Material=Silicon,Model=Absorption,Parameter=A0,Value=1.2107e+15 Material=Silicon,Model=Absorption,Parameter=A1,Value=1.0000e+04 Material=Silicon,Model=Absorption,Parameter=A2,Value=100 Material=Silicon,Model=Absorption,Parameter=AT,Value=5.1000e+03 Material=Silicon,Model=Absorption,Parameter=E0,Value=1.4956 Material=Silicon,Model=Absorption,Parameter=E1,Value=1.12 Material=Silicon,Model=Absorption,Parameter=E2,Value=0.025 Material=Silicon,Model=Absorption,Parameter=P,Value=0.5 Material=Silicon,Model=Absorption,Parameter=S,Value=6.5340e+04 Material=Silicon,Model=Absorption,Parameter=T0,Value=81.9 Material=Silicon,Model=AlphaParticle,Parameter=Ep,Value=3.6 Material=Silicon,Model=AlphaParticle,Parameter=a0,Value=-1.0330e-04 Material=Silicon,Model=AlphaParticle,Parameter=a1,Value=2.7000e-10 Material=Silicon,Model=AlphaParticle,Parameter=a2,Value=4.3300e-17 Material=Silicon,Model=AlphaParticle,Parameter=alpha,Value=90 Material=Silicon,Model=AlphaParticle,Parameter=alpha2,Value=5.5000e-04 Material=Silicon,Model=AlphaParticle,Parameter=alpha3,Value=2.0000e-04 Material=Silicon,Model=AlphaParticle,Parameter=c2,Value=1.4 Material=Silicon,Model=AlphaParticle,Parameter=s,Value=2.0000e-12 Material=Silicon,Model=AlphaParticle,Parameter=wt,Value=1.0000e-05 Material=Silicon,Model=Auger,Parameter=A_e,Value=6.7000e-32 Material=Silicon,Model=Auger,Parameter=A_h,Value=7.2000e-32 Material=Silicon,Model=Auger,Parameter=B_e,Value=2.4500e-31 Material=Silicon,Model=Auger,Parameter=B_h,Value=4.5000e-33 Material=Silicon,Model=Auger,Parameter=C_e,Value=-2.2000e-32 Material=Silicon,Model=Auger,Parameter=C_h,Value=2.6300e-32 Material=Silicon,Model=Auger,Parameter=H_e,Value=3.46667 Material=Silicon,Model=Auger,Parameter=H_h,Value=8.25688 Material=Silicon,Model=Auger,Parameter=N0_e,Value=1.0000e+18 Material=Silicon,Model=Auger,Parameter=N0_h,Value=1.0000e+18 Material=Silicon,Model=AvalancheFactors,Parameter=n_delta,Value=1.5 Material=Silicon,Model=AvalancheFactors,Parameter=n_gamma,Value=1 Material=Silicon,Model=AvalancheFactors,Parameter=n_l_f,Value=1 Material=Silicon,Model=AvalancheFactors,Parameter=p_delta,Value=1.5 Material=Silicon,Model=AvalancheFactors,Parameter=p_gamma,Value=1 Material=Silicon,Model=AvalancheFactors,Parameter=p_l_f,Value=1 Material=Silicon,Model=Band2BandTunneling,Parameter=A,Value=8.9770e+20 Material=Silicon,Model=Band2BandTunneling,Parameter=A1,Value=1.1000e+27 Material=Silicon,Model=Band2BandTunneling,Parameter=A1_5,Value=1.9000e+24 Material=Silicon,Model=Band2BandTunneling,Parameter=A2,Value=3.5000e+21 Material=Silicon,Model=Band2BandTunneling,Parameter=Agen,Value=3.5000e+21 Material=Silicon,Model=Band2BandTunneling,Parameter=Apath1,Value=4.0000e+14 Material=Silicon,Model=Band2BandTunneling,Parameter=Apath2,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=Apath3,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=Arec,Value=3.5000e+21 Material=Silicon,Model=Band2BandTunneling,Parameter=B,Value=2.1466e+07 Material=Silicon,Model=Band2BandTunneling,Parameter=B1,Value=2.1300e+07 Material=Silicon,Model=Band2BandTunneling,Parameter=B1_5,Value=2.1900e+07 Material=Silicon,Model=Band2BandTunneling,Parameter=B2,Value=2.2500e+07 Material=Silicon,Model=Band2BandTunneling,Parameter=Bgen,Value=2.2500e+07 Material=Silicon,Model=Band2BandTunneling,Parameter=Bpath1,Value=1.9000e+07 Material=Silicon,Model=Band2BandTunneling,Parameter=Bpath2,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=Bpath3,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=Brec,Value=2.2500e+07 Material=Silicon,Model=Band2BandTunneling,Parameter=DenCorRef_e,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=DenCorRef_h,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=Dpath1,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=Dpath2,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=Dpath3,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=MaxTunnelLength,Value=1.0000

e-05 Material=Silicon,Model=Band2BandTunneling,Parameter=MinField,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=MinField,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=Pgen,Value=2 Material=Silicon,Model=Band2BandTunneling,Parameter=Ppath1,Value=0.037 Material=Silicon,Model=Band2BandTunneling,Parameter=Ppath2,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=Ppath3,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=Prec,Value=2 Material=Silicon,Model=Band2BandTunneling,Parameter=Rpath1,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=Rpath2,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=Rpath3,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=alpha,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=dDist,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=dPot,Value=0.0000e+00 Material=Silicon,Model=Band2BandTunneling,Parameter=hbarOmega,Value=0.0186 Material=Silicon,Model=Bandgap,Parameter=Bgn2Chi,Value=0.5 Material=Silicon,Model=Bandgap,Parameter=Chi0,Value=4.05 Material=Silicon,Model=Bandgap,Parameter=Chi0_300,Value=4.07274 Material=Silicon,Model=Bandgap,Parameter=Eg0,Value=1.16964 Material=Silicon,Model=Bandgap,Parameter=Eg0_300,Value=1.12416 Material=Silicon,Model=Bandgap,Parameter=FermiEnergy,Value=11.7 Material=Silicon,Model=Bandgap,Parameter=Tpar,Value=0.0000e+00 Material=Silicon,Model=Bandgap,Parameter=WorkFunction,Value=4.25 Material=Silicon,Model=Bandgap,Parameter=alpha,Value=4.7300e-04 Material=Silicon,Model=Bandgap,Parameter=beta,Value=6.3600e+02 Material=Silicon,Model=Bandgap,Parameter=dEg0(Bennett),Value=0.0000e+00 Material=Silicon,Model=Bandgap,Parameter=dEg0(OldSlotboom),Value=-1.5950e-02 Material=Silicon,Model=Bandgap,Parameter=dEg0(Slotboom),Value=-4.7950e-03 Material=Silicon,Model=Bandgap,Parameter=dEg0(delAlamo),Value=-1.4070e-02 Material=Silicon,Model=BandstructureParameters,Parameter=A1,Value=-7.2400e+00 Material=Silicon,Model=BandstructureParameters,Parameter=A2,Value=-5.1000e-01 Material=Silicon,Model=BandstructureParameters,Parameter=A3,Value=6.73 Material=Silicon,Model=BandstructureParameters,Parameter=A4,Value=-3.3600e+00 Material=Silicon,Model=BandstructureParameters,Parameter=A5,Value=-3.3500e+00 Material=Silicon,Model=BandstructureParameters,Parameter=A6,Value=-4.7200e+00 Material=Silicon,Model=BandstructureParameters,Parameter=cr,Value=0.019 Material=Silicon,Model=BandstructureParameters,Parameter=ep_te,Value=28.8 Material=Silicon,Model=BandstructureParameters,Parameter=ep_tm,Value=28.8 Material=Silicon,Model=BandstructureParameters,Parameter=gamma_1,Value=6.85 Material=Silicon,Model=BandstructureParameters,Parameter=gamma_2,Value=2.1 Material=Silicon,Model=BandstructureParameters,Parameter=gamma_3,Value=2.9 Material=Silicon,Model=BandstructureParameters,Parameter=so,Value=0.34 Material=Silicon,Model=BarrierLowering,Parameter=a1,Value=2.6000e-04 Material=Silicon,Model=BarrierLowering,Parameter=a2,Value=0.0000e+00 Material=Silicon,Model=BarrierLowering,Parameter=p1,Value=0.5 Material=Silicon,Model=BarrierLowering,Parameter=p1_eq,Value=0.5 Material=Silicon,Model=BarrierLowering,Parameter=p2,Value=1 Material=Silicon,Model=BarrierLowering,Parameter=p2_eq,Value=1 Material=Silicon,Model=BarrierTunneling,Parameter=alphae,Value=0.0000e+00 Material=Silicon,Model=BarrierTunneling,Parameter=alphah,Value=0.0000e+00 Material=Silicon,Model=BarrierTunneling,Parameter=g_e,Value=2.1 Material=Silicon,Model=BarrierTunneling,Parameter=g_h,Value=0.66 Material=Silicon,Model=BarrierTunneling,Parameter=mt_e,Value=0.0000e+00 Material=Silicon,Model=BarrierTunneling,Parameter=mt_h,Value=0.0000e+00 Material=Silicon,Model=Bennett,Parameter=Ebgn,Value=6.8400e-03 Material=Silicon,Model=Bennett,Parameter=Nref,Value=3.1620e+18 Material=Silicon,Model=CDL,Parameter=Etrap_e,Value=0.0000e+00 Material=Silicon,Model=CDL,Parameter=Etrap_h,Value=0.0000e+00 Material=Silicon,Model=CDL,Parameter=MinField,Value=0.0000e+00 Material=Silicon,Model=CDL,Parameter=S_e,Value=2

Material=Silicon,Model=CDL,Parameter=S_h,Value=2 Material=Silicon,Model=CDL,Parameter=TrapTrapRate,Value=1.0000e+15 Material=Silicon,Model=CDL,Parameter=Z_e,Value=0.0000e+00 Material=Silicon,Model=CDL,Parameter=Z_h,Value=0.0000e+00 Material=Silicon,Model=CDL,Parameter=e_Nref_e,Value=1.0000e+16 Material=Silicon,Model=CDL,Parameter=e_Nref_h,Value=1.0000e+16 Material=Silicon,Model=CDL,Parameter=e_Talpha_e,Value=-1.5000e+00 Material=Silicon,Model=CDL,Parameter=e_Talpha_h,Value=-1.5000e+00 Material=Silicon,Model=CDL,Parameter=e_Tcoeff_e,Value=2.55 Material=Silicon,Model=CDL,Parameter=e_Tcoeff_h,Value=2.55 Material=Silicon,Model=CDL,Parameter=e_gamma_e,Value=1 Material=Silicon,Model=CDL,Parameter=e_gamma_h,Value=1 Material=Silicon,Model=CDL,Parameter=e_taumax_e,Value=1.0000e-05 Material=Silicon,Model=CDL,Parameter=e_taumax_h,Value=1.0000e-05 Material=Silicon,Model=CDL,Parameter=e_taumin_e,Value=0.0000e+00 Material=Silicon,Model=CDL,Parameter=e_taumin_h,Value=0.0000e+00 Material=Silicon,Model=CDL,Parameter=h_Nref_e,Value=1.0000e+16 Material=Silicon,Model=CDL,Parameter=h_Nref_h,Value=1.0000e+16 Material=Silicon,Model=CDL,Parameter=h_Talpha_e,Value=-1.5000e+00 Material=Silicon,Model=CDL,Parameter=h_Talpha_h,Value=-1.5000e+00 Material=Silicon,Model=CDL,Parameter=h_Tcoeff_e,Value=2.55 Material=Silicon,Model=CDL,Parameter=h_Tcoeff_h,Value=2.55 Material=Silicon,Model=CDL,Parameter=h_gamma_e,Value=1 Material=Silicon,Model=CDL,Parameter=h_gamma_h,Value=1 Material=Silicon,Model=CDL,Parameter=h_taumax_e,Value=3.0000e-06 Material=Silicon,Model=CDL,Parameter=h_taumax_h,Value=3.0000e-06 Material=Silicon,Model=CDL,Parameter=h_taumin_e,Value=0.0000e+00 Material=Silicon,Model=CDL,Parameter=h_taumin_h,Value=0.0000e+00 Material=Silicon,Model=CDL,Parameter=hbarOmega_e,Value=0.068 Material=Silicon,Model=CDL,Parameter=hbarOmega_h,Value=0.068 Material=Silicon,Model=CDL,Parameter=m_theta_e1,Value=0.258 Material=Silicon,Model=CDL,Parameter=m_theta_e2,Value=0.258 Material=Silicon,Model=CDL,Parameter=m_theta_h1,Value=0.24 Material=Silicon,Model=CDL,Parameter=m_theta_h2,Value=0.24 Material=Silicon,Model=CarrierCarrierScattering_Brooks/Herring,Parameter=c1,Valu e=1.5600e+21 Material=Silicon,Model=CarrierCarrierScattering_Brooks/Herring,Parameter=c2,Valu e=7.6300e+19 Material=Silicon,Model=CarrierCarrierScattering_Conwell/Weisskopf,Parameter=D,Va lue=1.0400e+21 Material=Silicon,Model=CarrierCarrierScattering_Conwell/Weisskopf,Parameter=F,Va lue=7.4520e+13 Material=Silicon,Model=ComplRefIndexImageCarrDepModel,Parameter=Ck_carr,Value=0. 0000e+00 Material=Silicon,Model=ComplRefIndexImaghCarrDepModel,Parameter=Ck_carr,Value=0. 0000e+00 Material=Silicon,Model=ComplRefIndexMoleDepModel,Parameter=k_0,Value=0.0000e+00 Material=Silicon,Model=ComplRefIndexMoleDepModel,Parameter=n_0,Value=3.45 Material=Silicon,Model=ComplRefIndexRealCarrDepModel,Parameter=Cn_carr,Value=1 Material=Silicon,Model=ComplRefIndexRealGainDepModel,Parameter=Cn_gain,Value=0.0 000e+00 Material=Silicon,Model=ComplRefIndexRealGainDepModel,Parameter=Npar,Value=1.0000 e+18 Material=Silicon,Model=ComplRefIndexRealTempDepModel,Parameter=Cn_temp,Value=2.0 000e-04 Material=Silicon,Model=ComplRefIndexRealTempDepModel,Parameter=Tpar,Value=3.0000 e+02 Material=Silicon,Model=ComplRefIndexWavelengthDepModel,Parameter=Ck_lambda,Value =0.0000e+00 Material=Silicon,Model=ComplRefIndexWavelengthDepModel,Parameter=Cn_lambda,Value

=0.0000e+00 Material=Silicon,Model=ComplRefIndexWavelengthDepModel,Parameter=Dk_lambda,Value =0.0000e+00 Material=Silicon,Model=ComplRefIndexWavelengthDepModel,Parameter=Dn_lambda,Value =0.0000e+00 Material=Silicon,Model=ConstantMobility_electron,Parameter=Exponent,Value=2.5 Material=Silicon,Model=ConstantMobility_electron,Parameter=mumax,Value=1.4170e+0 3 Material=Silicon,Model=ConstantMobility_electron,Parameter=mutunnel,Value=0.05 Material=Silicon,Model=ConstantMobility_electron_aniso,Parameter=Exponent,Value= 2.5 Material=Silicon,Model=ConstantMobility_electron_aniso,Parameter=mumax,Value=1.4 170e+03 Material=Silicon,Model=ConstantMobility_electron_aniso,Parameter=mutunnel,Value= 0.05 Material=Silicon,Model=ConstantMobility_hole,Parameter=Exponent,Value=2.2 Material=Silicon,Model=ConstantMobility_hole,Parameter=mumax,Value=4.7050e+02 Material=Silicon,Model=ConstantMobility_hole,Parameter=mutunnel,Value=0.05 Material=Silicon,Model=ConstantMobility_hole_aniso,Parameter=Exponent,Value=2.2 Material=Silicon,Model=ConstantMobility_hole_aniso,Parameter=mumax,Value=4.7050e +02 Material=Silicon,Model=ConstantMobility_hole_aniso,Parameter=mutunnel,Value=0.05 Material=Silicon,Model=Coulomb2DMobility_electron,Parameter=E0,Value=2.0000e+05 Material=Silicon,Model=Coulomb2DMobility_electron,Parameter=En_exp,Value=2 Material=Silicon,Model=Coulomb2DMobility_electron,Parameter=Nc_exp1,Value=1 Material=Silicon,Model=Coulomb2DMobility_electron,Parameter=Nc_exp2,Value=0.5 Material=Silicon,Model=Coulomb2DMobility_electron,Parameter=T_exp,Value=1 Material=Silicon,Model=Coulomb2DMobility_electron,Parameter=c_exp,Value=1.5 Material=Silicon,Model=Coulomb2DMobility_electron,Parameter=c_trans,Value=1.0000 e+18 Material=Silicon,Model=Coulomb2DMobility_electron,Parameter=l_crit,Value=1.0000e -06 Material=Silicon,Model=Coulomb2DMobility_electron,Parameter=mu1,Value=40 Material=Silicon,Model=Coulomb2DMobility_electron_aniso,Parameter=E0,Value=2.000 0e+05 Material=Silicon,Model=Coulomb2DMobility_electron_aniso,Parameter=En_exp,Value=2 Material=Silicon,Model=Coulomb2DMobility_electron_aniso,Parameter=Nc_exp1,Value= 1 Material=Silicon,Model=Coulomb2DMobility_electron_aniso,Parameter=Nc_exp2,Value= 0.5 Material=Silicon,Model=Coulomb2DMobility_electron_aniso,Parameter=T_exp,Value=1 Material=Silicon,Model=Coulomb2DMobility_electron_aniso,Parameter=c_exp,Value=1. 5 Material=Silicon,Model=Coulomb2DMobility_electron_aniso,Parameter=c_trans,Value= 1.0000e+18 Material=Silicon,Model=Coulomb2DMobility_electron_aniso,Parameter=l_crit,Value=1 .0000e-06 Material=Silicon,Model=Coulomb2DMobility_electron_aniso,Parameter=mu1,Value=40 Material=Silicon,Model=Coulomb2DMobility_hole,Parameter=E0,Value=2.0000e+05 Material=Silicon,Model=Coulomb2DMobility_hole,Parameter=En_exp,Value=2 Material=Silicon,Model=Coulomb2DMobility_hole,Parameter=Nc_exp1,Value=1 Material=Silicon,Model=Coulomb2DMobility_hole,Parameter=Nc_exp2,Value=0.5 Material=Silicon,Model=Coulomb2DMobility_hole,Parameter=T_exp,Value=1 Material=Silicon,Model=Coulomb2DMobility_hole,Parameter=c_exp,Value=1.5 Material=Silicon,Model=Coulomb2DMobility_hole,Parameter=c_trans,Value=1.0000e+18 Material=Silicon,Model=Coulomb2DMobility_hole,Parameter=l_crit,Value=1.0000e-06 Material=Silicon,Model=Coulomb2DMobility_hole,Parameter=mu1,Value=40 Material=Silicon,Model=Coulomb2DMobility_hole_aniso,Parameter=E0,Value=2.0000e+0 5 Material=Silicon,Model=Coulomb2DMobility_hole_aniso,Parameter=En_exp,Value=2

Material=Silicon,Model=Coulomb2DMobility_hole_aniso,Parameter=Nc_exp1,Value=1 Material=Silicon,Model=Coulomb2DMobility_hole_aniso,Parameter=Nc_exp2,Value=0.5 Material=Silicon,Model=Coulomb2DMobility_hole_aniso,Parameter=T_exp,Value=1 Material=Silicon,Model=Coulomb2DMobility_hole_aniso,Parameter=c_exp,Value=1.5 Material=Silicon,Model=Coulomb2DMobility_hole_aniso,Parameter=c_trans,Value=1.00 00e+18 Material=Silicon,Model=Coulomb2DMobility_hole_aniso,Parameter=l_crit,Value=1.000 0e-06 Material=Silicon,Model=Coulomb2DMobility_hole_aniso,Parameter=mu1,Value=40 Material=Silicon,Model=DOSMass_electron,Parameter=Nc300,Value=2.8900e+19 Material=Silicon,Model=DOSMass_electron,Parameter=a,Value=0.1905 Material=Silicon,Model=DOSMass_electron,Parameter=ml,Value=0.9163 Material=Silicon,Model=DOSMass_electron,Parameter=mm,Value=0.0000e+00 Material=Silicon,Model=DOSMass_hole,Parameter=Nv300,Value=3.1400e+19 Material=Silicon,Model=DOSMass_hole,Parameter=a,Value=0.443587 Material=Silicon,Model=DOSMass_hole,Parameter=b,Value=3.6095e-03 Material=Silicon,Model=DOSMass_hole,Parameter=c,Value=1.1735e-04 Material=Silicon,Model=DOSMass_hole,Parameter=d,Value=1.2632e-06 Material=Silicon,Model=DOSMass_hole,Parameter=e,Value=3.0256e-09 Material=Silicon,Model=DOSMass_hole,Parameter=f,Value=4.6834e-03 Material=Silicon,Model=DOSMass_hole,Parameter=g,Value=2.2869e-04 Material=Silicon,Model=DOSMass_hole,Parameter=h,Value=7.4693e-07 Material=Silicon,Model=DOSMass_hole,Parameter=i,Value=1.7275e-09 Material=Silicon,Model=DOSMass_hole,Parameter=mm,Value=0.0000e+00 Material=Silicon,Model=DirectTunnelling,Parameter=E0_e,Value=0.0000e+00 Material=Silicon,Model=DirectTunnelling,Parameter=E0_h,Value=0.0000e+00 Material=Silicon,Model=DirectTunnelling,Parameter=E1_e,Value=0.0000e+00 Material=Silicon,Model=DirectTunnelling,Parameter=E1_h,Value=0.0000e+00 Material=Silicon,Model=DirectTunnelling,Parameter=E2_e,Value=0.0000e+00 Material=Silicon,Model=DirectTunnelling,Parameter=E2_h,Value=0.0000e+00 Material=Silicon,Model=DirectTunnelling,Parameter=E_F_M,Value=11.7 Material=Silicon,Model=DirectTunnelling,Parameter=E_barrier_e,Value=3.15 Material=Silicon,Model=DirectTunnelling,Parameter=E_barrier_h,Value=4.73 Material=Silicon,Model=DirectTunnelling,Parameter=eps_ins,Value=2.13 Material=Silicon,Model=DirectTunnelling,Parameter=m_M,Value=1 Material=Silicon,Model=DirectTunnelling,Parameter=m_dos_e,Value=0.32 Material=Silicon,Model=DirectTunnelling,Parameter=m_dos_h,Value=0.0000e+00 Material=Silicon,Model=DirectTunnelling,Parameter=m_ins_e,Value=0.5 Material=Silicon,Model=DirectTunnelling,Parameter=m_ins_h,Value=0.77 Material=Silicon,Model=DirectTunnelling,Parameter=m_s_e,Value=0.19 Material=Silicon,Model=DirectTunnelling,Parameter=m_s_h,Value=0.16 Material=Silicon,Model=DopingDependence_electron,Parameter=Ar_N0,Value=1.2500e+1 7 Material=Silicon,Model=DopingDependence_electron,Parameter=Ar_a,Value=0.88 Material=Silicon,Model=DopingDependence_electron,Parameter=Ar_alN,Value=2.4 Material=Silicon,Model=DopingDependence_electron,Parameter=Ar_ala,Value=-1.4600e -01 Material=Silicon,Model=DopingDependence_electron,Parameter=Ar_ald,Value=-2.3300e +00 Material=Silicon,Model=DopingDependence_electron,Parameter=Ar_alm,Value=-5.7000e -01 Material=Silicon,Model=DopingDependence_electron,Parameter=Ar_mud,Value=1.2520e+ 03 Material=Silicon,Model=DopingDependence_electron,Parameter=Ar_mumin,Value=88 Material=Silicon,Model=DopingDependence_electron,Parameter=Cr,Value=9.6800e+16 Material=Silicon,Model=DopingDependence_electron,Parameter=Cs,Value=3.4300e+20 Material=Silicon,Model=DopingDependence_electron,Parameter=Pc,Value=0.0000e+00 Material=Silicon,Model=DopingDependence_electron,Parameter=alpha,Value=0.68 Material=Silicon,Model=DopingDependence_electron,Parameter=beta,Value=2 Material=Silicon,Model=DopingDependence_electron,Parameter=mu1,Value=43.4

Material=Silicon,Model=DopingDependence_electron,Parameter=mumin1,Value=52.2 Material=Silicon,Model=DopingDependence_electron,Parameter=mumin2,Value=52.2 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=Ar_N0,Value=1.2 500e+17 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=Ar_a,Value=0.88 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=Ar_alN,Value=2. 4 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=Ar_ala,Value=-1 .4600e-01 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=Ar_ald,Value=-2 .3300e+00 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=Ar_alm,Value=-5 .7000e-01 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=Ar_mud,Value=1. 2520e+03 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=Ar_mumin,Value= 88 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=Cr,Value=9.6800 e+16 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=Cs,Value=3.4300 e+20 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=Pc,Value=0.0000 e+00 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=alpha,Value=0.6 8 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=beta,Value=2 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=mu1,Value=43.4 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=mumin1,Value=52 .2 Material=Silicon,Model=DopingDependence_electron_aniso,Parameter=mumin2,Value=52 .2 Material=Silicon,Model=DopingDependence_hole,Parameter=Ar_N0,Value=2.3500e+17 Material=Silicon,Model=DopingDependence_hole,Parameter=Ar_a,Value=0.88 Material=Silicon,Model=DopingDependence_hole,Parameter=Ar_alN,Value=2.4 Material=Silicon,Model=DopingDependence_hole,Parameter=Ar_ala,Value=-1.4600e-01 Material=Silicon,Model=DopingDependence_hole,Parameter=Ar_ald,Value=-2.2300e+00 Material=Silicon,Model=DopingDependence_hole,Parameter=Ar_alm,Value=-5.7000e-01 Material=Silicon,Model=DopingDependence_hole,Parameter=Ar_mud,Value=4.0700e+02 Material=Silicon,Model=DopingDependence_hole,Parameter=Ar_mumin,Value=54.3 Material=Silicon,Model=DopingDependence_hole,Parameter=Cr,Value=2.2300e+17 Material=Silicon,Model=DopingDependence_hole,Parameter=Cs,Value=6.1000e+20 Material=Silicon,Model=DopingDependence_hole,Parameter=Pc,Value=9.2300e+16 Material=Silicon,Model=DopingDependence_hole,Parameter=alpha,Value=0.719 Material=Silicon,Model=DopingDependence_hole,Parameter=beta,Value=2 Material=Silicon,Model=DopingDependence_hole,Parameter=mu1,Value=29 Material=Silicon,Model=DopingDependence_hole,Parameter=mumin1,Value=44.9 Material=Silicon,Model=DopingDependence_hole,Parameter=mumin2,Value=0.0000e+00 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=Ar_N0,Value=2.3500e +17 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=Ar_a,Value=0.88 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=Ar_alN,Value=2.4 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=Ar_ala,Value=-1.460 0e-01 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=Ar_ald,Value=-2.230 0e+00 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=Ar_alm,Value=-5.700 0e-01 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=Ar_mud,Value=4.0700 e+02 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=Ar_mumin,Value=54.3

Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=Cr,Value=2.2300e+17 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=Cs,Value=6.1000e+20 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=Pc,Value=9.2300e+16 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=alpha,Value=0.719 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=beta,Value=2 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=mu1,Value=29 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=mumin1,Value=44.9 Material=Silicon,Model=DopingDependence_hole_aniso,Parameter=mumin2,Value=0.0000 e+00 Material=Silicon,Model=EnergyFlux_electron,Parameter=e_relax_times_ratio,Value=0 .6 Material=Silicon,Model=EnergyFlux_electron,Parameter=energy_flux_coef_ele,Value= 0.6 Material=Silicon,Model=EnergyFlux_hole,Parameter=energy_flux_coef_hol,Value=0.6 Material=Silicon,Model=EnergyFlux_hole,Parameter=h_relax_times_ratio,Value=0.6 Material=Silicon,Model=EnergyRelaxationTime_electron,Parameter=(tau_w)_ele,Value =0.3 Material=Silicon,Model=EnergyRelaxationTime_hole,Parameter=(tau_w)_hol,Value=0.2 5 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=B,Value=4.7500e+ 07 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=C,Value=5.8000e+ 02 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=alpha,Value=0.00 00e+00 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=aother,Value=0.0 000e+00 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=delta,Value=5.82 00e+14 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=eta,Value=5.8200 e+30 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=l_crit,Value=1.0 000e-06 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=lambda,Value=0.1 25 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=maxexp,Value=1.0 000e+100 Material=Silicon,Model=EnormalDependence_100_electron,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=B,Value=4. 7500e+07 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=C,Value=5. 8000e+02 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=alpha,Valu e=0.0000e+00 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=aother,Val ue=0.0000e+00 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=delta,Valu e=5.8200e+14 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=eta,Value= 5.8200e+30 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=k,Value=1

Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=l_crit,Val ue=1.0000e-06 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=lambda,Val ue=0.125 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=maxexp,Val ue=1.0000e+100 Material=Silicon,Model=EnormalDependence_100_electron_aniso,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=B,Value=9.9250e+06 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=C,Value=2.9470e+03 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=alpha,Value=0.0000e+ 00 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=aother,Value=0.0000e +00 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=delta,Value=2.0546e+ 14 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=eta,Value=2.0546e+30 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=l_crit,Value=1.0000e -06 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=lambda,Value=0.0317 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=maxexp,Value=1.0000e +100 Material=Silicon,Model=EnormalDependence_100_hole,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=B,Value=9.9250 e+06 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=C,Value=2.9470 e+03 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=alpha,Value=0. 0000e+00 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=aother,Value=0 .0000e+00 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=delta,Value=2. 0546e+14 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=eta,Value=2.05 46e+30 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=l_crit,Value=1 .0000e-06 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=lambda,Value=0 .0317 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=maxexp,Value=1 .0000e+100 Material=Silicon,Model=EnormalDependence_100_hole_aniso,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=B,Value=4.7500e+ 07 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=C,Value=5.8000e+ 02 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=alpha,Value=0.00

00e+00 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=aother,Value=0.0 000e+00 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=delta,Value=5.82 00e+14 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=eta,Value=5.8200 e+30 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=l_crit,Value=1.0 000e-06 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=lambda,Value=0.1 25 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=maxexp,Value=1.0 000e+100 Material=Silicon,Model=EnormalDependence_110_electron,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=B,Value=4. 7500e+07 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=C,Value=5. 8000e+02 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=alpha,Valu e=0.0000e+00 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=aother,Val ue=0.0000e+00 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=delta,Valu e=5.8200e+14 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=eta,Value= 5.8200e+30 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=l_crit,Val ue=1.0000e-06 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=lambda,Val ue=0.125 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=maxexp,Val ue=1.0000e+100 Material=Silicon,Model=EnormalDependence_110_electron_aniso,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=B,Value=9.9250e+06 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=C,Value=2.9470e+03 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=alpha,Value=0.0000e+ 00 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=aother,Value=0.0000e +00 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=delta,Value=2.0546e+ 14 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=eta,Value=2.0546e+30 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=l_crit,Value=1.0000e -06 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=lambda,Value=0.0317 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=maxexp,Value=1.0000e +100 Material=Silicon,Model=EnormalDependence_110_hole,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=A,Value=2

Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=B,Value=9.9250 e+06 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=C,Value=2.9470 e+03 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=alpha,Value=0. 0000e+00 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=aother,Value=0 .0000e+00 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=delta,Value=2. 0546e+14 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=eta,Value=2.05 46e+30 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=l_crit,Value=1 .0000e-06 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=lambda,Value=0 .0317 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=maxexp,Value=1 .0000e+100 Material=Silicon,Model=EnormalDependence_110_hole_aniso,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=B,Value=4.7500e+ 07 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=C,Value=5.8000e+ 02 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=alpha,Value=0.00 00e+00 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=aother,Value=0.0 000e+00 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=delta,Value=5.82 00e+14 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=eta,Value=5.8200 e+30 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=l_crit,Value=1.0 000e-06 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=lambda,Value=0.1 25 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=maxexp,Value=1.0 000e+100 Material=Silicon,Model=EnormalDependence_111_electron,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=B,Value=4. 7500e+07 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=C,Value=5. 8000e+02 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=alpha,Valu e=0.0000e+00 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=aother,Val ue=0.0000e+00 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=delta,Valu

e=5.8200e+14 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=eta,Value= 5.8200e+30 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=l_crit,Val ue=1.0000e-06 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=lambda,Val ue=0.125 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=maxexp,Val ue=1.0000e+100 Material=Silicon,Model=EnormalDependence_111_electron_aniso,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=B,Value=9.9250e+06 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=C,Value=2.9470e+03 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=alpha,Value=0.0000e+ 00 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=aother,Value=0.0000e +00 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=delta,Value=2.0546e+ 14 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=eta,Value=2.0546e+30 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=l_crit,Value=1.0000e -06 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=lambda,Value=0.0317 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=maxexp,Value=1.0000e +100 Material=Silicon,Model=EnormalDependence_111_hole,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=B,Value=9.9250 e+06 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=C,Value=2.9470 e+03 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=alpha,Value=0. 0000e+00 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=aother,Value=0 .0000e+00 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=delta,Value=2. 0546e+14 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=eta,Value=2.05 46e+30 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=l_crit,Value=1 .0000e-06 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=lambda,Value=0 .0317 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=maxexp,Value=1 .0000e+100 Material=Silicon,Model=EnormalDependence_111_hole_aniso,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_electron,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_electron,Parameter=B,Value=4.7500e+07 Material=Silicon,Model=EnormalDependence_electron,Parameter=C,Value=5.8000e+02 Material=Silicon,Model=EnormalDependence_electron,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_electron,Parameter=N1,Value=1

Material=Silicon,Model=EnormalDependence_electron,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_electron,Parameter=alpha,Value=0.0000e+ 00 Material=Silicon,Model=EnormalDependence_electron,Parameter=aother,Value=0.0000e +00 Material=Silicon,Model=EnormalDependence_electron,Parameter=delta,Value=5.8200e+ 14 Material=Silicon,Model=EnormalDependence_electron,Parameter=eta,Value=5.8200e+30 Material=Silicon,Model=EnormalDependence_electron,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_electron,Parameter=l_crit,Value=1.0000e -06 Material=Silicon,Model=EnormalDependence_electron,Parameter=lambda,Value=0.125 Material=Silicon,Model=EnormalDependence_electron,Parameter=maxexp,Value=1.0000e +100 Material=Silicon,Model=EnormalDependence_electron,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=B,Value=4.7500 e+07 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=C,Value=5.8000 e+02 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=alpha,Value=0. 0000e+00 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=aother,Value=0 .0000e+00 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=delta,Value=5. 8200e+14 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=eta,Value=5.82 00e+30 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=l_crit,Value=1 .0000e-06 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=lambda,Value=0 .125 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=maxexp,Value=1 .0000e+100 Material=Silicon,Model=EnormalDependence_electron_aniso,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_hole,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_hole,Parameter=B,Value=9.9250e+06 Material=Silicon,Model=EnormalDependence_hole,Parameter=C,Value=2.9470e+03 Material=Silicon,Model=EnormalDependence_hole,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_hole,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_hole,Parameter=N2,Value=1 Material=Silicon,Model=EnormalDependence_hole,Parameter=alpha,Value=0.0000e+00 Material=Silicon,Model=EnormalDependence_hole,Parameter=aother,Value=0.0000e+00 Material=Silicon,Model=EnormalDependence_hole,Parameter=delta,Value=2.0546e+14 Material=Silicon,Model=EnormalDependence_hole,Parameter=eta,Value=2.0546e+30 Material=Silicon,Model=EnormalDependence_hole,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_hole,Parameter=l_crit,Value=1.0000e-06 Material=Silicon,Model=EnormalDependence_hole,Parameter=lambda,Value=0.0317 Material=Silicon,Model=EnormalDependence_hole,Parameter=maxexp,Value=1.0000e+100 Material=Silicon,Model=EnormalDependence_hole,Parameter=nu,Value=1 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=A,Value=2 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=B,Value=9.9250e+06 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=C,Value=2.9470e+03 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=N0,Value=1 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=N1,Value=1 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=N2,Value=1

Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=alpha,Value=0.0000 e+00 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=aother,Value=0.000 0e+00 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=delta,Value=2.0546 e+14 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=eta,Value=2.0546e+ 30 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=k,Value=1 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=l_crit,Value=1.000 0e-06 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=lambda,Value=0.031 7 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=maxexp,Value=1.000 0e+100 Material=Silicon,Model=EnormalDependence_hole_aniso,Parameter=nu,Value=1 Material=Silicon,Model=Epsilon,Parameter=epsilon,Value=11.7 Material=Silicon,Model=Epsilon_aniso,Parameter=epsilon,Value=11.7 Material=Silicon,Model=Exciton,Parameter=Eex,Value=0.015 Material=Silicon,Model=Exciton,Parameter=ex_eXsection,Value=1.0000e-08 Material=Silicon,Model=Exciton,Parameter=ex_hXsection,Value=1.0000e-08 Material=Silicon,Model=Exciton,Parameter=gamma,Value=0.25 Material=Silicon,Model=Exciton,Parameter=gex,Value=4 Material=Silicon,Model=Exciton,Parameter=l_diff,Value=1.0000e-03 Material=Silicon,Model=Exciton,Parameter=tau,Value=1.0000e-07 Material=Silicon,Model=Exciton,Parameter=tau_trap,Value=1.0000e-08 Material=Silicon,Model=Exciton,Parameter=vel,Value=1.0000e+08 Material=Silicon,Model=Exciton,Parameter=vth,Value=1.0000e+07 Material=Silicon,Model=Exciton,Parameter=vth_e,Value=1.0000e+03 Material=Silicon,Model=Exciton,Parameter=vth_h,Value=1.0000e+03 Material=Silicon,Model=Fiegna,Parameter=Prepel,Value=1 Material=Silicon,Model=Fiegna,Parameter=Ptotal,Value=0.0000e+00 Material=Silicon,Model=Fiegna,Parameter=eA,Value=4.8700e+04 Material=Silicon,Model=Fiegna,Parameter=eBL12,Value=2.6000e-04 Material=Silicon,Model=Fiegna,Parameter=eBL23,Value=1.5000e-05 Material=Silicon,Model=Fiegna,Parameter=eBar0,Value=3.1 Material=Silicon,Model=Fiegna,Parameter=eChi,Value=1.3000e+08 Material=Silicon,Model=Fiegna,Parameter=eLins,Value=3.2000e-07 Material=Silicon,Model=Fiegna,Parameter=eps_ins,Value=3.1 Material=Silicon,Model=Fiegna,Parameter=hA,Value=4.8700e+04 Material=Silicon,Model=Fiegna,Parameter=hBL12,Value=2.6000e-04 Material=Silicon,Model=Fiegna,Parameter=hBL23,Value=1.5000e-05 Material=Silicon,Model=Fiegna,Parameter=hBar0,Value=4.7 Material=Silicon,Model=Fiegna,Parameter=hChi,Value=1.3000e+08 Material=Silicon,Model=Fiegna,Parameter=hLins,Value=3.2000e-07 Material=Silicon,Model=FlickerGRNoise,Parameter=e_alpha_H,Value=2.0000e-03 Material=Silicon,Model=FlickerGRNoise,Parameter=e_tau0,Value=1.0000e-06 Material=Silicon,Model=FlickerGRNoise,Parameter=e_tau1,Value=3.0000e-04 Material=Silicon,Model=FlickerGRNoise,Parameter=h_alpha_H,Value=2.0000e-03 Material=Silicon,Model=FlickerGRNoise,Parameter=h_tau0,Value=1.0000e-06 Material=Silicon,Model=FlickerGRNoise,Parameter=h_tau1,Value=3.0000e-04 Material=Silicon,Model=Fowler,Parameter=Ae,Value=1.8700e-07 Material=Silicon,Model=Fowler,Parameter=Aw,Value=1.2300e-06 Material=Silicon,Model=Fowler,Parameter=Be,Value=1.8800e+08 Material=Silicon,Model=Fowler,Parameter=Bw,Value=2.3700e+08 Material=Silicon,Model=Fowler,Parameter=Gm,Value=1 Material=Silicon,Model=FreeCarrierAbsorption,Parameter=fcaalpha_n,Value=4.0000e18 Material=Silicon,Model=FreeCarrierAbsorption,Parameter=fcaalpha_p,Value=8.0000e18

Material=Silicon,Model=Hallscattering,Parameter=rn,Value=1.15 Material=Silicon,Model=Hallscattering,Parameter=rp,Value=-7.0000e-01 Material=Silicon,Model=HeatFlux_electron,Parameter=hf_n,Value=1 Material=Silicon,Model=HeatFlux_hole,Parameter=hf_p,Value=1 Material=Silicon,Model=HeavyIon,Parameter=Ep,Value=3.6 Material=Silicon,Model=HeavyIon,Parameter=a_1,Value=0.0000e+00 Material=Silicon,Model=HeavyIon,Parameter=a_2,Value=0.0000e+00 Material=Silicon,Model=HeavyIon,Parameter=a_3,Value=0.0000e+00 Material=Silicon,Model=HeavyIon,Parameter=a_4,Value=0.0000e+00 Material=Silicon,Model=HeavyIon,Parameter=c_1,Value=0.0000e+00 Material=Silicon,Model=HeavyIon,Parameter=c_2,Value=0.0000e+00 Material=Silicon,Model=HeavyIon,Parameter=c_3,Value=1 Material=Silicon,Model=HeavyIon,Parameter=c_4,Value=0.0000e+00 Material=Silicon,Model=HeavyIon,Parameter=k_hi,Value=1 Material=Silicon,Model=HeavyIon,Parameter=s_hi,Value=2.0000e-12 Material=Silicon,Model=HighFieldDependence_electron,Parameter=A_vsat,Value=1.070 0e+07 Material=Silicon,Model=HighFieldDependence_electron,Parameter=B_vsat,Value=0.000 0e+00 Material=Silicon,Model=HighFieldDependence_electron,Parameter=E0_TrEf,Value=4.00 00e+03 Material=Silicon,Model=HighFieldDependence_electron,Parameter=K_dT,Value=0.2 Material=Silicon,Model=HighFieldDependence_electron,Parameter=Ksmooth_TrEf,Value =1 Material=Silicon,Model=HighFieldDependence_electron,Parameter=alpha,Value=0.0000 e+00 Material=Silicon,Model=HighFieldDependence_electron,Parameter=beta0,Value=1.109 Material=Silicon,Model=HighFieldDependence_electron,Parameter=betaexp,Value=0.66 Material=Silicon,Model=HighFieldDependence_electron,Parameter=vsat0,Value=1.0700 e+07 Material=Silicon,Model=HighFieldDependence_electron,Parameter=vsat_min,Value=5.0 000e+05 Material=Silicon,Model=HighFieldDependence_electron,Parameter=vsatexp,Value=0.87 Material=Silicon,Model=HighFieldDependence_electron_aniso,Parameter=A_vsat,Value =1.0700e+07 Material=Silicon,Model=HighFieldDependence_electron_aniso,Parameter=B_vsat,Value =0.0000e+00 Material=Silicon,Model=HighFieldDependence_electron_aniso,Parameter=E0_TrEf,Valu e=4.0000e+03 Material=Silicon,Model=HighFieldDependence_electron_aniso,Parameter=K_dT,Value=0 .2 Material=Silicon,Model=HighFieldDependence_electron_aniso,Parameter=Ksmooth_TrEf ,Value=1 Material=Silicon,Model=HighFieldDependence_electron_aniso,Parameter=alpha,Value= 0.0000e+00 Material=Silicon,Model=HighFieldDependence_electron_aniso,Parameter=beta0,Value= 1.109 Material=Silicon,Model=HighFieldDependence_electron_aniso,Parameter=betaexp,Valu e=0.66 Material=Silicon,Model=HighFieldDependence_electron_aniso,Parameter=vsat0,Value= 1.0700e+07 Material=Silicon,Model=HighFieldDependence_electron_aniso,Parameter=vsat_min,Val ue=5.0000e+05 Material=Silicon,Model=HighFieldDependence_electron_aniso,Parameter=vsatexp,Valu e=0.87 Material=Silicon,Model=HighFieldDependence_hole,Parameter=A_vsat,Value=8.3700e+0 6 Material=Silicon,Model=HighFieldDependence_hole,Parameter=B_vsat,Value=0.0000e+0 0 Material=Silicon,Model=HighFieldDependence_hole,Parameter=E0_TrEf,Value=4.0000e+

03 Material=Silicon,Model=HighFieldDependence_hole,Parameter=K_dT,Value=0.2 Material=Silicon,Model=HighFieldDependence_hole,Parameter=Ksmooth_TrEf,Value=1 Material=Silicon,Model=HighFieldDependence_hole,Parameter=alpha,Value=0.0000e+00 Material=Silicon,Model=HighFieldDependence_hole,Parameter=beta0,Value=1.213 Material=Silicon,Model=HighFieldDependence_hole,Parameter=betaexp,Value=0.17 Material=Silicon,Model=HighFieldDependence_hole,Parameter=vsat0,Value=8.3700e+06 Material=Silicon,Model=HighFieldDependence_hole,Parameter=vsat_min,Value=5.0000e +05 Material=Silicon,Model=HighFieldDependence_hole,Parameter=vsatexp,Value=0.52 Material=Silicon,Model=HighFieldDependence_hole_aniso,Parameter=A_vsat,Value=8.3 700e+06 Material=Silicon,Model=HighFieldDependence_hole_aniso,Parameter=B_vsat,Value=0.0 000e+00 Material=Silicon,Model=HighFieldDependence_hole_aniso,Parameter=E0_TrEf,Value=4. 0000e+03 Material=Silicon,Model=HighFieldDependence_hole_aniso,Parameter=K_dT,Value=0.2 Material=Silicon,Model=HighFieldDependence_hole_aniso,Parameter=Ksmooth_TrEf,Val ue=1 Material=Silicon,Model=HighFieldDependence_hole_aniso,Parameter=alpha,Value=0.00 00e+00 Material=Silicon,Model=HighFieldDependence_hole_aniso,Parameter=beta0,Value=1.21 3 Material=Silicon,Model=HighFieldDependence_hole_aniso,Parameter=betaexp,Value=0. 17 Material=Silicon,Model=HighFieldDependence_hole_aniso,Parameter=vsat0,Value=8.37 00e+06 Material=Silicon,Model=HighFieldDependence_hole_aniso,Parameter=vsat_min,Value=5 .0000e+05 Material=Silicon,Model=HighFieldDependence_hole_aniso,Parameter=vsatexp,Value=0. 52 Material=Silicon,Model=HurkxTrapAssistedTunneling,Parameter=mt_e,Value=0.5 Material=Silicon,Model=HurkxTrapAssistedTunneling,Parameter=mt_h,Value=0.5 Material=Silicon,Model=HydroHighFieldDependence_electron,Parameter=beta0,Value=0 .6 Material=Silicon,Model=HydroHighFieldDependence_electron,Parameter=betaexp,Value =0.01 Material=Silicon,Model=HydroHighFieldDependence_electron_aniso,Parameter=beta0,V alue=0.6 Material=Silicon,Model=HydroHighFieldDependence_electron_aniso,Parameter=betaexp ,Value=0.01 Material=Silicon,Model=HydroHighFieldDependence_hole,Parameter=beta0,Value=0.6 Material=Silicon,Model=HydroHighFieldDependence_hole,Parameter=betaexp,Value=0.0 1 Material=Silicon,Model=HydroHighFieldDependence_hole_aniso,Parameter=beta0,Value =0.6 Material=Silicon,Model=HydroHighFieldDependence_hole_aniso,Parameter=betaexp,Val ue=0.01 Material=Silicon,Model=Ionization,Parameter=E_As_0,Value=0.054 Material=Silicon,Model=Ionization,Parameter=E_B_0,Value=0.045 Material=Silicon,Model=Ionization,Parameter=E_In_0,Value=0.16 Material=Silicon,Model=Ionization,Parameter=E_NDopant_0,Value=0.045 Material=Silicon,Model=Ionization,Parameter=E_N_0,Value=0.045 Material=Silicon,Model=Ionization,Parameter=E_PDopant_0,Value=0.045 Material=Silicon,Model=Ionization,Parameter=E_P_0,Value=0.045 Material=Silicon,Model=Ionization,Parameter=E_Sb_0,Value=0.039 Material=Silicon,Model=Ionization,Parameter=NaCrit,Value=1.0000e+22 Material=Silicon,Model=Ionization,Parameter=NdCrit,Value=1.0000e+22 Material=Silicon,Model=Ionization,Parameter=Xsec_As,Value=1.0000e-12 Material=Silicon,Model=Ionization,Parameter=Xsec_B,Value=1.0000e-12

Material=Silicon,Model=Ionization,Parameter=Xsec_In,Value=1.0000e-12 Material=Silicon,Model=Ionization,Parameter=Xsec_N,Value=1.0000e-12 Material=Silicon,Model=Ionization,Parameter=Xsec_NDopant,Value=1.0000e-12 Material=Silicon,Model=Ionization,Parameter=Xsec_P,Value=1.0000e-12 Material=Silicon,Model=Ionization,Parameter=Xsec_PDopant,Value=1.0000e-12 Material=Silicon,Model=Ionization,Parameter=Xsec_Sb,Value=1.0000e-12 Material=Silicon,Model=Ionization,Parameter=alpha_As,Value=3.1000e-08 Material=Silicon,Model=Ionization,Parameter=alpha_B,Value=3.1000e-08 Material=Silicon,Model=Ionization,Parameter=alpha_In,Value=3.1000e-08 Material=Silicon,Model=Ionization,Parameter=alpha_N,Value=3.1000e-08 Material=Silicon,Model=Ionization,Parameter=alpha_NDopant,Value=3.1000e-08 Material=Silicon,Model=Ionization,Parameter=alpha_P,Value=3.1000e-08 Material=Silicon,Model=Ionization,Parameter=alpha_PDopant,Value=3.1000e-08 Material=Silicon,Model=Ionization,Parameter=alpha_Sb,Value=3.1000e-08 Material=Silicon,Model=Ionization,Parameter=g_As,Value=2 Material=Silicon,Model=Ionization,Parameter=g_B,Value=4 Material=Silicon,Model=Ionization,Parameter=g_In,Value=4 Material=Silicon,Model=Ionization,Parameter=g_N,Value=2 Material=Silicon,Model=Ionization,Parameter=g_NDopant,Value=2 Material=Silicon,Model=Ionization,Parameter=g_P,Value=2 Material=Silicon,Model=Ionization,Parameter=g_PDopant,Value=4 Material=Silicon,Model=Ionization,Parameter=g_Sb,Value=2 Material=Silicon,Model=Kappa,Parameter=1/kappa,Value=0.03 Material=Silicon,Model=Kappa,Parameter=1/kappa_b,Value=1.5600e-03 Material=Silicon,Model=Kappa,Parameter=1/kappa_c,Value=1.6500e-06 Material=Silicon,Model=Kappa,Parameter=kappa,Value=1.5 Material=Silicon,Model=Kappa,Parameter=kappa_b,Value=0.0000e+00 Material=Silicon,Model=Kappa,Parameter=kappa_c,Value=0.0000e+00 Material=Silicon,Model=Kappa_aniso,Parameter=1/kappa,Value=0.03 Material=Silicon,Model=Kappa_aniso,Parameter=1/kappa_b,Value=1.5600e-03 Material=Silicon,Model=Kappa_aniso,Parameter=1/kappa_c,Value=1.6500e-06 Material=Silicon,Model=Kappa_aniso,Parameter=kappa,Value=1.5 Material=Silicon,Model=Kappa_aniso,Parameter=kappa_b,Value=0.0000e+00 Material=Silicon,Model=Kappa_aniso,Parameter=kappa_c,Value=0.0000e+00 Material=Silicon,Model=Lackner,Parameter=a_e,Value=1.3160e+06 Material=Silicon,Model=Lackner,Parameter=a_h,Value=1.8180e+06 Material=Silicon,Model=Lackner,Parameter=b_e,Value=1.4740e+06 Material=Silicon,Model=Lackner,Parameter=b_h,Value=2.0360e+06 Material=Silicon,Model=Lackner,Parameter=hbarOmega_e,Value=0.063 Material=Silicon,Model=Lackner,Parameter=hbarOmega_h,Value=0.063 Material=Silicon,Model=Lackner_aniso,Parameter=a_e,Value=1.3160e+06 Material=Silicon,Model=Lackner_aniso,Parameter=a_h,Value=1.8180e+06 Material=Silicon,Model=Lackner_aniso,Parameter=b_e,Value=1.4740e+06 Material=Silicon,Model=Lackner_aniso,Parameter=b_h,Value=2.0360e+06 Material=Silicon,Model=Lackner_aniso,Parameter=hbarOmega_e,Value=0.063 Material=Silicon,Model=Lackner_aniso,Parameter=hbarOmega_h,Value=0.063 Material=Silicon,Model=LatticeHeatCapacity,Parameter=cv,Value=1.63 Material=Silicon,Model=LatticeHeatCapacity,Parameter=cv_b,Value=0.0000e+00 Material=Silicon,Model=LatticeHeatCapacity,Parameter=cv_c,Value=0.0000e+00 Material=Silicon,Model=LatticeHeatCapacity,Parameter=cv_d,Value=0.0000e+00 Material=Silicon,Model=Lucky,Parameter=Prepel,Value=1 Material=Silicon,Model=Lucky,Parameter=Ptotal,Value=0.0000e+00 Material=Silicon,Model=Lucky,Parameter=Pvertical,Value=1 Material=Silicon,Model=Lucky,Parameter=eBL12,Value=2.6000e-04 Material=Silicon,Model=Lucky,Parameter=eBL23,Value=3.0000e-05 Material=Silicon,Model=Lucky,Parameter=eBar0,Value=3.1 Material=Silicon,Model=Lucky,Parameter=eLins,Value=3.2000e-07 Material=Silicon,Model=Lucky,Parameter=eLsem,Value=8.9000e-07 Material=Silicon,Model=Lucky,Parameter=eLsemR,Value=6.2000e-06 Material=Silicon,Model=Lucky,Parameter=eps_ins,Value=3.1

Material=Silicon,Model=Lucky,Parameter=hBL12,Value=2.6000e-04 Material=Silicon,Model=Lucky,Parameter=hBL23,Value=3.0000e-05 Material=Silicon,Model=Lucky,Parameter=hBar0,Value=4.7 Material=Silicon,Model=Lucky,Parameter=hLins,Value=3.2000e-07 Material=Silicon,Model=Lucky,Parameter=hLsem,Value=1.0000e-07 Material=Silicon,Model=Lucky,Parameter=hLsemR,Value=6.2000e-06 Material=Silicon,Model=MLDAQM,Parameter=eLambda,Value=2.3500e-07 Material=Silicon,Model=MLDAQM,Parameter=hLambda,Value=2.5000e-07 Material=Silicon,Model=MonopolarGRNoise,Parameter=e_alpha,Value=1 Material=Silicon,Model=MonopolarGRNoise,Parameter=e_tau,Value=1.0000e-07 Material=Silicon,Model=MonopolarGRNoise,Parameter=h_alpha,Value=1 Material=Silicon,Model=MonopolarGRNoise,Parameter=h_tau,Value=1.0000e-07 Material=Silicon,Model=Nasyrov,Parameter=SumNumber,Value=49 Material=Silicon,Model=Nasyrov,Parameter=Wopt,Value=2.8 Material=Silicon,Model=Nasyrov,Parameter=Wph,Value=0.06 Material=Silicon,Model=Nasyrov,Parameter=Wt,Value=1.4 Material=Silicon,Model=Nasyrov,Parameter=mt_e,Value=0.5 Material=Silicon,Model=Nasyrov,Parameter=mt_h,Value=0.5 Material=Silicon,Model=Nasyrov,Parameter=weightCapt,Value=1 Material=Silicon,Model=NegInterfaceChargeMobility_electron,Parameter=E0,Value=2. 0000e+05 Material=Silicon,Model=NegInterfaceChargeMobility_electron,Parameter=En_exp,Valu e=2 Material=Silicon,Model=NegInterfaceChargeMobility_electron,Parameter=Nc_exp1,Val ue=1 Material=Silicon,Model=NegInterfaceChargeMobility_electron,Parameter=Nc_exp2,Val ue=0.5 Material=Silicon,Model=NegInterfaceChargeMobility_electron,Parameter=T_exp,Value =1 Material=Silicon,Model=NegInterfaceChargeMobility_electron,Parameter=c_exp,Value =1.5 Material=Silicon,Model=NegInterfaceChargeMobility_electron,Parameter=c_trans,Val ue=1.0000e+18 Material=Silicon,Model=NegInterfaceChargeMobility_electron,Parameter=l_crit,Valu e=1.0000e-06 Material=Silicon,Model=NegInterfaceChargeMobility_electron,Parameter=mu1,Value=4 0 Material=Silicon,Model=NegInterfaceChargeMobility_electron_aniso,Parameter=E0,Va lue=2.0000e+05 Material=Silicon,Model=NegInterfaceChargeMobility_electron_aniso,Parameter=En_ex p,Value=2 Material=Silicon,Model=NegInterfaceChargeMobility_electron_aniso,Parameter=Nc_ex p1,Value=1 Material=Silicon,Model=NegInterfaceChargeMobility_electron_aniso,Parameter=Nc_ex p2,Value=0.5 Material=Silicon,Model=NegInterfaceChargeMobility_electron_aniso,Parameter=T_exp ,Value=1 Material=Silicon,Model=NegInterfaceChargeMobility_electron_aniso,Parameter=c_exp ,Value=1.5 Material=Silicon,Model=NegInterfaceChargeMobility_electron_aniso,Parameter=c_tra ns,Value=1.0000e+18 Material=Silicon,Model=NegInterfaceChargeMobility_electron_aniso,Parameter=l_cri t,Value=1.0000e-06 Material=Silicon,Model=NegInterfaceChargeMobility_electron_aniso,Parameter=mu1,V alue=40 Material=Silicon,Model=NegInterfaceChargeMobility_hole,Parameter=E0,Value=2.0000 e+05 Material=Silicon,Model=NegInterfaceChargeMobility_hole,Parameter=En_exp,Value=2 Material=Silicon,Model=NegInterfaceChargeMobility_hole,Parameter=Nc_exp1,Value=1 Material=Silicon,Model=NegInterfaceChargeMobility_hole,Parameter=Nc_exp2,Value=0

.5 Material=Silicon,Model=NegInterfaceChargeMobility_hole,Parameter=T_exp,Value=1 Material=Silicon,Model=NegInterfaceChargeMobility_hole,Parameter=c_exp,Value=1.5 Material=Silicon,Model=NegInterfaceChargeMobility_hole,Parameter=c_trans,Value=1 .0000e+18 Material=Silicon,Model=NegInterfaceChargeMobility_hole,Parameter=l_crit,Value=1. 0000e-06 Material=Silicon,Model=NegInterfaceChargeMobility_hole,Parameter=mu1,Value=40 Material=Silicon,Model=NegInterfaceChargeMobility_hole_aniso,Parameter=E0,Value= 2.0000e+05 Material=Silicon,Model=NegInterfaceChargeMobility_hole_aniso,Parameter=En_exp,Va lue=2 Material=Silicon,Model=NegInterfaceChargeMobility_hole_aniso,Parameter=Nc_exp1,V alue=1 Material=Silicon,Model=NegInterfaceChargeMobility_hole_aniso,Parameter=Nc_exp2,V alue=0.5 Material=Silicon,Model=NegInterfaceChargeMobility_hole_aniso,Parameter=T_exp,Val ue=1 Material=Silicon,Model=NegInterfaceChargeMobility_hole_aniso,Parameter=c_exp,Val ue=1.5 Material=Silicon,Model=NegInterfaceChargeMobility_hole_aniso,Parameter=c_trans,V alue=1.0000e+18 Material=Silicon,Model=NegInterfaceChargeMobility_hole_aniso,Parameter=l_crit,Va lue=1.0000e-06 Material=Silicon,Model=NegInterfaceChargeMobility_hole_aniso,Parameter=mu1,Value =40 Material=Silicon,Model=Okuto,Parameter=a_e,Value=0.426 Material=Silicon,Model=Okuto,Parameter=a_h,Value=0.243 Material=Silicon,Model=Okuto,Parameter=b_e,Value=4.8100e+05 Material=Silicon,Model=Okuto,Parameter=b_h,Value=6.5300e+05 Material=Silicon,Model=Okuto,Parameter=c_e,Value=3.0500e-04 Material=Silicon,Model=Okuto,Parameter=c_h,Value=5.3500e-04 Material=Silicon,Model=Okuto,Parameter=d_e,Value=6.8600e-04 Material=Silicon,Model=Okuto,Parameter=d_h,Value=5.6700e-04 Material=Silicon,Model=Okuto,Parameter=delta_e,Value=2 Material=Silicon,Model=Okuto,Parameter=delta_h,Value=2 Material=Silicon,Model=Okuto,Parameter=gamma_e,Value=1 Material=Silicon,Model=Okuto,Parameter=gamma_h,Value=1 Material=Silicon,Model=Okuto_aniso,Parameter=a_e,Value=0.426 Material=Silicon,Model=Okuto_aniso,Parameter=a_h,Value=0.243 Material=Silicon,Model=Okuto_aniso,Parameter=b_e,Value=4.8100e+05 Material=Silicon,Model=Okuto_aniso,Parameter=b_h,Value=6.5300e+05 Material=Silicon,Model=Okuto_aniso,Parameter=c_e,Value=3.0500e-04 Material=Silicon,Model=Okuto_aniso,Parameter=c_h,Value=5.3500e-04 Material=Silicon,Model=Okuto_aniso,Parameter=d_e,Value=6.8600e-04 Material=Silicon,Model=Okuto_aniso,Parameter=d_h,Value=5.6700e-04 Material=Silicon,Model=Okuto_aniso,Parameter=delta_e,Value=2 Material=Silicon,Model=Okuto_aniso,Parameter=delta_h,Value=2 Material=Silicon,Model=Okuto_aniso,Parameter=gamma_e,Value=1 Material=Silicon,Model=Okuto_aniso,Parameter=gamma_h,Value=1 Material=Silicon,Model=OldSlotboom,Parameter=Ebgn,Value=9.0000e-03 Material=Silicon,Model=OldSlotboom,Parameter=Nref,Value=1.0000e+17 Material=Silicon,Model=PhuMob_Arsenic,Parameter=alpha1_g_k,Value=-7.2169e-01 Material=Silicon,Model=PhuMob_Arsenic,Parameter=alpha1_g_m,Value=-1.5952e+00 Material=Silicon,Model=PhuMob_Arsenic,Parameter=alpha_As,Value=0.68 Material=Silicon,Model=PhuMob_Arsenic,Parameter=cref_D,Value=0.21 Material=Silicon,Model=PhuMob_Arsenic,Parameter=f_BH,Value=3.828 Material=Silicon,Model=PhuMob_Arsenic,Parameter=f_CW,Value=2.459 Material=Silicon,Model=PhuMob_Arsenic,Parameter=f_e,Value=1 Material=Silicon,Model=PhuMob_Arsenic,Parameter=f_gf,Value=1

Material=Silicon,Model=PhuMob_Arsenic,Parameter=f_scr,Value=0.0000e+00 Material=Silicon,Model=PhuMob_Arsenic,Parameter=me_over_m0,Value=1 Material=Silicon,Model=PhuMob_Arsenic,Parameter=mumax_As,Value=1.4170e+03 Material=Silicon,Model=PhuMob_Arsenic,Parameter=mumin_As,Value=52.2 Material=Silicon,Model=PhuMob_Arsenic,Parameter=n_ref_As,Value=9.6800e+16 Material=Silicon,Model=PhuMob_Arsenic,Parameter=nref_D,Value=4.0000e+20 Material=Silicon,Model=PhuMob_Arsenic,Parameter=theta_As,Value=2.285 Material=Silicon,Model=PhuMob_Boron,Parameter=alpha_B,Value=0.719 Material=Silicon,Model=PhuMob_Boron,Parameter=cref_A,Value=0.5 Material=Silicon,Model=PhuMob_Boron,Parameter=f_gf,Value=1 Material=Silicon,Model=PhuMob_Boron,Parameter=f_h,Value=1 Material=Silicon,Model=PhuMob_Boron,Parameter=f_scr,Value=0.0000e+00 Material=Silicon,Model=PhuMob_Boron,Parameter=mh_over_m0,Value=1.258 Material=Silicon,Model=PhuMob_Boron,Parameter=mumax_B,Value=4.7050e+02 Material=Silicon,Model=PhuMob_Boron,Parameter=mumin_B,Value=44.9 Material=Silicon,Model=PhuMob_Boron,Parameter=n_ref_B,Value=2.2300e+17 Material=Silicon,Model=PhuMob_Boron,Parameter=nref_A,Value=7.2000e+20 Material=Silicon,Model=PhuMob_Boron,Parameter=theta_B,Value=2.247 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=alpha1_g_k,Value=-7.2169e-01 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=alpha1_g_m,Value=-1.5952e+00 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=alpha_P,Value=0.711 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=cref_D,Value=0.21 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=f_BH,Value=3.828 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=f_CW,Value=2.459 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=f_e,Value=1 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=f_gf,Value=1 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=f_scr,Value=0.0000e+00 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=me_over_m0,Value=1 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=mumax_P,Value=1.4140e+03 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=mumin_P,Value=68.5 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=n_ref_P,Value=9.2000e+16 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=nref_D,Value=4.0000e+20 Material=Silicon,Model=PhuMob_Phosphorus,Parameter=theta_P,Value=2.285 Material=Silicon,Model=PiezoParam,Parameter=Mkp,Value=1.2 Material=Silicon,Model=PiezoParam,Parameter=S11,Value=0.77 Material=Silicon,Model=PiezoParam,Parameter=S12,Value=-2.1000e-01 Material=Silicon,Model=PiezoParam,Parameter=S13,Value=-2.1000e-01 Material=Silicon,Model=PiezoParam,Parameter=S14,Value=0.0000e+00 Material=Silicon,Model=PiezoParam,Parameter=S15,Value=0.0000e+00 Material=Silicon,Model=PiezoParam,Parameter=S16,Value=0.0000e+00 Material=Silicon,Model=PiezoParam,Parameter=S22,Value=0.77 Material=Silicon,Model=PiezoParam,Parameter=S23,Value=-2.1000e-01 Material=Silicon,Model=PiezoParam,Parameter=S24,Value=0.0000e+00 Material=Silicon,Model=PiezoParam,Parameter=S25,Value=0.0000e+00 Material=Silicon,Model=PiezoParam,Parameter=S26,Value=0.0000e+00 Material=Silicon,Model=PiezoParam,Parameter=S33,Value=0.77 Material=Silicon,Model=PiezoParam,Parameter=S34,Value=0.0000e+00 Material=Silicon,Model=PiezoParam,Parameter=S35,Value=0.0000e+00 Material=Silicon,Model=PiezoParam,Parameter=S36,Value=0.0000e+00 Material=Silicon,Model=PiezoParam,Parameter=S44,Value=1.25 Material=Silicon,Model=PiezoParam,Parameter=S45,Value=0.0000e+00 Material=Silicon,Model=PiezoParam,Parameter=S46,Value=0.0000e+00 Material=Silicon,Model=PiezoParam,Parameter=S55,Value=1.25 Material=Silicon,Model=PiezoParam,Parameter=S56,Value=0.0000e+00 Material=Silicon,Model=PiezoParam,Parameter=S66,Value=1.25 Material=Silicon,Model=PiezoParam,Parameter=adp,Value=2.1 Material=Silicon,Model=PiezoParam,Parameter=bdp,Value=-2.3300e+00 Material=Silicon,Model=PiezoParam,Parameter=dbs,Value=0.53 Material=Silicon,Model=PiezoParam,Parameter=ddp,Value=-4.7500e+00 Material=Silicon,Model=PiezoParam,Parameter=dso,Value=0.044

Material=Silicon,Model=PiezoParam,Parameter=gamma_1,Value=4.27 Material=Silicon,Model=PiezoParam,Parameter=gamma_2,Value=0.315 Material=Silicon,Model=PiezoParam,Parameter=gamma_3,Value=1.4576 Material=Silicon,Model=PiezoParam,Parameter=xid,Value=0.77 Material=Silicon,Model=PiezoParam,Parameter=xis,Value=7 Material=Silicon,Model=PiezoParam,Parameter=xiu,Value=9.16 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=a,Value=3.189 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=a0,Value=3.189 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=c11,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=c12,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=c13,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=c33,Value=1 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d11,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d12,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d13,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d14,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d15,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d16,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d21,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d22,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d23,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d24,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d25,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d26,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d31,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d32,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d33,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d34,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d35,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=d36,Value=0.0000e+00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=psp_x,Value=0.0000e+ 00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=psp_y,Value=0.0000e+ 00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=psp_z,Value=0.0000e+ 00 Material=Silicon,Model=Piezoelectric_Polarization,Parameter=relax,Value=0.1 Material=Silicon,Model=Piezoresistance,Parameter=MaxStressFactor_e,Value=10 Material=Silicon,Model=Piezoresistance,Parameter=MaxStressFactor_h,Value=10 Material=Silicon,Model=Piezoresistance,Parameter=MinStressFactor_e,Value=1.0000e -05 Material=Silicon,Model=Piezoresistance,Parameter=MinStressFactor_h,Value=1.0000e -05 Material=Silicon,Model=Piezoresistance,Parameter=p111_e,Value=6.6000e-19 Material=Silicon,Model=Piezoresistance,Parameter=p111_h,Value=-4.5000e-19 Material=Silicon,Model=Piezoresistance,Parameter=p112_e,Value=-5.5000e-20 Material=Silicon,Model=Piezoresistance,Parameter=p112_h,Value=2.8000e-19 Material=Silicon,Model=Piezoresistance,Parameter=p11_e,Value=-1.1000e-09 Material=Silicon,Model=Piezoresistance,Parameter=p11_h,Value=0.0000e+00 Material=Silicon,Model=Piezoresistance,Parameter=p11con_e,Value=0.0000e+00 Material=Silicon,Model=Piezoresistance,Parameter=p11con_h,Value=5.1000e-11 Material=Silicon,Model=Piezoresistance,Parameter=p11var_e,Value=-1.0260e-09 Material=Silicon,Model=Piezoresistance,Parameter=p11var_h,Value=1.5000e-11 Material=Silicon,Model=Piezoresistance,Parameter=p122_e,Value=-2.2000e-20 Material=Silicon,Model=Piezoresistance,Parameter=p122_h,Value=-2.5000e-19 Material=Silicon,Model=Piezoresistance,Parameter=p123_e,Value=8.8000e-19 Material=Silicon,Model=Piezoresistance,Parameter=p123_h,Value=2.0000e-20 Material=Silicon,Model=Piezoresistance,Parameter=p12_e,Value=4.5000e-10 Material=Silicon,Model=Piezoresistance,Parameter=p12_h,Value=2.0000e-11 Material=Silicon,Model=Piezoresistance,Parameter=p12con_e,Value=0.0000e+00

Material=Silicon,Model=Piezoresistance,Parameter=p12con_h,Value=-2.6000e-11 Material=Silicon,Model=Piezoresistance,Parameter=p12var_e,Value=5.3400e-10 Material=Silicon,Model=Piezoresistance,Parameter=p12var_h,Value=1.5000e-11 Material=Silicon,Model=Piezoresistance,Parameter=p144_e,Value=1.0000e-20 Material=Silicon,Model=Piezoresistance,Parameter=p144_h,Value=-3.3000e-19 Material=Silicon,Model=Piezoresistance,Parameter=p166_e,Value=-6.9000e-19 Material=Silicon,Model=Piezoresistance,Parameter=p166_h,Value=6.6000e-19 Material=Silicon,Model=Piezoresistance,Parameter=p441_e,Value=2.0000e-20 Material=Silicon,Model=Piezoresistance,Parameter=p441_h,Value=0.0000e+00 Material=Silicon,Model=Piezoresistance,Parameter=p44_e,Value=2.5000e-10 Material=Silicon,Model=Piezoresistance,Parameter=p44_h,Value=1.1900e-09 Material=Silicon,Model=Piezoresistance,Parameter=p44con_e,Value=0.0000e+00 Material=Silicon,Model=Piezoresistance,Parameter=p44con_h,Value=2.8000e-10 Material=Silicon,Model=Piezoresistance,Parameter=p44var_e,Value=-1.3600e-10 Material=Silicon,Model=Piezoresistance,Parameter=p44var_h,Value=1.1000e-09 Material=Silicon,Model=Piezoresistance,Parameter=p456_e,Value=2.0000e-20 Material=Silicon,Model=Piezoresistance,Parameter=p456_h,Value=-3.0000e-19 Material=Silicon,Model=Piezoresistance,Parameter=p661_e,Value=6.0000e-21 Material=Silicon,Model=Piezoresistance,Parameter=p661_h,Value=-3.1000e-19 Material=Silicon,Model=PooleFrenkel,Parameter=epsPF_e,Value=11.7 Material=Silicon,Model=PooleFrenkel,Parameter=epsPF_h,Value=11.7 Material=Silicon,Model=PosInterfaceChargeMobility_electron,Parameter=E0,Value=2. 0000e+05 Material=Silicon,Model=PosInterfaceChargeMobility_electron,Parameter=En_exp,Valu e=2 Material=Silicon,Model=PosInterfaceChargeMobility_electron,Parameter=Nc_exp1,Val ue=1 Material=Silicon,Model=PosInterfaceChargeMobility_electron,Parameter=Nc_exp2,Val ue=0.5 Material=Silicon,Model=PosInterfaceChargeMobility_electron,Parameter=T_exp,Value =1 Material=Silicon,Model=PosInterfaceChargeMobility_electron,Parameter=c_exp,Value =1.5 Material=Silicon,Model=PosInterfaceChargeMobility_electron,Parameter=c_trans,Val ue=1.0000e+18 Material=Silicon,Model=PosInterfaceChargeMobility_electron,Parameter=l_crit,Valu e=1.0000e-06 Material=Silicon,Model=PosInterfaceChargeMobility_electron,Parameter=mu1,Value=4 0 Material=Silicon,Model=PosInterfaceChargeMobility_electron_aniso,Parameter=E0,Va lue=2.0000e+05 Material=Silicon,Model=PosInterfaceChargeMobility_electron_aniso,Parameter=En_ex p,Value=2 Material=Silicon,Model=PosInterfaceChargeMobility_electron_aniso,Parameter=Nc_ex p1,Value=1 Material=Silicon,Model=PosInterfaceChargeMobility_electron_aniso,Parameter=Nc_ex p2,Value=0.5 Material=Silicon,Model=PosInterfaceChargeMobility_electron_aniso,Parameter=T_exp ,Value=1 Material=Silicon,Model=PosInterfaceChargeMobility_electron_aniso,Parameter=c_exp ,Value=1.5 Material=Silicon,Model=PosInterfaceChargeMobility_electron_aniso,Parameter=c_tra ns,Value=1.0000e+18 Material=Silicon,Model=PosInterfaceChargeMobility_electron_aniso,Parameter=l_cri t,Value=1.0000e-06 Material=Silicon,Model=PosInterfaceChargeMobility_electron_aniso,Parameter=mu1,V alue=40 Material=Silicon,Model=PosInterfaceChargeMobility_hole,Parameter=E0,Value=2.0000 e+05 Material=Silicon,Model=PosInterfaceChargeMobility_hole,Parameter=En_exp,Value=2

Material=Silicon,Model=PosInterfaceChargeMobility_hole,Parameter=Nc_exp1,Value=1 Material=Silicon,Model=PosInterfaceChargeMobility_hole,Parameter=Nc_exp2,Value=0 .5 Material=Silicon,Model=PosInterfaceChargeMobility_hole,Parameter=T_exp,Value=1 Material=Silicon,Model=PosInterfaceChargeMobility_hole,Parameter=c_exp,Value=1.5 Material=Silicon,Model=PosInterfaceChargeMobility_hole,Parameter=c_trans,Value=1 .0000e+18 Material=Silicon,Model=PosInterfaceChargeMobility_hole,Parameter=l_crit,Value=1. 0000e-06 Material=Silicon,Model=PosInterfaceChargeMobility_hole,Parameter=mu1,Value=40 Material=Silicon,Model=PosInterfaceChargeMobility_hole_aniso,Parameter=E0,Value= 2.0000e+05 Material=Silicon,Model=PosInterfaceChargeMobility_hole_aniso,Parameter=En_exp,Va lue=2 Material=Silicon,Model=PosInterfaceChargeMobility_hole_aniso,Parameter=Nc_exp1,V alue=1 Material=Silicon,Model=PosInterfaceChargeMobility_hole_aniso,Parameter=Nc_exp2,V alue=0.5 Material=Silicon,Model=PosInterfaceChargeMobility_hole_aniso,Parameter=T_exp,Val ue=1 Material=Silicon,Model=PosInterfaceChargeMobility_hole_aniso,Parameter=c_exp,Val ue=1.5 Material=Silicon,Model=PosInterfaceChargeMobility_hole_aniso,Parameter=c_trans,V alue=1.0000e+18 Material=Silicon,Model=PosInterfaceChargeMobility_hole_aniso,Parameter=l_crit,Va lue=1.0000e-06 Material=Silicon,Model=PosInterfaceChargeMobility_hole_aniso,Parameter=mu1,Value =40 Material=Silicon,Model=QWStrain,Parameter=C_11,Value=11.879 Material=Silicon,Model=QWStrain,Parameter=C_12,Value=5.376 Material=Silicon,Model=QWStrain,Parameter=C_13,Value=1 Material=Silicon,Model=QWStrain,Parameter=C_33,Value=3.92 Material=Silicon,Model=QWStrain,Parameter=D1,Value=-8.9000e-01 Material=Silicon,Model=QWStrain,Parameter=D2,Value=4.27 Material=Silicon,Model=QWStrain,Parameter=D3,Value=5.18 Material=Silicon,Model=QWStrain,Parameter=D4,Value=-2.5900e+00 Material=Silicon,Model=QWStrain,Parameter=Tpar,Value=3.0000e+02 Material=Silicon,Model=QWStrain,Parameter=a0,Value=3.1890e-10 Material=Silicon,Model=QWStrain,Parameter=a_c,Value=-4.0800e+00 Material=Silicon,Model=QWStrain,Parameter=a_nu,Value=0.19 Material=Silicon,Model=QWStrain,Parameter=alpha,Value=0.0000e+00 Material=Silicon,Model=QWStrain,Parameter=b_shear,Value=0.9163 Material=Silicon,Model=QWStrain,Parameter=c0,Value=5.1850e-10 Material=Silicon,Model=QWStrain,Parameter=eps,Value=0.0000e+00 Material=Silicon,Model=QuantumPotentialParam_electron,Parameter=eta,Value=1 Material=Silicon,Model=QuantumPotentialParam_electron,Parameter=gamma,Value=3.6 Material=Silicon,Model=QuantumPotentialParam_electron,Parameter=nu,Value=0.0000e +00 Material=Silicon,Model=QuantumPotentialParam_electron,Parameter=theta,Value=0.5 Material=Silicon,Model=QuantumPotentialParam_electron,Parameter=xi,Value=1 Material=Silicon,Model=QuantumPotentialParam_hole,Parameter=eta,Value=1 Material=Silicon,Model=QuantumPotentialParam_hole,Parameter=gamma,Value=5.6 Material=Silicon,Model=QuantumPotentialParam_hole,Parameter=nu,Value=0.0000e+00 Material=Silicon,Model=QuantumPotentialParam_hole,Parameter=theta,Value=0.5 Material=Silicon,Model=QuantumPotentialParam_hole,Parameter=xi,Value=1 Material=Silicon,Model=RSSAbsorption,Parameter=RssA1,Value=3.2310e+02 Material=Silicon,Model=RSSAbsorption,Parameter=RssA2,Value=7.2370e+03 Material=Silicon,Model=RSSAbsorption,Parameter=RssAd,Value=1.0520e+06 Material=Silicon,Model=RSSAbsorption,Parameter=RssBeta,Value=7.0210e-04 Material=Silicon,Model=RSSAbsorption,Parameter=RssC1,Value=5.5

Material=Silicon,Model=RSSAbsorption,Parameter=RssC2,Value=4 Material=Silicon,Model=RSSAbsorption,Parameter=RssEg1,Value=1.1557 Material=Silicon,Model=RSSAbsorption,Parameter=RssEg2,Value=2.5 Material=Silicon,Model=RSSAbsorption,Parameter=RssEgd,Value=3.2 Material=Silicon,Model=RSSAbsorption,Parameter=RssEp1,Value=0.01827 Material=Silicon,Model=RSSAbsorption,Parameter=RssEp2,Value=0.05773 Material=Silicon,Model=RSSAbsorption,Parameter=RssGamma,Value=1.1080e+03 Material=Silicon,Model=Radiation,Parameter=E0,Value=0.1 Material=Silicon,Model=Radiation,Parameter=E1,Value=1.3500e+06 Material=Silicon,Model=Radiation,Parameter=g,Value=7.6000e+12 Material=Silicon,Model=Radiation,Parameter=m,Value=0.9 Material=Silicon,Model=RadiativeRecombination,Parameter=C,Value=0.0000e+00 Material=Silicon,Model=RadiativeRecombination,Parameter=Tpar,Value=3.0000e+02 Material=Silicon,Model=RadiativeRecombination,Parameter=alpha,Value=0.0000e+00 Material=Silicon,Model=RefractiveIndex,Parameter=CarrDepCoeff,Value=1 Material=Silicon,Model=RefractiveIndex,Parameter=N0,Value=1.0000e+18 Material=Silicon,Model=RefractiveIndex,Parameter=Tpar,Value=3.0000e+02 Material=Silicon,Model=RefractiveIndex,Parameter=a0,Value=0.0000e+00 Material=Silicon,Model=RefractiveIndex,Parameter=alpha,Value=2.0000e-04 Material=Silicon,Model=RefractiveIndex,Parameter=refractiveindex,Value=3.45 Material=Silicon,Model=Roulston,Parameter=A_n,Value=1.0200e-08 Material=Silicon,Model=Roulston,Parameter=A_p,Value=4.1500e-07 Material=Silicon,Model=Roulston,Parameter=B_n,Value=1.4500e-12 Material=Silicon,Model=Roulston,Parameter=B_p,Value=1.4800e-12 Material=Silicon,Model=Roulston,Parameter=C_n,Value=1.1100e-08 Material=Silicon,Model=Roulston,Parameter=C_p,Value=4.7900e-07 Material=Silicon,Model=Roulston,Parameter=D_n,Value=3.2300e-12 Material=Silicon,Model=Roulston,Parameter=D_p,Value=1.8100e-12 Material=Silicon,Model=SHEDistribution,Parameter=A_e,Value=1 Material=Silicon,Model=SHEDistribution,Parameter=A_h,Value=1 Material=Silicon,Model=SHEDistribution,Parameter=E_barrier_e,Value=3.1 Material=Silicon,Model=SHEDistribution,Parameter=E_barrier_h,Value=4.73 Material=Silicon,Model=SHEDistribution,Parameter=Lins_e,Value=2.0000e-07 Material=Silicon,Model=SHEDistribution,Parameter=Lins_h,Value=2.0000e-07 Material=Silicon,Model=SHEDistribution,Parameter=alpha_e,Value=0.5 Material=Silicon,Model=SHEDistribution,Parameter=alpha_h,Value=0.669 Material=Silicon,Model=SHEDistribution,Parameter=eps_ins,Value=2.15 Material=Silicon,Model=SHEDistribution,Parameter=epsilon,Value=11.7 Material=Silicon,Model=SHEDistribution,Parameter=g_e,Value=6 Material=Silicon,Model=SHEDistribution,Parameter=g_h,Value=1 Material=Silicon,Model=SHEDistribution,Parameter=hbar_omega_e,Value=0.06 Material=Silicon,Model=SHEDistribution,Parameter=hbar_omega_h,Value=0.0633 Material=Silicon,Model=SHEDistribution,Parameter=ii_energy1_e,Value=1.128 Material=Silicon,Model=SHEDistribution,Parameter=ii_energy1_h,Value=1.128 Material=Silicon,Model=SHEDistribution,Parameter=ii_energy2_e,Value=1.572 Material=Silicon,Model=SHEDistribution,Parameter=ii_energy2_h,Value=1.49 Material=Silicon,Model=SHEDistribution,Parameter=ii_energy3_e,Value=1.75 Material=Silicon,Model=SHEDistribution,Parameter=ii_energy3_h,Value=1.49 Material=Silicon,Model=SHEDistribution,Parameter=ii_exponent1_e,Value=3 Material=Silicon,Model=SHEDistribution,Parameter=ii_exponent1_h,Value=0.0000e+00 Material=Silicon,Model=SHEDistribution,Parameter=ii_exponent2_e,Value=2 Material=Silicon,Model=SHEDistribution,Parameter=ii_exponent2_h,Value=3.4 Material=Silicon,Model=SHEDistribution,Parameter=ii_exponent3_e,Value=0.0000e+00 Material=Silicon,Model=SHEDistribution,Parameter=ii_exponent3_h,Value=0.0000e+00 Material=Silicon,Model=SHEDistribution,Parameter=ii_rate1_e,Value=1.4900e+11 Material=Silicon,Model=SHEDistribution,Parameter=ii_rate1_h,Value=0.0000e+00 Material=Silicon,Model=SHEDistribution,Parameter=ii_rate2_e,Value=1.1300e+12 Material=Silicon,Model=SHEDistribution,Parameter=ii_rate2_h,Value=1.1400e+12 Material=Silicon,Model=SHEDistribution,Parameter=ii_rate3_e,Value=0.0000e+00 Material=Silicon,Model=SHEDistribution,Parameter=ii_rate3_h,Value=0.0000e+00

Material=Silicon,Model=SHEDistribution,Parameter=m_dos_e,Value=0.328 Material=Silicon,Model=SHEDistribution,Parameter=m_dos_h,Value=0.689 Material=Silicon,Model=SHEDistribution,Parameter=m_ins_e,Value=0.5 Material=Silicon,Model=SHEDistribution,Parameter=m_ins_h,Value=0.77 Material=Silicon,Model=SHEDistribution,Parameter=m_s_e,Value=0.26 Material=Silicon,Model=SHEDistribution,Parameter=m_s_h,Value=0.26 Material=Silicon,Model=SHEDistribution,Parameter=mumax_e,Value=1.4300e+03 Material=Silicon,Model=SHEDistribution,Parameter=mumax_h,Value=4.8000e+02 Material=Silicon,Model=SHEDistribution,Parameter=psr_e,Value=0.0000e+00 Material=Silicon,Model=SHEDistribution,Parameter=psr_h,Value=0.0000e+00 Material=Silicon,Model=SHEDistribution,Parameter=rho,Value=2.329 Material=Silicon,Model=SHEDistribution,Parameter=swv0_e,Value=0.0000e+00 Material=Silicon,Model=SHEDistribution,Parameter=swv0_h,Value=0.0000e+00 Material=Silicon,Model=Scharfetter,Parameter=Etrap,Value=0.0000e+00 Material=Silicon,Model=Scharfetter,Parameter=Nref_e,Value=1.0000e+16 Material=Silicon,Model=Scharfetter,Parameter=Nref_h,Value=1.0000e+16 Material=Silicon,Model=Scharfetter,Parameter=Talpha_e,Value=-1.5000e+00 Material=Silicon,Model=Scharfetter,Parameter=Talpha_h,Value=-1.5000e+00 Material=Silicon,Model=Scharfetter,Parameter=Tcoeff_e,Value=2.55 Material=Silicon,Model=Scharfetter,Parameter=Tcoeff_h,Value=2.55 Material=Silicon,Model=Scharfetter,Parameter=gamma_e,Value=1 Material=Silicon,Model=Scharfetter,Parameter=gamma_h,Value=1 Material=Silicon,Model=Scharfetter,Parameter=taumax_e,Value=1.0000e-05 Material=Silicon,Model=Scharfetter,Parameter=taumax_h,Value=3.0000e-06 Material=Silicon,Model=Scharfetter,Parameter=taumin_e,Value=0.0000e+00 Material=Silicon,Model=Scharfetter,Parameter=taumin_h,Value=0.0000e+00 Material=Silicon,Model=SchottkyResistance,Parameter=Rinf_e,Value=2.4000e-09 Material=Silicon,Model=SchottkyResistance,Parameter=Rinf_h,Value=5.2000e-09 Material=Silicon,Model=SchottkyResistance,Parameter=mt_e,Value=0.19 Material=Silicon,Model=SchottkyResistance,Parameter=mt_h,Value=0.16 Material=Silicon,Model=SchottkyResistance,Parameter=phiB_e,Value=0.6 Material=Silicon,Model=SchottkyResistance,Parameter=phiB_h,Value=0.51 Material=Silicon,Model=SchroedingerParameters,Parameter=A,Value=4.22 Material=Silicon,Model=SchroedingerParameters,Parameter=B,Value=0.6084 Material=Silicon,Model=SchroedingerParameters,Parameter=C,Value=23.058 Material=Silicon,Model=SchroedingerParameters,Parameter=eoffset,Value=0.0000e+00 Material=Silicon,Model=SchroedingerParameters,Parameter=hoffset,Value=0.0000e+00 Material=Silicon,Model=SchroedingerParameters,Parameter=me,Value=0.07 Material=Silicon,Model=SchroedingerParameters,Parameter=mh,Value=0.0000e+00 Material=Silicon,Model=SchroedingerParameters,Parameter=ml,Value=0.0000e+00 Material=Silicon,Model=Slotboom,Parameter=Ebgn,Value=6.9200e-03 Material=Silicon,Model=Slotboom,Parameter=Nref,Value=1.3000e+17 Material=Silicon,Model=StressMob,Parameter=Ephonon,Value=0.06 Material=Silicon,Model=StressMob,Parameter=Nref,Value=2.0000e+17 Material=Silicon,Model=StressMob,Parameter=alpha,Value=0.65 Material=Silicon,Model=StressMob,Parameter=beta,Value=1.22 Material=Silicon,Model=StressMob,Parameter=beta_mlda,Value=1.5 Material=Silicon,Model=StressMob,Parameter=bt1,Value=-1.0086e-10 Material=Silicon,Model=StressMob,Parameter=bt2,Value=6.5886e-21 Material=Silicon,Model=StressMob,Parameter=btt,Value=1.2000e-10 Material=Silicon,Model=StressMob,Parameter=d1,Value=-6.0000e-11 Material=Silicon,Model=StressMob,Parameter=dEn001,Value=0.0000e+00 Material=Silicon,Model=StressMob,Parameter=dEn010,Value=0.0000e+00 Material=Silicon,Model=StressMob,Parameter=dEn100,Value=0.0000e+00 Material=Silicon,Model=StressMob,Parameter=dQC001,Value=0.2 Material=Silicon,Model=StressMob,Parameter=dQC010,Value=-1.0000e-01 Material=Silicon,Model=StressMob,Parameter=dQC100,Value=0.2 Material=Silicon,Model=StressMob,Parameter=dQCneg,Value=0.0000e+00 Material=Silicon,Model=StressMob,Parameter=me_l0,Value=0.914 Material=Silicon,Model=StressMob,Parameter=me_lt,Value=4.81

Material=Silicon,Model=StressMob,Parameter=me_t0,Value=0.196 Material=Silicon,Model=StressMob,Parameter=mh_l0,Value=0.48 Material=Silicon,Model=StressMob,Parameter=mh_lh,Value=0.32653 Material=Silicon,Model=StressMob,Parameter=mh_t0,Value=0.15 Material=Silicon,Model=StressMob,Parameter=mobh_l,Value=2.79 Material=Silicon,Model=StressMob,Parameter=ne,Value=2 Material=Silicon,Model=StressMob,Parameter=st001,Value=2.3600e-20 Material=Silicon,Model=StressMob,Parameter=st1,Value=-9.4426e-10 Material=Silicon,Model=StressMob,Parameter=st110,Value=-1.6000e-11 Material=Silicon,Model=StressMob,Parameter=st2,Value=4.3066e-19 Material=Silicon,Model=StressMob,Parameter=st_110,Value=2.9000e-11 Material=Silicon,Model=SurfaceRecombination,Parameter=Etrap,Value=0.0000e+00 Material=Silicon,Model=SurfaceRecombination,Parameter=Nref_e,Value=1.0000e+16 Material=Silicon,Model=SurfaceRecombination,Parameter=S0_e,Value=1.0000e+03 Material=Silicon,Model=SurfaceRecombination,Parameter=S0_h,Value=1.0000e+03 Material=Silicon,Model=SurfaceRecombination,Parameter=Sref_e,Value=1.0000e-03 Material=Silicon,Model=SurfaceRecombination,Parameter=gamma_e,Value=1 Material=Silicon,Model=TEPower,Parameter=s_n,Value=1 Material=Silicon,Model=TEPower,Parameter=s_p,Value=1 Material=Silicon,Model=TEPower,Parameter=scale_n,Value=1 Material=Silicon,Model=TEPower,Parameter=scale_p,Value=1 Material=Silicon,Model=ThermalDiffusion_electron,Parameter=td_gn,Value=1 Material=Silicon,Model=ThermalDiffusion_electron,Parameter=td_n,Value=0.0000e+00 Material=Silicon,Model=ThermalDiffusion_hole,Parameter=td_gp,Value=1 Material=Silicon,Model=ThermalDiffusion_hole,Parameter=td_p,Value=0.0000e+00 Material=Silicon,Model=ThermionicEmission,Parameter=A_e,Value=2 Material=Silicon,Model=ThermionicEmission,Parameter=A_h,Value=2 Material=Silicon,Model=ThermionicEmission,Parameter=B_e,Value=4 Material=Silicon,Model=ThermionicEmission,Parameter=B_h,Value=4 Material=Silicon,Model=ThermionicEmission,Parameter=B_org_e,Value=4 Material=Silicon,Model=ThermionicEmission,Parameter=B_org_h,Value=4 Material=Silicon,Model=ThermionicEmission,Parameter=C_e,Value=1 Material=Silicon,Model=ThermionicEmission,Parameter=C_h,Value=1 Material=Silicon,Model=ThermionicEmission,Parameter=C_org_e,Value=1 Material=Silicon,Model=ThermionicEmission,Parameter=C_org_h,Value=1 Material=Silicon,Model=ThermionicEmission,Parameter=vel_org_e,Value=1.0000e+06 Material=Silicon,Model=ThermionicEmission,Parameter=vel_org_h,Value=1.0000e+06 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=beta,Value=4 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=ftf0,Value=6.2500e+0 3 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=muac01,Value=3.1500e +02 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=muac02,Value=6.4 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=musp0,Value=1.1450e08 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=mutf0,Value=0.15 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=mz1,Value=0.916 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=mz2,Value=0.19 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=p1,Value=0.55 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=p2,Value=4.0000e+02 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=p3,Value=1.44 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=tmin,Value=2.0000e-0 3 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=tsp0,Value=1.0000e-0 4 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=wt01,Value=3.0000e-0 6 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=wt02,Value=3.5000e-0 7 Material=Silicon,Model=ThinLayerMobility_electron,Parameter=zeta,Value=2.88

Material=Silicon,Model=ThinLayerMobility_electron_aniso,Parameter=beta,Value=4 Material=Silicon,Model=ThinLayerMobility_electron_aniso,Parameter=ftf0,Value=6.2 500e+03 Material=Silicon,Model=ThinLayerMobility_electron_aniso,Parameter=muac01,Value=3 .1500e+02 Material=Silicon,Model=ThinLayerMobility_electron_aniso,Parameter=muac02,Value=6 .4 Material=Silicon,Model=ThinLayerMobi