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Semiconductor Today magazine, compound semiconductors ... Today...ers were grown using plasma-assisted molecular beam epitaxy (PAMBE) on sapphire (A1203). NDR was reported at 2.4V

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Page 1: Semiconductor Today magazine, compound semiconductors ... Today...ers were grown using plasma-assisted molecular beam epitaxy (PAMBE) on sapphire (A1203). NDR was reported at 2.4V
Page 2: Semiconductor Today magazine, compound semiconductors ... Today...ers were grown using plasma-assisted molecular beam epitaxy (PAMBE) on sapphire (A1203). NDR was reported at 2.4V
Page 3: Semiconductor Today magazine, compound semiconductors ... Today...ers were grown using plasma-assisted molecular beam epitaxy (PAMBE) on sapphire (A1203). NDR was reported at 2.4V
Page 4: Semiconductor Today magazine, compound semiconductors ... Today...ers were grown using plasma-assisted molecular beam epitaxy (PAMBE) on sapphire (A1203). NDR was reported at 2.4V
Page 5: Semiconductor Today magazine, compound semiconductors ... Today...ers were grown using plasma-assisted molecular beam epitaxy (PAMBE) on sapphire (A1203). NDR was reported at 2.4V

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