Upload
duongbao
View
232
Download
6
Embed Size (px)
Citation preview
SiC Power Device Introduction and expected Application
Hiroshi Horibe* *KURITA Manufacturing Corporation
(Ujitawara Town Kyoto Japan)
Content
1.Introduction2.Want is SiC like? 3.Si power devices are now on going.4.Diffence between SiC to IGBT5.SiC test in KURITA (my company)6.Summary
Introduction1.SiC power device is expected future semiconductor .
Low switching resistance , superior performance at high frequency, no problem over 200 degree C.
2.These performance will change our society.3.Reducing electric power loss – that’s it.
We have used so many converter and inverter in our life which means motor control equipment.
They say over 50% power consuming is for Motor control which is driven by high frequency inverter.Now Si power device IGBT are used most populary.
4.Not so far but not distance future – replacing the device Si to SiC can save electric power a lot.Only in Japan ,, same power saving as same as 4 electric atomic power plant.
Really ? I doubt it. But,, Listen and find out.
<my weakness and excuse>I am not expertize in this filed(SiC itself). But I am electronics engineer. I will try to introduce “SiC” power device that means expected future generation semiconductor”.
SiC ManufacturerSiC is very attractive power device.So many company now have started developing this field.I am not sure exactly but I pick up several companies.
<U.S>Cree 2-6(two six) Dow Cornig <Japan>Rohm Mitsubishi Fuji Toshiba Hoya New Japan steel <Germany>SiC crystal<China>TankeBlue Semiconductor
<note>In my presentation I mainly pick up pictures and graph from “Rohm” catalog.
What is SiC Power Device like?
Looks like similar to other Power Devices ---IGBT or MOSFETBut There are big difference.
Si IGBT1200V 200A
SiC 1200V 120A
Si MOSFET1500V 8A
SiC1200V 35A
Future of SiC : Compared with Si power device
1,Wide band gap 2,Delectric withstand voltage is high 3,Heat conductivity is high
1,Low ON resistance ------reduce power loss2,No problem at over 200 degree C ------ Cooling system can be made smaller3,High frequency running is available ------ Additional components can be smaller
Inverter PowerLoss
Expected Performance
Si IGBT SiC Power Device
Under 0.5
Power loss reduce drastically?
I talk detail about it in later slide.
Switching power loss comparison
Power device is now on going these fieldSi IGBT have being used now.
Power Plant Train Car
FactorySolar Panel
Air conditionerIce Box Washing machine
PCServer
Reducing Power Loss InverterSmaller and Lighter
Inverter Lighter Cooling system smaller
Less Power loss and smaller
Power ConditionerHigh efficiency
High efficiency Save the power
AC adapter become smaller It can be set inside the PC
So much power and heatLess loss and Save the power
To save the power or increasing the performance these devices have to be improved As written in red sentences.
So many inverter and converter in our life.All are now Silicon power device so far.Car solar panel train washing machine ICE box Air conditioner elevator light factory production line you name it
Factory Production Line
InverterConverter
Battery
MOSFETIGBT
DIODE
MotorMotor
Car Train
Solar Panel
Power ConditionerDC to AC sine wave
Chopper Inverter
Sine waveTo House use
Control is very smooth by changing frequency or pulse width. Imagine “the lift” speed upor down – our feeling without any notice. That ‘s why power devices for.
But we can not ignore there are still much power loss and hear when it switches.
Semiconductor switch is not ideal one. It produces so much heat loss when it switches.
Mechanical switch ; push button switch , breaker , relay , conductor
Almost 0 ohm
No loss no heat upCan’t operate at high frequency. 1 time / sec
ON voltage about 2 to 3V
Turn on lossV*I*1/6*pulse width*f
Turn off lossV*I*1/6*pulse width *f
Recovering current lossAt 100A switching 8mJ/pulse -- IGBT0.1mJ/pulse -- SiC
Device ON period (30kH 100kHz or so)
IGBT MOSFET SiC also Diode
Semiconductor power device
Every pulse switch power loss , energy loss are occured .5-10% power loss at Si IGBT inverter.
Voltage fall down Current rise up when it switches
ON
OFF
Conversion is needed at middle position between source to load.Converter , Inverter , Chopper and so on. =Real world so far.
Power Plant
ConversionConversion
Cnversion
Conversion
Coversion
V Changing plantTransformer
Home
Several hundreds Volt
Motor
InverterEV/HEV
Wind
Solar
DC
DC to AC AC to DC to AC
(Converter and Inverter)
Home
Air Conditioner ICE box Washing machine
Inverter
What is Conversion?
Change the voltage up or down
Change AC wave frequencyChange AC to DC orDC to AC
Can’t avoid any loss when it converts
Change to heat loss*waste of Energy*Heat spreading panel is needed*Can’ t make equipment smaller
Using SiC power device instead of Si Device , we expect reducing power drastically
Power Loss Difference between SiC to IGBTTry calculation under one condition.
Suppose one 200V 100A 3phase motor driving
200V 100A
Power device like this
Switching frequency 100kHz
At 50kHz sine wave 2000 pulses / 1 cycle
ON partPulse rise partPulse fall part
Reverse recovering part
Converter Inverter
3phaseAC power
6 devices inverter section
Difference between SiC to IGBTTurn ON lossTurn OFF lossRecovering loss
Watch out big switching time difference between SiC to IGBT.
One example of CalculationF: 100kHz Current : 100A Switching duty 0.5
Motor Power √3*200V* 100A*cosθ(0.7)=24kW
IGBT CM100DY-24NFSiC BSM1200D12P2COOS
On R loss Off F loss Recoverloss ONloss
(4.7mJ+10mJ+8mJ)*100kHz=2.2kW + 0.2kW =2.4kW--- IGBT
(2.7mJ+1.7mJ+0.1mJ)*100kHz=0.45kW + 0.35kW =0.8kW ---- SiC
1,This example is rough one. But you can see SiC switching loss is much smaller than Si IGBT. (10% is power loss : IGBT )So you see we normally can’t use IGBT at that high frequency. Normally under 30kHz.
2,High frequency using ,components related with frequency “size” and “weight”become small and light . Capacitor , inductor, transformer .
3,We also need bigger heat think when we use IGBT at normal frequency.We always say “Using power device is the same as struggling against heat which is produced from it”
Thank you to SiC much less heat loss than Si power device IGBT.
SiC Expecting performance
Practical Circuit to Motor ControlCar Train washing machine you name it
SiC Device SiC diode
DevicePower Loss
SiIGBT
Si IGBT+
SiC diode
SiC device+
SiC diode
Under 0.5
Size and Weight
4kW InverterSi device
(0.1w/cm2)
3kW InverterSiC device
(7w/cm2)
5.5kW InverterSi device(0.4w/cm2)
Power Loss decrease
Under Half size or 1/3 size must be expected.
Billion US $
To HEV SiC
The other
SiC to industry production line
SiC to UPS
SBD to Improving P.F
SBD to HEV
SBD to industry production line
SBD to UPS
It looks like so many different object .SiC will be used in near future.
Future quantities expecting data
Inverter Block diagram : our pulse modulator
Now it consist of IGBT.But We have tested SiCAs watching gate wave form.
SiC IGBT
fast slowfast slowCatalog specificationOf D-S performance
SiC IGBT
GateRise time
GateFall time
35ns 256ns
40ns 250ns
D-S performance
D-S performance
Gate rise time and fall time
SiC is faster (including delay time) than IGBT which make less switching power loss.
Transformer wish to become smaller
Heat think for device cooling
Inverter (IGBT)On heat think
Inverter
After replacing power device ------*We hope we can run high frequency running up
to 100kHz.*That makes size of this modulator smaller and
light.half size and now 19kg to under 10kg.
*We can do it in one or two years.
Summary1.Low resistance , superior performance at high frequency and high temperature SiC power device is expected reducing the power loss that means much saving electric power.
2. There is one bad news so far.SiC device is very expensive so far. 2 years ago ten times more expensive than same Si specification device. But these day becomes lower price. But still high price.
3.If it became 1.5 times more expensive that Si device ,,, SiC must be used spreadwidely. But not yet. May be several years later. So that means still Si IGBT have being dominant .4. Again I say same as first talking.
In Japan over half of electric power was consumed in Motor control system. Increasing efficiency this field (Inverter Converter ) by using SiC device
‐‐‐ Only in Japanese case 4 atomic power plant energy might be saved ,, believe or not.
Thank you for attention!