Using PowerPoint to Typeset Nice Presentations
Francisco Rogelio Palomo PintoDept. Ingeniera Electrnica,
Escuela Superior de Ingenieros, Universidad de Sevilla, SpainPablo
Fernndez-MartnezCentro Nacional de Microelectrnica (IMB-CNM-
CSIC)
26th RD 50 WorkshopSantander 24th June 2015Sentaurus TCAD
TutorialWith specific focus on Radiation Detector issuesSentaurs
TCAD Tutorial Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad
de SevillaI- Synopsys Sentaurus TCAD as a Finite Element Simulation
SuiteI. Sentaurus TCAD as a FEM Simulation SuiteSentaurs TCAD
Tutorial Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de
SevillaFinite Element Simulation (I)Our Problem: Solution of
Laplace Equation and Continuity equations in regions
PoissonElectron continuityHole continuitywhere (dd)See Fichtner,
Rose, Bank, Semiconductor Device Simulation, IEEE Trans. Electron
Devices 30 (9), pp1018, 1983Different versions of physics models
availableDifferent models of mobility, bandgapGeneration and
recombination rates may include avalanche effects, charge
generation by high-energy particlesPhysics models: Works by
modelling electrostatic potential (Poissons equation) and carrier
continuity (drift-diffusion, dd, mainly)where (dd)I. Sentaurus TCAD
as a FEM Simulation SuiteSentaurs TCAD Tutorial Santander, 24th
June 2015 NIMB-CNM (CSIC)Universidad de SevillaFinite Element
Simulation (II)Equations and solving methodsPoisson and Continuity
Equations to solve the Electrostatic potential carrier
concentrationDifferent Current Models for carrier transport (three
options)1. Drift-diffusion (isothermal)2. Thermodynamics
(temperature gradient)3.Hydrodynamics (other gradients:
temperature, concentration, effective mass)
General Drift-Diffussion3. General Hydrodinamics+Einstein
relations1. Drift Difussion2. Thermodinamics+Lattice
TemperaturegradientI. Sentaurus TCAD as a FEM Simulation
SuiteSentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaFinite Element Simulation (III)Finite
Element Method for Numerical Simulations (or how to solve
Electromagnetic Partial Differential Equations, PDE, in a
computer)1. Discretizing the solution regin into a finite number of
elements2. Deriving governing equations for a typical element (Test
Functions)3. Assembling all elements in the solution regin
(Variationals)4. Solving the system of equations obtained
(Iteration Solver)
Test FunctionTest Functionin terms of finiteelement
vertexvalues
Element Variational(potential energy)Total Energy
PDE Solution in discretized regionis the variational minimum
1234 From Numerical Techniques in Electromagnetics,
M.N.O.Sadiku, 2nd Ed. CRC PressI. Sentaurus TCAD as a FEM
Simulation SuiteSentaurs TCAD Tutorial Santander, 24th June 2015
NIMB-CNM (CSIC)Universidad de SevillaFinite Element Simulation
(IV)Newton-Raphson + Bank-Rose (damping) numerical solver
Ex. Newton-Raphson for f(x)=04. FEM analysis produces a set of
nonlinear equations F(x)=0to be solved by the Newton-Raphson
(Bank-Rose) numerical algorithmGeneral N-R (B-R) algorithmGlobal
approximate Newton methods, R.E.Bank, D.J.Rose, Numerische
Mathematik, 1981, 37(2), pp. 279-295x0= Initial Guess, k=0Repeat
{Compute F(xk),JF(xk)Solve JF(xk)Dxk+1=-F(xk) for
Dxkxk+1=xk+limited(Dxk+1) k=k+1} Until||Dxk+1||, ||F(xk+1)|| small
enoughI. Sentaurus TCAD as a FEM Simulation SuiteSentaurs TCAD
Tutorial Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de
SevillaFinite Element Simulation (V)Basic tools in a Finite Element
simulatorAutomatic Mesher Creator tool(Sentaurus Structure Editor,
SSE)Visualization tool(SVisual)Solver toolSentaurus Device
SSE:A CAD tool togenerate volumes for FEM meshingSVisualI.
Sentaurus TCAD as a FEM Simulation SuiteSentaurs TCAD Tutorial
Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de SevillaII-
Working with Structures:Sentaurus Structure Editor & Sentaurus
VisualII. Working with Structures: S. Structure EditorSentaurs TCAD
Tutorial Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de
SevillaSentaurus Structure Editor:II. Working with Structures: S.
Structure Editor
Tool used for creating the structures (devices) to be
simulatedDefining Device Materials and GeometryDefining and Placing
Doping RegionsDefining and Placing Contacts> sdeCommand
Script:
Can be fully managed with the comprehensive user interface
options and menusOr introducing command code from a .scm file(more
flexible and powerful)Sentaurs TCAD Tutorial Santander, 24th June
2015 NIMB-CNM (CSIC)Universidad de Sevilla
II. Working with Structures: S. Structure EditorWorking with a
.scm file:Diode.scm
The .scm file includes the commands to:Create the structure
(boundary)Define and place the contacts and doping regions Build a
proper discretization mesh for the subsequent FEM simulationExample
of a PiN Diode with Gaussian-Shaped N- and P-type electrodes, and
constant lowly doped p-type substrateSentaurs TCAD Tutorial
Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de SevillaII.
Working with Structures: S. Structure EditorDefining Regions and
Materials:
SILICON
OXIDEEntity Viewer; *** Creation of the substrate bulk (SUB)
***(sdegeo:create-rectangle (position Xmin Ymin 0) (position Xmax
Ymax 0) Silicon SUB);*** Creation of the Oxide layers (OX_L &
OX_R)(sdegeo:create-rectangle (position Xmin Ymin 0) (position
XElectrodeN_Min YOx_max 0) Oxide OX_L)(sdegeo:create-rectangle
(position XElectrodeN_Max Ymin 0) (position Xmax YOx_max 0) Oxide
OX_L)Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaII. Working with Structures: S.
Structure EditorDefining and Placing Contacts:
Electrode P; *** Contact
Declaration***(sdegeo:define-contact-set ElectrodeN 4.0 (color:rgb
1.0 0.0 0.0) ##)(sdegeo:define-contact-set ElectrodeP 4.0
(color:rgb 0.0 0.0 1.0) ##);*** Contact placement (Electrode
N)***(define Xn (+ XElectrodeN_Min (/< DElectrodeN 2)))(define
CN (find-edge-id (position Xn Ymin 0)))
(sdegeo:set-current-contact-set
ElectrodeN(sdegeo:set-contact-edges CN)
Electrode N;*** Contact placement (Electrode P) ***(define Xp (+
Xmin (/ Xmax 2)))(define CP (find-edge-id (position Xp Ymax
0)))
(sdegeo:set-current-contact-set
ElectrodeP(sdegeo:set-contact-edges CP)Identifying the edge segment
where the contact will be placedSentaurs TCAD Tutorial Santander,
24th June 2015 NIMB-CNM (CSIC)Universidad de SevillaII. Working
with Structures: S. Structure EditorDefining and Placing Doping
Regions:; *** Substrate: Constant
Doping***(sdepe:doping-constant-placement Sub_Dop_Placement
BoronActiveConcentration Dop_Sub SUB)Regions with Constant
DopingSingle Command for defining and placingDoping Value; ***
N-Type Electrode: Gaussian profile***(sdedr:define-refeval-window
"DRW_NPlus" "Line" (position XElectrodeN_Min Ymin 0) (position
XElectrodeN_Max Ymin 0))(sdedr:define-gaussian-profile "DGP_NPlus"
"PhosphorusActiveConcentration" "PeakPos" YElectrodeN_Peak
"PeakVal" Dop_Nplus "ValueAtDepth" Dop_Sub "Depth"
YElectrodeN_Junction "Gauss" "Factor"
LatFactor)(sdedr:define-analytical-profile-placement "APP_NPlus"
"DGP_NPlus" "DRW_NPlus" "Positive" "NoReplace"
"Eval")WindowProfilePlacement
Window NplusWindow PplusRegions with Gaussian ProfileBefore the
mesh building, SDE only shows Ref. windowsSentaurs TCAD Tutorial
Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de Sevilla
Ref. GeneralRef. NPlusII. Working with Structures: S. Structure
EditorDefining and Placing a discretization mesh:; *** N-Type
Electrode Refinement***(sdedr:define-refeval-window "RFW_Nplus"
"Rectangle" (position XElectrodeN_Min Ymin 0) (position
XElectrodeN_Max YElectrodeN_Junction
0))(sdedr:define-refinement-size "RFS_Nplus" (/ DElectrodeN 10) (/
tElectrodeN 2) (/ DElectrodeN 2000) (/ tElectrodeN
50))(sdedr:define-refinement-function "RFS_Nplus"
"DopingConcentration" "MaxTransDiff"
0.4)(sdedr:define-refinement-placement "RFP_Nplus" "RFS_Nplus"
"RFW_Nplus")WindowSizePlacementRef. PPlusA function can be defined
to adapt the mesh size to the Doping variationSentaurs TCAD
Tutorial Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de
Sevilla
II. Working with Structures: S. Structure EditorBuilding the
discretization mesh:Recent Versions only include Svisual as the
viewer toolSentaurs TCAD Tutorial Santander, 24th June 2015
NIMB-CNM (CSIC)Universidad de Sevilla
Building the discretization mesh: SDE viewerII. Working with
Structures: S. Structure EditorSeveral files are created while
building the
meshDiode_msh.cmdDiode_msh.logDiode_bnd.tdrDiode_msh.tdrImput File
for the FEM SimulationsSentaurs TCAD Tutorial Santander, 24th June
2015 NIMB-CNM (CSIC)Universidad de SevillaII. Working with
Structures: SVisual
Sentaurus Visual:Preferred tool for visualizing structures and
representing fields and curves
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de Sevilla
II. Working with Structures: SVisualInspecting the created
structure: Visualizing meshIn Recent Versions Build mesh Command
links directly to svisual Sentaurs TCAD Tutorial Santander, 24th
June 2015 NIMB-CNM (CSIC)Universidad de SevillaII. Working with
Structures: SVisualInspecting the created structure: Visualizing
Fields (Doping)
Boron Active ConcentrationPhosphorus Active
ConcentrationSentaurs TCAD Tutorial Santander, 24th June 2015
NIMB-CNM (CSIC)Universidad de SevillaIII- Finite Element Method
Simulations:Sentaurus DeviceIII. FEM Simulations: SDeviceSentaurs
TCAD Tutorial Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad
de Sevilla
Mixed ModeDevice ModeII. FEM Simulations: SDeviceSentaurus
Device:Tool used for FEM Simulations
Files to Solve the ModelPhysics ModelsTypes of Analysis:
Quasistationary, Transient, ACCoupledDevices in the CircuitFile
with Spice elementsElements in the Circuit and their
connectionsSdevice has not a graphical interface. Instructions are
introduced from a command file (.cmd)Sentaurs TCAD Tutorial
Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de SevillaIII.
FEM Simulations: SDeviceDevice Mode Simple Simulation: I-V curve on
a DiodeDiode_IV.cmdElectrode { {Name=ElectrodeN Voltage = 0.0}
{Name=ElectrodeN Voltage = 0.0}}Physics { AreaFactor = 1
Temperature = 300
Mobility
(DopingDependenceeHighFieldSaturationhHighFieldSaturationEnormalCarrierCarrierScattering)
Recombination (SRH (DopingDependence)Auger
(withGeneration)Avalanche (UniBo Eparallel)Band2Band (Hurkx))
EffectiveIntrinsicDensity (OldSlotboom)}Math { #Cylindrical
Method=Pardiso Number_of_threads = 4 Stacksize=200000000
Extrapolate Derivatives AvalDerivatives RelErrControl Iterations=15
Notdamped=60
BreakCriteria { Current (Contact = "ElectrodeN" maxval = 1e-8)
}}File { Grid= Diode_msh.tdr Current= Diode_IV.plt Plot=
Diode_IV.tdr Output= Diode_IV.log}Sentaurs TCAD Tutorial Santander,
24th June 2015 NIMB-CNM (CSIC)Universidad de SevillaIII. FEM
Simulations: SDeviceDevice Mode Simple Simulation: I-V curve on a
Diode (Quasistationary)Diode_IV.cmdPlot { eDensity hDensity
eCurrent/Vector hCurrent/Vector Current/Vector Potential
ElectricField/Vector SpaceCharge eMobility hMobility eVelocity
hVelocity DopingConcentration DonorConcentration
AcceptorConcentration srhRecombination AugerRecombination
AvalancheGeneration eAvalanche hAvalanche TotalRecombination}Solve
{ Coupled (Iterations=50) {Poisson} Coupled (Iterations=15) {Hole
Poisson} Coupled (Iterations=15) {Electron Hole Poisson}
QuasiStationary ( InitialStep = 1e-6 MaxStep = 0.01 MinStep = 1e-9
Goal {Name="ElectrodeN" Voltage=1000} Plot {Range = (0 1)
Intervals=2}) {Coupled {Hole Electron Poisson}Plot (
FilePrefix="IV_" Time=(0.01; 0.05; 0.1; 0.5) NoOverwrite
)}}Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIII. FEM Simulations: SDeviceDevice
Mode Simple Simulation: I-V curve on a Diode
Diode_IV.pltSentaurs TCAD Tutorial Santander, 24th June 2015
NIMB-CNM (CSIC)Universidad de SevillaIII. FEM Simulations:
SDeviceDevice Mode Simple Simulation: I-V curve on a Diode
.tdr FilesSentaurs TCAD Tutorial Santander, 24th June 2015
NIMB-CNM (CSIC)Universidad de SevillaIII. FEM Simulations:
SDeviceDevice Mode Simple Simulation: I-V curve on a Diode
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIII. FEM Simulations: SDeviceDevice
Mode Simple Simulation: I-V curve on a Diode
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIII. FEM Simulations: SDeviceMixed Mode
Simple Simulation: C-V curve on a Diode (AC Coupled)device Diode
{
Electrode { ..}
File { Grid= "Diode_msh.tdr" Current= "Diode_CV_1kHz.plt" Plot=
"Diode_CV_1kHz.tdr"}
Physics { .....}
Plot { .....}
} #End device DiodeSystem { Diode diodesystem
("ElectrodeN"=front "ElectrodeP"=0) Vsource_pset vn (front 0)
{dc=0}}
File { Output ="Diode_CV_1kHz.log" ACExtract =
"Diode_CV_AC_1kHz.plt"}Diode_CV.cmdSentaurs TCAD Tutorial
Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de SevillaIII.
FEM Simulations: SDeviceMixed Mode Simple Simulation: C-V curve on
a Diode (AC Coupled)Solve { Coupled (Iterations=50) {Poisson}
Coupled (Iterations=15) {Hole Poisson} Coupled (Iterations=15)
{Electron Hole Poisson} Coupled (Iterations=15) {Electron Hole
Poisson Contact}
QuasiStationary (InitialStep = 1e-6MaxStep = 1e-2MinStep =
1e-7Increment = 2Decrement = 4Goal {Parameter = vn.dc
Voltage=100}){ACCoupled ( StartFrequency=1e3 EndFrequency=1e3
NumberOfPoints =1 Decade Iterations=15 Node (front)
ACMethod=Blocked ACSubMethod("diodesystem")=ParDiSo){ Poisson
Electron Hole Contact Circuit}}}Diode_CV.cmdSentaurs TCAD Tutorial
Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de SevillaIII.
FEM Simulations: SDevice
Mixed Mode Simple Simulation: C-V curve on a Diode (AC
Coupled)Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIII. FEM Simulations: SDeviceTransient
Simulation: Heavy Ion Impact
Physics { ... HeavyIon (Direction = (0,1)Location = (200, 0)Time
= 1e-9Length = [0 0.001 100 100.001]Wt_hi = [1.0 1.0 1.0 1.0]LET_f
=[0 8.7e-6 8.7e-6 0]GaussianPicoCoulomb)}Solve { . NewCurrentPrefix
= "trans_" Transient (InitialTime = 0FinalTime = 35e-9MinStep =
1e-17MaxStep = 1e-10){Coupled { Poisson Electron Hole Circuit }Plot
(FilePrefix="TransHI_" Time=(0.5e-9; 1e-9; 2e-9; 5e-9; 10e-9)
NoOverwrite)}}Diode_HI.cmdSentaurs TCAD Tutorial Santander, 24th
June 2015 NIMB-CNM (CSIC)Universidad de SevillaIII. FEM
Simulations: SDeviceTransient Simulation: Heavy Ion Impact
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIII. FEM Simulations: SDeviceTransient
Simulation: Heavy Ion Impact
HeavyIonGenerationSentaurs TCAD Tutorial Santander, 24th June
2015 NIMB-CNM (CSIC)Universidad de SevillaIII. FEM Simulations:
SDeviceTransient Simulation: Heavy Ion Impact
HeavyIonChargeDensitySentaurs TCAD Tutorial Santander, 24th June
2015 NIMB-CNM (CSIC)Universidad de SevillaIII. FEM Simulations:
SDeviceTransient Simulation: Heavy Ion Impact
hDensitySentaurs TCAD Tutorial Santander, 24th June 2015
NIMB-CNM (CSIC)Universidad de SevillaIII. FEM Simulations:
SDeviceTransient Simulation: Laser Illumination
Optics ( OpticalGeneration ( ComputeFromMonochromaticSource ()
TimeDependence ( WaveTime = (1e-9 1e-9) WaveTSigma = 50e-12 )
Scaling = 0 ) Excitation ( Wavelength = 0.8 *um Intensity = 0.06
*W/cm2 Window("L1") ( Origin = (200,0) XDirection = (1,0,0) Line
(Dx = 10) )Theta = 0 * Angle from positive y-axis) OpticalSolver (
OptBeam (LayerStackExtraction ( WindowName ="L1" WindowPosition =
Center Mode = ElementWise )) ) ComplexRefractiveIndex
(WavelengthDep (real imag)))Solve { . NewCurrentPrefix = "trans_"
Transient (InitialTime = 0FinalTime = 60e-9MinStep = 1e-17MaxStep =
1e-10){Coupled { Poisson Electron Hole Circuit
}}}Diode_Opt.cmdSentaurs TCAD Tutorial Santander, 24th June 2015
NIMB-CNM (CSIC)Universidad de SevillaIII. FEM Simulations:
SDeviceTransient Simulation: Laser Illumination
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIII. FEM Simulations: SDeviceTransient
Simulation: Laser Illumination
Optical Generation 800 nmSentaurs TCAD Tutorial Santander, 24th
June 2015 NIMB-CNM (CSIC)Universidad de SevillaIII. FEM
Simulations: SDeviceTransient Simulation: Laser IlluminationOptical
Generation 1064 nm
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIII. FEM Simulations: SDeviceTransient
Simulation: Laser IlluminationhDensity 800 nm
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIII. FEM Simulations: SDeviceTransient
Simulation: Laser IlluminationhDensity 1064 nm
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaSystem {Set(ground=0) Vsource_pset
V_bias (cathode ground) {dc=0}Diode diodesystem
("ElectrodeN"=cathode "ElectrodeP"=anode)Inductor_pset L_leak(anode
ground){inductance=1e6}#CSF input capacitanceCapacitor_pset C_in
(anode ground){capacitance=1e-12}#CSF passive feedback network:
Capacitor_pset C_csf (anode out) {capacitance=8e-15}Resistor_pset
R_csf (anode out) {resistance=100e6} #CSA amp internal out
resistenceResistor_pset R_sh(out ground){resistance=1}#CSA external
capacitanceCapacitor_pset C_out (out ground){capacitance=1e-12}Plot
"CircuitCSF" (time() v(anode ground) v(out ground) v(anode out)
i(L_leak anode) i(C_in anode) i(R_sh out) i(C_out out))}III. FEM
Simulations: SDeviceMixed Simulation with a more complicated
circuit# Detector connected to a CSF (charge sensitive filter)
#Vbias between ground and cathode#Detector between cathode and
anode#C_in between anode and ground#CSF Passive network#L_leak
between anode and ground#C_csf and R_csf between anode and
outamp#R_outamp between outamp and ground
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIII. FEM Simulations: SDevice
Mixed Simulation with a more complicated circuitSentaurs TCAD
Tutorial Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de
SevillaIII. FEM Simulations: SDeviceSimulation of the Radiation
EffectsPhysics (material="Silicon") { Traps ( (Acceptor Level
EnergyMid=0.42 fromCondBand Conc=2.3226E15 Randomize=0.29
eXsection=9.5E-15 hXsection=9.5E-14) #Conc=Fluence*1.1613 (Acceptor
Level EnergyMid=0.46 fromCondBand Conc=1.8E15 Randomize=0.23
eXsection=5E-15 hXsection=5E-14 ) #Conc=Fluence*0.9 (Donor Level
EnergyMid=0.36 fromValBand Conc=1.8E15 Randomize=0.31
eXsection=3.23E-13 hXsection=3.23E-14 ) #Conc=Fluence*0.9 ) }
Physics (MaterialInterface="Oxide/Silicon") { # Traps
(FixedCharge Conc=5e10)
Charge(Conc=1.5e11)}Diode_Rad_IV.cmdDiode_Rad_CV.cmdSentaurs TCAD
Tutorial Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de
SevillaIII. FEM Simulations: SDeviceSimulation of the Radiation
Effects : I-V Simulation
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIII. FEM Simulations: SDeviceSimulation
of the Radiation Effects : C-V Simulation
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIV- Additional Tools:Sentaurus
Workbench & Sentaurus ProcessIV. Additional Tools: SWorkbench
& SProcessSentaurs TCAD Tutorial Santander, 24th June 2015
NIMB-CNM (CSIC)Universidad de SevillaSentaurus Workbench (SWB) IV.
Additional Tools: Sentaurus WorkbenchA window-like interface to
manage the different tools and the simulation flowIt creates
simulation trees with variation of parameter in a matrix
organizationEvery instance in SWB is called project. When a project
is saved, a directory is created, containing ASCII files with the
details of the saved project.
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIV. Additional Tools: Sentaurus
WorkbenchSentaurus Workbench (SWB) Essential vocabulary:Tool: one
of the Sentaurus TCAD tools (e.g. sde, sdevice, svisual,
etc)Parameter: a variable (it can be a dimension, a physical
property, a logic flag, etc)Experiment: a row in the simulation
matrix (with a certain value for each parameter)Node: a point in
the simulation matrix. They can be real (if they can be executed)
or virtual (if they cannot be executed)
Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIV. Additional Tools: Sentaurus
WorkbenchSentaurus Workbench (SWB) Command file used to execute the
simulations without SWB, can be used as the input file when a new
tool is added to the SWB project Parameters should be indicated in
the file always between @.....
(define Thickness @Thickness@)
.
(sde:build-mesh snmesh @node@_msh)File { Grid= @tdr@ Current=
@plot@ Plot= @tdrdat@ Output= @log@}
..
Solve { ACCoupled
(StartFrequency=@Frequency@FinalFrequency=@Frequency@..) .}A number
of complete examples are included in SWB
SDE input FileSdevice input FileBuild-mesh command should be
included at the end of the scriptSentaurs TCAD Tutorial Santander,
24th June 2015 NIMB-CNM (CSIC)Universidad de Sevilla
IV. Additional Tools: SProcessSentaurus Process
Tool for emulating the technological steps of a fabrication
processA specific mesh is created to solve the process emulation
equationsIt allows emulating:Deposition of layers of different
materialsLocalized etching of material with a maskIon
implantationDiffusion of the implanted species (thermal steps)Oxide
and epitaxial growthEtc (almost any process you can perform in a
real clean room)Usually, this mesh is not suitable for device
simulationIt is a powerful tool, that can faithfully reproduce the
fabrication processes of a given clean room.Sentaurs TCAD Tutorial
Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de SevillaIV.
Additional Tools: SProcessSentaurus Process: Point of view from a
foundry1st Mode: From device performance to fabrication
processCombined SDE and Sdevice Simulations are performance to
obtain a given characteristicSprocess simulation is performed to
determine the technological steps that can give us the desired
characteristic2nd Mode: From fabrication process to device
performanceA given technological step is simulated with sprocessThe
performance of the whole device is analyzed with the aid of a
SDE+Sdevice simulationGeneral Simulation flow
Complete Process EmulationRe-meshing and adjustmentFEM
SimulationRegular use of Sprocess in a foundry (at least at
IMB-CNM) Sentaurs TCAD Tutorial Santander, 24th June 2015 NIMB-CNM
(CSIC)Universidad de SevillaIV. Additional Tools: SProcess
Thanks for your
[email protected]@imb-cnm.csic.esSentaurs TCAD
Tutorial Santander, 24th June 2015 NIMB-CNM (CSIC)Universidad de
Sevilla
