Semi

SEMI CONDUCTOR

1.Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

A.1B.2

C.4D.6

2.Ionization within a P-N junction causes a layer on each side of the barrier called the:

A.junction

B.depletion region

C.barrier voltage

D.forward voltage

3.What is the most significant development in electronics since World War II?

A.the development of color TV

B.the development of the diode

C.the development of the transistor

D.the development of the TRIAC

4.What causes the depletion region?

A.doping

B.diffusion

C.barrier potential

D.ions

5.What is an energy gap?

A.the space between two orbital shells

B.the energy equal to the energy acquired by an electron passing a 1 V electric field

C.the energy band in which electrons can move freely

D.an energy level at which an electron can exist

6.Silicon atoms combine into an orderly pattern called a:

A.covalent bond

B.crystal

C.semiconductor

D.valence orbit

Answer & ExplanationAnswer:OptionBExplanation:No answer description available for this question.Let us discuss.View AnswerWorkspaceReportDiscuss in Forum

7.In "n" type material, majority carriers would be:

A.holesB.dopants

C.slowerD.electrons

Answer & ExplanationAnswer:OptionDExplanation:No answer description available for this question.Let us discuss.View AnswerWorkspaceReportDiscuss in Forum

8.Elements with 1, 2, or 3 valence electrons usually make excellent:

A.conductorsB.semiconductors

C.insulatorsD.neutral

Answer & ExplanationAnswer:OptionAExplanation:No answer description available for this question.Let us discuss.View AnswerWorkspaceReportDiscuss in Forum

9.A commonly used pentavalent material is:

A.arsenicB.boron

C.galliumD.neon


10.Which material may also be considered a semiconductor element?

A.carbonB.ceramic

C.micaD.argon

Answer & ExplanationAnswer:OptionA

11.In "p" type material, minority carriers would be:

A.holesB.dopants

C.slowerD.electrons

Answer & ExplanationAnswer:OptionDExplanation:The purpose of p-type doping is to create an abundance of holes. In the case of silicon, a trivalent atom (typically from Group 13 of the periodic table, such as boron or aluminium) is substituted into the crystal lattice. The result is that one electron is missing from one of the four covalent bonds normal for the silicon lattice. Thus the dopant atom can accept an electron from a neighboring atom's covalent bond to complete the fourth bond. This is why such dopants are called acceptors. The dopant atom accepts an electron, causing the loss of half of one bond from the neighboring atom and resulting in the formation of a "hole". Each hole is associated with a nearby negatively charged dopant ion, and the semiconductor remains electrically neutral as a whole. However, once each hole has wandered away into the lattice, one proton in the atom at the hole's location will be "exposed" and no longer cancelled by an electron. This atom will have 3 electrons and 1 hole surrounding a particular nucleus with 4 protons. For this reason a hole behaves as a positive charge. When a sufficiently large number of acceptor atoms are added, the holes greatly outnumber thermal excited electrons. Thus, holes are the majority carriers, while electrons become minority carriers in p-type materials.View AnswerWorkspaceReportDiscuss in Forum

12.What can a semiconductor sense?

A.magnetism

B.temperature

C.pressure

D.all of the above


13.When an electron jumps from the valence shell to the conduction band, it leaves a gap. What is this gap called?

A.energy gap

B.hole

C.electron-hole pair

D.recombination


14.Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts?

A.0.2B.0.3

C.0.7D.0.8

Answer & ExplanationAnswer:OptionCExplanation:No answer description available for this question.Let us discuss.View AnswerWorkspaceReportDiscuss in Forum

15.Which semiconductor material is made from coal ash?

A.germaniumB.silicon

C.tinD.carbon

Answer & ExplanationAnswer:OptionA

16.When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:

A.1949, William Schockley

B.1955, Walter Bratten

C.1959, Robert Noyce

D.1960, John Bardeen


17.When is a P-N junction formed?

A.in a depletion region

B.in a large reverse biased region

C.the point at which two opposite doped materials come together

D.whenever there is a forward voltage drop


18.A P-N junction mimics a closed switch when it:

A.has a low junction resistance

B.is reverse biased

C.cannot overcome its barrier voltage

D.has a wide depletion region


19.Solid state devices were first manufactured during:

A.World War 2

B.1904

C.1907

D.1960


20.Electron pair bonding occurs when atoms:

A.lack electrons

B.share holes

C.lack holes

D.share electrons

Answer & ExplanationAnswer:OptionD

21.How many valence electrons are in every semiconductor material?

A.1B.2

C.3D.4


22.What is a type of doping material?

A.extrinsic semiconductor material

B.pentavalent material

C.n-type semiconductor

D.majority carriers


23.Minority carriers are many times activated by:

A.heat

B.pressure

C.dopants

D.forward bias


24.What is the voltage across R1 if the P-N junction is made of silicon?

A.12 V

B.11.7 V

C.11.3 V

D.0 V


25.If conductance increases as temperature increases, this is known as a:

A.positive coefficient

B.negative current flow

C.negative coefficient

D.positive resistance

Answer & ExplanationAnswer:OptionCExplanation:A negative temperature coefficient (NTC) occurs when the thermal conductivity of a material rises with increasing temperature, typically in a defined temperature range.

26.Which of the following cannot actually move?

A.majority carriers

B.ions

C.holes

D.free electrons


27.What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?

A.conductivity

B.resistance

C.power

D.all of the above

Answer & ExplanationAnswer:OptionAExplanation:No answer description available for this question

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