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SIM-20ST Sensors Rev.A 1/2 Infrared light emitting diode, side-view type SIM-012SB The SIM-20ST is a GaAs infrared light emitting diode with a side-facing detector. High output with φ1.85 lens.  Applications Light source for sensors Features 1) Compact package (4.4x4.3 mm) with lens. 2) High efficiency, high output PO = 7mW (IF = 50 mA). 3) Emission spectrum well suited to silicon detectors (λP = 950 nm). 4) Good current-optical output linearity. 5) Long life, high reliability. Dimensions (Unit : mm)    1    4    M    i   n  . (2.54) 2.0 0.5 0.45    1  .    5        ±    0  .    1    0  .    5    M   a   x  .    4  .    4        ±    0  .    1    0  .    5    M   a   x  .    1  .    5 4.3±0.1 3.9±0.1            3   .            2        ±            0   .            1    G   a    t   e   r   e   m   a    i   n    d   e   r Resin coating Notes: 1. Tolerances are ±0.2 unless otherwise indicated. 2. Value in parenthese is size at base of leads. 1 Cathode 2 Anode 0.4    2               ±    1        0.4 0.53    4               ±    1          Absolute ma ximum ra tings (Ta=25° C)  Electrical and optical characteristics (Ta=25° C) Parameter Symbol IE VF IR λ P ∆λ θ1/2 tr tf Min. Typ. 7.5 1.3 950 40 15 1.0 Max. 1.6 10 Unit IF 50mA IF 50mA VR 3V IF 50mA IF 50mA IF 50mA IF 50mA mW/sr V µA nm nm deg µs fc  1.0  IF 50mA MHz Conditions Emitting strength Forward voltage Reverse current Peak light emitting wavelength Spectral line half width Half-viewing angle Response time Cut-off frequency  Parameter Symbol PD IF IFP VR Topr Tstg Limits 25 to +85 30 to +100 50 5 80 0.5 Unit mA V mW A °C °C Pulse width = 0.1 ms, duty ratio 1% Forward current Reverse voltage Power dissipation Pulse forward current Operating temperature Storage temperature

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SIM-20STSensors 

Rev.A 1/2

Infrared light emitting diode, side-view type

SIM-012SB

The SIM-20ST is a GaAs infrared light emitting diode with a side-facing detector. High output with φ1.85 lens.

 Applications

Light source for sensors

Features1) Compact package (4.4x4.3 mm) with lens.

2) High efficiency, high output PO = 7mW (IF = 50 mA).

3) Emission spectrum well suited to silicon detectors

(λP = 950 nm).

4) Good current-optical output linearity.

5) Long life, high reliability.

Dimensions (Unit : mm) 

   1   4   M   i  n .

(2.54)

2.0

0.5

0.45

   1 .   5

       ±   0 .   1

   0 .   5

   M  a  x .

   4 .   4

       ±   0 .   1

   0 .   5

   M  a  x .   1

 .   5

4.3±0.1

3.9±0.1

           3  .

           2       ±           0  .

           1

   G  a   t  e  r  e  m  a   i  n   d  e  r

Resin coating

Notes:1. Tolerances are ±0.2 unless

otherwise indicated.2. Value in parenthese is size

at base of leads.

1 Cathode 2Anode

0.4

   2       °       ±   1       °

0.4

0.53

   4       °       ±   1       °

 

 Absolute maximum ratings (Ta=25°C) 

Electrical and optical characteristics (Ta=25°C)

Parameter Symbol

IE

VF

IR

λ P

∆λ 

θ1/2

tr tf

Min.

Typ.

7.5

1.3

950

40

15

1.0

Max.

1.6

10

Unit

IF 50mA

IF 50mA

VR 3V

IF 50mA

IF 50mA

IF 50mA

IF 50mA

mW/sr

V

µA

nm

nm

deg

µs

fc   − 1.0   − IF 50mAMHz

Conditions

Emitting strength

Forward voltage

Reverse current

Peak light emitting wavelength

Spectral line half width

Half-viewing angle

Response time

Cut-off frequency 

Parameter Symbol

PD

IF

IFP∗

VR

Topr

Tstg

Limits

−25 to +85

−30 to +100

50

5

80

0.5

Unit

mA

V

mW

A

°C

°C

∗ Pulse width = 0.1 ms, duty ratio 1%

Forward current

Reverse voltage

Power dissipation

Pulse forward current

Operating temperature

Storage temperature

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SIM-20STSensors 

Rev.A 2/2

Electrical and optical characteristic curves

   F   O   R   W   A   R   D

   C   U   R   R   E   N   T  :   I   F   (  m   A

   )

AMBIENT TEMPERATURE : Ta (°C)

−20 0 40 60 8020 1000

20

10

30

40

50

Fig.1 Forward current falloff

 

0 1 20

20

40

10

30

50

FORWARD VOLTAGE : VF (V)

   F   O   R   W   A   R   D

   C   U   R   R   E   N   T  :   I   F   (  m   A   )

Fig.2 Forward current vs. forward voltage

75°C

50°C

25°C

0°C

−25°C

 

   E   M   I   T   T   I   N   G

   S   T   R   E   N   G   T   H

   I  :   I   E

   (  m   W    /   S  r   )

FORWARD CURRENT : IF(mA)

0 10 20 30 40 500

10

2

4

6

8

Fig.3 Emitting strength vs.forward current

 

   R   E   L   A   T   I   V   E

   E   M   I   T   T   I   N   G

   I  :   I   E   (   %   )

AMBIENT TEMPERATURE : Ta (°C)

0−25 25 10050 75

10

20

50

100

200

Fig. 4 Relative emitting strength vs.ambient temperature

 

   R   E   L   A   T   I   V   E

   O   P   T   I   C   A   L   O   U   T   P   U   T  :   P   O

   (   %   )

OPTICAL WAVELENGTH : λ (nm)900 920 940 960 980 1000

0

20

40

60

80

100

Fig.5 Wavelength

 

0

20

0

40

60

80

100

10° 20°80 60 40 20100 30° 40° 50° 60° 70° 80° 90°

10° 0°20°

30°

40°

50°

60°

70°

80°

90°

   R   E   L   A   T   I   V   E

   E   M   I   T   T

   I   N   G

   S   T   R   E   N   G   T   H   (   %   )

RELATIVE EMITTING STRENGTH (%) ANGULAR DISPLACEMENT : θ (deg)

Fig. 6 Directional pattern

 

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  Appendix 

 Appendix1-Rev1.1

 

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, off ice-automation equipment, communications devices, electrical appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

 transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

NotesNo technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.