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Sept 2003 1
Nanoelectronicsand
Nanotechnology
Dr. Clifford LauPresident-elect
IEEE Nanotechnology [email protected]
The presenter is solely responsible for the opinions expressed here.
Sept 2003 2
Scientific research in many disciplines in the earlyto mid 1990s began to approach nanometer scale,although we didn’t call it nanotechnology at the time.
1980 1990 2000
MicroelectronicsPhysicsChemistryMaterialsMolecular biology
Nanotechnology
Historical Perspective
Sept 2003 3
National Nanotechnology Initiative (NNI)
• Afterglow of Sputnik had run its course
• Need to re-energize the next generation S&E
• Interagency working group began planning in 1996
• Support in OSTP
• President Clinton announced NNI in January 2000
• NNI officially began in FY2001
Sept 2003 4
NNI Investment Strategy
• Fundamental nanoscience and engineering research- Nano-Bio systems- Novel materials, processes, and properties- Nanoscale devices and system architectures- Theory, modeling, and simulations
• Grand challenges- Chem-bio detection and protection- Instrumentation and metrology- Nanoelectronics/photonics/magnetics- Health care, therapeutics, diagnostics- Environmental improvement- Energy conversion and storage
• Centers excellence• Research infrastructures• Societal implications and workforce preparation
Sept 2003 5
Research and technology development at the atomic, molecular or macromolecular levels, in the length scale of approximately 1 - 100 nanometer range, to provide a fundamental understanding of phenomena and materials at the nanoscale and to create and use structures, devices and systems that have novel properties and functions because of their small and/or intermediate size. The novel and differentiating properties and functions are developed at a critical length scale of matter typically under 100 nm. Nanotechnology research and development includes manipulation under control of the nanoscale structures and their integration into larger material components, systems and architectures. Within these larger scale assemblies, the control and construction of their structures and components remains at the nanometer scale. In some particular cases, the critical length scale for novel properties and phenomena may be under 1 nm (e.g., manipulation of atoms at ~0.1 nm) or be larger than 100 nm (e.g., nanoparticle reinforced polymers have the unique feature at ~ 200-300 nm as a function of the local bridges or bonds between the nano particles and the polymer).
Nanotechnology Definition(NSET, February 2000)
Sept 2003 6
NNI Participating Agency Programs
NSF Nanocience/engineeering, fundamental knowledge,instrumentation, centers
DoD Information technology, high performance materials,chem-bio-radiological detections
DoC/NIST Measurements and standards, commercializationDoE Energy science, environment, non-proliferationDoJ Diagnostics – crime, contraband detectionsDoT Smart, light weight materials for transportationEPA Environment, green manufacturing of nanomaterialsFDA Food packaging, drug delivery, bio-devicesIntel Comm Detection, prevention of technological surprisesNASA Lighter, smaller adaptive spacecraft, human status
monitors, radiation hardeningNIH Therapeutics, diagnostics, biocompatible materials
miniaturized tools, cellular and molecular sensingNRC Radiological detections, material reliabilityUSDA Biotech for improved crop yields, food packaging
Sept 2003 7
National Nanotechnology Initiative, 2001
FY2000 FY2001 FY2002 FY2003 FY2004(enacted) (request) (request)
• NNI was launched in FY2001, with the goal to double the FY00 baseline of $270M. Since then federal investment in nanotechnology has tripled.
NSF $97M $150M $204M $221M $249MDoD $70M $123M $224M $243M $222MDoE $58M $88M $89M $133M $197MNASA $4M $22M $35M $33M $31MNIH/HHS $32M $40M $59M $65M $70MNIST/DoC $8M $33M $77M $69M $62MEPA $5M $6M $6M $5MDHS(TSA) $2M $2M $2M $2MUSDA $1M $10MDOJ $1M $1M $1M
Total $270M $464M $697.1M $773.7M $849.5M
Sept 2003 8
USA5395
France1317
Germany1949
England906
Italy631
Russia854
Singapore209
Switzerland372
Japan2289
Korea760
Taiwan282
China2474
India461
Australia236
Canada382
Mexico166
Brazil285
Sweden297
Total Worldwide- 18538
Israel273
CY2002 PUBLICATION COUNT(By Keyword Nano*, 2/2003)
Science Citation Index of 5300 Journals
Global Participation in Nanoscience
Sept 2003 9
Center Name Principal Investigator Institution
NSFNational Nanofabrication Users Network (NNUN)
Hu Univ. of California Santa BarbaraTiwari Cornell UniversityHarris Howard UniversityFonash Pennsylvania State UniversityPlummer Stanford University
Computational Nanotechnology Network (NCN)Lundstrom Purdue
DOEIntegrated NanoSystems Michalske Sandia and Los Alamos National LaboratoriesNanostructured Materials Lowndes Oak Ridge National Lab.Molecular Foundry Alivisatos Lawrence Berkeley National LaboratoryFunctional Nanomaterials Hwang Brookhaven LaboratoryNanoscale Materials Bader Argonne
Nanotechnology User Centers and Networks
Murday, NRL #140a 2/03
Sept 2003 10
Name Principal Investigator Institution
NSF
NSEC (Nanoscale Science and Engineering Center)
Nanoscale Systems in Information Technologies Buhrman Cornell University
Nanoscience in Biological and Environmental Engineering Smalley Rice University
Integrated Nanopatterning and Detection Mirkin Northwestern University
Electronic Transport in Molecular Nanostructures Yardley Columbia University
Science of Nanoscale Systems and their Device Applications Westervelt Harvard University
Directed Assembly of Nanostructures Siegel Rensselaer Polytechnic Institute
STC (Science and Technology Center)
Nanobiotechnology, Science and Technology Center Baird Cornell University
MRSEC (Materials Research Science and Engineering Centers)
Nanoscopic Materials Design Groves Univ Virginia
Nanostructured Materials Chien Johns Hopkins University
Semiconductor Physics in Nanostructures Doezema Univ Oklahoma and Arkansas
Nanostructured Materials and Interfaces Eom Univ Wisconsin Madison
Quantum and Spin Phenomena in Nanomagnetic Structures Liou Univ Nebraska Lincoln
Research on the Structure of Matter Bonnell Univ Pennsylvania
DOD
Institute for Soldier Nanotechnologies Thomas Mass. Inst. of Technology
Center for Nanoscience Innovation for Defense Awschalom UC Santa Barbara
Nanoscience Institute Prinz Naval Research Laboratory
NASA
Institute for Cell Mimetic Space Exploration Ho UCLA
Institute for Intelligent Bio-Nanomaterials Junkins Texas A&M
& Structures for Aerospace Vehicles
Bio-Inspection, Design and Processing of Aksay Princeton
Multi-functional Nanocomposites
Institute for Nanoelectronics and Computing Datta Purdue
Centers with Nanotechnology Focus
RICE
NORTHWESTERN
Murday, NRL #140b 1/03
Sept 2003 11
NRL Nanoscience InstituteFacility and Program
• NanoassemblyNanofilaments: Interactions, Manipulation and AssemblyChemical Assembly of Multifunctional ElectronicsDirected Self-Assembly of Biologically-Based NanostructuresTemplate-Directed Molecular ImprintingChemical Templates for Nanocluster Assembly
• Nano-opticsPhotonic Bandgap MaterialsOrg. and Bio. Conjugated Luminescent Quantum DotsOrganic Light Emitting Materials & DevicesNanoscale-Enhanced Processes in a Quantum Dot Structures
• NanochemistryFunctionalized Dendrimeric MaterialsPolymers and Supramolecules for Devices
• NanoelectronicsCoherence, Correlation and Control in NanostructuresNeural-Electronic Interfaces
• NanomechanicsNano-Elastic Dynamics
• Collaborations Developing with universities, NSWC Indian Head, ARL Adelphi,
NAVAIR
Open Fall 2003
Dr. Gary Prinz, NRL Code 1100 http://nanoscience.nrl.navy.mil/
Sept 2003 12
DoD Perspective
• Nanoscience and nanotechnology continue to be one of the top priority research programs within DoD
• Nanotechnology will impact practically all areas of interest to DoD
• Potential for payoff to DoD is great, and is worth the investment
Sept 2003 13
DoD Investment on Nanotechnology
FY2000 FY2001 FY2002 FY2003 FY2004
DoD $70M $123M $180M $243M $222M
OSD $ 28MDARPA $142MArmy $ 29MNavy $ 31MAir Force $ 13M
OSD $ 28MDARPA $117MArmy $ 30MNavy $ 29MAir Force $ 18M
Planned
Note: FY04 budget is estimate only, with highuncertainty in DARPA investment on nano.
Sept 2003 14
* NANOELECTRONICS/NANOPHOTONICS/NANOMAGNETICSNetwork Centric WarfareInformation DominanceUninhabited Combat VehiclesAutomation/Robotics for Reduced ManningEffective training through virtual realityDigital signal processing and LPI communications
* NANOMATERIALS “BY DESIGN”High Performance, Affordable MaterialsMultifunction, Adaptive (Smart) MaterialsNanoengineered Functional MaterialsReduced Maintenance costs
* BIONANOTECHNOLOGY - WARFIGHTER PROTECTIONChemical/Biological Agent detection/destructionHuman Performance/Health Monitor/Prophylaxis
DoD Focused Areas in NNI
Sept 2003 15
DoD Programs in Nanotechnology
• ArmyNanostructured polymers, quantum dots for IR sensing, nanoengineered clusters, nano-composites,Institute for Soldier Nanotechnology (ISN)
• NavyNanoelectronics, nanowires and carbon nanotubes, nanostructured materials, ultrafine and thermalbarrier nanocoatings, nanobio-materials and processes, nanomagnetics and non-volatile memories,IR transparent nanomaterials
• Air ForceNanostructure devices, nanomaterials by design, nano-bio interfaces, polymer nanocomposites,hybrid inorganic/organic nanomaterials, nanosensors for aerospace applications, nano-energeticparticles for explosives and propulsion
• DARPABio-molecular microsystems, metamaterials, molecular electronics, spin electronics, quantuminformation sciences, nanoscale mechanical arrays
• SBIRNanotechnologies, quantum devices, bio-chem decontaminations
• OSDMultidisciplinary University Research Initiative (MURI), DEPSCoR, NDSEG
Sept 2003 16
FY01-06 DURINT Research Program
Investigator Prime Institution Research Topic
Josef Michl Univ. of Colorado Nanoscale Machines and MotorsMehmet Sarikaya Univ. of Washington Molecular Control of Nanoelectronic and Nanomagnetic
StructuresMichael Zachariah Univ. of Minnesota Nano-energetic MaterialsHong-Liang Cui Stevens Inst. of Tech. Characterization of Nanoscale Elements, Devices, SystemsRichard Smalley Rice Univ. Synthesis, Purification, and Functionalization of Carbon
NanotubesRandall Feenstra Carnegie Mellon Univ. Nanoporous Semiconductors – Matrices and SubstratesSubra Suresh MIT Deformation, Fatigue, and Fracture of NanomaterialsHoria Metiu UC Santa Barbara Nanostructure for CatalysisMary C. Boyce MIT Polymeric NanocompositesParas Prasad SUNY at Buffalo Polymeric Nanophotonics and NanoelectronicsTerry Orlando MIT Quantum Computing and Quantum DevicesJames Lukens SUNY, Stony Brook Quantum Computing and Quantum DevicesChad Mirkin Northwestern Univ. Molecular Recognition and Signal TransductionAnupam Madhukar USC Synthesis and Modification of Nanostructure SurfacesGeorge Whitesides Harvard Univ. Magnetic Nanoparticles for Application in Biotechnology
Sept 2003 17
Multidisciplinary University Research Initiative (MURI)
FY Investigator Institution Research Topic
98-03 J. Sturm Princeton Univ. Engineering of Nanostructures and Devices98-03 A. Epstein MIT Microthermal Engines for Compact Powers98-03 B. Zinn Georgia Tech Microthermal Engines for Compact Powers98-03 S. Goodnick Arizona State U. Low-power, High Performance Nanoelectronic Circuits98-03 James Univ. Minnesota Computational Tools for Design of Nanodevices99-04 Brueck U. New Mexico Nanolithograph99-04 Datta Purdue Univ. Spin Semiconductors and Electronics00-05 Mabuchi Caltech Quantum Computing and Quantum Memory00-05 Shapiro MIT Quantum Computing and Quantum Memory01-06 Bruce Dunn UCLA 3-D Nanoarchitectures for Electrochemical Power Source01-06 Ken Poppelmeier Northwestern 3-D Nanoarchitectures for Electrochemical Power Source01-06 Shelton Taylor Univ Virginia Multifunctional Nano-engineered Coatings01-06 Ed Cussler Univ. Minnesota Multifunctional Nano-engineered Coatings02-07 I. Schuller UC San Diego Integrated Nanosensors02-07 D. Lambeth CMU Integrated Nanosensors03-08 Dan van der Weide Wisconsin Nanoprobes for Laboratory Design Instrum. Research03-08 Lukas Novotny U. Rochester Nanoprobes for Laboratory Design Instrum. Research03-08 William Doolittle Georgia Tech Next Generation Epitaxy for Laboratory Instru. Design03-08 Jimmy Xu Brown Univ. Direct Nanoscale Conversion of Biomolecular Signals
Sept 2003 18
Nanoimprint LithographyPrinceton University, Professor Stephen Chou
Imprint mold with 10nmdiameter pillars
10nm diameter holesimprinted in PMMA
10nm diameter metaldots fabricated by nano-imprint lithography
Sept 2003 19
• Biological agent detection– PCR-free bioagent recognition
– DNA/Nanosphere-based• Anthrax detection in solution
– 30 nucleotide region of a 141-mer PCR product (blue dot)
– Sensitivity: <10 femtomole– Detect single BP mismatch
• Anthrax detection on substrate– Agent binds Au cluster
– Ag: 105 amplification
– Amount: grey scale
– Tested• Dugway PG, 2001
– 32 parallel tests in 1.5 hrs!
– Active technology transfer• Nanosphere (spin off company)
• Medical & industrial interest
Colorimetric Detection of Anthraxin Solution
Cluster Engineered MaterialsChad Mirkin, NWU
1)
2)
Denatured BWA genomic DNA
BA = Bacillus AnthracisFT = Francisella Tularensis
BA probe FT probe
FT probe BA probe
1 ng
Au Au
Ag
Ag+
hydroquinoneAg(s)
quinone
Au
Probe 1
Protective Antigen
Probe 2
P robe 1 + PA product
P robe 2 + PA p roduct
P robes 1 & 2 + PA p roduc t
P robes 1 & 2 + LF p roduc t
P robes 1 & 2 + phospha te bu ffe r
P robes 1 & 2 + P C R m ix tu re
Colorimetric Detection of Anthraxon Substrate
Sept 2003 20
RESEARCHERS
• U CO• Northwestern U• NIST: MD and CO (no MURI funds)
MOLECULAR MACHINES DURINTProf. Josef Michl, Univ. of Colorado
COLLABORATIONS AND TRANSITIONS
• Collaboration with NIST, MD: horizontal rotors prepared with and without “paddle” for NIST Microfluidics Pgm
• Collaboration with NIST, CO: molecular rotor prepared for NIST single electron transitor program
• Collaborations with industry: IBM will do electron beam lithography and Zyvex is supplying patterned surfaces
Proposed Laser ProtectionUsing Molecular Machines
RESEARCH GOALS
• Use computation to guide design• Design and build molecular machine
components• Attach the machines to surfaces• Coherently operate the machines• Characterize the nanoscale properties• CHALLENGES: All of the above
ARMY/DOD RELEVANCE
• Laser protection• Power generation• Chem/bio agent detection• Molecular memory, electronics and devices• Microfluidics• Control of flow at surfaces
Sept 2003 21
Nano-Systems Energetics (DURINT)P.I.: Michael Zachariah, U. Minnesota, [email protected]
http://www.me.umn.edu/~mrz/CNER.htm
Research Accomplishments
• Developed continuous flow reactor for nanoparticle production and passivation (copy at ARL-WMRD)• Formulated model for nanoparticle formation and growth• Designed experiments for characterization of size, composition and reactivity of nanoparticles• Computed oxidative reactions of energetic materials (Nitromethane, HMX and FOX-7) on aluminum surfaces
Objective
Develop new methods for and understanding of nano-scale energetic materials
Synthesis, Characterization, Reactivity
Methods for nanoparticle growth and surface passivation. Sol-Gel methods for generation of nanostructuresModeling of particle formation from thermal plasmas. Methods for nanoparticle characterization Thermochemistry of nanoparticles and nanostructures. Nanoparticle oxidation kinetics. Characterize rates of energy release for nanostructures. Measurement of solid-solid exothermic reactions. Computational chemistry/physics of nanostructures.
CNER: Center for Nano-Energetics Research
Research Areas
Nanoscale Energetic Materials
Sept 2003 22
Approach
•prove molecular circuit programming through simulation
•predict properties of new molecules
•synthesize new molecules
•self-assemble in nanocells
•program and package nanocells
April-June 01 Accomplishments:
•Half-adder, inverter and NAND simulated
•25 new molecules synthesized
•Nanocell wafers (e-beam) designed and in fab
•Dry box ready for assembly
•Test bed nanocells (optical) in fab
•60 nm Au particle deposition developed
•Molecule-based circuits designed
•New Molecules proposed for memory
Impact & Transition: Molecular Electronics Corp., Motorola
Technology Issues: Nanocell assembly, programming, and packaging
Nanocell Approach to a Molecular ComputerJ. Tour (PI, Rice U.), D. Allara and P. Weiss (Penn State), P. Franzon (NC State), P. Lincoln
(SRI), M. Reed (Yale), J. Seminario (S. Carolina), R. Tsui, H. Goronkin, I. Amlani (Motorola).
Objectives: Construct logic devices using programmable Nanocells
A
1
2.1V
-.05V
Input A
time (s)0 60.0
930nA
-40nA
Output 1
time (s)0 60.0
W0
W1
R1
R0
RW0
RW1
RD0
RD1
NO2
O2N
NC
Sept 2003 23
Theoretical Analysis, Design, and Simulation of the Nanocell
• Calculated electrical characteristics for two new molecules proposed during the kick-off meeting: the dioxo with three rings (1), and the dinitro with four rings (2).
• First realistic molecular simulation of a fragment of the nanocell (below).
• New candidates for one-year room temperature memory proposed (lower right).
C
CN
N
O
N
O
N
C
NC
N
H
H
S-R
NO2
H2N
S-R
R1
R1
S-R
R = H, AcR1, R2 = H, NO2, NH2
Sept 2003 24
DURINT - Nanoporous SiC and GaNStrain Relief During Epitaxy of GaN on porous SiC
Prof. Randall Feenstra, CMU
Objective: Relieve the strain which occurs when
films are grown on substrates with mismatched lattice constant.
----------------------------------Results: GaN films have been grown by MBE on
porous SiC substrates with a range of surface pore densities. Strain in the films is characterized by stylus profilometry. Significant strain relaxation is found, with the residual strain being about 3 times smaller than for films grown on nonporous substrates.
----------------------------------Interpretation:For MBE growth, pores from the SiC
continue into the GaN. These pores are “stress concentrators”, acting as nucleation sites for half loop dislocation as seen by TEM. These half loops then propagate and relieve the strain in the film.
TEM image of MBE-grown GaN on porous SiC
Strain in GaN film vs. surface pore density
Sept 2003 25
Objectives• To understand and control the materials chemistry and physics of nanotubes and nanotube-based materials;• To develop new nano-composites with enhanced mechanical, thermal and electrical properties;• To fabricate nanotube-based electron field emission devices and evaluate their properties for technological applications;• To investigate energy-storage capability of carbon nanotubes;• To fabricate nanotube NanoElectroMechanical Systems (NEMS).
Carbon Nanotube Based Materials and DevicesUniversity of North Carolina at Chapel Hill
URL: http://www.physics.unc.edu/~zhou/muri
Major Accomplishments
Multidisciplinary Approach
DOD RelevanceNew materials and technology for structural reinforcement, energy storage, electron emission, and nano-device applications.
•Established materials synthesis and processing capability•First observation of rolling at nanometer scale, including manipulation and simulation of NEMS friction•Measured and simulated the electro-mechanical properties of carbon nanotubes•Synthesized nanotube-based polymer composites•Fabricated nanotube field emission devices and demonstrated high current capability (4A/cm2)•Performed the first 13C NMR measurement of the electronic properties of the carbon nanotubes. •Demonstrated high Li storage capacity in processed SWNTs.
Research Highlights
Anode-Cathode Distance (m)
0 40 80 120 160
Vo
ltag
e (
V)
0
400
800
1200
1600
2000
10 mA/cm2
J = 0.5 A/cm2
0.1 A/cm2
Carbon nanotube field emitters provide high current density and stability
Rolling and Friction at the atomic scale
•Materials synthesis, assembly, functionalization; •Nanometer-scale manipulation and measurements of transport, electronic and mechanical properties; •Spectroscopic characterization and studies; •Large-scale ab inito and empirical molecular dynamics simulation and theoretical calculations.
MURI TeamUNC: Physics, Chemistry, Materials Science and Computer ScienceNCSU: Physics and Materials ScienceDuke: Chemistry Industrial Partners: Lucent Technologies, Raychem Co. and Ise Electronics
Sept 2003 26
An Environmentally Compliant, Multi-Functional Coating for Aerospace Using Molecular and Nano-Engineering Methods
University of Virginia, Prof. Shelton Taylor
APPROACH• Multi-coat system built upon thermally
spayed amorphous Al-alloy cladding
• Combinatorial chemistry and nano-encapsulation to identify/deliver non-chromate inhibitors
• Colloidal crystalline arrays, and other molecular probes to provide sensing
DOD TECH PAYOFF• Will provide significant
advancement in corrosion protection, life cycle costs, and mission safety
GOALS/OBJECTIVES• To develop a new multi-functional
coating system for military aircraft• Coating will sense corrosion and
mechanical damage• Initiate mitigation response to
mechanical and chemical damage• Provide corrosion protection and
adhesion using environmentally compliant materials
Nano-crystalline cladding
Non-chromate inhibition
AA2024substrate
Sensing
Sept 2003 27
Program Goal:
Transforming a new type of carbon, single wall nanotubes (SWNTs) into highly organized bulk materials
DoD Impact:
High strength, light weight fibers
Structures with controlled dielectric properties
Potentials in hydrongen storage and electrode technology
Activities Underway:•Understand chemistry & kinetics of the HiPCO process for SWNT synthesis•Development of purification methods for SWNT•Mobilization of SWNTs in solutions and/or suspensions•Mechanical and molecular modeling of sidewall chemistry and tube/polymer interactions•Spinning of composites with nanotube fibers
Synthesis, Purification, and Assembly of SWNT Carbon Fibers
Prof. Richard Smalley, Rice University
Sept 2003 28
Quantum Well IR Sensors
• Advanced Photodetectors– Quantum Well Infrared Photodetectors
• Use electronic band engineering and nanofabrication techniques
• Multispectral IR imaging
– Uncooled Infrared Detectors• Uses nanofabrication and advanced
materials
– Nanoparticle-Enhanced Detection• Increase light detection by 20X
• Target Designation and CCM– IR Lasers for Target Designation
• Need: Compact, 300K IR lasers
• Solution: Quantum cascade lasers
• Impact on Future Army– Smart, multispectral sensors coupled
with ATR for target ID
– Shorter logistics tail
spacer layerd
Light
Silicon waveguideSiO2
Silicon
20
15
10
5
0
En
ha
nce
me
nt
1000900800700600500400
Wavelength (nm)
(c) 108 nm
(b) 66 nm
(a) 40 nm
Mean Particle Diameter
Nanoparticle Enhanced Detection
Quantum Well Infrared Photodetectors
AH-64 Apache Hellfire
Sept 2003 29
Nanometric Energetic MaterialsResearch at AFRL Munitions Directorate
• Scale Differences…– Very High Specific Surface Area
• 4- 6 Orders of Magnitude Increase
– Short Diffusion Path-Length in Burning
• … Can Lead to Important Performance Enhancements
– Complete Burning of Fuel Particles– Accelerated Burn Rates– Ideal Detonation in Fueled Explosives
AlAl
Al2O3
25 nm29,995nm
Surface Area = 0.1m2/g Surface Area = 74 m2/g
2.5 nm
Al2O3
2.5 nm
Al
EnergeticCoating
• Coating Benefits...– Intimate Contact Between Fuel, Energetic
Material– Fewer Problems with Processing, Handling– Material Coating Thickness on Nano-fuel
Particles Is Nano-scale• Fewer Defects, Better Crystals
• Improved Insensitivity Properties
New approach for energetic materials: nano-thick energetic material coating-layer on nanoscale aluminum fuel particles gives improved, intimate mixing in energetic formulations, and very high specific surface area. These effects support very high burn rates.
30 Micron Particle 30 nm Particle30 nm Aluminum Particles Each
Coated with Energetic Material Layer
Sept 2003 30
Institute for Soldier NanotechnologiesProf. Ed Thomas, MIT
Investment Areas• Nanofibres for Lighter Materials• Active/reactive Ballistic Protection (solve energy
dissipation problem)• Environmental Protection• Directed Energy Protection• Micro-Climate Conditioning• Signature Management• Chem/Bio Detection and Protection• Biomonitoring/Triage• Exoskeleton Components• Forward Counter Mine
University Affiliated Research Center• Investment in Soldier Protection• Industry partnership/participation• Accelerate transition of Research Products
Goals• Enhance Objective Force Warrior survivability• Leverage breakthroughs in nanoscience &
nanomanufacturing
Supramolecular Self-Assembly
Mesoscopic Integration
Molecular Scale Control
Nano-Scale Devices
Accomplishments• Ribbons made of electroactive polymers• Artificial muscle and molecular muscle• Organic/inorganic multilayers for optical
Communications• Tunable optical fibers• Dendrimers for protective armors• Conducting polymer for bio-status monitors
Sept 2003 31
The evolution of computer technology over the last few decades has revolutionized computational capability
Faster electronicsLower power consumptionLarger data handling capabilitiesMore complex information processing
The era of Nanoelectronics (<100 nm) is forecast (ITRS) to begin within 3 years (2005)
Why Nanoelectronics?
Shrink volume by 108
Improve power efficiency by 108
ENIAC~1950
Jornada~2000
Stan Williams, HP
Murday, NRL #168 3/02
Sept 2003 32
CMOS Scaling Challenges
Source: Jim Hutchby, SRC
Sept 2003 33
Moore’s Law: Scaling and Microelectronics
Brick WallBarrier
Optical Lithography
EUV,e-beam,x-Ray
Time
Source: Bob Trew, NC State
Sept 2003 34
Microelectronics Nanoelectronics
Evolutionary
Revolutionary
Two Paths
(Including photonics,optics, magnetics, etc.)
Sept 2003 35
On the Evolutionary Path
• Silicon technology will continue down the scaling path for at least another decade if not two.
• In reality, we are already in the regime of nanoelectronics.• New techniques will be invented to overcome some of the
limitations of optical lithography, short channel effects, etc.• New device architecture will be invented to continue the
down-scaling, e.g. vertical devices.
• However, scaling cannot continue forever.
• Still a lot of work on circuit and system architectures to exploit the gazillions of devices on a chip.
• Then there are multichip modules, flip chip, 3-D, etc.• Silicon technology is not going away for a long time.
Sept 2003 36
DARPA HGI Program, PI - K. Saraswat (Stanford U.)
N+/P + poly
Insulating Substrate
GateDrain Source
L
Channel Film
Gate Dielectric
Gate Electrode
N+/P + poly or Silicide
Transistor
9 nm Vertical Field Effect Transistor
Sept 2003 37
Revolutionary Path
• Molecular electronics• Spintronics• Single Electron Transistors• Quantum Cellular Automatons• Nanotube transistors• Carbon nanotube switching devices• Quantum nanodots• Nanophotonics• Nanomagnetics• Entangled photon memories• Others
Sept 2003 38
Carbon Nanotube Transistors
Single nanotube transistor that operates at room temperature. This three-terminal device consists of an individual semiconducting nanotube on two metal nanoelectrodes with the substrate as a gate electrode.
The nanotube is ~5 nm in diameter
Nanotube Field Effect TransistorIBM Research
Fabricated, tested, and functional
Delft University of Technology, Professor Cees Dekker
Sept 2003 39
Figure 1. Suspended nanotube device architecture. (a) Schematic illustrating a periodicsuspended nanotube crossbar array with a device element at each crossing point. The substrateconsists of a conductor (e.g., highly doped silicon, dark-grey) that terminates in a thin dielectriclayer (e.g., SiO2, light grey). The lower nanotubes (dark grey cylinders) are supported directly onthe dielectric film, while the upper nanotubes are suspended by patterned inorganic or organicsupports (dark grey blocks). The device elements at each crossing have two stable states: off andon. The off state (b) corresponds to the case where the nanotubes are separated, while the on state(c) is when the tubes are in vdW contact. A device element is switched between off and on statesby applying voltage pulses that transiently charge the nanotubes to produce attractive or repulsiveforces. After switching, the junction resistance can be read by measuring the current through thejunction at a bias voltage much smaller than the voltage necessary for switching. (b) and (c)correspond to the calculated shapes (see text and Fig. 2) of off and on states for a 20 nm (10,10)SWNT, where the initial separation is 2.0 nm.
Lieber, Harvard U.
Sept 2003 40
On the Revolutionary Path
• Revolutionary nanoelectronic devices (chips) are a long way off.• Devices/chips must be stable, reproducible, and low cost in mass
production.• Devices/chips must have reliable input/output signals and
interconnections.• New circuit and system architectures must be developed to
match the nanoelectronic devices.• Devices/chips must be designable, testable, verifiable, and easy
to package.• Devices/chips must allow for heat dissipation and removal.• First generation revolutionary nanoelectronics, if and when it is
realizable, will be nitch applications, e.g. high density memories.• For random logics, silicon technology will be hard to displace.• Reliability and manufacturability are as important if not more so
as speed and performance.
Sept 2003 41
CNT FED Display; Zhou, UNC
GMR Reading Head; IBM
INFORMATION NANOTECHNOLOGY
Field-effect transistor based on a single Field-effect transistor based on a single 1.6 nm diameter carbon nanotube1.6 nm diameter carbon nanotube
STORAGE
DISPLAY
LOGIC CNT FET; Avouris, IBM
TRANSMISSION
Superlattice VCSEL; Honeywell
AU Nanocluster Vapor Sensor;Snow NRL, MSI/SAWTEK
SENSE
Sept 2003 42
Architecture
Non-classical
CMOS
Memory
Logic
Time
Emerging Technology Sequence
StrainedSi
VerticalTransistor
FinFET Planardouble gate
Phase ChangeNano FG SET Molecular
Magnetic RAM
SETRSFQ QCA Molecular
RTD-FET
Quantumcomputing
CNNDefectTolerant
QCA
3DIntegration
FD SOI
Molecular
EmergingTechnology
Vectors
Hutchby, SRC
Sept 2003 43
Commercial Products
• Tools for characterization (FM, SPM, STM, etc.)• Tools for fabrication (NIL, DPL, etc.)• Carbon nanotubes by the pound• 65nm VLSI chips• Corrosion resistant ceramic nanoparticle coatings• Embedded nanotube polymer matrix materials• Sunscreen with TiO2 nanoparticles• Nanoenergetic particles• NEMS devices• Flat panel displays (soon)
Sept 2003 44
• Nanotechnology is here to stay
• Worldwide investment on nanotechnologyContinues to increase
• Basic research is leading toCommercial products
• Frontier for next industrialrevolution
Summary