si 3865 satasheet

1.8-V Rated

Si3865BDVVishay SiliconixNew Product

Document Number: 72848S-41170—Rev. B, 14-Jun-04

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Load Switch with Level-Shift

PRODUCT SUMMARY

VDS2 (V) rDS(on) (�) ID (A)

0.060 @ VIN = 4.5 V 2.9

1.8 to 8 0.100 @ VIN = 2.5 V 2.2

0.175 @ VIN = 1.8 V 1.7

FEATURES

� 60-m� Low rDS(on) TrenchFET�� 1.8 to 8-V Input� 1.5 to 8-V Logic Level Control

� Low Profile, Small Footprint TSOP-6 Package� 3000-V ESD Protection On Input Switch, VON/OFF� Adjustable Slew-Rate

DESCRIPTION

The Si3865BDV includes a p- and n-channel MOSFET in asingle TSOP-6 package. The low on-resistance p-channelTrenchFET� is tailored for use as a load switch. Then-channel, with an external resistor, can be used as a

level-shift to drive the p-channel load-switch. The n-channelMOSFET has internal ESD protection and can be driven bylogic signals as low as 1.5-V. The Si3865BDV operates onsupply lines from 1.8 to 8-V, and can drive loads up to 2.9 A.

APPLICATION CIRCUITS

Switching VariationR2 @ VIN = 2.5 V, R1 = 20 k�

0

8

16

24

32

40

0 2 4 6 8

R2 (k�)

IL = 1 AVON/OFF = 3 VCi = 10 �FCo = 1 �F

tr td(on)

td(off)tf

(T

ime

�S

)

Note: For R2 switching variations with other VIN/R1combinations See Typical Characteristics

VOUT

GND

LOAD

VIN

ON/OFF

R2

R2

1

2, 3

C16

4

6

5

R1

Q1

Q2

Si3865BDV

Co

Ci

COMPONENTS

R1 Pull-Up Resistor Typical 10 k� to 1 m�*

R2 Optional Slew-Rate Control Typical 0 to 100 k�*

C1 Optional Slew-Rate Control Typical 1000 pF

*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.

The Si3865BDV is ideally suited for high-side load switchingin portable applications. The integrated n-channel level-shiftdevice saves space by reducing external components. Theslew rate is set externally so that rise-times can be tailored todifferent load types.

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FUNCTIONAL BLOCK DIAGRAM

D2

TSOP-6Top View

6

4

1

2

3

5

S2

ON/OFF

R1, C1

D2

D2

R2

S2

ON/OFF

R2

1

4

6

5 Q1

Q2

Si3865BDV

R1, C1

2, 3

Ordering Information: Si3865BDV-T1—E3

ABSOLUTE MAXIMUM RATINGS (TA = 25�C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Input Voltage VIN 8V

ON/OFF Voltage VON/OFF 8V

Load CurrentContinuousa, b

IL�2.9

Load CurrentPulsedb, c

IL�6 A

Continuous Intrinsic Diode Conductiona IS −1

Maximum Power Dissipationa PD 0.83 W

Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 �C

ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 �) ESD 3 kV

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient (continuous current)a RthJA 125 150�C/W

Maximum Junction-to-Foot (Q2) RthJC 40 55�C/W

SPECIFICATIONS (TJ = 25�C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

OFF Characteristics

Reverse Leakage Current IFL VIN = 8 V, VON/OFF = 0 V 1 �A

Diode Forward Voltage VSD IS = −1 A −0.77 −1 V

ON Characteristics

Input Voltage Range VIN 1.8 8 V

VIN = 4.5 V 0.045 0.060

On-Resistance (p-channel) @ 1 A rDS(on)VON/OFF = 1.5 V

ID = 1 AVIN = 2.5 V 0.075 0.100 �(p ) DS(on) ID = 1 AVIN = 1.8 V 0.135 0.175

On State (p channel) Drain Current ID( )

VIN-OUT � 0.2 V, VIN = 5 V, VON/OFF = 1.5 V 1AOn-State (p-channel) Drain-Current ID(on) VIN-OUT � 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1A

Notesa. Surface Mounted on FR4 Board.b. VIN = 8 V, VON/OFF = 8 V, TA = 25�C.c. Pulse test: pulse width �300 �s, duty cycle �2%.



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TYPICAL CHARACTERISTICS (25�C UNLESS NOTED)

0

1

2

3

4

5

6

0 1 2 3 4 5

VGS = 5 thru 2 V

Output Characteristics

VDS − Drain-to-Source Voltage (V)

− D

rain

Cur

rent

(A

)I

D

1.5 V

VDROP vs. IL @ VIN = 4.5 V

0.00

0.08

0.16

0.24

0.32

0.40

0 1 2 3 4 5 6

IL − (A)

(V)

VD

RO

P

VON/OFF = 1.5 to 8 V

TJ = 125�C

TJ = 25�C

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0 1 2 3 4 5 6


IL − (A)

(V)

VD

RO

P

VON/OFF = 1.5 to 8 V

TJ = 125�C

TJ = 25�C


0.0

0.2

0.4

0.6

0.8

1.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

IL − (A)

(V)

VD

RO

PVON/OFF = 1.5 to 8 V

TJ = 125�C

TJ = 25�C

0.0

0.2

0.4

0.6

0.8

1.0

0 1 2 3 4 5 6 7 8

VDROP vs. VIN @ IL = 1 A

VIN (V)

(V)

VD

RO

P

IL = 1 AVON/OFF = 1.5 to 8 V

TJ = 125�C

TJ = 25�C0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

−50 −25 0 25 50 75 100 125 150

Normalized On-Resistancevs. Junction Temperature

TJ − Junction Temperature (�C)


VIN = 5 V

VIN = 1.8 V

r DS

(on)

− O

n-R

esiis

tanc

e(N

orm

aliz

ed)

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0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4



0

100

200

300

400

500

600

0 20 40 60 80 100

0

5

10

15

20

25

0 2 4 6 8 10

R2 (k�)


tr

td(on)

td(off)

tf

(T

ime

�S

)

R2 (k�)


(T

ime

�S

)

td(on)

tr

td(off)

tf

0.0

0.1

0.2

0.3

0.4

0.5

0 1 2 3 4 5 6 7 8

On-Resistance vs. Input Voltage

VIN (V)


TJ = 125�C

TJ = 25�C

r DS

(on)

− O

n-R

esiis

tanc

e (�

)

TJ = 150�C

60

1

0.1

Source-Drain Diode Forward Voltage

VSD − Source-to-Drain Voltage (V)

− S

ourc

e C

urre

nt (

A)

IS

TJ = 25�C

0

5

10

15

20

25

30

35

40

0 2 4 6 8 10



0

10

20

30

40

50

0 1 2 3 4 5 6 7 8

R2 (k�)

(T

ime

tr


tf

td(on)

td(off)

�S

)

R2 (k�)

(T

ime

�S

)


td(on)

tr

tf

td(off)



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0

50

100

150

200

250

300

350

0 20 40 60 80 100

10−3 10−2 1 10 60010−110−4 100

Normalized Thermal Transient Impedance, Junction-to-Ambient2

1

0.1

0.01

Nor

mal

ized

Effe

ctiv

e T

rans

ient

The

rmal

Impe

danc

e

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 150�C/W

3. TJM − TA = PDMZthJA(t)

t1t2

t1t2

Notes:

4. Surface Mounted

PDM

Square Wave Pulse Dureation (sec)

R2 (k�)

(T

ime

�S

)

IL = 1 AVON/OFF = 3 V

tf

td(off)

tr

td(on)

Safe Operating Area, Junction-to-Case

VDS − Drain-to-Source Voltage (V)

10

0.1

0.1 1 10 100

0.01

1

− D

rain

Cur

rent

(A

)I D

Limitedby rDS(on)

TC = 25�CSingle Pulse

10 ms

100 ms

dc

Ci = 10 �FCo = 1 �F

1 s10 s


0

50

100

150

200

250

300

350

400

0 20 40 60 80 100

R2 (k�)

(T

ime

�S

)


tf

td(off)

td(on)

tr

Document Number: 91000 www.vishay.comRevision: 18-Jul-08 1

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All product specifications and data are subject to change without notice.

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si 3865 satasheet