Semiconductor R&D advances for improved energy … R&D advances for improved energy efficiency with applications at home and on the road Hans Stork Senior VP and CTO 2 • H. Stork

Semiconductor R&D advances for improved energy

efficiency with applications at home and on the road

Hans Stork

Senior VP and CTO

2 • H. Stork March 2012

• Headquarters: Phoenix, AZ

• Employees: ~20,000 globally

• Revenue: ~$3.4Bn(1)

• Market Capitalization: ~$4.3Bn(2)

• Ticker: ONNN

• Founded: Spun-off from Motorola 1999, IPO 2000

ON Semiconductor Today

(1) Based on 2011 annual revenue.

(2) Based on closing stock price on February 9, 2012

(3) Sector % based on 2011 results


Successful Acquisitions Expand Solutions in Target Markets

20072006

October 10, 2008

May 15, 2006

Oregon Fabrication Facility

June 9, 2010November 4, 2009

December 31, 2007

CPU Voltage and PC

Thermal

Monitoring Business

March 17, 2008

January 27, 2010 January 1, 2011

2008 2009 2010 2011

February 27, 2011

CMOS Image Sensor

Business Unit

http://images.google.com/imgres?imgurl=http://www.arm.com/community/product_images/502.jpg&imgrefurl=http://www.arm.com/community/display_product/rw/ProductId/2155/&usg=__KTJUrHKGQb75aEyDQw1jhzCcVag=&h=813&w=1500&sz=175&hl=en&start=5&itbs=1&tbnid=deVvJIvz65N7oM:&tbnh=81&tbnw=150&prev=/images?q=lsi+logic&hl=en

http://www.cmd.com/


ON Semiconductor products are found in ….

Computer 20%

Communications 20%

Consumer 13%

Automotive 20%

Industrial/Military/

Aerospace/Medical 27%

• Engine control

• Fuel injection

• Lighting

• Power locks/seats

• Smart grid communications

• Industrial automaton &

controls

• Aircraft / satellite

• Hearing aids

• Medical implants • Appliance motor drivers

• TV backlights

• Digital A/V switching &

transmission

• Cell phone battery

charging and protection

• Cell phone ESD

protection and

ElectroMagnetic

Interference Filtering

• Telecom clock generation

• AC-DC power supply

• Power regulation for

microprocessors

• Thermal protection

http://www.toptenreviews.com/scripts/trans_id.php?url=http://www.dpbolvw.net/click-4750817-10549103?url=http://www.dell.com/us/business/p/vostro-320/fs.aspx?c=us&cs=04&l=en&s=bsd&~ck=mn&p_id=52184&param=sid&q_delimit=1


Leadership Position in Focus End-Markets

Industrial ASIC#1

Power Adapters (ACDC)#1

Inverter HIC#2

Protection#1

Op Amp#1

Linear VREG#1

Analog ASIC (Non Auto)#2

Hearing Aid SOC#1

Computing

LED Lighting Smart Grid

Wired & Wireless

Comm.

Industrial /

Medical /

Mil-Aero

AutomotiveConsumerPC Core Power (DCDC)#1

http://www.toptenreviews.com/scripts/trans_id.php?url=http://www.dpbolvw.net/click-4750817-10549103?url=http://www.dell.com/us/business/p/vostro-320/fs.aspx?c=us&cs=04&l=en&s=bsd&~ck=mn&p_id=52184&param=sid&q_delimit=1


Capacity Investment ContinuesWafer Fab Increases ATO Capacity Increases


CMOS/BCD Technology Portfolio

ON

C1

8M

S

I3T

25

, I3

T5

0, I3

T8

0

100 V

80 V

65 V

40 V

20 V

12 V

5 V

3.3 V

2.5 V

1.8 V

1.2 V

Vo

lta

ge

(V

ds

)

1.0 µm 0.7-0.8 µm 0.5-0.6 µm 0.35 µm 0.25 µm 0.18 µm 130 nm 110 nm 90 nm

(Technology Node)

BCD

CMOS

D3

L5

PS

5LV

PS

5A

,B

AC

MO

S2

VH

VIC

3 7

00

V

C5

ONBCD

25

ONC25

I2T

10

0

C8

ON

C11

0

ON

C3

5E

E

G10,C9,C3

Memory

ON

C1

8E

EO

NC

18

D

I4T

Fa

mil

y

Develop


• Thinner packages and smaller footprints with increased I/O density

• Improved thermal efficiency and higher operating temperature packages

• Increased range of die sizes per package (smaller for die shrinks, larger for minimized Rdson)

• Decreased material costs with thinner, larger diameter wafers and copper wire

Portable

Computing

Power Supply

Automotive

Technology

2007 2008 2009 2010

Fine Cu Wire

(0.8 mil)

100μ Ultra Thin

200 mm Wafers

Heavy Cu Wire

(2.0 mil)

50μ Ultra Thin

200 mm Wafers

Automotive

DPAK/D2PAK

Exposed Pad

SOIC

Automotive

S0-8FL

200°C

Packages

Isolated

TO-220

HV DPAK/TO-220/

TO-3P/D2PAKMulti-Chip

Modules

1.0 mm

SO-8FL

Stagger

LF QFN

Electroless

Ni CSP

0.8 mm

M8 Clip RedFet

0.8 mm

SO-8FL

Dual Heatsink

QFN

SOT-1123μQFN

1.0 x 0.6 mm

Flip Chip

Leadframe Cu Stud

μQFN

0.8 x 0.6 mmCo-Pkg/High Density

Stack Die

Innovative Package Technology


Automotive growth driven by higher sales in the US and emerging economies, and higher semi content per vehicle

Computing segment has the largest TAM; Notebooks and emerging markets drive category growth; Ultrabooks launch to counter potential media tablet cannibalization

Migration to variable speed motors for improved energy efficiency in White Goods presents growth opportunity in Consumer

LED lighting and smart meter deployment lead growth in the Industrial segment

Smartphones and Media Tablets drive growth in wireless; Networking / Telecom grow on increased mobile data consumption

2011 – 2014 Market Outlook

Source: TAM – Gartner Dec’11, iSuppli Dec’11, Strategy Analytics Jun’11

Industrial includes mil-aero and medical; Media Tablets are in Communications (Wireless)

TAM Revenue ($M) 2011 2012 2013 2014 CAGR

Automotive 23,709 27,469 30,431 33,260 11.9%

YonY 15.9% 10.8% 9.3%

Computing 117,131 117,258 129,310 127,808 3.0%

YonY 0.1% 10.3% -1.2%

Consumer 51,700 51,379 51,947 53,124 0.9%

YonY -0.6% 1.1% 2.3%

Industrial 29,053 31,169 35,357 41,637 12.7%

YonY 7.3% 13.4% 17.8%

Communications 84,041 90,451 100,101 106,493 8.2%

YonY 7.6% 10.7% 6.4%

0

20,000

40,000

60,000

80,000

100,000

120,000

140,000

2011 2012 2013 2014

Mill

ion

s $

Segment Revenue

Automotive Computing Consumer Industrial Communications

0.0%

2.0%

4.0%

6.0%

8.0%

10.0%

12.0%

14.0%

CAGR

2011 - 2014 TAM CAGR

Automotive Computing Consumer Industrial Communications


Expansion into Emerging Applications

• $3.1B LED lighting driver market

in 2012

• Growth drivers

• LED backlighting in large LCD

panels; LCD-TV and notebooks

• General lighting and illumination

• Automotive lighting

Growth in Lighting and Smart Grid reinforced by synergies with efficient Power Supplies

• 1.3B electric meters worldwide

with only ~10% automated (AMR & AMI)

• SAM expansion:

~$4.2 average content now projected to

grow to $10 in 2012

• ASSP (PLC modems, ZigBee, …)

• Power discretes in distributed power

generation (Wind, Solar)

• EEPROM, SRAM

• Power Line Drivers

LED Lighting Smart Grid


LED Lighting Content

• LED Drivers (120 and 240 Vac,

Medium Voltage AC and DC,

Battery Powered)

• Ambient Light Sensors

• Communication (PLC modems)

• Thermal Management Products

• Power Factor Controllers

• AC-DC and DC-DC Controllers

• Charge Pumps and

Inductive Drivers

• Constant Current Regulators

• Protection and Shunts

• MOSFETs and Rectifiers

Offline High Power Factor Triac Dimmable

LED Driver Intended for ENERGY STAR®

Commercial and Residential LED Luminaires• Active mode efficiency ~83% at 12 W Pout

• Dimmable to less than 2% with standard Triac

Dimmers

• Power Factor > 0.97 typical at full load

• Typical Total Harmonic Distortion < 10%


Smart Grid Segmentation

Applications

Smart Appliances

Applications

Smart HomeDistributed Sources of Energy

(Solar)Smart Meters

Controller / Thermostat

In Home Display

Charging Stations

Junction Boxes

Solar Shingles

Thin Film Panels

PV Panels

Concentrating

Solar Arrays

Inverters

Smart Meters

Communications Modules

for Smart Meters

Applications


DC-DC

LM2576

NCP1410

CAT660

LDO

MC78L05

MC7805

NCP512

Supervisory

MAX809

CAT706

EEPROM

CAT24C02

CAT24C16

CAT24C64

CAT24C256

CAT1023

CAT1027

I/O Expander

CAT9532

CAT9555

ESD/TVS

P6KE6.8

ESD5ZB

P6SMBXX

Logic

74HC00

74HC14

74HC245

74HC4060

AC-DC

NCP1014

NCP1015

NCP105X

PLC

AMIS30585

AMIS49587

Temp Sensor

CAT6095

ADM1023

Line Driver

NCS5650

SRAM

N04L63W2AB

NCN4555

NCN6024

NCN6001

SimCard IF

Clock Product

PureEdge

Zero Delay

Buffer

Smart Meter Content

USB Protect.

NUC2401/02

NTMFS4823

MV. HV FET

Integrated

Passives

Real Time Clock

Supervisory

I/O

Pro

tecti

on

Line DriverVoltage

Protection

Amp

Smart Card Interface

ControllerCurrent Sensor

(Power)

I/O Interface

Current Sensor

(Neutral)

LCDDisplay

I/O Expander

Voltage Sensor

Infrared Receiver

RF Transceiver

Voltage Regulation

(Linear, Switching)

Breaker

RS-485

L1

Neutral

Keypad

Infrared Remote In

RS-232

GPRS/GSM/CDMA

Smart Card

ResetPower Line

Modem

OutputRectification

InputBridge

Rectification

Voltage Regulation(Switching)

Transformer

USB

Ethernet

Euridis

M-Bus

L2

L3

Metrology IC

Memory

1.2 V1.8 V3.3 V5.0 V12 V

Metrology/Register

SoC

Temperature Sensor

Infrared Sensor


Solar Content

Bypass Diodes for Modules

Co-packed IGBT

and HV Rectifier

for Inverter

Trench Ultrafast

for PFC Boost

Diode

HV MOSFET or

IGBT for PFC

Switch


Bipolar / IGBT / MOSFET Application Space

Frequency (Hz)

Po

wer

(VA

)

10 100 1K 10K 100K 1M

100M

10M

1M

100K

10K

1K

100

10

MOSFETDiscrete

IGBT

IGBT

Module

Press

Pack

IGBTGTO

SCR

HVDC Transmission

Robot-Welding Machines

Automobile

Switching

Power Supply

UPS

VCR

Audio Amp.Air Conditioner

MW Class Motor Control


LV-Power MOSFET Applications

Ultrasonic

Medical

appliance

MD

Machine Tool

Power Supply

For Machine

Processing

Actuator

for Industrial

low loss,

high

reliability

1u 10u 100u 1m 10m

Load Inductance L (H)

Op

era

tin

g F

req

uen

cy

f (H

z)

10M

1M

100K

10K

1K

Small Motor

Drive

(HDD, Printer)

improved start-up

performance,

reduced loss, size

low loss

high accuracy

control

Common Needs:

• Energy savings

• Low noise, EMC

• Small & slim package

AC- DC

Switching

Power Supply

(Network OA,

Basestation)

Motor

Drive for

Industrial

(FA inverter) Automotive Electronic

Components

(ABS, injection, solenoid)

high density,

high speed,

processing

high speed,

high accuracy

graphics proc.

high speed

processing

low loss

reduced voltage,

Loss, noise

DC-DC

Converter

(VRM, PC)

Telecom


LV-MOSFET Roadmap

Planar

1990 1995 20052000

Trench Gen 1

Trench Gen 2

Trench Gen 3

Rdsonspec

scaling

Rdson.Qgd

scaling

2010

PlanarPlanar

1990 1995 20052000

Trench Gen 1Trench Gen 1



Rdsonspec

scaling

Rdson.Qgd

scaling

2010


Devices for MHz SMPS Solutions

• Traditional Trench FETs cannot switch fast enough to meet higher frequency VR requirements

• Switching losses are dominant loss factors

• Innovative RF Power technology is used to meet the needs of high frequency VRMs

This solution

Low Side FET

High Side FETDriver IC

Clip Interconnect

6 mm

5 MHz High Efficiency DC-DC Converter Module

6 mm

1/9


MV-MOSFET Ron and Ron*Qgd Scaling

n-e

pi

n-e

pi

n-e

pi

gate

gate

gate

gate

BLN = drain

p-body p-body p-body

Source terminal

Tre

nch

oxi

de

Thin gate oxide

n-e

pi

n-e

pi

n-e

pi

gate

gate

gate

gate

BLN = drain


Source terminal

Tre

nch

oxi

de

Thin gate oxide

Trench

Gate & Field Plate

Planar

1990 1995 20052000 2010

Trench Split Gate

& Field Plate

Trench Gate

Rdson.Qgd

scaling

Rdsonspec

scaling

XtreMOSTM

n-e

pi

n-e

pi

n-e

pi

gate

gate

gate

gate

BLN = drain


Source terminal

Tre

nch

oxi

de

Thin gate oxide

n-e

pi

n-e

pi

n-e

pi

gate

gate

gate

gate

BLN = drain


Source terminal

Tre

nch

oxi

de

Thin gate oxide

Trench

Gate & Field Plate

n-e

pi

n-e

pi

n-e

pi

gate

gate

gate

gate

BLN = drain


Source terminal

Tre

nch

oxi

de

Thin gate oxide

n-e

pi

n-e

pi

n-e

pi

gate

gate

gate

gate

BLN = drain


Source terminal

Tre

nch

oxi

de

Thin gate oxide

Trench

Gate & Field Plate

PlanarPlanar

1990 1995 20052000 2010

Trench Split Gate

& Field Plate

Trench Split Gate

& Field Plate

Trench GateTrench Gate

Rdson.Qgd

scaling

Rdsonspec

scaling

XtreMOSTM

Rd

so

n a

nd

Rd

so

n*Q

gd


HV-Power Transistor Roadmap m

Ω.c

m2

Multi Epi / Implant

SJ VDMOS

1995 2000 20102005

Planar

VDMOS

Trench

SJ VDMOS

• Super-Junction devices achieve substantially

reduced Ron compared to planar MOSFETs

• TO220 : planar MOS : R~400 mΩ ; SJ MOSFET : R ~70 m Ω


Super-Junction HV-Power MOSFET

Gate trench

Oxide plug

Airgap

Gate trench

Oxide plug

Airgap

NlinkPHV PHV

N-ty

pe

SE

G

N-ty

pe

SE

G

N-ty

pe

SE

G

N-ty

pe

SE

G

P-t

yp

e S

EG

P-t

yp

e S

EG

P-t

yp

e S

EG

P-t

yp

e S

EG

Intr

insic

su

pp

ort

ing e

pi

Intr

insic

su

pp

ort

ing e

pi

airg

ap

airg

ap

Oxide

plug

SourceGate trench

Intr

insic

su

pp

ort

ing e

pi

NlinkPHV PHV

N-ty

pe

SE

G

N-ty

pe

SE

G

N-ty

pe

SE

G

N-ty

pe

SE

G

P-t

yp

e S

EG

P-t

yp

e S

EG

P-t

yp

e S

EG

P-t

yp

e S

EG

Intr

insic

su

pp

ort

ing e

pi

Intr

insic

su

pp

ort

ing e

pi

airg

ap

airg

ap

Oxide

plug

SourceGate trench

Intr

insic

su

pp

ort

ing e

pi

1

10

100

100 1000Vbd (V)

Ro

n (

mO

hm

.cm

2)

Trench-SJCoolMOSUltiMOS

15

20

25

30

35

600 650 700 750Vbd (V)

Ro

n (

mO

hm

.cm

2)

Comp4, Trench

Comp1, ME/MI

Comp2, ME/MI

Comp3, ME/MI

This work


IGBT & MOSFET Structures

n- Epi

p ch

n+ Sub

n- Epi

PHV ch

n buffer

p+ Sub

P

N

P

Gate

Collector

Emitter

PNP

Top

Metal

IGBT MOSFET

FieldStop

n+

Source

Drain


IGBT PT & NPT Structures

FZ-subn- Epi

PHV ch

n buffer

p+ Sub

P

N

P

Gate

Collector

Emitter

PNP

Top

Metal

PT IGBT NPT IGBT

FieldStop

Punch Through (PT) is used to

describe p+ sub/buffer/epi structure.

Non-Punch Through (NPT) is non-epi

structure depending on thin wafer process.

p+ Implant


Planar & Trench MOSFET Structure

In the trench structure the channel is formed on the sides of trenches dug

vertically into the silicon.

Current flow is strictly vertical. There is no “pinch” region. This means the

trenches and source openings may be arbitrarily small. Channel density is very

large.

Conduction is still majority carrier, all electrons in this case. Switching is faster.

n- Epi

PHV ch

p+ Sub

P

N

P

n- Epi

PHV ch

n+ Sub

P

N

P

PHV chP PHV chP

Top Metal

n+ Sub

n+

Top Metal

n- Epi

PHV

Back MetalBack Metal


Process Challenges

Back side implantation:- P-type dopant for NPT IGBT

- P-type and N-type for FS IGBT

- Handling of thin wafers

Wafer thinning:- Conventional / TAIKO

- Minimize thickness variation

- Thinning down to 70um (600V) or

40um (400V)

- Subsequent handling of thin wafers

for back side implantation, cleaning,

annealing, metallization, shipping,

probe, die singulation, assembly

- Wafer support systems are

expensive, need substantial

floorspace and the use of adhesives

is limited to low temperatures.

Trench module:- Trench etch: good uniformity

and high etch rate for good

yield and high throughput

- Gate oxide: low defectivity

Back side annealing:-Conventional / laser

- Electrical performance / costs

Back side lithography-Needed for an integrated diode

- Additional handling of thin wafers

Substrate:- FZ-Si or denuded Cz-Si

- Good uniformity of electrical resistivity

- Low oxygen content – no precipitates


Die Thickness Reduction

50µm with Backmetal

1990 2000 20152010

50µm

100µm

250µm

10µm

70µm


◆IMST Substrate Cross Section

◆Assembled Cross Section

Structure of ON-(Sanyo) IPM


Inverter control

Damper control

Energy Saving effect

Air Flow((%)

Power Requirements(%)

Damper (Valve) Control Commercial Power(15kW x 91% x 2,000h) ＋(15kW x 76% x 2,000h)

85% Air flow 60% Air flow

= 50,100kWh

Inverter Control Commercial Power

(15kW x 66% x 2,000h) ＋(15kW x 25% x 2,000h)85% Air flow 60% Air flow

= 27,300kWh

Annual Energy Saving50,100kWh－27,300kWh = 22,800kWh/year

Comparison of energy saving: Damper control vs. Inverter control

Energy-Saving Effect: Power Charges as 16 yen/kWh

22,800kWh x 0.195 $ = 4,451 $/ year

Amortize equipment period of 450,000 yen Inverter

5488 $ / 4,451yen = 1.2 years

Annual CO2 Reduction

CO2 emission coefficient: 0.12kg/kWh*

22,800kWh x 0.12kg/kWh = 2,736kg/year* Source: Global Environment Bureau Ministry of the Environment

Energy Efficiency using Inverter

5


Trends in Power Devices: Si, GaN, and SiC

IGBT

SJ-HVFET

GaN

HEMT


AlGaN/GaN HEMT: Why GaN ?

Noise Figure (NF)- Less Carrier Scattering

- Small RF Loss

Maximum Oscillation

Frequency (fmax)- High Saturation Velocity

- Small Parasitic Capacitance

Maximum Drain

Current (Imax)- High Carrier Density

- High Electron Mobility

Maximum Breakdown

Field (BVDmax)- High Carrier Density

- High Electron Mobility

Maximum Operating

Temperature (Tjmax)- Wide Bandgap

- High Potential Barrier

(A/mm) (dB)

(V/um)

(Deg C)

(GHz)

400

300

200

100

0


• The varieties in power semiconductor Discrete and IC technologies

lead to a broad range in power package technologies

• Key power packaging advancements:

Die thickness reduction, thin wafers below 50µm including back metal

Wafer-level technologies, i.e. thick plated Cu or Au power metal

Advanced bonding technologies, i.e. thick Au, Al, Cu wire bonding, ribbon/clip bonding, power CSP

High power density handling capabilities and efficient heat sinking

High operating temperature up to 200C

Volumetric scaling leading to smaller package footprint and ultra-flat packages

Increased system integration through Power SIP technologies

2D Planar co-integration of a number of die and passive components

3D Vertical stacking technologies of wafer, die and package

Power Package Technologies


Summary Comments

• Semiconductors are key to improve overall efficiency of the Electrical Energy Supply Chain by >25%

• The Power Semiconductor market is very diversified:A broad portfolio of semiconductor materials and devices are available or under development, dependent on power-rating (10 V.A – 10M V.A), frequencies, robustness, cost, …

• Many innovations are hitting the market in Si based MOSFET: SuperJunctions (HV), Vertical Field-plates (MV), Trench-LDMOS (LV), … pushing Si performance to new limits.

• Over the next decade, WBG-materials and devices, such as AlGaN-on-Si HEMT, will be increasingly popular because of superior performance. Cost will have to come down for widespread introduction.

Documents

Semiconductor R&D advances for improved energy … R&D advances for improved energy efficiency with applications at home and on the road Hans Stork Senior VP and CTO 2 • H. Stork