeDd(1 MeV electron)
0 10 20 30 40 50SiO2 Thickness (mil)
109
1010
1011
1012
Dd
(MeV
/g) (1 Year Mission)
GaAs
5000 km, circular, 60o
Incident and SDS (Isotropic) NonIonizing Energy Loss (2003)
Total Mission Dose
Pmax
Degradation
NRL Displacement Damage Dose Method
10-4 10-3 10-2 10-1 100 101 102 103
Proton Energy (MeV)107
108
109
1010
1011
1012
1013
1014
1015
1016D
iffer
entia
l Flu
ence
(cm
-2M
eV-1
)
3 mil
30 mil
12 mil
Uncovered
SiO2 Coverglass Thickness
5000 km, Circular Orbit60 Inclination5 year mission
10-4 10-3 10-2 10-1 100 101 102 103
Proton Energy (MeV)
10-3
10-2
10-1
100
101
GaA
s N
IEL
(MeV
cm2 /g
)
Proton
*Td = 10 eV, Ga & As GaAs
NRL Model Pros/Cons• Pros:
– Few ground test measurements needed (3)– Ground test particle energies can be conveniently chosen– Shielding algorithm is independent– Allows for rapid analysis of emerging cell technologies– Allows for easy trade studies– Can combine data from different experiments– Allows for alternate radiation particles (neutrons, alphas, etc.)
• Cons:– Lack of heritage (developed in the mid-1990s)– More suited for sufficiently thin devices (~few mm)
– Uniform damage deposition required over active region– Program currently not available to general public– No interlaboratory cross calibration of method
Analytical Model Comparison• Proton Dd to 1 MeV electron equivalent fluence
)1(NIELD*1
DD
1 xeCC
xp
dpelectron MeV 1
e
p
• 1 MeV electron fluence to equivalent proton Dd
1
D)1(NIEL*1DD p
e
CC
xe
electron MeV 1xpdp
*General rule of thumb: 1015 1 MeV e-/cm2 ~ 1010 MeV/g
Orbit Examples (SPENVIS)
1 year, 700 x 12050 km, 63.4o, w/ solar event protons
Fluence Spectra GaAs/Ge Cell degradation vs.
Coverglass Thickness
700 x 12050 km, 63.4o, ESP Total Fluence, 1 year
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
1.E+14
1.E+15
1.E+16
0.01 0.1 1 10 100 1000Energy (MeV)
Inte
gral
Flu
ence
(cm
-2) Trapped Protons
Solar ProtonsTrapped Electrons
700 x 12050 km, 63.4o, 1 year (Proton-dominated)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 5 10 15 20 25 30Coverglass Thickness (mils SiO2)
Nor
mal
ized
Rem
aini
ng P
aram
eter
Pmax JPLVoc JPLNRL Proton Dd PmaxNRL Proton Dd Voc
GaAs/Ge
Orbit Examples (SPENVIS)
15 year, GEO, ESP Total Fluence
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
1.E+14
1.E+15
1.E+16
1.E+17
0.01 0.1 1 10 100 1000Energy (MeV)
Inte
gral
Flu
ence
(cm
-2)
Trapped ProtonsSolar ProtonsTrapped Electrons
15 year GEO w/ solar event protons
Fluence Spectra GaAs/Ge Cell degradation vs.
Coverglass Thickness
GEO, 15 year (Electrons & Protons)
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
0 5 10 15 20 25 30Coverglass Thickness (mils SiO2)
Nor
mal
ized
Rem
aini
ng P
aram
eter
Pmax JPLVoc JPLNRL Proton Dd PmaxNRL Proton Dd Voc
GaAs/Ge
Why Do The Models Agree?
10-2 10-1 100 101 102
Energy (MeV)
10-1
100
101
102
103
Rel
ativ
e P m
ax D
amag
e C
oeffi
cien
t SJ GaAs/Ge2J InGaP/GaAs/Ge3J InGaP/GaAs/GeCIGSNIEL GaAsJPL MJ RDCs SRIM MJ RDCs
Protons
*Parameters normalized to value at 10 MeV
10-1 100 101 102
Energy (MeV)
10-3
10-2
10-1
100
101
102
Rel
ativ
e P m
ax D
amag
e C
oeffi
cien
t Electrons
*Parameters normalized to value at 1 MeV
SJ GaAs/Ge2J InGaP/GaAs/Ge3J InGaP/GaAs/GeCIGS1 MeV Equiv. NIEL GaAs (n=1.7)1 MeV Equiv. NIEL CIGS (n=2)
The energy dependence of the experimentally determined RDCs closely match that of the calculated NIEL.
DDD Implementation History• Quickbasic code (user proton spectrum input)
– Developed by NRL with Ed Burke (mid 1990’s)– Transformed into Mathcad (mid 1990’s to present)
• Enabled both proton and electron conditions in 2005
• NASA GRC support to Maxwell Labs (AP8/AE8)– 1st
version of SAVANT (late 1990’s)– Developed for inclusion into NASA Environmental Work Bench
• 1st
NASA Living With a Star (LWS‐SET) Data Mining NRA– NRL and NASA GRC created a FORTRAN‐based, stand‐alone, WindowsTM‐
based, version of SAVANT (2003) distributed by NASA MSFC (SEE Program,
now defunct)
– Only beta version produced (large laundry list created)• SCREAM (Solar Cell Radiation Environment Analysis Models)
– Transformed MATHCAD version into MATLAB‐based executable– Available by request
• Spenvis/Mulassis (MC‐SCREAM)– All of the components are there except solar cell damage info– The enabling component is MULASSIS to calculate the SDS– User interface created by Daniel Heynderickx (DHC, Consultancy)
SAVANT DDD Analysis Code
SAVANT: Solar Array Verification and ANalysis Tool (NASA, NRL, OAI)
SCREAM• Integral Radiation Spectrum Input (user input)
– Converts the log‐log spectral data into a 10th
order polynomial fit– Differentiates the polynomial fit to get the differential spectrum
• Shielding Range data– Protons and ions: SRIM 2006– Electrons: ESTAR
• Slowed‐Down Spectrum (SDS) Calculation– Slab model adjoint calculation based on Haffner model (1967)– Benchmarked with Space RadiationTM, Mulassis
• Calculation of DDD (integral of NIEL*SDS over energy)– NIEL data from WINNIEL2 (ions) and MATHCAD (electrons)
• Calculation of Parametric Degradation– Uses 5 empirically‐determined parameters for each metric
Start-Up Page
Materials Menu Options
Cell Technology Options
Degradation Parameter Options
After selecting HEO_TrP.txt and entering, the data are plotted
After choosing CMX and 6 mils, and pressing Slowed-Down Spectrum (“Primary Spectrum” button selected)
At this time, you can save the SDS using the FILE - Save SDS menu option
After pressing Displacement Damage Dose
MC-SCREAM• Incident differential radiation spectra
(SPENVIS)
– Can choose several proton, electron, and solar proton models• Calculation of the “slowed‐down”
spectra after having passed
through shielding
(analytical, MULASSIS)– Monte Carlo model– Several material layers can be used to describe cell
• Calculation of total DDD for the mission
(SPENVIS)– NIEL data from WINNIEL2 (ions) and MCAD (electrons)– Already implemented in Mulassis
• Determination of the expected cell degradation– Uses 5 empirically‐determined parameters for each metric– Will have several cell technologies included– User entry option for proprietary/developmental cells
Output:1.Slowed down spectra for each incident behind shielding2. DDD for each particle
Outline1. Motivation2. The Space Radiation Environment3. Solar Cell Space Radiation
Degradation Modeling-JPL Equivalent Fluence (EQFLUX)-NRL Displacement Damage Dose (SCREAM)
4. Radiation Damage in Multijunction Solar Cells
Multijunction Solar Cell Radiation Response
InGaP2 GaAs Ge0.8 m 3 m 300 m
Monolithic 3J InGaP2 /GaAs/Ge (AM0, 1 sun ~28%)I1 I2 I3
Monolithic: Current-limiting, Icell =minimum(I1 ,I2 ,I3 )
•Whichever cell is the softest will control the overall cell performance.•MJ cell design can alleviate this to some extent by forcing the cell to degrade by the most radiation hard subcell.•The (beginning-of-life) BOL properties are slightly sacrificed in such a design for better (end-of-life) EOL behavior.
Ground Test MJ Solar Cell Data
108 109 1010 1011 10120.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
30 keV50 keV70 keV100 keV150 keV250 keV380 keV1 MeV2 MeV3 MeV5 MeV
Proton Energy
Displacement Damage Dose (MeV/g)
Rem
aini
ng F
acto
r of P
max
*T. Sumita, M. Imaizumi, S. Matsuda, T. Ohshima, A. Ohi, and T. Kamiya, Proc. 19th EPVSEC, Paris, 2004.
Dd = NIEL x
Another good example of NIEL correlation!
Pmax Proton Degradation vs. Displacement Damage Dose (Dd )
108 109 1010 1011 10120.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
30 keV50 keV70 keV100 keV150 keV250 keV380 keV1 MeV2 MeV3 MeV5 MeV
Proton Energy
Displacement Damage Dose (MeV/g)
Rem
aini
ng F
acto
r of P
max
*T. Sumita, M. Imaizumi, S. Matsuda, T. Ohshima, A. Ohi, and T. Kamiya, Proc. 19th EPVSEC, Paris, 2004.
Two separate damage curves are apparent!
Which damage curve will apply in space?
InGaP
GaAs
Ground Test MJ Solar Cell DataPmax Proton Degradation vs. Displacement Damage Dose (Dd )
300 500 700 900 1100 1300 1500 1700 19000.0
0.2
0.4
0.6
0.8
1.0
Wavelength (nm)
Qua
ntum
Effi
cien
cy
Solid lines: UnirradiatedDashed lines: 1x1012 p+/cm2
50 keV Protons
InGaP/GaAs/Ge
300 500 700 900 1100 1300 1500 1700 19000.0
0.2
0.4
0.6
0.8
1.0
Wavelength (nm)
Qua
ntum
Effi
cien
cy
Solid lines: UnirradiatedDashed lines: 1x1012 p+/cm2
100 keV Protons
InGaP/GaAs/Ge
300 500 700 900 1100 1300 1500 1700 19000.0
0.2
0.4
0.6
0.8
1.0
Wavelength (nm)
Qua
ntum
Effi
cien
cy
Solid lines: UnirradiatedDashed lines: 1x1012 p+/cm2
400 keV Protons
InGaP/GaAs/Ge
300 500 700 900 1100 1300 1500 1700 19000.0
0.2
0.4
0.6
0.8
1.0
Wavelength (nm)
Qua
ntum
Effi
cien
cy
Solid lines: UnirradiatedDashed lines: 1x1012 p+/cm2
1 MeV Protons
InGaP/GaAs/Ge
Proton-Induced QE Degradation in MJ Cells
50 keV protons
100 keV protons
400 keV protons
1 MeV protons
SRIM 2003.26 Simulation
InGaP2 GaAs Ge0.8 m 3 m 300 m
• 3J InGaP2 /GaAs/Ge structure• 3 Proton Energies
– 63.1 keV (0.6 m range)– 251 keV (2 m range)– 1 MeV (11 m range)
• Monoenergetic, normal incidence• Monoenergetic, omnidirectional• Spectrum, omnidirectional• Spectrum, non-omnidirectional
“TRIM.DAT” SRIM input file
(“normal” SRIM run)
1.E-02
1.E-01
1.E+00
1.E+01
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02Depth (um)
Ener
gy A
bsor
bed
by R
ecoi
ls (k
eV/u
m) 63 keV (norm.)
251 keV (norm.)1 MeV (norm.)
GaAs GeInGaP
108 109 1010 1011 10120.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
30 keV50 keV70 keV100 keV150 keV250 keV380 keV1 MeV2 MeV3 MeV5 MeV
Proton Energy
Displacement Damage Dose (MeV/g)
Rem
aini
ng F
acto
r of P
max
Monoenergetic, Unidirectional Irradiations
• Typical ground test conditions
(not space conditions)• Nonuniform vacancy distribution – Bragg Peak at end of track• Different energies can preferentially degrade one sub‐junction• This effect is not seen in 1 MeV electron irradiation (longer ranges)
InGaP degradation
GaAs degradation
*T. Sumita, M. Imaizumi, S. Matsuda, T. Ohshima, A. Ohi, and T. Kamiya, Proc. 19th EPVSEC, Paris, 2004.
*Results from SRIM 2003 v.26 (www.srim.org)
Monoenergetic, Omnidirectional Irradiation
• More uniform vacancy distribution than a unidirectional beam• Bragg peak not seen
*Results from SRIM 2003 v.26 using special input file (TRIM.DAT) which specifies random incident angles (via direction cosines) over 2
geometry1.E-02
1.E-01
1.E+00
1.E+01
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02Depth (um)
Ener
gy A
bsor
bed
by R
ecoi
ls (k
eV/u
m)
63 keV (omni.)251 keV (omni.)1 MeV (omni.)
GaAs GeInGaP
Energy Spectrum, Omnidirectional Irradiation
• Representative of exposure in the space radiation environment• The vacancy distribution profile is nearly uniform over active region
*Results from SRIM 2003 v.26 using special input file (TRIM.DAT) which specifies random incident angle and energy to simulate HEO spectrum (3 mil SiO2 )
No special effects due to low energy protons apparent!
1.E-03
1.E-02
1.E-01
1.E+00
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02Depth (um)
Ener
gy A
bsor
bed
by R
ecoi
ls (k
eV/u
m)
HEO orbit,3 mils SiO2
GaAs GeInGaP
4 mil CMG Coverglass
2 mil DC 93-500 Adhesive
11 m IMM (assumed Ge)5 m Ag Back Metallization
2 mil GE566 Adhesive
2 mil Kapton
Assumed Structure for Monte Carlo N-Particle eXtended (MCNPX) Simulation
Blanket Structure for Monte Carlo Simulation
Monte Carlo (MCNPX) simulation of Tacsat4 Radiation Environment on IMM blanket structure
TACSAT4 Omnidirectional Proton Irradiation (Entire Structure)
Top-Side RadiationBottom-Side Radiation
4 mil CMG
2 mil DC93-500
11 m IMM5 m Ag
2 mil Kapton
2 mil GE566
Ionizing Energy Deposition In Blanket
Energy Deposition vs. Depth in Blanket
cell
Irradiation from bottom
Irradiation from top
Bottom-SidedTop-SidedSum
Effect of Thin Shielding on Spectrum IrradiationOmnidirectional Irradiation
0.0
0.1
0.2
0.3
0.4
0.5
0.6
1.E-02 1.E-01 1.E+00 1.E+01Depth (um)
Ener
gy G
oing
to R
ecoi
ls (k
eV/u
m/io
n)
No shielding1 um ZnO10 um SiO23 mils SiO2
Circular, 5093 km, 57o ,1 year Orbit
(3 mils ~ 75 m)